mult=1

Number of devices in parallel.

l=2e-06 m

Drawn channel length in the layout. Scale set by option scale.

w=1e-05 m

Drawn channel width in the layout. Scale set by option scale.

nf=1

Number of fingers.

ngcon=1

Number of gate contacts.

xgw=1e-07 m

Distance from the gate contact to the channel edge.

printscaled=0

Print scaled parameter info if value not equal to zero.

trise=0 K

Difference between the local ambient and global ambient temperature.

region=triode

Estimated DC operating region, used as a convergence aid. Possible values are off, triode, sat, and subth.

0  m=1

Alias of mult.

mos_region=SUBTHRESHOLD

diode_region=ON

level=1.1e+04

Transistor Level.

paramchk=0

Level of clip warning info.

vbox=0 V

Oxide breakdown voltage.

vbds=0 V

Drain-source breakdown voltage.

tmin=0 s

Ovcheck tmin value.

lvar=0 m

Difference between the actual and the programmed poly-silicon gate length.

lap=4e-08 m

Effective channel length reduction per side.

wvar=0 m

Difference between the actual and the programmed field-oxide opening.

wot=0 m

Effective channel width reduction per side.

tr=21 C

Reference temperature.

lmin=0 m

Device length low limit for binning selection.

lmax=1 m

Device length high limit for binning selection.

wmin=0 m

Device width low limit for binning selection.

wmax=1 m

Device width high limit for binning selection.

vfb=-1.05 V

Flat-band voltage at reference temperature.

poko=0.5 V

Coefficient for the geometry-independent part of KO.

plko=0 V

Coefficient for the length dependence of KO.

pwko=0 V

Coefficient for the width dependence of KO.

plwko=0 V

Coefficient for the length times width dependence of KO.

kpinv=0 1/V

Inverse of body-effect factor of the poly-silicon gate.

pophib=0.95 V

Coefficient for the geometric independent part of PHIB.

plphib=0 V

Coefficient for the length dependence of PHIB.

pwphib=0 V

Coefficient for the width dependence of PHIB.

plwphib=0 V

Coefficient for the length times width dependence of PHIB.

pobet=0.00192(n)/0.000381(p) A/V²

Coefficient for the geometry-independent part of BET.

plbet=0 A/V²

Coefficient for the length dependence of BET.

pwbet=0 A/V²

Coefficient for the width dependence of BET.

plwbet=0 A/V²

Coefficient for the width over length dependence of BET.

pothesr=0.356(n)/0.73(p) 1/V

Coefficient of the geometry-independent part of THESR.

plthesr=0 1/V

Coefficient of the length dependence of THESR.

pwthesr=0 1/V

Coefficient of the width dependence of THESR.

plwthesr=0 1/V

Coefficient of the length times width dependence of THESR.

potheph=0.0129(n)/0.001(p) 1/V

Coefficient of the geometry-independent part of THEPH.

pltheph=0 1/V

Coefficient of the length dependence of THEPH.

pwtheph=0 1/V

Coefficient of the width dependence of THEPH.

plwtheph=0 1/V

Coefficient of the length times width dependence of THEPH.

poetamob=1.4(n)/3(p)

Coefficient of the geometry-independent part of ETAMOB.

pletamob=0

Coefficient of the length dependence of ETAMOB.

pwetamob=0

Coefficient of the width dependence of ETAMOB.

plwetamob=0

Coefficient of the length times width dependence of ETAMOB.

pother=0.0812(n)/0.079(p) 1/V

Coefficient of the geometry-independent part of THER.

plther=0 1/V

Coefficient of the length dependence of THER.

pwther=0 1/V

Coefficient of the width dependence of THER.

plwther=0 1/V

Coefficient of the length times width dependence of THER.

ther1=0 V

Numerator of gate voltage dependent part of series resistance.

ther2=1 V

Denominator of gate voltage dependent part of series resistance.

pothesat=0.251(n)/0.173(p) 1/V

Coefficient of the geometry-independent part of THESAT.

