Contents
Related Documents
Typographic and Syntax Conventions
Current Sources
Linear Current Controlled Current Source (cccs)
Sample Instance Statement
Instance Syntax
Instance Parameters
Output Parameters
Linear Current Controlled Voltage Source (ccvs)
Sample Instance Statement
Instance Syntax
Instance Parameters
Output Parameters
Independent Current Source (isource)
Sample Instance Statement
Instance Syntax
Instance Parameters
PWL Type Waveform
Bit Type Waveform
PRBS Type Waveform
LFSR Modes
Triggering Mode
Jitter
Noise of the source
Output Parameters
Operating-Point Parameters
Polynomial Current Controlled Current Source (pcccs)
Sample Instance Statement
Instance Syntax
Instance Parameters
Operating-Point Parameters
Polynomial Voltage Controlled Current Source (pvccs)
Instance Syntax
Instance Parameters
Operating-Point Parameters
s-Domain Linear Current Controlled Current Source (scccs)
Sample Instance Statement
Instance Syntax
Instance Parameters
Operating-Point Parameters
s-Domain Linear Voltage Controlled Current Source (svccs)
Sample Instance Statement
Instance Syntax
Instance Parameters
Operating-Point Parameters
Linear Voltage Controlled Current Source (vccs)
Sample Instance Statement
Instance Syntax
Instance Parameters
Output Parameters
Operating-Point Parameters
z-Domain Linear Current Controlled Current Source (zcccs)
Notes on gain and gainfactor
Sample Instance Statement
Instance Syntax
Instance Parameters
Operating-Point Parameters
z-Domain Linear Voltage Controlled Current Source (zvccs)
Instance Syntax
Instance Parameters
Operating-Point Parameters
Voltage Sources
Polynomial Current Controlled Voltage Source (pccvs)
Sample Instance Statement
Instance Syntax
Instance Parameters
Operating-Point Parameters
Polynomial Voltage Controlled Voltage Source (pvcvs)
Sample Instance Statement
Instance Syntax
Instance Parameters
Operating-Point Parameters
s-Domain Voltage Controlled Voltage Source (svcvs)
Notes on gain and gainfactor
Sample Instance Statement
Instance Syntax
Instance Parameters
Operating-Point Parameters
Linear Voltage Controlled Voltage Source (vcvs)
Sample Instance Statement
Instance Syntax
Instance Parameters
Output Parameters
Operating-Point Parameters
Independent Voltage Source (vsource)
Sample Instance Statement
Instance Syntax
Instance Parameters
Output Parameters
Operating-Point Parameters
z-Domain Current Controlled Voltage Source (zccvs)
Sample Instance Statement
Instance Syntax
Instance Parameters
Operating-Point Parameters
z-Domain Voltage Controlled Voltage Source (zvcvs)
Instance Syntax
Instance Parameters
Operating-Point Parameters
Behavioral Source (bsource)
Sample Instance Statement
Multiplicity factor
Temperature Parameters
Clipping Parameters
Noise Parameters
DC Mismatch Parameters
Other Parameters
Instance Parameters
Mathematical Definitions
Noise Model for bsource
Temperature Effect on bsource
Independent Resistive Source (port)
Sample Instance Statement
Instance Syntax
Instance Parameters
PWL Type Waveform
Bit Type Waveform
PRBS Type Waveform
LFSR Modes:
Triggering Mode:
Jitter:
Linear N Port (nport)
Sample Instance Statement
Sample Model Statement
Synopsis
Model Synopsis
Instance Parameters
Passivity checking and enforcement parameters
Model Syntax
Model Parameters
Important note about spline and linear interpolation parameters
Current Probe (iprobe)
Sample Instance Statement
Instance Syntax
Operating-Point Parameters
Circuit Reduced Order Model (cktrom)
Sample Instance Statement
Instance Syntax
Instance Parameters
Operating-Point Parameters
Analog-to-Logic Converter (a2d)
device checker (assert)
Instance Syntax
Instance Parameters
Logic-to-Analog Converter (d2a)
Sample Instance Statement
Instance Syntax
Instance Parameters
Ideal Switch (switch)
Sample Instance Statement
Instance Syntax
Instance Parameters
Output Parameters
Ratiometric Fourier Analyzer (fourier)
Sample Instance Statement
Sample Model Statement
Instance Syntax
Instance Parameters
Model Syntax
Model Parameters
IBIS I/O buffer (ibis_buffer)
Driver Equations
Receiver Equations
Switching Coefficients
Sample Instance Statement
Sample Model Statement
Instance Syntax
Instance Parameters
Model Syntax
Model Parameters
Two Terminal Resistor (resistor)
Two Terminal Resistor
