MISN Field Effect Transistor (misnan)
Cadence plans to stop supporting this model and recommends that it no longer be used.
The MISN model is formulated in terms of solutions for the boundary surface potentials of the channel and has the inherent property of continuous modeling. It is an inhouse MOSFET model of NORTEL. The MISN model requires a model statement.
This device is not supported within altergroup.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so
Sample Instance Statement:
mn1 (1 2 0 0) nch w=1.5u l=1u ad=2.6p as=2.6p pd=6.6p ps=6.6p
Sample Model Statement:
model nch misnan type=n cox=4.4e-6 dop=2e17 phi=-0.43 xj=0.23 scrat=1.4 mu=400 rws=250 is=0.98e-13 cjgo=2e-13 noimdl=1
Instance Definition
Name d g s b ModelName parameter=value ...
Instance Parameters
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1
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w=1e-5 m
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Channel width.
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2
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l=3e-6 m
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Channel length.
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3
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as=3e-11 m2
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Area of source diffusion.
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4
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ad=3e-11 m2
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Area of drain diffusion.
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5
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ps=2.6e-5 m
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Perimeter of source diffusion.
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6
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pd=2.6e-5 m
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Perimeter of drain diffusion.
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7
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m=1
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Multiplicity factor (number of MOSFETs in parallel).
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8
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region=triode
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Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, or subthresh.
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Model Definition
model modelName misnan parameter=value ...
Model Parameters
Intrinsic MOS parameters
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1
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type=n
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Transistor gender. Possible values are n or p.
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2
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cox=4.309e-7 F/cm2
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Gate oxide cap per unit area.
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3
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dop=1.665e17 cm-3
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Substrate doping. Default = 2.58e17 for pmos.
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4
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phi=-0.55 V
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Gate Fermi potential.
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5
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qss=-5.078e-8 Coul/cm2
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|
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Effective gate oxide charge per unit area. Default = 1.05e-8 for pmos.
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6
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dopldd=3.2e17 cm-3
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|
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LDD region doping concentration. Default = 3.2e19 for pmos.
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Geometry parameters
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7
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lvar=0 μm
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Gate length correction.
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8
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wvar=0 μm
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Gate width correction.
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9
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dls=0.0273 μm
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Sideway diffusion length of source region. Default = 0.037 for pmos.
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10
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dld=0.0273 μm
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Sideway diffusion length of drain region. Default = 0.037 for pmos.
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11
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dl=0.07 μm
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Sideways diffusion length of S/D regions. Default = 0.04 for pmos.
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12
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dw=0.032 μm
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Electrical channel width correction. Default = 0.018 for pmos.
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Threshold voltage parameters
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13
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xj=0.24 μm
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Source/drain-to-substrate junction depth. Default = 0.31 for pmos.
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14
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scrat=1.5
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Short channel threshold voltage ratio. Default = 0.7 for pmos.
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15
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scind=1.45
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Short channel threshold voltage index. Default = 1.42 for pmos.
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16
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ncrat=0.17
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Narrow channel threshold voltage ratio. Default = 0.095 for pmos.
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17
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athp=7.5
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Factor controlling peak magnitude effect. Default = 3.5 for pmos.
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18
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athl=2e4 1/cm
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Factor controlling channel length dependence effect. Default = 4e4 for pmos.
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19
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athb=-1.7e-3
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Factor controlling substrate bias dependence effect. Default = -6e-3.
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Mobility parameters
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20
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mu=577 cm2/V s
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Low-field carrier mobility. Default = 120 for pmos.
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21
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mutxp=1.72
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Temperature coefficient for the carrier mobility. Default = 1.01 for pmos.
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22
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kg=1.4e-7 cm/V
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Gate field factor. Default = 1.685e-7.
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23
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v0=3.21e7 cm/s
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Scattering limited velocity. Default = 2.45e7.
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24
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v0txp=-6.3
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Temp coefficient for scattering limited velocity. Default = -5 for pmos.
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25
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find=1.25
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Field mobility index factor. Default = 1.9 for pmos.
