Component Statements

Instance Parameters

1	`w (m)`	Gate width.
2	`l (m)`	Gate length.
3	`as (m^2)`	Area of the source junction.
4	`ad (m^2)`	Area of the drain junction.
5	`ps (m)`	Perimeter of the source junction.
6	`pd (m)`	Perimeter of the drain junction.
7	`temp (C)`	Device temperature.
8	`dtemp (K)`	Device temperature rise from ambient.
9	`nrs=1`	Number of squares of source diffusion.
10	`nrd=1`	Number of squares of drain diffusion.
11	`corbnet`	Substrate resistance network selector. Inactive in HiSIM_IGBT model.
12	`rbpb (Ohm)`	Substrate resistance network.
13	`rbpd (Ohm)`	Substrate resistance network.
14	`rbps (Ohm)`	Substrate resistance network.
15	`rbdb (Ohm)`	Substrate resistance network.
16	`rbsb (Ohm)`	Substrate resistance network.
17	`corg`	Gate-contact resistance selector. Inactive in HiSIM_IGBT model.
18	`ngcon=1.0`	Number of gate contacts.
19	`xgw=0.0 m`	Distance from gate contact to channel edge.
20	`xgl=0.0 m`	Offset of gate length due to variation in patterning.
21	`nf=1.0`	Number of gate fingers.
22	`lod=1.0e-5 m`	Length of diffusion between gate and STI.
23	`m=1`	Multiplicity factor (number of MOSFETs in parallel).
24	`subld1`	Parameter for impact-ionization current in the drift region.
25	`subld2 ((V^(3/2))/m)`	Parameter for impact-ionization current in the drift region.
26	`ldrift1 (m)`	Parameter for drift region length-1.
27	`ldrift2 (m)`	Parameter for drift region length-2.
28	`lover (m)`	Overlap length on the drain side.
29	`lovers (m)`	Overlap length on the source side.
30	`loverld (m)`	Overlap length on the drain side.
31	`ldrift1s (m)`	Parameter for drift region length-1 on the source side.
32	`ldrift2s (m)`	Parameter for drift region length-2 on the source side.
33	`sa=0.0 m`	Distance from STI edge to Gate edge.
34	`sb=0.0 m`	Distance from STI edge to Gate edge.
35	`sd=0.0 m`	Distance from Gate edge to Gate edge.
36	`nsubcdfm (cm^-3)`	Constant part of Nsub for DFM.
37	`isnoisy=yes`	Should device generate noise? Possible values are `yes` and `no`.

Model Parameters

Device type parameters

1	`type=n`	Transistor type. Possible values are n and p.
2	`version=1.00`	Model version 1.00. 1.00 is the latest version of HiSIM_IGBT.
3	`corsrd=0`	Contact resistances Rs and Rd selector. Inactive in HiSIM_IGBT model.
4	`coiprv=0`	Previous Ids is used for calculating source/drain resistance effect. Possible values are 0= no(default) and 1=yes..
5	`copprv=1`	Previous surface potential is used for the initial guess. Possible values are 0= no(default) and 1=yes.
6	`coadov=1`	Selector for lateral field induced and overlap charges/capacitances being added to intrinsic ones. Possible values are 0= no and 1=yes (default).
7	`coisub=0`	Substrate current selector. Inactive in HiSIM_IGBT model.
8	`cogidl=0`	GIDL current calculation selector. Inactive in HiSIM_IGBT model.
9	`coiigs=0`	Gate current calculation selector. Inactive in HiSIM_IGBT model.
10	`coovlp=1`	Overlap capacitance calculation selector on drain side. Possible values are 0= constant overlap capacitance(default) and 1= yes.
11	`coovlps=0`	Overlap capacitance calculation selector on source side. Possible values are 0= constant overlap capacitance(default) and 1= yes.
12	`coflick=0`	1/f noise calculation selector. Inactive in HiSIM_IGBT model.
13	`coisti=0`	STI leakage current calculation selector. Possible values are 0=no(default) and 1=yes.
14	`conqs=0`	Non-quasi-static mode selector. Inactive in HiSIM_IGBT model.
15	`cothrml=0`	Thermal noise calculation selector. Inactive in HiSIM_IGBT model.
16	`tnom (C)`	Parameters measurement temperature. Default set by `options'.
17	`corg=0`	Gate-contact resistance calculation selector. Inactive in HiSIM_IGBT model.
18	`corbnet=0`	Substrate resistance network selector. Inactive in HiSIM_IGBT model.
19	`coign=0`	Induced gate and cross correlation noise calculation selector. Inactive in HiSIM_IGBT model.
20	`compatible`	Compatible with spice3, default is spectre compatible. Possible values are spectre, and spice3.
21	`alarm=none`	Forbidden operating region. Possible values are none, off, triode, sat, subth, and rev.
22	`codfm=0`	Calculation of model for DFM selector.
23	`coselfheat=0`	Calculation of self-heating model.
24	`cosym=0`	Model selector for symmetry device.

Default for instance parameters

25	`w=5e-6 m`	Default gate width.
26	`l=2e-6 m`	Default gate length.
27	`as=0 m^2`	Default area of the source junction.
28	`ad=0 m^2`	Default area of the drain junction.
29	`ps=0 m`	Default perimeter of the source junction.
30	`pd=0 m`	Default perimeter of the drain junction.
31	`temp=27 C`	Default device temperature.
32	`dtemp=0 K`	Default device temperature rise from ambient.

Basic Device Parameters

33	`tox=1e-7 m`	Physical oxide thickness.
34	`xld=3e-8 m`	Gate-overlap length.
35	`xwd=0 m`	Gate-overlap width.
36	`tpoly=2.0e-7 m`	Height of the gate poly-si for fringing capacitance on the source side.
37	`nsubc=1.0e17 cm^-3`	Substrate-impurity concentration.
38	`nsubp=1.0e17 cm^-3`	Maximum pocket concentration.
39	`rs=0.0 Ohm*m`	Source contact resistance in LDD region.
40	`rd=5.0e-3 Ohm*m`	Drain contact resistance in LDD region.
41	`vfbc=-1.0 V`	Constant part of the flat-band voltage.
42	`lp=0.0 m`	Length of the pocket penetration into the channel.
43	`xqy=0.0 m`	Distance from channel/drain junction to maximum electric field point.
44	`lover=3.0e-8 m`	Overlap length on the source side.
45	`ll=0.0`	Gate length parameter.
46	`lld=0.0 m`	Gate length parameter.
47	`lln=0.0`	Gate length parameter.
48	`wl=0.0`	Gate width parameter.
49	`wld=0.0 m`	Gate width parameter.
50	`wln=0.0`	Gate width parameter.
51	`vbi=1.0 V`	Built-in potential.
52	`nsubp0=0.0 cm^-3`	Pocket implant parameter.
53	`nsubwp=1.0`	Pocket implant parameter.
54	`lpext=1.0E-50 m`	Pocket extension.
55	`npext=1.0e17 cm^-3`	Pocket extension.
56	`rsh=0.0 V/A*m`	Source/drain diffusion sheet resistance.
57	`rshg=0.0 V/A*m`	Gate-electrode sheet resistance.
58	`rbpb=50.0 Ohm`	Substrate resistance network.
59	`rbpd=50.0 Ohm`	Substrate resistance network.
60	`rbps=50.0 Ohm`	Substrate resistance network.
61	`rbdb=50.0 Ohm`	Substrate resistance network.
62	`rbsb=50.0 Ohm`	Substrate resistance network.
63	`gbmin=1.0e-12`	Minimum conductance for substrate resistance network.
64	`xl=0 m`	Gate length offset due to mask/etch effect.
65	`xw=0 m`	Gate width offset due to mask/etch effect.
66	`xqy1=0.0 F m^{XQY2}`	Vbs dependence of Qy.
67	`xqy2=2.0`	Lgate dependence of Qy.
68	`xldld=1.0e-6 m`	Lateral diffusion of Drain under the gate.
69	`rd2=0.0 Ohm*m`	Drain contact resistance in LDD region.
70	`rd3=0.0 Ohm*m`	Drain contact resistance in LDD region.
71	`rdov11=0.0`	Dependence coeff. for overlap length.
72	`rdov12=1.0`	Dependence coeff. for overlap length.
73	`rdov13=1.0`	Dependence coeff. for overlap length.
74	`rdslp1=0.0`	LDRIFT1 dependence of resistance for CORSRD=1,3.
75	`rdict1=1.0`	LDRIFT1 dependence of resistance for CORSRD=1,3.
76	`rdslp2=1.0`	LDRIFT2 dependence of resistance for CORSRD=1,3.
77	`rdict2=0.0`	LDRIFT2 dependence of resistance for CORSRD=1,3.
78	`loverld=1.0e-6 m`	Overlap length on the drain side.
79	`lovers=3.0e-8 m`	Overlap length on the source side.
80	`ldrift1=1.0e-6 m`	Drift region length-1 on the drain side.
81	`ldrift1s=0.0 m`	Drift region length-1 on the source side.
82	`ldrift2=1.0e-6 m`	Drift region length-2 on the drain side.
83	`ldrift2s=1.0e-6 m`	Drift region length-2 on the source side.
84	`subld1=0.0`	Impact-ionization current in the drift region.
85	`subld2=0.0 (V^(3/2))/m`	Impact-ionization current in the drift region.

