1

mult=1

Number of devices in parallel.

2

l=2e-06 m

Drawn channel length in the layout. Scale set by option scale.

3

w=1e-05 m

Drawn channel width in the layout. Scale set by option scale.

4

nf=1

Number of fingers.

5

ngcon=1

Number of gate contacts.

6

xgw=1e-07 m

Distance from the gate contact to the channel edge.

7

printscaled=0

Print scaled parameter info if value not equal to zero.

8

trise=0 K

Difference between the local ambient and global ambient temperature.

9

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

10

m=1

alias of mult.

11

mos_region=SUBTHRESHOLD

12

diode_region=ON

1

level=1.1e+04

Transistor Level.

2

paramchk=0

Level of clip warning info.

3

vbox=0 V

Oxide breakdown voltage.

4

vbds=0 V

Drain-source breakdown voltage.

5

tmin=0 s

Ovcheck tmin value.

6

lvar=0 m

Difference between the actual and the programmed poly-silicon gate length.

7

lap=4e-08 m

Effective channel length reduction per side.

8

wvar=0 m

Difference between the actual and the programmed field-oxide opening.

9

wot=0 m

Effective channel width reduction per side.

10

tr=21 C

Reference temperature.

11

lmin=0 m

Device length low limit for binning selection.

12

lmax=1 m

Device length high limit for binning selection.

13

wmin=0 m

Device width low limit for binning selection.

14

wmax=1 m

Device width high limit for binning selection.

15

vfb=-1.05 V

Flat-band voltage at reference temperature.

16

poko=0.5 V

Coefficient for the geometry-independent part of KO.

17

plko=0 V

Coefficient for the length dependence of KO.

18

pwko=0 V

Coefficient for the width dependence of KO.

19

plwko=0 V

Coefficient for the length times width dependence of KO.

20

kpinv=0 1/V

Inverse of body-effect factor of the poly-silicon gate.

21

pophib=0.95 V

Coefficient for the geometric independent part of PHIB.

22

plphib=0 V

Coefficient for the length dependence of PHIB.

23

pwphib=0 V

Coefficient for the width dependence of PHIB.

24

plwphib=0 V

Coefficient for the length times width dependence of PHIB.

25

pobet=0.00192(n)/0.000381(p) A/V²

Coefficient for the geometry-independent part of BET.

26

plbet=0 A/V²

Coefficient for the length dependence of BET.

27

pwbet=0 A/V²

Coefficient for the width dependence of BET.

28

plwbet=0 A/V²

Coefficient for the width over length dependence of BET.

29

pothesr=0.356(n)/0.73(p) 1/V

Coefficient of the geometry-independent part of THESR.

30

plthesr=0 1/V

Coefficient of the length dependence of THESR.

31

pwthesr=0 1/V

Coefficient of the width dependence of THESR.

32

plwthesr=0 1/V

Coefficient of the length times width dependence of THESR.

33

potheph=0.0129(n)/0.001(p) 1/V

Coefficient of the geometry-independent part of THEPH.

34

pltheph=0 1/V

Coefficient of the length dependence of THEPH.

35

pwtheph=0 1/V

Coefficient of the width dependence of THEPH.

36

plwtheph=0 1/V

Coefficient of the length times width dependence of THEPH.

37

poetamob=1.4(n)/3(p)

Coefficient of the geometry-independent part of ETAMOB.

38

pletamob=0

Coefficient of the length dependence of ETAMOB.

39

pwetamob=0

Coefficient of the width dependence of ETAMOB.

40

plwetamob=0

Coefficient of the length times width dependence of ETAMOB.

41

pother=0.0812(n)/0.079(p) 1/V

Coefficient of the geometry-independent part of THER.

42

plther=0 1/V

Coefficient of the length dependence of THER.

43

pwther=0 1/V

Coefficient of the width dependence of THER.

44

plwther=0 1/V

Coefficient of the length times width dependence of THER.

45

ther1=0 V

Numerator of gate voltage dependent part of series resistance.

46

ther2=1 V

Denominator of gate voltage dependent part of series resistance.

47

pothesat=0.251(n)/0.173(p) 1/V

Coefficient of the geometry-independent part of THESAT.

48

plthesat=0 1/V

Coefficient of the length dependence of THESAT.

