w=1.0e-06 m

Design width of resistor body.

l=1.0e-06 m

Design length of resistor body.

wd=0 m

Dogbone width (total; not per side).

a1=0 m²

Area of node n1 partition.

p1=0 m

Perimeter  of node n1 partition.

c1=0

Number of contacts at node n1 terminal.

a2=0 m²

Area of node n2 partition.

p2=0 m

Perimeter  of node n2 partition.

c2=0

Number of contacts at node n2 terminal.

trise=0 degC

Local temperature delta to ambient (before self-heating).

sw_noise=1

Switch for including noise:   0=no and 1=yes.

sw_et=1

Switch for self-heating:   0=no and 1=yes.

sw_mman=0

Switch for mismatch analysis: 0=no and 1=yes.

resform1=0

Use the resistance form for n1 and i1 branch: 0=no and 1=yes.

resform2=0

Use the resistance form for n2 and i2 branch: 0=no and 1=yes.

nsmm_rsh=0

Number of standard deviations of local variation for rsh.

nsmm_w=0

Number of standard deviations of local variation for w.

nsmm_l=0

Number of standard deviations of local variation for l.

m=1

Number of devices in parallel.

isnoisy=yes

Should device generate noise.

Possible values are yes and no.

version=1

Model version.

subversion=0

Model subversion.

revision=0

Model revision.

level=1003

Model level.

type=(-1)

Resistor type: -1=n-body and +1=p-body.

scale=1.0

Scale factor for instance geometries.

shrink=0 %

Shrink percentage for instance geometries.

tmin=(-100) degC

Minimum ambient temperature.

tmax=500 degC

Maximum ambient temperature.

rthresh=1.0e-03 Ω

Threshold to switch end resistance to V=I*R form.

gmin=1.0e-12 S

Minimum conductance.

imax=1.0 A

Current at which to linearize diode currents.

tnom=27.0 degC

Nominal (reference) temperature.

lmin=0 μm

Minimum allowed drawn length.

lmax=9.9e09 μm

Maximum allowed drawn length.

wmin=0 μm

Minimum allowed drawn width.

wmax=9.9e09 μm

Maximum allowed drawn width.

jmax=100 A/μm

Maximum current density.

vmax=9.9e09 V

Maximum voltage w.r.t. control node nc.

tminclip=(-100) degC

Clip minimum temperature.

tmaxclip=500 degC

Clip maximum temperature.

rsh=100 Ω/sq

Sheet resistance.

xw=0 μm

Width offset (total).

nwxw=0 μm²

Narrow width offset correction coefficient.

wexw=0 μm

Webbing effect width offset correction coefficient (for dogboned devices).

fdrw=1.0 μm

Finite doping width offset reference width.

fdxwinf=0 μm

Finite doping width offset width value for wide devices.

xl=0 μm

Length offset (total).

xlw=0

Width dependence of length offset.

dxlsat=0 μm

Additional length offset for velocity saturation calculation.

nst=1.0

Subthreshold slope parameter.

ats=0 V

Saturation smoothing parameter.

atsl=0 Vμm

Saturation smoothing parameter 1/l coefficient

dfinf=0.01 /V^0.5

Depletion factor for wide/long device.

dfw=0 μm/V^0.5

Depletion factor 1/w coefficient.

dfl=0 μm/V^0.5

Depletion factor 1/l coefficient.

dfwl=0 μm²/V^0.5

Depletion factor 1/(w*l) coefficient.

sw_dfgeo=1

Switch for depletion factor geometry dependence: 0=drawn and 1=effective.

dp(dpinf)=2.0 V

Depletion potential.

dpl=0 (Vμm)dple

Depletion potential l dependence coefficient.

dple=1.0

Depletion potential l dependence exponent.

dpw=0 (Vμm)dple

Depletion potential w dependence coefficient.

dpwe=1.0

Depletion potential w dependence exponent.

dpwl=0 (Vμm)dpwe+dple

Depletion potential wl dependence coefficient.

sw_vsatt=0

Switch for vsat temperature effects:

0=none and 1=link with body resistance.

sw_accpo=0

Switch for pinch-off modeling.

grpo=10-12

Minimum body conductance in pinch-off.

ecrit=4.0 V/μm

Velocity saturation critical field.

ecorn=0.4 V/μm

Velocity saturation corner field.

du=0.02

Mobility reduction at ecorn.

rc=0 Ω

Resistance per contact.

rcw=0 Ω μm

Width adjustment for contact resistance.

fc=0.9

Depletion capacitance linearization factor.

isa=0 A/μm²

Diode saturation current per unit area.

na=1.0

Ideality factor for isa.

ca=0 F/μm²

Fixed capacitance per unit area.

cja=0 F/μm²

Depletion capacitance per unit area.

