Compact MOS-Transistor Distortion Model (mos1000)
The mos10.00 model is an experimental model based on the thesis of Ronald van Langevelde: "A compact MOSFET Model for Distortion Analysis in Analog Circuit Design", Technische Universiteit Eindhoven, 1998.
Note: In noise analysis, mos10.00 instances will not generate any contribution, since there are no noise sources included (yet) in the mos10.00 model.
(c) Philips Electronics N.V. 1999
In extension to the description, a minimum conductance gmin is inserted between the drain and source node to aid convergence. The value of gmin is set by an options statement, default = 1e-12 S.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so.
Instance Syntax
Name d g s [b] ModelName parameter=value ...
Instance Parameters
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w=1.0 scale m
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Drawn channel width in the layout. Scale set by option scale.
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l=1.0 scale m
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Drawn channel length in the layout. Scale set by option scale.
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mult=1
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Number of devices in parallel.
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area=1
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Alias of mult.
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region=triode
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Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.
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m=1
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Multiplicity factor.
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trise=0 K
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Temperature rise from ambient.
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Model Syntax
model modelName mos1000 parameter=value ...
Model Parameters
Device type parameters
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type=n
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Transistor gender. Possible values are n and p.
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Geometry parameters
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ler=1.0e-6 m
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Effective channel length of the reference transistor.
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wer=1e-6 m
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Effective channel width of the reference transistor.
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lvar=0.0 m
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Difference between the actual and the programmed poly-silicon gate length.
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lap=45.0e-9 m
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Effective channel length reduction per side.
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wvar=-5.0e-9 m
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Difference between the actual and the programmed field-oxide opening.
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wot=50.0e-9 m
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Effective channel width reduction per side.
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Threshold-voltage parameters
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vfbr=-518.9e-03 V
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Flat-band voltage for reference transistor.
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stvfb=-1.2e-03 V/K
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Coefficient of temperature dependence of vfb.
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slvfb=24.0e-09 V m
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Coefficient of length dependence of vfb.
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sl2vfb=-1.1e-15 V m2
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Second coefficient of length dependence of vfb.
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swvfb=4.400e-09 V m
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Coefficient of the width dependency of vfb.
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kor=368.0e-03 V
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Body effect coefficient for the reference transistor.
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slko=-8.240e-09 V m
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Coefficient of the length dependence of ko.
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sl2ko=-2.260e-15 V m2
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Second coefficient of the length dependence of ko.
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swko=5.86e-09 V m
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Coefficient of the width dependence of ko.
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phibr=0.6 V
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Surface potential at strong inversion.
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Channel-current parameters
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betsq=370.9e-06 A/V2
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Gain factor for an infinite square transistor.
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etabet=1.6
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Exponent of the temperature dependence of the gain factor.
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thesrr=16.10e-3 1/V2
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Mobility degradation parameter due to surface roughness scattering.
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stthesr=0.0 1/(V2 K)
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Coefficient of the temperature dependence of thesr.
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swthesr=0.0 1/(V2 m)
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Coefficient of the width dependence of thesr.
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thephr=0.055 1/V
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Mobility degradation parameter due to phonon scattering.
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sttheph=0.0 1/(V K)
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Coefficient of the temperature dependence of theph.
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swtheph=0.0 1/(V m)
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Coefficient of the width dependence of theph.
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etamobr=1.6
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Effective field parameter for dependence on depletion charge.
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swetamob=0.0 1/m
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Coefficient of the width dependence of etamobr.
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thersq=0.155 1/V
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Coefficient of gate voltage independent part of series resistance.
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swther=0.0 1/(V m)
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Coefficient of the width dependence of ther.
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ther1=0.0 V
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Numerator of gate voltage independent part of series resistance.
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ther2=1.0 V
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Denominator of gate voltage independent part of series resistance.
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thenr=0.480 1/V
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Velocity saturation parameter due to optical phonon scattering.
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stthen=0.0 1/(V K)
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Coefficient of the temperature dependence of then.
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swthen=0.0 1/(V m)
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Coefficient of the width dependence of then.
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thepr=0.0 1/V
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Velocity saturation parameter due to acoustic phonon scattering.
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stthep=0.0 1/(V K)
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Coefficient of the temperature dependence of thep.
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swthep=0.0 1/(V m)
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Coefficient of the width dependence of thep.
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gthep=1.0
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Velocity saturation factor due to acoustic phonon scattering.
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thethr=3.227e-3 1/V3
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Coefficient of self-heating.
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sltheth=2.460e-9 1/(V3 m)
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Coefficient of the length dependence of theth.
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swtheth=0.0 1/(V3 m)
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Coefficient of the width dependence of theth.
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Sub-threshold parameters
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sdiblo=2.030e-03 1/V
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Drain-induced barrier lowering parameter.
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sdiblexp=1.340
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Exponent of the length dependence of sdibl.
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dphi=0.800 V
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Parameter for short-channel subthreshold behavior.
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Saturation parameters
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ssfsq=6.250e-03 1/V
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Static feedback parameter.
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swssf=0.0 1/(V m)
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Coefficient of the width dependence of ssf.
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alpsq=0.010 m
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Characteristic length parameter for channel length modulation.
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swalp=0.0 m
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Coefficient of the width dependence of alp.
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vp=0.075 V
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Characteristic voltage of channel-length modulation.
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Smoothing parameters
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mexpo=0.093
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Smoothing factor.
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mexpl=0.065
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Coefficient of the length dependence of mexp.
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Weak-avalanche parameters
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a1r=6
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Factor of the weak-avalanche current.
