mult=1

Number of devices in parallel.

printscaled=0

Print scaled parameter info if value not equal to zero.

trise=0 K

Difference between the local ambient and global ambient temperature.

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

m=1

Alias of mult.

mos_region=SUBTHRESHOLD

diode_region=ON

level=3.1e+03

Transistor level.

paramchk=0

Level of clip warning info.

vbox=0 V

Oxide breakdown voltage.

vbds=0 V

Drain-source breakdown voltage.

tmin=0 s

Ovcheck tmin value.

ron=1 Ω

Ohmic resistance at zero bias.

rsat=1 Ω

Space charge resistance at zero bias.

vsat=10 V

Critical drain-source voltage for hot carriers.

psat=1

Velocity saturation coefficient.

vp=-1 V

Pinch off voltage at zero gate and substrate voltages.

tox=-1 m

Gate oxide thickness.

dch=1e+21 m^-3

Doping level channel.

dsub=1e+21 m^-3

Doping level substrate.

vsub=0.6 V

Substrate diffusion voltage.

vgap=1.2 V

Bandgap voltage channel.

cgate=0 F

Gate capacitance at zero bias.

csub=0 F

Substrate capacitance at zero bias.

tausc=0 s

Space charge transit time of the channel.

ach=0

Temperature coefficient resistivity of the channel.

achmod=0

Parameter to switch to extended temperature scaling.

achron=0

Temperature coefficient of ohmic resistance at zero bias.

achvsat=0

Temperature coefficient of critical drain-source voltage for hot carriers.

achrsat=0

Temperature coefficient of space charge resistance at zero bias.

tref=25 deg. C

Reference temperature.

dta=0 deg. C

Temperature offset of the device.

rth=300 K/W

Thermal resistance.

cth=3e-09 J/K

Thermal capacitance.

ath=0

Temperature coefficient of the thermal resistance.

type=n

Transistor gender. Possible values are n and p.

imax=1000 A

Explosion current.

tnom (deg. C)

Alias of tnom.

tr (deg. C)

Alias of tnom.

compatible=spectre

Make device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, spiceplus, eldo, sspice, mica, and pspice.

tempeff (C)

Effective temperature for a single device.

meff

Effective multiplicity factor (m-factor).

int_s

int_d

ids (A)

Drain source current (including velocity saturation).

vds (V)

Drain source voltage.

vgs (V)

Gate source voltage.

vbs (V)

Bulk source voltage.

vp (V)

Channel pinch off voltage.

gm (A/V)

Transconductance (dIds/dVg).

gmb (A/V)

Bulk transconductance (dIds/dVb).

gds (A/V)

Output conductance (dIds/dVd).

qg (C)

Gate charge.

cgd (F)

Gate charge dependence on drain voltage (- dQg/dVd).

cgg (F)

Gate charge dependence on gate voltage (dQg/dVg).

cgs (F)

Gate charge dependence on source voltage (-dQg/dVs).

cgb (F)

Gate charge dependence on bulk voltage (-dQg/dVb).

qb (C)

Bulk charge.

cbd (F)

Bulk charge dependence on drain voltage (-dQb/dVd).

cbg (F)

Bulk charge dependence on gate voltage (-dQb/dVg).

cbs (F)

Bulk charge dependence on source voltage (-dQb/dVs).

cbb (F)

Bulk charge dependence on bulk voltage (dQb/dVb).

qd (C)

Drain charge.

cdd (F)

Drain charge dependence on drain voltage (dQd/dVd).

cdg (F)

Drain charge dependence on gate voltage (-dQd/dVg).

cds (F)

Drain charge dependence on source voltage (-dQd/dVs).

cdb (F)

Drain charge dependence on bulk voltage (-dQd/dVb).

qs (C)

Source charge.

csd (F)

Source charge dependence on drain voltage (-dQs/dVd).

csg (F)

Source charge dependence on gate voltage (-dQs/dVg).

css (F)

Source charge dependence on source voltage (dQs/dVs).

csb (F)

Source charge dependence on bulk voltage (-dQs/dVb).

u

Transistor gain (gm/gds).

rout (Ω)

Small signal output resistance (1/gds).

vearly (V)

Equivalent early voltage (|Ids|/gds).

iohm (A)

Drain source current excluding velocity saturation.

ihc (A)

Critical current for velocity saturation.

Pdiss (W)

Dissipation.

TK (K)

Actual temperature.

ctype

Channel type (-1 for PMOS, +1 for NMOS).

pwr (W)

Power.

mos_region

MOS region.
Possible values are off, sat, triode, and subth.