Reference

Model Equations

Some important model equations are listed as following for your reference:

Charge

All device characteristics are determined on the basis of the charge controlled by applied voltages and by expressing the MOSFET charges as functions of the surface potentials. Under the charge-sheet approximation the charges on the four MOSFET terminals Q_G(gate), Q_B(bulk), Q_D(drain), and Q_S(source), are described for the symmetrical the source/drain contacts as:

where Q_B and Q_I are the depletion charge and the inversion charge, respectively, and y is the position along the channel. Leff and 0 are the channel-end positions at the drain side and the source side, respectively.

Drain Current

The drift-diffusion theory describes the drain current I_ds as:

where n(y) is the carrier density calculated from the relationship

Under the gradual-channel approximation with further approximations of an idealized gate structure and uniform channel doping, the final equation for I_ds is written:

Threshold Voltage Shift

Different from the conventional bsim model, all HiSIM_HV can be determined by oxide thickness Tox and the substrate doping concentration NSUBC. The measured V_th is influenced by various phenomena such as the short-channel effects, which cause a reduction of V_th for short-channel transistors in comparison to long-channel transistors as shown in Figure 31-5. This so-called V_th roll-off is dependent on the technology applied for MOSFET fabrication. Therefore, HiSIM can derive many detailed information on the MOSFET fabrication technology, which are relevant for modeling device characteristics, from the V_th changes ( V_th) as a function of gate length (L_gate). The modeled V_th is incorporated in the S iteration can be viewed as consisting of two main effects or components:

(I) the short-channel effect: V_{th, SC}

(II) the reverse-short-channel effect: V_{th, R} and V_{th, P}

The separation into these two components ( V_th = V_{th, SC} + V_{th, R} (or V_{th, P})) is schematically shown in Figure 31-5.

Figure -5 Schematic plot of the separation of Vth into the contributions of the short-channel and the reverse short-channel effect.

Mobility Model

The low-field mobility is described with the following expressions and includes the three independent mechanisms of Coulomb, phonon and surface-roughness scattering:

Channel-Length Modulation

As the gradual-channel approximation is not valid for large V_ds causing the pinch-off phenomenon in the channel. Without taking into account the pinch-off phenomenon, the calculated channel conductance gds enters abruptly into the saturation condition. To include the pinch-off phenomenon in HiSIM, we apply the conventional method of modeling the pinch-off region ( L) separately from the rest of the channel as depicted in Figure 31-6:

Figure -6 Schematic showing the correlation among physical quantities in the pinch-off region.

After taking into all effects, the final L is derived as:

Narrow-Channel Effects

The shallow-trench-isolation (STI) technology induces a V_th reduction for reduced channel width (W_gate). This phenomenon is modeled under inclusion of the edge-fringing capacitances C_ef at the edge of the trench as:

So the total threshold shift becomes:

In addition, the mobility should be adjusted with small geometrical size. The shallow trench isolation induces also an undesired hump in the sub-threshold region of the I_ds-V_gs characteristics.

Temperature Dependences

The temperature dependence is included automatically in the surface potentials through , which is the inverse of the thermal voltage. Additionally the band gap, the intrinsic carrier concentration, the carrier mobility, and the carrier saturation velocity are also temperature dependent.

Resistances

Junction Capacitance at Drain side

Junction Current

Resistance

For the symmetrical/asymmetrical HVMOS case, the resistance at the source side is modeled with the same equations for the drain side without the V_ds dependence. The source and the drain resistances R_s and R_d are considered by voltage drops on each terminal as

for the DC condition, where the effective voltages are referred as internal node potentials. The resistance values are modeled as

Different resistance effects modeling approaches are supplies by HiSIM_HV model, it can be treated as external resistance or the total current can be obtained by a simple analytical description. Flag CORSRD is provided for the selection of one of the possible approaches. In the HiSIM HV 1.1.1 version the resistances is treated only as the extrinsic resistances.

CORSRD=2 is originally introduced to avoid simulation time penalty with an analytical description of the resistance effect as

where I_ds0 is the drain current without the resistance effect and

The selection of the resistance model is summarized here:

CORSRD = 0 : no resistance

CORSRD = 1 : solved by circuit simulator with internal nodes

Model parameters are:

RS, NRS, RSH

RDVG11, RDVG12, RDVB, RDS, RDSP, NRD

RD, RDVD, RDVDL, RDVDLP, RDVDS, RDVDSP

RDSLP1, RDICT1, RDSLP2, RDICT2, RDOV11, RDOV12, RDOV13

CORSRD = 2 : solved with the analytical approach

Model parameters are:

RD21, RD22, RD22D, RD23, RD23L, RD23LP

RD23S, RD23SP, RD24, RD25, RD20

CORSRD = 3 : Both CORSRD = 1 and CORSRD = 2 are considered.

	Structure	Source	Drain
COSYM=0	LDMOS	RS (bias independent)	RD
COSYM=1	Symmetrical HVMOS		RD
COSYM=1	Asymmetrical HVMOS	RS	RD

Capacitance

Intrinsic Capacitance

The intrinsic capacitances are derivatives of the node charges determined as

Overlap Capacitance

Three different overlap capacitance models are supplied to modeling the overlap capacitance: Constant model, Simplified model and Surface-potential-based model. Flag COOVLP ( COOVLPS ) and NOVER ( NOVERS ) are used to select the corresponding model.

Figure -7 Model options of the overlap capacitance at the drain side are summarized.

Figure -8 Model options of the overlap capacitance at the source side are summarized.

Leakage Currents

Substrate Current

The substrate current Isub is generated by impact ionization in the depletion region at the drain junction

where C1 and C2 are fitting parameters.

Gate Current

All possible gate leakage currents are schematically shown in Fig. 32.8

Between Gate and Channel, I_gate

Between Gate and Bulk, I_gb

The I_gb current under the accumulation condition is modeled as

The Fowler-Nordheim tunneling mechanism is also considered

Total substrate current is the sum of the two components as

Between Gate and Source/Drain, Igs/Igd

GIDL (Gate-Induced Drain Leakage)

Source/Bulk and Drain/Bulk Diode Models

Diode Current

Between Drain and Bulk

Between Source and Bulk

Noise Models

1/f Noise Models

The 1/f noise is caused by both the carrier fluctuation and the mobility fluctuation. The final description for the drift-diffusion model is

where the parameters NFALP and NFTRP represent the contribution of the mobility fluctuation and the ratio of trap density to attenuation coefficient, respectively.

Thermal Noise Model

Van der Ziel derived the equation for the spectral density of the thermal drain-noise current at temperature T by integrating the trans-conductance along the channel direction y based on the Nyquist theorem

where ?_s, ?_d and ?_av are mobilities at the source side, the drain side, and averaged, respectively.

Induced Gate Noise Model

Coupling Noise Model

Non-Quasi-Static (NQS) Model

Formation of carrier

Carriers in the channel take time to build-up as opposed to the Quasi-Static (QS) approximation. To consider this phenomenon in HiSIM, the carrier formation is modeled as

where q(t_i) and Q(t_i) represent the non-quasi-static and the quasi-static carrier density at time ti, respectively, and t = t_i – t_i-1 is valid. Above equation implies that the formation of carriers under the NQS approximation is always delayed in comparison to the QS approximation, which is the basic origin of the NQS effect.

Delay Mechanisms

Weak inversion

Strong inversion

These two delay mechanisms (diffusion and conduction) are combined using the Matthiessen rule:

Applying the same approach for the formation of bulk carriers, leads to the approximation of the bulk carrier delay as an RC delay in the form

NQS model implementation into circuit simulator is listed as following figure:

Self-Heating Effect Model

The self-heating effect is modeled with the thermal network shown in the following figure. The flag COSELFHEAT must be equal to one and RTH0 must not be equal to zero to activate the model.

The total temperature of the devices is the sum of the original temperature and the temperature rise due to self-heating.

where R_th as well as C_th are a function of W_eff as

HiSIM HV 1.1.1 models the thermal dissipation in a different way with that of previous version as:

where POWRAT is a model parameter. The external node potential is represented by V_ds and the internal node potential within the drift region at the channel/drift junction is by V_dsi, which is calculated during the simulation.

DFM Model

To support design for manufacturability (DFM) HiSIM introduces an option for considering the variation of device parameters.

Component Statements

Instance Parameters

1	`w (m)`	Gate width.
2	`l (m)`	Gate length.
3	`as (m`²`)`	Area of source junction.
4	`ad (m`²`)`	Area of drain junction.
5	`ps (m)`	Perimeter of source junction.
6	`pd (m)`	Perimeter of drain junction.
7	`dtemp (C)`	Device temperature rise from ambient.
8	`trise (C)`	Temperature rise from ambient.
9	`nrs=1`	Number of squares of source diffusion.
10	`nrd=1`	Number of squares of drain diffusion.
11	`corbnet=0`	Substrate resistance network selector.
12	`rbpb (`Ω`)`	Substrate resistance network.
13	`rbpd (`Ω`)`	Substrate resistance network.
14	`rbps (`Ω`)`	Substrate resistance network.
15	`cosubnode=0`	Instance flag to switch tempnode to subnode. 1: 5th node is subnode; 0: 5th node is thermal node.
16	`coselfheat=0`	Calculation of self-heating model.
17	`corg=0`	Gate-contact resistance selector.
18	`ngcon=1.0`	Number of gate contacts.
19	`xgw=0.0 m`	Distance from gate contact to channel edge.
20	`xgl=0.0 m`	Offset of gate length due to variation in patterning.
21	`nf=1.0`	Number of gate fingers.
22	`lod=1.0e-5 m`	Length of diffusion between gate and STI.
23	`m=1`	Multiplicity factor (number of MOSFETs in parallel).
24	`subld1`	Parameter for impact-ionization current in the drift region.
25	`subld2 ((V^(3/2))/m)`
		Parameter for impact-ionization current in the drift region.
26	`ldrift1 (m)`	Parameter for drift region length-1.
27	`ldrift2 (m)`	Parameter for drift region length-2.
28	`lover (m)`	Overlap length on source side.
29	`lovers (m)`	Overlap length on source side.
30	`loverld (m)`	Overlap length on drain side.
31	`ldrift1s (m)`	Parameter for drift region length-1 on source side.
32	`ldrift2s (m)`	Parameter for drift region length-2 on source side.
33	`sa=0.0 m`	Distance from STI edge to Gate edge.
34	`sb=0.0 m`	Distance from STI edge to Gate edge.
35	`sd=0.0 m`	Distance from Gate edge to Gate edge.
36	`nsubcdfm (cm`^-3`)`	Constant part of Nsub for DFM.
37	`isnoisy=yes`	Should device generate noise. Possible values are `yes` and `no`.
38	`region=triode`	Estimated operating region. Possible values are `off`, `triode`, `sat`, `subth`, and `breakdown`.

Model Definition

model modelName hisim_hv parameter=value ...