49

pwthesat=0 1/V

Coefficient of the width dependence of THESAT.

50

plwthesat=0 1/V

Coefficient of the length times width dependence of THESAT.

51

potheth=1e-05(n)/0(p) 1/V³

Coefficient of the geometry-independent part of THETH.

52

pltheth=0 1/V³

Coefficient of the length dependence of THETH.

53

pwtheth=0 1/V³

Coefficient of the width dependence of THETH.

54

plwtheth=0 1/V³

Coefficient of the length times width dependence of THETH.

55

posdibl=0.000853(n)/3.55e-05(p) 1/V

Coefficient of the geometry-independent part of SDIBL.

56

plsdibl=0 1/V

Coefficient of the length dependence of SDIBL.

57

pwsdibl=0 1/V

Coefficient of the width dependence of SDIBL.

58

plwsdibl=0 1/V

Coefficient of the length times width dependence of SDIBL.

59

pomo=0

Coefficient of the geometry-independent part of MO.

60

plmo=0

Coefficient of the length dependence of MO.

61

pwmo=0

Coefficient of the width dependence of MO.

62

plwmo=0

Coefficient of the length times width dependence of MO.

63

possf=0.012(n)/0.01(p) 1/V

Coefficient of the geometry-independent part of SSF.

64

plssf=0 1/V

Coefficient of the length dependence of SSF.

65

pwssf=0 1/V

Coefficient of the width dependence of SSF.

66

plwssf=0 1/V

Coefficient of the length times width dependence of SSF.

67

poalp=0.025

Coefficient of the geometry-independent part of ALP.

68

plalp=0

Coefficient of the length dependence of ALP.

69

pwalp=0

Coefficient of the width dependence of ALP.

70

plwalp=0

Coefficient of the length times width dependence of ALP.

71

vp=0.05 V

Characteristic voltage of channel-length modulation.

72

pomexp=0.2

Coefficient of the geometry-independent part of MEXP.

73

plmexp=0

Coefficient of the length dependence of MEXP.

74

pwmexp=0

Coefficient of the width dependence of MEXP.

75

plwmexp=0

Coefficient of the length times width dependence of MEXP.

76

poa1=6.02(n)/6.86(p)

Coefficient of the geometry-independent part of A1.

77

pla1=0

Coefficient of the length dependence of A1.

78

pwa1=0

Coefficient of the width dependence of A1.

79

plwa1=0

Coefficient of the length times width dependence of A1.

80

poa2=38(n)/57.3(p) V

Coefficient of the geometry-independent part of A2.

81

pla2=0 V

Coefficient of the length dependence of A2.

82

pwa2=0 V

Coefficient of the width dependence of A2.

83

plwa2=0 V

Coefficient of the length times width dependence of A2.

84

poa3=0.641(n)/0.425(p)

Coefficient of the geometry-independent part of A3.

85

pla3=0

Coefficient of the length dependence of A3.

86

pwa3=0

Coefficient of the width dependence of A3.

87

plwa3=0

Coefficient of the length times width dependence of A3.

88

poiginv=0 A/V²

Coefficient of the geometry-independent part of IGINV.

89

pliginv=0 A/V²

Coefficient of the length dependence of IGINV.

90

pwiginv=0 A/V²

Coefficient of the width dependence of IGINV.

91

plwiginv=0 A/V²

Coefficient of the length times width dependence of IGINV.

92

pobinv=48(n)/87.5(p) V

Coefficient of the geometry-independent part of BINV.

93

plbinv=0 V

Coefficient of the length dependence of BINV.

94

pwbinv=0 V

Coefficient of the width dependence of BINV.

95

plwbinv=0 V

Coefficient of the length times width dependence of BINV.

96

poigacc=0 A/V²

Coefficient of the geometry-independent part of IGACC.

97

pligacc=0 A/V²

Coefficient of the length dependence of IGACC.

98

pwigacc=0 A/V²

Coefficient of the width dependence of IGACC.

99

plwigacc=0 A/V²

Coefficient of the length times width dependence of IGACC.

100

pobacc=48 V

Coefficient of the geometry-independent part of BACC.

101

plbacc=0 V

Coefficient of the length dependence of BACC.

102

pwbacc=0 V

Coefficient of the width dependence of BACC.

103

plwbacc=0 V

Coefficient of the length times width dependence of BACC.

