Version Update and Enhancement

Version 3.2.1 Enhancement

• Implemented clamp of forward back bias for vertically non-uniform doping (VNUD)effects model. This bug fix ensures protection against a negative input to sqrt().
• Added a new model parameter "VBSRFAR", allowing users to set the maximum reverse back bias value (that is, the farthest from zero).
• Extended the implementation of the VNUD model to include retrograde cases where NSUBD > NSUBC.
• The temperature dependence of is now implemented in submodels, such as Vth shift associated with short-channel effects, reverse-short-channel effects, and GID(S)L. In these submodels, now takes into account the temperature other than 300K.
• The model flag COPB20COMPAT switches :
  • The recommended setting is COPB20COMPAT=0, which uses the temperature-dependent .
  • However, for backward compatibility, the user can set COPB20COMPAT=1 to use at a temperature T=300K.

Version 3.1.1 Enhancement

Bug fix for backward compatibility in * Qbd_swg and Qbs_swg when CODIO=0.

Version 3.1.0 Enhancement

• Improvements in the depletion mode model
  • Added model flag for selection of Vds,sat treatment:
    + COVDSRES = 3 : ln(1+ exp) function(default)
= -1 : Vds
• Added model parameters for Vertical-Doping-Inhomogeneity model. This model accounts for vertical-doping inhomogeneity as a shift of threshold voltage from the uniform doping case.
• Added model flag for selection model in deep punchthrough model. This model gives better capability of subthreshold slope.
• Updated oxide thickness in the overlap region:
  + TOXOV = 3.0e-9
+ OVINVDLT = 75.0
• Improvement in lateral diffusion of the S/D under the gate for better capacitance fitting:
  + XLDC = 0
+ XWDC = 0
• Added selector to include improved diode model:
  + CODIO = 0 (default)
= 1 (improved)
• Bug fixed on the induced gate noise for Flip_N and Flip_P tests.

Version 3.0.0 Enhancement

• Depletion mode model (CODEP=3) is implemented with improvements on the capacitance characteristics.

Version 2.91 Enhancement

Following bugs were fixed:

• RD/RS calculations in reverse mode.
• Negative Cdd/Css issue in CODEP=2. This fix causes non-backward compatibility, therefore, a flag COFIXCSS has been introduced to fix the issue.
  • COFIXCSS=1 fixes the negative capacitance. Code is non-backward compatible.
  • COFIXCSS=0 has negative capacitance. Code is backward compatible. (Default)

Version 2.90 Enhancement

• Improvement of the depletion mode model with CODEP=2, where CODEP=1 refers to the version 2.8.0 model.
• Addition of a model parameter for the junction leakage current at the gate-edge sidewall.
• Improvement in the temperature dependence of Isub.
• Improvement in the ranges in parameter declaration.
• Addition of range checking for model parameter values and binning after calculation of Lgate and Wgate.
• Cleaning of source code.
• Bugs fixes:
  • Discontinuity in the derivative of Isub in CODEP=1.
  • Non-convergence when CODEP=1 and COIIGS=1.
  • Removal of uninitialized variable problem.
  • Removal of hidden state problem.

Version 2.80 Enhancement

• New depletion mode MOSFET model introduced. It is activated with the flag CODEP=1.
  
  Currently, STI leakage, channel length modulation, thermal noise and induced gate noise are not supported in this depletion mode model.
• Improved Vds,eff calculation with new model flag CODDLT=1.
• Range changed for parameters RSH, QME2, QME3, and VFBC.
• Default values of parameters QME2, DDLTICT and DDLTSLP VFBC , NSUBC , LP , NSUBP and MUESR1 changed when CODEP=1
• Bugs fixes:
  • Thermal noise when CORSRD>0 is fixed
  • Model for substrate current Isub
  • Floating point exception in the Fn_Pow function
  • Vbs dependence of the printed output for Vth

Version 2.70 Enhancement

• Unit conversion from CGS to MKS
• Change in model descriptions
  • Suppression of error messages from the range check when new the model flag COERRREP is set to 0
  • Improvement of GIDL current model with new model parameters GIDL6 and GIDL7
  • Improvement of STI effect model with new model parameters NSUBCSTI1, NSUBCSTI2, and NSUBCSTI3
  • Introduction of gate length dependence for VFBC with new model parameters VFBCL and VFBCLP
  • Improvement of smoothness of the NSUBPFAC model with the new model parameter NSUBPDLT
  • Invalidation of the NSUBPFAC model when NSUBPFAC = 1
  • Range check of model parameters NSUBPFAC and NSUBPDLT
• Bug fixes:
  • Calculation of MUEPH1 when CODFM=1
  • Resetting of SC4 value when CORECIP=1
  • Calculation of some derivatives
  • Floating point exception in the smoothing functions
  • High-field effect model with model parameter GDLD
  • Code improvements of Fn_POW and Fn_SZ functions for higher exception robustness

Version 2.61 Enhancement

• Missing initialization of NSUBC, NSUBP, and MUEPH1 in the Initialize for repeating simulation
• Unit converting in the Initialize
• Derivative calculations in the Qover model code
• Floating point exception in the QME model code
• Floating point exception in the smoothing functions

Version 2.60 Enhancement

• Introduction of the Well Proximity Effect model with new parameters:
  • Instance parameters: SCA , SCB, and SCC
  • Model parameters: WEB , WEC , NSUBCWPE , NSUBPWPE, and NPEXTWPE
• Improvement of the overlap capacitance model
• Activation of Induced Gate Noise model
• Change the default value of the instance parameters NRD and NRS.