Model Parameters

Device type parameters

1	`type=n`	Transistor type. Possible values are `n` and `p`.
2	`level=73`	Level selector for spice compatible. 73 is valid level for hisim_hv model. The parameter cannot be parameterized, its value must be constant.
3	`version=2.10`	Model parameter "version" only accepts real number value, such as 1.12 for version=1.1.2. The available versions are 1.11(1.1.1)/1.12(1.1.2), 1.20(1.2.0)/1.21(1.2.1)/1.22(1.2.2)/1.23(1.2.3)/1.24(1.2.4), 2.00(2.0.0)/2.01(2.0.1)/2.10(2.1.0)/2.20(2.2.0)/2.30(2.3.0)/2.31(2.3.1)/2.32(2.3.2)/2.33(2.3.3)/2.40(2.4.0)/2.41(2.4.1)/2.50(2.5.0). Version 2.50 is the latest version of HiSIM_HV, and 2.10 is the default version. Version 1.1.1/1.1.2 are no longer maintained. You need to set the value of the 'enable_pre_ver' parameter to 'yes' in the 'options' statement to enable the old versions. The parameter cannot be parameterized, its value must be constant.
4	`corsrd=3`	Contact resistances Rs and Rd selector. 0: no and 1: yes as external resistances. 2: yes, as analytical resistances. 3: yes, as external and analytical resistance.
5	`coiprv=1`	Previous Ids is used for calculating source/drain resistance effect. Possible values are 0: no (default) and 1: yes.
6	`copprv=0`	Previous surface potential is used for the initial guess. Possible values are `0: no` and `1: yes`. The default value is `1` for version < 2.3. For other versions, this feature is not supported and it will be always `0: no`.
7	`coadov=1`	Selector for lateral field induced and overlap charges/capacitances being added to intrinsic ones. Possible values are 0: no and 1: yes (default).
8	`coisub=0`	Substrate current selector. Possible values are 0: no (default) and 1: yes.
9	`cogidl=0`	GIDL current calculation selector. Possible values are 0: no (default) and 1: yes.
10	`coiigs=0`	Gate current calculation selector. Possible values are 0: no (default). 1: yes.
11	`coovlp=1`	Overlap capacitance calculation selector on drain side. Possible values are 0: constant overlap capacitance and 1: including the bias dependent overlap capacitances (default).
12	`coovlps=0`	Overlap capacitance calculation selector on source side. Possible values are 0: constant overlap capacitance (default) and 1: including the bias dependent overlap capacitances.
13	`coflick=0`	1/f noise calculation selector.
14	`coisti=0`	STI leakage current calculation selector. Possible values are 0: no (default) and 1: yes.
15	`conqs=0`	Non-quasi-static mode selector. Possible values are 0: no (default) and 1: yes.
16	`cothrml=0`	Thermal noise calculation selector. Possible values are 0: no (default) and 1: yes.
17	`info`	Debug information flag.
18	`tnom (C)`	Parameters measurement temperature. The default value is set by `options`.
19	`corg=0`	Gate-contact resistance calculation selector. Possible values are 0: no (default) and 1: yes.
20	`corbnet=0`	Substrate resistance network selector.
21	`coign=0`	Induced gate and cross correlation noise calculation selector.
22	`compatible`	Compatible with spice3, default is spectre compatible. Possible values are `spectre`, `spice2`, `spice3`, `cdsspice`, `spiceplus`, `eldo`, and `sspice`.
23	`alarm=none`	Forbidden operating region. Possible values are `none`, `off`, `triode`, `sat`, `subth`, and `rev`.
24	`codfm=0`	Calculation of model for DFM selector.
25	`coselfheat=0`	Calculation of self heating model.
26	`cosubnode=0`	Flag to switch tempnode to subnode. Possible values are 1: 5th node is subnode and 0: 5th node is thermal node.
27	`cosym=0`	Model selector for symmetry device.
28	`coqovsm=1`	Selector for smoothing method of Qover. Possible values are 0: analytically solved without inversion condition; 1: iteratively solved (default); 2: analytically solved with inversion condition (Old model).
29	`cotemp=0`	Model flag for temperature dependence.
30	`coldrift=0`	Selector for Ldrift parameter.
31	`cordrift=1`	Flag for rdrift evaluation.

Default for instance parameters

32	`w=5e-6 m`	Default gate width.
33	`l=2e-6 m`	Default gate length.
34	`as=0 m`²	Default area of source junction.
35	`ad=0 m`²	Default area of drain junction.
36	`ps=0 m`	Default perimeter of source junction.
37	`pd=0 m`	Default perimeter of drain junction.
38	`temp=27 C`	Default device temperature.
39	`dtemp=0 C`	Default device temperature rise from ambient.
40	`trise (C)`	Alias of dtemp.

Basic Device Parameters

41	`tox=3e-8 m`	Physical oxide thickness. The default value is 7e-9 since version 2.00.
42	`xld=3e-8 m`	Gate-overlap length. The default value is 0 for version 2.00/2.01 and 1.23.
43	`xwd=0 m`	Gate-overlap width.
44	`xwdc=0.0 m`	Gate-overlap width, for capacitance.
45	`tpoly=2.0e-7 m`	Height of the gate poly-si for fringing capacitance on source side.
46	`nsubc=1.0e17 cm`^-3
		Substrate-impurity concentration. The default value is 5.0e17 for version 1.23 and 3.0e17 for version 2.00/2.01.
47	`nsubp=1.0e17 cm`^-3
		Maximum pocket concentration. The default value is 1.0e18 for version 2.00/2.01 and version 1.23.
48	`rs=0.0` Ω `m`	Source contact resistance in LDD region.
49	`rd=5.0e-3` Ω `m`	Drain contact resistance in LDD region. The default value is 0.0 since version 2.00.
50	`vfbc=-1.0 V`	Constant part of flat-band voltage.
51	`lp=0.0 m`	Length of the pocket penetration into the channel. The default value is 1.5e-8 since version 2.00.
52	`xqy=0.0 m`	Distance from channel/drain junction to maximum electric field point.
53	`lover=3.0e-8 m`	Overlap length on source side.
54	`ll=0.0`	Gate length parameter.
55	`lld=0.0 m`	Gate length parameter.
56	`lln=0.0`	Gate length parameter.
57	`wl=0.0`	Gate width parameter.
58	`wld=0.0 m`	Gate width parameter.
59	`wln=0.0`	Gate width parameter.
60	`vbi=1.1 V`	Built-in potential.
61	`nsubp0=0.0 cm`^-3	Pocket implant parameter.
62	`nsubwp=1.0`	Pocket implant parameter.
63	`lpext=1.0E-50 m`	Pocket extension.
64	`npext=1.0e17 cm`^-3
		Pocket extension. The default value is 5.0e17 starting with version 2.00.
65	`rsh=0.0 V/A m`	Source/drain diffusion sheet resistance.
66	`rshg=0.0 V/A m`	Gate-electrode sheet resistance.
67	`rbpb=50.0` Ω	Substrate resistance network.
68	`rbpd=50.0` Ω	Substrate resistance network.
69	`rbps=50.0` Ω	Substrate resistance network.
70	`gbmin=1.0e-12`	Minimum conductance for substrate resistance network.
71	`xl=0 m`	Gate length offset due to mask/etch effect.
72	`xw=0 m`	Gate width offset due to mask/etch effect.
73	`xqy1=0.0 F m^{XQY2}`
		Vbs dependence of Qy.
74	`xqy2=0.0`	Lgate dependence of Qy. The default value is 2.0 since version 2.00.
75	`xldld=1.0e-6 m`	Lateral diffusion of Drain under the gate.
76	`xwdld=1.0e-6 m`	Widening of drift width.
77	`rdov11=0.0`	Dependence coefficient for overlap length.
78	`rdov12=1.0`	Dependence coefficient for overlap length.
79	`rdov13=1.0`	Dependence coefficient for overlap length.
80	`rdslp1=0.0`	LDRIFT1 dependence of resistance for CORSRD=1,3. Default value changed to 1.0 for version 1.22 and later.
81	`rdict1=1.0`	LDRIFT1 dependence of resistance for CORSRD=1,3.
82	`rdslp2=1.0`	LDRIFT2 dependence of resistance for CORSRD=1,3.
83	`rdict2=0.0`	LDRIFT2 dependence of resistance for CORSRD=1,3.
84	`loverld=1.0e-6 m`	Overlap length on the drain side.
85	`lovers=3.0e-8 m`	Overlap length on source side.
86	`ldrift1=1.0e-6 m`	Drift region length-1 on the drain side.
87	`ldrift1s=0.0 m`	Drift region length-1 on the source side.
88	`ldrift2=1.0e-6 m`	Drift region length-2 on the drain side.
89	`ldrift2s=1.0e-6 m`
		Drift region length-2 on the source side.
90	`subld1=0.0`	Impact-ionization current in the drift region.
91	`subld1l=0.0` μ`m^subld1lp`
		Parameter for impact-ionization current in the drift region.
92	`subld1lp=1.0`	Parameter for impact-ionization current in the drift region.
93	`subld2=0.0 (V^(3/2))/m`
		Impact-ionization current in the drift region.
94	`xpdv=0.0 1/m`	Parameter for impact-ionization current in the drift region.
95	`xpvdth=20.0 V`	Parameter for impact-ionization current in the drift region.
96	`xpvdthg (1/V)`	Parameter for impact-ionization current in the drift region.
97	`qovadd=0.0`	Parameter for additional Qover Charge.
98	`rdrbb=1.0`	Degradation of the mobility in drift region.
99	`rdrbbtmp=0 1/K`	Temperature coefficient of RDRBB.

Temperature dependence effects

100	`eg0=1.1785 eV`	Constant bandgap.
101	`bgtmp1=9.025e-5 eV/K`
		First order temperature coefficient for band gap.
102	`bgtmp2=1.0e-7 eV/K`²
		Second order temperature coefficient for band gap.
103	`igtemp2=0.0 1/K`	Temperature dependence of gate current.
104	`igtemp3=0.0 1/K`²	Temperature dependence of gate current.
105	`vmaxt1=0.0 1/K`	Temperature dependence of velocity.
106	`vmaxt2=0.0 1/K`²	Temperature dependence of velocity.
107	`ninvdt1=0.0 1/K`	Temperature dependence of universal mobility model.
108	`ninvdt2=0.0 1/K`²	Temperature dependence of universal mobility model.
109	`rdtemp1=0.0 1/K`	Temperature-dependence of Rd.
110	`rdtemp2=0.0 1/K`²	Temperature-dependence of Rd.
111	`rdvdtemp1=0.0 1/K`	Temperature-dependence of RDVD.
112	`rdvdtemp2=0.0 1/K`²
		Temperature-dependence of RDVD.
113	`rthtemp1=0.0 1/K`	Temperature dependence of thermal resistance.
114	`rthtemp2=0.0 1/K`²
		Temperature dependence of thermal resistance.
115	`prattemp1=0.0 1/K`	Temperature dependence of thermal dissipation.
116	`prattemp2=0.0 1/K`²	Temperature dependence of thermal dissipation.

Quantum Mechanical Effects

117	`qme1=0.0 m/V`²	Coefficient for quantum mechanical effect.
118	`qme2=1.0 V`	Coefficient for quantum mechanical effect. Default as 0.0 for version 1.23, 2.0 for version 2.10.
119	`qme3=0.0 m`	Coefficient for quantum mechanical effect.
120	`kappa=3.9`	Dielectric constant for high-k stacked gate.

Poly Depletion Effects

121	`pgd1=0.0 V`	Strength of poly depletion.
122	`pgd2=1.0 V`	Threshold voltage of poly depletion.
123	`pgd3=0.8`	Vds dependence of poly depletion.
124	`pgd4=0.0`	Parameter for gate-poly depletion.

Short Channel Effects

125	`parl2=1.0e-8 m`	Depletion width of channel/contact junction.
126	`sc1=1.0 1/V`	Short-channel coefficient 1, defaulted as 0 since version 2.10.
127	`sc2=1.0 1/V`²	Short-channel coefficient 2. The default value is 0.0 for version 2.00/2.01 and version 1.23.
128	`sc3=0.0 m/V`²	Short-channel coefficient 3.
129	`sc4=0.0 1/V`	Parameter for SCE.
130	`scp1=1.0 1/V`	Short-channel coefficient 1 for pocket, defaulted as 0.0 since version 2.10.
131	`scp2=0.1 1/V`²	Short-channel coefficient 2 for pocket. The default value is 0.0 for version 2.00/2.01 and version 1.23.
132	`scp3=0.0 m/V`²	Short-channel coefficient 3 for pocket.
133	`scp22=0.0 V`⁴	Short-channel-effect modification for small Vds.
134	`scp21=0.0 V`	Short-channel-effect modification for small Vds.
135	`bs1=0.0 V`²	Body-coefficient modification by impurity profile.
136	`bs2=0.9 V`	Body-coefficient modification by impurity profile.

Narrow channel effects

137	`wfc=0.0 m F/cm`²	Threshold voltage reduction.
138	`nsubcw=0.0`	Width dependence of substrate-impurity concentration.
139	`nsubcwp=1.0`	Width dependence of substrate-impurity concentration.
140	`nsti=1.0e17 cm`^-3	Substrate-impurity concentration at the SIT edge, defaulted as 5e17 since version 2.10.
141	`wsti=0.0 m`	Width of the high-field region at STI.
142	`muephw=0.0`	Phonon scattering parameter.
143	`muepwp=1.0`	Phonon scattering parameter.
144	`wvth0=0.0`	Threshold voltage shift.
145	`mueswp=1.0`	Change of surface roughness related mobility.
146	`vthsti=0.0`	Parameter for STI.
147	`muesti1=0.0`	STI Stress mobility parameter.
148	`muesti2=0.0`	STI Stress mobility parameter.
149	`muesti3=1.0`	STI Stress mobility parameter.
150	`nsubpsti1=0.0 m`	STI Stress pocket implant parameter.
151	`nsubpsti2=0.0 m`	STI Stress pocket implant parameter.
152	`nsubpsti3=1.0 m`	STI Stress pocket implant parameter.
153	`wstil=0.0`	Parameter for STI.
154	`wstilp=1.0`	Parameter for STI.
155	`scsti1=0.0`	Parameter for STI.
156	`scsti2=0.0 1/V`	Parameter for STI.
157	`saref=1e-6 m`	Reference distance from STI edge to Gate edge.
158	`sbref=1e-6 m`	Reference distance from STI edge to Gate edge.
159	`wstiw=0.0`	Parameter for STI.
160	`wstiwp=1.0`	Parameter for STI.
161	`vdsti=0.0`	Parameter for STI.