Temperature dependence effects

86	`eg0=1.1785 eV`	Constant bandgap.
87	`bgtmp1=9.025e-5 eV/K`	First order temperature coefficient for band gap.
88	`bgtmp2=1.0e-7 eV/K^2`	Second order temperature coefficient for band gap.
89	`rdtemp1=0.0 1/K`	Temperature-dependence of Rd.
90	`rdtemp2=0.0 1/K^2`	Temperature-dependence of Rd.
91	`rdvdtemp1=0.0 1/K`	Temperature-dependence of RDVD.
92	`rdvdtemp2=0.0 1/K^2`	Temperature-dependence of RDVD.

Quantum Mechanical Effects

93	`qme1=0.0 m/V^2`	Coefficient for quantum mechanical effect.
94	`qme2=1.0 V`	Coefficient for quantum mechanical effect.
95	`qme3=0.0 m`	Coefficient for quantum mechanical effect.
96	`kappa=3.9`	Dielectric constant for high-k stacked gate.

Poly Depletion Effects

97	`pgd1=0.0 V`	Strength of poly depletion.
98	`pgd2=1.0 V`	Threshold voltage of poly depletion.
99	`pgd3=0.8`	Vds dependence of poly depletion.
100	`pgd4=0.0`	Parameter for gate-poly depletion.

Short Channel Effects

101	`parl2=1.0e-8 m`	Depletion width of channel/contact junction.
102	`sc1=1.0 1/V`	Short-channel coefficient 1.
103	`sc2=1.0 1/V^2`	Short-channel coefficient 2.
104	`sc2b=0.0 1/V^3`	Short-channel coefficient 2 Vb dependency coefficient.
105	`sc3=0.0 m/V^2`	Short-channel coefficient 3.
106	`sc4=0.0 1/V`	Parameter for SCE.
107	`scp1=1.0 1/V`	Short-channel coefficient 1 for pocket.
108	`scp2=0.1 1/V^2`	Short-channel coefficient 2 for pocket.
109	`scp3=0.0 m/V^2`	Short-channel coefficient 3 for pocket.
110	`scp22=0.0 V^4`	Short-channel-effect modification for small Vds.
111	`scp21=0.0 V`	Short-channel-effect modification for small Vds.
112	`bs1=0.0 V^2`	Body-coefficient modification by impurity profile.
113	`bs2=0.9 V`	Body-coefficient modification by impurity profile.

Narrow channel effects

114	`wfc=0.0 m*F/cm^2`	Threshold voltage reduction.
115	`nsubcw=0.0`	Parameter for narrow channel effect.
116	`nsubcwp=1.0`	Parameter for narrow channel effect.
117	`mueph2=0.0`	Mobility reduction.
118	`w0=0.0 log(cm)`	Minimum gate width.
119	`wvthsc=0.0`	Short-channel effect at the STI edge.
120	`nsti=1.0e17 cm^-3`	Substrate-impurity concentration at the SIT edge.
121	`wsti=0.0 m`	Width of the high-field region at STI.
122	`muephw=0.0`	Phonon scattering parameter.
123	`muepwp=1.0`	Phonon scattering parameter.
124	`wvth0=0.0`	Threshold voltage shift.
125	`mueswp=1.0`	Change of surface roughness related mobility.
126	`vthsti=0.0`	Parameter for STI.
127	`muesti1=0.0`	STI Stress mobility parameter.
128	`muesti2=0.0`	STI Stress mobility parameter.
129	`muesti3=1.0`	STI Stress mobility parameter.
130	`nsubpsti1=0.0 m`	STI Stress pocket implant parameter.
131	`nsubpsti2=0.0 m`	STI Stress pocket implant parameter.
132	`nsubpsti3=1.0 m`	STI Stress pocket implant parameter.
133	`wstil=0.0`	Parameter for STI.
134	`wstilp=1.0`	Parameter for STI.
135	`scsti1=0.0`	Parameter for STI.
136	`scsti2=0.0 1/V`	Parameter for STI.
137	`scsti3=0.0 m/V`	Parameter for STI.
138	`saref=1e-6 m`	Reference distance from STI edge to Gate edge.
139	`sbref=1e-6 m`	Reference distance from STI edge to Gate edge.
140	`wstiw=0.0`	Parameter for STI.
141	`wstiwp=1.0`	Parameter for STI.
142	`vdsti=0.0`	parameter for STI.

Mobility Effects

143	`vds0=0.05 V`	Drain voltage for extracting the low-field mobility.
144	`muecb0=1.0e3 cm^2/(V*s)`	Coulomb scattering.
145	`muecb1=1.0e2 cm^2/(V*s)`	Coulomb scattering.
146	`mueph0=0.3 cm^2(V/cm)^(Muesr1)/(Vs)`	Phonon scattering.
147	`mueph1=2.5e4`	Phonon scattering.
148	`muetmp=1.7`	Temperature dependence of phonon scattering.
149	`muesr0=2.0 cm^2(V/cm)^(Muesr1)/(Vs)`
		Surface roughness scattering.
150	`muesr1=1.0e16`	Surface roughness scattering.
151	`ndep=1.0`	Coefficient of effective electric field.
152	`ninv=0.5`	Coefficient of effective electric field.
153	`ninvd=0.0 1/V`	Modification of Vdse dependence on Eeff.
154	`bb=2.0`	High-field mobility degradation.
155	`vmax=1.0e7 cm/s`	Maximum of electron saturation velocity.
156	`vover=0.3 cm^(voverp)`	Parameter for velocity overshoot.
157	`voverp=0.3`	Lgate dependence of velocity overshoot.
158	`vovers=0.0`	Parameter for overshoot.
159	`voversp=0.0`	Parameter for overshoot.
160	`vtmp=0.0 cm/s`	Temperature dependence of the saturation velocity.
161	`muephl=0.0`	Phonon scattering parameter.
162	`mueplp=1.0`	Phonon scattering parameter.
163	`muesrl=0.0`	Surface roughness parameter.
164	`muesrw=0.0`	Change of surface roughness related mobility.
165	`mueslp=1.0`	Surface roughness parameter.
166	`ndepl=0.0`	Modification of Qb contribution for short-channel case.
167	`ndeplp=1.0`	Modification of Qb contribution for short-channel case.

Small size parameters

168	`wl1=0.0`	Threshold voltage shift of STI leakage due to small size effect.
169	`wl1p=1.0`	Threshold voltage shift of STI leakage due to small size effect.
170	`wl2=0.0`	Threshold voltage shift due to small size effect.
171	`wl2p=1.0`	Threshold voltage shift due to small size effect.
172	`muephs=0.0`	Mobility modification due to small size.
173	`muepsp=1.0`	Mobility modification due to small size.

Channel Length Modulation Effects

174	`clm1=50e-3`	First parameter for CLM.
175	`clm2=2.0 1/m`	Second parameter for CLM.
176	`clm3=1.0`	Third parameter for CLM.
177	`clm4=5.0e-4`	Smoothing coefficient for gds.
178	`clm5=1.0`	Effect of pocket implantation.
179	`clm6=0.0`	Effect of pocket implantation.

