l=10.0E-06

Gate's length.

w=10.0E-06

Gate's width.

nf=1

Number of fingers.

m=1

Number of devices in parallel.

ad=0.0

Drain's area.

as=0.0

Source's area.

pd=0.0

Drain's perimeter.

ps=0.0

Source's perimeter.

sa=0.0

Sti parameter; distance from sti (side a).

sb=0.0

Sti parameter; distance from sti (side b).

sd=0.0

Sti parameter; distance between gates.

trise=0.0

Temperature change for particular transistor.

isnoisy=yes

Should device generate noise. Possible values are yes and no.

version=301.02

Parameter for version control. Valid values are 301.02 and 302.00. The default version is 301.02.

sign=1

Sign = 1 for nmos; sign = -1 for pmos.

tg=(-1)

Type of gate: -1 enhancement type; 1 depletion type.

tnom=27.0

Nominal temperature for model parameters.

scale=1.0

Scaling size factor.

xl=0.0

Optical offset for channel length.

xw=0.0

Optical offset for channel width.

nqs_noi=1.0

Flag turning on nqs thermal noise model. At a time, only one of nqs_noi and th_noi should be set to 1.

th_noi=0.0

Flag turning on short channel effects thermal noise model. At a time, only one of nqs_noi and th_noi should be set to 1.

info_level=0.0

Flag for information printout. currently only value of 1 is supported.

qoff=0.0

Flag for turning off the dynamic behavior of the model (for debugging purposes).

avto=0.0

Matching parameter for threshold voltage (vto).

agamma=0.0

Matching parameter for body factor (gamma).

akp=0.0

Matching parameter for mobility (kp).

cox=0.012

Oxide capacitance per unit area.

xj=20.0E-09

Depth of junction (source and drain).

vto=0.3

Threshold voltage.

phif=0.45

Fermi bulk potential.

gamma=0.3

Body effect coefficient.

gammag=4.1

Gate doping coefficient for polysilicon depletion effect.

n0=1.0

Weak inversion fine tuning parameter.

vbi=0.0

Built-in voltage drop-off. if left to default zero value, it is set to the nominal value of 3ut higher than phi..

aqma=0.5

Quantum mechanical effect accumulation region coefficient.

aqmi=0.4

Quantum mechanical effect inversion region coefficient.

etaqm=0.75

Quantum mechanical effect accumulation eta parameter.

kp=500.0E-06

Mobility (multiplied by cox) parameter.

e0=1.0E+10

First order parameter for mobility reduction due to vertical field effect.

e1=3.1E+08

Second order parameter for mobility reduction due to vertical field effect.

eta=0.5

Inversion charge coefficient for vertical field calculation.

thc=0.0

Coulomb scattering parameter.

zc=1.0E-6

Coulomb scattering inversion charge coefficient.

la=1.0

Critical length a of mobility length scaling.

lb=1.0

Critical length b of mobility length scaling.

ka=0.0

Parameter for critical length a of mobility length scaling.

kb=0.0

Parameter for critical length b of mobility length scaling.

wkp1=1.0E-6

Critical width of mobility width scaling.

wkp2=0.0

Amplitude parameter for mobility width scaling.

wkp3=1.0

Span parameter for mobility width scaling.

dl=(-10.0E-9)

Effective length parameter.

dlc=0.0

Effective length parameter for dynamic behavior.

dw=(-10.0E-9)

Effective width parameter.

dwc=0.0

Effective width parameter for dynamic behavior.

wdl=0.0

Effective length parameter for narrow channel devices.

ldw=0.0

Effective width parameter for short channel devices.

ll=0.0

Base of exponential model for effective length.

lln=1.0

Exponent of exponential model for effective length.

avt=0.0

Parameter for long and wide channel vto correction.

lvt=1.0

Length for long and wide channel vto correction.

wvt=1.0

Width for long and wide channel vto correction.

agam=0.0

Parameter for long and wide channel gamma correction.

lgam=1.0

Length for long and wide channel gamma correction.

wgam=1.0

Width for long and wide channel gamma correction.

nfvta=0.0

Number of fingers for vto correction for multifinger devices (obsolete model by sti stress effect).

nfvtb=10000.0

Parameter for vto correction for multifinger devices (obsolete model by sti stress effect).

