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Active Components

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All components listed in the Actives category require a defined model card. Each element maps to a specific Spectre primitive with respect to its instance parameters.

Symbol: ibis_buffer

IBIS buffer

The IBIS buffer model is based on the IBIS (I/O Buffer Information Specification) standard, version 3.2. The package and board models are not included in the buffer, they have to be added as separate subcircuits.

The ibis_buffer component is a p-cell that can have different pin combinations based on the selected buffer type. The supported buffer types are:

• input
• output
• io
• tristate
• opendrain and opensink
• ioopendrain and ioopensink
• opensource
• ioopensource
• terminator
• inputecl
• outputecl
• ioecl
• tristateecl

The following table lists the different pin combinations based on the buffer type. The presence of a pin is denoted by Y, absence of a pin is denoted by N, and optional pin is denoted by O.

Buffer Type	die/pad pin	input	output	enable	ground	power	ground clamp	power clamp	inverted die/pad pin
input	Y	Y	N	N	N	N	O	O	O
output	Y	N	Y	N	O	O	O	O	N
io	Y	Y	Y	Y	O	O	O	O	O
tristate	Y	N	Y	Y	O	O	O	O	N
opendrain opensink	Y	N	Y	N	O	N	O	N	N
ioopendrain ioopensink	Y	Y	Y	Y	O	N	O	N	O
opensource	Y	N	Y	N	N	O	N	O	N
ioopensource	Y	Y	Y	Y	N	O	N	O	O
terminator	Y	N	N	N	N	N	O	O	N
inputecl	Y	Y	N	N	N	N	O	O	O
outputecl	Y	N	Y	N	O	O	O	O	N
ioecl	Y	Y	Y	Y	O	O	O	O	O
tristateecl	Y	N	Y	Y	O	O	O	O	N

For each buffer type there can be four variants, internal_power, external_power,
differential _input, and diff_inp_and_ext_pwr. Therefore, ibis_buffer can have 44 variants as shown in the following table.

	Buffer Type	Variant	die/pad	in	out	en	gnd	pwr	gnd_c	pwr_c	inv_die
1	input	1	Y	Y	N	N	N	N	N	N	N
2	input	2	Y	Y	N	N	N	N	Y	Y	N
3	input	3	Y	Y	N	N	N	N	N	N	Y
4	input	4	Y	Y	N	N	N	N	Y	Y	Y
5	output	1	Y	N	Y	N	N	N	N	N	N
6	output	2	Y	N	Y	N	Y	Y	Y	Y	N
7	io	1	Y	Y	Y	Y	N	N	N	N	N
8	io	2	Y	Y	Y	Y	Y	Y	Y	Y	N
9	io	3	Y	Y	Y	Y	N	N	N	N	Y
10	io	4	Y	Y	Y	Y	Y	Y	Y	Y	Y
11	tristate	1	Y	N	Y	Y	N	N	N	N	N
12	tristate	2	Y	N	Y	Y	Y	Y	Y	Y	N
13	opendrain	1	Y	N	Y	N	N	N	N	N	N
14	opendrain	2	Y	N	Y	N	Y	N	Y	N	N
15	ioopendrain	1	Y	Y	Y	Y	N	N	N	N	N
16	ioopendrain	2	Y	Y	Y	Y	Y	N	Y	N	N
17	ioopendrain	3	Y	Y	Y	Y	N	N	N	N	Y
18	ioopendrain	4	Y	Y	Y	Y	Y	N	Y	N	Y
19	opensource	1	Y	N	Y	N	N	N	N	N	N
20	opensource	2	Y	N	Y	N	N	Y	N	Y	N
21	ioopensource	1	Y	Y	Y	Y	N	N	N	N	N
22	ioopensource	2	Y	Y	Y	Y	N	Y	N	Y	N
23	ioopensource	3	Y	Y	Y	Y	N	N	N	N	Y
24	ioopensource	4	Y	Y	Y	Y	N	Y	N	Y	Y
25	terminator	1	Y	N	N	N	N	N	N	N	N
26	terminator	2	Y	N	N	N	N	N	Y	Y	N
27	inputecl	1	Y	Y	N	N	N	N	N	N	N
28	inputecl	2	Y	Y	N	N	N	N	Y	Y	N
29	inputecl	3	Y	Y	N	N	N	N	N	N	Y
30	inputecl	4	Y	Y	N	N	N	N	Y	Y	Y
31	outputecl	1	Y	N	Y	N	N	N	N	N	N
32	outputecl	2	Y	N	Y	N	Y	Y	Y	Y	N
33	ioecl	1	Y	Y	Y	Y	N	N	N	N	N
34	ioecl	2	Y	Y	Y	Y	Y	Y	Y	Y	N
35	ioecl	3	Y	Y	Y	Y	N	N	N	N	Y
36	ioecl	4	Y	Y	Y	Y	Y	Y	Y	Y	Y
37	tristateecl	1	Y	N	Y	Y	N	N	N	N	N
38	tristateecl	2	Y	N	Y	Y	Y	Y	Y	Y	N
39	opensink	1	Y	N	Y	N	N	N	N	N	N
40	opensink	2	Y	N	Y	N	Y	N	Y	N	N
41	ioopensink	1	Y	Y	Y	Y	N	N	N	N	N
42	ioopensink	2	Y	Y	Y	Y	Y	N	Y	N	N
43	ioopensink	3	Y	Y	Y	Y	N	N	N	N	Y
44	ioopensink	4	Y	Y	Y	Y	Y	N	Y	N	Y

Based on the model you have selected, you can create two types of ibis_buffer:

• with an external model card
  This is the default option. If you specify the model name the netlist is as follows:

  b1 (1 2 3) "Model name" <other instance parameters>

  For example, the netlist of an ibis_buffer with buffer type = tristate, buffer variant = internal_power, model name = SN74_OUT_33_Typ_27degC, polarity = inv, differential threshold = 1.2V, delay time = 1ms, delay schedule = yes, different element delays = 1p, 2p, 5p, and 2p, is as follows:

  I65 (net013 net011 net012) SN74_OUT_33_Typ_27degC polarity=inv \ 
  vdiff=1.2 delay=1m delay_schedule=[1p 2p 5p 2p] 

• with an IBIS file
  If you specify an IBIS buffer file, then three additional parameters are displayed. In this case the netlist is as follows:

  b1 (1 2 3) ibis_buffer file="IBIS file name" model="IBIS model name"  corner="IBIS model corner" <other instance parameters>

  For example, the netlist with the additional parameters IBIS filename = ~/main.scs, IBIS modelname = IBIS_Model, corner = typical is as follows:

  I65 (net013  net011 net012) ibis_buffer file="~/main.scs" \
  model="IBIS_Model" corner=typical polarity=inv vdiff=1.2 delay=1m \
  delay_schedule=[1p 2p 5p 2p] 

