Component Statements
This device is supported within altergroups.
Sample Instance Statement
m4 (0 2 1 1) pchmod w=2u l=0.8u as=250p ad=250p pd=168p ps=168p m=1
Sample Model Statement
model pchmod bsim3v3 type=p mobmod=1 capmod=2 version=3.1 tox=9e-5 cdsc=1e-3 cdscb=-4.36889e-4 cdscd=0 cit=0 nfactor=1.79 xj=1.5e-7 vsat=1.5737e5 at=1e5 a0=1.2522809 ags=0.2912413 a1=1.01222e-4 a2=0.996841 keta=0 nch=4.06263e17 ngate=7.6e19 k1=0.823562
Instance Syntax
Name d g s b ModelName parameter=value ...
Instance Parameters
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w (m)
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Channel width.
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l (m)
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Channel length.
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as (m2)
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Area of source diffusion.
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ad (m2)
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Area of drain diffusion.
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ps (m)
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Perimeter of source diffusion.
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pd (m)
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Perimeter of drain diffusion.
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nrd (m/m)
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Number of squares of drain diffusion.
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nrs (m/m)
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Number of squares of source diffusion.
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m=1
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Multiplicity factor (number of MOSFETs in parallel).
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region=triode
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Estimated operating region. Spectre generates output number (0-4) in a rawfile. Possible values are off, triode, sat, subth, and breakdown.
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nqsmod
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NQS flag.
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acnqsmod
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AC NQS flag.
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isnoisy=yes
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Should device generate noise. Possible values are yes and no.
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trise (C)
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Temperature rise from ambient.
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aforward=0
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Forward gate leakage current coefficient.
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areverse=0
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Reverse gate leakage current coefficient.
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delvto=0 V
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Shift in zer0-bias threshold voltage vth0.
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mulmu0=1
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Mobility multiplier.
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mulu0=1
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Mobility multiplier.
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delk1=0 V
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Shift in body bias coefficient k1.
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delnfct=0
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Shift in subthreshold swing factor nfactor.
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geo=0
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Geometry selector.
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rdc=0
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Drain contact resistance.
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rsc=0
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Source contact resistance.
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sa=0 m
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Distance between OD edge to poly of one side.
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sb=0 m
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Distance between OD edge to poly of the other side.
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sa1=0 m
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Distance between OD edge to poly of one side 1.
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sa2=0 m
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Distance between OD edge to poly of one side 2.
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sa3=0 m
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Distance between OD edge to poly of one side 3.
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sa4=0 m
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Distance between OD edge to poly of one side 4.
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sa5=0 m
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Distance between OD edge to poly of one side 5.
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sa6=0 m
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Distance between OD edge to poly of one side 6.
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sa7=0 m
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Distance between OD edge to poly of one side 7.
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sa8=0 m
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Distance between OD edge to poly of one side 8.
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sa9=0 m
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Distance between OD edge to poly of one side 9.
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sa10=0 m
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Distance between OD edge to poly of one side 10.
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sb1=0 m
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Distance between OD edge to poly of the other side 1.
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sb2=0 m
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Distance between OD edge to poly of the other side 2.
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sb3=0 m
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Distance between OD edge to poly of the other side 3.
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sb4=0 m
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Distance between OD edge to poly of the other side 4.
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sb5=0 m
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Distance between OD edge to poly of the other side 5.
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sb6=0 m
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Distance between OD edge to poly of the other side 6.
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sb7=0 m
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Distance between OD edge to poly of the other side 7.
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sb8=0 m
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Distance between OD edge to poly of the other side 8.
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sb9=0 m
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Distance between OD edge to poly of the other side 9.
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sb10=0 m
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Distance between OD edge to poly of the other side 10.
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sw1=0 m
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Width of SA1/SB1.
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sw2=0 m
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Width of SA2/SB2.
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sw3=0 m
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Width of SA3/SB3.
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sw4=0 m
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Width of SA4/SB4.
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sw5=0 m
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Width of SA5/SB5.
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sw6=0 m
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Width of SA6/SB6.
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sw7=0 m
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Width of SA7/SB7.
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sw8=0 m
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Width of SA8/SB8.
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sw9=0 m
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Width of SA9/SB9.
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sw10=0 m
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Width of SA10/SB10.
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stimod
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LOD stress effect model selector.
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sca=0.0
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Integral of the first distribution function for scattered well dopant.
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scb=0.0
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Integral of the second distribution function for scattered well dopant.
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scc=0.0 V
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Integral of the third distribution function for scattered well dopant.
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sc=0.0 m
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Distance to a single well edge .
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mulid0=1.0
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Ids multiplier.
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Model Syntax
model modelName bsim3v3 parameter=value ...
Model Parameters
Device type parameters
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type=n
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Transistor type. Possible values are n and p.
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Threshold voltage parameters
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vtho (V)
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Threshold voltage at zero body bias for long-channel devices. For enhancement-mode devices, vtho > 0 for n-channel and vth < 0 for p-channel. Default value is calculated from other model parameters.
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vfb=-1 V
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Flat-band voltage.
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k1=0.5 V
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Body-effect coefficient.
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k2=-0.0186
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Charge-sharing parameter.
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k3=80
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Narrow width coefficient.
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k3b=0 1/V
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Narrow width coefficient.
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w0=2.5e-6 m
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Narrow width coefficient.
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nlx=1.74e-7 m
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Lateral nonuniform doping coefficient.
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gamma1 (V )
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Body-effect coefficient near the surface.
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gamma2 (V )
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Body-effect coefficient in the bulk.
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vbx (V)
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Threshold voltage transition body voltage.
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vbm=-3 V
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Maximum applied body voltage.
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dvt0=2.2
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First coefficient of short-channel effects.
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dvt1=0.53
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Second coefficient of short-channel effects.
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dvt2=-0.032 1/V
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Body-bias coefficient of short-channel effects.
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dvt0w=0 1/m
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First coefficient of narrow-width effects.
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dvt1w=5.3e6 1/m
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Second coefficient of narrow-width effects.
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dvt2w=-0.032 1/V
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Body-bias coefficient of narrow-width effects.
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a0=1
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Nonuniform depletion width effect coefficient.
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b0=0 m
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Bulk charge coefficient due to narrow width effect.
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b1=0 m
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Bulk charge coefficient due to narrow width effect.
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a1=0 1/V
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No-saturation coefficient.
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a2=1
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No-saturation coefficient.
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ags=0 1/v
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Gate-bias dependence of Abulk.
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keta=-0.047 1/V
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Body-bias coefficient for non-uniform depletion width effect.
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vfbflag=0
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49 Vfb selector.
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vthmod
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Vth output selector. 'std' outputs model equation Vth. 'vthcc' outputs constant current Vth, and may impact simulation performance. The default value is taken from the options parameter 'vthmod'. Possible values are std and vthcc.
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ivth (A)
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Vth current parameter. The default value is taken from the options parameter 'ivthn' or 'ivthp', depending on the type of the model.
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ivthw (m)
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Width offset for constant current Vth. The default value is taken from the options parameter 'ivthw'.
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ivthl (m)
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Length offset for constant current Vth. The default value is taken from the options parameter 'ivthl'.
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ivth_vdsmin (V)
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Minimum Vds in constant current Vth calculating. The default value is taken from the options parameter 'ivth_vdsmin'.
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Process parameters
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nsub=6e16 cm-3
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Substrate doping concentration.
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nch=1.7e17 cm-3
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Peak channel doping concentration.
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ngate=0 cm-3
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Poly-gate doping concentration.
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xj=0.15e-6 m
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Source/drain junction depth.
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lint=0 m
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Lateral diffusion for one side.
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wint=0 m
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Width reduction for one side.
