mult=1

Number of devices in parallel.

l=2e-06 m

Drawn channel length in the layout. Scale set by option scale.

w=1e-05 m

Drawn channel width in the layout. Scale set by option scale.

printscaled=0

Print scaled parameter info if value not equal to zero.

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

m=1

alias of mult.

mos_region=SUBTHRESHOLD

diode_region=ON

trise=0

Temperature rise from ambient.

level=1.1e+03

MOS Level.

paramchk=0

Level of clip warning info.

ler=1e-06 m

Effective channel length of the reference transistor.

wer=1e-05 m

Effective channel width of the reference transistor.

lvar=0 m

Difference between the actual and the programmed poly-silicon gate length.

lap=4e-08 m

Effective channel length reduction per side.

wvar=0 m

Difference between the actual and the programmed field-oxide opening.

wot=0 m

Effective channel width reduction per side.

tr=21 C

Reference temperature. Default set by option tnom.

vfbr=-1.05 V

Flat-band voltage for reference transistor.

stvfb=0.0005 V/K

Coefficient of temperature dependence of vfb.

kor=0.5 V

Body effect coefficient for the reference transistor.

slko=0 V  m

Coefficient of the length dependence of ko.

sl2ko=0 V  m²

Second coefficient of the length dependence of ko.

swko=0 V  m

Coefficient of the width dependence of ko.

kpinv=0 1/V

Inverse of body-effect factor of the poly-silicon gate.

phibr=0.95 V

Surface potential at strong inversion.

slphib=0 Vm

Coefficient of the length dependence of phib.

sl2phib=0 Vm²

Second coefficient of the length dependence of phib.

swphib=0 Vm

Coefficient of the width dependence of phib.

betsq=0.000371(n)/0.000115(p) A/V²

Gain factor for an infinite square transistor.

etabet=1.3(n)/0.5(p)

Exponent of the temperature dependence of the gain factor.

fbet1=0

Relative mobility decrease due to first lateral profile.

lp1=8e-07 m

Characteristic length of first lateral profile.

fbet2=0

Relative mobility decrease due to second lateral profile.

lp2=8e-07 m

Characteristic length of second lateral profile.

thesrr=0.4(n)/0.73(p) 1/V

Coefficient of the mobility reduction due to surface roughness scattering.

swthesr=0 m

Coefficient of the width dependence of thesr.

thephr=0.0129(n)/0.001(p) 1/V

Coefficient of the mobility reduction due to phonon scattering.

etaph=1.75

Exponent of the temperature dependence of theph.

swtheph=0 m

Coefficient of the width dependence of theph.

etamobr=1.4(n)/3(p)

Effective field parameter for dependence on depletion/inversion charge.

stetamob=0 1/K

Coefficient of the temperature dependence of etamob.

swetamob=0 m

Coefficient of the width dependence of etamob.

nur=1

Exponent of the field dependence of the mobility model minus 1.

nuexp=5.25(n)/3.23(p)

Exponent of the temperature dependence of parameter nu.

therr=0.155(n)/0.08(p) 1/V

Coefficient of the series resistance.

etar=0.95(n)/0.4(p)

Exponent of the temperature dependence of ther.

swther=0 m

Coefficient of the width dependence of ther.

ther1=0 V

Numerator of gate voltage dependent part of series resistance.

ther2=1 V

Denominator of gate voltage dependent part of series resistance.

thesatr=0.5(n)/0.2(p) 1/V

Velocity saturation parameter due to optical/acoustic phonon scattering.

slthesat=1

Coefficient of length dependence of thesat.

thesatexp=1

Exponent of length dependence of thesat.

etasat=1.04(n)/0.86(p)

Exponent of the temperature dependence of thesat.

swthesat=0 m

Coefficient of the width dependence of thesat.

thethr=0.001(n)/0.0005(p) 1/V³

Coefficient of self-heating.

thethexp=1

Exponent of the length dependence of theth.

swtheth=0 m

Coefficient of the width dependence of theth.

sdiblo=0.002(n)/0.001(p) 1/V

Drain-induced barrier lowering parameter.

sdiblexp=1.35

Exponent of the length dependence of sdibl.

mor=0

Parameter for short-channel subthreshold slope.