Command-line help

spectre -h ibis_buffer

CDF Parameters

CDF Parameter Label	CDF Parameter	spectre	auCdl	auLvs	hspiceD	UltraSim
Select IBIS Buffer Type	bufferType	x	-	-	x	-
param0	param0	x	-	-	x	-
Select IBIS Buffer Variant	bufferVariant2	x	-	-	x	-
Select IBIS Buffer Variant	bufferVariant4	x	-	-	x	-
IBIS Entry Method	ibisEntryMethod	x	-	-	x	-
Model name	model	x	-	-	x	-
IBIS file name	ibisFile	x	-	-	x	-
IBIS model name	ibisModelName	x	-	-	x	-
IBIS corner	ibisCorner	x	-	-	x	-
Polarity of the buffer	polarity	x	-	-	x	-
Differential threshold	vdiff	x	-	-	x	-
Delay Time	delay	x	-	-	x	-
Delay Schedule	ibisDelaySchedule	x	-	-	x	-
Rise on delay	rise_on_dly	x	-	-	x	-
Rise off delay	rise_off_dly	x	-	-	x	-
Fall on delay	fall_on_dly	x	-	-	x	-
Fall off delay	fall_off_dly	x	-	-	x	-

Syntax/Synopsis

Name ( die [inp] [out] [en] [gnd] [pwr] [gnd_c] [pwr_c] [inv_die] ) ModelName

        <parameter=value> ...

Name ( die [inp] [out] [en] [gnd] [pwr] [gnd_c] [pwr_c] [inv_die] )

        ibis_buffer <parameter=value> ...

Example

I65 (net013 net011 net012) SN74_OUT_33_Typ_27degC polarity=inv \ 
vdiff=1.2 delay=1m delay_schedule=[1p 2p 5p 2p] 

b1 (1 2 3) ibis_buffer file="IBIS file name" model="IBIS model name"  corner="IBIS model corner" <other instance parameters>

Symbol: diode

Junction Diode

The junction diode model includes nonlinear junction capacitance and reverse breakdown.

Command-line help

spectre -h diode

Component Parameters

CDF Parameter Label	CDF Parameter	spectre	auCdl	auLvs	hspiceD	UltraSim
Model name	model	x	-	-	x	-
Device area	area	x	-	-	x	-
Device initially off	off	-	-	-	x	-
Initial diode voltage	Vd	-	-	-	x	-
Junction perimeter factor	perim	x	-	-	-	-
Length	l	x	-	-	x	-
Width	w	x	-	-	x	-
Multiplier	m	x	-	-	x	-
Scale factor	scale	x	-	-	-	-
Temp rise from ambient	trise	x	-	-	-	-
Estimated operating region	region	x	-	-	-	-
Periphery of junction	pj	-	-	-	x	-
Width of polysilicon	wp	x	-	-	x	-
Length of polysilicon	lp	x	-	-	x	-
Width of metal capcitor	wm	x	-	-	x	-
Length of metal capcitor	lm	x	-	-	x	-
Temperature difference	dtemp	-	-	-	x	-

Syntax/Synopsis

Name ( a c ) ModelName <parameter=value> ...

In the forward operation the voltage on the anode (‘a’) is more positive than the voltage on the cathode (‘c’).

Model Synopsis

model ModelName diode <parameter=value> ... 

Example

d0 (dp dn) pdiode l=3e-4 w=2.5e-4 area=1

Sample model statement

model pdiode diode is=1.8e-5 rs=1.43 n=1.22 nz=2.31 gleak=6.2e-5

rsw=10 isw=6.1e-10 ibv=0.95e-3 tgs=2 ik=1.2e7 fc=0.5 cj=1.43e-3

pb=0.967 mj=0.337 cjsw=2.76e-9 vjsw=0.94 jmax=1e20

Additional Information

This device is supported within the altergroups.

Symbol: nbsim

N-type BSIM Field Effect Transistor

nbsim is an n-channel BSIM model.

Command-line help

For related information on MOS, use any of the following help commands:

spectre -h bsim1

spectre -h bsim2

spectre -h bsim3

spectre -h bsim3v3

CDF Parameters

CDF Parameter Label	CDF Parameter	spectre	auCdl	auLvs	hspiceD	UltraSim
Model name	model	x	-	-	x	-
Bulk node connection	bn	-	-	-	-	-
Multiplier	m	x	x	x	x	-
Width	w	x	x	x	x	-
Length	l	x	x	x	x	-
Drain diffusion area	ad	x	-	-	x	-
Source diffusion area	as	x	-	-	-	-
Drain diffusion periphery	pd	x	-	-	x	-
Source diffusion periphery	ps	x	-	-	x	-
Drain diffusion res squares	nrd	x	-	-	x	-
Source diffusion res squares	nrs	x	-	-	x	-
Drain diffusion length	ld	x	-	-	-	-
Source diffusion length	ls	x	-	-	-	-
NQS flag	nqsmod	x	-	-	-	-
Temp rise from ambient	trise	x	-	-	-	-
Estimated operating region	region	x	-	-	-	-
Device initially off	off	-	-	-	x	-
Drain source initial voltage	Vds	-	-	-	x	-
Gate source initial voltage	Vgs	-	-	-	x	-
Bulk source initial voltage	Vbs	-	-	-	x	-
Additional drain resistance	rdc	x	-	-	x	-
Additional source resistance	rsc	x	-	-	x	-
Dist. OD & poly(one side)	sa	x	-	-	-	-
Dist. OD & poly(other side)	sb	x	-	-	-	-
Dist. betn neighbour fingers	sd	x	-	-	-	-
Temperature difference	dtemp	-	-	-	x	-
Source/drain selector	geo	x	-	-	x	-

Syntax/Synopsis

Name ( d g s b ) ModelName <parameter=value> ...

Model Synopsis

model ModelName bsim1 <parameter=value> ...

Example

Sample Instance Statement

m1 (1 2 0 0) nchmod l=5u w=10u as=40u ad=40u pd=28u ps=28u m=1

Sample Model Statement

model nchmod bsim1 vfb0=-0.5 lvfb=0.5 wvfb=0.3 phi0=0.8 eta0=0.056 k1=0.5 muz=454 eg=0.99 gap1=5.5e-04 trs=1e-3 trd=1e-3 xpart=0.5 rs=10 rd=10

Additional Information

This device is supported within the altergroups.

Symbol: nbsim4

N-type BSIM MOS transistor (4 terminals)

BSIM4 is the version-4.21 of the bsim model. BSIM4 transistors require you to use a model statement.

Command-line help

For related information on MOS, use any of the following help commands:

spectre -h bsim4

spectre -h bsim1

spectre -h bsim2

spectre -h bsim3

spectre -h bsim3v3

CDF Parameters

The CDF parameters for nbsim4 are the same as the CDF parameters for nbsim.

Syntax/Synopsis

Name ( d g s b ) ModelName <parameter=value> ...

Model Synopsis

model ModelName bsim4 <parameter=value> ...

