Product Documentation
Spectre Circuit Simulator Components and Device Models Reference
Product Version 23.1, June 2023

36

MOS Level-0 Transistor (mos0)

The MOS0 model is a simplified MOS level-1 model. The MOS0 DC drain current model is different from the Shichman and Hodges model because body effects are not modeled in MOS0. The intrinsic MOS gate capacitances are replaced by the following linear overlap capacitances:

MOS0 is usually used as a MOS switch. This model recognizes all the MOS and BSIM instance parameters but only uses l and w, ignoring all other parameters. MOS0 transistors require that you use a model statement.

This device is not supported within altergroup.

Instance Syntax

Name  d  g  s  b ModelName parameter=value ...

Sample Instance Statement

mp1 (0 1 2 2) pchmod0 l=2u w=30u ad=120p as=75p pd=36u ps=6u

Instance Parameters

w (m)

Channel width.

l (m)

Channel length.

m=1

Multiplicity factor (number of MOSFETs in parallel).

trise=0.0 K

Temperature rise from ambient

dtemp=0.0 K

Alias for trise.

Model Syntax

model modelName mos0 parameter=value ...

Sample Model Statement

model pchmod0 mos0 type=p vto=-0.683 tox=0.21e-7 ld=0.45e-6 tnom=27

Model Parameters

Device type parameters

type=n

Transistor type. Possible values are n or p.

Drain current model parameters

vto=0 V

Threshold voltage at zero body bias.

kp=2.0718e-5 A/V2

Transconductance parameter.

lambda=0.02 1/V

Channel length modulation parameter.

tox=1e-7 m

Gate oxide thickness.

ld=0 m

Lateral diffusion.

wd=0 m

Field-oxide encroachment.

Charge model selection parameters

capmod=gnd

Intrinsic charge model. Possible values are none, overlap, bulk,  or gnd.

Temperature parameters

tnom (C)

Parameters measurement temperature. Default set by options.

trise=0 C

Temperature rise from ambient.

Default device parameters

w=3e-6 m

Default channel width.

l=3e-6 m

Default channel length.

Operating-Point Parameters

type=n

Transistor type. Possible values are n or p.

id (A)

Resistive drain current.

vgs (V)

Gate-source voltage.

vds (V)

Drain-source voltage.

vbs (V)

Bulk-source voltage.

vth (V)

Threshold voltage.

vdsat (V)

Drain-source saturation voltage.

gm (S)

Common-source transconductance.

gds (S)

Common-source output conductance.

cgs (F)

Gate-source capacitance.

cgd (F)

Gate-drain capacitance.

cgate (F)

Gate-Ground capacitance.

ron (Ω)

On-resistance.

pwr (W)

Power at op point.

Return to top
 ⠀
X