dta=0 degC

Difference between the local and global ambient temperatures.

mult=1

Multiplication factor.

printscaled=0

Print scaled parameter info if value not equal to zero.

trise=0

Difference between the local ambient and global ambient temperature.

region=fwd

Estimated DC operating region, used as a convergence aid. Possible values are off, sat, rev, and fwd.

m=1

Alias of mult.

area=1

Multiplication factor for bjt devices.

level=505

Model level.

paramchk=0

Level of clip warning info.

version=505

Model version.

type=npn

Flag for NPN (1) or PNP (-1) transistor type.
Possible values are npn, pnp, npnv, pnpv, npnl, and pnpl.

tref=25 degC

Reference temperature.

exmod=1

Flag for extended modeling of the reverse current gain.

exphi=1

Flag for distributed high-frequency effects in transient.

exavl=0

Flag for extended modeling of avalanche currents.

is=2.2e-17 A

Saturation current of main current.

nff=1

Non-ideality factor of forward main current.

nfr=1

Non-ideality factor of reverse main current.

ik=0.1 A

CE high injection knee current.

ver=2.5 V

Reverse Early voltage.

vef=44 V

Forward Early voltage.

ibi=1e-19 A

Saturation current of ideal base current.

nbi=1

Non-ideality factor of ideal base current.

ibis=0 A

Saturation current of ideal side wall base current.

nbis=1

Non-ideality factor of ideal side wall base current.

ibf=2.7e-15 A

Saturation current of non-ideal forward base current.

mlf=2

Non-ideality factor of non-ideal forward base current.

ibfs=0 A

Saturation current of non-ideal side wall forward base current.

mlfs=2

Non-ideality factor of non-ideal side wall forward base current.

ibx=3.14e-18 A

Saturation current of extrinsic reverse base current.

ikbx=0.0143 A

Extrinsic CB high injection knee current.

ibr=1e-15 A

Saturation current of non-ideal reverse base current.

mlr=2

Non-ideality factor of non-ideal reverse base current.

xext=0.63

Part of currents and charges that belong to extrinsic region.

izeb=0 A

Pre-factor of EB Zener tunneling current.

nzeb=22

Coefficient of EB Zener tunneling current.

izcb=0 A

Pre-factor of CB Zener tunneling current.

nzcb=22

Coefficient of CB Zener tunneling current.

swavl=1

Switch of avalanche factor Gem model.

aavl=400

aavl of swavl=1 Gem model.

cavl=-0.37

cavl of swavl=1 Gem model.

itoavl=0.5 A

Current dependence parameter of swavl=1 Gem model.

bavl=25

bavl of swavl=1 Gem model.

vdcavl=0.1 V

CB diffusion voltage dedicated for swavl=1 Gem model.

wavl=1.1e-06 m

Epilayer thickness used in weak-avalanche model.

vavl=3 V

Voltage determining curvature of avalanche current.

sfh=0.3

Current spreading factor of avalanche model when exavl=1.

re=5 Ω

Emitter resistance.

rbc=23 Ω

Constant part of base resistance.

rbv=18 Ω

Zero-bias value of variable part of the base resistance.

rcc=12 Ω

Constant part of collector resistance.

rcblx=0 Ω

Resistance Collector Buried Layer extrinsic.

rcbli=0 Ω

Resistance Collector Buried Layer Intrinsic.

rcv=150 Ω

Resistance of un-modulated epilayer.

scrcv=1.25e+03 Ω

Space charge resistance of epilayer.

ihc=0.004 A

Critical current for velocity saturation in epilayer.

axi=0.3

Smoothness parameter for onset of quasi-saturation.

vdc=0.68 V

CB diffusion voltage.

cje=7.3e-14 F

Zero-bias EB depletion capacitance.

vde=0.95 V

EB diffusion voltage.

pe=0.4

EB grading coefficient.

xcje=0.4

Sidewall fraction of EB depletion capacitance.

cbeo=0 F

EB overlap capacitance.

cjc=7.8e-14 F

Zero-bias CB depletion capacitance.

vdcctc=0.68 V

CB diffusion voltage of depletion capacitance.

pc=0.5

CB grading coefficient.

swvchc=0

Switch of Vch for CB depletion capacitance.

swvjunc=0

Switch of Vjunc for collector junction capacitance.

xp=0.35

Constant part of Cjc.

mc=0.5

Coefficient for current modulation of CB depletion capacitance.

xcjc=0.032

Fraction of CB depletion capacitance under the emitter.

