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MOS Level-1 Model (mos1)
The MOS1 model is derived from the FET model of Shichman and Hodges. Velocity saturation and the mobility variation effects can also be incorporated into this model. Click the following links to view the information about the MOS1 model:
- Channel Width and Length
- Threshold Voltage
- Drain Saturation Voltage
- Drain Current for the Subthreshold Region
- Drain Current for the Triode Region
- Drain Current for the Saturation Region
- Drain Saturation Voltage (Modified Level-1 Model)
- Drain Current for the Triode Region (Modified Level-1 Model)
- Drain Current for the Saturation Region (Modified Level-1 Model)
- Substrate Current
- Scaling Effects
- Component Statements
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