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ll=0 m^lln
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Length dependence of delta L.
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lln=1
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Length exponent of delta L.
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lw=0 m^lwn
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Width dependence of delta L.
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lwn=1
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Width exponent of delta L.
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lwl=0 m^lwn+lln
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Area dependence of delta L.
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wl=0 m^wln
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Length dependence of delta W.
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wln=1
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Length exponent of delta W.
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ww=0 m^wwn
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Width dependence of delta W.
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wwn=1
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Width exponent of delta W.
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wwl=0 m^wwn+wln
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Area dependence of delta W.
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dwg=0 m/v
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Gate-bias dependence of channel width.
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dwb=0 m/v
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Body-bias dependence of channel width.
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tox=1.5e-8 m
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Gate oxide thickness.
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dtoxcv=0.0 m
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Delta oxide thickness.
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toxm=tox m
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Tox at which parameters were extracted.
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toxe=tox m
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Electrical gate equivalent oxide thickness.
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xt=1.55e-7 m
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Doping depth.
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rdsw=0 ohm μm^wr
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Width dependence of drain-source resistance.
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prwb=0 1/v
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Body-effect coefficient for Rds.
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prwg=0 1/V
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Gate-effect coefficient for Rds.
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wr=1
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Width offset for parasitic resistance.
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binunit=1
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Bin parameter unit selector. 1 for microns and 2 for meters.
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binflag=0
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49 binning factor.
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lref=1.0e20
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49 binning length factor.
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wref=1.0e20
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49 binning width factor.
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Mobility parameters
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mobmod=1
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Mobility model selector.
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u0=670
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Low-field surface mobility at tnom. Default is 250 for PMOS Mobility can also be specified in M2/Vs.
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vsat=8e4 m/s
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Carrier saturation velocity at tnom.
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ua=2.25e-9 m/v
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First-order mobility reduction coefficient.
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ub=5.87e-19 m2/v2
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Second-order mobility reduction coefficient.
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uc=-4.65e-11 m/v2
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Body-bias dependence of mobility. Default is -0.046 and unit is 1/V for mobmod=3.
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Output resistance parameters
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drout=0.56
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DIBL effect on output resistance coefficient.
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pclm=1.3
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Channel length modulation coefficient.
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pdiblc1=0.39
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First coefficient of drain-induced barrier lowering.
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pdiblc2=8.6e-3
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Second coefficient of drain-induced barrier lowering.
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pdiblcb=0 1/V
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Body-effect coefficient for DIBL.
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pscbe1=4.24e8 V/m
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First coefficient of substrate current body effect.
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pscbe2=1e-5 m/v
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Second coefficient of substrate current body effect.
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pvag=0
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Gate dependence of Early voltage.
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delta=0.01 V
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Effective drain voltage smoothing parameter.
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Subthreshold parameters
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cdsc=2.4e-4 F/m2
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Source/drain and channel coupling capacitance.
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cdscb=0 F/m2 V
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Body-bias dependence of cdsc.
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cdscd=0 F/m2 V
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Drain-bias dependence of cdsc.
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nfactor=1
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Subthreshold swing coefficient.
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cit=0 F/m2
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Interface trap parameter for subthreshold swing.
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voff=-0.08 V
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Threshold voltage offset.
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dsub=drout
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DIBL effect in subthreshold region.
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eta0=0.08
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DIBL coefficient subthreshold region.
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etab=-0.07 1/V
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Body-bias dependence of et0.
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Substrate current parameters
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alpha0=0 m/v
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Substrate current impact ionization coefficient.
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alpha1=0 1/V
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Substrate current impact ionization coefficient.
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beta0=30 V
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Substrate current impact ionization exponent.
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Parasitic resistance parameters
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rsh=0 Ω/sqr
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Source/drain diffusion sheet resistance.
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rs=0 Ω
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Source resistance.
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rd=0 Ω
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Drain resistance.
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lgcs=0 m
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Gate-to-contact length of source side.
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lgcd=0 m
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Gate-to-contact length of drain side.
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rsc=0 Ω
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Source contact resistance.
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rdc=0 Ω
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Drain contact resistance.
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rss=0 Ω m
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Scalable source resistance.
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rdd=0 Ω m
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Scalable drain resistance.
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sc=infinity m
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Spacing between contacts.
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ldif=0 m
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Lateral diffusion beyond the gate.
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hdif=0 m
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Length of heavily doped diffusion.
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minr=0.001 Ω
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Minimum source/drain resistance.
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Junction diode model parameters
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js (A/m2)
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Bulk junction reverse saturation current density.
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jsw=0 A/m
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Sidewall junction reverse saturation current density.
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jssw=0 A/m
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Alias of jsw.
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is=1e-14 A
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Bulk junction reverse saturation current.
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n=1
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Junction emission coefficient.
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nj=1
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Junction emission coefficient.
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dskip=yes
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Use simple piece-wise linear model for diode currents below 0.1*iabstol. Possible values are yes and no.
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imelt=`imaxA'
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Explosion current.
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ijth (A)
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Alias to imelt.
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jmelt=`jmaxA/m'2
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Explosion current density.
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vnds=-1
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Reverse diode current transition point.
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nds=1
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Reverse bias slope coefficient.
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tt=0.0 s
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Transit time, spice compatible parameter.
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Overlap capacitance parameters
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cgso (F/m)
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Gate-source overlap capacitance.
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cgdo (F/m)
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Gate-drain overlap capacitance.
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cgbo=2 Dwc Cox F/m
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Gate-bulk overlap capacitance. The default value is 0 if version=3.0.
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meto=0 m
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Metal overlap in fringing field.
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cgsl=0 F/m
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Gate-source overlap capacitance in LDD region.
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cgdl=0 F/m
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Gate-drain overlap capacitance in LDD region.
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ckappa=0.6 V
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Overlap capacitance fitting parameter.
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Junction capacitance model parameters
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cbs=0 F
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Bulk-source zero-bias junction capacitance.
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cbd=0 F
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Bulk-drain zero-bias junction capacitance.
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cj=5e-4 F/m2
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Zero-bias junction bottom capacitance density.
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mj=1/2
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Bulk junction bottom grading coefficient.
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pb=1 V
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Bulk junction built-in potential.
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fc=0.5
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Forward-bias depletion capacitance threshold.
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cjsw=5e-10 F/m
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Zero-bias junction sidewall capacitance density.
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mjsw=0.33
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Bulk junction sidewall grading coefficient.
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pbsw=1 V
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Side-wall junction built-in potential.
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cjswg=cjsw F/m
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Zero-bias gate-side junction capacitance density.
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mjswg=mjsw
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Gate-side junction grading coefficient.
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pbswg=pbsw V
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Gate-side junction built-in potential.
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fcsw=0.5
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Side-wall forward-bias depletion capacitance threshold.
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Charge model selection parameters
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capmod=2
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Intrinsic charge model.
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nqsmod=0
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Non-quasi static model selector. Set to 1 to turn on nqs.
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acnqsmod=0
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AC Non-quasi static model selector. Set to 1 to turn on nqs.
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dwc=wint m
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Delta W for capacitance model.
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dlc=lint m
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Delta L for capacitance model.
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clc=1e-7 m
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Intrinsic capacitance fitting parameter.
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cle=0.6
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Intrinsic capacitance fitting parameter.
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cf (F/m)
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Fringe capacitance parameter.
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elm=5
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Elmore constant of the channel.
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vfbcv=-1
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Flat-band voltage for capmod=0.
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acde=1 m/v
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CV parameter.
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moin=15
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CV parameter.
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noff=1
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Transition parameter.
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voffcv=0
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Transition parameter.
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xpart=0
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Drain/source channel charge partition in saturation for BSIM charge model, use 0.0 for 40/60, 0.5 for 50/50, or 1.0 for 0/100.