Example

m4 (0 2 1 1) pchmod w=2u l=0.8u as=250p ad=250p pd=168p ps=168p m=1

Sample Model Statement

model pchmod bsim4 type=p mobmod=0 capmod=2 version=4.21 toxe=3e-9

cdsc=2.58e-4 cdscb=0 cdscd=6.1e-8 cit=0 nfactor=1.1 xj=9e-8

vfb=0.76vsat=9.2e4 at=3.3e4 a0=1.1 ags=1.0e-20 a1=0 ngate=9e19

vth0=-0.42a1=0 a2=1 delta=0.014 pvag=1e-20 pclm=6.28e-4 pdits=0.2

pditsl=2.3e6pditsd=0.23 fprout=0.2 pdiblcb=3.4e-8 pdiblc1=0.81

drout=0.56pdiblc2=9.84e-6 pscbe1=8.14e8 pscbe2=9.58e-07 lint=5e-9

wint=5e-9dmcg=5e-6 dmci=5e-6 dmdg=5e-6 dmcgt=6e-7 dwj=4.5e-8

rsh=6cgso=7.43e-10 cgdo=7.43e-10 cgbo=2.56e-11 cgsl=1e-14

cgdl=1e-14ckappas=0.5 ckappad=0.5 noff=0.9 voffcv=0.02 acde=1 moin=15

xpart=0kt1l=0 kt2=2.2e-2 lpe0=5.75e-8 lpeb=2.3e-10 dvt0=2.89

dvt1=0.53dvt2=-3.2e-2 dvt0w=0 dvt1w=0 dvt2w=0 dvtp0=7.32e-7

dvtp1=0.12dsub=0.058 eta0=0.001 u0=4.19e-2 ua=8.7e-16 ub=3.06e-18

k1=0.33uc=4.6e-13 ute=-1.5 ua1=4.31e-9 ub1=7.61e-18 uc1=-5.6e-11

k2=-1.87e-2rdsw=369.4 rdw=184.7 rsw=184.7 prwg=3.22e-8 prwb=6.8e-11

wr=1rdswmin=0 rdwmin=0 rswmin=0 prt=0 b0=-1e-20 k3=80 k3b=0

w0=2.5e-6b1=0 keta=-0.047 alpha0=7.4e-2 alpha1=0.005 beta0=30

Additional Information

This device is supported within the altergroups.

Symbol: njfet

N-type Junction Field Effect Transistor

The JFET model is derived from the FET model of Shichman and Hodges. JFETs require you to use a model statement.

Command-line help

spectre -h jfet

CDF Parameters

CDF Parameter Label	CDF Parameter	spectre	auCdl	auLvs	hspiceD	UltraSim
Model name	model	x	-	-	-	-
Bulk node connection	bn	-	-	-	-	-
Device area	area	x	-	-	x	-
Device initially off	off	-	-	-	x	-
Drain source initial voltage	Vds	-	-	-	x	-
Gate source initial voltage	Vgs	-	-	-	x	-
Gate to bulk and src voltage	Vgbs	-	-	-	x	-
Multiplier	m	x	-	-	x	-
Estimated operating region	region	x	-	-	-	-
Width	w	-	-	-	x	-
Length	l	-	-	-	x	-
Temperature difference	dtemp	-	-	-	x	-

Syntax/Synopsis

Name ( d g s [b] ) ModelName <parameter=value> ...

You do not have to specify the back gate terminal when you use the four-terminal model. If left unspecified, the substrate is connected to ground.

Model Synopsis:

model ModelName jfet <parameter=value> ...

Example

jf1 (net1 net2 0) jmod area=1

Sample Model Statement:

model jmod jfet beta=9e-5 lambda=0 type=n vt0=-18.7 rd=10 rs=10 cgs=1.3e-13 pb=0.65

Additional Information

This device is supported within the altergroups.

Symbol: nmes

N-type MES FET Transistor

The GaAs MESFET model was derived from the model by H. Statz and others at Raytheon. This model is completely symmetric and is modified slightly to make it charge conserving. GaAs MESFET instances require that you use a model statement.

Command-line help

spectre -h gaas

spectre -h tom2

spectre -h tom3

CDF Parameters

CDF Parameter Label	CDF Parameter	spectre	auCdl	auLvs	hspiceD	UltraSim
Model name	model	x	-	-	-	-
Bulk node connection	bn		-	-	-	-
Device area	area	x	-	-	x	-
Device initially off	off	-	-	-	x	-
Drain source initial voltage	Vds	-	-	-	x	-
Gate source initial voltage	Vgs	-	-	-	x	-
Bulk source initial voltage	Vbs	-	-	-	x	-
Multiplier	m	x	-	-	x	-
Estimated operating region	region	x	-	-	-	-
Width	w	-	-	-	x	-
Length	l	-	-	-	x	-
Temperature difference	dtemp	-	-	-	x	-

Syntax/Synopsis

Name ( d g s ) ModelName <parameter=value> ...

Model Synopsis:

model ModelName gaas <parameter=value> ...

Example

m1 (1 2 0) nmes area=1 m=2

Sample Model Statement:

model nmes gaas type=n vto=-2 beta=0.06 lambda=0 b=0.25 rs=3.65 alpha=1.9 rd=1.98 is=1.1e-9 n=1.28 fc=0.5 cgs=0.365e-12

Additional Information

This device is supported within the altergroups.

Symbol: nmos

N-type Generic MOS Transistor (3 terminals)

Command-line help

For related information on MOS, use any of the following help commands:

spectre -h mos0

spectre -h mos1

spectre -h ekv

CDF Parameters

CDF Parameter Label	CDF Parameter	spectre	auCdl	auLvs	hspiceD	UltraSim
Model name	model	x	-	-	x	-
Bulk node connection	bn	-	-	-	-	-
Multiplier	m	x	x	x	x	-
Width	w	x	x	x	x	-
Length	l	x	x	x	x	-
Drain diffusion area	ad	x	-	-	x	-
Source diffusion area	as	x	-	-	x	-
Drain diffusion periphery	pd	x	-	-	x	-
Source diffusion periphery	ps	x	-	-	x	-
Drain diffusion res squares	nrd	x	-	-	x	-
Source diffusion res squares	nrs	x	-	-	x	-
Drain diffusion length	ld	x	-	-	-	-
Source diffusion length	ls	x	-	-	-	-
Device initially off	off	-	-	-	x	-
Drain source initial voltage	Vds	-	-	-	x	-
Gate source initial voltage	Vgs	-	-	-	x	-
Bulk source initial voltage	Vbs	-	-	-	x	-
Temp rise from ambient	trise	x	-	-	-	-
Estimated operating region	region	x	-	-	-	-
Hot-electron degradation	degradation	x	-	-	-	-
Additional drain resistance	rdc	x	-	-	x	-
Additional source resistance	rsc	x	-	-	x	-
Dist. OD & poly(one side)	sa	x	-	-	-	-
Dist. OD & poly(other side)	sb	x	-	-	-	-
Dist. betn neighbour fingers	sd	x	-	-	-	-
Temperature difference	dtemp	-	-	-	x	-
Source/drain selector	geo	x	-	-	x	-

Example

M0 (net3 net1 net2) nmos

Symbol: nmos4

N-type Generic MOS Transistor (4 terminals)

Command-line help

For related information on MOS, use any of the following help commands:

spectre -h mos0

spectre -h mos1

spectre -h ekv

CDF Parameters

The CDF parameters for nmos4 are the same as the CDF parameters for nmos.

