ab=1e-12 m²

Junction area.

ls=1e-06 m

STI-edge part of junction perimeter.

lg=1e-06 m

Gate-edge part of junction perimeter.

mult=1

Number of devices in parallel.

ifactor=1

Multiplier for current.

cfactor=1

Multiplier for depletion capacitance.

trise=0 K

Temperature offset to the ambient temperature.

region=off

Estimated DC operating region, used as a convergence aid. Possible values are off, rev, fwd and brk.

m=1

Multiplicity factor.

area=1.0e-12 for spice; 1 for spectre m²

Alias of ab for SPICE; alias of mult for Spectre.

peri=0.0 m

Alias of ls for SPICE.

pgate=0.0 m

Alias of lg for SPICE.

pj=0.0 m

Alias of peri for SPICE.

level=200

Model level must be 200.

type=n

Type parameter, in output value 1 reflects n-type, -1 reflects p-type. Possible values are n, p, npn, pnp, npnv, pnpv, npnl,  or pnpl.

trj=21 C

Reference temperature.

dta=0 C

Temperature offset with respect to ambient temperature.

imax=1e+03 A

Maximum current up to which forward current behaves exponentially.

cjorbot=0.001 Fm^-2

Zero-bias capacitance per unit-of-area of bottom component.

cjorsti=1e-09 Fm^-1

Zero-bias capacitance per unit-of-length of STI-edge component.

cjorgat=1e-09 Fm^-1

Zero-bias capacitance per unit-of-length of gate-edge component.

vbirbot=1 V

Built-in voltage at the reference temperature of bottom component.

vbirsti=1 V

Built-in voltage at the reference temperature of STI-edge component.

vbirgat=1 V

Built-in voltage at the reference temperature of gate-edge component.

pbot=0.5

Grading coefficient of bottom component.

psti=0.5

Grading coefficient of STI-edge component.

pgat=0.5

Grading coefficient of gate-edge component.

phigbot=1.16 V

Zero-temperature bandgap voltage of bottom component.

phigsti=1.16 V

Zero-temperature bandgap voltage of STI-edge component.

phiggat=1.16 V

Zero-temperature bandgap voltage of gate-edge component.

idsatrbot=1e-12 Am^-2

Saturation current density at the reference temperature of bottom component.

idsatrsti=1e-18 Am^-1

Saturation current density at the reference temperature of STI-edge component.

idsatrgat=1e-18 Am^-1

Saturation current density at the reference temperature of gate-edge component.

csrhbot=100 Am^-3

Shockley-Read-Hall prefactor of bottom component.

csrhsti=0.0001 Am^-2

Shockley-Read-Hall prefactor of STI-edge component.

csrhgat=0.0001 Am^-2

Shockley-Read-Hall prefactor of gate-edge component.

xjunsti=1e-07 m

Junction depth of STI-edge component.

xjungat=1e-07 m

Junction depth of gate-edge component.

ctatbot=100 Am^-3

Trap-assisted tunneling prefactor of bottom component.

ctatsti=0.0001 Am^-2

Trap-assisted tunneling prefactor of STI-edge component.

ctatgat=0.0001 Am^-2

Trap-assisted tunneling prefactor of gate-edge component.

mefftatbot=0.25

Effective mass (in units of m0) for trap-assisted tunneling of bottom component.

mefftatsti=0.25

Effective mass (in units of m0) for trap-assisted tunneling of STI-edge component.

mefftatgat=0.25

Effective mass (in units of m0) for trap-assisted tunneling of gate-edge component.

cbbtbot=1e-12 AV^-3

Band-to-band tunneling prefactor of bottom component.

cbbtsti=1e-18 AV^-3m

Band-to-band tunneling prefactor of STI-edge component.

cbbtgat=1e-18 AV^-3m

Band-to-band tunneling prefactor of gate-edge component.

fbbtrbot=1e+09 Vm^-1

Normalization field at the reference temperature for band-to-band tunneling of bottom component.

fbbtrsti=1e+09 Vm^-1

Normalization field at the reference temperature for band-to-band tunneling of STI-edge component.

fbbtrgat=1e+09 Vm^-1

Normalization field at the reference temperature for band-to-band tunneling of gate-edge component.

stfbbtbot=-0.001 K^-1

Temperature scaling parameter for band-to-band tunneling of bottom component.

stfbbtsti=-0.001 K^-1

Temperature scaling parameter for band-to-band tunneling of STI-edge component.

stfbbtgat=-0.001 K^-1

Temperature scaling parameter for band-to-band tunneling of gate-edge component.

vbrbot=10 V

Breakdown voltage of bottom component.

vbrsti=10 V

Breakdown voltage of STI-edge component.

vbrgat=10 V

Breakdown voltage of gate-edge component.

pbrbot=4 V

Breakdown onset tuning parameter of bottom component.

pbrsti=4 V

Breakdown onset tuning parameter of STI-edge component.

pbrgat=4 V

Breakdown onset tuning parameter of gate-edge component.

swjunexp=0

Flag for JUNCAP-express; 0=full model, 1=express model.

vjunref=2.5

Typical maximum junction voltage; usually about 2*VSUP.

fjunq=0.03

Fraction below which junction capacitance components are considered negligible.

1

vak (V)

Voltage between anode and cathode.

2

cj (F)

Total source junction capacitance.

3

cjbot (F)

Junction capacitance (bottom component).

4

cjgat (F)

Junction capacitance (gate-edge component).

5

cjsti (F)

Junction capacitance (STI-edge component).

6

ij (A)

Total source junction current.

7

ijbot (A)

Junction current (bottom component).

8

ijgat (A)

Junction current (gate-edge component).

9

ijsti (A)

Junction current (STI-edge component).

10

si (A²/Hz)

Total junction current noise spectral density.