Compact MOS-Transistor Model (mos902)
The mos902 model is a compact MOS-transistor model, intended for the simulation of circuit behavior with emphasis on analog applications. It is described in the Philips MOST Modelbook (Feb.98) as MOS model, level 902. Information on how to obtain this document can be found on Source Link by searching for Philips.
(c) Philips Electronics N.V. 1993, 1998
In extension to the model book description, a minimum conductance gmin is inserted between the drain and source node to aid convergence. The value of gmin is set by an options statement, default = 1e-12 S.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so.
Sample Instance Statement:
mp1 (0 1 2 2) mos9pch w=10u l=2u area=1.5
Sample Model Statement:
model mos9pch mos902 ler=0.93e-6 wer=20e-6 tref=27 vtor=1.11 kr=0.54 phibr=0.66 vsbxr=100 the1r=0.19 slk=-0.215e-6 swk=98e-9 swthe3=7.8e-9
Instance Syntax
Name d g s [b] ModelName parameter=value ...
Instance Parameters
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w=1.0 scale m
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Drawn channel width in the lay-out. Scale set by option scale.
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l=1.0 scale m
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Drawn channel length in the lay-out. Scale set by option scale.
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mult=1
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Number of devices in parallel.
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area=1
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Alias of mult.
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region=triode
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Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, or subth.
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m=1
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Multiplicity factor.
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trise=0 K
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Temperature rise from ambient.
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Model Syntax
model modelName mos902 parameter=value ...
Model Parameters
Device type parameters
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type=n
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Transistor gender. Possible values are n or p.
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Geometry parameters
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ler=2.5e-6 m
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Effective channel length of the reference transistor.
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wer=25e-6 m
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Effective channel width of the reference transistor.
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lvar=0.3e-6 m
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Difference between the actual and the programmed poly-silicon gate length.
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lap=0.1e-6 m
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Effective channel length reduction per side.
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wvar=3e-6 m
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Difference between the actual and the programmed field-oxide opening.
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wot=1e-6 m
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Effective channel width reduction per side.
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wdog=0 m
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Characteristic drawn gate width, below which dogboning appears.
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Threshold-voltage parameters
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vtor=0.8 V
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Threshold voltage at zero back-bias.
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stvto=0.01 V/K
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Coefficient of the temperature dependence of vto.
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slvto=0.5e-6 V m
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Coefficient of the length dependence of vto.
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sl2vto=0 V m2
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Second coefficient of the length dependence of vto.
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swvto=5e-6 V m
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Coefficient of the width dependence of vto.
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kor=0.5 √V
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Low-backbias body factor.
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slko=1e-6 √V m
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Coefficient of the length dependence of ko.
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swko=10e-6 √V m
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Coefficient of the width dependence of ko.
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kr=0.1 √V
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High-backbias body factor.
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slk=0.5e-6 √V m
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Coefficient of the length dependence of k.
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swk=5e-6 √V m
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Coefficient of the width dependence of k.
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phibr=0.65 V
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Surface potential at strong inversion.
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vsbxr=0.9 V
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Transition voltage for the dual-k-factor model.
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slvsbx=0.5e-6 V m
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Coefficient of the length dependence of vsbx.
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swvsbx=5e-6 V m
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Coefficient of the width dependence of vsbx.
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Channel-current parameters
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betsq=0.1e-3 A/V2
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Gain factor for an infinite square transistor.
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etabet=0.5
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Exponent of the temperature dependence of the gain factor.
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the1r=0.05 1/V
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Coefficient of the mobility reduction due to the gate-induced field.
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stthe1r=3e-3 1/(V K)
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Coefficient of the temperature dependence of the1.
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slthe1r=50e-9 m/V
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Coefficient of the length dependence of the1.
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stlthe1=5e-9 m/(V K)
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Coefficient of the temperature dependence of slthe1.
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swthe1=1e-6 m/V
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Coefficient of the width dependence of the1.
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fthe1=0
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Coefficient describing the width dependence of the1 for w < wdog.
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the2r=17e-3 1/√V
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Coefficient of the mobility reduction due to the back-bias.
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stthe2r=0.1e-3 1/(√V K)
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Coefficient of the temperature dependence of the2.
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slthe2r=5e-9 m/√V
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Coefficient of the length dependence of the2.
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stlthe2=0.5e-9 m/(√V K)
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Coefficient of the temperature dependence of slthe2.