moexp=1.34

Exponent of the length dependence of mo.

ssfr=0.00625 1/V

Static feedback parameter.

slssf=1e-06 m

Coefficient of the length dependence of ssf.

swssf=0 m

Coefficient of the width dependence of ssf.

alpr=0.01

Factor of the channel length modulation.

slalp=1

Coefficient of the length dependence of alp.

alpexp=1

Exponent of the length dependence of alp.

swalp=0 m

Coefficient of the width dependence of alp.

vp=0.05 V

Characteristic voltage of channel-length modulation.

lmin=1.5e-07 m

Minimum effective channel length in technology, used for calculation of smoothing factor m.

a1r=6

Factor of the weak-avalanche current.

sta1=0 1/K

Coefficient of the temperature dependence of a1.

sla1=0 m

Coefficient of the length dependence of a1.

swa1=0 m

Coefficient of the width dependence of a1.

a2r=38 V

Exponent of the weak-avalanche current.

sla2=0 V m

Coefficient of the length dependence of a2.

swa2=0 V m

Coefficient of the width dependence of a2.

a3r=1

Factor of the drain-source voltage above which weak-avalanche occurs.

sla3=0 m

Coefficient of the length dependence of a3.

swa3=0 m

Coefficient of the width dependence of a3.

iginvr=0 A/V²

Gain factor for intrinsic gate tunneling current in inversion.

binv=48(n)/87.5(p) A/V²

Probability factor for intrinsic gate tunneling current in inversion.

igaccr=0 A/V²

Gain factor for intrinsic gate tunneling current in accumulation.

bacc=48 V

Probability factor for intrinsic gate tunneling current in accumulation.

vfbov=0 V

Flat-band voltage for the Source/Drain overlap extensions.

kov=2.5 V

Body-effect factor for the Source/Drain overlap extensions.

igovr=0 A/V²

Gain factor for Source/Drain overlap gate tunneling current.

tox=3.2e-09 m

Thickness of gate oxide layer.

col=3.2e-10 F/m

Gate overlap capacitance per unit channel width.

gatenoise=0

Flag for in/exclusion of induced gate thermal noise.

ntr=1.66e-20 J

Coefficient of the thermal noise.

nfar=1.57e+22(n)/3.83e+23(p) 1/(Vm⁴)

First coefficient of the flicker noise.

nfbr=4.75e+08(n)/1.02e+08(p) 1/(Vm²)

Second coefficient of the flicker noise.

nfcr=0(n)/7.3e-09(p) 1/V

Third coefficient of the flicker noise.

dta=0 K

Temperature offset of the device.

type=n

Transistor gender. Possible values are n and p.

imax=1000 A

Explosion current.

vbox=0.0 V

Oxide breakdown voltage.

vbds=0.0 V

Drain-source breakdown voltage.

tnom (C)

alias of tnom.

tref (C)

alias of tnom.

vfb (V)

Flat-band voltage for the actual transistor.

ko (V )

Body-effect factor.

kpinv (1/V )

Inverse of body-effect factor of the poly-silicon gate.

phib (V)

Surface potential at the onset of strong inversion.

bet (A/V²)

Gain factor.

thesr (1/V)

Mobility degradation parameter due to surface roughness scattering.

theph (1/V)

Mobility degradation parameter due to phonon scattering.

etamob

Effective field parameter for dependence on depletion charge.

nu

Exponent of field dependence of mobility model.

ther (1/V)

Coefficient of series resistance.

ther1 (V)

Numerator of gate voltage dependent part of series resistance.

ther2 (V)

Denominator of gate voltage dependent part of series resistance.

thesat (1/V)

Velocity saturation parameter due to optical/acoustic phonon scattering.

theth (1/V³)

Coefficient of self-heating.

sdibl (1/V )

Drain-induced barrier lowering parameter.

mo (V)

Parameter for (short-channel) subthreshold slope.

ssf (1/V )

Static-feedback parameter.

alp

Factor of channel length modulation.

vp (V)

Characteristic voltage of channel-length modulation.

mexp

Smoothing factor.

phit (V)

Thermal voltage at the actual temperature.

a1

Factor of the weak-avalanche current.

a2 (V)

Exponent of the weak-avalanche current.