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26
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gfc=9.1e-10
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Gate voltage dependence of enhanced gate-field scattering. Default = 1.05e-10 for pmos.
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27
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gfcm=3e-5
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Drain voltage dependence of enhanced gate-field scattering. Default = 2.3e-3 for pmos.
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28
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gfmb=1.45e-3
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Factor controlling substrate bias dependence of enhanced gate-field scattering. Default 3.3e-3 for pmos.
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29
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csf=1.06e-11
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Drain voltage dependence of coulomb scattering. Default = 1.35e-12 for pmos.
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30
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csfb=1.61e-3
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Body voltage dependence of coulomb scattering. Default = 8.5e-3 for pmos.
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Saturation parameters
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31
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dprat=15
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Drain region/channel doping ration. Default = 2 for pmos.
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32
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satpr=0.2
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Saturation region shaping factor. Default = 1.0 for pmos.
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33
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sbdr=0.3535534
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Primary parameter controlling the onset of saturation.
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34
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sadr=5
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Secondary parameter controlling the onset of saturation.
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Capacitance parameters
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35
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sccf=0.25
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Inner fringing factor for the N+ S/D.
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Extrinsic parameters
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36
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rws=480 Ω μm
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Source series resistance. Default = 1180 for pmos.
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37
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rwd=480 Ω μm
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Drain series resistance. Default = 1180 for pmos.
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38
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rsd=-1 Ω μm
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Drain/source series resistance. Negative value for asymmetrical devices.
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39
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rgsh=0 Ω μm
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Gate series resistance.
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40
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wtgf=0.28 μm
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Width of transition from gate to field oxide under poly.
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41
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cpts=5.7e-9 F/cm2
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|
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Poly-to-substrate capacitance per unit area.
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42
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cgfrs=1e-12 F/cm
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Gate-source overlap fringing field capacitance.
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43
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cgfrd=1e-12 F/cm
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Gate-drain overlap fringing field capacitance.
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44
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cgfr=1.36e-12 F/cm
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Gate overlap fringing field capacitance.
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Junction parameters
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45
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is=1.02e-12 A/cm2
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|
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Sat current per unit area of S/D region-injection component. Default = 9.21e-13 for pmos.
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46
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isg=1e-20 A/cm
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Sat current per unit length of gate oxide periphery-injection component. Default = 1.17e-20.
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47
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isf=1e-20 A/cm
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Sat current per unit length of field oxide periphery-injection component. Default = 1.17e-20.
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48
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ig=1.31e-10 A/cm2
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Sat current per unit area of S/D region-generation component. Default = 8.27e-10.
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49
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igg=6.99e-14 A/cm
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Sat current per unit length of gate oxide periphery-generation/recombination component. Default = 6.47e-14.
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50
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igf=6.99e-14 A/cm
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Sat current per unit length of field oxide periphery-generation/recombination component. Default = 6.47e-14.
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51
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cjo=9.39e-8 F/cm2
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Zero bias junction capacitance per unit area. Default = 1.273e-7 for pmos.
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52
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ena=0.387
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Junction capacitance coefficient for the area component. Default = 0.472 for pmos.
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53
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cjgo=2.085e-12 F/cm
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Zero bias junction cap per unit length of gate oxide periphery. Default = 1.864e-12 for pmos.
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54
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eng=0.322
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Junction cap coefficient for gate oxide periphery component. Default = 0.334 for pmos.
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55
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cjfo=3.037e-12 F/cm
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Zero bias junction cap per unit length of field oxide periphery. Default = 3.077e-12 for pmos.
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56
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enf=0.322
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Junction cap coefficient for field oxide periphery component. Default = 0.334 for pmos.
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Noise parameters
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57
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noimdl=1
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Noise model selector.
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58
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nt=1.6e10 cm-2
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Surface trap density. Default = 4e9 for pmos.
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59
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nttx=-4
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Surface trap density temperature coefficient.
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60
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fidx=0.85
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Flicker noise frequency coefficient.
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61
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beta=1
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Thermal noise proportional constant.
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62
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sgma=3e-16
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Capture cross section. Default = 3e-15 for pmos.