Substrate Current Effects

180	`sub1=50e-3 1/V`	First parameter for Isub.
181	`sub2=1.0e2 V`	Second parameter for Isub.
182	`svgs=0.8`	Substrate current dependence on Vgs.
183	`svbs=0.5`	Substrate current dependence on Vbs.
184	`svbsl=0.0`	Lgate dependence of SVBS.
185	`svds=0.8`	Substrate current dependence on Vds.
186	`slg=3.0e-8`	Substrate current dependence on Lgate.
187	`sub1l=2.5e-3`	Lgate dependence of SUB1.
188	`sub2l=2.0e-6`	Lgate dependence of SUB2.
189	`fn1=50.0`	Coefficient of Fowler-Nordheim-current contribution.
190	`fn2=1.7e-4`	Coefficient of Fowler-Nordheim-current contribution.
191	`fn3=0.0`	Coefficient of Fowler-Nordheim-current contribution.
192	`fvbs=1.2e-2`	Modification of Vbs dependence.
193	`svgsl=0.0`	Lgate dependence of SVGS.
194	`svgslp=1.0`	Lgate dependence of SVGS.
195	`svgswp=1.0`	Wgate dependence of SVGS.
196	`svgsw=0.0`	Wgate dependence of SVGS.
197	`svbslp=1.0`	Lgate dependence of SVBS.
198	`slgl=0.0`	Substrate current dependence on Lgate.
199	`slglp=1.0`	Substrate current dependence on Lgate.
200	`sub1lp=1.0`	Lgate dependence of SUB1.
201	`ibpc1=0.0`	Impact-ionization induced bulk potential change.
202	`ibpc2=0.0`	Impact-ionization induced bulk potential change.

Gate Current Effects

203	`glpart1=0.5`	Partitioning of gate current.
204	`gleak1=50.0 A/(V^(3/2)*c^(1/2))`	First gate current coefficient.
205	`gleak2=1.0e7 1/(V^(1/2)c^(3/2)m)`	Second gate current coefficient.
206	`gleak3=6.0e-2`	Third gate current coefficient.
207	`gleak4=4.0`	Parameter for gate current.
208	`gleak5=7.5e3`	Parameter for gate current.
209	`glksd1=1.0e-15`	Parameter for gate current.
210	`glksd2=5e6`	Parameter for gate current.
211	`glksd3=-5e6`	Parameter for gate current.
212	`glkb0=0.0 V`	Parameter for gate current.
213	`glkb1=5.0e-16`	Parameter for gate current.
214	`glkb2=1.0`	Parameter for gate current.
215	`igtemp1=0.0`	Temperature dependence of gate current.
216	`igtemp2=0.0 1/K`	Temperature dependence of gate current.
217	`igtemp3=0.0 1/K^2`	Temperature dependence of gate current.
218	`gleak6=0.25 V`	Parameter for gate current.
219	`gleak7=1.0e-6 m^2`	Parameter for gate current.
220	`glkb3=0.0 V`	Parameter for gate current.
221	`egig=0.0 V`	Parameter for gate current.

GIDL Current Effects

222	`gidl1=2.0 Am/(V^(3/2)c^(1/2))`
		First parameter for GIDL.
223	`gidl2=3.0E7 1/(V^(1/2)c^(3/2)m)`
		Second parameter for GIDL.
224	`gidl3=0.9`	Third parameter for GIDL.
225	`gidl4=0.9`	Parameter for GIDL.
226	`gidl5=0.2`	Parameter for GIDL.

Noise 1/f Effects

227	`nfalp=1.0e-19`	Flicker (1/f) noise contribution of the mobility fluctuation.
228	`falph=1.0`	Parameter for 1/f noise.
229	`nftrp=1.0e10`	Flicker (1/f) noise ratio of trap density to attenuation coefficient.
230	`cit=0.0`	Flicker (1/f) noise interface trapped carriers capacitance.

Subthreshold swing parameters

231	`pthrou=0.0`	Modify subthreshold slope.
232	`pthroub=0.0 1/V`	Modify subthreshold slope.

NQS parameters

233	`dly1=1.0e-10`	Parameter for transit time.
234	`dly2=0.7`	Parameter for transit time.
235	`dly3=8.0e-7 Ohm`	Parameter for transforming bulk charge.
236	`dlyov=0.0 Ohm`	Parameter for transforming overlap charge.

Symmetry for short-channel mosfet

237	`vzadd0=1.0e-2 V`	Vzadd at Vds=0.
238	`pzadd0=5.0e-3 V`	Pzadd at Vds=0.

P-N junctions parameters

239	`js0=5.0e-7 A/m^2 J`	unction saturation current density.
240	`js0sw=0.0 A/m`	Side-wall saturation current density.
241	`nj=1.0`	Junction emission coefficient.
242	`njsw=1.0`	Junction emission coefficient (sidewall).
243	`xti=2.0`	Junction saturation current temperature exponent coefficient.
244	`cj=5.0e-4 F/m^2`	Bottom junction capacitance per unit area at zero bias.
245	`cjsw=5e-10 F/m`	Source/drain sidewall junction capacitance per unit length at zero bias.
246	`cjswg=5e-10 F/m`	Source/drain sidewall junction capacitance grading coefficient per unit length at zero bias.
247	`tcjbd=0.0`	Temperature dependence of czbd.
248	`tcjbdsw=0.0`	Temperature dependence of czbdsw.
249	`tcjbdswg=0.0`	Temperature dependence of czbdswg.
250	`tcjbs=0.0`	Temperature dependence of czbs.
251	`tcjbssw=0.0`	Temperature dependence of czbssw.
252	`tcjbsswg=0.0`	Temperature dependence of czbsswg.
253	`mj=0.5`	Bulk junction bottom grading coefficient.
254	`mjsw=0.33`	Source/drain sidewall junction capacitance grading coefficient.
255	`mjswg=0.33`	Bottom junction capacitance grading coefficient.
256	`pb=1.0 V`	Bottom junction build-in potential.
257	`pbsw=1.0 V`	Source/drain sidewall junction build-in potential.
258	`pbswg=1.0 V`	Source/drain gate sidewall junction build-in potential.
259	`vdiffj=6.0e-4 V`	Threshold voltage for S/D junction diode.
260	`xti2=0.0`	Temperature coefficient.
261	`cisb=0.0`	Reverse bias saturation current.
262	`cvb=0.0`	Bias dependence coefficient of cisb.
263	`ctemp=0.0`	Temperature coefficient.
264	`cisbk=0.0 A`	Reverse bias saturation current.
265	`cvbk=0.0`	Bias dependence coefficient of cisb.
266	`divx=0.0 1/V`	Parameter for junction.

Overlap capacitance parameters

267	`cgso=0.0 F/m`	Gate-source overlap capacitance.
268	`cgdo=0.0 F/m`	Gate-source overlap capacitance.
269	`cgbo=0.0 F/m`	Gate-source overlap capacitance.
270	`ovslp=2.0e-8`	Parameter for overlap capacitance.
271	`ovmag=500.0`	Parameter for overlap capacitance.
272	`vfbover=-0.5 V`	Flat-band voltage in overlap region.
273	`nover=1.0e14 cm^-3`	Impurity concentration in overlap region.
274	`novers=0.0 cm^-3`	Impurity concentration in overlap region.

Smoothing coefficient between linear and saturation

275	`ddltmax=1.0`	Coefficient of effective electric field.
276	`ddltslp=0.0`	Lgate dependence of smoothing coefficient.
277	`ddltict=10.0`	Lgate dependence of smoothing coefficient.

DFM parameters

278

mphdfm=-0.3

NSUBCDFM dependence of phonon scattering for DFM.

Operating region warning control parameters

279	`warn=off`	Parameter to turn warnings on and off. Possible values are off and on.
280	`bvd (V)`	Drain diode breakdown voltage.
281	`bvs (V)`	Source diode breakdown voltage.
282	`bvj (V)`	Junction reverse breakdown voltage, take effect when bvd and bvs not given.
283	`vbox=3e9*tox V`	Oxide breakdown voltage.

Mismatch parameters

284	`mvtwl=0.0 V*m`	Threshold mismatch area dependence.
285	`mvt0=0.0 V`	Threshold mismatch intercept.
286	`mbewl=0.0 m`	Beta mismatch area dependence.
287	`mbe0=0.0`	Beta mismatch intercept.
288	`mvtwl2=0.0 V*m^1.5`	Threshold mismatch area square dependence.
289	`mismatchmod=0`	Mismatch mode selector. The available modes are 0, 1, 2 and 3.
290	`mismatchdist=0 m`	Mismatch Distance.