plthesat=0 1/V

Coefficient of the length dependence of THESAT.

pwthesat=0 1/V

Coefficient of the width dependence of THESAT.

plwthesat=0 1/V

Coefficient of the length times width dependence of THESAT.

potheth=1e-05(n)/0(p) 1/V³

Coefficient of the geometry-independent part of THETH.

pltheth=0 1/V³

Coefficient of the length dependence of THETH.

pwtheth=0 1/V³

Coefficient of the width dependence of THETH.

plwtheth=0 1/V³

Coefficient of the length times width dependence of THETH.

posdibl=0.000853(n)/3.55e-05(p) 1/V

Coefficient of the geometry-independent part of SDIBL.

plsdibl=0 1/V

Coefficient of the length dependence of SDIBL.

pwsdibl=0 1/V

Coefficient of the width dependence of SDIBL.

plwsdibl=0 1/V

Coefficient of the length times width dependence of SDIBL.

pomo=0

Coefficient of the geometry-independent part of MO.

plmo=0

Coefficient of the length dependence of MO.

pwmo=0

Coefficient of the width dependence of MO.

plwmo=0

Coefficient of the length times width dependence of MO.

possf=0.012(n)/0.01(p) 1/V

Coefficient of the geometry-independent part of SSF.

plssf=0 1/V

Coefficient of the length dependence of SSF.

pwssf=0 1/V

Coefficient of the width dependence of SSF.

plwssf=0 1/V

Coefficient of the length times width dependence of SSF.

poalp=0.025

Coefficient of the geometry-independent part of ALP.

plalp=0

Coefficient of the length dependence of ALP.

pwalp=0

Coefficient of the width dependence of ALP.

plwalp=0

Coefficient of the length times width dependence of ALP.

vp=0.05 V

Characteristic voltage of channel-length modulation.

pomexp=0.2

Coefficient of the geometry-independent part of MEXP.

plmexp=0

Coefficient of the length dependence of MEXP.

pwmexp=0

Coefficient of the width dependence of MEXP.

plwmexp=0

Coefficient of the length times width dependence of MEXP.

poa1=6.02(n)/6.86(p)

Coefficient of the geometry-independent part of A1.

pla1=0

Coefficient of the length dependence of A1.

pwa1=0

Coefficient of the width dependence of A1.

plwa1=0

Coefficient of the length times width dependence of A1.

poa2=38(n)/57.3(p) V

Coefficient of the geometry-independent part of A2.

pla2=0 V

Coefficient of the length dependence of A2.

pwa2=0 V

Coefficient of the width dependence of A2.

plwa2=0 V

Coefficient of the length times width dependence of A2.

poa3=0.641(n)/0.425(p)

Coefficient of the geometry-independent part of A3.

pla3=0

Coefficient of the length dependence of A3.

pwa3=0

Coefficient of the width dependence of A3.

plwa3=0

Coefficient of the length times width dependence of A3.

poiginv=0 A/V²

Coefficient of the geometry-independent part of IGINV.

pliginv=0 A/V²

Coefficient of the length dependence of IGINV.

pwiginv=0 A/V²

Coefficient of the width dependence of IGINV.

plwiginv=0 A/V²

Coefficient of the length times width dependence of IGINV.

pobinv=48(n)/87.5(p) V

Coefficient of the geometry-independent part of BINV.

plbinv=0 V

Coefficient of the length dependence of BINV.

pwbinv=0 V

Coefficient of the width dependence of BINV.

plwbinv=0 V

Coefficient of the length times width dependence of BINV.

poigacc=0 A/V²

Coefficient of the geometry-independent part of IGACC.

pligacc=0 A/V²

Coefficient of the length dependence of IGACC.

pwigacc=0 A/V²

Coefficient of the width dependence of IGACC.

plwigacc=0 A/V²

Coefficient of the length times width dependence of IGACC.

pobacc=48 V

Coefficient of the geometry-independent part of BACC.

