1

m=1

Multiplicity factor, number of devices in parallel.

2

w=180.0e-6 m

Width per Finger.

3

l=250.0e-9 m

Effective gate length.

4

ngf=2

Number of Fingers.

5

trise=0 C

Variability in device temperature.

6

dtemp=0.0 C

Device temperature offset from ambient.

7

isnoisy=1

Should device generate noise.

1

version=1.00

Version number.

2

tnom=27.0 deg C

Reference temperature for the model.

3

type=1

nFET=1 pFET=-1.

4

cg=4.00e-03 F/m²

Gate cap/area.

5

cofsm=1.0e-9 F/m

Gate - Source outer fringing cap/width.

6

cofdm=1.0e-10 F/m

Gate - Drain outer fringing cap/width.

7

cofdsm=1.0e-10 F/m

Source - Drain outer fringing cap/width.

8

cofdsubm=0.0 F/m

Sub - Drain outer fringing cap/width.

9

cofssubm=0.0 F/m

Sub - Source outer fringing cap/width.

10

cofgsubm=0.0 F/m

Sub - Gate outer fringing cap/width.

11

rsh=150.0 Ohms/Sq

2-DEG Sheet Resistance.

12

rcs=800e-6 Ohms m

Source contact resistance * Width.

13

rcd=800e-6 Ohms m

Drain contact resistance * Width.

14

vx0=3.0e5 m/s

Source injection velocity.

15

mu0=0.135 m²/Vs

Low-field mobility.

16

beta=1.50

Linear to saturation parameter.

17

vto=(-2.72) V

Threshold voltage.

18

ss=0.120 V/dec

Sub-threshold slope.

19

delta1=16e-3

DIBL Coefficient 1.

20

delta2=0.0

DIBL Coefficient 2.

21

dibsat=10.0 V

DIBL saturation Voltage.

22

nd=0.0

Punchthrough factor for subth slope.

23

alpha=3.5

Weak to strong inversion transition factor.

24

lambda=0.0 1/V

CLM parameter.

25

vtheta=0.0 1/V

Scattering: velocity reduction parameter with Vg.

26

mtheta=0.0 1/V

Scattering: mobility reduction parameter with Vg.

27

vzeta=150e3 1/K

vx0 dependence on temperature.

28

vtzeta=(-0.4e-3) V/K

vto dependence on temperature.

29

epsilon=2.3

Mobility dependence on temperature.

30

rct1=0.0 1/K

Linear Rsh and Rc temperature coefficient.

31

rct2=0.0 1/K²

Quadratic Rsh and Rc temperature coefficient.

32

flagres=0

Flag parameter for resistor: resistor is chosen if flagres=1 or implicit transitor is chosen if flagres=0.

33

lgs=3.0e-6 m

Source access region (SAR) length parameter.

34

vtors=(-650) V

SAR threshold voltage.

35

cgrs=5.0e-3 F/m²

SAR gate-cap/area.

36

vx0rs=100e3 m/s

SAR source injection velocity.

37

mu0rs=100e-3 m²/Vs

SAR low-field mobility.

38

betars=1.00

SAR linear to saturation parameter.

39

delta1rs=100e-3

SAR DIBL Coefficient.

40

srs=0.100 V/dec

SAR Sub-threshold slope.

41

ndrs=0.0

SAR punchthrough factor for subth slope.

42

vthetars=0.0 1/V

SAR scattering: velocity reduction parameter with Vg.

43

mthetars=0.0 1/V

SAR scattering: mobility reduction parameter with Vg.

44

alphars=3.5

SAR weak to strong inversion transition factor.

45

lgd=4.85e-6 m

Drain access region (DAR) length parameter.

46

vtord=(-650) V

DAR threshold voltage.

47

cgrd=4.3e-3 F/m²

DAR gate-cap/area.

48

vx0rd=100e3 m/s

DAR source injection velocity.

49

mu0rd=100e-3 m²/Vs

DAR low-field mobility.

50

betard=1.00

DAR linear to saturation parameter.

51

delta1rd=0.35

DAR DIBL Coefficient.

52

srd=0.3 V/dec

DAR Sub-threshold slope.