LDMOS special parameters

291	`rdvg11=0.0`	Vgs dependence of RD.
292	`rdvg12=1.0e2`	Vgs dependence of RD.
293	`vbsmin=-10.5 V`	Minimum back bias voltage to be treated in hsmigbteval.
294	`rth0=0.1 Kcm/W`	Thermal resistance.
295	`cth0=1.0e-7 Ws/Kcm`	Thermal capacitance.
296	`qdftvd=1.0`	Qdrift Vd dependence.
297	`rdvd=7.0e-2`	Vds dependence of RD.
298	`rdvb=0.0`	Vbs dependence of RD.
299	`rd20=0.0`	RD23 boundary.
300	`rd21=1.0`	Vds dependence of RD.
301	`rd22=0.0`	Vbs dependence of RD.
302	`rd22d=0.0`	Vbs dependence of RD.
303	`rd23=5e-3`	Modification of RD.
304	`rd24=0.0`	Vgs dependence of RD.
305	`rd25=0.0`	Vgs dependence of RD.
306	`rd26=0.2`	Smoothing Qover at depletion/inversion transition.
307	`qovsm=0.2`	Smoothing Qover at depletion/inversion transition.
308	`rdvdl=0.0`	Lgate dependence of RD.
309	`rdvdlp=1.0`	Lgate dependence of RD.
310	`rdvds=0.0`	Small size dependence of RD.
311	`rdvdsp=1.0`	Small size dependence of RD.
312	`rd23l=0.0`	Lgate dependence of RD21 boundary.
313	`rd23lp=1.0`	Lgate dependence of RD21 boundary.
314	`rd23s=0.0`	Small size dependence of RD21.
315	`rd23sp=1.0`	Small size dependence of RD21.
316	`rds=0.0`	Small size dependence of RD.
317	`rdsp=1.0`	Small size dependence of RD.
318	`ldrift=1.0e-6`	Length of drift region.
319	`rth0r=0.0`	Heat radiation for SHE.
320	`rth0w=0.0`	Width-dependence of RTH0.
321	`rth0wp=1.0`	Width-dependence of RTH0.
322	`rth0nf=0.0`	Nf-dependence of RTH0.
323	`cvdsover=0.0`	Modification of the Cgg spikes for Vds is not zero.
324	`powrat=1.0`	Thermal dissipation.

Parameters for bjt part

325	`bjtninj=0`	Electron injection into the depletion layer.
326	`bjtninjmax=1.0`	Parameter for Wdep.
327	`bjtwdepmax=1.0`	Parameter for Wdep.
328	`bjtmuep=50.0 cm^2/(V*s)`
		Hole mobility in the quasi-neutral region.
329	`bjtmuen=100.0 cm^2/(V*s)`
		Electron mobility in the quasi-neutral region.
330	`bjtmueqn=1.0`	Parameter for mobility.
331	`bjttaue=3.0e-5 s`	Basic lifetime in the emitter.
332	`bjttaub=1.0e-5 s`	Basic lifetime in the base.
333	`bjttauc=3.0e-5 s`	Basic lifetime in the collector.
334	`bjtnref=1.0e17 cm^-3`	Reference doping concentration.
335	`bjtgminc=0`	Coefficient for minimum conductance.
336	`bjtgmine=0`	Coefficient for minimum conductance.
337	`bjtldec=1.0`	Parameter for excess carrier distribution.
338	`bjtpmin=1.0e14 cm^-3`	Minimum carrier density in the base.
339	`bjtrb=1.0`	Coefficient for base resistance.
340	`bjtrbvg11=0`	Gate-voltage dependence on RBase.
341	`bjtrbvg12=20.0 V`	Gate-voltage dependence on RBase.
342	`bjtrc=1.0e4 Ohm*m`	Collector resistance.
343	`bjtre=0 Ohm*m`	Emitter resistance.
344	`bjtqdep=1.0`	Coefficient for Qdep.
345	`bjtqex=1.0`	Coefficient for Qexcess.
346	`bjtne=1.0e17 cm^-3`	Emitter impurity concentration.
347	`bjtnb=1.0e14 cm^-3`	Base impurity concentration.
348	`bjtnc=1.0e18 cm^-3`	Base impurity concentration.
349	`bjtwb=1.0e-4 m`	Base width.
350	`bjtwhalfcell=2.0e-6 m`	Half cell width.

Auto Model Selector parameters

351	`wmax=1 m`	Maximum channel width for which the model is valid.
352	`wmin=0 m`	Minimum channel width for which the model is valid.
353	`lmax=1 m`	Maximum channel length for which the model is valid.
354	`lmin=0 m`	Minimum channel length for which the model is valid.

Safe Operating Areas Parameters

355	`vds_max=infinity V`	Maximum allowed voltage cross source and drain.
356	`vgd_max=infinity V`	Maximum allowed voltage cross drain and gate.
357	`vgs_max=infinity V`	Maximum allowed voltage cross source/bulk and gate.
358	`vbd_max=infinity V`	Maximum allowed voltage cross drain/source and bulk.