Mobility Effects

162	`muecb0=1.0e3 cm`²`/(V s)`
		Coulomb scattering.
163	`muecb1=1.0e2 cm`²`/(V s)`
		Coulomb scattering.
164	`mueph0=0.3 cm`² `(V/cm)^(Muesr1)/(V s)`
		Phonon scattering.
165	`mueph1=2.5e4`	Phonon scattering. The default value is 2.0e4 since version 2.00.
166	`muetmp=1.7`	Temperature dependence of phonon scattering. The default value is 1.5 for version 2.00/2.01 and version 1.23.
167	`muesr0=2.0 cm`² `(V/cm)^(Muesr1)/(V s)`
		Surface-roughness scattering.
168	`muesr1=1.0e16`	Surface-roughness scattering. The default value is 6.0e14 since version 2.00.
169	`ndep=1.0`	Coefficient of effective electric field.
170	`ninv=0.5`	Coefficient of effective electric field.
171	`ninvd=0.0 1/V`	Modification of Vdse dependence on Eeff.
172	`ninvdw=0.0`	Coefficient of modification of Vdse dependence on Eeff.
173	`ninvdwp=1.0`	Coefficient of modification of Vdse dependence on Eeff.
174	`bb=2.0`	High-field mobility degradation.
175	`vmax=1.0e7 cm/s`	Saturation velocity.
176	`vover=0.3 cm^(voverp)`
		Parameter for velocity overshoot.
177	`voverp=0.3`	Lgate dependence of velocity overshoot.
178	`vovers=0.0`	Parameter for overshoot.
179	`voversp=0.0`	Parameter for overshoot.
180	`vtmp=0.0 cm/s`	Temperature dependence of the saturation velocity.
181	`muephl=0.0`	Phonon scattering parameter.
182	`mueplp=1.0`	Phonon scattering parameter.
183	`muesrl=0.0`	Surface roughness parameter.
184	`muesrw=0.0`	Change of surface roughness related mobility.
185	`mueslp=1.0`	Surface roughness parameter.
186	`ndepl=0.0`	Modification of Qb contribution for short-channel case.
187	`ndeplp=1.0`	Modification of Qb contribution for short-channel case.

Small size parameters

188	`wl1=0.0`	Threshold voltage shift of STI leakage due to small size effect.
189	`wl1p=1.0`	Threshold voltage shift of STI leakage due to small size effect.
190	`wl2=0.0`	Threshold voltage shift due to small size effect.
191	`wl2p=1.0`	Threshold voltage shift due to small size effect.
192	`muephs=0.0`	Mobility modification due to small size.
193	`muepsp=1.0`	Mobility modification due to small size.

Channel Length Modulation Effects

194	`clm1=50e-3`	First parameter for CLM. Default as 0.7 for version 1.23.
195	`clm2=2.0 1/m`	Second parameter for CLM.
196	`clm3=1.0`	Third parameter for CLM.
197	`clm5=1.0`	Effect of pocket implantation.
198	`clm6=0.0`	Effect of pocket implantation.

Substrate Current Effects

199	`sub1=50e-3 1/V`	First parameter for Isub. The default value is 10 for version 2.00/2.01 and version 1.23.
200	`sub2=1.0e2 V`	Second parameter for Isub. The default value is 25 for version 2.00/2.01 and version 1.23.
201	`svgs=0.8`	Substrate current dependence on Vgs.
202	`svbs=0.5`	Substrate current dependence on Vbs.
203	`svbsl=0.0`	Lgate dependence of SVBS.
204	`svds=0.8`	Substrate current dependence on Vds.
205	`slg=3.0e-8`	Substrate current dependence on Lgate.
206	`sub1l=2.5e-3`	Lgate dependence of SUB1.
207	`sub2l=2.0e-6`	Lgate dependence of SUB2.
208	`fn1=50.0`	Coefficient of Fowler-Nordheim-current contribution. The default value is 0.0 since version 2.00.
209	`fn2=1.7e-4`	Coefficient of Fowler-Nordheim-current contribution.
210	`fn3=0.0`	Coefficient of Fowler-Nordheim-current contribution.
211	`fvbs=1.2e-2`	Modification of Vbs dependence.
212	`svgsl=0.0`	Lgate dependence of SVGS.
213	`svgslp=1.0`	Lgate dependence of SVGS.
214	`svgswp=1.0`	Wgate dependence of SVGS.
215	`svgsw=0.0`	Wgate dependence of SVGS.
216	`svbslp=1.0`	Lgate dependence of SVBS.
217	`slgl=0.0`	Substrate current dependence on Lgate.
218	`slglp=1.0`	Substrate current dependence on Lgate.
219	`sub1lp=1.0`	Lgate dependence of SUB1.
220	`ibpc1=0.0`	Impact-ionization induced bulk potential change.
221	`ibpc1l=0.0`	Parameter for impact-ionization induced bulk potential change.
222	`ibpc1lp=-1.0`	Parameter for impact-ionization induced bulk potential change.
223	`ibpc2=0.0`	Impact-ionization induced bulk potential change.

Gate Current Effects

224	`glpart1=0.5`	Partitioning of gate current.
225	`gleak1=50.0 A/(V^(3/2) c^(1/2))`
		First gate current coefficient.
226	`gleak2=1.0e7 1/(V^(1/2) c^(3/2) m)`
		Second gate current coefficient.
227	`gleak3=6.0e-2`	Third gate current coefficient.
228	`gleak4=4.0`	Parameter for gate current.
229	`gleak5=7.5e3`	Parameter for gate current.
230	`glksd1=1.0e-15`	Parameter for gate current.
231	`glksd2=5e6`	Parameter for gate current. The default value is 1e3 since version 2.00.
232	`glksd3=-5e6`	Parameter for gate current. The default value is -1e3 since version 2.00.
233	`glkb1=5.0e-16`	Parameter for gate current.
234	`glkb2=1.0`	Parameter for gate current.
235	`gleak6=0.25 V`	Parameter for gate current.
236	`gleak7=1.0e-6 m`²	Parameter for gate current.
237	`glkb3=0.0 V`	Parameter for gate current.
238	`egig=0.0 V`	Parameter for gate current.

GIDL Current Effects

239	`gidl1=2.0 A m/(V^(3/2) c^(1/2))`
		First parameter for GIDL.
240	`gidl2=3.0E7 1/(V^(1/2) c^(3/2) m)`
		Second parameter for GIDL.
241	`gidl3=0.9`	Third parameter for GIDL.
242	`gidl4=0.9`	Parameter for GIDL. The default value is 0.0 for version 2.00/2.01 and version 1.23.
243	`gidl5=0.2`	Parameter for GIDL.

Noise 1/f Effects

244	`nfalp=1.0e-19`	Flicker (1/f) noise contribution of the mobility fluctuation.
245	`falph=1.0`	Parameter for 1/f noise.
246	`nftrp=1.0e10`	Flicker (1/f) noise ratio of trap density to attenuation coefficient.
247	`cit=0.0`	Flicker (1/f) noise interface trapped carriers capacitance.

Subthreshold swing parameters

248

pthrou=0.0

Modify subthreshold sloop.

NQS parameters

249	`dly1=1.0e-10`	Parameter for transit time.
250	`dly2=0.7`	Parameter for transit time.
251	`dly3=8.0e-7` Ω	Parameter for transforming bulk charge.
252	`dlyov=0.0` Ω	Parameter for transforming overlap charge.
253	`nqsc`
254	`minr=1.0e-3`	Minimum parasitic resistance, resistance smaller than minr will be clamped as minr.
255	`minc=1.0e-30`	Minimum diagonal capacitance.
256	`coclampc=1`	The flag of clamp minc.

Symmetry for short-channel mosfet

257	`vzadd0=1.0e-2 V`	Vzadd at Vds=0.
258	`pzadd0=5.0e-3 V`	Pzadd at Vds=0.

P-N junctions parameters

259	`js0=5.0e-7 A/m`²	Junction saturation current density.
260	`js0sw=0.0 A/m`	Side-wall saturation current density.
261	`nj=1.0`	Junction emission coefficient.
262	`njsw=1.0`	Junction emission coefficient (sidewall).
263	`xti=2.0`	Junction saturation current temperature exponent coefficient.
264	`cj=5.0e-4 F/m`²	Bottom junction capacitance per unit area at zero bias.
265	`cjsw=5e-10 F/m`	Source/drain sidewall junction capacitance per unit length at zero bias.
266	`cjswg=5e-10 F/m`	Source/drain sidewall junction capacitance grading coefficient per unit length at zero bias.
267	`tcjbd=0.0`	Temperature dependence of czbd.
268	`tcjbdsw=0.0`	Temperature dependence of czbdsw.
269	`tcjbdswg=0.0`	Temperature dependence of czbdswg.
270	`tcjbs=0.0`	Temperature dependence of czbs.
271	`tcjbssw=0.0`	Temperature dependence of czbssw.
272	`tcjbsswg=0.0`	Temperature dependence of czbsswg.
273	`mj=0.5`	Bulk junction bottom grading coefficient.
274	`mjsw=0.33`	Source/drain sidewall junction capacitance grading coefficient.
275	`mjswg=0.33`	Bottom junction capacitance grading coefficient.
276	`pb=1.0 V`	Bottom junction build-in potential.
277	`pbsw=1.0 V`	Source/drain sidewall junction build-in potential.
278	`pbswg=1.0 V`	Source/drain gate sidewall junction build-in potential.
279	`vdiffj=6.0e-4 V`	Threshold voltage for S/D junction diode.
280	`xti2=0.0`	Temperature coefficient.
281	`cisb=0.0`	Reverse bias saturation current.
282	`cvb=0.0`	Bias dependence coefficient of cisb.
283	`ctemp=0.0`	Temperature coefficient.
284	`cisbk=0.0 A`	Reverse bias saturation current.
285	`cvbk=0.0`	Bias dependence coefficient of cisb.
286	`divx=0.0 1/V`	Parameter for junction.

Overlap capacitance parameters

287	`cgso=0.0 F/m`	Gate-source overlap capacitance.
288	`cgdo=0.0 F/m`	Gate-drain overlap capacitance.
289	`cgbo=0.0 F/m`	Gate-bulk overlap capacitance.
290	`ovslp=2.0e-8`	Parameter for overlap capacitance. The default value is 2.1e-7 for version 2.00/2.01 and version 1.23.
291	`ovmag=500.0`	Parameter for overlap capacitance. The default value is 0.6 for version 2.00/2.01 and version 1.23.
292	`vfbover=-0.5 V`	Flat-band voltage in overlap region.
293	`nover=3.0e16 cm`^-3	Impurity concentration in overlap region. The default value is set to 1.0e17 for versions 2.00 and 2.01.
294	`novers=0.0 cm`^-3	Impurity concentration in overlap region. The default value is set to 1.0e17 since version 2.10.

Smoothing coefficient between linear and saturation

295	`coddlt=1`	Selector for DDLT model, since version 2.20.
296	`ddltmax=1.0`	Coefficient of effective electric field. The default value is 10 for version 2.00/2.01 and 1.23.
297	`ddltslp=0.0`	Lgate dependence of smoothing coefficient.
298	`ddltict=10.0`	Lgate dependence of smoothing coefficient.

DFM parameters

299

mphdfm=-0.3

NSUBCDFM dependence of phonon scattering for DFM.

Substrate model parameters

300	`rdvsub=1.0`	Vsub dependence of depletion width.
301	`rdvdsub=0.3`	Vds dependence of depletion width.
302	`ddrift=1.0e-6 m`	Depth of the drift region.
303	`vbisub=0.7 V`	Built-in potential at the drift/substrate junction.
304	`nsubsub=1.0e15 cm`^-3
		Impurity concentration of the substrate required for Vsub dependence.

Operating region warning control parameters

305	`warn=off`	Parameter to turn warnings on and off. Possible values are `off` and `on`.
306	`bvd (V)`	Drain diode breakdown voltage, take effect when bvj not given.
307	`bvs (V)`	Source diode breakdown voltage, take effect when bvj not given.
308	`bvj (V)`	Junction reverse breakdown voltage.
309	`vbox=3e9 tox V`	Oxide breakdown voltage.