53

ndrd=3.8

DAR punchthrough factor for subth slope.

54

vthetard=0.0 1/V

DAR scattering: velocity reduction parameter with Vg.

55

mthetard=0.0 1/V

DAR scattering: mobility reduction parameter with Vg.

56

alphard=3.5

DAR weak to strong inversion transition factor.

57

flagfp1=1

Flag parameter: GFP=1 or SFP=0.

58

lgfp1=0.0 m

FP Length.

59

vtofp1=(-44.5) V

FP threshold voltage.

60

cgfp1=2.0e-4 F/m²

FP gate-cap/area.

61

flagfp1s=1

Flag parameter: cfp1s select=1 or cfp1s not select=0.

62

cfp1s=1e-19 F/m

FP (source-side) to source cap/width.

63

ccfp1=0.9e-10 F/m

Source or gate to drain (under FP) cap/width.

64

cbfp1=0.0 F/m

Body to drain (under FP) cap/width.

65

vx0fp1=1.2e5 m/s

FP source injection velocity.

66

mu0fp1=0.2 m²/Vs

FP low-field mobility.

67

betafp1=1.00

FP linear to saturation parameter.

68

delta1fp1=0.0

FP DIBL Coefficient.

69

sfp1=3.2 V/dec

FP Sub-threshold slope.

70

ndfp1=0.0

FP punchthrough factor for subth slope.

71

vthetafp1=0.0 1/V

FP scattering: velocity reduction parameter with Vg.

72

mthetafp1=0.0 1/V

FP scattering: mobility reduction parameter with Vg.

73

alphafp1=1e-2

FP weak to strong inversion transition factor.

74

flagfp2=0

Flag parameter: GFP=1 or SFP=0.

75

lgfp2=0.0 m

FP Length.

76

vtofp2=(-74.5) V

FP threshold voltage.

77

cgfp2=1.0e-4 F/m²

FP gate-cap/area.

78

flagfp2s=1

Flag parameter: cfp1s select=1 or cfp1s not select=0.

79

cfp2s=1e-19 F/m

FP (source-side) to source cap/width.

80

ccfp2=0.3e-10 F/m

Source or gate to drain (under FP) cap/width.

81

cbfp2=0.0 F/m

Body to drain (under FP) cap/width.

82

vx0fp2=1.2e5 m/s

FP source injection velocity.

83

mu0fp2=0.2 m²/Vs

FP low-field mobility.

84

betafp2=1.00

FP linear to saturation parameter.

85

delta1fp2=0.0

FP DIBL Coefficient.

86

sfp2=3.2 V/dec

FP Sub-threshold slope.

87

ndfp2=0.0

FP punchthrough factor for subth slope.

88

vthetafp2=0.0 1/V

FP scattering: velocity reduction parameter with Vg.

89

mthetafp2=0.0 1/V

FP scattering: mobility reduction parameter with Vg.

90

alphafp2=1e-2

FP weak to strong inversion transition factor.

91

flagfp3=0

Flag parameter: GFP=1 or SFP=0.

92

lgfp3=0.0 m

FP Length.

93

vtofp3=(-44.5) V

FP threshold voltage.

94

cgfp3=2.0e-4 F/m²

FP gate-cap/area.

95

flagfp3s=1

Flag parameter: cfp1s select=1 or cfp1s not select=0.

96

cfp3s=1e-19 F/m

FP (source-side) to source cap/width.

97

ccfp3=0.9e-10 F/m

Source or gate to drain (under FP) cap/width.

98

cbfp3=0.0 F/m

Body to drain (under FP) cap/width.

99

vx0fp3=1.2e5 m/s

FP source injection velocity.

100

mu0fp3=0.2 m²/Vs

FP low-field mobility.

101

betafp3=1.00

FP linear to saturation parameter.

102

delta1fp3=0.0

FP DIBL Coefficient.

103

sfp3=3.2 V/dec

FP Sub-threshold slope.

104

ndfp3=0.0

FP punchthrough factor for subth slope.

105

vthetafp3=0.0 1/V

FP scattering: velocity reduction parameter with Vg.

106

mthetafp3=0.0 1/V

FP scattering: mobility reduction parameter with Vg.