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llc=ll m^lln
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Length dependence of delta L for CV.
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lwc=lw m^lwn
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Width dependence of delta L for CV.
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lwlc=lwl m^lwn+lln
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Area dependence of delta L for CV.
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wlc=wl m^wln
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Length dependence of delta W for CV.
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wwc=ww m^wwn
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Width dependence of delta W for CV.
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wwlc=wwl m^wln+wwn
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Area dependence of delta W for CV.
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wmlt=1.0
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Width shrink reduction factor.
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lmlt=1.0
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Length shrink reduction factor.
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Default for instance parameters
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w=5e-6 m
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Default channel width.
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l=5e-6 m
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Default channel length.
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as=0 m2
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Default area of source diffusion.
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ad=0 m2
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Default area of drain diffusion.
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ps=0 m
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Default perimeter of source diffusion.
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pd=0 m
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Default perimeter of drain diffusion.
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nrd=0 m/m
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Default number of squares of drain diffusion.
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nrs=0 m/m
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Default number of squares of source diffusion.
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version=3.1
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Model parameter "version" only accepts real number value, like 3.21 for version=3.2.1. The available versions are 3.1(3.1.0), 3.2(3.2.0), 3.21(3.2.1), 3.22(3.2.2), 3.23(3.2.3), 3.24(3.2.4) and 3.3(3.3.0).
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paramchk=1
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Model parameter checking selector.
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fullreinit=0
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Model parameter full reinit selector.
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level=11
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BSIM3v3 model selector. The available level are 11, 49 and 53.
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acm=0
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BSIM3v3 area calculation method selector.
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geo=0
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geometry selector.
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calcacm=0
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49 geometry factor.
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Temperature effects parameters
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tnom (C)
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Parameters measurement temperature. Default set by options.
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trise=0 C
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Temperature rise from ambient.
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tlev=0
|
DC temperature selector.
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tlevc=0
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AC temperature selector.
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eg=1.12452 V
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Energy band gap. Defaulted as 1.16 when spice compatible and 1.11 when tlev is 0 or 1 for spice.
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gap1=7.02e-4 V/C
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Band gap temperature coefficient.
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gap2=1108 C
|
Band gap temperature offset.
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eglev=0
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DC temperature selector.
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diomod=1
|
a flag to select junction model.diomod=1 junction model described in Common MOSFET Equations section will be used. diomod=0 Berkeley junction model is used.diomod=100 TSMC special diode model .
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kt1=-0.11 V
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Temperature coefficient for threshold voltage.
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kt1l=0 v m
|
Temperature coefficient for threshold voltage.
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kt2=0.022
|
Temperature coefficient for threshold voltage.
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at=3.3e4 m/s
|
Temperature coefficient for vsat.
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ua1=4.31e-9 m/v
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Temperature coefficient for ua.
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ub1=-7.61e-18 m2/v2
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Temperature coefficient for ub.
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uc1=-5.5e-11 m/v2
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Temperature coefficient for uc. Default is -0.056 for mobmod=3.
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prt=0 Ω
|
Temperature coefficient for Rds.
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trs=0 1/C
|
Temperature parameter for source resistance.
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trd=0 1/C
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Temperature parameter for drain resistance.
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ute=-1.5
|
Mobility temperature exponent.
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xti=3
|
Saturation current temperature exponent.
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pta=0 V/C
|
Junction potential temperature coefficient.
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tpb=0 V/C
|
Temperature coefficient for pb.
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ptp=0 V/C
|
Sidewall junction potential temperature coefficient.
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tpbsw=0 V/C
|
Temperature coefficient for pbsw.
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tpbswg=0 V/C
|
Temperature coefficient for pbswg.
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cta=0 1/C
|
Junction capacitance temperature coefficient.
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tcj=0 1/C
|
Temperature coefficient for cj.
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ctp=0 1/C
|
Sidewall junction capacitance temperature coefficient.
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tcjsw=0 1/C
|
Temperature coefficient for cjsw.
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tcjswg=0 1/C
|
Temperature coefficient for cjswg.
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Noise model parameters
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noimod=1
|
Noise model selector.
|
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kf=0
|
Flicker (1/f) noise coefficient.
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af=1
|
Flicker (1/f) noise exponent.
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ef=1
|
Flicker (1/f) noise frequency exponent.
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noia=1e20
|
Oxide trap density coefficient. Default is 9.9e18 for pmos.
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noib=5e4
|
Oxide trap density coefficient. Default is 2.4e3 for pmos.
|
|
noic=-1.4e-12
|
Oxide trap density coefficient. Default is 1.4e-12 for pmos.
|
|
noid=2e14
|
flicker noise subthreshold-above threshold transition coefficient.
|
|
wnoi=1e-5 m
|
Channel width at which noise parameters were extracted.
|
|
em=4.1e7 V/m
|
Maximum electric field.
|
|
flkmod=0
|
Flicker noise model (0 for Ids based model, 1 for gm based model).
|
|
gamma=2.0/3.0
|
Thermal noise coefficient.
|
|
nlev=2.0
|
49 noise selector.
|
|
gdsnoi=1.0
|
Channel thermal noise coefficient for 49 noise.
|
|
lintnoi=0 m
|
Lint offset for noise calculation.
|
Gate-Induced drain leakage parameters
|
agidl=0.0 1/Ω
|
Pre-exponential coefficient for GIDL.
|
|
bgidl=2.3e9 V/m
|
Exponential coefficient for GIDL.
|
|
cgidl=0.5 V3
|
Parameter for body-bias effect on GIDL.
|
|
egidl=0.8 V
|
Fitting parameter for band bending for GIDL.
|
|
agisl=agidl 1/Ω
|
Pre-exponential coefficient for GISL.
|
|
bgisl=bgidl V/m
|
Exponential coefficient for GISL.
|
|
cgisl=cgidl V3
|
Parameter for body-bias effect on GISL.
|
|
egisl=egidl V
|
Fitting parameter for band bending for GISL.
|
Gate leak current parameters
|
bforward=0
|
Forward gate leakage current coefficient in pow().
|
|
breverse=0
|
Reverse gate leakage current coefficient in pow().
|
|
cforward=0
|
Forward gate leakage current coefficient in exp().
|
|
creverse=0
|
Reverse gate leakage current coefficient in exp().
|
|
tcc=0
|
Gate leakage current temperature coefficient.
|
|
aigbinv=1.11e-2 F/g s/m
|
|
|
|
Parameter for Igb in inversion.
|
|
bigbinv=9.49e-4 F/g s/(m V)
|
|
|
Parameter for Igb in inversion.
|
|
cigbinv=0.006 1/V
|
Parameter for Igb in inversion.
|
|
eigbinv=1.1 V
|
Parameter for Igb in inversion.
|
|
nigbinv=3.0
|
Parameter for Igb in inversion.
|
|
aigbacc=1.36e-2 F/g s/m
|
|
|
Parameter for Igb in accumulation.
|
|
bigbacc=1.71e-3 F/g s/(m V)
|
|
|
|
Parameter for Igb in accumulation.
|
|
cigbacc=0.075 1/V
|
Parameter for Igb in accumulation.
|
|
nigbacc=1.0
|
Parameter for Igb in accumulation.
|
|
aigsd=1.36e-2(nmos) / 9.80e-3(pmos) F/g s/m
|
|
|
Parameter for Igs and Igd.
|
|
bigsd=1.71e-3(nmos) / 7.59e-4(pmos) F/g s/(m V)
|
|
|
Parameter for Igs and Igd.
|
|
cigsd=0.075(nmos) / 0.03(pmos) 1/V
|
|
|
Parameter for Igs and Igd.