Mismatch parameters

310	`mvtwl=0.0 V m`	Threshold mismatch area dependence.
311	`mvt0=0.0 V`	Threshold mismatch intercept.
312	`mbewl=0.0 m`	Beta mismatch area dependence.
313	`mbe0=0.0`	Beta mismatch intercept.
314	`mvtwl2=0.0 V m^1.5`
		Threshold mismatch area square dependence.
315	`mismatchmod=0`	Mismatch mode selector. The available modes are 0, 1, 2 and 3.
316	`mismatchvec1=[...]`
		Vector 1 used in mismatch.
317	`mismatchvec2=[...]`
		Vector 2 used in mismatch.
318	`mismatchvec3=[...]`
		Vector 3 used in mismatch.
319	`mismatchvec4=[...]`
		Vector 4 used in mismatch.
320	`mismatchdist=0 m`	Mismatch Distance.

LDMOS special parameters

321	`ndepml=0.0`	Lgate dependence of impurity concentration of the surface N^- layer.
322	`ndepmlp=1.0`	Lgate dependence of impurity concentration of the surface N^- layer.
323	`rdvg11=0.0`	Vgs dependence of RD.
324	`rdvg12=1.0e2`	Vgs dependence of RD.
325	`vbsmin=-10.5 V`	Minimum back bias voltage to be treated in hsmhveval.
326	`rth0=0.1 Kcm/W`	Thermal resistance.
327	`cth0=1.0e-7 Ws/Kcm`
		Thermal capacitance.
328	`qdftvd=1.0`	Qdrift Vd dependence.
329	`rdvd=7.0e-2`	Vds dependence of RD.
330	`rdvb=0.0`	Vbs dependence of RD.
331	`rd20=0.0`	RD23 boundary.
332	`rd21=1.0`	Vds dependence of RD.
333	`rd22=0.0`	Vbs dependence of RD.
334	`rd22d=0.0`	Vbs dependence of RD.
335	`rd23=5e-3`	Modification of RD.
336	`rd24=0.0`	Vgs dependence of RD.
337	`rd25=0.0`	Vgs dependence of RD.
338	`rd26=0.2`	Smoothing Qover at depletion/inversion transition.
339	`qovsm=0.2`	Smoothing Qover at depletion/inversion transition.
340	`rdvdl=0.0`	Lgate dependence of RD.
341	`rdvdlp=1.0`	Lgate dependence of RD.
342	`rdvds=0.0`	Small size dependence of RD.
343	`rdvdsp=1.0`	Small size dependence of RD.
344	`rd23l=0.0`	Lgate dependence of RD23 boundary.
345	`rd23lp=1.0`	Lgate dependence of RD23 boundary.
346	`rd23s=0.0`	Small size dependence of RD23.
347	`rd23sp=1.0`	Small size dependence of RD23.
348	`rds=0.0`	Small size dependence of RD.
349	`rdsp=1.0`	Small size dependence of RD.
350	`ldrift=1.0e-6`	Length of drift region.
351	`rth0r=0.0`	Heat radiation for SHE.
352	`rth0w=0.0`	Width-dependence of RTH0.
353	`rth0wp=1.0`	Width-dependence of RTH0.
354	`rth0nf=0.0`	Nf-dependence of RTH0.
355	`cvdsover=0.0`	Modification of the Cgg spikes for Vds is not zero.
356	`powrat=1.0`	Thermal dissipation.
357	`shemax=500.0 K`	The maximum temperature rise due to the selfheating.
358	`shemaxdlt=0.1 K`	Delta for the SHEMAX smoothing.
359	`vgsmin=-100 V`	Minimal/maximal expected Vgs (NMOS/PMOS).

Auto Model Selector parameters

360	`wmax=1 m`	Maximum channel width for which the model is valid.
361	`wmin=0 m`	Minimum channel width for which the model is valid.
362	`lmax=1 m`	Maximum channel length for which the model is valid.
363	`lmin=0 m`	Minimum channel length for which the model is valid.
364	`ptl=0.0`	Strength for punchthrough effect.
365	`ptp=3.5`	Strength for punchthrough effect.
366	`pt2=0.0`	Vds dependence of punchthrough effect.
367	`ptlp=1.0`	Channel-length dependence of punchthrough effect.
368	`gdl=0.0`	Strength of high-field effect.
369	`gdlp=0.0`	Channel-length dependence of high-field effect.
370	`gdld=0.0`	Channel-length dependence of high-field effect.
371	`pt4=0.0`	Vbs dependence of punchthrough effect.
372	`pt4p=1.0`	Vbs dependence of punchthrough effect.
373	`rdrmue=2.0e3`	Field dependent mobility in the drift region for cordrift=1.
374	`rdrvmax=1.0e7`	Saturation velocity in drift region, defaulted as 3e7 since version 2.10.
375	`rdrmuetmp=0.0`	Temperature dependence of resistance for cordrift=1.
376	`rdrvtmp=0.0`	Temperature dependence of resistance for cordrift=1.
377	`rdrdjunc=1.0e-6`	Junction depth at channel/drift region.
378	`rdrcx=0.0`	Exude of current flow from Xov.
379	`rdrcar=0.0`	High field injection in drift region.
380	`rdrdl1=0.0`	Effective ldrift of current in drift region.
381	`rdrdl2=0.0`	Pinch-off length in drift region.
382	`rdrvmaxw=0.0`	Saturation velocity Wgate dependence.
383	`rdrvmaxwp=1.0`	Saturation velocity Wgate dependence.
384	`rdrvmaxl=0.0`	Saturation velocity Lgate dependence.
385	`rdrvmaxlp=1.0`	Saturation velocity Lgate dependence.
386	`rdrmuel=0.0`	Mobility in drift region Lgate dependence.
387	`rdrmuelp=1.0`	Mobility in drift region Lgate dependence.
388	`rdrqover=0.0`	Inclusion of the overlap charge into rdrift. The default value is set to 1.0e5 since version 2.10.
389	`js0d=js0 A/m`²	Saturation current density for drain junction.
390	`js0swd=js0sw A/m`	Side wall saturation current density for drain junction.
39‘	`njd=nj`	Emission coefficient for drain junction.
392	`njswd=njsw`	Emission coefficient for drain junction.
393	`xtid=xti`	Junction current temperature exponent coefficient for drain junction.
394	`cjd=cj F/m`²	Bottom junction capacitance per unit area at zero bias for drain junction.
395	`cjswd=cjsw F/m`	Sidewall junction capacitance grading coefficient per unit length at zero bias for drain junction.
396	`cjswgd=cjswg F/m`	Gate sidewall junction capacitance per unit length at zero bias for drain junction.
397	`mjd=mj`	Bottom junction capacitance grading coefficient for drain junction.
398	`mjswd=mjsw`	Sidewall junction capacitance grading coefficient for drain junction.
399	`mjswgd=mjswg`	Gate sidewall junction capacitance grading coefficient for drain junction.
400	`pbd=pb V`	Bottom junction build-in potential for drain junction.
400	`pbswd=pbsw V`	Sidewall junction build-in potential for drain junction.
401	`pbswgd=pbswg V`	Gate sidewall junction build-in potential for drain junction.
402	`xti2d=xti2`	Temperature coefficient for drain junction.
403	`cisbd=cisb`	Reverse bias saturation current for drain junction.
404	`cvbd=cvb`	Bias dependence coefficient of cisb for drain junction.
405	`ctempd=ctemp`	Temperature coefficient for drain junction.
406	`cisbkd=cisbk A`	Reverse bias saturation current for drain junction.
407	`divxd=divx 1/V`	Reverse coefficient for drain junction.
408	`vdiffjd=vdiffj V`	Reverse coefficient for drain junction.
409	`js0s=js0d A/m`²	Saturation current density for source junction.
410	`js0sws=js0swd A/m`	Side wall saturation current density for source junction.
412	`njs=njd`	Emission coefficient for source junction.
413	`njsws=njswd`	Sidewall emission coefficient for source junction.
414	`xtis=xtid`	Junction current temperature exponent coefficient for source junction.
415	`cjs=cjd F/m`²	Bottom junction capacitance per unit area at zero bias for source junction.
416	`cjsws=cjswd F/m`	Sidewall junction capacitance grading coefficient per unit length at zero bias for source junction.
417	`cjswgs=cjswgd F/m`	Gate sidewall junction capacitance per unit length at zero bias for source junction.
418	`mjs=mjd`	Bottom junction capacitance grading coefficient for source junction.
419	`mjsws=mjswd`	Sidewall junction capacitance grading coefficient for source junction.
420	`mjswgs=mjswgd`	Gate sidewall junction capacitance grading coefficient for source junction.
421	`pbs=pbd V`	Bottom junction build-in potential for source junction.
422	`pbsws=pbswd V`	Sidewall junction build-in potential for source junction.
423	`pbswgs=pbswgd V`	Gate sidewall junction build-in potential for source junction.
424	`xti2s=xti2d`	Temperature coefficient for source junction.
425	`cisbs=cisbd`	Reverse bias saturation current for source junction.
426	`cvbs=cvbd`	Bias dependence coefficient of cisb for source junction.
427	`ctemps=ctempd`	Temperature coefficient for source junction.
428	`cisbks=cisbkd A`	Reverse bias saturation current for source junction.
429	`divxs=divxd 1/V`	Reverse coefficient for source junction.
430	`vdiffjs=vdiffjd V`	Threshold voltage for junction diode for source junction.

New Depletion Mode Parameters (since version 2.20)

431	`codep=0`	Selector for depletion device.
432	`ndepm=1e17 cm`^-3	N-layer concentration of the depletion MOS model.
433	`tndep=2e-7 m`	N-layer depth of the depletion MOS model.
434	`depmue0=1e3 cm`²`/(V s)`
		Coulomb scattering of resistor region.
435	`depmue1=0 cm`²`/(V s)`
		Coulomb scattering of resistor region.
436	`depmueback0=100 cm`²`/(V s)`
		Coulomb scattering of back region.
437	`depmueback1=0 cm`²`/(V s)`
		Coulomb scattering of back region.
438	`depleak=0.5`	Leakage current coefficient.
439	`depeta=0 1/V`	Vds dependence.
440	`depvmax=3e7 cm/s`	Velocity saturation.
441	`depvdsef1=2.0 V`	Vds dependence of leakage current.
442	`depvdsef2=0.5`	Vds dependence of leakage current.
443	`depmueph0=0.3`	Phonon scattering.
444	`depmueph1=5e3`	Phonon scattering.
445	`depbb=1`	High field effect coefficient.
446	`depvtmp=0.0`	Temperature dependence of velocity saturation.
447	`depmuetmp=1.5`	Temperature dependence of mobility.
448	`isbreak=1e-12`	Reverse saturation current for breakdown.
449	`rwell=1e3`	Well resistance for breakdown.
450	`mueefb=0 1/V`	Vbs dependence of the phonon scattering.
451	`subtmp=0 1/T`	Temperature dependence of Isub.
452	`rth0l=0.0`	Length dependence of RTH0.
453	`rth0lp=1.0`	Length dependence of RTH0.
454	`tndepv=0.0 1/V`	Vds dependence of TNDEP.
455	`depmue2=1.0e3`	Coulomb scattering of resistor part.
456	`depmuea1=0`	Modification of resistor part mobility.
457	`depddlt=3.0`	Smoothing coefficient for Vds, resistor part.
458	`depvfbc=vfbc V`	Flat bandvoltage of the resistor part.
459	`depsubsl=2.0`	Factor of the sub-threshold slope.
460	`depmue0tmp=0`	Temperature dependence of DEPMUE0.
461	`depmue2tmp=0`	Temperature dependence of DEPMUE2.
462	`depvgpsl=0`	Smoothing coefficient for gm.
463	`depvsatr=0`	Vbs dependence of Vds_sat of the resistor part.
464	`qovjunc=0`	Wjunc coefficient for the LoverLD modification.

New Hard BreakDown Voltage Parameters (since version 2.30)

465	`cohbd=0`	Selector for Hard Breakdown Model.
466	`hbda=0`	Coefficient for Hard Breakdown Voltage.
467	`hbdb=0`	Coefficient for Hard Breakdown Voltage.
468	`hbdc=100.0`	Coefficient for Hard Breakdown Voltage.
469	`hbdctmp=0`	Coefficient for Hard Breakdown Voltage.
470	`hbdf=1.0`	Coefficient for Hard Breakdown Voltage.