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sta1=0.0 1/K
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Coefficient of the temperature dependence of a1.
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sla1=1.30e-6 m
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Coefficient of the length dependence of a1.
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swa1=3.0e-06 m
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Coefficient of the width dependence of a1.
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a2r=38.0 V
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Exponent of the weak-avalanche current.
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sla2=1.00e-06 V m
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Coefficient of the length dependence of a2.
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swa2=2.00e-06 V m
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Coefficient of the width dependence of a2.
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a3r=0.650
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Factor of the drain-source voltage above which weak-avalanche occurs.
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sla3=-550.0e-06 m
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Coefficient of the length dependence of a3.
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swa3=0.0 m
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Coefficient of the width dependence of a3.
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Charge parameters
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tox=4.5e-09 m
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Thickness of the oxide layer.
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col=320e-12 F/m
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Gate overlap capacitance per unit channel width.
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Temperature parameters
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tr (C)
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Reference temperature. Default set by option tnom.
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tref (C)
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Alias of tr. Default set by option tnom.
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tnom (C)
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Alias of tr. Default set by option tnom.
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dta=0.0 K
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Temperature offset of the device. It served as the default value of instance trise.
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trise=0.0 K
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Alias of dta.
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Output Parameters
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le (m)
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Effective channel length.
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we (m)
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Effective channel width.
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vfb (V)
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Flat-band voltage.
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ko (V )
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Body effect coefficient.
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phib (V)
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Surface potential at strong inversion.
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bet (A/V2)
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Gain factor.
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thesr (1/V2)
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Mobility degradation parameter due to surface roughness scattering.
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theph (1/V)
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Mobility degradation parameter due to phonon scattering.
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etamob
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Effective field parameter for dependence on depletion charge.
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ther (1/V)
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Coefficient of gate voltage independent part of series resistance.
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ther1 (V)
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Numerator of gate voltage independent part of series resistance.
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ther2 (V)
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Denominator of gate voltage independent part of series resistance.
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then (1/V)
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Velocity saturation parameter due to optical phonon scattering.
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thep (1/V)
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Velocity saturation parameter due to acoustic phonon scattering.
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gthep
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Velocity saturation factor due to acoustic phonon scattering.
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theth (1/V3)
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Coefficient of self-heating.
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sdibl (1/V )
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Drain-induced barrier lowering parameter.
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dphi (V)
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Parameter for short-channel subthreshold behavior.
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ssf (1/V )
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Static feedback parameter.
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alp (m)
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Characteristic length parameter for channel length modulation.
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vp (V)
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Characteristic voltage of channel-length modulation.
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mexp
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Smoothing factor.
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phit (V)
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Thermal voltage.
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a1
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Factor of the weak-avalanche current.
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a2 (V)
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Exponent of the weak-avalanche current.
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a3
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Factor of the drain-source voltage above which weak-avalanche occurs.
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cox (F)
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Gate-to-channel capacitance (* mult).
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cgdo (F)
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Gate-drain overlap capacitance (* mult).
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cgso (F)
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Gate-source overlap capacitance (* mult).
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Operating-Point Parameters
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ide (A)
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Resistive drain current.
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ige (A)
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Resistive gate current.
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ise (A)
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Resistive source current.
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ibe (A)
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Resistive bulk current.
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vds (V)
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Drain-source voltage.
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vgs (V)
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Gate-source voltage.
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vsb (V)
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Source-bulk voltage.
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ids (A)
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Resistive drain current.
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idb (A)
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Resistive drain-bulk current.
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isb (A)
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Resistive source-bulk current.
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iavl (A)
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Substrate current.
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pwr (W)
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Power.
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vto (V)
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Threshold voltage at zero back-bias.
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vts (V)
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Vts.
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vgt (V)
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Effective gate drive including backbias and drain effects.
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vdss (V)
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Saturation voltage at actual bias.
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vsat (V)
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Saturation limit.
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gm (S)
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Transconductance (d ids / d vgs).
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gmb (S)
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Bulk transconductance (d ids / d vbs).
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gds (S)
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Output conductance (d ids / d vds).
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cdd (F)
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Capacitance (d qd / d vd).
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cdg (F)
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Capacitance (- d qd / d vg).
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cds (F)
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Capacitance (- d qd / d vs).
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cdb (F)
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Capacitance (- d qd / d vb).
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cgd (F)
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Capacitance (- d qg / d vd).
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cgg (F)
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Capacitance (d qg / d vg).
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cgs (F)
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Capacitance (- d qg / d vs).
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cgb (F)
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Capacitance (- d qg / d vb).
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csd (F)
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Capacitance (- d qs / d vd).
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csg (F)
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Capacitance (- d qs / d vg).
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css (F)
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Capacitance (d qs / d vs).
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csb (F)
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Capacitance (- d qs / d vb).
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cbd (F)
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Capacitance (- d qb / d vd).
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cbg (F)
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Capacitance (- d qb / d vg).
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cbs (F)
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Capacitance (- d qb / d vs).
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cbb (F)
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Capacitance (d qb / d vb).
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u
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Transistor gain (gm/gds).
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rout (Ω)
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Small signal output resistance (1/gds).
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vearly (V)
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Equivalent Early voltage (|id|/gds).
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keff (V )
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Describes body effect at actual bias.
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beff (S/V)
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Effective beta at actual bias in the simple MOS model (2*|ids|/vgt2^2).
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fug (Hz)
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Unity gain frequency at actual bias (gm/(2*pi*cin)).
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Related Topics
Philips Models
Compact MOS-Transistor Distortion Model (mos1100)
Compact MOS-Transistor Distortion Model (mos1100e)
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