Binning model parameters

359	`lbinn=1.0`	L modulation coefficient for binning.
360	`wbinn=1.0`	W modulation coefficient for binning.
361	`lvmax=0.0 cm/s`	Length dependence of vmax.
362	`lbgtmp1=0.0 eV/K`	Length dependence of bgtmp1.
363	`lbgtmp2=0.0 eV/K^2`	Length dependence of bgtmp2.
364	`leg0=0.0 eV`	Length dependence of eg0.
365	`lnovers=0.0 cm^-3`	Length dependence of novers.
366	`lvfbover=0.0 V`	Length dependence of vfbover.
367	`lnover=0.0 cm^-3`	Length dependence of nover.
368	`lwl2=0.0`	Length dependence of wl2.
369	`lvfbc=0.0 V`	Length dependence of vfbc.
370	`lnsubc=0.0 cm^-3`	Length dependence of nsubc.
371	`lnsubp=0.0 cm^-3`	Length dependence of nsubp.
372	`lscp1=0.0 1/V`	Length dependence of scp1.
373	`lscp2=0.0 1/V^2`	Length dependence of scp2.
374	`lscp3=0.0 m/V^2`	Length dependence of scp3.
375	`lsc1=0.0 1/V`	Length dependence of sc1.
376	`lsc2=0.0 1/V^2`	Length dependence of sc2.
377	`lsc3=0.0 m/V^2`	Length dependence of sc3.
378	`lpgd1=0.0 V`	Length dependence of pgd1.
379	`lpgd3=0.0`	Length dependence of pgd3.
380	`lndep=0.0`	Length dependence of ndep.
381	`lninv=0.0`	Length dependence of ninv.
382	`lmuecb0=0.0 cm^2/(V*s)`
		Length dependence of muecb0.
383	`lmuecb1=0.0 cm^2/(V*s)`
		Length dependence of muecb1.
384	`lmueph1=0.0`	Length dependence of mueph1.
385	`lvtmp=0.0 cm/s`	Length dependence of vtmp.
386	`lwvth0=0.0`	Length dependence of wvth0.
387	`lmuesr1=0.0`	Length dependence of muesr1.
388	`lmuetmp=0.0`	Length dependence of muetmp.
389	`lsub1=0.0 1/V`	Length dependence of sub1.
390	`lsub2=0.0 V`	Length dependence of sub2.
391	`lsvds=0.0`	Length dependence of svds.
392	`lsvbs=0.0`	Length dependence of svbs.
393	`lsvgs=0.0`	Length dependence of svgs.
394	`lfn1=0.0`	Length dependence of fn1.
395	`lfn2=0.0`	Length dependence of fn2.
396	`lfn3=0.0`	Length dependence of fn3.
397	`lfvbs=0.0`	Length dependence of fvbs.
398	`lnsti=0.0 cm^-3`	Length dependence of nsti.
399	`lwsti=0.0 m`	Length dependence of wsti.
400	`lscsti1=0.0`	Length dependence of scsti1.
401	`lscsti2=0.0 1/V`	Length dependence of scsti2.
402	`lvthsti=0.0`	Length dependence of vthsti.
403	`lmuesti1=0.0`	Length dependence of muesti1.
404	`lmuesti2=0.0`	Length dependence of muesti2.
405	`lmuesti3=0.0`	Length dependence of muesti3.
406	`lnsubpsti1=0.0 m`	Length dependence of nsubpsti1.
407	`lnsubpsti2=0.0 m`	Length dependence of nsubpsti2.
408	`lnsubpsti3=0.0 m`	Length dependence of nsubpsti3.
409	`lcgso=0.0 F/m`	Length dependence of cgso.
410	`lcgdo=0.0 F/m`	Length dependence of cgdo.
411	`ljs0=0.0 A/m^2`	Length dependence of js0.
412	`ljs0sw=0.0 A/m`	Length dependence of js0sw.
413	`lnj=0.0`	Length dependence of nj.
414	`lcisbk=0.0 A`	Length dependence of cisbk.
415	`lclm1=0.0`	Length dependence of clm1.
416	`lclm2=0.0 1/m`	Length dependence of clm2.
417	`lclm3=0.0`	Length dependence of clm3.
418	`lwfc=0.0 m*F/cm^2`	Length dependence of wfc.
419	`lgidl1=0.0 Am/(V^(3/2)c^(1/2))`
		Length dependence of gidl1.
420	`lgidl2=0.0 1/(V^(1/2)c^(3/2)m)`
		Length dependence of gidl2.
421	`lgleak1=0.0 A/(V^(3/2)*c^(1/2))`
		Length dependence of gleak1.
422	`lgleak2=0.0 1/(V^(1/2)c^(3/2)m)`
		Length dependence of gleak2.
423	`lgleak3=0.0`	Length dependence of gleak3.
424	`lgleak6=0.0 V`	Length dependence of gleak6.
425	`lglksd1=0.0`	Length dependence of glksd1.
426	`lglksd2=0.0`	Length dependence of glksd2.
427	`lglkb1=0.0`	Length dependence of glkb1.
428	`lglkb2=0.0`	Length dependence of glkb2.
429	`lnftrp=0.0`	Length dependence of nftrp.
430	`lnfalp=0.0`	Length dependence of nfalp.
431	`lpthrou=0.0`	Length dependence of pthrou.
432	`lvdiffj=0.0 V`	Length dependence of vdiffj.
433	`libpc1=0.0`	Length dependence of ibpc1.
434	`libpc2=0.0`	Length dependence of ibpc2.
435	`wvmax=0.0 cm/s`	Width dependence of vmax.
436	`wbgtmp1=0.0 eV/K`	Width dependence of bgtmp1.
437	`wbgtmp2=0.0 eV/K^2`	Width dependence of bgtmp2.
438	`weg0=0.0 eV`	Width dependence of eg0.
439	`wnovers=0.0 cm^-3`	Width dependence of novers.
440	`wvfbover=0.0 V`	Width dependence of vfbover.
441	`wnover=0.0 cm^-3`	Width dependence of nover.
442	`wwl2=0.0`	Width dependence of wl2.
443	`wvfbc=0.0 V`	Width dependence of vfbc.
444	`wnsubc=0.0 cm^-3`	Width dependence of nsubc.
445	`wnsubp=0.0 cm^-3`	Width dependence of nsubp.
446	`wscp1=0.0 1/V`	Width dependence of scp1.
447	`wscp2=0.0 1/V^2`	Width dependence of scp2.
448	`wscp3=0.0 m/V^2`	Width dependence of scp3.
449	`wsc1=0.0 1/V`	Width dependence of sc1.
450	`wsc2=0.0 1/V^2`	Width dependence of sc2.
451	`wsc3=0.0 m/V^2`	Width dependence of sc3.
452	`wpgd1=0.0 V`	Width dependence of pgd1.
453	`wpgd3=0.0`	Width dependence of pgd3.
454	`wndep=0.0`	Width dependence of ndep.
455	`wninv=0.0`	Width dependence of ninv.
456	`wmuecb0=0.0 cm^2/(V*s)`
		Width dependence of muecb0.
457	`wmuecb1=0.0 cm^2/(V*s)`
		Width dependence of muecb1.
458	`wmueph1=0.0`	Width dependence of mueph1.
459	`wvtmp=0.0 cm/s`	Width dependence of vtmp.
460	`wwvth0=0.0`	Width dependence of wvth0.
461	`wmuesr1=0.0`	Width dependence of muesr1.
462	`wmuetmp=0.0`	Width dependence of muetmp.
463	`wsub1=0.0 1/V`	Width dependence of sub1.
464	`wsub2=0.0 V`	Width dependence of sub2.
465	`wsvds=0.0`	Width dependence of svds.
466	`wsvbs=0.0`	Width dependence of svbs.
467	`wsvgs=0.0`	Width dependence of svgs.
468	`wfn1=0.0`	Width dependence of fn1.
469	`wfn2=0.0`	Width dependence of fn2.
470	`wfn3=0.0`	Width dependence of fn3.
471	`wfvbs=0.0`	Width dependence of fvbs.
472	`wnsti=0.0 cm^-3`	Width dependence of nsti.
473	`wwsti=0.0 m`	Width dependence of wsti.
474	`wscsti1=0.0`	Width dependence of scsti1.