ucrit=5.0E+06

Critical velocity of velocity saturation effect.

delta=2.0

Variable order (from 1.0 to 2.0) of velocity saturation effect.

lambda=0.5

Length parameter for channel length modulation.

aclm=0.83

Fine tuning parameter for channel length modulation.

lr=50.0E-09

Length parameter for reverse short channel effect.

qlr=0.5E-3

Charge parameter for reverse short channel effect (vto).

nlr=10.0E-3

Doping parameter for reverse short channel effect (gamma).

flr=1.0

Fermi potential fine tuning parameter for reverse short channel effect (phif).

leta0=0.0

Length independent parameter for charge sharing (long channel).

leta=500.0E-3

Length scaling parameter for charge sharing.

leta2=0.0

Second order length scaling parameter for charge sharing (shortest channel).

weta=200.0E-3

Width scaling parameter for charge sharing.

ncs=1.0

Weak inversion slope parameter for charge sharing.

etad=1.0

Eta parameter for drain induced barrier lowering.

sigmad=1.0

Sigma parameter for drain induced barrier lowering.

wr=90.0E-09

Width parameter for inverse narrow channel effect.

qwr=0.3E-3

Charge parameter for inverse narrow channel effect (vto).

nwr=5.0E-3

Doping parameter for inverse narrow channel effect (gamma).

fprout=1.0E6

Output resistance parameter for drain induced threshold shift.

pdits=0.0

Parameter for drain induced threshold shift (if set to zero the dits effect is disabled).

pditsl=0.0

Length scaling parameter for drain induced threshold shift.

pditsd=1.0

Bias parameter for drain induced threshold shift.

ddits=0.3

Smooth factor of output conductance for drain induced threshold shift.

iba=000.0E+06

Parameter a of impact ionization current.

ibb=300.0E+06

Parameter b of impact ionization current.

ibn=1.0

Parameter n of impact ionization current.

xb=3.1

Silicon to silicon oxide tunneling barrier height.

eb=29.0E+09

Characteristic electrical field.

kg=00.0E-6

Mobility for gate current.

lovig=20.0E-9

Overlap gate length for overlap gate current.

agidl=0.0

Parameter a of gate induced drain leakage.

bgidl=2.3E+09

Parameter b of gate induced drain leakage.

cgidl=0.5

Parameter c of gate induced drain leakage.

egidl=0.8

Parameter e of gate induced drain leakage.

lfnoi=0

Flicker noise model selection.

kf=0.0

Flicker noise parameter.

af=1.0

Flicker noise frequency exponent.

ef=2.0

Flicker noise transconductance exponent.

nt=1.0E+14

Number of trapped carriers.

alphac=10.0E+4

Coulomb scattering coefficient.

alphah=1.0E-20

Hooge parameter for mobility fluctuation noise model.

kgfn=0.0

Gate flicker noise parameter.

ecn=1.0E+4

Critical field value.

sdr=1.0E-6

Series resistance noise parameter.

lwr=0.0

Length scaling parameter for wr.

lqwr=0.0

Length scaling parameter for qwr.

lnwr=0.0

Length scaling parameter for nwr.

ldphiedge=0.0

Length scaling parameter for dphiedge.

wlr=0.0

Width scaling parameter for lr.

wqlr=0.0

Width scaling parameter for qlr.

wnlr=0.0

Width scaling parameter for nlr.

wucrit=0.0

Width scaling parameter for ucrit.

wlambda=0.0

Width scaling parameter for lambda.

wetad=0.0

Width scaling parameter for etad.

we0=0.0

Width scaling parameter for e0.

we1=0.0

Width scaling parameter for e1.

wrlx=0.0

Width scaling parameter for rlx.

wucex=0.0

Width scaling parameter for ucex.

wdphiedge=0.0

Width scaling parameter for dphiedge.

wldphiedge=0.0

Fine tuning scaling for combined short and narrow devices for dphiedge.

wldgammaedge=0.0

Fine tuning scaling for combined short and narrow devices for dgammaedge.

wedge=0.0

Total effective width of edge device for edge conductance effect.

dgammaedge=0.0

Differential gamma parameter of edge device with respect to the main device.

dphiedge=0.0

Differential phi parameter of edge device with respect to the main device.

