Model History and Development

PSP103.0 (SiMKit3.2)

• Implemented in MMSIM7.1.1 in June 2009

PSP103.1 (SiMKit3.3)

• Implemented in MMSIM7.2 in December 2010

Changes

• • Added external sheet resistance RSHD for drain diffusion (used when SWJUNASYM=1)
  • Extended NUD model to allow retrograde profiles (GFACNUD>1)
  • Added value of gate resistance to OP-output
  • Bug fix and minor implementation change in NUD-model
  • Minor bug fix in conditional for SP-calculation of overlap areas

PSP103.1.1 (SiMKit3.4)

• Implemented in MMSIM10.1 in June 2010

Changes

• • Modified implementation of the asymmetrical junction model to improve simulation speed of the verilog-A code.
  • Modified implementation of the MULT-scaling factor.
  • Modified implementation of the NUD model.
  • Modified implementation of the stand-alone JUNCAP2 model.
  • Minor bug fix for the output of sfl, sqrtsfw, and fknee

PSP103.2 (SiMKit4.0.1)

• Implemented in MMSIM12.1.1 in May 2013

Changes

• • Introduction of self heating. The self heating version has an additional temperature terminal dt, thermal resistance RTH, and thermal capacitance CTH. Geometry scaling rules for RTH and CTH, as well as temperature dependence of RTH are also provided.
  • Implementation of the thermal noise model has been improved:
    • A bug in the sign of the correlation coefficient for negative Vds has been fixed
    • Gummel symmetry of Sid at high frequencies has been improved
    • Number of white_noise sources has been reduced and the noise voltage values in the noise-subcircuit have been scaled to more physical values (simulation results are not affected).
  • The calculation of the surface potential in the gate-diffusion overlap region has been simplified to improve simulation speed of verilog-A code.
  • The expression for qlim2 in QM correction has been modified to avoid unphysical behavior when oxide thickness is large. This modification is relevant for high-k dielectrics.
  • Minor bugs in the calculation of OP-output variables have been fixed.
  • Minor implementation changes have been made.
  • Few OP-output variables have been added.

PSP103.3

• Implemented in MMSIM13.1 ISR10 in July 2014

Changes

• • Excess noise, important for sub-100 nm channel lengths has been added. This is backward-compatible with PSP103.2 version.
  • Following new parameters have been added:
    • FNTEXC (local model)
    • FNTEXCL (global model)
    • POFNTEXC, PLFNTEXC, PWFNTEXC, and PLWFNTEXC (binning model)
  • Missing T-scaling in OP output variables lp_bgidl and lp_bgidld has been fixed.

PSP103.4

• Implemented in MMSIM15.1 ISR15 in Feb 2017

Changes

• Addition of edge MOSFET for modeling of subthreshold hump effect.
• New model parameter SWIGN to active/disable the induced gate noise.
• New parameters for modeling of short channel effects on subthreshold slope.
• New local and global parameters for DIBL
• Minor bug fixes.
• Minor implementation changes have been made.
• New OP-output variables for edge transistor.

PSP103.5

• Implemented in SPECTRE16.1ISR6 in May 2017

Changes

• New mobility parameters for coulomb scattering effect: THECS, STTHECS (local model), THECSO, STTHECSO (global model), and POTHECS, POSTTHECS (binning model).
• New parameters added for quadratic temperature dependence of flatband voltage: ST2VFB (local model), ST2VFBO (global model), and POST2VFB (binning model).

PSP103.6

• Implemented in SPECTRE18.1in June 2018. PSP103.6 is backward compatible with PSP103.5.

Changes

• Induced gate noise: clipped value of migid using the correlation factor c_igid.
• Thermal noise of edge transistor is fixed to avoid possible division by zero during the calculation of redge.
• New model for interface states; improved gm/Id in weak inversion.
• Addition of new parameter for exponent for channel length dependence of edge transistor substrate doping: NSUBEDGELEXP
• Minimum values of local parameters NOV and NOVD in the global mode is now in line with minimum values of local model parameters.

PSP103.7

PSP 103.7 is backwards compatible with PSP 103.6.

Changes

• Gate leakage currents: Addition of parameters for overlaps gate leakage currents CG2OV, CG3OV (local model), CG2OVO, CG3OVO (global model), and POCG2OV, POCG3OV (binning model).
• Charge partitioning: Addition of new switch parameter SWQPART to modify the charge partitioning between the drain and the source.
• Charge model in saturation by setting SWQSAT=1. Parameters added for charge model to improve CV description in saturation.

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