475	`wscsti2=0.0 1/V`	Width dependence of scsti2.
476	`wvthsti=0.0`	Width dependence of vthsti.
477	`wmuesti1=0.0`	Width dependence of muesti1.
478	`wmuesti2=0.0`	Width dependence of muesti2.
479	`wmuesti3=0.0`	Width dependence of muesti3.
480	`wnsubpsti1=0.0 m`	Width dependence of nsubpsti1.
481	`wnsubpsti2=0.0 m`	Width dependence of nsubpsti2.
482	`wnsubpsti3=0.0 m`	Width dependence of nsubpsti3.
483	`wcgso=0.0 F/m`	Width dependence of cgso.
484	`wcgdo=0.0 F/m`	Width dependence of cgdo.
485	`wjs0=0.0 A/m^2`	Width dependence of js0.
486	`wjs0sw=0.0 A/m`	Width dependence of js0sw.
487	`wnj=0.0`	Width dependence of nj.
488	`wcisbk=0.0 A`	Width dependence of cisbk.
489	`wclm1=0.0`	Width dependence of clm1.
490	`wclm2=0.0 1/m`	Width dependence of clm2.
491	`wclm3=0.0`	Width dependence of clm3.
492	`wwfc=0.0 m*F/cm^2`	Width dependence of wfc.
493	`wgidl1=0.0 Am/(V^(3/2)c^(1/2))`
		Width dependence of gidl1.
494	`wgidl2=0.0 1/(V^(1/2)c^(3/2)m)`
		Width dependence of gidl2.
495	`wgleak1=0.0 A/(V^(3/2)*c^(1/2))`
		Width dependence of gleak1.
496	`wgleak2=0.0 1/(V^(1/2)c^(3/2)m)`
		Width dependence of gleak2.
497	`wgleak3=0.0`	Width dependence of gleak3.
498	`wgleak6=0.0 V`	Width dependence of gleak6.
499	`wglksd1=0.0`	Width dependence of glksd1.
500	`wglksd2=0.0`	Width dependence of glksd2.
501	`wglkb1=0.0`	Width dependence of glkb1.
502	`wglkb2=0.0`	Width dependence of glkb2.
503	`wnftrp=0.0`	Width dependence of nftrp.
504	`wnfalp=0.0`	Width dependence of nfalp.
505	`wpthrou=0.0`	Width dependence of pthrou.
506	`wvdiffj=0.0 V`	Width dependence of vdiffj.
507	`wibpc1=0.0`	Width dependence of ibpc1.
508	`wibpc2=0.0`	Width dependence of ibpc2.
509	`pvmax=0.0 cm/s`	Cross-term dependence of vmax.
510	`pbgtmp1=0.0 eV/K`	Cross-term dependence of bgtmp1.
511	`pbgtmp2=0.0 eV/K^2`	Cross-term dependence of bgtmp2.
512	`peg0=0.0 eV`	Cross-term dependence of eg0.
513	`pnovers=0.0 cm^-3`	Cross-term dependence of novers.
514	`pvfbover=0.0 V`	Cross-term dependence of vfbover.
515	`pnover=0.0 cm^-3`	Cross-term dependence of nover.
516	`pwl2=0.0`	Cross-term dependence of wl2.
517	`pvfbc=0.0 V`	Cross-term dependence of vfbc.
518	`pnsubc=0.0 cm^-3`	Cross-term dependence of nsubc.
519	`pnsubp=0.0 cm^-3`	Cross-term dependence of nsubp.
520	`pscp1=0.0 1/V`	Cross-term dependence of scp1.
521	`pscp2=0.0 1/V^2`	Cross-term dependence of scp2.
522	`pscp3=0.0 m/V^2`	Cross-term dependence of scp3.
523	`psc1=0.0 1/V`	Cross-term dependence of sc1.
524	`psc2=0.0 1/V^2`	Cross-term dependence of sc2.
525	`psc3=0.0 m/V^2`	Cross-term dependence of sc3.
526	`ppgd1=0.0 V`	Cross-term dependence of pgd1.
527	`ppgd3=0.0`	Cross-term dependence of pgd3.
528	`pndep=0.0`	Cross-term dependence of ndep.
529	`pninv=0.0`	Cross-term dependence of ninv.
530	`pmuecb0=0.0 cm^2/(V*s)`
		Cross-term dependence of muecb0.
531	`pmuecb1=0.0 cm^2/(V*s)`
		Cross-term dependence of muecb1.
532	`pmueph1=0.0`	Cross-term dependence of mueph1.
533	`pvtmp=0.0 cm/s`	Cross-term dependence of vtmp.
534	`pwvth0=0.0`	Cross-term dependence of wvth0.
535	`pmuesr1=0.0`	Cross-term dependence of muesr1.
536	`pmuetmp=0.0`	Cross-term dependence of muetmp.
537	`psub1=0.0 1/V`	Cross-term dependence of sub1.
538	`psub2=0.0 V`	Cross-term dependence of sub2.
539	`psvds=0.0`	Cross-term dependence of svds.
540	`psvbs=0.0`	Cross-term dependence of svbs.
541	`psvgs=0.0`	Cross-term dependence of svgs.
542	`pfn1=0.0`	Cross-term dependence of fn1.
543	`pfn2=0.0`	Cross-term dependence of fn2.
544	`pfn3=0.0`	Cross-term dependence of fn3.
545	`pfvbs=0.0`	Cross-term dependence of fvbs.
546	`pnsti=0.0 cm^-3`	Cross-term dependence of nsti.
547	`pwsti=0.0 m`	Cross-term dependence of wsti.
548	`pscsti1=0.0`	Cross-term dependence of scsti1.
549	`pscsti2=0.0 1/V`	Cross-term dependence of scsti2.
550	`pvthsti=0.0`	Cross-term dependence of vthsti.
551	`pmuesti1=0.0`	Cross-term dependence of muesti1.
552	`pmuesti2=0.0`	Cross-term dependence of muesti2.
553	`pmuesti3=0.0`	Cross-term dependence of muesti3.
554	`pnsubpsti1=0.0 m`	Cross-term dependence of nsubpsti1.
555	`pnsubpsti2=0.0 m`	Cross-term dependence of nsubpsti2.
556	`pnsubpsti3=0.0 m`	Cross-term dependence of nsubpsti3.
557	`pcgso=0.0 F/m`	Cross-term dependence of cgso.
558	`pcgdo=0.0 F/m`	Cross-term dependence of cgdo.
559	`pjs0=0.0 A/m^2`	Cross-term dependence of js0.
560	`pjs0sw=0.0 A/m`	Cross-term dependence of js0sw.
561	`pnj=0.0`	Cross-term dependence of nj.
562	`pcisbk=0.0 A`	Cross-term dependence of cisbk.
563	`pclm1=0.0`	Cross-term dependence of clm1.
564	`pclm2=0.0 1/m`	Cross-term dependence of clm2.
565	`pclm3=0.0`	Cross-term dependence of clm3.
566	`pwfc=0.0 m*F/cm^2`	Cross-term dependence of wfc.
567	`pgidl1=0.0 Am/(V^(3/2)c^(1/2))`
		Cross-term dependence of gidl1.
568	`pgidl2=0.0 1/(V^(1/2)c^(3/2)m)`
		Cross-term dependence of gidl2.
569	`pgleak1=0.0 A/(V^(3/2)*c^(1/2))`
		Cross-term dependence of gleak1.
570	`pgleak2=0.0 1/(V^(1/2)c^(3/2)m)`
		Cross-term dependence of gleak2.
571	`pgleak3=0.0`	Cross-term dependence of gleak3.
572	`pgleak6=0.0 V`	Cross-term dependence of gleak6.
573	`pglksd1=0.0`	Cross-term dependence of glksd1.
574	`pglksd2=0.0`	Cross-term dependence of glksd2.
575	`pglkb1=0.0`	Cross-term dependence of glkb1.
576	`pglkb2=0.0`	Cross-term dependence of glkb2.
577	`pnftrp=0.0`	Cross-term dependence of nftrp.
578	`pnfalp=0.0`	Cross-term dependence of nfalp.
579	`ppthrou=0.0`	Cross-term dependence of pthrou.
580	`pvdiffj=0.0 V`	Cross-term dependence of vdiffj.
581	`pibpc1=0.0`	Cross-term dependence of ibpc1.
582	`pibpc2=0.0`	Cross-term dependence of ibpc2.