Wire RC Model
Scaling Effects
Component Statements
Sample Instance Statement
Sample Model Statement
Sample behavior Statement
Instance Syntax
Instance Parameters
Model Syntax
Model Parameters
Output Parameters
Operating-Point Parameters
Physical Resistor (phy_res)
Thermal Noise
Shot Noise for the Junctions
Flicker Noise for the Resistor
Flicker Noise for the Junctions
Sample Instance Statement
Sample Model Statement
Instance Syntax
Instance Parameters
Model Syntax
Model Parameters
Output Parameters
Operating-Point Parameters
R2 Model (r2)
Usage
Equivalent Circuit
Bias Dependence
Geometry Dependence
Temperature Dependence
Noise
Description and Details
Component Statements
Instance Syntax
Instance Parameters
Model Syntax
Model Parameters
Operating-Point Parameters
Fractional Impedance/Admittance Pole (fracpole)
Instance Syntax
Instance Parameters
Model Syntax
Model Parameters
Operating-Point Parameters
Two-Terminal Capacitor (capacitor)
Sample Instance Statement
Sample Model Statement
Sample Behavior Statement
Instance Syntax
Instance Parameters
Model Syntax
Model Parameters
Output Parameters
Two Terminal Capacitor with the specified Q factor (capq)
Description
Instance Syntax
Instance Parameters
Model Syntax
Interconnect Capacitance (intcap)
Instance Syntax
Instance Parameters
Model Syntax
Model Parameters
Output Parameters
Junction Capacitor (juncap)
Instance Syntax
Instance Parameters
Model Syntax
Model Parameters
Output Parameters
Operating-Point Parameters
JUNCAP2 Model (juncap200)
Instance Syntax
Instance Parameters
Model Syntax
Model Parameters
Operating-Point Parameters
Junction Capacitor (juncap_eldo)
Sample Instance Statement
Sample Model Statement
Instance Syntax
Instance Parameters
Model Syntax
Model Parameters
Output Parameters
Operating-Point Parameters
Two Terminal Inductor (inductor)
Sample Instance Statement
Sample Model Statement
Sample Behavior Statement
Instance Syntax
Instance Parameters
Model Syntax
Model Parameters
Output Parameters
Operating-Point Parameters
Mutual Inductor (mutual_inductor)
Sample Instance Statement with Two Inductors
Instance Syntax
Instance Parameters
Magnetic Core with Hysteresis (core)
Sample Instance Statement
Sample Model Statement
Instance Syntax
Instance Parameters
Model Syntax
Model Parameters
Winding for Magnetic Core (winding)
Sample Instance Statement
Instance Syntax
Instance Parameters
Linear Inductance, Reluctance, Resistance, and Capacitance Matrix (rlck_matrix)
Sample Instance Statement
Instance Syntax
Instance Parameters
Multiplication Factor (m)
Scaling Factors (scale and scalem)
imelt and imax
SPICE Compatibility Flag (compatible)
Device Regions
Level-1 Model
DC Current
Junction Capacitance
Peripheral Junction Capacitance
Diffusion Capacitance
Total Capacitance
Breakdown Current
Temperature Effect
Noise Model
Series Resistance Thermal Noise
Diode Shot and Flicker Noise
Scaling Effects
Level-2 Model
DC Current
Linear Capacitance
Scaling Effects
Level-3 Model
Component Statements
Sample Instance Statement
Sample Model Statement
Instance Definition
Instance Parameters
Model Definition
Model Parameters
Output Parameters
Operating-Point Parameters
Device Regions
DC Current
Nonlinear Base Resistance
Nonlinear Collector Resistance (If rcv Is Specified)
Collector Leakage Current
Substrate Leakage Current
Charge and Capacitance
Excess Phase
Temperature Effect
Energy Gap
Saturation Current
Current Gains (Bf, Br)
Junction Capacitors (cjc, cje, and cjs)
Parasitic Resistors (rb, rc, and re)
Noise Model
Base Resistance Thermal Noise
Collector Resistance Thermal Noise
Emitter Resistance Thermal Noise
Collector Shot Noise Source
Base Shot, Flicker, and Burst Noise Sources
Scaling Effects
Sample Instance Statement:
Sample Model Statement:
Instance Definition
Instance Parameters
Model Definition
Model Parameters
Shrink Parameters
Output Parameters
Operating Point Parameters
Spectre HICUM Model Compared to Public HICUM Model
Self-Heating
Parameter flcomp
Model Description
DC Equations
Charge and Capacitance Equations
Noise Model
Temperature Effect
Self-Heating
NQS effect
Lateral NQS
Vertical NQS
HiCUM Model Version 2.2
Temperature Dependent Bandgap Voltage
Transfer current
Base Currents
Depletion Capacitances and Charges
Minority Charge