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swthe2=0.1e-6 m/√V
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Coefficient of the width dependence of the2.
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the3r=37e-3 1/V
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Coefficient of the mobility reduction due to the lateral field.
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stthe3r=0.1e-3 1/(V K)
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Coefficient of the temperature dependence of the3.
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slthe3r=5e-9 m/V
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Coefficient of the length dependence of the3.
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stlthe3=0.5e-9 m/(V K)
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Coefficient of the temperature dependence of slthe3.
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swthe3=0.1e-6 m/V
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Coefficient of the width dependence of the3.
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Drain-feedback parameters
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gam1r=40e-3 V^(1-etads)
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Coefficient for the drain induced threshold shift for large gate drive.
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slgam1=0.1e-6 V^(1-etads) m
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Coefficient of the length dependence of gam1.
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swgam1=1e-6 V^(1-etads) m
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Coefficient of the width dependence of gam1.
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etadsr=0.6
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Exponent of the vds dependence of gam1.
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alpr=4e-3
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Factor of the channel-length modulation.
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etaalp=0.5
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Exponent of the length dependence of alp.
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slalp=0.14e-3 m^etaalp
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Coefficient of the length dependence of alp.
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swalp=0.1e-6 m
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Coefficient of the width dependence of alp.
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vpr=0.25 V
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Characteristic voltage of the channel-length modulation.
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Sub-threshold parameters
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gamoor=1.1e-3
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Coefficient for the drain induced threshold shift at zero gate drive.
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slgamoo=10e-15 m2
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Coefficient of the length dependence of gamoo.
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etagamr=2
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Exponent of the back-bias dependence of gamo.
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mor=0.3
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Factor for the subthreshold slope.
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stmo=0.01 1/K
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Coefficient of the temperature dependence of mo.
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slmo=1.4e-3 √m
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Coefficient of the length dependence of mo.
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etamr=2
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Exponent of the back-bias dependence of m.
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zet1r=0.7
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Weak-inversion correction factor.
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etazet=0.5
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Exponent of the length dependence of zet1.
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slzet1=0.14e-6 m^etazet
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Coefficient of the length dependence of zet1.
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vsbtr=99 V
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Limiting voltage of the vsb dependence of m and gamo.
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slvsbt=10e-6 V m
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Coefficient of the length dependence of vsbt.
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Weak-avalanche parameters
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a1r=22
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Factor of the weak-avalanche current.
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sta1=0.1 1/K
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Coefficient of the temperature dependence of a1.
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sla1=10e-6 m
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Coefficient of the length dependence of a1.
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swa1=0.1e-3 m
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Coefficient of the width dependence of a1.
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a2r=33 V
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Exponent of the weak-avalanche current.
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sla2=10e-6 V m
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Coefficient of the length dependence of a2.
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swa2=0.1e-3 V m
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Coefficient of the width dependence of a2.
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a3r=0.6
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Factor of the drain-source voltage above which weak-avalanche occurs.
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sla3=1e-6 m
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Coefficient of the length dependence of a3.
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swa3=10e-6 m
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Coefficient of the width dependence of a3.
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Charge parameters
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tox=20e-9 m
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Thickness of the oxide layer.
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col=50e-12 F/m
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Gate overlap capacitance per unit channel width.
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Noise parameters
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ntr=21e-21 J
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Coefficient of the thermal noise.
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nfr=16e-12 V2
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Coefficient of the flicker noise.
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Temperature parameters
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tr (C)
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Reference temperature. Default set by option tnom.
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tref (C)
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Alias of tr. Default set by option tnom.
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tnom (C)
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Alias of tr. Default set by option tnom.
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dta=0 K
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Temperature offset of the device.
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trise=0 K
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Alias of dta.
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Output Parameters
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le (m)
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Effective channel length.
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we (m)
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Effective channel width.
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vto (V)
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Threshold voltage at zero back-bias.
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ko (√V )
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Low-backbias body factor.
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k (√V )
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High-backbias body factor.
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phib (V)
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Surface potential at strong inversion.
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vsbx (V)
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Transition voltage for the dual-k-factor model.
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bet (A/V2)
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Gain factor (* mult).
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the1 (1/V)
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Coefficient of the mobility reduction due to the gate-induced field.
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the2 (1/√V )
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Coefficient of the mobility reduction due to the back-bias.
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the3 (1/V)
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Coefficient of the mobility reduction due to the lateral field.