Operating Point Parameters

1	`shetemp (C)`	Temperature rise due to self-heating.
2	`reversed`	Reverse mode indicator. Possible values are `yes` and `no`.
3	`ids (A)`	Resistive drain-to-source current.
4	`vgs (V)`	Gate-source voltage.
5	`vds (V)`	Drain-source voltage.
6	`vbs (V)`	Bulk-source voltage.
7	`vth (V)`	Threshold voltage.
8	`vdsat (V)`	Drain-source saturation voltage.
9	`gm (S)`	Common-source transconductance.
10	`gds (S)`	Common-source output conductance.
11	`gmbs (S)`	Body-transconductance.
12	`qb (Coul)`	Total bulk charge.
13	`qd (Coul)`	Total drain charge.
14	`qg (Coul)`	Total gate charge.
15	`qs (Coul)`	Total source charge.
16	`qb_itr (Coul)`	Intrinsic bulk charge.
17	`qd_itr (Coul)`	Intrinsic drain charge.
18	`qg_itr (Coul)`	Intrinsic gate charge.
19	`qs_itr (Coul)`	Intrinsic source charge.
20	`qdp (Coul)`	Total external drain charge.
21	`qsp (Coul)`	Total external source charge.
22	`cjd (F)`	Drain-bulk junction capacitance.
23	`cjs (F)`	Source-bulk junction capacitance.
24	`cgg (F)`	Intrinsic dQg_dVg.
25	`cgd (F)`	dQg_dVd.
26	`cgs (F)`	dQg_dVs.
27	`cgb (F)`	dQg_dVb.
28	`cdg (F)`	dQd_dVg.
29	`cdd (F)`	Intrinsic dQd_dVd.
30	`cds (F)`	dQd_dVs.
31	`cdb (F)`	dQd_dVb.
32	`csg (F)`	dQs_dVg.
33	`csd (F)`	dQs_dVd.
34	`css (F)`	Intrinsic dQs_dVs.
35	`csb (F)`	dQs_dVb.
36	`cbg (F)`	dQb_dVg.
37	`cbd (F)`	dQb_dVd.
38	`cbs (F)`	dQb_dVs.
39	`cbb (F)`	Intrinsic dQb_dVb.
40	`cdd_tot (F)`	Total dQd_dVd.
41	`cgg_tot (F)`	Total dQg_dVg.
42	`css_tot (F)`	Total dQs_dVs.
43	`cbb_tot (F)`	Total dQb_dVb.
44	`id (A)`	Resistive drain current.
45	`ig (A)`	Gate current.
46	`is (A)`	Resistive source current.
47	`ibulk (A)`	Resistive bulk current.
48	`pwr (W)`	Power at operating point.
49	`ps0 (V)`	Surface potential at source side.
50	`psl (V)`	Surface potential at drain side.
51	`pds (V)`	Delta surface potential between psl and ps0.
52	`isub (A)`	Substrate current Isub.
53	`gbds (S)`	Substrate trans conductance (dIsub/dVds).
54	`gbgs (S)`	Substrate trans conductance (dIsub/dVgs).
55	`gbbs (S)`	Substrate transconductance (dIsub/dVbs).
56	`igate (A)`	Gate current due to tunneling.
57	`igates (A)`	Tunneling current from gate to source.
58	`igateb (A)`	Tunneling current from gate to bulk.
59	`igated (A)`	Tunneling current from gate to drain.
60	`igisl (A)`	Gate-induced source leakage current.
61	`igidl (A)`	Gate-induced drain leakage current.
62	`ibs (A)`	Source-bulk diode current.
63	`ibd (A)`	Source-drain diode current.
64	`cgso (F)`	Gate-source overlap capacitance.
65	`cgbo (F)`	Gate-bulk overlap capacitance.
66	`cgdo (F)`	Gate-drain overlap capacitance.
67	`cggo (F)`	Gate-gate overlap capacitance.
68	`cddo (F)`	Drain-drain overlap capacitance.
69	`weff (m)`	Effective channel width.
70	`leff (m)`	Effective channel length.
71	`rseff (Ohm)`	Effective source resistance.
72	`rdeff (Ohm)`	Effective drain resistance.
73	`rsdrift (Ohm)`	The resistance of drift region for source side.
74	`rdrift (Ohm)`	The resistance of drift region for drain side.
75	`gmt (S)`	Temp transconductance.
76	`ic_bjt (A)`	Internal collector current of BJT.
77	`ie_bjt (A)`	Internal emitter current of BJT.
78	`ibase_bjt (A)`	Internal base current of BJT.
79	`ice (A)`	Collector-Emitter current of HiSIM_IGBT.
80	`vce (A)`	Collector-Emitter voltage of HiSIM_IGBT.
81	`qex (Coul)`	Excess charge in the base.
82	`qdep (Coul)`	Depletion charge in the base at the emitter side.
83	`rbase (Ohm)`	Effective internal base resistance.