saref=0.0

Reference sa parameter for sti stress effect parameter extraction.

sbref=0.0

Reference sb parameter for sti stress effect parameter extraction.

wlod=0.0

Width effective parameter for sti stress effect.

kkp=0.0

Mobility parameter for sti stress effect.

lkkp=0.0

Length scaling of mobility for sti stress effect.

wkkp=0.0

Width scaling of mobility for sti stress effect.

pkkp=0.0

Area scaling of mobility for sti stress effect.

tkkp=0.0

Temperature scaling of mobility for sti stress effect.

llodkkp=1.0

Exponential length scaling parameter of mobility for sti stress effect.

wlodkkp=1.0

Exponential width scaling parameter of mobility for sti stress effect.

kvto=0.0

Threshold voltage parameter for sti stress effect.

lkvto=0.0

Length scaling of threshold voltage for sti stress effect.

wkvto=0.0

Width scaling of threshold voltage for sti stress effect.

pkvto=0.0

Area scaling of threshold voltage for sti stress effect.

llodkvto=1.0

Exponential length scaling parameter of threshold voltage for sti stress effect.

wlodkvto=1.0

Exponential width scaling parameter of threshold voltage for sti stress effect.

kgamma=0.0

Body effect coefficient parameter for sti stress effect.

lodkgamma=1.0

Fine tuning parameter for body effect coefficient scaling of sti stress effect.

ketad=0.0

Dibl effect parameter for sti stress effect.

lodketad=1.0

Fine tuning parameter for dibl effect parameter scaling of sti stress effect.

kucrit=0.0

Critical velocity of velocity saturation effect parameter for sti stress effect.

tcv=600.0E-6

Temperature scaling of threshold voltage.

bex=(-1.5)

Temperature scaling of mobility.

te0ex=0.5

Temperature scaling of e0.

te1ex=0.5

Temperature scaling of e1.

teta=(-0.9E-3)

Temperature scaling of eta parameter.

ucex=1.5

Temperature scaling of critical velocity of velocity saturation effect.

tlambda=0.0

Temperature scaling of lambda parameter.

ibbt=800.0E-6

Temperature scaling of ibb.

tcvl=0.0

Length scaling of tcv.

tcvw=0.0

Width scaling of tcv.

tcvwl=0.0

Area scaling of tcv.

gammaov=1.6

Body effect coefficient of the gate overlap region.

gammagov=10.0

Gate doping coefficient for polysilicon depletion effect of the gate overlap region.

vfbov=0.0

Flat-band voltage of the gate overlap region.

lov=20.0E-9

Effective length of the gate overlap region.

vov=1.0

Bias parameter of the overlap capacitances.

cgso=0.0

Bias-independent overlap capacitance per gate width unit between gate and source.

cgdo=0.0

Bias-independent overlap capacitance per gate width unit between gate and drain.

cgbo=0.0

Bias-independent overlap capacitance per gate length unit between gate and bulk.

kjf=0.0

Fringing capacitance parameter.

cjf=0.0

Bias scaling of fringing capacitance.

vfr=0.0

Built-in voltage fine tuning for fringing capacitance model.

dfr=1.0E-3

Smooth parameter of fringing capacitance model.

hdif=0.0e-6

Half length of the active area.

rsh=0.0

Square resistance of active area.

ldif=0.0

Distance between the middle of the active area and the start of the channel.

rs=0.0

Ldd source series resistance.

rd=0.0

Ldd drain series resistance.

rlx=(-1.0)

External series resistance per width unit.

rsx=(-1.0)

External series resistance per width unit, source side (asymmetric model).

rdx=(-1.0)

External series resistance per width unit, drain side (asymmetric model).

tr=0.0

First order resistance temperature scaling parameter.

tr2=0.0

Second order resistance temperature scaling parameter.

gmin=0.0

Minimum conductance of junction diodes.

njs=1.0

Slope factor for junction diode, source side (asymmetrical model).

xjbvs=0.0

Break-down effect coefficient for junction diode, source side (asymmetrical model).

bvs=10.0

Break-down voltage for junction diode, source side (asymmetrical model).

jss=0.0E-09

Area component of current for junction diode, source side (asymmetrical model).