Example

M0 (net1 net3 net4 net2) nmos4

Symbol: npn

Generic Bipolar Transistor (NPN)

npn is an ntype bjt.

Command-line help

spectre -h bjt

spectre -h bjt2

spectre -h bjt3

spectre -h bjt301

spectre -h vbic

CDF Parameters

CDF Parameter Label	CDF Parameter	spectre	auCdl	auLvs	hspiceD	UltraSim
Model name	model	x	-	-	x	-
Bulk node connection	bn	-	-	-	-	-
Device area	area	x	-	-	x	-
Base-emitter voltage	Vbe	-	-	-	x	-
Collector-emitter voltage	Vce	-	-	-	x	-
Device initially off	off	-	-	-	x	-
Multiplier	m	x	-	-	x	-
Temp rise from ambient	trise	x	-	-	-	-
Estimated operating region	region	x	-	-	-	-
Temperature difference	dtemp	-	-	-	x	-
Base area	areab	-	-	-	x	-
Collector area	areac	-	-	-	x	-
Temp Rise Specifier	triseSpec	x	-	-	-	-
dtmp -Temp rise from ambient	dtmp	x	-	-	-	-
dtemp -Temp rise from ambient	dtempn	-	-	-	-	-

Syntax/Synopsis

Name ( c b e [s] ) ModelName <parameter=value> ...

You do not have to specify the substrate terminal. If you do not specify it, the substrate is connected to ground.

Model Synopsis:

model ModelName bjt <parameter=value> ...

Example

q1 (vcc net3 minus) npn_mod region=fwd area=1 m=1

Following is a sample model statement:

model npn_mod bjt type=npn is=10e-13 bf=200 va=58.8 ikf=5.63e-3 rb=700 rbm=86 re=3.2 cje=0.352e-12 pe=0.76 me=0.34 tf=249e-12 cjc=0.34e-12 pc=0.55

Additional Information

This device is supported within the altergroups.

Symbol: ntft

N-Type Poly-Si TFT (NTFT)

ntft is an n-type polysilicon tft. It can have a maximum of five terminals with drain, gate and source being mandatory terminals and substrate and thermal being optional.

The diagrams show the terminal with none, one or two optional nodes selected.

Command-line help

spectre -h psitft

CDF Parameters

CDF Parameter Label	CDF Parameter	spectre	spectreS	cdsSpice	auCdl	auLvs	hspiceS	hspiceD	UltraSim
Model name	model	x	-	-	-	-	-	-	-
Optional Nodes	Opins	x	-	-	-	-	-	-	-
Optional Bulk Node _B	bulknode	x	-	-	-	-	-	-	-
Optional Thermal Node _T	pinT	x	-	-	-	-	-	-	-
Width	w	x	-	-	-	-	-	-	-
Length	l	x	-	-	-	-	-	-	-
Drain diffusion res squares	nrd	x	-	-	-	-	-	-	-
Source diffusion res squares	nrs	x	-	-	-	-	-	-	-
Multiplier	m	x	-	-	-	-	-	-	-
Estimated operating region	region	x	-	-	-	-	-	-	-
Thermal resistance	rth0	x	-	-	-	-	-	-	-
Thermal capacitance	cth0	x	-	-	-	-	-	-	-
Num of segments	nseg	x	-	-	-	-	-	-	-

Syntax/Synopsis

Name ( d g s [b] [t] ) ModelName <parameter=value> ...

Model Synopsis

model ModelName psitft <parameter=value> ...

Sample Instance Statement

m4 (0 2 1 1 3) nch w=2u l=0.8u

Sample Model Statement

model nch psitft type=n

Additional Information

This device is supported within the altergroups.

Symbol: pbsim

P-type BSIM MOS Transistor (3 terminals)

pbsim is a p-channel BSIM model.

Command-line help

For related information on MOS, use any of the following help commands:

spectre -help bsim1

spectre -help bsim2

spectre -help bsim3

spectre -help bsim3v3

CDF Parameters

CDF Parameter Label	CDF Parameter	spectre	auCdl	auLvs	hspiceD	UltraSim
Model name	model	x	-	-	x	-
Bulk node connection	bn	-	-	-	-	-
Multiplier	m	x	x	x	x	-
Width	w	x	x	x	x	-
Length	l	x	x	x	x	-
Drain diffusion area	ad	x	-	-	x	-
Source diffusion area	as	x	-	-	x	-
Drain diffusion periphery	pd	x	-	-	x	-
Source diffusion periphery	ps	x	-	-	x	-
Drain diffusion res squares	nrd	x	-	-	x	-
Source diffusion res squares	nrs	x	-	-	x	-
Drain diffusion length	ld	x	-	-	-	-
Source diffusion length	ls	x	-	-	-	-
NQS flag	nqsmod	x	-	-	-	-
Device initially off	off	-	-	-	x	-
Drain source initial voltage	Vds	-	-	-	x	-
Gate source initial voltage	Vgs	-	-	-	x	-
Bulk source initial voltage	Vbs	-	-	-	x	-
Additional drain resistance	rdc	x	-	-	x	-
Additional source resistance	rsc	x	-	-	x	-
Temp rise from ambient	trise	x	-	-	-	-
Estimated operating region	region	x	-	-	-	-
Dist. OD & poly(one side)	sa	x	-	-	-	-
Dist. OD & poly(other side)	sb	x	-	-	-	-
Dist. betn neighbour fingers	sd	x	-	-	-	-
Temperature difference	dtemp	-	-	-	x	-
Source/drain selector	geo	x	-	-	x	-

Syntax/Synopsis

Name ( d g s b ) ModelName <parameter=value> ...

Following is the model synopsis:

model ModelName bsim1 <parameter=value> ...

Example

m1 (1 2 0 0) nchmod l=5u w=10u as=40u ad=40u pd=28u ps=28u m=1

Following is the sample model statement:

model nchmod bsim1 vfb0=-0.5 lvfb=0.5 wvfb=0.3 phi0=0.8 eta0=0.056 k1=0.5

muz=454 eg=0.99 gap1=5.5e-04 trs=1e-3 trd=1e-3 xpart=0.5 rs=10 rd=10

Additional Information

This device is supported within the altergroups.

Symbol: pbsim4

P-type BSIM MOS transistor (4 terminals)

pbsim is a p-channel BSIM model.

