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HiSIM_IGBT Model (hisim_igbt)

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HiSIM_IGBTs (Insulated Gate Bipolar Transistors) have been developed for high voltage applications (500V and above), which require low switching power and fast switching speed. The complicated IGBT structure, which combines a bipolar junction transistor (BJT) with a MOSFET for base-current switching, imposes challenging problems on compact modeling for circuit simulation. HiSIM_IGBT model combines surface-potential-based HiSIM_HV model with a thick base BJT model and make is possible to modeling real device and complicated circuit.

This chapter contains the following information:

• Model Concepts
• Model Usage
  • Instance Syntax
  • Model Syntax
  • Sample Model Statement
• Component Statements