jssws=0.0E-12

Sideways component of current for junction diode, source side (asymmetrical model).

jsswgs=0.0E-12

Gate-side component of current for junction diode, source side (asymmetrical model).

jtss=0.0E-09

Area component of trap-assisted current for junction diode, source side (asymmetrical model).

jtssws=0.0E-12

Sideways component of trap-assisted current for junction diode, source side (asymmetrical model).

jtsswgs=0.0E-12

Gateside component of trap-assisted current for junction diode, source side (asymmetrical model).

njtss=1.0

Area slope factor of trap-assisted current for junction diode, source side (asymmetrical model).

njtssws=1.0

Sideways slope factor of trap-assisted current for junction diode, source side (asymmetrical model).

njtsswgs=1.0

Gateside slope factor of trap-assisted current for junction diode, source side (asymmetrical model).

vtss=0.0

Area voltage factor of trap-assisted current for junction diode, source side (asymmetrical model).

vtssws=0.0

Sideways voltage factor of trap-assisted current for junction diode, source side (asymmetrical model).

vtsswgs=0.0

Gateside voltage factor of trap-assisted current for junction diode, source side (asymmetrical model).

cjs=0.0E-06

Area component of capacitance for junction diode, source side (asymmetrical model).

cjsws=0.0E-09

Sideways component of capacitance for junction diode, source side (asymmetrical model).

cjswgs=0.0E-09

Gateside component of capacitance for junction diode, source side (asymmetrical model).

pbs=0.800

Area parameter of capacitance for junction diode, source side (asymmetrical model).

pbsws=0.600

Sideways parameter of capacitance for junction diode, source side (asymmetrical model).

pbswgs=0.600

Gateside parameter of capacitance for junction diode, source side (asymmetrical model).

mjs=0.900

Area exponent of capacitance for junction diode, source side (asymmetrical model).

mjsws=0.700

Sideways exponent of capacitance for junction diode, source side (asymmetrical model).

mjswgs=0.700

Gateside exponent of capacitance for junction diode, source side (asymmetrical model).

xtis=3.0

Temperature dependence for junction diode, source side (asymmetrical model).

xtss=0.0

Area component of temperature dependence of trap-assisted current for junction diode, source side (asymmetrical model).

xtssws=0.0

Sideways component of temperature dependence of trap-assisted current for junction diode, source side (asymmetrical model).

xtsswgs=0.0

Gateside component of temperature dependence of trap-assisted current for junction diode, source side (asymmetrical model).

tnjtss=0.0

Temperature dependence of njtss (area), junction diode, source side (asymmetrical model).

tnjtssws=0.0

Temperature dependence of njtssws (sideways), junction diode, source side (asymmetrical model).

tnjtsswgs=0.0

Temperature dependence of njtsswgs (gateside), junction diode, source side (asymmetrical model).

tcj=0.0

Temperature dependence of area component of capacitance for junction diodes (cjs and cjd), both (source and drain) sides (asymmetrical model).

tcjsw=0.0

Temperature dependence of sideways component of capacitance for junction diodes (cjsws and cjswd), both (source and drain) sides (asymmetrical model).

tcjswg=0.0

Temperature dependence of gateside component of capacitance for junction diodes (cjswgs and cjswgd), both (source and drain) sides (asymmetrical model).

tpb=0.0

Temperature dependence of area parameter of capacitance for junction diodes (pbs and pbd), both (source and drain) sides (asymmetrical model).

tpbsw=0.0

Temperature dependence of sideways parameter of capacitance for junction diodes (pbsws and pbswd), both (source and drain) sides (asymmetrical model).

tpbswg=0.0

Temperature dependence of gateside parameter of capacitance for junction diodes (pbswgs and pbswgd), both (source and drain) sides (asymmetrical model).

njd=1.0

Slope factor for junction diode, drain side (asymmetrical model).

xjbvd=0.0

Break-down effect coefficient for junction diode, drain side (asymmetrical model).

bvd=10.0

Break-down voltage for junction diode, drain side (asymmetrical model).

jsd=0.0E-09

Area component of current for junction diode, drain side (asymmetrical model).

jsswd=0.0E-12

Sideways component of current for junction diode, drain side (asymmetrical model).

jsswgd=0.0E-12

Gate-side component of current for junction diode, drain side (asymmetrical model).