Temperature Dependence
Base-emitter Tunnelling Component
Parasitic Base-Emitter Capacitance Partitioning
Substrate Transistor
HiCUM Model Version 2.3
Improvements in the model equations
HiCUM Model Version 2.31
Improvements in Model Equations
HiCUM Model Version 2.32
HiCUM Model Version 2.33
HiCUM Model Version 2.34
HiCUM Model Version 2.40
Improvised Strong Collector Avalanche Formula
Conditional Statement for Weak Avalanche
Backward Compatibility and Application
Improvised Vciei Calculation
Scaling Effects
Component Statements
Model Version Updates
Version 1.2:
Version 1.3
Version 1.3.1
Version 1.3.2
Equivalent Circuit
Charge formulation of the internal transistor
Derivation of the simplified transfer current equation
Static Base Current Components
Depletion Charges And Capacitances
Minority Charges And Capacitances
Low current densities
Medium and high current densities
Series Resistance
Internal base resistance
External series resistances
Temperature Dependence
Noise Model
DC Characteristics
Charge Storage Elements
Series Resistance
Temperature Effects
Noise Model
Other Effects
Models and Equations in Version 1.30
Improved model formulations for the HICUM/L0 transfer current
Component Statements
Instance Definition
Instance Parameters
Model Definition
Model Parameters
Output Parameters
Operating Point Parameters
VBIC 1.1
DC Current
Charge Equations
Excess Phase
Small Signal Parameters
Temperature Equations
Noise Equations
VBIC 1.2
DC Current
Charge Equations
Temperature Equations
Scaling Effects
Component Statements
Sample Instance Statement
Sample Model Statement
Instance Definition
Instance Parameters
Model Definition
Model Parameters
Operating-Point Parameters
DC Current
Junction Capacitance
Total Charge
Thermal Current Equations
Temperature Equations
Scaling Effects
Component Statements
Component Statements
Drain Current for the Subthreshold Region
Drain Current for the Triode Region
Drain Current for the Saturation Region
Substrate Leakage Currents
Gate Junction Currents
Gate Junction Capacitance
Temperature Effect
Noise Model
Scaling Effects
Component Statements
Diode Level 500 (dio500)
Lateral PNP Transistor (bjt301)
Lateral PNP Transistor (bjt500)
Lateral PNP Transistor (bjt500t)
Vertical NPN/PNP Transistor (bjt503)
Compact Bipolar-Transistor Model (bjt504)
Compact Bipolar-Transistor Model (bjt504t)
Compact Bipolar-Transistor Model (bjt505)
Compact Bipolar-Transistor Model (bjt505t)
Compact Bipolar-Transistor Model (bjtd504)
Compact Bipolar-Transistor Model (bjtd504t)
Compact Bipolar-Transistor Model (bjtd505)
Compact Bipolar-Transistor Model (bjtd505t)
Compact Bipolar-Transistor Model (bjtd3500)
Compact Bipolar-Transistor Model (bjtd3500t)
JFETIDG Model (jfetidg)
Terminology and Notation
Model Version
Component Statements
Long Channel JFET/MOSFET Model (mos30)
MOS Model 40, Level 40 (mos40t)
Long Channel JFET/MOSFET Model (mos3002)
Compact MOS-Transistor Model (mos705)
Compact MOS-Transistor Model (mos902)
Compact MOS-Transistor Model (mos903)
Compact MOS-Transistor Distortion Model (mos1000)
Compact MOS-Transistor Distortion Model (mos1100)
Compact MOS-Transistor Distortion Model (mos1100e)
MOS Model 11, Level 1101 (mos11010)
MOS Model 11, Level 1101 (mos11010t)
MOS Model 11, Level 1101 (mos11011)
MOS Model 11, Level 1101 (mos11011t)
MOS Model 11, Level 1101 (mos1101e)
MOS Model 11, Level 1101 (mos1101et)
MOS Model 11, Level 1102 (mos11020)
MOS Model 11, Level 1102 (mos11020t)
MOS Model 11, Level 1102 (mos11021)
MOS Model 11, Level 1102 (mos11021t)
MOS Model 11, Level 1102 (mos1102e)
MOS Model 11, Level 1102 (mos1102et)
Lateral Double-diffused MOS Model (MOS Model Level 2001) (mos2001)
Lateral Double-diffused MOS Model (MOS Model Level 2001) (mos2001e)
Lateral Double-diffused MOS Model (MOS Model Level 2001) (mos2001et)
Lateral Double-diffused MOS Model (MOS Model Level 2001) (mos2001t)
Lateral Double-diffused MOS Model (MOS Model Level 2002) (mos2002)
Lateral Double-diffused MOS Model (MOS Model Level 2002) (mos2002e)
Lateral Double-diffused MOS Model (MOS Model Level 2002) (mos2002et)
Lateral Double-diffused MOS Model (MOS Model Level 2002) (mos2002t)
MOS Model 31, Level 3100 (mos3100)
MOS Model 31, Level 3100 (mos3100t)
Parameters Common to BSIM1 and BSIM2 Models
