Model Usage

Determination of the node sequence is:

Drain = 1, Gate = 2, Source = 3, Substrate = 4

If COBCNODE = 1 Body = 5, Thermal = 6

If COBCNODE = 0 Thermal = 5

The effective channel length L_Leff and width W_eff are calculated from the gate length L_gate and width W_gate, where L_gate, and W_gate are related to the drawn gate length L_drawn and width W_drawn as:

L_gate = Ldrawn

W_gate = Wdrawn/NF

L_eff = L_gate - 2 × XLD

W_eff = W_gate - 2 × XWD

W_effc = W_gate - 2 ·XWDC

where XLD and XWD account for the overlaps of source/drain contact and the gate oxide. The model parameter XWDCis introduced to describe the different width dependence of capacitances from currents. If the value is not given, the same value as XWD is taken. NF is the number of fingers.

Figure -3 Cross section of the device structure

Table -1 HiSIM SOI model parameters indicates parameters

NF	number of gate fingers
XLD	gate overlap length
LDRIFT	length of drift region (drain side)
LDRIFTS	length of drift region (source side)
XWD	gate overlap width
XWDC	different width dependence of capacitance from currents

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