Compact MOS-Transistor Model (mos903)

The mos903 model is a compact MOS-transistor model, intended for the simulation of circuit behavior with emphasis on analog applications. It is described in the Philips MOST Modelbook (Jun.98) as MOS model, level 903. Information on how to obtain this document can be found on Source Link by searching for Philips.

In extension to the model book description, a minimum conductance gmin is inserted between the drain and source node to aid convergence. The value of gmin is set by an options statement, default = 1e-12 S.

This is SimKit 5.0.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so.

Sample Instance Statement

m_1 (1 2 0 0) mos9nch w=0.35e-6 l=0.35e-6

Sample Model Statement

model mos9nch mos903 ler=3.5e-7 wer=1e-5 lvar=0 lap=2.2e-8 wvar=0 wot=3e-8 vtor=0.76 the1r=0.67 stthe1r=-1.76e-3 etaalp=0 slalp=0 alpr=0.01

Instance Syntax

Name  d  g  s  [b] ModelName parameter=value ...

Instance Parameters

`mult=1`	Number of devices in parallel.
`l=1.5e-06 m`	Drawn channel length in the lay-out. Scale set by option scale.
`w=2e-05 m`	Drawn channel width in the lay-out. Scale set by option scale.
`printscaled=0`	Print scaled parameter info if value not equal to zero.
`trise=0 K`	Difference between the local ambient and global ambient temperature.
`region=triode`	Estimated DC operating region, used as a convergence aid. Possible values are `off`, `triode`, `sat`, and `subth`.
`m=1`	alias of mult.

Model Syntax

model modelName mos903 parameter=value ...