Channel Width and Length
Parameters Common to Levels 1-3 Only
Source/Drain Bulk Junction Models
Junction Leakage Current
Bulk-Junction Bottom (Sidewall) Capacitance
Drain and Source Area
Drain and Source Perimeters
Drain and Source Squares
Junction Saturation Current
Junction Capacitance
Drain and Source Parasitic Resistance
Temperature Effect on Model Parameters
Mobility and Transconductance Parameters
Energy Band Gap
Surface Potential
Built-in Voltage of Source/Drain Junctions
Junction Leakage Currents
Junction Capacitances
Channel Length Modulation
Threshold Voltage
Drain and Source Parasitic Resistance
Critical Field
Noise Model
Drain Resistance Thermal Noise
Source Resistance Thermal Noise
Channel Thermal and Flicker Noise
Modified Meyer Model
Accumulation Region
Subthreshold Region
Saturation Region
Triode Region
Yang-Chatterjee Model
Accumulation Region
Subthreshold Region
Saturation Region
Triode Region
BSIM Charge Model with 0/100 Partitioning (xpart=1)
BSIM Charge Model with 40/60 Partitioning (xpart=0)
Accumulation Region
Subthreshold Region
Saturation Region
Triode Region
BSIM Charge Model with 50/50 Partitioning (xpart=0.5)
Accumulation Region
Subthreshold Region
Saturation Region
Triode Region
Scaling Effects
Channel Width and Length
Threshold Voltage
Drain Saturation Voltage
Drain Current for the Subthreshold Region
Drain Current for the Triode Region
Drain Current for the Saturation Region
Drain Saturation Voltage (Modified Level-1 Model)
Drain Current for the Triode Region (Modified Level-1 Model)
Drain Current for the Saturation Region (Modified Level-1 Model)
Substrate Current
Scaling Effects
Component Statements
Channel Width and Length
Threshold Voltage
Drain Saturation Voltage
Drain Current for the Subthreshold Region
Drain Current for the Triode Region
Drain Current for the Saturation Region
Substrate Current
Scaling Effects
Component Statements
Channel Width and Length
Threshold Voltage
Drain Saturation Voltage
Drain Current for the Subthreshold Region
Drain Current for the Triode Region
Drain Current for the Saturation Region
Substrate Current
Scaling Effects
Component Statements
Parameter Calculation
Drain Current Model
Scaling Effects
Component Statements
Parameter Calculation
Drain Current Model
Drain Current for the Subthreshold Region
Drain Current for the Triode Region
Scaling Effects
Component Statements
Threshold Voltage
Subthreshold Current
Drain Saturation Voltage
Drain Current for the Saturation Region
Default Model Parameter Value Calculation
Scaling Effects
New Features in BSIM3 Version 3.2.4
Component Statements
Spectre-Specific Parameters
Instance Parameters
Model Parameters
Drain and Source Area
Drain and Source Perimeters
Drain and Source Parasitic Resistance
I-V Model
Threshold Voltage
Effective Vgs-Vthc
Mobility
Drain Saturation Voltage
Effective Vds
Drain Current Expression
Substrate Current
Junction Saturation Current
Polysilicon Depletion Effect
Effective Channel Length and Width
Drain/Source Resistance
Temperature Effects
Capacitance Model
Dimension Dependence
Junction Capacitance
Overlap Capacitance (for NMOS)
Intrinsic Charges
Intrinsic Capacitances (with Body Bias and DIBL)
Nonquasi-static (NQS) Model
SPICE3 Junction Diode Model
Flicker Noise
For noimod = 1 and 4
For noimod = 2 and 3
Channel Thermal Noise
Default Model Parameter Value Calculation
Gate Leak Currents
Instance Parameters
Model Parameters
Leak current between Gate and Drain
Leak current between Gate and Source
Igs and Igd
Igb
LOD Model
Stress Effect
Well Proximity Effect
Differences between BSIM3v3 Subversions
Parameter Differences between BSIM3v3 Levels
Scaling Effects (BSIM3v3)
Instance Parameters
Component Statements
Binning Parameters
Instance
Instance syntax
Model
Model syntax
Auto Model Selection
Equivalent Circuit
Device Regions
Global Control Options
JUNCAP Model
TMI 1.0 Model
TMI 2.0 Model
Flexible device topology with customized model formulations
Support for reliability aging modeling and analysis for simulators with and without aging capability
Model Version Update
Version 4.30
Version 4.40
Version 4.50
Version 4.60
Version 4.61
Version 4.62
Version 4.63
Version 4.64
Version 4.65
Version 4.70
Version 4.80
Version 4.81
Model Equations