104

vfbov=0 V

Flat-band voltage for the Source/Drain overlap extensions.

105

kov=2.5 V

Body-effect factor for the Source/Drain overlap extensions.

106

poigov=0 A/V²

Coefficient of the geometry-independent part of IGOV.

107

pligov=0 A/V²

Coefficient of the length dependence of IGOV.

108

pwigov=0 A/V²

Coefficient of the width dependence of IGOV.

109

plwigov=0 A/V²

Coefficient of the length times width dependence of IGOV.

110

poagidl=0 A/V³

Coefficient of the geometry-independent part of AGIDL.

111

plagidl=0 A/V³

Coefficient of the length dependence of AGIDL.

112

pwagidl=0 A/V³

Coefficient of the width dependence of AGIDL.

113

plwagidl=0 A/V³

Coefficient of the length times width dependence of AGIDL.

114

pobgidl=41 V

Coefficient of the geometry-independent part of BGIDL.

115

plbgidl=0 V

Coefficient of the length dependence of BGIDL.

116

pwbgidl=0 V

Coefficient of the width dependence of BGIDL.

117

plwbgidl=0 V

Coefficient of the length times width dependence of BGIDL.

118

pocgidl=0

Coefficient of the geometry-independent part of CGIDL.

119

plcgidl=0

Coefficient of the length dependence of CGIDL.

120

pwcgidl=0

Coefficient of the width dependence of CGIDL.

121

plwcgidl=0

Coefficient of the length times width dependence of CGIDL.

122

tox=3.2e-09 m

Thickness of gate oxide layer.

123

pocox=2.98e-14(n)/2.72e-14(p) F

Coefficient of the geometry-independent part of COX.

124

plcox=0 F

Coefficient of the length dependence of COX.

125

pwcox=0 F

Coefficient of the width dependence of COX.

126

plwcox=0 F

Coefficient of the length times width dependence of COX.

127

pocgdo=6.39e-15(n)/6.36e-15(p) F

Coefficient of the geometry-independent part of CGDO.

128

plcgdo=0 F

Coefficient of the length dependence of CGDO.

129

pwcgdo=0 F

Coefficient of the width dependence of CGDO.

130

plwcgdo=0 F

Coefficient of the length time width dependence of CGDO.

131

pocgso=6.39e-15(n)/6.36e-15(p) F

Coefficient of the geometry-independent part of CGSO.

132

plcgso=0 F

Coefficient of the length dependence of CGSO.

133

pwcgso=0 F

Coefficient of the width dependence of CGSO.

134

plwcgso=0 F

Coefficient of the length times width dependence of CGSO.

135

gatenoise=0

Flag for in/exclusion of induced gate thermal noise.

136

nt=1.62e-20 J

Thermal noise coefficient.

137

ponfa=8.32e+22(n)/1.9e+22(p) 1/V m⁴

Coefficient of the geometry-independent part of NFA.

138

plnfa=0 1/V m⁴

Coefficient of the length dependence of NFA.

139

pwnfa=0 1/V m⁴

Coefficient of the width dependence of NFA.

140

plwnfa=0 1/V m⁴

Coefficient of the length times width dependence of NFA.

141

ponfb=2.51e+07(n)/5.04e+06(p) 1/V m²

Coefficient of the geometry-independent part of NFB.

142

plnfb=0 1/V m²

Coefficient of the length dependence of NFB.

143

pwnfb=0 1/V m²

Coefficient of the width dependence of NFB.

144

plwnfb=0 1/V m²

Coefficient of the length times width dependence of NFB.

145

ponfc=0(n)/3.63e-10(p) 1/V

Coefficient of the geometry-independent part of NFC.

146

plnfc=0 1/V

Coefficient of the length dependence of NFC.

147

pwnfc=0 1/V

Coefficient of the width dependence of NFC.

148

plwnfc=0 1/V

Coefficient of the length times width dependence of NFC.

149

potvfb=0.0005 V/K

Coefficient of the geometry-independent part of STVFB.

150

pltvfb=0 V/K

Coefficient of the length dependence of STVFB.

151

pwtvfb=0 V/K

Coefficient of the width dependence of STVFB.

152

plwtvfb=0 V/K

Coefficient of the length times width dependence of STVFB.

