BSIM4 Version 4

BSIM4.4 has the following updates.

Trap-Assisted-Tunneling Current

(-230)

Flatband Voltage Offset Parameter

VFBSDOFF is an offset voltage added to the original source/drain flatband voltage which allows independent setting of V_fbsd to accurately model gate overlap tunneling current.

(-231)

Length Reduction Parameter Offset

BSIM4.4 has a new parameter LINTNOI which is an offset to the length reduction parameter (Lint) for flicker noise.

For fnoiMod=1 (unified model), the noise density in the inversion region is:

(-232)

New Temperature Model

(-233)

(-234)

(-235)

(-236)

(-237)

(-238)

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