Command-line help

For related information on MOS, use any of the following help commands:

spectre -help bsim1

spectre -help bsim2

spectre -help bsim3

spectre -help bsim3v3

CDF Parameters

The CDF parameters for pbsim4 are the same as the CDF parameters for pbsim.

Syntax/Synopsis

Name ( d g s b ) ModelName <parameter=value> ...

Following is the model synopsis:

model ModelName bsim1 <parameter=value> ...

Example

m1 (1 2 0 0) nchmod l=5u w=10u as=40u ad=40u pd=28u ps=28u m=1

Following is the sample model statement:

model nchmod bsim1 vfb0=-0.5 lvfb=0.5 wvfb=0.3 phi0=0.8 eta0=0.056 k1=0.5

muz=454 eg=0.99 gap1=5.5e-04 trs=1e-3 trd=1e-3 xpart=0.5 rs=10 rd=10

Additional Information

This device is supported within the altergroups.

Symbol: pjfet

P-type Junction Field Effect Transistor

The JFET model is derived from the FET model of Shichman and Hodges. JFETs require you to use a model statement.

Command-line help

spectre -h jfet

CDF Parameters

CDF Parameter Label	CDF Parameter	spectre	auCdl	auLvs	hspiceD	UltraSim
Model name	model	x	-	-	-	-
Bulk node connection	bn	-	-	-	-	-
Device area	area	x	-	-	x	-
Device initially off	off	-	-	-	x	-
Drain source initial voltage	Vds	-	-	-	x	-
Gate source initial voltage	Vgs	-	-	-	x	-
Gate to bulk and src voltage	Vgbs	-	-	-	x	-
Multiplier	m	x	-	-	x	-
Width	w	-	-	-	x	-
Length	l	-	-	-	x	-
Temperature difference	dtemp	-	-	-	x	-
Estimated operating region	region	x	-	-	-	-

Syntax/Synopsis

Name ( d g s [b] ) ModelName <parameter=value> ...

You do not have to specify the back gate terminal when you use the four-terminal model. If left unspecified, the substrate is connected to ground.

Model Synopsis:

model ModelName jfet <parameter=value> ...

Example

jf1 (net1 net2 0) jmod area=1

Following is a sample model statement:

model jmod jfet beta=9e-5 lambda=0 type=n vt0=-18.7 rd=10 rs=10 cgs=1.3e-13 pb=0.65

Additional Information

This device is supported within the altergroups.

Symbol: psoip

P-type BSIM SOI model

psoip is a p-type BSIM SOI model

Command-line help

spectre -h bsimsoi

CDF Parameters

CDF Parameter Label	CDF Parameter	spectre	auCdl	auLvs	hspiceD	UltraSim
Model name	model	x	-	-	-	-
Temperature Node Present	TnodeOut(earlier this was bn,therefore check)	x	-	-	-	-
Thermal Node(T)	Tnode	x	-	-	-	-
Ext. Body Contact (PinP)	PinP	x	-	-	-	-
Body Node	BodyNodePin	x	-	-	-	-
Width	w	x	-	-	-	-
Length	l	x	-	-	-	-
Source diffusion area	as	x	-	-	-	-
Drain diffusion area	ad	x	-	-	-	-
Source diffusion periphery	ps	x	-	-	-	-
Drain diffusion periphery	pd	x	-	-	-	-
Drain diffusion res squares	nrd	x	-	-	-	-
Source diffusion res squares	nrs	x	-	-	-	-
Multiplier	m	x	-	-	-	-

Syntax/Synopsis

Name ( d g s e [p] [b] [t] ) ModelName <parameter=value> ...

Following is the model synopsis:

model ModelName bsimsoi <parameter=value> ...

Example

I7 (0 net9 vdd! vdd!) bsimsoi w=1u 1=1u

Following is the sample model statement:

model psoip_model bsimsoi type = p beta0 = 0 dvt = -0.032 delta = 0.01 k1 = 0.6 xbjt = 1 kt1 = -0.11 ndif = -1 noif = 1 vsdfb = 0 vevb = 0.075 dvt1 = 0.53

Additional Information

In psoip, there are four optional parameters in the CDF properties of the p-cell:

• Temperature Node present (Tnode Out)
• Thermal Node (T)
• External Body contact (P)
• Body Node (B)

There can be a number of permutaions and combinations for these pins, however, only following seven permutaions are supported:

if Tnodeout is not selected:

4 nodes: D G S E

5 nodes: D G S E P

6 nodes: D G S E P B

7 nodes: D G S E P B T

if Tnodeout is selected:

5 nodes: D G S E T

6 nodes: D G S E P T

7 nodes: D G S E P B T

Symbol: nsoip

N-type BSIM SOI model

nsoip is a n-type BSIM SOI model

Command-line help

spectre -h bsimsoi

CDF Parameters

CDF Parameter Label	CDF Parameter	spectre	auCdl	auLvs	hspiceD	UltraSim
Model name	model	x	-	-	-	-
Temperature Node Present	TnodeOut(earlier this was bn,therefore check)	x	-	-	-	-
Thermal Node(T)	Tnode	x	-	-	-	-
Ext. Body Contact (PinP)	PinP	x	-	-	-	-
Body Node	BodyNodePin	x	-	-	-	-
Width	w	x	-	-	-	-
Length	l	x	-	-	-	-
Source diffusion area	as	x	-	-	-	-
Drain diffusion area	ad	x	-	-	-	-
Source diffusion periphery	ps	x	-	-	-	-
Drain diffusion periphery	pd	x	-	-	-	-
Drain diffusion res squares	nrd	x	-	-	-	-
Source diffusion res squares	nrs	x	-	-	-	-
Multiplier	m	x	-	-	-	-

Syntax/Synopsis

Name ( d g s e [p] [b] [t] ) ModelName <parameter=value> ...

Following is the model synopsis:

model ModelName bsimsoi <parameter=value> ...

Example

I6 (vdd! net9 0 0 ) bsimsoi w=1u 1=1u

Following is the sample model statement:

model nsoip_model bsimsoi type = n beta0 = 0 dvt = -0.032 delta = 0.01 k1 = 0.6 xbjt = 1 kt1 = -0.11 ndif = -1 noif = 1 vsdfb = 0 vevb = 0.075 dvt1 = 0.53

Additional Information

In nsoip, there are four optional parameters in the CDF properties of the n-cell:

• Temperature Node present (Tnode Out)
• Thermal Node (T)
• External Body contact (P)
• Body Node (B)

There can be a number of permutaions and combinations for these pins, however, only following seven permutaions are supported:

if Tnodeout=0 or not given (default is 0)

4 nodes: D G S E

5 nodes: D G S E P

6 nodes: D G S E P B

7 nodes: D G S E P B T

if Tnodeout=1

5 nodes: D G S E T

6 nodes: D G S E P T

7 nodes: D G S E P B T

Symbol: pmos

P-type Generic MOS Transistor (3 terminals)