cbco=0 F

CB overlap capacitance.

vbrcb=100 V

Breakdown voltage for CB junction leakage.

pbrcb=4 V

Breakdown onset tuning parameter for CB junction leakage.

frevcb=1e+03

Coefficient for limiting CB junction breakdown leakage current.

swjbrcb=0

Switch for breakdown in CB junction leakage.

mtau=1

Non-ideality factor of emitter stored charge.

taue=2e-12 s

Minimum transit time of stored emitter charge.

taub=4.2e-12 s

Transit time of stored base charge.

tepi=4.1e-11 s

Transit time of stored epilayer charge.

taur=5.2e-10 s

Transit time of reverse extrinsic stored base charge.

deg=0 eV

Bandgap difference over the base.

xrec=0

Pre-factor of the recombination part of Ib1.

xqb=0.333

Emitter-fraction of base diffusion charge.

ke=0

Fraction of QE in excess phase shift.

aqbo=0.3

Temperature coefficient of zero-bias base charge.

ae=0

Temperature coefficient of resistivity of the emitter.

ab=1

Temperature coefficient of resistivity of the base.

aepi=2.5

Temperature coefficient of resistivity of the epilayer.

aex=0.62

Temperature coefficient of resistivity of the extrinsic base.

ac=2

Temperature coefficient of resistivity of the collector contact.

acx=1.3

Temperature coefficient of extrinsic reverse base current.

acbl=2

Temperature coefficient of resistivity of the collector buried layer.

vgb=1.17 V

Band-gap voltage of base.

vgc=1.18 V

Band-gap voltage of collector.

vge=1.12 V

Band-gap voltage of emitter.

vgcx=1.12 V

Band-gap voltage of extrinsic collector.

vgj=1.15 V

Band-gap voltage recombination EB junction.

vgzeb=1.15 V

Band-gap voltage at Tref for EB tunneling.

avgeb=0.000473 V/K

Temperature coefficient of band-gap voltage for EB tunneling.

tvgeb=636 K

Temperature coefficient of band-gap voltage for EB tunneling.

vgzcb=1.15 V

Band-gap voltage at Tref for CB tunneling.

avgcb=0.000473 V/K

Temperature coefficient of band-gap voltage for CB tunneling.

tvgcb=636 K

Temperature coefficient of band-gap voltage for CB tunneling.

dvgte=0.05 V

Band-gap voltage difference of emitter stored charge.

dais=0

Fine tuning of temperature dependence of CE saturation current.

tnff=0 /K

Temperature coefficient of nff.

tnfr=0 /K

Temperature coefficient of nfr.

tbavl=0.0005

Temperature scaling parameter of bavl when swavl=1.

af=2

Exponent of Flicker-noise of ideal base current.

afn=2

Exponent of Flicker-noise of non-ideal base current.

kf=2e-11

Flicker-noise coefficient of ideal base current.

kfn=2e-11

Flicker-noise coefficient of non-ideal base current.

kavl=0

Switch for white noise contribution due to avalanche.

kc=0

Switch for RF correlation noise model selection.

ftaun=0

Fraction of noise transit time to total transit time.

rth=300 K/W

Thermal resistance.

cth=3e-09 J/K

Thermal capacitance.

ath=0

Temperature coefficient of thermal resistance.

isibrel=0 A

Saturation current of base current for reliability simulation.

nfibrel=2

Non-ideality factor of base current for reliability simulation.

gmin=1e-13

Minimum conductance.

imax=1000 A

Explosion current.

vexlim=400

Upper limit of exp() function argument for convergence.

tnom (degC)

Parameters measurement temperature.

tr (degC)

Alias of tnom.

compatible=spectre

Encourage device equations to be compatible with a foreign simulator.
Possible values are spectre, spice2, spice3, cdsspice, spiceplus, eldo, sspice, mica, and pspice.

tempeff (C)

Effective temperature for a single device.

meff

Effective multiplicity factor (m-factor).

jtype

type: +1=npn and -1=pnp.

ic (A)

External DC collector current.

ib (A)

External DC base current.

betadc

External DC current gain Ic/Ib.

ie (A)

External DC emitter current.

vbe (V)

External base-emitter bias.

vce (V)

External collector-emitter bias.

vbc (V)

External base-collector bias.

vb2e1 (V)

Internal base-emitter bias.

vb2c2 (V)

Internal base-collector bias.

vb2c1 (V)

Internal base-collector bias including epilayer.

vb1c1 (V)