153

potphib=-0.00085 V/K

Coefficient of the geometry-independent part of STPHIB.

154

pltphib=0 V/K

Coefficient of the length dependence of STPHIB.

155

pwtphib=0 V/K

Coefficient of the width dependence of STPHIB.

156

plwtphib=0 V/K

Coefficient of the length times width dependence of STPHIB.

157

potetabet=1.3(n)/0.5(p)

Coefficient of the geometry-independent part of ETABET.

158

pltetabet=0

Coefficient of the length dependence of ETABET.

159

pwtetabet=0

Coefficient of the width dependence of ETABET.

160

plwtetabet=0

Coefficient of the length times width dependence of ETABET.

161

potetasr=0.65(n)/0.5(p)

Coefficient of the geometry-independent part of ETASR.

162

pltetasr=0

Coefficient of the length dependence of ETASR.

163

pwtetasr=0

Coefficient of the width dependence of ETASR.

164

plwtetasr=0

Coefficient of the length times width dependence of ETASR.

165

potetaph=1.35(n)/3.75(p)

Coefficient of the geometry-independent part of ETAPH.

166

pltetaph=0

Coefficient of the length dependence of ETAPH.

167

pwtetaph=0

Coefficient of the width dependence of ETAPH.

168

plwtetaph=0

Coefficient of the length times width dependence of ETAPH.

169

potetamob=0 1/K

Coefficient of the geometry-independent part of STETAMOB.

170

pltetamob=0 1/K

Coefficient of the length dependence of STETAMOB.

171

pwtetamob=0 1/K

Coefficient of the width dependence of STETAMOB.

172

plwtetamob=0 1/K

Coefficient of the length times width dependence of STETAMOB.

173

nu=2

Exponent of field dependence of mobility model.

174

potnuexp=5.25(n)/3.23(p)

Coefficient of the geometry-independent part of NUEXP.

175

pltnuexp=0

Coefficient of the length dependence of NUEXP.

176

pwtnuexp=0

Coefficient of the width dependence of NUEXP.

177

plwtnuexp=0

Coefficient of the length times width dependence of NUEXP.

178

potetar=0.95(n)/0.4(p)

Coefficient of the geometry-independent part of ETAR.

179

pltetar=0

Coefficient of the length dependence of ETAR.

180

pwtetar=0

Coefficient of the width dependence of ETAR.

181

plwtetar=0

Coefficient of the length times width dependence of ETAR.

182

potetasat=1.04(n)/0.86(p)

Coefficient of the geometry-independent part of ETASAT.

183

pltetasat=0

Coefficient of the length dependence of ETASAT.

184

pwtetasat=0

Coefficient of the width dependence of ETASAT.

185

plwtetasat=0

Coefficient of the length times width dependence of ETASAT.

186

pota1=0 1/K

Coefficient of the geometry-independent part of STA1.

187

plta1=0 1/K

Coefficient of the length dependence of STA1.

188

pwta1=0 1/K

Coefficient of the width dependence of STA1.

189

plwta1=0 1/K

Coefficient of the length times width dependence of STA1.

190

potbgidl=-0.000364 V/K

Coefficient of the geometry-independent part of STBGIDL.

191

pltbgidl=0 V/K

Coefficient of the length dependence of STBGIDL.

192

pwtbgidl=0 V/K

Coefficient of the width dependence of STBGIDL.

193

plwtbgidl=0 V/K

Coefficient of the length times width dependence of STBGIDL.

194

dta=0 K

Temperature offset of the device.

195

pocs=0

Coefficient of the geometry-independent part of CS.

196

plcs=0

Coefficient of the length dependence of CS.

197

pwcs=0

Coefficient of the width dependence of CS.

198

plwcs=0

Coefficient of the length times width dependence of CS.

199

potetacs=0

Coefficient of the geometry-independent part of ETACS.

200

pltetacs=0

Coefficient of the length dependence of ETACS.

201

pwtetacs=0

Coefficient of the width dependence of ETACS.

202

plwtetacs=0

Coefficient of the length times width dependence of ETACS.

203

rgo=0 Ω

Gate resistance.

204

rint=0 Ω m²

Contact resistance between silicide and poly.

205

rvpoly=0 Ω m²

Vertical poly resistance.