Model Parameters

`level=903`	MOS Level.
`paramchk=0`	Level of clip warning info.
`vbox=0 V`	Oxide breakdown voltage.
`vbds=0 V`	Drain-source breakdown voltage
`vbdblow=0 V`	Low limit of drain-bulk voltage.
`vbdbhigh=0 V`	High limit of drain-bulk voltage
`vbsblow=0 V`	Low limit of source-bulk voltage.
`vbsbhigh=0 V`	High limit of source-bulk voltage.
`vballmsg=1`	All ovcheck messages if set to 1.
`tmin=0 s`	Ovcheck tmin value.
`tdelay=0 s`	Ovcheck tdelay value.
`stop=0`	Stop simulation on overvoltage when STOP==1.
`ler=1.1e-06(n)/1.25e-06(p) m`
	Effective channel length of the reference transistor.
`wer=2e-05 m`	Effective channel width of the reference transistor.
`lvar=-2.2e-07(n)/-4.6e-07(p) m`
	Difference between the actual and the programmed poly-silicon gate length.
`lap=1e-07(n)/2.5e-08(p) m`
	Effective channel length reduction per side.
`wvar=-2.5e-08(n)/-1.3e-07(p) m`
	Difference between the actual and the programmed field-oxide opening.
`wot=0 m`	Effective channel width reduction per side.
`tr=21 unitCELSIUS`	Reference temperature. Default set by option `tnom`.
`vtor=0.73(n)/1.1(p) V`
	Threshold voltage at zero back-bias.
`stvto=-0.0012(n)/-0.0017(p) V/K`
	Coefficient of the temperature dependence of `vto`.
`slvto=-1.35e-07(n)/3.5e-08(p) V m`
	Coefficient of the length dependence of `vto`.
`sl2vto=0 V m`²	Second coefficient of the length dependence of `vto`.
`sl3vto=0 V`	Third coefficient of the length dependence of `vto`.
`swvto=1.3e-07(n)/5e-08(p) V m`
	Coefficient of the width dependence of `vto`.
`kor=0.65(n)/0.47(p)` `V`
	Low-backbias body factor.
`slko=-1.3e-07(n)/-2e-07(p)` `V m`
	Coefficient of the length dependence of `ko`.
`sl2ko=0 V1/2m2`	Second coefficient of the length dependence of `ko`.
`swko=2e-09(n)/1.15e-07(p)` `V m`
	Coefficient of the width dependence of `ko`.
`kr=0.11(n)/0.47(p)` `V`
	High-backbias body factor.
`slk=-2.8e-07(n)/-2e-07(p)` `V m`
	Coefficient of the length dependence of `k`.
`sl2k=0 V1/2m2`	Second coefficient of the length dependence of `k`.
`swk=2.75e-07(n)/1.15e-07(p)` `V m`
	Coefficient of the width dependence of `k`.
`phibr=0.65 V`	Surface potential at strong inversion.
`vsbxr=0.66(n)/1e-12(p) V`
	Transition voltage for the dual-`k`-factor model.
`slvsbx=0 V m`	Coefficient of the length dependence of `vsbx`.
`swvsbx=-6.75e-07(n)/0(p) V m`
	Coefficient of the width dependence of `vsbx`.
`betsq=8.3e-05(n)/2.61e-05(p) A/V`²
	Gain factor for an infinite square transistor.
`etabet=1.6`	Exponent of the temperature dependence of the gain factor.
`lp1=1e-06 m`	Characteristic length of first profile.
`fbet1=0`	Relative mobility decrease due to first profile.
`lp2=1e-08 m`	Characteristic length of second profile.
`fbet2=0`	Relative mobility decrease due to second profile.
`the1r=0.19 1/V`	Coefficient of the mobility reduction due to the gate-induced field.
`stthe1r=0 1/(V K)`	Coefficient of the temperature dependence of `the1`.
`slthe1r=1.4e-07(n)/7e-08(p) m/V`
	Coefficient of the length dependence of `the1`.
`stlthe1=0 m/(V K)`	Coefficient of the temperature dependence of `slthe1`.
`gthe1=0`	Parameter that selects either the old (gthe1=0) or the new (gthe1=1) scaling rule of the1.
`swthe1=-5.8e-08(n)/-8e-08(p) m/V`
	Coefficient of the width dependence of `the1`.
`wdog=0 m`	Characteristic drawn gate width, below which dogboning appears.
`fthe1=0`	Coefficient describing the width dependence of `the1` for `w` < `wdog`.
`the2r=0.012(n)/0.165(p) 1/``V`
	Coefficient of the mobility reduction due to the back-bias.
`stthe2r=0 1/(``V K)`
	Coefficient of the temperature dependence of `the2`.
`slthe2r=-3.3e-08(n)/-7.5e-08(p) m/``V`
	Coefficient of the length dependence of `the2`.
`stlthe2=0 m/(``V K)`
	Coefficient of the temperature dependence of `slthe2`.
`swthe2=3e-08(n)/2e-08(p) m/``V`
	Coefficient of the width dependence of `the2`.
`the3r=0.145(n)/0.027(p) 1/V`
	Coefficient of the mobility reduction due to the lateral field.