plbacc=0 V

Coefficient of the length dependence of BACC.

pwbacc=0 V

Coefficient of the width dependence of BACC.

plwbacc=0 V

Coefficient of the length times width dependence of BACC.

vfbov=0 V

Flat-band voltage for the Source/Drain overlap extensions.

kov=2.5 V

Body-effect factor for the Source/Drain overlap extensions.

poigov=0 A/V²

Coefficient of the geometry-independent part of IGOV.

pligov=0 A/V²

Coefficient of the length dependence of IGOV.

pwigov=0 A/V²

Coefficient of the width dependence of IGOV.

plwigov=0 A/V²

Coefficient of the length times width dependence of IGOV.

poagidl=0 A/V³

Coefficient of the geometry-independent part of AGIDL.

plagidl=0 A/V³

Coefficient of the length dependence of AGIDL.

pwagidl=0 A/V³

Coefficient of the width dependence of AGIDL.

plwagidl=0 A/V³

Coefficient of the length times width dependence of AGIDL.

pobgidl=41 V

Coefficient of the geometry-independent part of BGIDL.

plbgidl=0 V

Coefficient of the length dependence of BGIDL.

pwbgidl=0 V

Coefficient of the width dependence of BGIDL.

plwbgidl=0 V

Coefficient of the length times width dependence of BGIDL.

pocgidl=0

Coefficient of the geometry-independent part of CGIDL.

plcgidl=0

Coefficient of the length dependence of CGIDL.

pwcgidl=0

Coefficient of the width dependence of CGIDL.

plwcgidl=0

Coefficient of the length times width dependence of CGIDL.

tox=3.2e-09 m

Thickness of gate oxide layer.

pocox=2.98e-14(n)/2.72e-14(p) F

Coefficient of the geometry-independent part of COX.

plcox=0 F

Coefficient of the length dependence of COX.

pwcox=0 F

Coefficient of the width dependence of COX.

plwcox=0 F

Coefficient of the length times width dependence of COX.

pocgdo=6.39e-15(n)/6.36e-15(p) F

Coefficient of the geometry-independent part of CGDO.

plcgdo=0 F

Coefficient of the length dependence of CGDO.

pwcgdo=0 F

Coefficient of the width dependence of CGDO.

plwcgdo=0 F

Coefficient of the length time width dependence of CGDO.

pocgso=6.39e-15(n)/6.36e-15(p) F

Coefficient of the geometry-independent part of CGSO.

plcgso=0 F

Coefficient of the length dependence of CGSO.

pwcgso=0 F

Coefficient of the width dependence of CGSO.

plwcgso=0 F

Coefficient of the length times width dependence of CGSO.

gatenoise=0

Flag for in/exclusion of induced gate thermal noise.

nt=1.62e-20 J

Thermal noise coefficient.

ponfa=8.32e+22(n)/1.9e+22(p) 1/V m⁴

Coefficient of the geometry-independent part of NFA.

plnfa=0 1/V m⁴

Coefficient of the length dependence of NFA.

pwnfa=0 1/V m⁴

Coefficient of the width dependence of NFA.

plwnfa=0 1/V m⁴

Coefficient of the length times width dependence of NFA.

ponfb=2.51e+07(n)/5.04e+06(p) 1/V m²

Coefficient of the geometry-independent part of NFB.

plnfb=0 1/V m²

Coefficient of the length dependence of NFB.

pwnfb=0 1/V m²

Coefficient of the width dependence of NFB.

plwnfb=0 1/V m²

Coefficient of the length times width dependence of NFB.

ponfc=0(n)/3.63e-10(p) 1/V

Coefficient of the geometry-independent part of NFC.

plnfc=0 1/V

Coefficient of the length dependence of NFC.

pwnfc=0 1/V

Coefficient of the width dependence of NFC.

plwnfc=0 1/V

Coefficient of the length times width dependence of NFC.