|
|
aigc=1.36e-2(nmos) / 9.80e-3(pmos) F/g s/m
|
|
|
Parameter for Igcs and Igcd.
|
|
bigc=1.71e-3(nmos) / 7.59e-4(pmos) F/g s/(m V)
|
|
|
Parameter for Igcs and Igcd.
|
|
cigc=0.075(nmos) / 0.03(pmos) 1/V
|
|
|
Parameter for Igcs and Igcd.
|
|
nigc=1.0
|
Parameter for Igcs, Igcd ,Igs and Igd.
|
|
pigcd=1.0
|
Vds dependence of Igcs and Igcd.
|
|
dlcig=`Lintm'
|
Source/drain overlap length for Igs and Igd.
|
|
ntox=1.0
|
Exponent for the gate oxide ratio.
|
|
toxref=3.0e-9 m
|
Nominal gate oxide thickness for gate dielectric tunneling current model only.
|
|
poxedge=1.0
|
Factor for the gate oxide thickness in source/drain overlap regions.
|
|
igcmod=0
|
Gate-to-channel and gate-to-source, gate-to-drain tunneling model selector.
|
|
igbmod=0
|
Gate-to-substrate tunneling model selector.
|
Auto Model Selector parameters
|
wmax=1 m
|
Maximum channel width for which the model is valid.
|
|
wmin=0 m
|
Minimum channel width for which the model is valid.
|
|
lmax=1 m
|
Maximum channel length for which the model is valid.
|
|
lmin=0 m
|
Minimum channel length for which the model is valid.
|
Operating region warning control parameters
|
alarm=none
|
Forbidden operating region. Possible values are none, off, triode, sat, subth, and rev.
|
|
imax=1 A
|
Maximum allowable current.
|
|
jmax=1e8 A/m2
|
Maximum allowable current density.
|
|
bvj=infinity V
|
Junction reverse breakdown voltage.
|
|
vbox=3e9 tox V
|
Oxide breakdown voltage.
|
|
warn=on
|
Parameter to turn warnings on and off. Possible values are off and on.
|
|
apwarn=0
|
Warning message flag.
|
Safe Operating Areas Parameters
|
vds_max=infinity V
|
|
|
|
Maximum allowed voltage cross source and drain.
|
|
vgd_max=infinity V
|
|
|
|
Maximum allowed voltage cross gate and drain.
|
|
vgs_max=infinity V
|
|
|
|
Maximum allowed voltage cross gate and source/bulk.
|
|
vbd_max=infinity V
|
|
|
|
Maximum allowed voltage cross source/drain and bulk.
|
|
vbs_max=vbd_max V
|
Maximum allowed voltage cross source and bulk.
|
|
vgb_max=infinity V
|
|
|
|
Maximum allowed voltage cross gate and bulk.
|
|
vgdr_max=vgd_max V
|
|
|
|
Maximum allowed reverse voltage cross gate and drain.
|
|
vgsr_max=vgs_max V
|
|
|
|
Maximum allowed reverse voltage cross gate and source.
|
|
vgbr_max=vgb_max V
|
|
|
|
Maximum allowed reverse voltage cross gate and bulk.
|
|
vbsr_max=vbs_max V
|
|
|
|
Maximum allowed reverse voltage cross bulk and source.
|
|
vbdr_max=vbd_max V
|
|
|
|
Maximum allowed reverse voltage cross bulk and drain.
|
Length dependent parameters
|
lvtho=0
|
Length dependence of Vth0.
|
|
lvth0
|
Alias of lvtho.
|
|
lk1=0
|
Length dependence of k1.
|
|
lk2=0
|
Length dependence of k2.
|
|
lk3=0
|
Length dependence of k3.
|
|
lk3b=0
|
Length dependence of k3b.
|
|
lw0=0
|
Length dependence of w0.
|
|
lnlx=0
|
Length dependence of nlx.
|
|
lgamma1=0
|
Length dependence of gamma1.
|
|
lgamma2=0
|
Length dependence of gamma2.
|
|
lvbx=0
|
Length dependence of vbx.
|
|
lvbm=0
|
Length dependence of vbm.
|
|
ldvt0=0
|
Length dependence of dvt0.
|
|
ldvt1=0
|
Length dependence of dvt1.
|
|
ldvt2=0
|
Length dependence of dvt2.
|
|
ldvt0w=0
|
Length dependence of dvt0w.
|
|
ldvt1w=0
|
Length dependence of dvt1w.
|
|
ldvt2w=0
|
Length dependence of dvt2w.
|
|
la0=0
|
Length dependence of a0.
|
|
lb0=0
|
Length dependence of b0.
|
|
lb1=0
|
Length dependence of b1.
|
|
la1=0
|
Length dependence of a1.
|
|
la2=0
|
Length dependence of a2.
|
|
lags=0
|
Length dependence of ags.
|
|
lketa=0
|
Length dependence of keta.
|
|
lnsub=0
|
Length dependence of nsub.
|
|
lnch=0
|
Length dependence of nch.
|
|
lngate=0
|
Length dependence of ngate.
|
|
lxj=0
|
Length dependence of xj.
|
|
ldwg=0
|
Length dependence of dwg.
|
|
ldwb=0
|
Length dependence of dwb.
|
|
lxt=0
|
Length dependence of xt.
|
|
lrdsw=0
|
Length dependence of rdsw.
|
|
lprwb=0
|
Length dependence of prwb.
|
|
lprwg=0
|
Length dependence of prwg.
|
|
lwr=0
|
Length dependence of wr.
|
|
lu0=0
|
Length dependence of u0.
|
|
lvsat=0
|
Length dependence of vsat.
|
|
lua=0
|
Length dependence of ua.
|
|
lub=0
|
Length dependence of ub.
|
|
luc=0
|
Length dependence of uc.
|
|
ldrout=0
|
Length dependence of drout.
|
|
lpclm=0
|
Length dependence of pclm.
|
|
lpdiblc1=0
|
Length dependence of pdiblc1.
|
|
lpdiblc2=0
|
Length dependence of pdiblc2.
|
|
lpdiblcb=0
|
Length dependence of pdiblcb.
|
|
lpscbe1=0
|
Length dependence of pscbe1.
|
|
lpscbe2=0
|
Length dependence of pscbe2.
|
|
lpvag=0
|
Length dependence of pvag.
|
|
ldelta=0
|
Length dependence of delta.
|
|
lcdsc=0
|
Length dependence of cdsc.
|
|
lcdscb=0
|
Length dependence of cdscb.
|
|
lcdscd=0
|
Length dependence of cdscd.
|
|
lnfactor=0
|
Length dependence of nfactor.
|
|
lcit=0
|
Length dependence of cit.
|
|
lvoff=0
|
Length dependence of voff.
|
|
ldsub=0
|
Length dependence of dsub.
|
|
leta0=0
|
Length dependence of eta0.
|
|
letab=0
|
Length dependence of etab.
|
|
lalpha0=0
|
Length dependence of alpha0.
|
|
lalpha1=0
|
Length dependence of alpha1.
|
|
lbeta0=0
|
Length dependence of beta0.
|
|
lcgsl=0
|
Length dependence of cgsl.
|
|
lcgdl=0
|
Length dependence of cgdl.
|
|
lckappa=0
|
Length dependence of ckappa.
|
|
lclc=0
|
Length dependence of clc.
|
|
lcle=0
|
Length dependence of cle.
|
|
lcf=0
|
Length dependence of cf.
|
|
lelm=0
|
Length dependence of elm.
|
|
lvfbcv=0
|
Length-dependence of vfbc.
|
|
lvfb=0
|
Length dependence of lvfb.
|
|
lacde=0
|
Length dependence of acde.
|
|
lmoin=0
|
Length dependence of moin.