Command-line help

For related information on MOS, use any of the following help commands:

spectre -h mos0

spectre -h mos1

spectre -h ekv

CDF Parameters

CDF Parameter Label	CDF Parameter	spectre	auCdl	auLvs	hspiceD	UltraSim
Model name	model	x	-	-	-	-
Bulk node connection	bn	-	-	-	-	-
Multiplier	m	x	x	x	x	-
Width	w	x	x	x	x	-
Length	l	x	x	x	x	-
Drain diffusion area	ad	x	-	-	x	-
Source diffusion area	as	x	-	-	x	-
Drain diffusion periphery	pd	x	-	-	x	-
Source diffusion periphery	ps	x	-	-	x	-
Drain diffusion res squares	nrd	x	-	-	x	-
Source diffusion res squares	nrs	x	-	-	x	-
Drain diffusion length	ld	x	-	-	-	-
Source diffusion length	ls	x	-	-	-	-
Device initially off	off	-	-	-	x	-
Drain source initial voltage	Vds	-	-	-	x	-
Gate source initial voltage	Vgs	-	-	-	x	-
Bulk source initial voltage	Vbs	-	-	-	x	-
Temp rise from ambient	trise	x	-	-	-	-
Estimated operating region	region	x	-	-	-	-
Hot-electron degradation	degradation	x	-	-	-	-
Additional drain resistance	rdc	x	-	-	x	-
Additional source resistance	rsc	x	-	-	x	-
Dist. OD & poly(one side)	sa	x	-	-	-	-
Dist. OD & poly(other side)	sb	x	-	-	-	-
Dist. betn neighbour fingers	sd	x	-	-	-	-
Temperature difference	dtemp	-	-	-	x	-
Source/drain selector	geo	x	-	-	x	-

Symbol: pmos4

P-type Generic MOS Transistor (4 terminals)

Command-line help

For related information on MOS, use any of the following help commands:

spectre -h mos0

spectre -h mos1

spectre -h ekv

CDF Parameters

The CDF parameters for pmos4 are the same as the CDF parameters for pmos.

Symbol: pnp

Generic Bipolar Transistor (PNP)

pnp is a p-type bjt.

Command-line help

spectre -h bjt

spectre -h bjt2

spectre -h bjt3

spectre -h bjt301

spectre -h vbic

CDF Parameters

CDF Parameter Label	CDF Parameter	spectre	auCdl	auLvs	hspiceD	UltraSim
Model name	model	x	-	-	x	-
Bulk node connection	bn	-	-	-	-	-
Device area	area	x	-	-	x	-
Multiplier	m	x	-	-	x	-
Temp rise from ambient	trise	x	-	-	-	-
Temp Rise Specifier	triseSpec	x	-	-	-	-
dtmp -Temp rise from ambient	dtmp	x	-	-	-	-
dtemp -Temp rise from ambient	dtempn	-	-	-	-	-
Estimated operating region	region	x	-	-	-	-
Base-emitter voltage	Vbe	-	-	-	x	-
Collector-emitter voltage	Vce	-	-	-	x	-
Device initially off	off	-	-	-	x	-
Temperature difference	dtemp	x	-	-	x	-
Base area	areab	-	-	-	x	-
Collector area	areac	-	-	-	x	-

Syntax/Synopsis

Name ( c b e [s] ) ModelName <parameter=value> ...

You do not have to specify the substrate terminal. If you do not specify it, the substrate is connected to ground.

Following is the model synopsis:

model ModelName bjt <parameter=value> ...

Example

q1 (vcc net3 minus) npn_mod region=fwd area=1 m=1

Following is a sample model statement:

model npn_mod bjt type=npn is=10e-13 bf=200 va=58.8 ikf=5.63e-3 rb=700

rbm=86 re=3.2 cje=0.352e-12 pe=0.76 me=0.34 tf=249e-12 cjc=0.34e-12

pc=0.55

Additional Information

This device is supported within the altergroups.

Symbol: ptft

P-Type Poly-Si TFT (PTFT)

ptft is a p-type polysilicon tft. It can have a maximum of five terminals with drain, gate and source being mandatory terminals and substrate and thermal being optional.

The diagrams show the terminal with none, one or two optional nodes selected.

Command-line help

spectre -h psitft

CDF Parameters

CDF Parameter Label	CDF Parameter	spectre	spectreS	cdsSpice	auCdl	auLvs	hspiceS	hspiceD	UltraSim
Model name	model	x	-	-	-	-	-	-	-
Optional Nodes	Opins	x	-	-	-	-	-	-	-
Optional Bulk Node _B	pinB	x	-	-	-	-	-	-	-
Optional Thermal Node _T	pinT	x	-	-	-	-	-	-	-
Width	w	x	-	-	-	-	-	-	-
Length	l	x	-	-	-	-	-	-	-
Drain diffusion res squares	nrd	x	-	-	-	-	-	-	-
Source diffusion res squares	nrs	x	-	-	-	-	-	-	-
Multiplier	m	x	-	-	-	-	-	-	-
Estimated operating region	region	x	-	-	-	-	-	-	-
Thermal resistance	rth0	x	-	-	-	-	-	-	-
Thermal capacitance	cth0	x	-	-	-	-	-	-	-
Num of segments	nseg	x	-	-	-	-	-	-	-

Syntax/Synopsis

Name ( d g s [b] [t] ) ModelName <parameter=value> ...

Model Synopsis

model ModelName psitft <parameter=value> ...

Sample Instance Statement

m4 (0 2 1 1 3) nch w=2u l=0.8u

Sample Model Statement

model nch psitft type=p

Additional Information

This device is supported within the altergroups.

Symbol: psoi

Independent Resistive Source

CDF Parameters

CDF Parameter Label	CDF Parameter	spectre	auCdl	auLvs	hspiceD	UltraSim
Bulk node connection	bn	-	-	x	-	-
Multiplier	m	-	x	x	-	-
Width	w	-	x	x	-	-
Length	l	-	x	x	-	-

Symbol: schottky

Schottky Diode

A special type of diode that has a low forward-voltage drop leading to greater system efficiency.