Effective Oxide Thickness, Channel Length and Channel Width
Threshold Voltage Model
Channel Charge and Subthreshold Swing Models
Gate Direct Tunneling Current Model
Drain Current Model
Body Current Model
Capacitance Model
High Speed/RF Models
Noise Models
Asymmetric MOS Junction Diode Models
Layout Dependent Parasitics Models
Temperature Effects Models
Stress Effects Models
Well Proximity Effect Model
TMIBSIM4 Model (tmibsim4)
Models and Equations in Version Updates
BSIM4 Version 4
BSIM4 Version 5
Mobility Model
Scalable Substrate Resistance Model
Temperature Dependence for VOFF, VFBSDOFF
New Temperature Mode (TempMod = 2)
DELVTO: An Instance Parameter
Well-Proximity Effect Modeling
Gate Current Vbs Dependence
BSIM4 Version 6
GISL and GIDL Leakage Module
Junction Diode I-V
Gate Tunneling Current
Mobility Model
Improvement to NOIMOD = 2
BSIM4 Version 6.1
C-V Model
New Material Model
Improved Mobility Model
Improved GIDL/GISL Model
BSIM4 Version 6.2
Width Dependent TAT Model
High K Mobility
BSIM4 Version 7.0
GIDL/GISL Model
DIBL/Rout Model
Temperature Dependence of Subthreshold Leakage Current
New Model Selector for MTRLMOD=0 and MTRLMOD=1 Compatibility
Enhanced Thermal Noise Model
Mobility Models
Component Statements
Instance
Instance Syntax
Model
Model Syntax
TMI Support
OMI Support
Version Update and Enhancements
Version 107 Enhancements
Version 106.2 Enhancements
Version 6.1.1 Enhancements
Model Equations
Effective Channel Length and Width
Binning Calculations
Global Geometrical Scaling
Terminal Voltages
Pinch-Off Potential and Normalized Charge Calculation
Short Channel Effects
Drain Saturation Voltage
Mobility Degradation with Vertical Field
Parasitic Series Resistance
Output Conductance
Velocity Saturation
Effective Mobility
Drain Current Model
Impact Ionization Model
GIDL/GISL Current Model
Gate Tunneling Current Model
Equations for Tunneling Currents
Gate Resistance and Body Resistance Model
Substrate Resistance Network
Noise Modeling
Self Heating Model
Asymmetric MOS Junction Diode Models
Layout Dependent Parasitic Models
Temperature Dependence Models
Stress Effect Model Development
Well Proximity Effect Model
C-V Model
Component Statements for BSIM6
Instance Parameters
Model Definition
Model Parameters
Output Parameters
Model Usage
Instance Syntax
Model Syntax
Version and Master Name
Sample Model Statements
History and Development
PSP100
PSP101 (SiMKit2.3)
PSP102.0 (SiMKit2.3.2)
PSP102.1 (SiMKit2.4)
PSP102.1.1 (SiMKit2.5)
PSP102.2
PSP102.2.1 (SiMKit4.0.1)
PSP102.3 (SiMKit3.1.2)
PSP102.3.2 (SiMKit3.2)
PSP102.3.3 (SiMKit3.3)
PSP102.3.4 (SiMKit3.4)
PSP102.4 (SiMKit4.01)
PSP102.5
Structure of PSP102
Geometrical Scaling and Stress Model for Intrinsic MOSFET
Geometrical Scaling Rules
Calculation of Geometry-Dependent Parameters using Physical Scaling Rules
Parameter Modification due to Stress Effects
Model Equations
Calculation of Internal Parameters (including Temperature Scaling)
Conditioning of Terminal Voltages
Bias-Dependent Body Factor
Lateral Gradient Factor
Surface Potential at Source Side and Related Variables
Drain Saturation Voltage
Surface Potential at Drain Side and Related Variables
Mid-Point Surface Potential and Related Variables
Polysilicon Depletion
Potential Mid-Point Inversion Charge and Related Variables
Series Resistance
Mobility Reduction
Drain-Source Channel Current
Impact Ionization or Weak-Avalanche
Gate Current
Noise Model
Non-Quasi-Static (NQS) RF Model
Parasitics Circuit
Additional NQS and RF Parameters
Geometrical Scaling Rules for the NQS RF Model
Equations for the NQS RF Model
Component Statements for PSP102 Models
PSP MOSFET Model (PSP102)
PSP MOSFET Model (psp1020)
PSP MOSFET Model (psp1021)
PSP local MOSFET Model (psp102e)
PSP NQS MOSFET Model (pspnqs1020)
PSP NQS MOSFET Model (pspnqs1021)
PSP NQS local MOSFET Model (pspnqs102e)
Model Usage
Instance Syntax
Model Syntax
Model History and Development
PSP103.0 (SiMKit3.2)
PSP103.1 (SiMKit3.3)
PSP103.1.1 (SiMKit3.4)
PSP103.2 (SiMKit4.0.1)
PSP103.3
PSP103.4
PSP103.5
PSP103.6
PSP103.7
Reference
Model Description
Geometry Scaling and Stress Model for Intrinsic MOSFET
PSP 103 Model Equations
Current Model
Charge Model
Noise Model
Self Heating
Non-quasi-static RF model
PSP NQS MOSFET Model (pspnqs103)