`stthe3r=-0.00066(n)/0(p) 1/(V K)`
	Coefficient of the temperature dependence of `the3`.
`slthe3r=1.85e-07(n)/2.7e-08(p) m/V`
	Coefficient of the length dependence of `the3`.
`stlthe3=-6.2e-10(n)/0(p) m/(V K)`
	Coefficient of the temperature dependence of `slthe3`.
`swthe3=2e-08(n)/1.1e-08(p) m/V`
	Coefficient of the width dependence of `the3`.
`gam1r=0.145(n)/0.077(p) V^(1-etads)`
	Coefficient for the drain induced threshold shift for large gate drive.
`slgam1=1.6e-07(n)/1.05e-07(p) V^(1-etads) m`
	Coefficient of the length dependence of `gam1`.
`swgam1=-1e-08(n)/-1.1e-08(p) V^(1-etads) m`
	Coefficient of the width dependence of `gam1`.
`etadsr=0.6`	Exponent of the vds dependence of `gam1`.
`alpr=0.003(n)/0.044(p)`
	Factor of the channel-length modulation.
`etaalp=0.15(n)/0.17(p)`
	Exponent of the length dependence of `alp`.
`slalp=-0.00565(n)/0.009(p) m^etaalp`
	Coefficient of the length dependence of `alp`.
`swalp=1.67e-09(n)/1.8e-10(p) m`
	Coefficient of the width dependence of `alp`.
`vpr=0.34(n)/0.235(p) V`
	Characteristic voltage of the channel-length modulation.
`gamoor=0.018(n)/0.007(p)`
	Coefficient for the drain induced threshold shift at zero gate drive.
`slgamoo=2e-14(n)/1.1e-14(p) m`²
	Coefficient of the length dependence of `gamoo`.
`sl2gamoo=0`	Second coefficient of the length dependence of `gamoo`.
`etagamr=2(n)/1(p)`
	Exponent of the back-bias dependence of `gamo`.
`mor=0.5(n)/0.375(p)`
	Factor for the subthreshold slope.
`stmo=0 1/K`	Coefficient of the temperature dependence of `mo`.
`slmo=0.00028(n)/4.7e-05(p)` `m`
	Coefficient of the length dependence of `mo`.
`etamr=2(n)/1(p)`	Exponent of the back-bias dependence of m.
`zet1r=0.42(n)/1.3(p)`
	Weak-inversion correction factor.
`etazet=0.17(n)/0.03(p)`
	Exponent of the length dependence of `zet1`.
`slzet1=-0.39(n)/-2.8(p) m^etazet`
	Coefficient of the length dependence of `zet1`.
`vsbtr=2.1(n)/100(p) V`
	Limiting voltage of the vsb dependence of m and `gamo`.
`slvsbt=-4.4e-06(n)/0(p) V m`
	Coefficient of the length dependence of `vsbt`.
`a1r=6(n)/10(p)`	Factor of the weak-avalanche current.
`sta1=0 1/K`	Coefficient of the temperature dependence of `a1`.
`sla1=1.3e-06(n)/-1.5e-05(p) m`
	Coefficient of the length dependence of `a1`.
`swa1=3e-06(n)/3e-05(p) m`
	Coefficient of the width dependence of `a1`.
`a2r=38(n)/59(p) V`	Exponent of the weak-avalanche current.
`sla2=1e-06(n)/-8e-06(p) V m`
	Coefficient of the length dependence of `a2`.
`swa2=2e-06(n)/1.5e-05(p) V m`
	Coefficient of the width dependence of `a2`.
`a3r=0.65(n)/0.52(p)`
	Factor of the drain-source voltage above which weak-avalanche occurs.
`sla3=-5.5e-07(n)/-4.5e-07(p) m`
	Coefficient of the length dependence of `a3`.
`swa3=0(n)/-1.4e-07(p) m`
	Coefficient of the width dependence of `a3`.
`tox=2.5e-08 m`	Thickness of the oxide layer.
`col=3.2e-10 F/m`	Gate overlap capacitance per unit channel width.
`ntr=2.44e-20(n)/2.11e-20(p) J`
	Coefficient of the thermal noise.
`nfmod=0`	Switch that selects either old or new flicker noise model.
`nfr=7e-11(n)/2.14e-11(p) V`²
	Flicker noise coefficient of the reference transistor (for nfmod=0).
`nfar=7.15e+22(n)/1.53e+22(p) 1/(V m`⁴`)`
	First coefficient of the flicker noise coefficient of the reference transistor (for nfmod=1).
`nfbr=2.16e+07(n)/4.06e+06(p) 1/(V m`²`)`
	Second coefficient of the flicker noise coefficient of the reference transistor (for nfmod=1).
`nfcr=0(n)/2.92e-10(p) 1/V`
	Third coefficient of the flicker noise coefficient of the reference transistor (for nfmod=1).
`th3mod=1`	Flag for theta3 clipping.
`dta=0 K`	Temperature offset of the device.
`type=n`	Transistor gender. Possible values are `n` and `p`.
`tnom (unitCELSIUS)`	alias of tnom.
`tref (unitCELSIUS)`	alias of tnom.
`compatible=spectre`
	Encourage device equations to be compatible with a foreign simulator. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `spiceplus`, `eldo`, `sspice`, `mica`, and `pspice`.