|
|
lnoff=0
|
Length dependence of noff.
|
|
lvoffcv=0
|
Length dependence of voffcv.
|
|
lkt1=0
|
Length dependence of kt1.
|
|
lkt1l=0
|
Length dependence of kt1l.
|
|
lkt2=0
|
Length dependence of kt2.
|
|
lat=0
|
Length dependence of at.
|
|
lua1=0
|
Length dependence of ua1.
|
|
lub1=0
|
Length dependence of ub1.
|
|
luc1=0
|
Length dependence of uc1.
|
|
lprt=0
|
Length dependence of prt.
|
|
lute=0
|
Length dependence of ute.
|
|
xl=0 m
|
Length variation due to masking and etching.
|
|
xlref=0 m
|
Length variation due to masking and etching.
|
|
lagidl=0.0
|
Length dependence of agidl.
|
|
lbgidl=0.0
|
Length dependence of bgidl.
|
|
lcgidl=0.0
|
Length dependence of cgidl.
|
|
legidl=0.0
|
Length dependence of egidl.
|
Width dependent parameters
|
wvtho=0
|
Width dependence of Vth0.
|
|
wvth0
|
Alias of wvtho.
|
|
wk1=0
|
Width dependence of k1.
|
|
wk2=0
|
Width dependence of k2.
|
|
wk3=0
|
Width dependence of k3.
|
|
wk3b=0
|
Width dependence of k3b.
|
|
ww0=0
|
Width dependence of w0.
|
|
wnlx=0
|
Width dependence of nlx.
|
|
wgamma1=0
|
Width dependence of gamma1.
|
|
wgamma2=0
|
Width dependence of gamma2.
|
|
wvbx=0
|
Width dependence of vbx.
|
|
wvbm=0
|
Width dependence of vbm.
|
|
wdvt0=0
|
Width dependence of dvt0.
|
|
wdvt1=0
|
Width dependence of dvt1.
|
|
wdvt2=0
|
Width dependence of dvt2.
|
|
wdvt0w=0
|
Width dependence of dvt0.
|
|
wdvt1w=0
|
Width dependence of dvt1w.
|
|
wdvt2w=0
|
Width dependence of dvt2w.
|
|
wa0=0
|
Width dependence of a0.
|
|
wb0=0
|
Width dependence of b0.
|
|
wb1=0
|
Width dependence of b1.
|
|
wa1=0
|
Width dependence of a1.
|
|
wa2=0
|
Width dependence of a2.
|
|
wags=0
|
Width dependence of ags.
|
|
wketa=0
|
Width dependence of keta.
|
|
wnsub=0
|
Width dependence of nsub.
|
|
wnch=0
|
Width dependence of nch.
|
|
wngate=0
|
Width dependence of ngate.
|
|
wxj=0
|
Width dependence of xj.
|
|
wdwg=0
|
Width dependence of dwg.
|
|
wdwb=0
|
Width dependence of dwb.
|
|
wxt=0
|
Width dependence of xt.
|
|
wrdsw=0
|
Width dependence of rdsw.
|
|
wprwb=0
|
Width dependence of prwb.
|
|
wprwg=0
|
Width dependence of prwg.
|
|
wwr=0
|
Width dependence of wr.
|
|
wu0=0
|
Width dependence of u0.
|
|
wvsat=0
|
Width dependence of vsat.
|
|
wua=0
|
Width dependence of ua.
|
|
wub=0
|
Width dependence of ub.
|
|
wuc=0
|
Width dependence of uc.
|
|
wdrout=0
|
Width dependence of drout.
|
|
wpclm=0
|
Width dependence of pclm.
|
|
wpdiblc1=0
|
Width dependence of pdiblc1.
|
|
wpdiblc2=0
|
Width dependence of pdiblc2.
|
|
wpdiblcb=0
|
Width dependence of pdiblcb.
|
|
wpscbe1=0
|
Width dependence of pscbe1.
|
|
wpscbe2=0
|
Width dependence of pscbe2.
|
|
wpvag=0
|
Width dependence of pvag.
|
|
wdelta=0
|
Width dependence of delta.
|
|
wcdsc=0
|
Width dependence of cdsc.
|
|
wcdscb=0
|
Width dependence of cdscb.
|
|
wcdscd=0
|
Width dependence of cdscd.
|
|
wnfactor=0
|
Width dependence of nfactor.
|
|
wcit=0
|
Width dependence of cit.
|
|
wvoff=0
|
Width dependence of voff.
|
|
wdsub=0
|
Width dependence of dsub.
|
|
weta0=0
|
Width dependence of eta0.
|
|
wetab=0
|
Width dependence of etab.
|
|
walpha0=0
|
Width dependence of alpha0.
|
|
walpha1=0
|
Width dependence of alpha1.
|
|
wbeta0=0
|
Width dependence of beta0.
|
|
wcgsl=0
|
Width dependence of cgsl.
|
|
wcgdl=0
|
Width dependence of cgdl.
|
|
wckappa=0
|
Width dependence of ckappa.
|
|
wclc=0
|
Width dependence of clc.
|
|
wcle=0
|
Width dependence of cle.
|
|
wcf=0
|
Width dependence of cf.
|
|
welm=0
|
Width dependence of el.
|
|
wvfbcv=0
|
Width-dependence of vfbcv.
|
|
wvfb=0
|
Width dependence of lvfb.
|
|
wacde=0
|
Width dependence of acde.
|
|
wmoin=0
|
Width dependence of moin.
|
|
wnoff=0
|
Width dependence of noff.
|
|
wvoffcv=0
|
Width dependence of voffcv.
|
|
wkt1=0
|
Width dependence of kt1.
|
|
wkt1l=0
|
Width dependence of kt1l.
|
|
wkt2=0
|
Width dependence of kt2.
|
|
wat=0
|
Width dependence of at.
|
|
wua1=0
|
Width dependence of ua1.
|
|
wub1=0
|
Width dependence of ub1.
|
|
wuc1=0
|
Width dependence of uc1.
|
|
wprt=0
|
Width dependence of prt.
|
|
wute=0
|
Width dependence of ute.
|
|
xw=0 m
|
Width variation due to masking and etching.
|
|
xwref=0 m
|
Width variation due to masking and etching.
|
|
wagidl=0.0
|
Width dependence of agidl.
|
|
wbgidl=0.0
|
Width dependence of bgidl.
|
|
wcgidl=0.0
|
Width dependence of cgidl.
|
|
wegidl=0.0
|
Width dependence of egidl.
|
Cross-term dependent parameters (Not listed)
|
pvtho=0
|
Product dependence of Vth0.
|
|
pvth0
|
Alias of pvtho.
|
|
pk1=0
|
Product dependence of k1.
|
|
pk2=0
|
Product dependence of k2.
|
|
pk3=0
|
Product dependence of k3.
|
|
pk3b=0
|
Product dependence of k3b.
|
|
pw0=0
|
Product dependence of w0.
|
|
pnlx=0
|
Product dependence of nlx.
|
|
pgamma1=0
|
Product dependence of gamma1.
|
|
pgamma2=0
|
Product dependence of gamma2.
|
|
pvbx=0
|
Product dependence of vbx.
|
|
pvbm=0
|
Product dependence of vbm.
|
|
pdvt0=0
|
Product dependence of dvt0.
|
|
pdvt1=0
|
Product dependence of dvt1.
|
|
pdvt2=0
|
Product dependence of dvt2.
|
|
pdvt0w=0
|
Product dependence of dvt0w.
|
|
pdvt1w=0
|
Product dependence of dvt1w.
|
|
pdvt2w=0
|
Product dependence of dvt2w.
|
|
pa0=0
|
Product dependence of a0.
|
|
pb0=0
|
Product dependence of b0.