potvfb=0.0005 V/K

Coefficient of the geometry-independent part of STVFB.

pltvfb=0 V/K

Coefficient of the length dependence of STVFB.

pwtvfb=0 V/K

Coefficient of the width dependence of STVFB.

plwtvfb=0 V/K

Coefficient of the length times width dependence of STVFB.

potphib=-0.00085 V/K

Coefficient of the geometry-independent part of STPHIB.

pltphib=0 V/K

Coefficient of the length dependence of STPHIB.

pwtphib=0 V/K

Coefficient of the width dependence of STPHIB.

plwtphib=0 V/K

Coefficient of the length times width dependence of STPHIB.

potetabet=1.3(n)/0.5(p)

Coefficient of the geometry-independent part of ETABET.

pltetabet=0

Coefficient of the length dependence of ETABET.

pwtetabet=0

Coefficient of the width dependence of ETABET.

plwtetabet=0

Coefficient of the length times width dependence of ETABET.

potetasr=0.65(n)/0.5(p)

Coefficient of the geometry-independent part of ETASR.

pltetasr=0

Coefficient of the length dependence of ETASR.

pwtetasr=0

Coefficient of the width dependence of ETASR.

plwtetasr=0

Coefficient of the length times width dependence of ETASR.

potetaph=1.35(n)/3.75(p)

Coefficient of the geometry-independent part of ETAPH.

pltetaph=0

Coefficient of the length dependence of ETAPH.

pwtetaph=0

Coefficient of the width dependence of ETAPH.

plwtetaph=0

Coefficient of the length times width dependence of ETAPH.

potetamob=0 1/K

Coefficient of the geometry-independent part of STETAMOB.

pltetamob=0 1/K

Coefficient of the length dependence of STETAMOB.

pwtetamob=0 1/K

Coefficient of the width dependence of STETAMOB.

plwtetamob=0 1/K

Coefficient of the length times width dependence of STETAMOB.

nu=2

Exponent of field dependence of mobility model.

potnuexp=5.25(n)/3.23(p)

Coefficient of the geometry-independent part of NUEXP.

pltnuexp=0

Coefficient of the length dependence of NUEXP.

pwtnuexp=0

Coefficient of the width dependence of NUEXP.

plwtnuexp=0

Coefficient of the length times width dependence of NUEXP.

potetar=0.95(n)/0.4(p)

Coefficient of the geometry-independent part of ETAR.

pltetar=0

Coefficient of the length dependence of ETAR.

pwtetar=0

Coefficient of the width dependence of ETAR.

plwtetar=0

Coefficient of the length times width dependence of ETAR.

potetasat=1.04(n)/0.86(p)

Coefficient of the geometry-independent part of ETASAT.

pltetasat=0

Coefficient of the length dependence of ETASAT.

pwtetasat=0

Coefficient of the width dependence of ETASAT.

plwtetasat=0

Coefficient of the length times width dependence of ETASAT.

pota1=0 1/K

Coefficient of the geometry-independent part of STA1.

plta1=0 1/K

Coefficient of the length dependence of STA1.

pwta1=0 1/K

Coefficient of the width dependence of STA1.

plwta1=0 1/K

Coefficient of the length times width dependence of STA1.

potbgidl=-0.000364 V/K

Coefficient of the geometry-independent part of STBGIDL.

pltbgidl=0 V/K

Coefficient of the length dependence of STBGIDL.

pwtbgidl=0 V/K

Coefficient of the width dependence of STBGIDL.

plwtbgidl=0 V/K

Coefficient of the length times width dependence of STBGIDL.

dta=0 K

Temperature offset of the device.

rgo=0 Ω

Gate resistance.

rint=0 Ω m²

Contact resistance between silicide and poly.

rvpoly=0 Ω m²

Vertical poly resistance.

rshg=0 Ω/Sqr

Gate electrode diffusion sheet resistance.

dlsil=0 m

Silicide extension over the physical gate length.

rth=300 K/W

Thermal resistance.