Output Parameters

`tempeff (C)`	Effective temperature for a single device.
`meff`	Effective multiplicity factor (m-factor).

Operating-Point Parameters

`ids (A)`	Resistive drain-source current.
`iavl (A)`	Substrate current.
`vds (V)`	Drain-source voltage.
`vgs (V)`	Gate-source voltage.
`vsb (V)`	Source-bulk voltage.
`vto (V)`	Threshold voltage at zero back-bias.
`vts (V)`	VT0 including backbias effects.
`vgt (V)`	Effective gate drive including backbias and drain effects.
`vdss (V)`	Saturation voltage at actual bias.
`vsat (V)`	Saturation limit.
`gm (S)`	Transconductance (d ids / d vgs).
`gmb (S)`	Bulk transconductance (d ids / d vbs).
`gds (S)`	Output conductance (d ids / d vds).
`cdd (F)`	Capacitance (d qd / d vd).
`cdg (F)`	Capacitance (- d qd / d vg).
`cds (F)`	Capacitance (- d qd / d vs).
`cdb (F)`	Capacitance (- d qd / d vb).
`cgd (F)`	Capacitance (- d qg / d vd).
`cgg (F)`	Capacitance (d qg / d vg).
`cgs (F)`	Capacitance (- d qg / d vs).
`cgb (F)`	Capacitance (- d qg / d vb).
`csd (F)`	Capacitance (- d qs / d vd).
`csg (F)`	Capacitance (- d qs / d vg).
`css (F)`	Capacitance (d qs / d vs).
`csb (F)`	Capacitance (- d qs / d vb).
`cbd (F)`	Capacitance (- d qb / d vd).
`cbg (F)`	Capacitance (- d qb / d vg).
`cbs (F)`	Capacitance (- d qb / d vs).
`cbb (F)`	Capacitance (d qb / d vb).
`cgdol (F)`	Drain overlap capacitance of the actual transistor.
`cgsol (F)`	Gate overlap capacitance of the actual transistor.
`weff (m)`	Effective channel width for geometrical models.
`leff (m)`	Effective channel length for geometrical models.
`u`	Transistor gain (gm/gds).
`rout (`Ω`)`	Small signal output resistance (1/gds).
`vearly (V)`	Equivalent Early voltage (\|id\|/gds).
`keff (``V )`	Describes body effect at actual bias.
`beff (S/V)`	Effective beta at actual bias in the simple MOS model (2*\|ids\|/vgt2^2).
`fug (Hz)`	Unity gain frequency at actual bias (gm/(2picin)).
`sqrtsfw (V/``Hz )`
	Input-referred RMS white noise voltage (sqrt(sth)/gm).
`sqrtsff (V/``Hz )`
	Input-referred RMS 1/f noise voltage at 1kHz (sqrt(nf/1000)).
`fknee (Hz)`	Cross-over frequency above which white noise is dominant.
`ctype`	Channel type (-1 for PMOS, +1 for NMOS).
`von (V)`	Signed vts (<0 for PMOS, >0 for NMOS).
`table_ids (A)`	Channel current.
`table_isub (A)`	Substrate current.
`table_vth (V)`	Threshold voltage including back-bias and drain-bias effects.
`table_vdsat (V)`	Saturation voltage at actual bias.
`table_qg (Coul)`	Charge at g node.
`table_qd (Coul)`	Charge at d node.
`table_qb (Coul)`	Charge at b node.
`mos_region=SUBTHRESHOLD`
	MOS region. Possible values are `off`, `sat`, `triode`, and `subth`.
`diode_region=ON`	DIODE region. Possible values are `off` and `on.`

Spectre Circuit Simulator Components and Device Models Reference
Product Version 23.1, June 2023