jtsd=0.0E-09

Area component of trap-assisted current for junction diode, drain side (asymmetrical model).

jtsswd=0.0E-12

Sideways component of trap-assisted current for junction diode, drain side (asymmetrical model).

jtsswgd=0.0E-12

Gateside component of trap-assisted current for junction diode, drain side (asymmetrical model).

njtsd=1.0

Area slope factor of trap-assisted current for junction diode, drain side (asymmetrical model).

njtsswd=1.0

Sideways slope factor of trap-assisted current for junction diode, drain side (asymmetrical model).

njtsswgd=1.0

Gateside slope factor of trap-assisted current for junction diode, drain side (asymmetrical model).

vtsd=0.0

Area voltage factor of trap-assisted current for junction diode, drain side (asymmetrical model).

vtsswd=0.0

Sideways voltage factor of trap-assisted current for junction diode, drain side (asymmetrical model).

vtsswgd=0.0

Gateside voltage factor of trap-assisted current for junction diode, drain side (asymmetrical model).

cjd=0.0E-06

Area component of capacitance for junction diode, drain side (asymmetrical model).

cjswd=0.0E-09

Sideways component of capacitance for junction diode, drain side (asymmetrical model).

cjswgd=0.0E-09

Gateside component of capacitance for junction diode, drain side (asymmetrical model).

pbd=0.800

Area parameter of capacitance for junction diode, drain side (asymmetrical model).

pbswd=0.600

Sideways parameter of capacitance for junction diode, drain side (asymmetrical model).

pbswgd=0.600

Gateside parameter of capacitance for junction diode, drain side (asymmetrical model).

mjd=0.900

Area exponent of capacitance for junction diode, drain side (asymmetrical model).

mjswd=0.700

Sideways exponent of capacitance for junction diode, drain side (asymmetrical model).

mjswgd=0.700

Gateside exponent of capacitance for junction diode, drain side (asymmetrical model).

xtid=3.0

Temperature dependence for junction diode, drain side (asymmetrical model).

xtsd=0.0

Area component of temperature dependence of trap-assisted current for junction diode, drain side (asymmetrical model).

xtsswd=0.0

Sideways component of temperature dependence of trap-assisted current for junction diode, drain side (asymmetrical model).

xtsswgd=0.0

Gateside component of temperature dependence of trap-assisted current for junction diode, drain side (asymmetrical model).

tnjtsd=0.0

Temperature dependence of njtss (area), junction diode, drain side (asymmetrical model).

tnjtsswd=0.0

Temperature dependence of njtssws (sideways), junction diode, drain side (asymmetrical model).

tnjtsswgd=0.0

Temperature dependence of njtsswgs (gateside), junction diode, drain side (asymmetrical model).

rgsh=3.0

Gate sheet resistance.

gc=1

Type of gate contacts (gc = 1: single sided, gc = 2: both sides).

krgl1=0.0

Gate resistance length scaling parameter.

rdsbsh=1.0E+3

Substrate network sheet resistance between internal drain and source nodes (used at rf and nqs modes).

rbwsh=3.0E-3

Substrate network bulk resistance per width unit between internal bulk and external bulk nodes (used at rf4, rf and nqs modes).

rbn=0.0

Substrate network bulk resistance per finger between internal bulk and external bulk nodes (used at rf4, rf and nqs modes).

rsbwsh=1.0E-3

Substrate network resistance per width unit between internal source and external bulk nodes (used at rf and nqs modes).

rsbn=0.0

Substrate network resistance per finger between internal source and external bulk nodes (used at rf and nqs modes).

rdbwsh=1.0E-3

Substrate network resistance per width unit between internal drain and external bulk nodes (used at rf and nqs modes).

rdbn=0.0

Substrate network resistance per finger between internal drain and external bulk nodes (used at rf and nqs modes).

ringtype=1.0

Ringtype, shape of bulk connector (ringtype = 1 for horse-shoe, three sides contact, ringtype = 2 for symmetric, two sides contact), (used at rf4, rf and nqs modes).

meff

Effective multiplicity factor (m-factor).

vs (V)

Vs.

vd (V)

Vd.

vg (V)

Vg.

vb (V)

Vb.

vds (V)

Vds.