107

alphafp3=1e-2

FP weak to strong inversion transition factor.

108

flagfp4=0

Flag parameter: GFP=1 or SFP=0.

109

lgfp4=0.0 m

FP Length.

110

vtofp4=(-44.5) V

FP threshold voltage.

111

cgfp4=2.0e-4 F/m²

FP gate-cap/area.

112

flagfp4s=1

Flag parameter: cfp1s select=1 or cfp1s not select=0.

113

cfp4s=1e-19 F/m

FP (source-side) to source cap/width.

114

ccfp4=0.9e-10 F/m

Source or gate to drain (under FP) cap/width.

115

cbfp4=0.0 F/m

Body to drain (under FP) cap/width.

116

vx0fp4=1.2e5 m/s

FP source injection velocity.

117

mu0fp4=0.2 m²/Vs

FP low-field mobility.

118

betafp4=1.00

FP linear to saturation parameter.

119

delta1fp4=0.0

FP DIBL Coefficient.

120

sfp4=3.2 V/dec

FP Sub-threshold slope.

121

ndfp4=0.0

FP punchthrough factor for subth slope.

122

vthetafp4=0.0 1/V

FP scattering: velocity reduction parameter with Vg.

123

mthetafp4=0.0 1/V

FP scattering: mobility reduction parameter with Vg.

124

alphafp4=1e-2

FP weak to strong inversion transition factor.

125

igmod=1

Flag parameter for gate leakage 0=off, 1=on.

126

rgsp=0.0 Ohms m

Gate resistance * Width.

127

vjg=1.1 V

Gate diode cut in voltage.

128

pg_param1=820e-3 1/V

Something like 1/eta.

129

pg_params=1.00 1/V

G-S something like 1/eta*Vt.

130

ijs=1.00e-12 A/m

G-S reverse leakage current normalized to width.

131

vgsats=1.00 V

G-S high injection effect.

132

fracs=0.5

G-S fractional change in ideality factor due to high injection.

133

alphags=10.0

G-S high injection smoothing parameter.

134

pg_paramd=1.00 1/V

G-D something like 1/eta*Vt.

135

ijd=1.00e-12 A/m

G-D reverse leakage current normalized to width.

136

vgsatd=1.00 V

G-D high injection effect.

137

fracd=0.5

G-D fractional change in ideality factor due to high injection.

138

alphagd=10.0

G-D high injection smoothing parameter.

139

pgsrecs=0.5

G-S something like 1/eta for reverse recombination.

140

irecs=1.0e-18 A/m

G-S reverse leakage current normalized to width.

141

vgsatqs=2.00 V

G-S mimics depletion saturation.

142

vbdgs=600 V

G-S soft breakdown voltage of G-S diode.

143

pbdgs=4.00 1/V

G-S fitting parameter for breakdown: Something like 1/eta*Vt.

144

betarecs=2.00

G-S linear to saturation parameter.

145

kbdgates=00

G-S fitting parameter to turn on the breakdown of G-S diode.

146

pgsrecd=0.8

G-D something like 1/eta for reverse recombination.

147

irecd=2e-5 A/m

G-D reverse leakage current normalized to width.

148

vgsatqd=0.8 V

G-D mimics depletion saturation.

149

vbdgd=600 V

G-D soft breakdown voltage of G-D diode.

150

pbdgd=4.00 1/V

G-D fitting parameter for breakdown: Something like 1/eta*Vt.

151

betarecd=0.25

G-D linear to saturation parameter.

152

kbdgated=00

G-D fitting parameter to turn on the breakdown of G-D diode.

153

rth=25 K/W

Thermal resistance.

154

cth=1e-4 s W/K

Thermal capacitance.

155

gmdisp=0

Flag parameter for gm-dispersion 0=off, 1=on.

156

taugmrf=1e-3 s

gm-dispersion time constant.

157

trapselect=0

Select knob for charge trapping 0=off, 1=on.

158

ctrap=1e-3 F

DC-block capacitor.

159

vttrap=230 V

Trapping stress threshold voltage.

160

taut=3e-5 s

Trap time constant.

161

alphat1=1e-4

Trap coefficient 1 on bias stress.