Binning model parameters

471	`lbinn=1.0`	Length modulation coefficient for binning.
472	`wbinn=1.0`	Width modulation coefficient for binning.
473	`lvmax=0.0 cm/s`	Length dependence of vmax.
474	`lbgtmp1=0.0 eV/K`	Length dependence of bgtmp1.
475	`lbgtmp2=0.0 eV/K`²
		Length dependence of bgtmp2.
476	`leg0=0.0 eV`	Length dependence of eg0.
477	`lnovers=0.0 cm`^-3	Length dependence of novers.
478	`lvfbover=0.0 V`	Length dependence of vfbover.
479	`lnover=0.0 cm`^-3	Length dependence of nover.
480	`lwl2=0.0`	Length dependence of wl2.
481	`lvfbc=0.0 V`	Length dependence of vfbc.
482	`lnsubc=0.0 cm`^-3	Length dependence of nsubc.
483	`lnsubp=0.0 cm`^-3	Length dependence of nsubp.
484	`lscp1=0.0 1/V`	Length dependence of scp1.
485	`lscp2=0.0 1/V`²	Length dependence of scp2.
486	`lscp3=0.0 m/V`²	Length dependence of scp3.
487	`lsc1=0.0 1/V`	Length dependence of sc1.
488	`lsc2=0.0 1/V`²	Length dependence of sc2.
489	`lsc3=0.0 m/V`²	Length dependence of sc3.
490	`lpgd1=0.0 V`	Length dependence of pgd1.
491	`lpgd3=0.0`	Length dependence of pgd3.
492	`lndep=0.0`	Length dependence of ndep.
493	`lninv=0.0`	Length dependence of ninv.
494	`lmuecb0=0.0 cm`²`/(V s)`
		Length dependence of muecb0.
495	`lmuecb1=0.0 cm`²`/(V s)`
		Length dependence of muecb1.
496	`lmueph1=0.0`	Length dependence of mueph1.
497	`lvtmp=0.0 cm/s`	Length dependence of vtmp.
498	`lwvth0=0.0`	Length dependence of wvth0.
499	`lmuesr1=0.0`	Length dependence of muesr1.
500	`lmuetmp=0.0`	Length dependence of muetmp.
501	`lsub1=0.0 1/V`	Length dependence of sub1.
502	`lsub2=0.0 V`	Length dependence of sub2.
503	`lsvds=0.0`	Length dependence of svds.
504	`lsvbs=0.0`	Length dependence of svbs.
505	`lsvgs=0.0`	Length dependence of svgs.
506	`lfn1=0.0`	Length dependence of fn1.
507	`lfn2=0.0`	Length dependence of fn2.
508	`lfn3=0.0`	Length dependence of fn3.
509	`lfvbs=0.0`	Length dependence of fvbs.
510	`lnsti=0.0 cm`^-3	Length dependence of nsti.
511	`lwsti=0.0 m`	Length dependence of wsti.
512	`lscsti1=0.0`	Length dependence of scsti1.
513	`lscsti2=0.0 1/V`	Length dependence of scsti2.
514	`lvthsti=0.0`	Length dependence of vthsti.
515	`lmuesti1=0.0`	Length dependence of muesti1.
516	`lmuesti2=0.0`	Length dependence of muesti2.
517	`lmuesti3=0.0`	Length dependence of muesti3.
518	`lnsubpsti1=0.0 m`	Length dependence of nsubpsti1.
519	`lnsubpsti2=0.0 m`	Length dependence of nsubpsti2.
520	`lnsubpsti3=0.0 m`	Length dependence of nsubpsti3.
521	`lcgso=0.0 F/m`	Length dependence of cgso.
522	`lcgdo=0.0 F/m`	Length dependence of cgdo.
523	`ljs0=0.0 A/m`²	Length dependence of js0.
524	`ljs0sw=0.0 A/m`	Length dependence of js0sw.
525	`lnj=0.0`	Length dependence of nj.
526	`lcisbk=0.0 A`	Length dependence of cisbk.
527	`lclm1=0.0`	Length dependence of clm1.
528	`lclm2=0.0 1/m`	Length dependence of clm2.
529	`lclm3=0.0`	Length dependence of clm3.
530	`lwfc=0.0 m F/cm`²	Length dependence of wfc.
531	`lgidl1=0.0 A m/(V^(3/2) c^(1/2))`
		Length dependence of gidl1.
532	`lgidl2=0.0 1/(V^(1/2) c^(3/2) m)`
		Length dependence of gidl2.
533	`lgleak1=0.0 A/(V^(3/2) c^(1/2))`
		Length dependence of gleak1.
534	`lgleak2=0.0 1/(V^(1/2) c^(3/2) m)`
		Length dependence of gleak2.
535	`lgleak3=0.0`	Length dependence of gleak3.
536	`lgleak6=0.0 V`	Length dependence of gleak6.
537	`lglksd1=0.0`	Length dependence of glksd1.
538	`lglksd2=0.0`	Length dependence of glksd2.
539	`lglkb1=0.0`	Length dependence of glkb1.
540	`lglkb2=0.0`	Length dependence of glkb2.
541	`lnftrp=0.0`	Length dependence of nftrp.
542	`lnfalp=0.0`	Length dependence of nfalp.
543	`lpthrou=0.0`	Length dependence of pthrou.
544	`lvdiffj=0.0 V`	Length dependence of vdiffj.
545	`libpc1=0.0`	Length dependence of ibpc1.
546	`libpc2=0.0`	Length dependence of ibpc2.
547	`lcgbo=0.0`	Length dependence of cgbo.
548	`lcvdsover=0.0`	Length dependence of cvdsover.
549	`lfalph=0.0`	Length dependence of falph.
550	`lnpext=0.0`	Length dependence of npext.
551	`lpowrat=0.0`	Length dependence of powrat.
552	`lrd=0.0`	Length dependence of rd.
553	`lrd22=0.0`	Length dependence of rd22.
554	`lrd23=0.0`	Length dependence of rd23.
555	`lrd24=0.0`	Length dependence of rd24.
556	`lrdict1=0.0`	Length dependence of rdict1.
557	`lrdov13=0.0`	Length dependence of rdov13.
558	`lrdslp1=0.0`	Length dependence of rdslp1.
559	`lrdvb=0.0`	Length dependence of rdvb.
560	`lrdvd=0.0`	Length dependence of rdvd.
561	`lrdvg11=0.0`	Length dependence of rdvg11.
562	`lrs=0.0`	Length dependence of rs.
563	`lrth0=0.0`	Length dependence of rth0.
564	`lvover=0.0`	Length dependence of vover.
565	`ljs0d=ljs0`	Length dependence of js0d.
566	`ljs0swd=ljs0sw`	Length dependence of js0swd.
567	`lnjd=lnj`	Length dependence of njd.
568	`lcisbkd=lcisbk`	Length dependence of cisbkd.
569	`lvdiffjd=lvdiffj`	Length dependence of vdiffjd.
570	`ljs0s=ljs0d`	Length dependence of js0s.
571	`ljs0sws=ljs0swd`	Length dependence of js0sws.
572	`lnjs=lnjd`	Length dependence of njs.
573	`lcisbks=lcisbkd`	Length dependence of cisbks.
574	`lvdiffjs=lvdiffjd`
		Length dependence of vdiffjs.
575	`wvmax=0.0 cm/s`	Width dependence of vmax.
576	`wbgtmp1=0.0 eV/K`	Width dependence of bgtmp1.
577	`wbgtmp2=0.0 eV/K`²
		Width dependence of bgtmp2.
578	`weg0=0.0 eV`	Width dependence of eg0.
579	`wnovers=0.0 cm`^-3	Width dependence of novers.
580	`wvfbover=0.0 V`	Width dependence of vfbover.
581	`wnover=0.0 cm`^-3	Width dependence of nover.
582	`wwl2=0.0`	Width dependence of wl2.
583	`wvfbc=0.0 V`	Width dependence of vfbc.
584	`wnsubc=0.0 cm`^-3	Width dependence of nsubc.
585	`wnsubp=0.0 cm`^-3	Width dependence of nsubp.
586	`wscp1=0.0 1/V`	Width dependence of scp1.
587	`wscp2=0.0 1/V`²	Width dependence of scp2.
588	`wscp3=0.0 m/V`²	Width dependence of scp3.
589	`wsc1=0.0 1/V`	Width dependence of sc1.
590	`wsc2=0.0 1/V`²	Width dependence of sc2.
591	`wsc3=0.0 m/V`²	Width dependence of sc3.
592	`wpgd1=0.0 V`	Width dependence of pgd1.
593	`wpgd3=0.0`	Width dependence of pgd3.
594	`wndep=0.0`	Width dependence of ndep.
595	`wninv=0.0`	Width dependence of ninv.
596	`wmuecb0=0.0 cm`²`/(V s)`
		Width dependence of muecb0.
597	`wmuecb1=0.0 cm`²`/(V s)`
		Width dependence of muecb1.
598	`wmueph1=0.0`	Width dependence of mueph1.
599	`wvtmp=0.0 cm/s`	Width dependence of vtmp.
600	`wwvth0=0.0`	Width dependence of wvth0.
601	`wmuesr1=0.0`	Width dependence of muesr1.
602	`wmuetmp=0.0`	Width dependence of muetmp.
603	`wsub1=0.0 1/V`	Width dependence of sub1.
604	`wsub2=0.0 V`	Width dependence of sub2.
605	`wsvds=0.0`	Width dependence of svds.
606	`wsvbs=0.0`	Width dependence of svbs.
607	`wsvgs=0.0`	Width dependence of svgs.
608	`wfn1=0.0`	Width dependence of fn1.
609	`wfn2=0.0`	Width dependence of fn2.
610	`wfn3=0.0`	Width dependence of fn3.
611	`wfvbs=0.0`	Width dependence of fvbs.
612	`wnsti=0.0 cm`^-3	Width dependence of nsti.
613	`wwsti=0.0 m`	Width dependence of wsti.
614	`wscsti1=0.0`	Width dependence of scsti1.
615	`wscsti2=0.0 1/V`	Width dependence of scsti2.
616	`wvthsti=0.0`	Width dependence of vthsti.
617	`wmuesti1=0.0`	Width dependence of muesti1.
618	`wmuesti2=0.0`	Width dependence of muesti2.
619	`wmuesti3=0.0`	Width dependence of muesti3.
620	`wnsubpsti1=0.0 m`	Width dependence of nsubpsti1.
621	`wnsubpsti2=0.0 m`	Width dependence of nsubpsti2.
622	`wnsubpsti3=0.0 m`	Width dependence of nsubpsti3.
623	`wcgso=0.0 F/m`	Width dependence of cgso.
624	`wcgdo=0.0 F/m`	Width dependence of cgdo.
625	`wjs0=0.0 A/m`²	Width dependence of js0.
626	`wjs0sw=0.0 A/m`	Width dependence of js0sw.
627	`wnj=0.0`	Width dependence of nj.
628	`wcisbk=0.0 A`	Width dependence of cisbk.
629	`wclm1=0.0`	Width dependence of clm1.
630	`wclm2=0.0 1/m`	Width dependence of clm2.
631	`wclm3=0.0`	Width dependence of clm3.
632	`wwfc=0.0 m F/cm`²	Width dependence of wfc.
633	`wgidl1=0.0 A m/(V^(3/2) c^(1/2))`
		Width dependence of gidl1.
634	`wgidl2=0.0 1/(V^(1/2) c^(3/2) m)`
		Width dependence of gidl2.
635	`wgleak1=0.0 A/(V^(3/2) c^(1/2))`
		Width dependence of gleak1.
636	`wgleak2=0.0 1/(V^(1/2) c^(3/2) m)`
		Width dependence of gleak2.
637	`wgleak3=0.0`	Width dependence of gleak3.
638	`wgleak6=0.0 V`	Width dependence of gleak6.
639	`wglksd1=0.0`	Width dependence of glksd1.
640	`wglksd2=0.0`	Width dependence of glksd2.
641	`wglkb1=0.0`	Width dependence of glkb1.
642	`wglkb2=0.0`	Width dependence of glkb2.
643	`wnftrp=0.0`	Width dependence of nftrp.
644	`wnfalp=0.0`	Width dependence of nfalp.
645	`wpthrou=0.0`	Width dependence of pthrou.
646	`wvdiffj=0.0 V`	Width dependence of vdiffj.
647	`wibpc1=0.0`	Width dependence of ibpc1.
648	`wibpc2=0.0`	Width dependence of ibpc2.
649	`wcgbo=0.0`	Width dependence of cgbo.
650	`wcvdsover=0.0`	Width dependence of cvdsover.
651	`wfalph=0.0`	Width dependence of falph.
652	`wnpext=0.0`	Width dependence of npext.
653	`wpowrat=0.0`	Width dependence of powrat.
654	`wrd=0.0`	Width dependence of rd.
655	`wrd22=0.0`	Width dependence of rd22.
656	`wrd23=0.0`	Width dependence of rd23.
657	`wrd24=0.0`	Width dependence of rd24.
658	`wrdict1=0.0`	Width dependence of rdict1.
659	`wrdov13=0.0`	Width dependence of rdov13.
660	`wrdslp1=0.0`	Width dependence of rdslp1.
661	`wrdvb=0.0`	Width dependence of rdvb.
662	`wrdvd=0.0`	Width dependence of rdvd.
663	`wrdvg11=0.0`	Width dependence of rdvg11.
664	`wrs=0.0`	Width dependence of rs.
665	`wrth0=0.0`	Width dependence of rth0.
666	`wvover=0.0`	Width dependence of vover.
667	`wjs0d=wjs0`	Width dependence of js0d.
668	`wjs0swd`	Width dependence of js0swd.
669	`wnjd`	Width dependence of njd.
670	`wcisbkd`	Width dependence of cisbkd.
671	`wvdiffjd`	Width dependence of vdiffjd.
672	`wjs0s`	Width dependence of js0s.
673	`wjs0sws`	Width dependence of js0sws.
674	`wnjs`	Width dependence of njs.
675	`wcisbks`	Width dependence of cisbks.
676	`wvdiffjs`	Width dependence of vdiffjs.
677	`pvmax=0.0 cm/s`	Cross-term dependence of vmax.
678	`pbgtmp1=0.0 eV/K`	Cross-term dependence of bgtmp1.
679	`pbgtmp2=0.0 eV/K`²
		Cross-term dependence of bgtmp2.
680	`peg0=0.0 eV`	Cross-term dependence of eg0.
681	`pnovers=0.0 cm`^-3	Cross-term dependence of novers.
682	`pvfbover=0.0 V`	Cross-term dependence of vfbover.
683	`pnover=0.0 cm`^-3	Cross-term dependence of nover.
684	`pwl2=0.0`	Cross-term dependence of wl2.
685	`pvfbc=0.0 V`	Cross-term dependence of vfbc.
686	`pnsubc=0.0 cm`^-3	Cross-term dependence of nsubc.
687	`pnsubp=0.0 cm`^-3	Cross-term dependence of nsubp.
688	`pscp1=0.0 1/V`	Cross-term dependence of scp1.
689	`pscp2=0.0 1/V`²	Cross-term dependence of scp2.
690	`pscp3=0.0 m/V`²	Cross-term dependence of scp3.
691	`psc1=0.0 1/V`	Cross-term dependence of sc1.
692	`psc2=0.0 1/V`²	Cross-term dependence of sc2.
693	`psc3=0.0 m/V`²	Cross-term dependence of sc3.
694	`ppgd1=0.0 V`	Cross-term dependence of pgd1.
695	`ppgd3=0.0`	Cross-term dependence of pgd3.
696	`pndep=0.0`	Cross-term dependence of ndep.
697	`pninv=0.0`	Cross-term dependence of ninv.
698	`pmuecb0=0.0 cm`²`/(V s)`
		Cross-term dependence of muecb0.
699	`pmuecb1=0.0 cm`²`/(V s)`
		Cross-term dependence of muecb1.
700	`pmueph1=0.0`	Cross-term dependence of mueph1.
701	`pvtmp=0.0 cm/s`	Cross-term dependence of vtmp.
702	`pwvth0=0.0`	Cross-term dependence of wvth0.
703	`pmuesr1=0.0`	Cross-term dependence of muesr1.
704	`pmuetmp=0.0`	Cross-term dependence of muetmp.
705	`psub1=0.0 1/V`	Cross-term dependence of sub1.
706	`psub2=0.0 V`	Cross-term dependence of sub2.
707	`psvds=0.0`	Cross-term dependence of svds.
708	`psvbs=0.0`	Cross-term dependence of svbs.
709	`psvgs=0.0`	Cross-term dependence of svgs.
710	`pfn1=0.0`	Cross-term dependence of fn1.
711	`pfn2=0.0`	Cross-term dependence of fn2.
712	`pfn3=0.0`	Cross-term dependence of fn3.
713	`pfvbs=0.0`	Cross-term dependence of fvbs.
714	`pnsti=0.0 cm`^-3	Cross-term dependence of nsti.
715	`pwsti=0.0 m`	Cross-term dependence of wsti.
716	`pscsti1=0.0`	Cross-term dependence of scsti1.
717	`pscsti2=0.0 1/V`	Cross-term dependence of scsti2.
718	`pvthsti=0.0`	Cross-term dependence of vthsti.
719	`pmuesti1=0.0`	Cross-term dependence of muesti1.
720	`pmuesti2=0.0`	Cross-term dependence of muesti2.
721	`pmuesti3=0.0`	Cross-term dependence of muesti3.
722	`pnsubpsti1=0.0 m`	Cross-term dependence of nsubpsti1.
723	`pnsubpsti2=0.0 m`	Cross-term dependence of nsubpsti2.
724	`pnsubpsti3=0.0 m`	Cross-term dependence of nsubpsti3.
725	`pcgso=0.0 F/m`	Cross-term dependence of cgso.
726	`pcgdo=0.0 F/m`	Cross-term dependence of cgdo.
727	`pjs0=0.0 A/m`²	Cross-term dependence of js0.
728	`pjs0sw=0.0 A/m`	Cross-term dependence of js0sw.
729	`pnj=0.0`	Cross-term dependence of nj.
730	`pcisbk=0.0 A`	Cross-term dependence of cisbk.
731	`pclm1=0.0`	Cross-term dependence of clm1.
732	`pclm2=0.0 1/m`	Cross-term dependence of clm2.
733	`pclm3=0.0`	Cross-term dependence of clm3.
734	`pwfc=0.0 m F/cm`²	Cross-term dependence of wfc.
735	`pgidl1=0.0 A m/(V^(3/2) c^(1/2))`
		Cross-term dependence of gidl1.
736	`pgidl2=0.0 1/(V^(1/2) c^(3/2) m)`
		Cross-term dependence of gidl2.
737	`pgleak1=0.0 A/(V^(3/2) c^(1/2))`
		Cross-term dependence of gleak1.
738	`pgleak2=0.0 1/(V^(1/2) c^(3/2) m)`
		Cross-term dependence of gleak2.
739	`pgleak3=0.0`	Cross-term dependence of gleak3.
740	`pgleak6=0.0 V`	Cross-term dependence of gleak6.
741	`pglksd1=0.0`	Cross-term dependence of glksd1.
742	`pglksd2=0.0`	Cross-term dependence of glksd2.
743	`pglkb1=0.0`	Cross-term dependence of glkb1.
744	`pglkb2=0.0`	Cross-term dependence of glkb2.
745	`pnftrp=0.0`	Cross-term dependence of nftrp.
746	`pnfalp=0.0`	Cross-term dependence of nfalp.
747	`ppthrou=0.0`	Cross-term dependence of pthrou.
748	`pvdiffj=0.0 V`	Cross-term dependence of vdiffj.
749	`pibpc1=0.0`	Cross-term dependence of ibpc1.
750	`pibpc2=0.0`	Cross-term dependence of ibpc2.
751	`pcgbo=0.0`	Cross-term dependence of cgbo.
752	`pcvdsover=0.0`	Cross-term dependence of cvdsover.
753	`pfalph=0.0`	Cross-term dependence of falph.
754	`pnpext=0.0`	Cross-term dependence of npext.
755	`ppowrat=0.0`	Cross-term dependence of powrat.
756	`prd=0.0`	Cross-term dependence of rd.
757	`prd22=0.0`	Cross-term dependence of rd22.
758	`prd23=0.0`	Cross-term dependence of rd23.
759	`prd24=0.0`	Cross-term dependence of rd24.
760	`prdict1=0.0`	Cross-term dependence of rdict1.
761	`prdov13=0.0`	Cross-term dependence of rdov13.
762	`prdslp1=0.0`	Cross-term dependence of rdslp1.
763	`prdvb=0.0`	Cross-term dependence of rdvb.
764	`prdvd=0.0`	Cross-term dependence of rdvd.
765	`prdvg11=0.0`	Cross-term dependence of rdvg11.
766	`prs=0.0`	Cross-term dependence of rs.
767	`prth0=0.0`	Cross-term dependence of rth0.
768	`pvover=0.0`	Cross-term dependence of vover.
769	`pjs0d`	Cross-term dependence of js0d.
770	`pjs0swd`	Cross-term dependence of js0swd.
771	`pnjd`	Cross-term dependence of njd.
772	`pcisbkd`	Cross-term dependence of cisbkd.
773	`pvdiffjd`	Cross-term dependence of vdiffjd.
774	`pjs0s`	Cross-term dependence of js0s.
775	`pjs0sws`	Cross-term dependence of js0sws.
776	`pnjs`	Cross-term dependence of njs.
777	`pcisbks`	Cross-term dependence of cisbks.
778	`pvdiffjs`	Cross-term dependence of vdiffjs.
779	`gdsleak=0.0 S`	Channel leakage conductance.
780	`coerrrep=1`	Selector for error report.

