34
HiSIM_Diode Model (hisim_diode)
HiSIM_Diode is a compact diode model with reverse recovery. It supports DC, AC, and transient analyses.
Elements considered in HiSIM_Diode model are summarized in the figure below. The internal node p’ is determined when the parasitical resistor is given. The applied voltage Vpn is reduced effectively to Vp’n due to the potential drop Vpp’ induced by the resistance Rs.
The basic model concept is consistent with that of conventional diode. The reverse recovery effect is additionally introduced in the HiSIM_Diode model. A high voltage p-i-n structure operating in high level injection is assumed as typical for most power diodes. In actual diodes, reverse recovery is caused by diffusion of charge from the center of the i region, thus, one or more charge storage nodes must be added to provide for this diffusion current. In HiSIM_Diode model, modified lumped charge concept is implemented and charge storage node is adopted. Two model parameters are introduced in the model: The carrier transit time TAUTRAN and the recovery time TAUREC.
Return to top