Device Structure
Model Equations
RC Circuit Model for Inversion Charge
Parameter Initializing
Static Evaluations
Calculation of Surface Potential at the Channel Side
Calculation of Surface Potential at the Overlap Regions
Surface Potential Without Poly Effect
Surface Potential With Poly Effect
Static Inversion Charge Calculations
Time-Dependent Silicon Surface Potential Without Poly Effect
Time-Dependent Poly Surface Potential Calculation Correction
Quantum Mechanical Corrections
Accumulation Resistance Bias Dependence
Calculation of Gate Tunneling Current
Gate Tunneling Current
Terminal Currents
Terminal Charges
Noise
Parameter Extraction
Auxiliary Equations
Model Version Updates
Version 1.2.0
Version 1.3.0
Model Usage
Instance Syntax
Model Syntax
Component Statements
Coherence of Static and Dynamic Models
Bulk Reference and Symmetry
Equivalent Circuit
Model Equations
Static Intrinsic Model
Quasi-static Model
Nonquasi-static (NQS) Model
Intrinsic Noise Model
Model Usage
Instance Syntax
Model Syntax
Component Statements
Instance Parameters
Model Parameters
Modes
Model Equations
Instance Level
Effective Geometry
Matching
Long and wide channel correction of VTO and GAMMA
Parameter width and length scaling
Reverse short channel effect (RSCE)
Inverse narrow width effect (INWE)
Mobility Scaling
Instance level parameters
Temperature scaling
Normalizing
Slope factor nQ0
Quantum mechanic effect
Normalization factor for charges
Normalization of potentials
Charge sharing effect
Flat-band voltage
Effective gate-voltage
Pinch-off surface potential
Pinch-off voltage
Velocity saturation
Normalized drain inversion charge
Slope factor nv
Drain induced barrier lowering effect
Normalized source inversion charge
Slope factor nQ
Charge model
Mobility effects
Specific current
Denormalizing
Edge Conductance
Normalization Factors (Edge Device)
Scaling - Normalizing
Normalized Inversion Charges (Edge Device)
Normalized Currents (Edge Device)
Drain Current (Edge Device)
Edge Device: Charge Model
Overlap Capacitances
Denormalizing (Overlap)
Fringing Capacitance
Bias-Independent Overlap Capacitances
Gate Induced Drain and Source Current
Gate Current
Overlap Gate Current
Impact Ionization Current
Noise
Thermal Noise
Flicker Noise
Induced Gate Noise
Shot and Flicker Gate Noise
Diodes
Temperature Dependence
Area and Perimeter
Junction Current
Junction Capacitance
External Resistors (Gate, Series, Bulk)
Temperature Dependence
Model Usage
Instance Syntax
Model Syntax
Component Statements
Device ekv3_nqs (ekv3_nqs)
Device ekv3_r4 (ekv3_r4)
Device ekv3_rf (ekv3_rf)
Device ekv3_s (ekv3_s)
Device Structure
Equivalent Circuit
Device Regions
Global Control Options
Model Equations
DC current
Body current
Leakage current
Charge and Capacitance
Selfheating
RF model
Noise
Model Version Updates
Version 3.2
Version 4.0
Version 4.1
Version 4.2
Version 4.3
Version 4.31
Version 4.4
Version 4.5
Version 4.6.0
Version 4.6.1
Special Bugfixes
Rth thermal resistance
Cth thermal capacity
ExpVgst bug handling
Temperature node tolerance and quantity
Iii (substrate current)
Bugfix control methodology
TMI Support
Model Usage
Instance Syntax
Model Syntax
Component Statements
Instance Parameters
Model Parameters
Model Concepts
Model Usage
Instance Syntax
Model Syntax
Model Version and Development
Version Update and Enhancement
Version 3.2.1 Enhancement
Version 3.1.1 Enhancement
Version 3.1.0 Enhancement
Version 3.0.0 Enhancement
Version 2.91 Enhancement
Version 2.90 Enhancement
Version 2.80 Enhancement
Version 2.70 Enhancement
Version 2.61 Enhancement
Version 2.60 Enhancement
Reference
Model Equations
Component Statements
Model Concepts
Model Usage
Instance Syntax
Model Syntax
Model Version and Development
Version Update and Enhancement
Version 2.41 Enhancement
Version 2.40 Enhancement
Version 2.33 Enhancement
Version 2.32 Enhancement
Version 2.31 Enhancement
Version 2.30 Enhancement
Version 2.20 Enhancement
Version 1.24 Enhancement
Version 2.10 Enhancement
Version 2.01 Enhancement
Version 1.23 Enhancement
Version 2.00 Enhancement
Version 1.22 Enhancement
Version 1.12 Enhancement
Version 1.21 Enhancement
Version 1.20 Enhancement
Reference
Model Equations
Component Statements
Model Concepts
Model Usage
Version Update and Enhancements
