Reliability analysis computes the reliability for MOSFETs and the circuit. The three reliability modules are:
- MOSFET Hot-Carrier Injection (HCI) module:
Predicts transistor and circuit performance degradation due to HCI effects
- PMOSFET Negative Bias Temperature Instability (NBTI) module:
Predicts PMOSFET and circuit performance degradation due to NBTI and NBTI recovery effects
- NMOSFET Positive Bias Temperature Instability (PBTI) module:
Predicts NMOSFET and circuit performance degradation due to PBTI effects
You can specify the reliability analysis statement in your analog simulation control file as follows:
name reliability {
<reliability control statements> ...
<stress simulation statements> ...
<aging testbench statements> ...
<aging/post-stress simulation statements> ...
}
You can specify all analyses supported by AMS in the reliability analysis block. Transient analysis is the only valid analysis type for stress simulation.
The AMS reliability analysis supports SST2 and SST2+PSFXL waveform formats. However there is some limitation to using the analyses types with the waveform format. The following table shows the analysis that you can use in the reliability block based on the waveform format specified:
|
Analysis Name |
SST2 |
SST2+PSFXL |
|---|---|---|
|
|
Yes |
Yes |
|
|
Yes |
No |
|
|
Yes |
No |
|
|
Yes |
Yes |
dc |
Yes | No |
As shown in the above table, when SST2 format is used, the tran, info, ac, alter, and dc analyses can be specified in reliability block. However, when SST2+PSFXL format is used, only tran and alter analyses can be specified in the reliability block.