162

alphat2=21 V

Trap coefficient 2 on bias stress.

163

tempt=1e-4 1/K

Temperature coefficient for trapping.

164

noisemod=0

Select knob for noise model 0=off, 1=on.

165

shs=3.0

G-S shot noise parameter.

166

shd=3.0

G-D shot noise parameter.

167

kf=1.0e-4

Flicker noise coefficient.

168

af=2.0

Flicker noise exponent.

169

ffe=1.2

Flicker noise exponent for frequency.

170

minr=1.0e-3 Ω

Minimum resistance.

171

minl=1.0e-9 m

Minimum length of access or FP regions for modeling them as transistors.

172

minc=0.0 F

Minimum capacitance.

173

trise=0.0 C

Temperature rise from ambient, alias of dtemp. It served as the default value of instance DTEMP.

1

trise=0 C

Variability in device temperature.

2

dtemp=0.0 C

Device temperature offset from ambient.

3

vgisi (V)

Internal gate-source voltage.

4

vdisi (V)

Internal drain-source voltage.

5

pdc (W)

Total power dissipation from the device.

6

idisi (A)

Drain-to-source current in intrinsic transistor.

7

igs (A)

Gate-source gate-leakage current.

8

igd (A)

Gate-drain gate-leakage current.

9

qgi (C)

Intrinsic gate charge.

10

qdi (C)

Intrinsic drain charge.

11

qsi (C)

Intrinsic source charge.

12

qbi (C)

Intrinsic body charge.

13

gmi (A/V)

Intrinsic transconductance.

14

gdsi (A/V)

Intrinsic output-conductance.

15

gmbsi (A/V)

Intrinsic body-transconductance.

16

cggi (F)

Intrinsic gate-gate capacitance.

17

cgdi (F)

Intrinsic gate-drain capacitance.

18

cgsi (F)

Intrinsic gate-source capacitance.

19

cgbi (F)

Intrinsic gate-body capacitance.

20

cdgi (F)

Intrinsic drain-gate capacitance.

21

cddi (F)

Intrinsic drain-drain capacitance.

22

cdsi (F)

Intrinsic drain-source capacitance.

23

cdbi (F)

Intrinsic drain-body capacitance.

24

csgi (F)

Intrinsic source-gate capacitance.

25

csdi (F)

Intrinsic source-drain capacitance.

26

cssi (F)

Intrinsic source-source capacitance.

27

csbi (F)

Intrinsic source-body capacitance.

28

cbgi (F)

Intrinsic body-gate capacitance.

29

cbdi (F)

Intrinsic body-drain capacitance.

30

cbsi (F)

Intrinsic body-source capacitance.

31

cbbi (F)

Intrinsic body-body capacitance.

32

cgs (F)

Gate-to-source fringing capacitance.

33

cgd (F)

Gate-to-drain fringing capacitance.

34

t_total_k (K)

Actual device temperature in Kelvin.

35

t_total_c (deg C)

Actual device temperature in Celsius.

36

t_delta_sh (K)

Change in device temperature caused by self-heating.

37

rs (Ω)

Resistance of source access region.

38

rd (Ω)

Resistance of drain access region.

39

per (W)

Power at op point.