Version 1.50 Enhancements
Version 1.40 Enhancements
Version 1.30 Enhancements
Reference
Model Equations
Component Statements
Model Concepts
Model Usage
Instance Syntax
Model Syntax
Sample Model Statement
Component Statements
Model Usage
Instance Syntax
Model Syntax
Component Statements
Instance Parameters
Model Parameters
Equivalent Circuit
Core Model
Lateral Gradient Factor
Effective Drain-Source Voltage
Surface Potential
Quantum Mechanical Corrections
Polysilicon Depletion
Drain Current
Intrinsic Charges
Bias-Dependent Body Factor
Extrinsic Model
Charge Model
Gate Current Model
Substrate Current Model
Total Terminal Currents
Noise Model
Gate Induced Drain/Source Leakage Current Model
Scaling Equations
Temperature Dependence (-55°°°°°°
Parameter Descriptions
New Parameters for SPMOS Version 34
Parameters with Different Default Values for SPMOS Version 34
Model Equations
Drain Current for the Subthreshold Region
Drain Current for the Triode Region
Drain Current for the Saturation Region
Gate Junction Currents
Gate Junction Capacitance
Temperature Effect
Noise Model
Scaling Effects
Component Statements
Instance
Model
Circuit Diagrams
TOM2
TOM3
Model Equations
Channel Current Ids
TOM2
TOM3/TOM3V1
Gate Current Ig
TOM2
TOM3/TOM3V1
Gate Capacitance
TOM2
TOM3/TOM3V1
TOM3V1
Temperature Effect
TOM2
TOM3/TOM3V1
Noise Model
Source Resistance Thermal Noise
Drain Resistance Thermal Noise
Channel Conductance Thermal and Flicker Noise
Gate Resistance Thermal Noise (TOM3V1)
Channel Conductance Thermal and Flicker Noise (TOM3V1)
Scaling Effects
New features from TOM3 to TOM3v1
Model Usage (tom2)
Instance Syntax
Model Syntax
Component Statements
GaAs MESFET (tom3)
GaAs MESFET (TOM3V1)
Poly-Si TFT Model (PSITFT)
Equivalent Circuit
Model Features
Channel Width and Length
Drain and Source Parasitic Resistance
Threshold Voltage
Effective Mobility
Unified Electron Sheet Charge Density Per Unit Area
Channel Conductance
Saturation Voltage
Channel Current
Kink Effect Current
Subthreshold Leakage Current
Parasitic Resistance Dependence
Gate-Drain/Source Resistance
Temperature Dependence
Capacitance
ACM Option
Scaling Effects
Component Statements
Amorphous-Si TFT Model (ATFT)
Equivalent Circuit
Model Features
Drain Current
Drain and Source Parasitic Resistance
Temperature Dependence
Capacitance
Component Statements
Usage
Bias Dependence of Resistor Body Current
Bias Dependence of Parasitics
Geometry Dependence
Temperature Dependence
Noise
Operating Point Information
Statistical Variation
Notes on Parameter Extraction
Reference
Component Statements
Model Concepts
Component Statements
Instance Syntax
Model Syntax
Reference
Model Equations
Microstrip Line (msline)
Instance Syntax
Instance Parameters
Multi-Conductor Transmission Line (mtline)
Constant RLGC Matrices
Skin Effect and Dielectric Loss
Frequency-Dependent RLGC Data
2-D Field Solver Information
Line Configuration (linetype)
Model Type (modeltype)
Ground Plane (numgnd)
Dielectric Layer (numlayer)
Signal Line
RLGC Reuse
Stackup-based Input of Cross-section Geometry and Material Properties
S-Parameter Data File
Old TLINE Parameters
Sample Instance Statement
Sample Model Statement
Rational Fitting
Modeling Frequency Dependent Effects
Delay Line (delay)
Related Topics
Four Terminal Relay (relay)
Related Topics
Linear Two Winding Ideal Transformer (transformer)
Related Topics
High-Voltage MOSFET Model (hvmos)
MISN Field Effect Transistor (misnan)
Diffusion Resistor Model (rdiff)
Model Overview
TMI Support
OMI Support
BSIM-CMG Model Equations
Bias Independent Calculations
Terminal Voltages
Short Channel Effects
Surface Potential Calculation
Drain Saturation Voltage
Average Potential and Charge
Quantum Mechanical Effects
Mobility Degradation and Series Resistance
Lateral Non-uniform Doping Model
Body Effect Model
Output Conductance
Velocity Saturation
Drain Current Model
Intrinsic Capacitance Model
Parasitic resistances and capacitance models
Impact Ionization and GIDL/GISL Model
Gate Tunneling Current
Non Quasi-static Models
Generation-recombination Component
Junction Current and Capacitances
Self-heating Model
Noise Models
Model Version Update
Version 105.02 Update
Version 105.03 update
Version 105.031 update
Version 105.04 update