|
|
pb1=0
|
Product dependence of b1.
|
|
pa1=0
|
Product dependence of a1.
|
|
pa2=0
|
Product dependence of a2.
|
|
pags=0
|
Product dependence of ags.
|
|
pketa=0
|
Product dependence of keta.
|
|
pnsub=0
|
Product dependence of nsub.
|
|
pnch=0
|
Product dependence of nch.
|
|
pngate=0
|
Product dependence of ngate.
|
|
pxj=0
|
Product dependence of xj.
|
|
pdwg=0
|
Product dependence of dwg.
|
|
pdwb=0
|
Product dependence of dwb.
|
|
pxt=0
|
Product dependence of xt.
|
|
prdsw=0
|
Product dependence of rdsw.
|
|
pprwb=0
|
Product dependence of prwb.
|
|
pprwg=0
|
Product dependence of prwg.
|
|
pwr=0
|
Product dependence of wr.
|
|
pu0=0
|
Product dependence of u0.
|
|
pvsat=0
|
Product dependence of vsat.
|
|
pua=0
|
Product dependence of ua.
|
|
pub=0
|
Product dependence of ub.
|
|
puc=0
|
Product dependence of uc.
|
|
pdrout=0
|
Product dependence of drout.
|
|
ppclm=0
|
Product dependence of pclm.
|
|
ppdiblc1=0
|
Product dependence of pdiblc1.
|
|
ppdiblc2=0
|
Product dependence of pdiblc2.
|
|
ppdiblcb=0
|
Product dependence of pdiblcb.
|
|
ppscbe1=0
|
Product dependence of pscbe1.
|
|
ppscbe2=0
|
Product dependence of pscbe2.
|
|
ppvag=0
|
Product dependence of pvag.
|
|
pdelta=0
|
Product dependence of delta.
|
|
pcdsc=0
|
Product dependence of cdsc.
|
|
pcdscb=0
|
Product dependence of cdscb.
|
|
pcdscd=0
|
Product dependence of cdscd.
|
|
pnfactor=0
|
Product dependence of nfactor.
|
|
pcit=0
|
Product dependence of cit.
|
|
pvoff=0
|
Product dependence of voff.
|
|
pdsub=0
|
Product dependence of dsub.
|
|
peta0=0
|
Product dependence of eta0.
|
|
petab=0
|
Product dependence of etab.
|
|
palpha0=0
|
Product dependence of alpha0.
|
|
palpha1=0
|
Product dependence of alpha1.
|
|
pbeta0=0
|
Product dependence of beta0.
|
|
pcgsl=0
|
Product dependence of cgsl.
|
|
pcgdl=0
|
Product dependence of cgdl.
|
|
pckappa=0
|
Product dependence of ckappa.
|
|
pclc=0
|
Product dependence of clc.
|
|
pcle=0
|
Product dependence of cle.
|
|
pcf=0
|
Product dependence of cf.
|
|
pelm=0
|
Product dependence of elm.
|
|
pvfbcv=0
|
Product dependence of vfbcv.
|
|
pvfb=0
|
Product dependence of lvfb.
|
|
pacde=0
|
Product dependence of acde.
|
|
pmoin=0
|
Product dependence of moin.
|
|
pnoff=0
|
Product dependence of noff.
|
|
pvoffcv=0
|
Product dependence of voffcv.
|
|
pkt1=0
|
Product dependence of kt1.
|
|
pkt1l=0
|
Product dependence of kt1l.
|
|
pkt2=0
|
Product dependence of kt2.
|
|
pat=0
|
Product dependence of at.
|
|
pua1=0
|
Product dependence of ua1.
|
|
pub1=0
|
Product dependence of ub1.
|
|
puc1=0
|
Product dependence of uc1.
|
|
pprt=0
|
Product dependence of prt.
|
|
pute=0
|
Product dependence of ute.
|
|
pagidl=0.0
|
Cross-term dependence of agidl.
|
|
pbgidl=0.0
|
Cross-term dependence of bgidl.
|
|
pcgidl=0.0
|
Cross-term dependence of cgidl.
|
|
pegidl=0.0
|
Cross-term dependence of egidl.
|
DC-mismatch dependent parameters
|
mvtwl=0.0 v m
|
Threshold mismatch area dependence.
|
|
mvtwl2=0.0 v m^1.5
|
|
|
|
Threshold mismatch area square dependence.
|
|
mvt0=0.0 V
|
Threshold mismatch intercept.
|
|
mbewl=0.0 m
|
Beta mismatch area dependence.
|
|
mbe0=0.0
|
Beta mismatch intercept.
|
|
mismatchmod=0
|
select Mismatch mode. The available modes are 0, 1, 2 and 3.
|
|
mismatchdist=0 m
|
Mismatch Distance.
|
LOD model parameters
|
stimod=1
|
LOD stress effect model selector. 0 for no LOD, 1 for UCB LOD, 2 for TSMC LOD.
|
|
sa0=1e-6 m
|
reference distance between od edge to poly of one side.
|
|
saref (m)
|
Alias to Sa0.
|
|
sb0=1e-6 m
|
reference distance between od edge to poly of the other side.
|
|
sbref (m)
|
Alias to sb0.
|
|
wlod=0 m
|
length parameter for stress effect.
|
|
ku0=0 m
|
mobility degradation/enhancement coefficient for stress effect.
|
|
kvsat=0
|
saturation velocity degradation/enhancement parameter for stress effect.
|
|
kvth0=0 v m
|
threshold shift parameter for stress effect.
|
|
tku0=0
|
temperature coefficient of ku0.
|
|
llodku0=0
|
length parameter for u0 stress effect.
|
|
wlodku0=0
|
width parameter for u0 stress effect.
|
|
llodvth=0
|
length parameter for vth stress effect.
|
|
wlodvth=0
|
width parameter for vth stress effect.
|
|
lku0=0 m^llodku0
|
length dependence of ku0.
|
|
wku0=0 m^wlodku0
|
width dependence of ku0.
|
|
pku0=0 m^(llodku0+wlodku0)
|
|
|
cross-term dependence of ku0.
|
|
lkvth0=0 v m^llodku0
|
|
|
length dependence of kvth0.
|
|
wkvth0=0 v m^wlodku0
|
|
|
width dependence of kvth0.
|
|
pkvth0=0 v m^(llodku0+wlodku0)
|
|
|
cross-term dependence of kvth0.
|
|
stk2=0 m
|
k2 shift factor related to vth0 change.
|
|
lodk2=0
|
k2 shift modification factor for stress effect.
|
|
steta0=0 m
|
eta0 shift factor related to vth0 change.
|
|
lodeta0=0
|
eta0 shift modification factor for stress effect.
|
|
wpemod=0
|
Flag for WPE model (WPEMOD=1 to activate this model) .
|
|
web=0.0
|
Coefficient for SCB.
|
|
wec=0.0
|
Coefficient for SCC.
|
|
kvth0we=0.0 V
|
Threshold shift factor for well proximity effect .
|
|
k2we=0.0
|
K2 shift factor for well proximity effect.
|
|
lkvth0we=0.0 V
|
Length dependence of kvth0we.
|
|
wkvth0we=0.0 V
|
Width dependence of kvth0we .
|
|
pkvth0we=0.0 V
|
Cross-term dependence of kvth0we .
|
|
lk2we=0.0
|
Length dependence of k2we.
|
|
wk2we=0.0
|
Width dependence of k2we.
|
|
pk2we=0.0
|
Cross-term dependence of k2we.
|
|
ku0we=0.0
|
Mobility degradation factor for well proximity effect .
|
|
lku0we=0.0
|
Length dependence of ku0we.
|
|
wku0we=0.0
|
Width dependence of ku0we.