Safe Operating Areas Parameters

779	`vds_max=infinity V`
		Maximum allowed voltage cross source and drain.
780	`vgd_max=infinity V`
		Maximum allowed voltage cross drain and gate.
781	`vgs_max=infinity V`
		Maximum allowed voltage cross source/bulk and gate.
782	`vbd_max=infinity V`
		Maximum allowed voltage cross drain/source and bulk.
783	`vbs_max=vbd_max V`
		Maximum allowed voltage cross source and bulk.
784	`vgb_max=infinity V`
		Maximum allowed voltage cross gate and bulk.
785	`vgdr_max=vgd_max V`
		Maximum allowed reverse voltage cross gate and drain.
786	`vgsr_max=vgs_max V`
		Maximum allowed reverse voltage cross gate and source.
787	`vgbr_max=vgb_max V`
		Maximum allowed reverse voltage cross gate and bulk.
788	`vbsr_max=vbs_max V`
		Maximum allowed reverse voltage cross bulk and source.
789	`vbdr_max=vbd_max V`
		Maximum allowed reverse voltage cross bulk and drain.
790	`vthmod=0`	Vth output selector. `std` outputs model equation Vth. `vthcc` outputs constant current Vth, and may impact simulation performance. The default value is taken from the options parameter `vthmod`. Possible values are `std` and `vthcc`.
791	`ivth=0.0 A`	Vth current parameter. The default value is taken from the options parameter `ivthn` or `ivthp`, depending on the type of the model.
792	`ivthw=0.0 m`	Width offset for constant current Vth. The default value is taken from the options parameter `ivthw`.
793	`ivthl=0.0 m`	Length offset for constant current Vth. The default value is taken from the options parameter `ivthl`.
794	`ivth_vdsmin=0.05 V`
		Minimum Vds in constant current Vth calculating. The default value is taken from the options parameter `ivth_vdsmin`.
795	`ovcap_update=0`	Overlap bug fix special for IFX, default disable, set to 1 enable.

Output Parameters

1	`tempeff (C)`	Effective temperature for a single device.
2	`meff`	Effective multiplicity factor (m-factor).
3	`weff (m)`	Effective channel width.
4	`leff (m)`	Effective channel length.
5	`int_s`	The node index of internal source.
6	`int_d`	The node index of internal drain.