External base-collector bias without contact resistances.

vc4c1 (V)

Bias over intrinsic buried layer.

vc3c4 (V)

Bias over extrinsic buried layer.

ve1e (V)

Bias over emitter resistance.

in (A)

Main current.

ic1c2 (A)

Epilayer current.

ib1b2 (A)

Pinched-base current.

ib1 (A)

Ideal forward base current.

ib1s (A)

Ideal side-wall base current.

ib2s (A)

Non-ideal side-wall base current.

ibrel (A)

Additional non-ideal base current for reliability simulation.

izteb (A)

Zener tunneling current in the emitter base junction.

iztcb (A)

Zener tunneling current in the collector base junction.

ib2 (A)

Non-ideal forward base current.

ib3 (A)

Non-ideal reverse base current.

iavl (A)

Avalanche current.

iex (A)

Extrinsic reverse base current.

xiex (A)

Extrinsic reverse base current.

ire (A)

Current through emitter resistance.

irbc (A)

Current through constant base resistance.

ircblx (A)

Current through extrinsic buried layer resistance.

ircbli (A)

Current through intrinsic buried layer resistance.

ircc (A)

Current through collector contact resistance.

qe (coul)

Emitter charge or emitter neutral charge.

qte (coul)

Base-emitter depletion charge.

sqte (coul)

Sidewall base-emitter depletion charge.

qbe (coul)

Base-emitter diffusion charge.

qbc (coul)

Base_collector diffusion charge.

qtc (coul)

Base-collector depletion charge.

qepi (coul)

Epilayer diffusion charge.

qb1b2 (coul)

ac current crowding charge.

qtex (coul)

Extrinsic base-collector depletion charge.

xqtex (coul)

Extrinsic base-collector depletion charge.

qex (coul)

Extrinsic base-collector diffusion charge.

xqex (coul)

Extrinsic base-collector diffusion charge.

gx (S)

Forward transconductance.

gy (S)

Reverse transconductance.

gz (S)

Reverse transconductance.

sgpi (S)

Conductance sidewall b-e junction.

gpix (S)

Conductance floor b-e junction.

gpiy (S)

Early effect on recombination base current.

gpiz (S)

Early effect on recombination base current.

gmux (S)

Early effect on avalanche current limiting.

gmuy (S)

Conductance of avalanche current.

gmuz (S)

Conductance of avalanche current.

gmuex (S)

Conductance of extrinsic b-c junction.

xgmuex (S)

Conductance of extrinsic b-c junction.

grcvy (S)

Conductance of epilayer current.

grcvz (S)

Conductance of epilayer current.

rb_v (Ω)

Variable base resistance.

grbvx (S)

Early effect on variable base resistance.

grbvy (S)

Early effect on variable base resistance.

grbvz (S)

Early effect on variable base resistance.

r_e (Ω)

Emitter resistance.

rb_c (Ω)

Constant base resistance.

rc_c (Ω)

Collector contact resistance.

rc_blx (Ω)

Extrinsic buried layer resistance.

rc_bli (Ω)

Intrinsic buried layer resistance.

scbe (F)

Capacitance sidewall b-e junction.

cbex (F)

Capacitance floor b-e junction.

cbey (F)

Early effect on b-e diffusion charge.

cbez (F)

Early effect on b-e diffusion charge.

cbcx (F)

Early effect on b-c diffusion charge.

cbcy (F)

Capacitance floor b-c junction.

cbcz (F)

Capacitance floor b-c junction.

cbcex (F)

Capacitance extrinsic b-c junction.

xcbcex (F)

Capacitance extrinsic b-c junction.

cb1b2 (F)

Capacitance AC current crowding.

cb1b2x (F)

Cross-capacitance AC current crowding.

cb1b2y (F)

Cross-capacitance AC current crowding.

cb1b2z (F)

Cross-capacitance AC current crowding.

gm (S)

transconductance.

beta

Current amplification.

gout (S)

Output conductance.

gmu (S)

Feedback transconductance.

rb (Ω)

Base resistance.

rc (Ω)

Collector resistance.

cbe (F)

Base-emitter capacitance.

cbc (F)

Base-collector capacitance.

ft (Hz)

Good approximation for cut-off frequency.

iqs (A)

Current at onset of quasi-saturation.

xiwepi

Thickness of injection layer normalized to epi layer width.

vb2c2star (V)

Physical value of internal base-collector bias.

pdiss (W)

Dissipation.

tk (K)

Actual temperature.

pwr (W)

Power.