Reference
Model Equations
Some important model equations are listed as following for your reference:
Equations for DC current
MOSFET channel current
(-1)
Anode current: current through the resistor Rb
(-2)
Steady-state collector current
(-3)
Steady-state base current
(-4)
Avalanche multiplication current
(-5)
Equations for capacitance and charge
Gate Source
(-6)
Drain Source
(-7)
Where
(-8)
Gate Drain
(-9)
Instance Parameters
|
area (m^2)
|
Area of the device.
|
|
wb (m)
|
Metallurgical base width.
|
|
tau (s)
|
Ambipolar recombination lifetime.
|
|
agd (m^2)
|
Gate-drain overlap area.
|
|
kp (A/V^2)
|
MOS transconductance.
|
|
trise (C)
|
Device temperature increased.
|
Model Parameters
Default for instance parameters
|
area=1.0e-5 m^2
|
Default area of the device.
|
|
wb=9.0e-5 m
|
Default metallurgical base width.
|
|
tau=7.1e-6 s
|
Default ambipolar recombination lifetime.
|
|
agd=5.0e-6 m^2
|
Default gate-drain overlap area.
|
|
kp=0.38 A/V^2
|
Default MOS transconductance.
|
Basic Device Parameters
|
vt=4.7 V
|
Threshold voltage.
|
|
kf=1.0
|
Triode region factor.
|
|
theta=0.02 1/V
|
Transverse field factor.
|
|
nb=2.0e14 cm^-3
|
Base doping.
|
|
mun=1.5e3 cm^2/(V*s)
|
Electron mobility.
|
|
mup=4.5e2 cm^2/(V*s)
|
Hole mobility.
|
|
jsne=6.5e-13 A/(cm^2)
|
Emitter saturation current density.
|
|
bvn=4.0
|
Avalanche multiplication exponent.
|
|
bvf=1.0
|
Avalanche uniformity exponent.
|
|
cgs=1.24e-8 F/(cm^2)
|
Gate-source capacitance per unit area.
|
|
coxd=3.5e-8 F/(cm^2)
|
Gate-drain oxide capacitance per unit area.
|
|
vtd=1.0e-3 V
|
Gate-drain overlap depletion threshold.
|
Operating Point Parameters
|
ice (A)
|
Collector-emitter current.
|
|
vce (V)
|
Collector-emitter voltage.
|
|
vds (V)
|
Internal Vds of mosfet.
|
|
vge (V)
|
Gate-emitter voltage.
|
|
vdsat (V)
|
Drain-source saturation voltage.
|
|
gm (S)
|
Common-source transconductance.
|
|
ic_bjt (A)
|
Resistive collector current.
|
|
ie (A)
|
Resistive emitter current.
|
|
imult (A)
|
Avalanche multiplication current.
|
|
ib_bjt (A)
|
Steady-state base current.
|
|
imos (A)
|
MOSFET channel current.
|
|
cge (F)
|
dQg_dVe.
|
|
cgg (F)
|
dQg_dVg.
|
|
pwr (W)
|
Power at operating point.
|
|
cdg (F)
|
dQd_dVg.
|
|
cds (F)
|
dQd_dVs.
|
|
qgs (Coul)
|
Qgs for mosfet.
|
|
qds (Coul)
|
Qds for mosfet.
|
|
qdg (Coul)
|
Qdg for mosfet.
|
|
qeb (Coul)
|
Qeb for bjt.
|
Related Topics
IGBT0 Model (igbt0)
Return to top