Operating-Point Parameters

1	`temp (C)`	Device temperature.
2	`tk (K)`	Actual device temperature in .
3	`shetemp (C)`	Temperature rise due to self-heating.
4	`dtsh (K)`	Temperature rise due to self-heating.
5	`reversed`	Reverse mode indicator. Possible values are `yes` and `no`.
6	`vdse (V)`	ExtDrain-ExtSource voltage.
7	`vgse (V)`	ExtGate-ExtSource voltage.
8	`vbse (V)`	ExtBulk-ExtSource voltage.
9	`ids (A)`	Resistive drain-to-source current.
10	`vds (V)`	Drain-source voltage.
11	`vgs (V)`	Gate-source voltage.
12	`vbs (V)`	Bulk-source voltage.
13	`vgd (V)`	Gate-drain voltage.
14	`vgb (V)`	Gate-bulk voltage.
15	`vdb (V)`	Drain-bulk voltage.
16	`idsres`	Resistor current of Depletion mode MOSFET.
17	`idsacc`	Accumulation current of Depletion mode MOSFET.
18	`vth (V)`	Threshold voltage.
19	`vdsat (V)`	Drain-source saturation voltage.
20	`region=triode`	Estimated operating region. Possible values are `off`, `triode`, `sat`, `subth`, and `breakdown`.
21	`gm (S)`	Common-source transconductance.
22	`gds (S)`	Common-source output conductance.
23	`gmbs (S)`	Body-transconductance.
24	`qb (Coul)`	Total bulk charge.
25	`qd (Coul)`	Total drain charge.
26	`qg (Coul)`	Total gate charge.
27	`qs (Coul)`	Total source charge.
28	`qb_itr (Coul)`	Intrinsic bulk charge.
29	`qd_itr (Coul)`	Intrinsic drain charge.
30	`qg_itr (Coul)`	Intrinsic gate charge.
31	`qs_itr (Coul)`	Intrinsic source charge.
32	`qdp (Coul)`	Total external drain charge.
33	`qsp (Coul)`	Total external source charge.
34	`cjd (F)`	Drain-bulk junction capacitance.
35	`cjs (F)`	Source-bulk junction capacitance.
36	`cgg (F)`	Intrinsic dQg_dVg.
37	`cgd (F)`	dQg_dVd.
38	`cgs (F)`	dQg_dVs.
39	`cgb (F)`	dQg_dVb.
40	`cdg (F)`	dQd_dVg.
41	`cdd (F)`	Intrinsic dQd_dVd.
42	`cds (F)`	dQd_dVs.
43	`cdb (F)`	dQd_dVb.
44	`csg (F)`	dQs_dVg.
45	`csd (F)`	dQs_dVd.
46	`css (F)`	Intrinsic dQs_dVs.
47	`csb (F)`	dQs_dVb.
48	`cbg (F)`	dQb_dVg.
49	`cbd (F)`	dQb_dVd.
50	`cbs (F)`	dQb_dVs.
51	`cbb (F)`	Intrinsic dQb_dVb.
52	`cdd_tot (F)`	Total dQd_dVd.
53	`cgg_tot (F)`	Total dQg_dVg.
54	`css_tot (F)`	Total dQs_dVs.
55	`cbb_tot (F)`	Total dQb_dVb.
56	`id (A)`	Resistive drain current.
57	`ig (A)`	Gate current.
58	`is (A)`	Resistive source current.
59	`ibulk (A)`	Resistive bulk current.
60	`pwr (W)`	Power at operating point.
61	`ps0 (V)`	Surface potential at source side.
62	`psl (V)`	Surface potential at drain side.
63	`pds (V)`	Delta surface potential between psl and ps0.
64	`isub (A)`	Substrate current Isub.
65	`isubld (A)`	Substrate current IsubLD.
66	`idsibpc (A)`	Impact-Ionization Induced Bulk Potential Change (IBPC).
67	`gbds (S)`	Substrate trans conductance (dIsub/dVds).
68	`gbgs (S)`	Substrate trans conductance (dIsub/dVgs).
69	`gbbs (S)`	Substrate transconductance (dIsub/dVbs).
70	`igate (A)`	Gate current due to tunneling.
71	`igates (A)`	Tunneling current from gate to source.
72	`igateb (A)`	Tunneling current from gate to bulk.
73	`igated (A)`	Tunneling current from gate to drain.
74	`igisl (A)`	Gate-induced source leakage current.
75	`igidl (A)`	Gate-induced drain leakage current.
76	`ibs (A)`	Source-bulk diode current.
77	`ibd (A)`	Source-drain diode current.
78	`cgso (F)`	Gate-source overlap capacitance.
79	`cgbo (F)`	Gate-bulk overlap capacitance.
80	`cgdo (F)`	Gate-drain overlap capacitance.
81	`rseff (`Ω`)`	Effective source resistance.
82	`rdeff (`Ω`)`	Effective drain resistance.
83	`rsdrift (`Ω`)`	The resistance of drift region for source side.
84	`rdrift (`Ω`)`	The resistance of drift region for drain side.
85	`gmt (S)`	Temp transconductance.
86	`lx4 (A)`	Resistive drain-to-source current.
87	`lx7 (S)`	Common-source transconductance.
88	`lx8 (S)`	Common-source output conductance.
89	`lv9 (V)`	Threshold voltage.
90	`lx142 (V)`	NULL.
91	`isub_total (A)`	Substrate current Isub.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.