af      M-168

cofdsm      M-7

lgfp2      M-75

sfp3      M-103

alpha      M-23

cofdsubm      M-8

lgfp3      M-92

sfp4      M-120

alphafp1      M-73

cofgsubm      M-10

lgfp4      M-109

shd      M-166

alphafp2      M-90

cofsm      M-5

lgs      M-33

shs      M-165

alphafp3      M-107

cofssubm      M-9

m      I-1

srd      M-52

alphafp4      M-124

csbi      OP-27

minc      M-172

srs      M-40

alphagd      M-138

csdi      OP-25

minl      M-171

ss      M-18

alphags      M-133

csgi      OP-24

minr      M-170

t_delta_sh      OP-36

alphard      M-56

cssi      OP-26

mtheta      M-26

t_total_c      OP-35

alphars      M-44

cth      M-154

mthetafp1      M-72

t_total_k      OP-34

alphat1      M-161

ctrap      M-158

mthetafp2      M-89

taugmrf      M-156

alphat2      M-162

delta1      M-19

mthetafp3      M-106

taut      M-160

beta      M-16

delta1fp1      M-68

mthetafp4      M-123

tempt      M-163

betafp1      M-67

delta1fp2      M-85

mthetard      M-55

tnom      M-2

betafp2      M-84

delta1fp3      M-102

mthetars      M-43

trapselect      M-157

betafp3      M-101

delta1fp4      M-119

mu0      M-15

trise      I-5

betafp4      M-118

delta1rd      M-51

mu0fp1      M-66

trise      M-173

betard      M-50

delta1rs      M-39

mu0fp2      M-83

trise      OP-1

betarecd      M-151

delta2      M-20

mu0fp3      M-100

type      M-3

betarecs      M-144

dibsat      M-21

mu0fp4      M-117

vbdgd      M-149

betars      M-38

dtemp      I-6

mu0rd      M-49

vbdgs      M-142

cbbi      OP-31

dtemp      OP-2

mu0rs      M-37

vdisi      OP-4

cbdi      OP-29

epsilon      M-29

nd      M-22

version      M-1

cbfp1      M-64

ffe      M-169

ndfp1      M-70

vgisi      OP-3

cbfp2      M-81

flagfp1      M-57

ndfp2      M-87

vgsatd      M-136

cbfp3      M-98

flagfp1s      M-61

ndfp3      M-104

vgsatqd      M-148

cbfp4      M-115

flagfp2      M-74

ndfp4      M-121

vgsatqs      M-141

cbgi      OP-28

flagfp2s      M-78

ndrd      M-53

vgsats      M-131

cbsi      OP-30

flagfp3      M-91

ndrs      M-41

vjg      M-127

ccfp1      M-63

flagfp3s      M-95

ngf      I-4

vtheta      M-25

ccfp2      M-80

flagfp4      M-108

noisemod      M-164

vthetafp1      M-71

ccfp3      M-97

flagfp4s      M-112

pbdgd      M-150

vthetafp2      M-88

ccfp4      M-114

flagres      M-32

pbdgs      M-143

vthetafp3      M-105

cdbi      OP-23

fracd      M-137

pdc      OP-5

vthetafp4      M-122

cddi      OP-21

fracs      M-132

pg_param1      M-128

vthetard      M-54

cdgi      OP-20

gdsi      OP-14

pg_paramd      M-134

vthetars      M-42

cdsi      OP-22

gmbsi      OP-15

pg_params      M-129

vto      M-17

cfp1s      M-62

gmdisp      M-155

pgsrecd      M-146

vtofp1      M-59

cfp2s      M-79

gmi      OP-13

pgsrecs      M-139

vtofp2      M-76

cfp3s      M-96

idisi      OP-6

pwr      OP-39

vtofp3      M-93

cfp4s      M-113

igd      OP-8

qbi      OP-12

vtofp4      M-110

cg      M-4

igmod      M-125

qdi      OP-10

vtord      M-46

cgbi      OP-19

igs      OP-7

qgi      OP-9

vtors      M-34

cgd      OP-33

ijd      M-135

qsi      OP-11

vttrap      M-159

cgdi      OP-17

ijs      M-130

rcd      M-13

vtzeta      M-28

cgfp1      M-60

irecd      M-147

rcs      M-12

vx0      M-14

cgfp2      M-77

irecs      M-140

rct1      M-30

vx0fp1      M-65

cgfp3      M-94

isnoisy      I-7

rct2      M-31

vx0fp2      M-82

cgfp4      M-111

kbdgated      M-152

rd      OP-38

vx0fp3      M-99

cggi      OP-16

kbdgates      M-145

rgsp      M-126

vx0fp4      M-116

cgrd      M-47

kf      M-167

rs      OP-37

vx0rd      M-48

cgrs      M-35

l      I-3

rsh      M-11

vx0rs      M-36

cgs      OP-32

lambda      M-24

rth      M-153

vzeta      M-27

cgsi      OP-18

lgd      M-45

sfp1      M-69

w      I-2

cofdm      M-6

lgfp1      M-58

sfp2      M-86