a3

Factor of the drain-source voltage above which weak-avalanche occurs.

iginv (A/V²)

Gain factor for intrinsic gate tunneling current in inversion.

binv (A/V²)

Probability factor for intrinsic gate tunneling current in inversion.

igacc (A/V²)

Gain factor for intrinsic gate tunneling current in accumulation.

bacc (V)

Probability factor for intrinsic gate tunneling current in accumulation.

vfbov (V)

Flat-band voltage for the Source/Drain overlap extensions.

kov (V )

Body-effect factor for the Source/Drain overlap extensions.

igov (A/V²)

Gain factor for Source/Drain overlap tunneling current.

cox (F)

Oxide capacitance for the intrinsic channel (* mult).

cgdo (F)

Oxide capacitance for the gate-drain overlap (* mult).

cgso (F)

Oxide capacitance for the gate-source overlap (* mult).

gatenoise

Flag for in/exclusion of induced gate thermal noise.

nt (J)

Thermal noise coefficient.

nfa (1/(Vm⁴))

First coefficient of the flicker noise.

nfb (1/(Vm²))

Second coefficient of the flicker noise.

nfc (1/V)

Third coefficient of the flicker noise.

tox (m)

Thickness of gate oxide layer.

int_s

int_d

ids (A)

Drain current, excluding avalanche and tunnel currents.

iavl (A)

Substrate current due to weak-avalanche.

igs (A)

Gate-to-source current due to direct tunneling.

igd (A)

Gate-to-drain current due to direct tunneling.

igb (A)

Gate-to-bulk current due to direct tunneling.

vds (V)

Drain-source voltage.

vgs (V)

Gate-source voltage.

vsb (V)

Source-bulk voltage.

vto (V)

Zero-bias threshold voltage.

vts (V)

Threshold voltage including back-bias effects.

vth (V)

Threshold voltage including back-bias and drain-bias effects.

vgt (V)

Effective gate drive voltage including back-bias and drain voltage effects.

vdss (V)

Drain saturation voltage at actual bias.

vsat (V)

Saturation limit.

gm (A/V)

Transconductance (d ids / d vgs).

gmb (A/V)

Substrate-transconductance (d ids / d vbs).

gds (A/V)

Output conductance (d ids / d vds).

cdd (F)

Capacitance (d qd / d vd).

cdg (F)

Capacitance (- d qd / d vg).

cds (F)

Capacitance (- d qd / d vs).

cdb (F)

Capacitance (- d qd / d vb).

cgd (F)

Capacitance (- d qg / d vd).

cgg (F)

Capacitance (d qg / d vg).

cgs (F)

Capacitance (- d qg / d vs).

cgb (F)

Capacitance (- d qg / d vb).

csd (F)

Capacitance (- d qs / d vd).

csg (F)

Capacitance (- d qs / d vg).

css (F)

Capacitance (d qs / d vs).

csb (F)

Capacitance (- d qs / d vb).

cbd (F)

Capacitance (- d qb / d vd).

cbg (F)

Capacitance (- d qb / d vg).

cbs (F)

Capacitance (- d qb / d vs).

cbb (F)

Capacitance (d qb / d vb).

cgdol (F)

Gate-drain overlap capacitance of the actual transistor.

cgsol (F)

Gate-source overlap capacitance of the actual transistor.

weff (m)

Effective channel width for geometrical models.

leff (m)

Effective channel length for geometrical models.

u

Transistor gain (gm/gds).

rout (Ω)

Small-signal output resistance (1/gds).

vearly (V)

Equivalent Early voltage (|id|/gds).

keff (V )

Body effect parameter.

beff (A/V²)

Gain factor.

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cin)).

sqrtsfw (V/Hz )

Input-referred RMS white noise voltage density.

sqrtsff (V/Hz )

Input-referred RMS white noise voltage density at 1 kHz.

fknee (Hz)

Cross-over frequency above which white noise is dominant.

table_ids (A)

Current.

table_vth (V)

Threshold voltage including back-bias and drain-bias effects.

table_qg (Coul)

Charge at g node.

table_qd (Coul)

Charge at d node.

table_qb (Coul)

Charge at b node.

mos_region=SUBTHRESHOLD

diode_region=ON