ad I-4	lcgso M-519	pclm1 M-729	slg M-205
ad M-35	lcisbk M-524	pclm2 M-730	slgl M-217
alarm M-23	lcisbkd M-566	pclm3 M-731	slglp M-218
as I-3	lcisbks M-571	pcvdsover M-750	sub1 M-199
as M-34	lclm1 M-525	pd I-6	sub1l M-206
bb M-174	lclm2 M-526	pd M-37	sub1lp M-219
bgtmp1 M-101	lclm3 M-527	pds OP-63	sub2 M-200
bgtmp2 M-102	lcvdsover M-546	peg0 M-678	sub2l M-207
bs1 M-135	ldrift M-348	pfalph M-751	subld1 I-24
bs2 M-136	ldrift1 I-26	pfn1 M-708	subld1 M-90
bvd M-306	ldrift1 M-86	pfn2 M-709	subld1l M-91
bvj M-308	ldrift1s I-31	pfn3 M-710	subld1lp M-92
bvs M-307	ldrift1s M-87	pfvbs M-711	subld2 I-25
cbb OP-51	ldrift2 I-27	pgd1 M-121	subld2 M-93
cbb_tot OP-55	ldrift2 M-88	pgd2 M-122	subtmp M-449
cbd OP-49	ldrift2s I-32	pgd3 M-123	svbs M-202
cbg OP-48	ldrift2s M-89	pgd4 M-124	svbsl M-203
cbs OP-50	leff O-4	pgidl1 M-733	svbslp M-216
cdb OP-43	leg0 M-474	pgidl2 M-734	svds M-204
cdd OP-41	level M-2	pgleak1 M-735	svgs M-201
cdd_tot OP-52	lfalph M-547	pgleak2 M-736	svgsl M-212
cdg OP-40	lfn1 M-504	pgleak3 M-737	svgslp M-213
cds OP-42	lfn2 M-505	pgleak6 M-738	svgsw M-215
cgb OP-39	lfn3 M-506	pglkb1 M-741	svgswp M-214
cgbo M-289	lfvbs M-507	pglkb2 M-742	tcjbd M-267
cgbo OP-79	lgidl1 M-529	pglksd1 M-739	tcjbdsw M-268
cgd OP-37	lgidl2 M-530	pglksd2 M-740	tcjbdswg M-269
cgdo M-288	lgleak1 M-531	pibpc1 M-747	tcjbs M-270
cgdo OP-80	lgleak2 M-532	pibpc2 M-748	tcjbssw M-271
cgg OP-36	lgleak3 M-533	pjs0 M-725	tcjbsswg M-272
cgg_tot OP-53	lgleak6 M-534	pjs0d M-767	temp M-38
cgs OP-38	lglkb1 M-537	pjs0s M-772	temp OP-1
cgso M-287	lglkb2 M-538	pjs0sw M-726	tempeff O-1
cgso OP-78	lglksd1 M-535	pjs0swd M-768	tk OP-2
cisb M-281	lglksd2 M-536	pjs0sws M-773	tndep M-431
cisbd M-402	libpc1 M-543	pmuecb0 M-696	tndepv M-452
cisbk M-284	libpc2 M-544	pmuecb1 M-697	tnom M-18
cisbkd M-405	ljs0 M-521	pmueph1 M-698	tox M-41
cisbks M-426	ljs0d M-563	pmuesr1 M-701	tpoly M-45
cisbs M-423	ljs0s M-568	pmuesti1 M-717	trise I-8
cit M-247	ljs0sw M-522	pmuesti2 M-718	trise M-40
cj M-264	ljs0swd M-564	pmuesti3 M-719	type M-1
cjd M-392	ljs0sws M-569	pmuetmp M-702	vbd_max M-782
cjd OP-34	ll M-54	pndep M-694	vbdr_max M-789
cjs M-413	lld M-55	pnfalp M-744	vbi M-60
cjs OP-35	lln M-56	pnftrp M-743	vbisub M-303
cjsw M-265	lmax M-360	pninv M-695	vbox M-309
cjswd M-393	lmin M-361	pnj M-727	vbs OP-12
cjswg M-266	lmuecb0 M-492	pnjd M-769	vbs_max M-783
cjswgd M-394	lmuecb1 M-493	pnjs M-774	vbse OP-8
cjswgs M-415	lmueph1 M-494	pnover M-681	vbsmin M-323
cjsws M-414	lmuesr1 M-497	pnovers M-679	vbsr_max M-788
clm1 M-194	lmuesti1 M-513	pnpext M-752	vdb OP-15
clm2 M-195	lmuesti2 M-514	pnsti M-712	vdiffj M-279
clm3 M-196	lmuesti3 M-515	pnsubc M-684	vdiffjd M-407
clm5 M-197	lmuetmp M-498	pnsubp M-685	vdiffjs M-428
clm6 M-198	lndep M-490	pnsubpsti1 M-720	vds OP-10
coadov M-7	lnfalp M-540	pnsubpsti2 M-721	vds_max M-779
coclampc M-256	lnftrp M-539	pnsubpsti3 M-722	vdsat OP-19
coddlt M-295	lninv M-491	powrat M-354	vdse OP-6
codep M-429	lnj M-523	ppgd1 M-692	vdsti M-161
codfm M-24	lnjd M-565	ppgd3 M-693	version M-3
coerrrep M-778	lnjs M-570	ppowrat M-753	vfbc M-50
coflick M-13	lnover M-477	ppthrou M-745	vfbover M-292
cogidl M-9	lnovers M-475	prattemp1 M-115	vgb OP-14
cohbd M-463	lnpext M-548	prattemp2 M-116	vgb_max M-784
coign M-21	lnsti M-508	prd M-754	vgbr_max M-787
coiigs M-10	lnsubc M-480	prd22 M-755	vgd OP-13
coiprv M-5	lnsubp M-481	prd23 M-756	vgd_max M-780
coisti M-14	lnsubpsti1 M-516	prd24 M-757	vgdr_max M-785
coisub M-8	lnsubpsti2 M-517	prdict1 M-758	vgs OP-11
coldrift M-30	lnsubpsti3 M-518	prdov13 M-759	vgs_max M-781
compatible M-22	lod I-22	prdslp1 M-760	vgse OP-7
conqs M-15	lover I-28	prdvb M-761	vgsmin M-357
coovlp M-11	lover M-53	prdvd M-762	vgsr_max M-786
coovlps M-12	loverld I-30	prdvg11 M-763	vmax M-175
copprv M-6	loverld M-84	prs M-764	vmaxt1 M-105
coqovsm M-28	lovers I-29	prth0 M-765	vmaxt2 M-106
corbnet I-11	lovers M-85	ps I-5	vover M-176
corbnet M-20	lp M-51	ps M-36	voverp M-177
cordrift M-31	lpext M-63	ps0 OP-61	vovers M-178
corg I-17	lpgd1 M-488	psc1 M-689	voversp M-179
corg M-19	lpgd3 M-489	psc2 M-690	vth OP-18
corsrd M-4	lpowrat M-549	psc3 M-691	vthmod M-790
coselfheat I-16	lpthrou M-541	pscp1 M-686	vthsti M-146
coselfheat M-25	lrd M-550	pscp2 M-687	vtmp M-180
cosubnode I-15	lrd22 M-551	pscp3 M-688	vzadd0 M-257
cosubnode M-26	lrd23 M-552	pscsti1 M-714	w I-1
cosym M-27	lrd24 M-553	pscsti2 M-715	w M-32
cotemp M-29	lrdict1 M-554	psl OP-62	warn M-305
cothrml M-16	lrdov13 M-555	psub1 M-703	wbgtmp1 M-574
csb OP-47	lrdslp1 M-556	psub2 M-704	wbgtmp2 M-575
csd OP-45	lrdvb M-557	psvbs M-706	wbinn M-470
csg OP-44	lrdvd M-558	psvds M-705	wcgbo M-647
css OP-46	lrdvg11 M-559	psvgs M-707	wcgdo M-622
css_tot OP-54	lrs M-560	pt2 M-364	wcgso M-621
ctemp M-283	lrth0 M-561	pt4 M-369	wcisbk M-626
ctempd M-404	lsc1 M-485	pt4p M-370	wcisbkd M-668
ctemps M-425	lsc2 M-486	pthrou M-248	wcisbks M-673
cth0 M-325	lsc3 M-487	ptl M-362	wclm1 M-627
cvb M-282	lscp1 M-482	ptlp M-365	wclm2 M-628
cvbd M-403	lscp2 M-483	ptp M-363	wclm3 M-629
cvbk M-285	lscp3 M-484	pvdiffj M-746	wcvdsover M-648
cvbs M-424	lscsti1 M-510	pvdiffjd M-771	weff O-3
cvdsover M-353	lscsti2 M-511	pvdiffjs M-776	weg0 M-576
ddltict M-298	lsub1 M-499	pvfbc M-683	wfalph M-649
ddltmax M-296	lsub2 M-500	pvfbover M-680	wfc M-137
ddltslp M-297	lsvbs M-502	pvmax M-675	wfn1 M-606
ddrift M-302	lsvds M-501	pvover M-766	wfn2 M-607
depbb M-443	lsvgs M-503	pvthsti M-716	wfn3 M-608
depddlt M-455	lv9 OP-89	pvtmp M-699	wfvbs M-609
depeta M-437	lvdiffj M-542	pwfc M-732	wgidl1 M-631
depleak M-436	lvdiffjd M-567	pwl2 M-682	wgidl2 M-632
depmue0 M-432	lvdiffjs M-572	pwr OP-60	wgleak1 M-633
depmue0tmp M-458	lvfbc M-479	pwsti M-713	wgleak2 M-634
depmue1 M-433	lvfbover M-476	pwvth0 M-700	wgleak3 M-635
depmue2 M-453	lvmax M-471	pzadd0 M-258	wgleak6 M-636
depmue2tmp M-459	lvover M-562	qb OP-24	wglkb1 M-639
depmuea1 M-454	lvthsti M-512	qb_itr OP-28	wglkb2 M-640
depmueback0 M-434	lvtmp M-495	qd OP-25	wglksd1 M-637
depmueback1 M-435	lwfc M-528	qd_itr OP-29	wglksd2 M-638
depmueph0 M-441	lwl2 M-478	qdftvd M-326	wibpc1 M-645
depmueph1 M-442	lwsti M-509	qdp OP-32	wibpc2 M-646
depmuetmp M-445	lwvth0 M-496	qg OP-26	wjs0 M-623
depsubsl M-457	lx142 OP-90	qg_itr OP-30	wjs0d M-665
depvdsef1 M-439	lx4 OP-86	qme1 M-117	wjs0s M-670
depvdsef2 M-440	lx7 OP-87	qme2 M-118	wjs0sw M-624
depvfbc M-456	lx8 OP-88	qme3 M-119	wjs0swd M-666
depvgpsl M-460	m I-23	qovadd M-97	wjs0sws M-671
depvmax M-438	mbe0 M-313	qovjunc M-462	wl M-57
depvsatr M-461	mbewl M-312	qovsm M-337	wl1 M-188
depvtmp M-444	meff O-2	qs OP-27	wl1p M-189
divx M-286	minc M-255	qs_itr OP-31	wl2 M-190
divxd M-406	minr M-254	qsp OP-33	wl2p M-191
divxs M-427	mismatchdist M-320	rbpb I-12	wld M-58
dly1 M-249	mismatchmod M-315	rbpb M-67	wln M-59
dly2 M-250	mismatchvec1 M-316	rbpd I-13	wmax M-358
dly3 M-251	mismatchvec2 M-317	rbpd M-68	wmin M-359
dlyov M-252	mismatchvec3 M-318	rbps I-14	wmuecb0 M-594
dtemp I-7	mismatchvec4 M-319	rbps M-69	wmuecb1 M-595
dtemp M-39	mj M-273	rd M-49	wmueph1 M-596
dtsh OP-4	mjd M-395	rd20 M-329	wmuesr1 M-599
eg0 M-100	mjs M-416	rd21 M-330	wmuesti1 M-615
egig M-238	mjsw M-274	rd22 M-331	wmuesti2 M-616
falph M-245	mjswd M-396	rd22d M-332	wmuesti3 M-617
fn1 M-208	mjswg M-275	rd23 M-333	wmuetmp M-600
fn2 M-209	mjswgd M-397	rd23l M-342	wndep M-592
fn3 M-210	mjswgs M-418	rd23lp M-343	wnfalp M-642
fvbs M-211	mjsws M-417	rd23s M-344	wnftrp M-641
gbbs OP-69	mphdfm M-299	rd23sp M-345	wninv M-593
gbds OP-67	muecb0 M-162	rd24 M-334	wnj M-625
gbgs OP-68	muecb1 M-163	rd25 M-335	wnjd M-667
gbmin M-70	mueefb M-448	rd26 M-336	wnjs M-672
gdl M-366	mueph0 M-164	rdeff OP-82	wnover M-579
gdld M-368	mueph1 M-165	rdict1 M-81	wnovers M-577
gdlp M-367	muephl M-181	rdict2 M-83	wnpext M-650
gds OP-22	muephs M-192	rdov11 M-77	wnsti M-610
gdsleak M-777	muephw M-142	rdov12 M-78	wnsubc M-582
gidl1 M-239	mueplp M-182	rdov13 M-79	wnsubp M-583
gidl2 M-240	muepsp M-193	rdrbb M-98	wnsubpsti1 M-618
gidl3 M-241	muepwp M-143	rdrbbtmp M-99	wnsubpsti2 M-619
gidl4 M-242	mueslp M-185	rdrcar M-377	wnsubpsti3 M-620
gidl5 M-243	muesr0 M-167	rdrcx M-376	wpgd1 M-590
gleak1 M-225	muesr1 M-168	rdrdjunc M-375	wpgd3 M-591
gleak2 M-226	muesrl M-183	rdrdl1 M-378	wpowrat M-651
gleak3 M-227	muesrw M-184	rdrdl2 M-379	wpthrou M-643
gleak4 M-228	muesti1 M-147	rdrift OP-84	wrd M-652
gleak5 M-229	muesti2 M-148	rdrmue M-371	wrd22 M-653
gleak6 M-235	muesti3 M-149	rdrmuel M-384	wrd23 M-654
gleak7 M-236	mueswp M-145	rdrmuelp M-385	wrd24 M-655
glkb1 M-233	muetmp M-166	rdrmuetmp M-373	wrdict1 M-656
glkb2 M-234	mvt0 M-311	rdrqover M-386	wrdov13 M-657
glkb3 M-237	mvtwl M-310	rdrvmax M-372	wrdslp1 M-658
glksd1 M-230	mvtwl2 M-314	rdrvmaxl M-382	wrdvb M-659
glksd2 M-231	ndep M-169	rdrvmaxlp M-383	wrdvd M-660
glksd3 M-232	ndepl M-186	rdrvmaxw M-380	wrdvg11 M-661
glpart1 M-224	ndeplp M-187	rdrvmaxwp M-381	wrs M-662
gm OP-21	ndepm M-430	rdrvtmp M-374	wrth0 M-663
gmbs OP-23	nf I-21	rds M-346	wsc1 M-587
gmt OP-85	nfalp M-244	rdslp1 M-80	wsc2 M-588
hbda M-464	nftrp M-246	rdslp2 M-82	wsc3 M-589
hbdb M-465	ngcon I-18	rdsp M-347	wscp1 M-584
hbdc M-466	ninv M-170	rdtemp1 M-109	wscp2 M-585
hbdctmp M-467	ninvd M-171	rdtemp2 M-110	wscp3 M-586
hbdf M-468	ninvdt1 M-107	rdvb M-328	wscsti1 M-612
ibd OP-77	ninvdt2 M-108	rdvd M-327	wscsti2 M-613
ibpc1 M-220	ninvdw M-172	rdvdl M-338	wsti M-141
ibpc1l M-221	ninvdwp M-173	rdvdlp M-339	wstil M-153
ibpc1lp M-222	nj M-261	rdvds M-340	wstilp M-154
ibpc2 M-223	njd M-389	rdvdsp M-341	wstiw M-159
ibs OP-76	njs M-410	rdvdsub M-301	wstiwp M-160
ibulk OP-59	njsw M-262	rdvdtemp1 M-111	wsub1 M-601
id OP-56	njswd M-390	rdvdtemp2 M-112	wsub2 M-602
ids OP-9	njsws M-411	rdvg11 M-321	wsvbs M-604
idsacc OP-17	nover M-293	rdvg12 M-322	wsvds M-603
idsibpc OP-66	novers M-294	rdvsub M-300	wsvgs M-605
idsres OP-16	npext M-64	region I-38	wvdiffj M-644
ig OP-57	nqsc M-253	region OP-20	wvdiffjd M-669
igate OP-70	nrd I-10	reversed OP-5	wvdiffjs M-674
igateb OP-72	nrs I-9	rs M-48	wvfbc M-581
igated OP-73	nsti M-140	rsdrift OP-83	wvfbover M-578
igates OP-71	nsubc M-46	rseff OP-81	wvmax M-573
igidl OP-75	nsubcdfm I-36	rsh M-65	wvover M-664
igisl OP-74	nsubcw M-138	rshg M-66	wvth0 M-144
igtemp2 M-103	nsubcwp M-139	rth0 M-324	wvthsti M-614
igtemp3 M-104	nsubp M-47	rth0l M-450	wvtmp M-597
info M-17	nsubp0 M-61	rth0lp M-451	wwfc M-630
int_d O-6	nsubpsti1 M-150	rth0nf M-352	wwl2 M-580
int_s O-5	nsubpsti2 M-151	rth0r M-349	wwsti M-611
is OP-58	nsubpsti3 M-152	rth0w M-350	wwvth0 M-598
isbreak M-446	nsubsub M-304	rth0wp M-351	xgl I-20
isnoisy I-37	nsubwp M-62	rthtemp1 M-113	xgw I-19
isub OP-64	ovcap_update M-795	rthtemp2 M-114	xl M-71
isub_total OP-91	ovmag M-291	rwell M-447	xld M-42
isubld OP-65	ovslp M-290	sa I-33	xldld M-75
ivth M-791	parl2 M-125	saref M-157	xpdv M-94
ivth_vdsmin M-794	pb M-276	sb I-34	xpvdth M-95
ivthl M-793	pbd M-398	sbref M-158	xpvdthg M-96
ivthw M-792	pbgtmp1 M-676	sc1 M-126	xqy M-52
js0 M-259	pbgtmp2 M-677	sc2 M-127	xqy1 M-73
js0d M-387	pbs M-419	sc3 M-128	xqy2 M-74
js0s M-408	pbsw M-277	sc4 M-129	xti M-263
js0sw M-260	pbswd M-399	scp1 M-130	xti2 M-280
js0swd M-388	pbswg M-278	scp2 M-131	xti2d M-401
js0sws M-409	pbswgd M-400	scp21 M-134	xti2s M-422
kappa M-120	pbswgs M-421	scp22 M-133	xtid M-391
l I-2	pbsws M-420	scp3 M-132	xtis M-412
l M-33	pcgbo M-749	scsti1 M-155	xw M-72
lbgtmp1 M-472	pcgdo M-724	scsti2 M-156	xwd M-43
lbgtmp2 M-473	pcgso M-723	sd I-35	xwdc M-44
lbinn M-469	pcisbk M-728	shemax M-355	xwdld M-76
lcgbo M-545	pcisbkd M-770	shemaxdlt M-356
lcgdo M-520	pcisbks M-775	shetemp OP-3

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Spectre Circuit Simulator Components and Device Models ReferenceProduct Version 23.1, June 2023

Reference

Model Equations

Charge

Drain Current

Threshold Voltage Shift

Mobility Model

Channel-Length Modulation

Narrow-Channel Effects

Temperature Dependences

Resistances

Junction Capacitance at Drain side

Junction Capacitance at Drain side

Junction Current

Resistance

Capacitance

Intrinsic Capacitance

Overlap Capacitance

Leakage Currents

Substrate Current

Gate Current

GIDL (Gate-Induced Drain Leakage)

Source/Bulk and Drain/Bulk Diode Models

Between Drain and Bulk

Between Source and Bulk

Noise Models

1/f Noise Models

Thermal Noise Model

Induced Gate Noise Model

Coupling Noise Model

Non-Quasi-Static (NQS) Model

Formation of carrier

Delay Mechanisms

Self-Heating Effect Model

DFM Model

Component Statements

Instance Parameters

Model Definition

Model Parameters

Device type parameters

Default for instance parameters

Basic Device Parameters

Temperature dependence effects

Quantum Mechanical Effects

Poly Depletion Effects

Short Channel Effects

Narrow channel effects

Mobility Effects

Small size parameters

Channel Length Modulation Effects

Substrate Current Effects

Gate Current Effects

GIDL Current Effects

Noise 1/f Effects

Subthreshold swing parameters

NQS parameters

Symmetry for short-channel mosfet

P-N junctions parameters

Overlap capacitance parameters

Smoothing coefficient between linear and saturation

DFM parameters

Substrate model parameters

Operating region warning control parameters

Mismatch parameters

LDMOS special parameters

Auto Model Selector parameters

New Depletion Mode Parameters (since version 2.20)

New Hard BreakDown Voltage Parameters (since version 2.30)

Binning model parameters

Safe Operating Areas Parameters

Output Parameters

Operating-Point Parameters

Parameter Index

Spectre Circuit Simulator Components and Device Models Reference
Product Version 23.1, June 2023