Parameter Descriptions

Table -2 Process Parameters Group

Parameter	Unit	Description	Default	MIN	MAX
ITL	μm²	Interface states scaling factor	0	0
LPKT	μm	Pocket length	0
NP	cm^-3	Polysilicon doping	10²²	(See Note²)	None
NSUB	cm^-3	Substrate doping		10¹⁵
QMC None	None	QM correction factor	0	0
TOX	m	Oxide thickness

At present, PL = 0.2.

Table -3 Effective Geometry Group

Parameter	Unit	Description	MIN	MAX
DL0	μm	Channel length offset	See Note3
DLL	μm²	Channel length adjustment (L)	See Note3
DLW	μm²	Channel length adjustment (W)	See Note4
DW0	μm	Channel width offset
DWL	μm²	Channel width adjustment (L)
DWW	μm²	Channel width adjustment (W)
DWP	μm³	Channel width perimeter factor
DLQ	μm	Decoupling parameter		none
DWQ	μm	Decoupling parameter		none

Table -4 Mobility Group

Parameter	Unit	Description	Default	MIN	MAX
MU0		Low-field mobility	500	0.01	10⁴
NU0		Non-universality factor	0	0	1
NUL		Non-universality factor (L)	0	See Note5
NUW		Non-universality factor (W)	0	See Note5
MU1		Magnitude of the vertical field dependence	0.5	0
MU1W		Scaling parameter (W)	0
MU2	None	Sharpness of the vertical field dependence	1.5	0	3
MU3		Scaling parameter (W)	0
CS	None	Coulomb scattering	0	0	10

Table -5 Series Resistance Group

Parameter	Description	Default	MIN	MAX
R0	Fixed component of series resistance		See Note6
R1	Scaling factor (L)	0
R2	Scaling factor (W)	0
R3	Scaling factor (L,W)	0
R4	Gate bias dependence	0	0	None
R5	Scaling factor (L) gate bias dependence	0.02
R6	Scaling factor (W) for gate bias dependence	0	See Note7
RB	Back bias factor	0	0	1.0

Table -6 Velocity Saturation Group

Parameter	Unit	Description	Default	MIN	MAX
VSAT	m/s	Saturation velocity	80,000	50,000	150,000
ST0		Gate bias dependence of saturation velocity	0	0	0.3
ST1		Adjustment of saturation velocity (W)	0	ST1_min See Note8	ST1_max See Note⁹
STX		Back bias dependence of saturation velocity	0	0	1
GH0	None	Grotjohn/Hofflinger (GH) factor	0.5	0.05	5
GH1		GH Scaling parameter (L^-1)	0	See Note10
GH2		GH Scaling parameter (L^-2)	0
GH3		GH Scaling parameter (L^-2W^-1)	0
GH4		GH Scaling parameter (L^-2W^-2)	0
AS0	None	Transition from triode to saturation	12	6	100
ASL	None	Scaling factor (L) for triode-saturation	0.6	See Note11
S0	None	V_dsat adjustment	0.98	0.9	0.99

Table -7 Flat-band Voltage Group

Parameter	Unit	Description	Default
FB0	V	V_fb for long wide devices	-1
FB1		Scaling parameter (W^-1)	0
FB2		Scaling parameter (W^-2)	0
FB3		RSE parameter (W^-1)	0
FB4		RSE parameter (W^-2)	0
FB5		RSE parameter (L^-1)	0
FB6		RSE parameter (L^-2)	0
FB7		RSE parameter (L^-3)	0

There are no limits on flat-band voltage parameters.

Table -8 Lateral Gradient Factor Group

Parameter	Unit	Description	Default	MIN	MAX
FL1		Scaling parameter for F₀	0.1	See Note12
FL2		Scaling parameter for F₀	0.01	See Note12
AF0		Scaling parameter for A_f	0.004	0	10
AFL		Scaling parameter for A_f	0		10
BFL		Scaling parameter for B_f	0.015	0	10
CF0		Scaling parameter for C_f	0.0005	0	10
CFL		Scaling parameter for C_f	0.01		10
KL		Scaling parameter for C_LW	0	-KL0 (See Note13)	KLO
KW		Scaling parameter for C_LW	0		10
DF	None	Sharpness of f(V_ds) dependence	0	0	3
EF	None	Sharpness of f(V_sb) dependence	0	0	3

Table -9 Channel Length Modulation Group

Parameter	Unit	Description	Default	MIN	MAX
CLM0	None	L_q2d parameter	0.1	0	none
CLM1		L_q2dscaling parameter (L)	0
CLM2		L_q2d scaling parameter (W)	0
CLM3		Logarithm dependence factor	10	0	1000
GDL		Scaling parameter (L)	0	0	0.9

New Parameters for SPMOS Version 34

The following parameters have been added to version 34.

Parameter	Unit	Description	Default	MIN	MAX
NCG		Instance parameter for factor of Rgate	1	1	2
SW_GIDL		Flag og gidl	0	0	1
IT0		Interface states scaling factor	0	0	2
NPKT	um	Effective doping parameter	1.0	0	2
NSLP	1/V	Effective doping parameter	0	0	2
YPKT		Effective doping parameter	0.001	0.001	2
VNSUB	V	Effective doping parameter	0
GDS1		V_ds dependence of G_dsslope	0
GDS2		V_ds dependence of G_dsslope	0
GDS1L	1/	Scaling parameter for Hlo1	0
GDS2L	1/	Scaling parameter for Hlo2	0
GDS1A		Scaling parameter for Hlo1	0
GDS2A		Scaling parameter for Hlo1	0
TK_BGIDL	1/K	Temperature dependence	0.0	0.0	1.0
TK_IIA2		Substrate current scaling parameter	0.0	0.0	1.0
KGOV		Decouples tunneling and CV overlap fitting	1	0.1	10
CHIB	eV	Band offset	3.13	2.5	4
AGIDL		I_GIDL coefficient	0.7	0
BGIDL	V	Tunneling barrier adjustment	28	1	100
CGIDL	1/V	Lateral field dependence	0.007	0	1
IIA1W	/V^1/2	Substrate current scaling parameter	0	-1	1
IIA1P	/V^1/2	Substrate current scaling parameter	0	-1	1

Parameters with Different Default Values for SPMOS Version 34

Model Parameter	Old Default Value	New Default Value
noia	0.0	1.0e+20
noib	0.0	5.0e+04
noic	0.0	1.4e-12

Instead of limiting TK_MU0, TK_MUL, TK_MUW and TK_MUP, SPMOS sets

Setting NP=0 or NP > 10²⁸m^-3 turns off polysilicon depletion effect.

Instead of limiting the values of DL0, DLL and DLW, SPMOS sets the channel length offset as

and the effective channel length (in μm) as

Instead of limiting parameter values of DW0, DWL, DWW and DWP, SPMOS sets the channel width offset as

and the effective channel length (in μm) as

At present, P _w=1/4.

Instead of limiting NU0, NUL and NUW, SPMOS sets

Instead of limiting the values of R0, R1, R2, and R3, SPMOS sets

Instead of limiting the values of R6, SPMOS sets

Instead of limiting the values of GH1, GH2, GH3, and GH4, SPMOS forces G_hf to be in the range [0.05, 5]

Instead of limiting the values of ASL, SPMOS forces a_x to be in the range [2,20]

Instead of limiting the values of FL1 and FL2, SPMOS forces F₀ to be in the range [0.001, 1]

Instead of limiting the values of GDS1 and GDS2, SPMOS forces

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Spectre Circuit Simulator Components and Device Models ReferenceProduct Version 23.1, June 2023