|
|
pku0we=0.0
|
Cross-term dependence of ku0we.
|
|
scref=1.0e-6 m
|
Reference distance to calculate SCA, SCB and SCC .
|
TSMC junction diode model parameters
|
jtss=0 A/m2
|
Source bottom trap-assisted saturation current density.
|
|
jtsd=0 A/m2
|
Drain bottom trap-assisted saturation current density.
|
|
jtssws=0 A/m
|
Source isolation-edge sidewall trap-assisted saturation current density.
|
|
jtsswd=0 A/m
|
Drain isolation-edge sidewall trap-assisted saturation current density.
|
|
jtsswgs=0 A/m
|
Source Gate-edge isolation-edge sidewall trap-assisted saturation current density.
|
|
jtsswgd=0 A/m
|
Drain isolation-edge sidewall trap-assisted saturation current density.
|
|
njts=60
|
Non-ideality factor for Jtss and Jtsd.
|
|
njtssw=60
|
Non-ideality factor for Jtssws and Jtsswd.
|
|
njtsswg=20
|
Non-ideality factor for Jtsswgs and Jtsswgd.
|
|
njtsd=njts
|
Non-ideality factor for jtsd.
|
|
njtsswd=njtssw
|
Non-ideality factor for jtsswd.
|
|
njtsswgd=njtsswg
|
Non-ideality factor for jtsswgd.
|
|
mnr=21
|
Fitting parameter for resistance induced non-ideality factor.
|
|
bnr=0
|
Fitting parameter for resistance induced non-ideality factor.
|
|
cnr=0 1/v m
|
Fitting parameter for resistance induced non-ideality factor.
|
|
dnr=0 1/v
|
Fitting parameter for resistance induced non-ideality factor.
|
|
xtss=0.02
|
Power dependence of Jtss on temperature.
|
|
xtsd=0.02
|
Power dependence of Jtsd on temperature.
|
|
xtssws=0.02
|
Power dependence of Jtssws on temperature.
|
|
xtsswd=0.02
|
Power dependence of Jtsswd on temperature.
|
|
xtsswgs=0.02
|
Power dependence of Jtsswgs on temperature.
|
|
xtsswgd=0.02
|
Power dependence of Jtsswgd on temperature.
|
|
tnjts=0
|
Temperature coefficient for NJTS.
|
|
tnjtssw=0
|
Temperature coefficient for njtssw.
|
|
tnjtsswg=0
|
Temperature coefficient for njtsswg.
|
|
tnjtsd=tnjts
|
Temperature coefficient for njtsd.
|
|
tnjtsswd=tnjtsssw
|
|
|
|
Temperature coefficient for njtsswd.
|
|
tnjtsswgd=tnjtsswg
|
|
|
|
Temperature coefficient for njtsswgd.
|
|
tmnr=0
|
Temperature coefficient for mnr.
|
|
tcnr=0
|
Temperature coefficient for cnr.
|
|
tdnr=0
|
Temperature coefficient for dnr.
|
|
jsswg=0
|
Sidewall-gate junction reverse saturation current density.
|
|
xjbv=1.0
|
Fitting parameter for diodes breakdown.
|
|
ijthrev=0.1
|
Reverse maximum allowable current.
|
|
nrfwd=1.0
|
Nominal value of Nr for forward linearization.
|
|
vtss=10.0 V
|
Source bottom trap-assisted voltage dependent parameter.
|
|
vtsd=`vtssV'
|
Drain bottom trap-assisted voltage dependent parameter.
|
|
vtssws=10.0 V
|
Source STI sidewall trap-assisted voltage dependent parameter.
|
|
vtsswd=`vtsswsV'
|
Drain STI sidewall trap-assisted voltage dependent parameter.
|
|
vtsswgs=10.0 V
|
Source gate-edge sidewall trap-assisted voltage dependent parameter.
|
|
vtsswgd=`vtsswgsV'
|
|
|
|
Drain gate-edge sidewall trap-assisted voltage dependent parameter.
|
Shrink Parameters
|
shrink=0
|
linear shrink parameter.
|
|
shrink2=0
|
area shrink parameter.
|
|
msgskip=off
|
Skip some warning message customer requested. Possible values are off and on.
|
|
compatible=spectre
|
|
|
|
Encourage device equations to be compatible with a foreign simulator. This option does not affect input syntax. Possible values are spectre, spice2, spice3, cdsspice, spiceplus, eldo, sspice, mica, tispice, and pspice.
|
Imax and Imelt
The imax parameter aids convergence and prevents numerical overflow. The junction characteristics of the device are accurately modeled for current up to imax. If imax is exceeded during iterations, the linear model is substituted until the current drops below 'imax' or until convergence is achieved. If convergence is achieved with the current exceeding imax, the results are inaccurate, and a warning is printed out.
A separate model parameter, imelt, is used as a limit warning for the junction current. This parameter can be set to the maximum current rating of the device. When any component of the junction current exceeds imelt, the base and collector currents are composed of many exponential terms, a warning will be issued and the results become inaccurate. The junction current is linearized above the value of imelt to prevent arithmetic exception, with the exponential term replaced by a linear equation at imelt.
Both of these parameters have current density counterparts, jmax and jmelt, that you can specify if you want the absolute current values to depend on the device area.
Auto Model Selection
Many models need to be characterized for different geometries in order to obtain accurate results for model development. The model selector program automatically searches for a model with the length and width range specified in the instance statement and uses this model in the simulations.
For the auto model selector program to find a specific model, the models to be searched should be grouped together within braces. Such a group is called a model group. An opening brace is required at the end of the line defining each model group. Every model in the group is given a name followed by a colon and the list of parameters. Also, the four geometric parameters lmax, lmin, wmax, and wmin should be given. The selection criteria to choose a model is as follows:
lmin <= inst_length < lmax and wmin <= inst_width < wmax
Example:
model ModelName ModelType {
1: <model parameters> lmin=2 lmax=4 wmin=1 wmax=2
2: <model parameters> lmin=1 lmax=2 wmin=2 wmax=4
3: <model parameters> lmin=2 lmax=4 wmin=4 wmax=6
}
Then for a given instance
M1 1 2 3 4 ModelName w=3 l=1.5
the program would search all the models in the model group with the name ModelName and then pick the first model whose geometric range satisfies the selection criteria. In the preceding example, the auto model selector program would choose ModelName.2.
You must specify both length (l) and width (w) on the device instance line to enable automatic model selection.
Output Parameters
|
tempeff (C)
|
Effective temperature for a single device.
|
|
meff
|
Effective multiplicity factor (m-factor).
|
|
weff (m)
|
Effective channel width (alias=lv2).
|
|
leff (m)
|
Effective channel length (alias=lv1).
|
|
rseff (Ω)
|
Effective source resistance (alias=lv17).
|
|
rdeff (Ω)
|
Effective drain resistance (alias=lv16).
|
|
aseff (m2)
|
Effective source area (alias=lv4).
|
|
adeff (m2)
|
Effective drain area (alias=lv3).
|
|
pseff (m)
|
Effective source perimeter (alias=lv12).
|
|
pdeff (m)
|
Effective drain perimeter (alias=lv11).
|
Operating-Point Parameters
|
region=triode
|
Estimated operating region. Spectre generates output number (0-4) in a rawfile. Possible values are off, triode, sat, subth, and breakdown.
|
|
trise (C)
|
Temperature rise from ambient.
|
|
reversed
|
Reverse mode indicator. Possible values are yes and no.
|
|
ids (A)
|
Resistive drain-to-source current (alias=lx4).
|
|
isub (A)
|
substrate current (alias=lx50).
|
|
vgs (V)
|
Gate-source voltage.
|
|
vds (V)
|
Drain-source voltage (alias=lx3).