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.


ad I-4	isub OP-52	pclm1 M-563	scsti1 M-135
ad M-28	js0 M-239	pclm2 M-564	scsti2 M-136
alarm M-21	js0sw M-240	pclm3 M-565	scsti3 M-137
as I-3	kappa M-96	pd I-6	sd I-35
as M-27	l I-2	pd M-30	shetemp OP-1
bb M-154	l M-26	pds OP-51	slg M-186
bgtmp1 M-87	lbgtmp1 M-362	peg0 M-512	slgl M-198
bgtmp2 M-88	lbgtmp2 M-363	pfn1 M-542	slglp M-199
bjtgminc M-335	lbinn M-359	pfn2 M-543	sub1 M-180
bjtgmine M-336	lcgdo M-410	pfn3 M-544	sub1l M-187
bjtldec M-337	lcgso M-409	pfvbs M-545	sub1lp M-200
bjtmuen M-329	lcisbk M-414	pgd1 M-97	sub2 M-181
bjtmuep M-328	lclm1 M-415	pgd2 M-98	sub2l M-188
bjtmueqn M-330	lclm2 M-416	pgd3 M-99	subld1 I-24
bjtnb M-347	lclm3 M-417	pgd4 M-100	subld1 M-84
bjtnc M-348	ldrift M-318	pgidl1 M-567	subld2 I-25
bjtne M-346	ldrift1 I-26	pgidl2 M-568	subld2 M-85
bjtninj M-325	ldrift1 M-80	pgleak1 M-569	svbs M-183
bjtninjmax M-326	ldrift1s I-31	pgleak2 M-570	svbsl M-184
bjtnref M-334	ldrift1s M-81	pgleak3 M-571	svbslp M-197
bjtpmin M-338	ldrift2 I-27	pgleak6 M-572	svds M-185
bjtqdep M-344	ldrift2 M-82	pglkb1 M-575	svgs M-182
bjtqex M-345	ldrift2s I-32	pglkb2 M-576	svgsl M-193
bjtrb M-339	ldrift2s M-83	pglksd1 M-573	svgslp M-194
bjtrbvg11 M-340	leff OP-70	pglksd2 M-574	svgsw M-196
bjtrbvg12 M-341	leg0 M-364	pibpc1 M-581	svgswp M-195
bjtrc M-342	lfn1 M-394	pibpc2 M-582	tcjbd M-247
bjtre M-343	lfn2 M-395	pjs0 M-559	tcjbdsw M-248
bjttaub M-332	lfn3 M-396	pjs0sw M-560	tcjbdswg M-249
bjttauc M-333	lfvbs M-397	pmuecb0 M-530	tcjbs M-250
bjttaue M-331	lgidl1 M-419	pmuecb1 M-531	tcjbssw M-251
bjtwb M-349	lgidl2 M-420	pmueph1 M-532	tcjbsswg M-252
bjtwdepmax M-327	lgleak1 M-421	pmuesr1 M-535	temp I-7
bjtwhalfcell M-350	lgleak2 M-422	pmuesti1 M-551	temp M-31
bs1 M-112	lgleak3 M-423	pmuesti2 M-552	tnom M-16
bs2 M-113	lgleak6 M-424	pmuesti3 M-553	tox M-33
bvd M-280	lglkb1 M-427	pmuetmp M-536	tpoly M-36
bvj M-282	lglkb2 M-428	pndep M-528	type M-1
bvs M-281	lglksd1 M-425	pnfalp M-578	vbd_max M-358
cbb OP-39	lglksd2 M-426	pnftrp M-577	vbi M-51
cbb_tot OP-43	libpc1 M-433	pninv M-529	vbox M-283
cbd OP-37	libpc2 M-434	pnj M-561	vbs OP-6
cbg OP-36	ljs0 M-411	pnover M-515	vbsmin M-293
cbs OP-38	ljs0sw M-412	pnovers M-513	vce OP-80
cdb OP-31	ll M-45	pnsti M-546	vdiffj M-259
cdd OP-29	lld M-46	pnsubc M-518	vds OP-5
cdd_tot OP-40	lln M-47	pnsubp M-519	vds0 M-143
cddo OP-68	lmax M-353	pnsubpsti1 M-554	vds_max M-355
cdg OP-28	lmin M-354	pnsubpsti2 M-555	vdsat OP-8
cds OP-30	lmuecb0 M-382	pnsubpsti3 M-556	vdsti M-142
cgb OP-27	lmuecb1 M-383	powrat M-324	version M-2
cgbo M-269	lmueph1 M-384	ppgd1 M-526	vfbc M-41
cgbo OP-65	lmuesr1 M-387	ppgd3 M-527	vfbover M-272
cgd OP-25	lmuesti1 M-403	ppthrou M-579	vgd_max M-356
cgdo M-268	lmuesti2 M-404	ps I-5	vgs OP-4
cgdo OP-66	lmuesti3 M-405	ps M-29	vgs_max M-357
cgg OP-24	lmuetmp M-388	ps0 OP-49	vmax M-155
cgg_tot OP-41	lndep M-380	psc1 M-523	vover M-156
cggo OP-67	lnfalp M-430	psc2 M-524	voverp M-157
cgs OP-26	lnftrp M-429	psc3 M-525	vovers M-158
cgso M-267	lninv M-381	pscp1 M-520	voversp M-159
cgso OP-64	lnj M-413	pscp2 M-521	vth OP-7
cisb M-261	lnover M-367	pscp3 M-522	vthsti M-126
cisbk M-264	lnovers M-365	pscsti1 M-548	vtmp M-160
cit M-230	lnsti M-398	pscsti2 M-549	vzadd0 M-237
cj M-244	lnsubc M-370	psl OP-50	w I-1
cjd OP-22	lnsubp M-371	psub1 M-537	w M-25
cjs OP-23	lnsubpsti1 M-406	psub2 M-538	w0 M-118
cjsw M-245	lnsubpsti2 M-407	psvbs M-540	warn M-279
cjswg M-246	lnsubpsti3 M-408	psvds M-539	wbgtmp1 M-436
clm1 M-174	lod I-22	psvgs M-541	wbgtmp2 M-437
clm2 M-175	lover I-28	pthrou M-231	wbinn M-360
clm3 M-176	lover M-44	pthroub M-232	wcgdo M-484
clm4 M-177	loverld I-30	pvdiffj M-580	wcgso M-483
clm5 M-178	loverld M-78	pvfbc M-517	wcisbk M-488
clm6 M-179	lovers I-29	pvfbover M-514	wclm1 M-489
coadov M-6	lovers M-79	pvmax M-509	wclm2 M-490
codfm M-22	lp M-42	pvthsti M-550	wclm3 M-491
coflick M-12	lpext M-54	pvtmp M-533	weff OP-69
cogidl M-8	lpgd1 M-378	pwfc M-566	weg0 M-438
coign M-19	lpgd3 M-379	pwl2 M-516	wfc M-114
coiigs M-9	lpthrou M-431	pwr OP-48	wfn1 M-468
coiprv M-4	lsc1 M-375	pwsti M-547	wfn2 M-469
coisti M-13	lsc2 M-376	pwvth0 M-534	wfn3 M-470
coisub M-7	lsc3 M-377	pzadd0 M-238	wfvbs M-471
compatible M-20	lscp1 M-372	qb OP-12	wgidl1 M-493
conqs M-14	lscp2 M-373	qb_itr OP-16	wgidl2 M-494
coovlp M-10	lscp3 M-374	qd OP-13	wgleak1 M-495
coovlps M-11	lscsti1 M-400	qd_itr OP-17	wgleak2 M-496
copprv M-5	lscsti2 M-401	qdep OP-82	wgleak3 M-497
corbnet I-11	lsub1 M-389	qdftvd M-296	wgleak6 M-498
corbnet M-18	lsub2 M-390	qdp OP-20	wglkb1 M-501
corg I-17	lsvbs M-392	qex OP-81	wglkb2 M-502
corg M-17	lsvds M-391	qg OP-14	wglksd1 M-499
corsrd M-3	lsvgs M-393	qg_itr OP-18	wglksd2 M-500
coselfheat M-23	lvdiffj M-432	qme1 M-93	wibpc1 M-507
cosym M-24	lvfbc M-369	qme2 M-94	wibpc2 M-508
cothrml M-15	lvfbover M-366	qme3 M-95	wjs0 M-485
csb OP-35	lvmax M-361	qovsm M-307	wjs0sw M-486
csd OP-33	lvthsti M-402	qs OP-15	wl M-48
csg OP-32	lvtmp M-385	qs_itr OP-19	wl1 M-168
css OP-34	lwfc M-418	qsp OP-21	wl1p M-169
css_tot OP-42	lwl2 M-368	rbase OP-83	wl2 M-170
ctemp M-263	lwsti M-399	rbdb I-15	wl2p M-171
cth0 M-295	lwvth0 M-386	rbdb M-61	wld M-49
cvb M-262	m I-23	rbpb I-12	wln M-50
cvbk M-265	mbe0 M-287	rbpb M-58	wmax M-351
cvdsover M-323	mbewl M-286	rbpd I-13	wmin M-352
ddltict M-277	mismatchdist M-290	rbpd M-59	wmuecb0 M-456
ddltmax M-275	mismatchmod M-289	rbps I-14	wmuecb1 M-457
ddltslp M-276	mj M-253	rbps M-60	wmueph1 M-458
divx M-266	mjsw M-254	rbsb I-16	wmuesr1 M-461
dly1 M-233	mjswg M-255	rbsb M-62	wmuesti1 M-477
dly2 M-234	mphdfm M-278	rd M-40	wmuesti2 M-478
dly3 M-235	muecb0 M-144	rd2 M-69	wmuesti3 M-479
dlyov M-236	muecb1 M-145	rd20 M-299	wmuetmp M-462
dtemp I-8	mueph0 M-146	rd21 M-300	wndep M-454
dtemp M-32	mueph1 M-147	rd22 M-301	wnfalp M-504
eg0 M-86	mueph2 M-117	rd22d M-302	wnftrp M-503
egig M-221	muephl M-161	rd23 M-303	wninv M-455
falph M-228	muephs M-172	rd23l M-312	wnj M-487
fn1 M-189	muephw M-122	rd23lp M-313	wnover M-441
fn2 M-190	mueplp M-162	rd23s M-314	wnovers M-439
fn3 M-191	muepsp M-173	rd23sp M-315	wnsti M-472
fvbs M-192	muepwp M-123	rd24 M-304	wnsubc M-444
gbbs OP-55	mueslp M-165	rd25 M-305	wnsubp M-445
gbds OP-53	muesr0 M-149	rd26 M-306	wnsubpsti1 M-480
gbgs OP-54	muesr1 M-150	rd3 M-70	wnsubpsti2 M-481
gbmin M-63	muesrl M-163	rdeff OP-72	wnsubpsti3 M-482
gds OP-10	muesrw M-164	rdict1 M-75	wpgd1 M-452
gidl1 M-222	muesti1 M-127	rdict2 M-77	wpgd3 M-453
gidl2 M-223	muesti2 M-128	rdov11 M-71	wpthrou M-505
gidl3 M-224	muesti3 M-129	rdov12 M-72	wsc1 M-449
gidl4 M-225	mueswp M-125	rdov13 M-73	wsc2 M-450
gidl5 M-226	muetmp M-148	rdrift OP-74	wsc3 M-451
gleak1 M-204	mvt0 M-285	rds M-316	wscp1 M-446
gleak2 M-205	mvtwl M-284	rdslp1 M-74	wscp2 M-447
gleak3 M-206	mvtwl2 M-288	rdslp2 M-76	wscp3 M-448
gleak4 M-207	ndep M-151	rdsp M-317	wscsti1 M-474
gleak5 M-208	ndepl M-166	rdtemp1 M-89	wscsti2 M-475
gleak6 M-218	ndeplp M-167	rdtemp2 M-90	wsti M-121
gleak7 M-219	nf I-21	rdvb M-298	wstil M-133
glkb0 M-212	nfalp M-227	rdvd M-297	wstilp M-134
glkb1 M-213	nftrp M-229	rdvdl M-308	wstiw M-140
glkb2 M-214	ngcon I-18	rdvdlp M-309	wstiwp M-141
glkb3 M-220	ninv M-152	rdvds M-310	wsub1 M-463
glksd1 M-209	ninvd M-153	rdvdsp M-311	wsub2 M-464
glksd2 M-210	nj M-241	rdvdtemp1 M-91	wsvbs M-466
glksd3 M-211	njsw M-242	rdvdtemp2 M-92	wsvds M-465
glpart1 M-203	nover M-273	rdvg11 M-291	wsvgs M-467
gm OP-9	novers M-274	rdvg12 M-292	wvdiffj M-506
gmbs OP-11	npext M-55	reversed OP-2	wvfbc M-443
gmt OP-75	nrd I-10	rs M-39	wvfbover M-440
ibase_bjt OP-78	nrs I-9	rsdrift OP-73	wvmax M-435
ibd OP-63	nsti M-120	rseff OP-71	wvth0 M-124
ibpc1 M-201	nsubc M-37	rsh M-56	wvthsc M-119
ibpc2 M-202	nsubcdfm I-36	rshg M-57	wvthsti M-476
ibs OP-62	nsubcw M-115	rth0 M-294	wvtmp M-459
ibulk OP-47	nsubcwp M-116	rth0nf M-322	wwfc M-492
ic_bjt OP-76	nsubp M-38	rth0r M-319	wwl2 M-442
ice OP-79	nsubp0 M-52	rth0w M-320	wwsti M-473
id OP-44	nsubpsti1 M-130	rth0wp M-321	wwvth0 M-460
ids OP-3	nsubpsti2 M-131	sa I-33	xgl I-20
ie_bjt OP-77	nsubpsti3 M-132	saref M-138	xgw I-19
ig OP-45	nsubwp M-53	sb I-34	xl M-64
igate OP-56	ovmag M-271	sbref M-139	xld M-34
igateb OP-58	ovslp M-270	sc1 M-102	xldld M-68
igated OP-59	parl2 M-101	sc2 M-103	xqy M-43
igates OP-57	pb M-256	sc2b M-104	xqy1 M-66
igidl OP-61	pbgtmp1 M-510	sc3 M-105	xqy2 M-67
igisl OP-60	pbgtmp2 M-511	sc4 M-106	xti M-243
igtemp1 M-215	pbsw M-257	scp1 M-107	xti2 M-260
igtemp2 M-216	pbswg M-258	scp2 M-108	xw M-65
igtemp3 M-217	pcgdo M-558	scp21 M-111	xwd M-35
is OP-46	pcgso M-557	scp22 M-110
isnoisy I-37	pcisbk M-562	scp3 M-109

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Spectre Circuit Simulator Components and Device Models ReferenceProduct Version 23.1, June 2023