Long Channel JFET/MOSFET Model (mos30)
This long channel JFET/MOSFET model is specially developed to describe the drift region of LDMOS, EPMOS and VDMOS devices. It is described in the Philips MOST Modelbook (Dec.95) as MOS model, level 30 (Used for DMOS). Information on how to obtain this document can be found on Source Link by searching for Philips.
Note: In noise analysis, mos30 instances will not generate any contribution, since there are no noise sources included in the mos30 model.
Warning: Dont use this model. It is obsolete.
Mos30 will be removed from spectre in the next release.
(c) Philips Electronics N.V. 1993, 1994, 1996
This device is supported within altergroups.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so.
Sample Instance Statement
mn30 (1 2 0 0) nchmod area=2 mult=1
Sample Model Statement
model nchmod mos30 type=n tox=1.1e-5 ron=150 rsat=500 psat=2 vsat=1 vsub=0.59 cgate=1.65e-12 csub=1.1e-9 tref=25
Instance Syntax
Name d g s [b] ModelName parameter=value ...
Instance Parameters
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mult=1
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Number of devices in parallel.
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area=1
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Alias of mult.
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region=triode
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Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, or subth.
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m=1
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Multiplicity factor.
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Model Syntax
model modelName mos30 parameter=value ...
Model Parameters
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type=n
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Transistor gender. Possible values are n or p.
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ron=1.0 Ω
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Ohmic resistance at zero bias.
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rsat=1.0 Ω
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Space charge resistance at zero bias.
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vsat=10.0 V
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Critical drain-source voltage for hot carriers.
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psat=1.0
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Velocity saturation coefficient.
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vp=-1.0 V
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Pinch off voltage at zero gate and substrate voltages.
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tox=-1.0 cm
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Gate oxide thickness.
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dch=1.0e15 cm-3
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Doping level channel.
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dsub=1.0e15 cm-3
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Doping level substrate.
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vsub=0.6 V
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Substrate diffusion voltage.
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vgap=1.2 V
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Bandgap voltage channel.
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cgate=0.0 F
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Gate capacitance at zero bias.
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csub=0.0 F
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Substrate capacitance at zero bias.
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tausc=0.0 s
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Space charge transit time of the channel.
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ach=0.0
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Temperature coefficient resistivity of the channel.
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kf=0.0
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Flickernoise coefficient.
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af=1.0
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Flickernoise exponent.
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tr (C)
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Reference temperature. Default set by option tnom.
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tref (C)
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Alias of tr. Default set by option tnom.
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tnom (C)
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Alias of tr. Default set by option tnom.
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dta=0.0 K
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Temperature offset of the device.
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trise=0.0 K
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Alias of dta.
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Output Parameters
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ront (Ω)
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Ohmic resistance at zero bias.
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rsat (Ω)
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Space charge resistance at zero bias.
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vsatt (V)
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Critical drain-source voltage for hot carriers.
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vsubt (V)
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Substrate diffusion voltage.
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cgate (F)
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Gate capacitance at zero bias.
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csubt (F)
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Substrate capacitance at zero bias.
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Operating-Point Parameters
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pwr (W)
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Power.
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ids (A)
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Total current including velocity saturation.
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qb (Coul)
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Substrate charge.
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qg (Coul)
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Gate charge.
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qds (Coul)
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Space charge in the channel.
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gdsd (S)
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Conductance (d ids / d vd).
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gdsg (S)
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Conductance (d ids / d vg).
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gdss (S)
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Conductance (d ids / d vs).
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gdsb (S)
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Conductance (d ids / d vb).
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cbd (F)
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Capacitance (d qb / d vd).
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cbg (F)
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Capacitance (d qb / d vg).
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cbs (F)
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Capacitance (d qb / d vs).
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cbb (F)
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Capacitance (d qb / d vb).
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cgd (F)
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Capacitance (d qg / d vd).
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cgg (F)
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Capacitance (d qg / d vg).
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cgs (F)
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Capacitance (d qg / d vs).
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cgb (F)
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Capacitance (d qg / d vb).
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cdsd (F)
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Capacitance (d qds / d vd).
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cdsg (F)
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Capacitance (d qds / d vg).
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cdss (F)
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Capacitance (d qds / d vs).
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cdsb (F)
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Capacitance (d qds / d vb).
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Related Topics
Philips Models
JFETIDG Model (jfetidg)
Long Channel JFET/MOSFET Model (mos3002)
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