Command-line help

spectre -h diode

CDF Parameters

CDF Parameter Label	CDF Parameter	spectre	auCdl	auLvs	hspiceD	UltraSim
Model name	model	x	-	-	-	-
Device area	area	x	-	-	x	x
Device initially off	off	-	-	-	x	x
Initial diode voltage	Vd	-	-	-	x	x
Junction perimeter factor	perim	x	-	-	-	-
Length	l	x	-	-	x	x
Width	w	x	-	-	x	x
Multiplier	m	x	-	-	x	x
Scale factor	scale	x	-	-	-	-
Temp rise from ambient	trise	x	-	-	-	-
Estimated operating region	region	x	-	-	-	-
Periphery of junction	pj	-	-	-	x	x
Width of polysilicon	wp	-	-	-	x	x
Length of polysilicon	lp	-	-	-	x	x
Width of metal capacitator	wm	-	-	-	x	x
Length of metal capacitator	lm	-	-	-	x	x
Temperature difference	dtemp	-	-	-	x	x

Example

D0 (net1 net2) schottky

Symbol: usernpn

User Specific NPN Bipolar Transistor (3 terminals)

Command-line help

spectre -h bjt

CDF Parameters

CDF Parameter Label	CDF Parameter	spectre	auCdl	auLvs	hspiceD	UltraSim
Model name	model	x	-	-	x	-
Bulk node connection	bn	-	-	-	-	-
Device area	area	x	-	-	x	-
Base-emitter voltage	Vbe	-	-	-	x	-
Collector-emitter voltage	Vce	-	-	-	x	-
Device initially off	off	-	-	-	x	-
Emitter length	le	x	-	-	-	-
Emitter width	we	x	-	-	-	-
Collector length	lc	x	-	-	-	-
Temp Rise Specifier	triseSpec	x	-	-	-	-
Temp rise from ambient	trise	x	-	-	-	-
dtmp -Temp rise from ambient	dtmp	x	-	-	-	-
dtemp -Temp rise from ambient	dtemp	x	-	-	-	-
Estimated operating region	region	x	-	-	-	-

Syntax/Synopsis

Name ( c b e [s] ) ModelName <parameter=value> ...

You do not have to specify the substrate terminal. If you do not specify it, the substrate is connected to ground.

Model Synopsis:

model ModelName bjt <parameter=value> ...

Example

Sample Instance Statement:

q1 (vcc net3 minus) npn_mod region=fwd area=1 m=1

Sample Model Statement:

model npn_mod bjt type=npn is=10e-13 bf=200 va=58.8 ikf=5.63e-3 rb=700 rbm=86

re=3.2 cje=0.352e-12 pe=0.76 me=0.34 tf=249e-12 cjc=0.34e-12 pc=0.55

Additional Information

This device is supported within the altergroups.

Symbol: userpnp

User Specific PNP Bipolar Transistor (3 terminals)

Command-line help

spectre -h bjt

CDF Parameters

CDF Parameter Label	CDF Parameter	spectre	auCdl	auLvs	hspiceD	UltraSim
Model name	model	x	-	-	-	-
Bulk node connection	bn	-	-	-	-	-
Device area	area	x	-	-	x	x
Base-emitter voltage	Vbe	-	-	-	x	x
Collector-emitter voltage	Vce	-	-	-	x	x
Device initially off	off	-	-	-	x	x
Emitter length	le	x	-	-	-	x
Emitter width	we	x	-	-	-	x
Collector length	lc	x	-	-	-	x
Temp Rise Specifier	triseSpec	x	-	-	-	-
Temp rise from ambient	trise	x	-	-	-	-
dtmp -Temp rise from ambient	dtmp	x	-	-	-	-
dtemp -Temp rise from ambient	dtemp	x	-	-	-	-
Estimated operating region	region	x	-	-	-	-

Symbol: vnpn

Variable Bipolar Transistor (VNPN)

vnpn is a variable terminal n-type bjt. It can have a maximum of five terminals with collector, emitter and base being mandatory terminals and substrate and thermal being optional.

The diagrams show the terminal with none, one or two optional nodes selected.

Command-line help

spectre -h bjt

spectre -h bjt2

spectre -h bjt3

spectre -h bjt301

spectre -h vbic

CDF Parameters

CDF Parameter Label	CDF Parameter	spectre	spectreS	cdsSpice	auCdl	auLvs	hspiceS	hspiceD	UltraSim
Model name	model	x	-	-	-	-	-	-	-
Optional Nodes	Opins	x
Optional Substrate Node _S	pinS	x	-	-	-	-	-	-	-
Optional Thermal Node _T	pint	x	-	-	-	-	-	-	-
Optional Thermal Node _dT	pindt	x	-	-	-	-	-	-	-
Temp Rise Specifier	triseSpec	x	-	-	-	-	-	-	-
Device area	area	x	-	-	-	-	-	-	-
Multiplier	m	x	-	-	-	-	-	-	-
Temp rise from ambient	trise	x	-	-	-	-	-	-	-
dtmp -Temp rise from ambient	dtmp	x	-	-	-	-	-	-	-
dtemp -Temp rise from ambient	dtempn	x	-	-	-	-	-	-	-
Estimated operating region	region	x	-	-	-	-	-	-	-
Self Heating Switch	self_heating	x	-	-	-	-	-	-	-
Length of Emitter Window	le0	x	-	-	-	-	-	-	-
Width of Emitter Window	be0	x	-	-	-	-	-	-	-
Number of emitter contacts	ne	x	-	-	-	-	-	-	-
Number of base contacts	nb	x	-	-	-	-	-	-	-
Location of collector contact	location	x	-	-	-	-	-	-	-
Number of collector contacts	ncbjt	x	-	-	-	-	-	-	-
Contact configuration	order	x	-	-	-	-	-	-	-
Number of structures in parallel	npas	x	-	-	-	-	-	-	-

Syntax/Synopsis

Name ( c b e [s] ) ModelName <parameter=value> ...

You do not have to specify the substrate terminal. If you do not specify it, the substrate is connected to ground.

Model Synopsis

model ModelName bjt <parameter=value> ...

Example

q1 (vcc net3 minus) npn_mod region=fwd area=1 m=1

Following is a sample model statement:

model npn_mod bjt type=npn is=10e-13 bf=200 va=58.8 ikf=5.63e-3 rb=700 rbm=86 re=3.2 cje=0.352e-12 pe=0.76 me=0.34 tf=249e-12 cjc=0.34e-12 pc=0.55

Additional Information

This device is supported within the altergroups.

Symbol: vpnp

Variable Bipolar Transistor (VPNP)

vpnp is a variable terminal p-type bjt. It can have a maximum of five terminals with collector, emitter and base being mandatory terminals and substrate and thermal being optional.

The diagrams show the terminal with none, one or two optional nodes selected.

Command-line help

spectre -h bjt

spectre -h bjt2

spectre -h bjt3

spectre -h bjt301

spectre -h vbic

CDF Parameters

CDF Parameter Label	CDF Parameter	spectre	spectreS	cdsSpice	auCdl	auLvs	hspiceS	hspiceD	UltraSim
Model name	model	x	-	-	-	-	-	-	-
Optional Nodes	Opins	x
Optional Substrate Node _S	pinS	x	-	-	-	-	-	-	-
Optional Thermal Node _T	pint	x	-	-	-	-	-	-	-
Optional Thermal Node _dT	pindt	x	-	-	-	-	-	-	-
Temp Rise Specifier	triseSpec	x	-	-	-	-	-	-	-
Device area	area	x	-	-	-	-	-	-	-
Multiplier	m	x	-	-	-	-	-	-	-
Temp rise from ambient	trise	x	-	-	-	-	-	-	-
dtmp -Temp rise from ambient	dtmp	x	-	-	-	-	-	-	-
dtemp -Temp rise from ambient	dtempn	x	-	-	-	-	-	-	-
Estimated operating region	region	x	-	-	-	-	-	-	-
Self Heating Switch	self_heating	x	-	-	-	-	-	-	-
Length of Emitter Window	le0	x	-	-	-	-	-	-	-
Width of Emitter Window	be0	x	-	-	-	-	-	-	-
Number of emitter contacts	ne	x	-	-	-	-	-	-	-
Number of base contacts	nb	x	-	-	-	-	-	-	-
Location of collector contact	location	x	-	-	-	-	-	-	-
Number of collector contacts	ncbjt	x	-	-	-	-	-	-	-
Contact configuration	order	x	-	-	-	-	-	-	-
Number of structures in parallel	npas	x	-	-	-	-	-	-	-

Syntax/Synopsis

Name ( c b e [s] ) ModelName <parameter=value> ...