206

rshg=0 Ω/Sqr

Gate electrode diffusion sheet resistance.

207

dlsil=0 m

Silicide extension over the physical gate length.

208

scalelev=1.1e+04

flag for eldo model.

209

type=n

Transistor gender. Possible values are n and p.

210

imax=1000 A

Explosion current.

211

mbeo=0.0

DCmatch parameter.

212

mvto=0.0

Threshold mismatch intercept.

213

tnom (C)

Alias of tnom.

214

tref (C)

Alias of tnom.

216

compatible=spectre

Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, spiceplus, eldo, sspice, mica, and pspice.

1

tempeff (C)

Effective temperature for a single device.

2

meff

Effective multiplicity factor (m-factor).

3

int_s

4

int_d

1

ids (A)

Drain current, excluding avalanche and tunnel currents.

2

iavl (A)

Substrate current due to weak-avalanche.

3

igs (A)

Gate-to-source current due to direct tunneling.

4

igd (A)

Gate-to-drain current due to direct tunneling.

5

igb (A)

Gate-to-bulk current due to direct tunneling.

6

vds (V)

Drain-source voltage.

7

vgs (V)

Gate-source voltage.

8

vsb (V)

Source-bulk voltage.

9

vto (V)

Zero-bias threshold voltage.

10

vts (V)

Threshold voltage including back-bias effects.

11

vth (V)

Threshold voltage including back-bias and drain-bias effects.

12

vgt (V)

Effective gate drive voltage including back-bias and drain voltage effects.

13

vdss (V)

Drain saturation voltage at actual bias.

14

vsat (V)

Saturation limit.

15

gm (A/V)

Transconductance (d ids / d vgs).

16

gmb (A/V)

Substrate-transconductance (d ids / d vbs).

17

gds (A/V)

Output conductance (d ids / d vds).

18

cdd (F)

Capacitance (d qd / d vd).

19

cdg (F)

Capacitance (- d qd / d vg).

20

cds (F)

Capacitance (- d qd / d vs).

21

cdb (F)

Capacitance (- d qd / d vb).

22

cgd (F)

Capacitance (- d qg / d vd).

23

cgg (F)

Capacitance (d qg / d vg).

24

cgs (F)

Capacitance (- d qg / d vs).

25

cgb (F)

Capacitance (- d qg / d vb).

26

csd (F)

Capacitance (- d qs / d vd).

27

csg (F)

Capacitance (- d qs / d vg).

28

css (F)

Capacitance (d qs / d vs).

29

csb (F)

Capacitance (- d qs / d vb).

30

cbd (F)

Capacitance (- d qb / d vd).

31

cbg (F)

Capacitance (- d qb / d vg).

32

cbs (F)

Capacitance (- d qb / d vs).

33

cbb (F)

Capacitance (d qb / d vb).

34

cgdol (F)

Gate-drain overlap capacitance of the actual transistor.

35

cgsol (F)

Gate-source overlap capacitance of the actual transistor.

36

weff (m)

Effective channel width for geometrical models.

37

leff (m)

Effective channel length for geometrical models.

38

rg (Ω)

Gate resistance.

39

u

Transistor gain (gm/gds).

40

rout (Ω)

Small-signal output resistance (1/gds).

41

vearly (V)

Equivalent Early voltage (|id|/gds).

42

keff (V )

Body effect parameter.

43

beff (A/V²)

Gain factor.

44

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cin)).

45

sqrtsfw (V/Hz )

Input-referred RMS white noise voltage density.

46

sqrtsff (V/Hz )

Input-referred RMS white noise voltage density at 1 kHz.

47

fknee (Hz)

Cross-over frequency above which white noise is dominant.

48

table_ids (A)

Current.

49

table_vth (V)

Threshold voltage including back-bias and drain-bias effects.

50

table_qg (Coul)

Charge at g node.

51

table_qd (Coul)

Charge at d node.

52

table_qb (Coul)

Charge at b node.

53

BET (A/V²)

Gain factor.

54

ctype

Channel type (-1 for PMOS, +1 for NMOS).

55

von (V)

Signed vth (<0 for PMOS, >0 for NMOS).

56

mos_region=SUBTHRESHOLD

MOS region.
Possible values are off, sat, triode, and subth.

57

diode_region=ON

DIODE region.
Possible values are off and on.