Junction Capacitor (juncap)
This is SiMKit 5.2.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /vols/mmsimP4_t1b_006/ws/ling/ling_2110_isr3_mif/spectre_dev/tools.lnx86/cmi/lib/64bit/5.0.doc/libphilips_sh.so.
Instance Syntax
Name a k ModelName parameter=value ...
Instance Parameters
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ab=1e-12 m2
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Diffusion area.
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ls=1e-06 m
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Length of the side-wall of the diffusion area AB which is not under the gate.
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lg=1e-06 m
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Length of the side-wall of the diffusion area AB which is under the gate.
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mult=1
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Number of devices in parallel.
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region=triode
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Estimated DC operating region, used as a convergence aid. Possible values are off, rev, fwd, or brk.
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m=1
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Multiplicity factor.
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area=1.0e-12 m2
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Alias of ab.
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peri=0.0 m
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Alias of ls.
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pgate=0.0 m
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Alias of lg.
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pj=0.0 m
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Aias of peri.
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Model Syntax
model modelName juncap parameter=value ...
Model Parameters
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level=1
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Level of this model.
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dta=0 K
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Temperature offset of the juncap element with respect to TA.
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tr=25 C
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Temperature at which the parameters have been determined.
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vr=0 V
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Voltage at which the parameters have been determined.
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jsgbr=0.001 Am-2
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Bottom saturation-current density due to electron-hole generation at V=VR.
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jsdbr=0.001 Am-2
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Bottom saturation-current density due to diffusion from back contact.
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jsgsr=0.001 Am^-1
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Sidewall saturation-current density due to electron-hole generation at V=VR.
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jsdsr=0.001 Am^-1
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Sidewall saturation-current density due to diffusion from back contact.
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jsggr=0.001 Am^-1
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Gate edge saturation-current density due to diffusion from back contact.
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jsdgr=0.001 Am^-1
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Gate edge saturation-current density due to diffusion from back contact.
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nb=1
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Emission coefficient of the bottom forward current.
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ns=1
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Emission coefficient of the sidewall forward current.
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ng=1
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Emission coefficient of the gate edge forward current.
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vb=0.9 V
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Reverse breakdown voltage.
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cjbr=1e-12 Fm-2
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Bottom junction capacitance at V=VR.
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cjsr=1e-12 Fm^-1
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Sidewall junction capacitance at V=VR.
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cjgr=1e-12 Fm^-1
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Gate edge junction capacitance at V=VR.
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vdbr=1 V
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Diffusion voltage of the bottom junction at T=TR.
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vdsr=1 V
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Diffusion voltage of the sidewall junction at T=TR.
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vdgr=1 V
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Diffusion voltage of the gate edge junction at T=TR.
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pb=0.4
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Bottom junction grading coefficient.
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ps=0.4
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Sidewall junction grading coefficient.
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pg=0.4
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Gate edge junction grading coefficient.
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imax=1e+03 A
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Explosion current.
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shrink=0
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Linear shrink factor.
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shrink2=0
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Areal shrink factor.
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type=n
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Transistor gender. Possible values are n, p, npn, pnp, npnv, pnpv, npnl, or pnpl.
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tnom (C)
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Alias of tnom.
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tref (C)
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Alias of tnom.
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Output Parameters
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dta (K)
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Temperature offset of the juncap element with respect to TA.
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tr (C)
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Temperature at which the parameters have been determined.
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vr (V)
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Voltage at which the parameters have been determined.
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isgb (Am-2)
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Bottom saturation-current density due to electron-hole generation at V=VR.
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isdb (Am-2)
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Bottom saturation-current density due to diffusion from back contact.
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isgs (Am^-1)
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Sidewall saturation-current density due to electron-hole generation at V=VR.
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isds (Am^-1)
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Sidewall saturation-current density due to diffusion from back contact.
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isgg (Am^-1)
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Gate edge saturation-current density due to electron-hole generation at V=VR.
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isdg (Am^-1)
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Gate edge saturation-current density due to diffusion from back contact.
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nb
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Emission coefficient of the bottom forward current.
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ns
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Emission coefficient of the sidewall forward current.
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ng
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Emission coefficient of the gate edge forward current.
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cjb (Fm-2)
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Bottom junction capacitance at V=VR.
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cjs (Fm^-1)
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Sidewall junction capacitance at V=VR.
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cjg (Fm^-1)
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Gate edge junction capacitance at V=VR.
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vdb (V)
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Diffusion voltage of the bottom junction at T=TR.
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vds (V)
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Diffusion voltage of the sidewall junction at T=TR.
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vdg (V)
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Diffusion voltage of the gate edge junction at T=TR.
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pb
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Bottom junction grading coefficient.
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ps
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Sidewall junction grading coefficient.
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imax (A)
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Explosion current.
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vexpl (A)
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Explosion voltage.
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pg
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Gate edge junction grading coefficient.
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Operating-Point Parameters
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g (S)
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Total differential conductance.
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c (F)
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Total capacitance.
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lx1 (A)
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Total current.
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lx3 (Coul)
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Total charge.
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lx5 (F)
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Total capacitance, identical to OP output c.
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ctotal (F)
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Total capacitance, identical to OP output c.
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vdio (V)
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Voltage across junction.
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pwr (W)
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Power for juncap.
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diode_region
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DIODE region. Possible values are off and on.
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Related Topics
Fractional Impedance/Admittance Pole (fracpole)
Two-Terminal Capacitor (capacitor)
Two Terminal Capacitor with the specified Q factor (capq)
JUNCAP2 Model (juncap200)
Junction Capacitor (juncap_eldo)
Passive Components
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