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gam1 (V^(1-etads))
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Coefficient for the drain induced threshold shift for large gate drive.
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etads
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Exponent of the vds dependence of gam1.
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alp
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Factor of the channel-length modulation.
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vp (V)
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Characteristic voltage of the channel-length modulation.
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gamoo
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Coefficient for the drain induced threshold shift at zero gate drive.
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etagam
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Exponent of the back-bias dependence of gamo.
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mo
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Factor for the subthreshold slope.
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etam
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Exponent of the back-bias dependence of m.
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phit (V)
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Thermal voltage.
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zet1
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Weak-inversion correction factor.
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vsbt (V)
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Limiting voltage of the vsb dependence of m and gamo.
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a1
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Factor of the weak-avalanche current.
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a2 (V)
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Exponent of the weak-avalanche current.
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a3
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Factor of the drain-source voltage above which weak-avalanche occurs.
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cox (F)
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Gate-to-channel capacitance (* mult).
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cgdo (F)
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Gate-drain overlap capacitance (* mult).
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cgso (F)
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Gate-source overlap capacitance (* mult).
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nt (J)
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Coefficient of the thermal noise.
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nf (V2)
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Coefficient of the flicker noise (/ mult).
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lv2 (m)
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lv1 (m)
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lv51 (m)
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lv50 (V)
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Operating-Point Parameters
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ide (A)
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Resistive drain current.
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ige (A)
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Resistive gate current.
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ise (A)
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Resistive source current.
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ibe (A)
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Resistive bulk current.
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vds (V)
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Drain-source voltage.
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vgs (V)
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Gate-source voltage.
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vsb (V)
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Source-bulk voltage.
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ids (A)
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Resistive drain-source current.
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idb (A)
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Resistive drain-bulk current.
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isb (A)
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Resistive source-bulk current.
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iavl (A)
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Substrate current.
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pwr (W)
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Power.
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vt1 (V)
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Vto including backbias effects.
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vgt2 (V)
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Effective gate drive including backbias and drain effects.
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vdss1 (V)
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Saturation voltage at actual bias.
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vsat (V)
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Saturation limit.
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gm (S)
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Transconductance (d ids / d vgs).
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gmb (S)
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Bulk transconductance (d ids / d vbs).
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gds (S)
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Output conductance (d ids / d vds).
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cdd (F)
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Capacitance (d qd / d vd).
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cdg (F)
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Capacitance (- d qd / d vg).
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cds (F)
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Capacitance (- d qd / d vs).
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cdb (F)
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Capacitance (- d qd / d vb).
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cgd (F)
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Capacitance (- d qg / d vd).
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cgg (F)
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Capacitance (d qg / d vg).
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cgs (F)
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Capacitance (- d qg / d vs).
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cgb (F)
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Capacitance (- d qg / d vb).
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csd (F)
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Capacitance (- d qs / d vd).
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csg (F)
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Capacitance (- d qs / d vg).
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css (F)
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Capacitance (d qs / d vs).
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csb (F)
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Capacitance (- d qs / d vb).
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cbd (F)
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Capacitance (- d qb / d vd).
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cbg (F)
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Capacitance (- d qb / d vg).
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cbs (F)
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Capacitance (- d qb / d vs).
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cbb (F)
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Capacitance (d qb / d vb).
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u
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Transistor gain (gm/gds).
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rout (Ω)
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Small signal output resistance (1/gds).
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vearly (V)
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Equivalent Early voltage (|id|/gds).
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keff (√V )
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Describes body effect at actual bias.
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beff (S/V)
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Effective beta at actual bias in the simple MOS model (2*|ids|/vgt2^2).
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fug (Hz)
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Unity gain frequency at actual bias (gm/(2*pi*cin)).
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sqrtsfw (V/√Hz )
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Input-referred RMS white noise voltage (sqrt(sth)/gm).
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sqrtsff (V/√Hz )
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Input-referred RMS 1/f noise voltage at 1kHz (sqrt(nf/1000)).
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fknee (Hz)
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Cross-over frequency above which white noise is dominant.
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lv9 (V)
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lv10 (V)
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lv26 (V)
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lx4 (A)
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lx50 (A)
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lx12 (Coul)
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lx14 (Coul)
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lx16 (Coul)
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linearity_factor
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I1 (A)
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Related Topics
Philips Models
Compact MOS-Transistor Model (mos705)
Compact MOS-Transistor Model (mos903)
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