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63
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xtau=1e-8
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1/E depth.
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64
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wbar=1
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Barrier height for tunneling. Default = 4 for pmos.
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65
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dept=3e-7
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Depth of trap distribution.
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Operating-Point Parameters
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1
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vgs (V)
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Gate-source voltage.
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2
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vds (V)
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Drain-source voltage.
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3
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vbs (V)
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Bulk-source voltage.
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4
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id (A)
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Drain current.
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5
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vth (V)
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Threshold voltage.
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6
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vdsat (V)
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Drain-source saturation voltage.
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7
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gm (S)
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Common-source transconductance.
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8
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gd (S)
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Common-source output conductance.
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9
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gs (S)
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Body-transconductance.
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10
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gmb (S)
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Body transconductance.
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11
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gjs (S)
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Drain-bulk junction conductance.
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12
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ibs (A)
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Drain-bulk junction current.
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13
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gjd (S)
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Source-bulk junction conductance.
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14
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ibd (A)
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Source-bulk junction current.
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15
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qgg (Coul)
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Gate charge.
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16
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qss (Coul)
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Source charge.
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17
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qdd (Coul)
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Drain charge.
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18
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qbb (Coul)
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Bulk charge.
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19
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cgg (F)
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Cgg.
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20
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cgs (F)
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Cgs.
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21
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cgd (F)
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Cgd.
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22
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cgb (F)
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Cgb.
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23
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csg (F)
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Csg.
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24
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css (F)
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Css.
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25
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csd (F)
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Csd.
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26
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csb (F)
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Csb.
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27
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cdg (F)
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Cdg.
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28
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cds (F)
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Cds.
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29
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cdd (F)
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Cdd.
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30
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cdb (F)
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Cdb.
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31
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cbg (F)
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Cbg.
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32
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cbs (F)
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Cbs.
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33
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cbd (F)
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Cbd.
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34
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cbb (F)
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Cbb.
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Parameter Index
In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.
ad I-4
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csd OP-25
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ibd OP-14
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region I-8
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as I-3
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csf M-29
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ibs OP-12
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rgsh M-39
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athb M-19
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csfb M-30
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id OP-4
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rsd M-38
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athl M-18
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csg OP-23
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ig M-48
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rwd M-37
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athp M-17
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css OP-24
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igf M-50
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rws M-36
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beta M-61
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dept M-65
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igg M-49
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sadr M-34
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cbb OP-34
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dl M-11
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is M-45
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satpr M-32
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cbd OP-33
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dld M-10
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isf M-47
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sbdr M-33
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cbg OP-31
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dls M-9
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isg M-46
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sccf M-35
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cbs OP-32
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dop M-3
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kg M-22
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scind M-15
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cdb OP-30
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dopldd M-6
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l I-2
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scrat M-14
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cdd OP-29
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dprat M-31
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lvar M-7
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sgma M-62
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cdg OP-27
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dw M-12
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m I-7
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type M-1
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cds OP-28
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ena M-52
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mu M-20
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v0 M-23
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cgb OP-22
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enf M-56
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mutxp M-21
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v0txp M-24
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cgd OP-21
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eng M-54
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ncrat M-16
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vbs OP-3
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cgfr M-44
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fidx M-60
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noimdl M-57
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vds OP-2
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cgfrd M-43
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find M-25
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nt M-58
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vdsat OP-6
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cgfrs M-42
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gd OP-8
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nttx M-59
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vgs OP-1
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cgg OP-19
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gfc M-26
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pd I-6
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vth OP-5
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cgs OP-20
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gfcm M-27
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phi M-4
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w I-1
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cjfo M-55
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gfmb M-28
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ps I-5
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wbar M-64
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cjgo M-53
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gjd OP-13
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qbb OP-18
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wtgf M-40
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cjo M-51
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gjs OP-11
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qdd OP-17
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wvar M-8
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cox M-2
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gm OP-7
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qgg OP-15
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xj M-13
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cpts M-41
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gmb OP-10
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qss M-5
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xtau M-63
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csb OP-26
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gs OP-9
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qss OP-16
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