Version 106.0.0 update
Version 106.1.0 update
Version 107.0.0 update
Version 108.0.0 update
Version 110.0.0 update
Version 111.0.0 update
Component tatements
Synopsis
Model Synopsis
Model Overview
BSIM-IMG Model Equations
Bias Independent Calculations
Terminal Voltages and Pre-Conditioning
Short Channel Effects
Body Doping Effects
Surface Potential Calculation
Drain Saturation Voltage
Calculate Average Field, Potential, and Charge
Mobility Degradation
Output Conductance
Veolocity Saturation
Drain Current Model
C-V Model
Parasitic Resistance and Capacitance Models
Impact Ionization and GIDL/GISL Model
Gate-Induced-Drain/Source-Leakage Current
Gate Tunneling Current
Self Heating Model
Noise Modeling
Model Version Update
Version 102.94
Version 102.92
Version 102.90
Version 102.80
Version 102.70
Version 102.61
Component Statements
Sample Model Statement
Sample Instance Statement
Model Equations
Equivalent Circuit
Ids Equations
Igs and Igd Equations
Temperature Equations
Charge Equations
Excess Phase
Self Heating Model
Noise Model
Igs, Igd Shot Noise and Flicker Noise
Ids Flicker Noise
Thermal Noise
Release History and Version
Model Usage
Instance Syntax
Model Syntax
Component Statements
Instance Parameters
Model Parameters
Model Equations
Equivalent Circuit
Ids Equations
Igs and Igd Equations
Temperature Equations
Charge Equations
Excess Phase
Self Heating Model
Noise Model
Igs, Igd Shot Noise and Flicker Noise
Ids Flicker Noise
Thermal Noise
Release History and Version
Model Usage
Instance Syntax
Model Syntax
Component Statements
Instance Parameters
Model Parameters
Model Equations
Junction Charge
Ideal Current
Ideal Current with High Injection
Shockley-Read-Hall current
Trap-Assisted Tunneling Current
Band-to-band tunneling current
Avalanche and Breakdown
Total Current
Thermal Voltage
Band Gap
Intrinsic Carrier Concentration
Saturation Current Density
Determination of Vmax
Built-In Voltages
Determination of VF, min and Vch
Voltage Difference VAK
Final Junction Current
Auxiliary Equations
Model Version and Development
Version Update and Enhancement
Model Usage
Instance Syntax
Model Syntax
Component Statements
Instance Parameters
Model Parameters
Model Overview
Model Structure
Version Update and Enhancement
Version 2.3.0 Enhancement
Geometrical dependences, stress effects and junction asymmetry
Scaling Equations
Stress Model
Asymmetric Junctions
Model Equations
Internal Parameters Including Temperature Dependencies
Terminal Voltage Conditioning
Backplane Depletion
Channel Current
Gate Current, Intrinsic Charges and Overlap Related Variables
Gate Current
Gate Induced Drain/Source Leakage (GIDL/GISL)
Charge Model
Self-Heating
Noise Model
Total Current and Charges
Operating Point Output
Voltages
Component Statements
Model Definition
Instance Definition
Model Overview
Model Equations
Physical Constants
Voltages Calculation and Pre Conditioning
Temperature Dependence
Surface Potential Calculation
Intrinsic Charge Calculation
Drain Current Model
Self Heating Model
Short Channel Effects
Access Region and Parasitic Resistances
Parasitic Capacitances
Trap Model
Gate Current Model
Field Plate Model
Noise Model
Component Statements
Model Definition
Instance Definition
Model Equations
Transistor drain current formulation
Transistor channel charge formulation
Gate current formulation
Charge trapping effects
Device-noise: RF- and phase-noise modeling
Component Statements
Model Definition
Instance Definition
Model Overview
Equivalent Circuit
Model Equations
Component Statements
Instance
Model
Model Structure
Version Update and Enhancements
L-UTSOI 102.7 Enhancements
L-UTSOI 102.6 Enhancements
Geometrical dependences, stress effects and junction asymmetry
Scaling Equations
Stress model for SWSTRESS = 1
Stress model for SWSTRESS = 2
Asymmetric junctions
Model Equations
Internal parameters including temperature dependences
Terminal voltage conditioning
Backplane depletion
Channel current
Gate current, intrinsic charges and overlap related variables
Gate current
Gate Induced Drain/Source Leakage (GIDL/GISL)
Impact ionization current
Charge model
Self-heating
Noise model
Total currents and charges
Component Statements
Model Definition
Instance Definition
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