You do not have to specify the substrate terminal. If you do not specify it, the substrate is connected to ground.

Following is the model synopsis:

model ModelName bjt <parameter=value> ...

Example

q1 (vcc net3 minus) npn_mod region=fwd area=1 m=1

Following is a sample model statement:

model npn_mod bjt type=npn is=10e-13 bf=200 va=58.8 ikf=5.63e-3 rb=700

rbm=86 re=3.2 cje=0.352e-12 pe=0.76 me=0.34 tf=249e-12 cjc=0.34e-12

pc=0.55

Additional Information

This device is supported within the altergroups.

Symbol: zener

Zener Diode

It has p-n junction in reverse bias to use the zener effect to maintain a constant voltage.

Command-line help

spectre -h diode

CDF Parameters

CDF Parameter Label	CDF Parameter	spectre	auCdl	auLvs	hspiceD	UltraSim
Model name	model	x	-	-	x	x
Device area	area	x	-	-	x	x
Device initially off	off	-	-	-	x	x
Initial diode voltage	Vd	-	-	-	x	x
Junction perimeter factor	perim	x	-	-	-	-
Length	l	x	-	-	x	x
Width	w	x	-	-	x	x
Multiplier	m	x	-	-	x	x
Scale factor	scale	x	-	-	-	-
Temp rise from ambient	trise	x	-	-	-	-
Estimated operating region	region	x	-	-	-	-
Periphery of junction	pj	-	-	-	x	x
Width of polysilicon	wp	-	-	-	x	x
Length of polysilicon	lp	-	-	-	x	x
Width of metal capacitator	wm	-	-	-	x	x
Length of metal capacitator	lm	-	-	-	x	x
Temperature difference	dtemp	-	-	-	x	x

auCdl and auLvs Components

The following components are supported only by auCdl or auLvs.

Symbol: nsoi

CDF Parameters

CDF Parameter Label	CDF Parameter	spectre	auCdl	auLvs	hspiceD	UltraSim
Bulk node connection	bn	-	-	x	-	-
Multiplier	m	-	x	x	-	-
Width	w	-	x	x	-	-
Length	l	-	x	x	-	-

Symbol: scr

Silicon Controlled Rectifier

scr is a conventional rectifier controlled by a gate signal. Although the main circuit is a rectifier, the application of a forward voltage is not enough for conduction. Therefore, a gate signal controls the rectifier conduction.

CDF Parameters

CDF Parameter Label	CDF Parameter	spectre	auCdl	auLvs	hspiceD	UltraSim
Bulk node connection	bn	-	-	x	-	-

Example

P231  32  5  21  8  7  PSCR 

PN01  25  14  18  2  PMOD  IC=-.8 .8 -15

Symbol: bjt504tnpn

Compact Bipolar-Transistor Model

The bjt504 model provides a detailed description of a vertical integrated NPN transistor.

Command-line help

spectre -h bjt502

CDF Parameters

CDF Parameter Label	CDF Parameter	spectre	spectreS	cdsSpice	auCdl	auLvs	hspiceS	hspiceD	UltraSim
Model name	model	x	-	-	-	-	-	-	-
Number of devices in parallel	mult	x	-	-	-	-	-	-	-
Estimated operating region	region	x	-	-	-	-	-	-	-
Multiplicity factor	m	x	-	-	-	-	-	-	-
Alias of mult	area	x	-	-	-	-	-	-	-

Syntax/Synopsis

Name ( c b e s ) ModelName <parameter=value> ...

Symbol: bjt504tpnp

Compact Bipolar-Transistor Model

The bjt504 model provides a detailed description of a vertical integrated PNP transistor.

Command-line help

spectre -h bjt502

CDF Parameters

CDF Parameter Label	CDF Parameter	spectre	spectreS	cdsSpice	auCdl	auLvs	hspiceS	hspiceD	UltraSim
Model name	model	x	-	-	-	-	-	-	-
Number of devices in parallel	mult	x	-	-	-	-	-	-	-
Estimated operating region	region	x	-	-	-	-	-	-	-
Multiplicity factor	m	x	-	-	-	-	-	-	-
Alias of mult	area	x	-	-	-	-	-	-	-

Syntax/Synopsis

Name ( c b e s ) ModelName <parameter=value> ...

Symbol: bsim4

BSIM Effective MOS Transistor

This component is a simple BSIM MOS transistor.

Command-line help

spectre -h bsim4

CDF Parameters

CDF Parameter Label	CDF Parameter	spectre	spectreS	cdsSpice	auCdl	auLvs	hspiceS	hspiceD	UltraSim
Model name	model	x	-	-	-	-	-	-	-
Integral-1st distribution func	sca	x	-	-	-	-	-	-	-
Integral-2nd distribution func	scb	x	-	-	-	-	-	-	-
Integral-3rd distribution func	scc	x	-	-	-	-	-	-	-
Distance to a single well edge	sc	x	-	-	-	-	-	-	-
shift in 0-bias threshold vth0	delvo	x	-	-	-	-	-	-	-
Gate contact-channel edge	xgw	x	-	-	-	-	-	-	-
Number of gate contacts	ngcon	x	-	-	-	-	-	-	-

Syntax/Synopsis

Name ( d g s b ) ModelName <parameter=value> ...

Symbol: vbic

VBIC Bipolar Transistor

This component is a bipolar transistor.

Command-line help

spectre -h vbic

CDF Parameters

CDF Parameter Label	CDF Parameter	spectre	spectreS	cdsSpice	auCdl	auLvs	hspiceS	hspiceD	UltraSim
Model name	model	x	-	-	-	-	-	-	-
Optional Node configuration	vbicOpNodes	x	-	-	-	-	-	-	-
Device area	area	x	-	-	-	-	-	-	-
Multiplier	m	x	-	-	-	-	-	-	-
Estimated operating region	region	x	-	-	-	-	-	-	-
Temp rise from ambient	trise	x	-	-	-	-	-	-	-
Temperature difference	dtemp	x	-	-	-	-	-	-	-

Syntax/Synopsis

Name ( c b e [s] [dt] [tl] ) ModelName <parameter=value> ...

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