|
|
vbs (V)
|
Bulk-source voltage.
|
|
vgb (V)
|
gate-bulk voltage.
|
|
vdb (V)
|
Drain-bulk voltage.
|
|
vgd (V)
|
Gate-Drain voltage.
|
|
vth (V)
|
Threshold voltage (alias=lv9).
|
|
vdsat (V)
|
Drain-source saturation voltage (alias=lv10).
|
|
vfbeff (V)
|
Vfb effective (alias=lv26).
|
|
gm (S)
|
Common-source transconductance (alias=lx7).
|
|
gds (S)
|
Common-source output conductance (alias=lx8).
|
|
gmbs (S)
|
Body-transconductance (alias=lx9).
|
|
betaeff (A/V2)
|
Effective beta.
|
|
cjd (F)
|
Drain-bulk junction capacitance (alias=lx29).
|
|
cjs (F)
|
Source-bulk junction capacitance (alias=lx28).
|
|
qb (Coul)
|
total bulk charge (alias=lx12).
|
|
qg (Coul)
|
Total gate charge (alias=lx14).
|
|
qd (Coul)
|
Total drain charge (alias=lx16).
|
|
qbd (Coul)
|
Drain-bulk charge (alias=lx24).
|
|
qbs (Coul)
|
Source-bulk charge (alias=lx26).
|
|
cgg (F)
|
dQg_dVg (alias=lx18).
|
|
cgd (F)
|
dQg_dVd (alias=lx19).
|
|
cgs (F)
|
dQg_dVs (alias=lx20).
|
|
cgb (F)
|
dQg_dVbk.
|
|
cdg (F)
|
dQd_dVg (alias=lx32).
|
|
cdd (F)
|
Total drain capacitance (including intrinsic, overlap and fringing components, and junction capacitance) (alias=lx33).
|
|
cds (F)
|
dQd_dVs (alias=lx34).
|
|
cdb (F)
|
dQd_dVb.
|
|
csg (F)
|
dQs_dVg.
|
|
csd (F)
|
dQs_dVd.
|
|
css (F)
|
dQs_dVs.
|
|
csb (F)
|
dQs_dVb.
|
|
cbg (F)
|
dQb_dVg (alias=lx21).
|
|
cbd (F)
|
dQb_dVd (alias=lx22).
|
|
cbs (F)
|
dQb_dVs (alias=lx23).
|
|
cbb (F)
|
dQb_dVb.
|
|
ron (Ω)
|
On-resistance.
|
|
id (A)
|
Resistive drain current (alias=i1).
|
|
is (A)
|
Resistive source current (alias=i3).
|
|
ibulk (A)
|
Resistive bulk current (alias=i4).
|
|
ibs (A)
|
Source-bulk diode current (alias=lx5).
|
|
ibd (A)
|
Drain-bulk diode current (alias=lx6).
|
|
pwr (W)
|
Power at op point.
|
|
gmoverid (1/V)
|
Gm/Ids.
|
|
ueff
|
ueff.
|
|
cgsovl (F)
|
Gate-source overlap and fringing capacitance (alias=lv36).
|
|
cgdovl (F)
|
Gate-drain overlap and fringing capacitance (alias=lv37).
|
|
cgbovl (F)
|
Gate-bulk overlap capacitance (alias=lv38).
|
|
i1 (A)
|
Alias for id.
|
|
i3 (A)
|
Alias of Resistive source current.
|
|
i4 (A)
|
Alias of Resistive bulk current.
|
|
gbd (S)
|
Conductance of the drain diode (alias=lx10).
|
|
gbs (S)
|
Conductance of the source diode (alias=lx11).
|
|
vgsteff (V)
|
effective vgs.
|
|
qinv (Coul)
|
inversion charge.
|
|
igd (A)
|
Gate-to-drain leakage current.
|
|
igs (A)
|
Gate-to-source leakage current.
|
|
igb (A)
|
Gate-to-bulk tunneling current.
|
|
igcs (A)
|
Gate-to-channel (source side) tunneling current.
|
|
igcd (A)
|
Gate-to-channel (drain side) tunneling current.
|
|
igidl (A)
|
Gate-induced drain leakage current.
|
|
igisl (A)
|
Gate-induced source leakage current.
|
|
qgi (Coul)
|
Intrinsic Gate charge.
|
|
qsi (Coul)
|
Intrinsic Source charge.
|
|
qdi (Coul)
|
Intrinsic Drain charge.
|
|
qbi (Coul)
|
Intrinsic Bulk charge.
|
|
cddbi (F)
|
Intrinsic drain capacitance.
|
|
cssbi (F)
|
Intrinsic source capacitance.
|
|
cggbi (F)
|
Intrinsic gate capacitance.
|
|
cgsbi (F)
|
Intrinsic gate-to-source capacitance.
|
|
cgdbi (F)
|
Intrinsic gate-to-drain capacitance.
|
|
cbdbi (F)
|
Intrinsic bulk-to-drain capacitance.
|
|
cbsbi (F)
|
Intrinsic bulk-to-source capacitance.
|
|
qsrco (Coul)
|
Total Source charge (Charge Conservation: QS=-(QG+QD+QB)).
|
|
ide (A)
|
Total DC drain current .
|
|
ige (A)
|
Total DC gate current .
|
|
ise (A)
|
Total DC source current .
|
|
ibe (A)
|
Total DC bulk current .
|
|
idb (A)
|
DC drain-bulk current .
|
|
isb (A)
|
DC source-bulk current .
|
|
vsb (V)
|
Source-Bulk DC voltage .
|
|
gmb (S)
|
DC bulk transconductance .
|
|
vgt (V)
|
Effective gate drive voltage including back bias drain bias effects .
|
|
vdss (V)
|
Drain saturation voltage at actual bias .
|
|
vsat_marg (V)
|
Vds margin .
|
|
self_gain
|
Transistor self gain .
|
|
rout (Ω)
|
AC output resistor .
|
|
beff (A/V2)
|
Gain factor in saturation .
|
|
fug (Hz)
|
Unity current gain frequency at actual bias .
|
|
vearly (V)
|
Equivalent early voltage.
|
|
ft (Hz)
|
Unity current gain frequency at actual bias.
|
|
vth_drive (V)
|
Effective gate drive voltage including back bias drain bias effects.
|
|
vdsat_marg (V)
|
Vds margin.
|
|
tk (K)
|
Effective temperature for a single device.
|
|
ib (A)
|
Total DC bulk current.
|
|
ig (A)
|
Total DC gate current.
|
|
opdef
|
1: Device Physics notation. 2: Circuit Simulator notation.
|
|
ctype
|
Flag for channel type of MOSFET. 1: NMOS. -1: PMOS.
|
|
sdop
|
Operation mode related to channel type and drain-source voltage sign.
Possible values are Forward and Reverse.
|
|
sdint
|
Flag for source-drain interchange. 1: No S-D interchange, -1: S-D interchange.
|
|
dtsh (K)
|
Device temperature rise due to self-heating.
|
|
Iavl (A)
|
Weak avalanche current.
|
|
vth0 (V)
|
Zero-bias threshold voltage, excluding back-bias (body effect) and drain-bias effect (DIBL).
|
|
go (S)
|
Output conductance.
|
|
co (F)
|
Output Drain-Source capacitance.
|
|
cm (F)
|
Capacitance element 1 for QS model.
|
|
cmb (F)
|
Capacitance element 2 for QS model.
|
|
cmx (F)
|
Capacitance element 3 for QS model.
|
|
tau1 (F)
|
Time constant related to NQS first frequency pole.
|
|
fqslim (F)
|
QS model frequency limit.
|
|
gmoveri (1/V)
|
Transconductance efficiency (Gm over Id or Is ratio).
|
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