vgs (V)

Vgs.

vbs (V)

Vbs.

vdb (V)

Vdb.

vgb (V)

Vgb.

beta (A/V²)

Beta.

idsi (A)

Intrinsic current.

idsedge (A)

Edge effect current.

idex (A)

Extrinsic current drain side.

isex (A)

Extrinsic current source side.

igex (A)

Extrinsic current gate side.

ibex (A)

Extrinsic current bulk side.

n

Slope factor n.

vp

Pinch-off voltage.

vod (V)

Overdrive voltage n*(vp-vs).

vdsat (V)

Saturation voltage.

sat (s)

Saturation flag.

vth (V)

Effective threshold voltage vth.

vtb (V)

Effective threshold voltage vtb.

weffnf (m)

Effective total width.

weff (m)

Effective finger width.

leff (m)

Effective length.

op_nf

Number of fingers.

ic

Inversion coefficient.

ispec (A)

Specific current.

gmgi (S)

Intrinsic gate tranconductance.

gmsi (S)

Intrinsic source tranconductance.

gmdi (S)

Intrinsic drain tranconductance.

gmbi (S)

Intrinsic bulk tranconductance.

gmgex (S)

Extrinsic gate tranconductance.

gmsex (S)

Extrinsic source tranconductance.

gmdex (S)

Extrinsic drain tranconductance.

gds (S)

Extrinsic drain tranconductance, alias to Gmdex.

gmbex (S)

Extrinsic bulk tranconductance.

gmgutid

Gmg*ut/ids.

gmsutid

Gms*ut/ids.

gmdutid

Gmd*ut/ids.

gmbutid

Gmb*ut/ids.

avi

Intrinsic gain.

gmgid (1/V)

Gm/ids.

vm (V)

Early voltage ids/gds.

ft (Hz)

Transit frequency.

tau0 (s)

Tau0.

tau (s)

Nqs time constant.

cggi (F)

Cggi.

cgsi (F)

Cgsi.

cgdi (F)

Cgdi.

cgbi (F)

Cgbi.

csgi (F)

Csgi.

csdi (F)

Csdi.

csbi (F)

Csbi.

cssi (F)

Cssi.

cdgi (F)

Cdgi.

cddi (F)

Cddi.

cdbi (F)

Cdbi.

cdsi (F)

Cdsi.

cbgi (F)

Cbgi.

cbdi (F)

Cbdi.

cbbi (F)

Cbbi.

cbsi (F)

Cbsi.

cgsex (F)

Extrinsic gate-source capacitance.

cgdex (F)

Extrinsic gate-drain capacitance.

cgbex (F)

Extrinsic gate-bulk capacitance.

ctotex (F)

Total extrinsic capacitance.

cgsov (F)

Cgsov.

cgdov (F)

Cgdov.

sid_flicker (A²/Hz)

Flicker noise psd sdid @ 1hz.

sid_thermal (A²/Hz)

Thermal noise psd sdid.

svg_flicker (V²/Hz)

Flicker noise psd sdvg @ 1hz.

svg_thermal (V²/Hz)

Thermal noise psd sdvg.

sigmadidoid

Relative current mismatch.

sigmavg (V)

Gate voltage offset.

i0 (V)

Technology current.

qs (C)

Source charge.

qd (C)

Drain charge.

qg (C)

Gate charge.

qb (C)

Bulk charge.

ids (A)

Resistive drain-to-source current.

idb (A)

Impact ionization current.

qsedge (C)

Edge charge.

qdedge (C)

Edge charge.

qgedge (C)

Edge charge.

qbedge (C)

Edge charge.

qsov (C)

Source side overlap charge.

qdov (C)

Drain sie overlap charge.

qsfr (C)

Source side fringing charge.

qdfr (C)

Drain side fringing charge.

igidl (A)

Gate induced drain current.

igisl (A)

Gate induced source current.

igb (A)

Gate current (bulk).

igd (A)

Gate current (drain).

igs (A)

Gate current (source).

igdov (A)

Overlap gate current (drain).

igsov (A)

Overlap gate current (source).

region

Estimated operating region. Spectre a outputs number (0-4) in a rawfile. Possible values are off, triode, sat, subth, and breakdown.

pwr (W)

Power dissipation.