pa=0.75 V

Built-in potential  for cja.

ma=0.33

Grading coefficient for cja.

aja=(-0.5) V

Smoothing parameter for cja.

isp=0 A/μm

Diode saturation current per unit perimeter.

np=1.0

Ideality factor for isp.

cp=0 F/μm

Fixed capacitance per unit perimeter.

cjp=0 F/μm

Depletion capacitance per unit perimeter.

pp=0.75 V

Built-in potential  for cjp.

mp=0.33

Grading coefficient for cjp.

ajp=(-0.5) V

Smoothing parameter for cjp.

vbv=0 V

Breakdown voltage.

ibv=1.0e-06 A

Current at breakdown.

nbv=1.0

Ideality factor for breakdown current.

kfn=0

Flicker noise coefficient (unit depends on afn).

afn=2.0

Flicker noise current exponent.

bfn=1.0

Flicker noise 1/f exponent.

sw_fngeo=0

Switch for flicker noise geometry calculation: 0=drawn and 1=effective.

ea=1.12 V

Activation voltage for diode temperature dependence.

xis=3.0

Exponent for diode temperature dependence.

tc1=0/K

Resistance linear   TC.

tc2=0/K²

Resistance quadratic TC.

tc1l=0 μm/K

Resistance linear   TC length coefficient.

tc2l=0 μm/K²

Resistance quadratic TC length coefficient.

tc1w=0 μm/K

Resistance linear   TC width coefficient.

tc2w=0 μm/K²

Resistance quadratic TC width  coefficient.

tc1wl=0 μm2/K

Resistance linear TC 1/(wl) coefficient

tc2wl=0 μm2/K²

Resistance quadratic TC 1/(wl) coefficient

tc1rc=0/K

Contact resistance linear   TC.

tc2rc=0/K²

Contact resistance quadratic TC.

tc1dp=0/K

Depletion potential linear TC

tc2dp=0/K²

Depletion potential quadratic TC

tc1kfn=0/K

Flicker noise coefficient linear TC.

tc1vbv=0/K

Breakdown voltage linear   TC.

tc2vbv=0/K²

Breakdown voltage quadratic TC.

tc1nbv=0/K

Breakdown ideality factor linear TC.

tegth=0

Thermal conductance temperature exponent.

gth0=1.0e+06 W/K

Thermal conductance fixed component.

gthp=0 W/K/μm

Thermal conductance perimeter component.

gtha=0 W/K/μm²

Thermal conductance area component.

gthc=0 W/K

Thermal conductance contact component.

cth0=0 s W/K

Thermal capacitance fixed component.

cthp=0 s W/K/μm

Thermal capacitance perimeter component.

ctha=0 s W/K/μm²

Thermal capacitance area component.

cthc=0 s W/K

Thermal capacitance contact component.

nsig_rsh=0

Number of standard deviations of global variation for rsh.

nsig_w=0

Number of standard deviations of global variation for w.

nsig_l=0

Number of standard deviations of global variation for l.

sig_rsh=0 %

Global variation standard deviation for rsh (relative).

sig_w=0 μm

Global variation standard deviation for w   (absolute).

sig_l=0 μm

Global variation standard deviation for l   (absolute).

smm_rsh=0 %μm

Local  variation standard deviation for rsh (relative).

smm_w=0 μm^1.5

Local variation standard deviation for w   (absolute).

smm_l=0 μm^1.5

Local variation standard deviation for l   (absolute).

sw_mmgeo=0

Switch for flicker noise geometry calculation: 0=drawn and 1=effective.

mr=0

Resistor mismatch dependence.

mrl=0

Resistor mismatch length dependence.

mrlp=0

Resistor mismatch length power dependence.

mrw=0

Resistor mismatch width dependence.

mrwp=0

Resistor mismatch width power dependence.

mrlw1=0

Resistor mismatch area 1 dependence.

mrlw1p=0

Resistor mismatch area 1 power dependence.

mrlw2=0

Resistor mismatch area 2 dependence.

mrlw2p=0

Resistor mismatch area 2 power dependence.

xvsat=0

Exponent for saturation velocity temperature dependence.

tempeff (C)

Effective temperature for a single device.

meff

Effective multiplicity factor (m-factor).

v (V)

Voltage across resistor.

ibody (A)

Current through resistor body.

power (W)

Dissipated power.

pwr (W)

Dissipated power, alias of power.

leff_um (μm)

Effective electrical length in um.

weff_um (μm)

Effective electrical width  in um.

r0 (Ω)

Zero-bias resistance (per segment).

r_dc (Ω)

DC resistance (including bias dependence and m).

r_ac (Ω)

AC resistance (including bias dependence and m).

rth (K/W)

Thermal resistance.

cth (s W/K)

Thermal capacitance.

dt_et (C)

Self-heating temperature rise.