cth=3e-09 J/K

Thermal capacitance.

ath=0

Temperature coefficient of the thermal resistance.

binning=0

flag for eldo model.

type=n

Transistor gender. Possible values are n and p.

imax=1000 A

Explosion current.

tnom (C)

alias of tnom.

tref (C)

alias of tnom.

compatible=spectre

Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, spiceplus, eldo, sspice, mica, and pspice.

tempeff (C)

Effective temperature for a single device.

meff

Effective multiplicity factor (m-factor).

ids (A)

Drain current, excluding avalanche and tunnel currents.

iavl (A)

Substrate current due to weak-avalanche.

igs (A)

Gate-to-source current due to direct tunneling.

igd (A)

Gate-to-drain current due to direct tunneling.

igb (A)

Gate-to-bulk current due to direct tunneling.

vds (V)

Drain-source voltage.

vgs (V)

Gate-source voltage.

vsb (V)

Source-bulk voltage.

vto (V)

Zero-bias threshold voltage.

vts (V)

Threshold voltage including back-bias effects.

vth (V)

Threshold voltage including back-bias and drain-bias effects.

vgt (V)

Effective gate drive voltage including back-bias and drain voltage effects.

vdss (V)

Drain saturation voltage at actual bias.

vsat (V)

Saturation limit.

gm (A/V)

Transconductance (d ids / d vgs).

gmb (A/V)

Substrate-transconductance (d ids / d vbs).

gds (A/V)

Output conductance (d ids / d vds).

cdd (F)

Capacitance (d qd / d vd).

cdg (F)

Capacitance (- d qd / d vg).

cds (F)

Capacitance (- d qd / d vs).

cdb (F)

Capacitance (- d qd / d vb).

cgd (F)

Capacitance (- d qg / d vd).

cgg (F)

Capacitance (d qg / d vg).

cgs (F)

Capacitance (- d qg / d vs).

cgb (F)

Capacitance (- d qg / d vb).

csd (F)

Capacitance (- d qs / d vd).

csg (F)

Capacitance (- d qs / d vg).

css (F)

Capacitance (d qs / d vs).

csb (F)

Capacitance (- d qs / d vb).

cbd (F)

Capacitance (- d qb / d vd).

cbg (F)

Capacitance (- d qb / d vg).

cbs (F)

Capacitance (- d qb / d vs).

cbb (F)

Capacitance (d qb / d vb).

cgdol (F)

Gate-drain overlap capacitance of the actual transistor.

cgsol (F)

Gate-source overlap capacitance of the actual transistor.

weff (m)

Effective channel width for geometrical models.

leff (m)

Effective channel length for geometrical models.

rg (Ω)

Gate resistance.

u

Transistor gain (gm/gds).

rout (Ω)

Small-signal output resistance (1/gds).

vearly (V)

Equivalent Early voltage (|id|/gds).

keff (V )

Body effect parameter.

beff (A/V²)

Gain factor.

fug (Hz)

Unity gain frequency at actual bias (gm/(2*pi*cin)).

sqrtsfw (V/Hz )

Input-referred RMS white noise voltage density.

sqrtsff (V/Hz )

Input-referred RMS white noise voltage density at 1 kHz.

fknee (Hz)

Cross-over frequency above which white noise is dominant.

Pdiss (W)

Dissipation.

TK (K)

Actual device temperature.

BET (A/V²)

Gain factor.

ctype

Channel type (-1 for PMOS, +1 for NMOS).

von (V)

Signed vth (<0 for PMOS, >0 for NMOS).

table_ids (A)

Current.

table_vth (V)

Threshold voltage including back-bias and drain-bias effects.

table_qg (Coul)

Charge at g node.

table_qd (Coul)

Charge at d node.

table_qb (Coul)

Charge at b node.

pwr (W)

Power.

mos_region=SUBTHRESHOLD

MOS region.
Possible values are off, sat, triode,  and subth

diode_region=ON

DIODE region.
Possible values are off and on.