Scaling Equations

The drawn channel dimensions are denoted as L_DR, W_DR (in m) or as L_DR,μ_m, W_DR,μ_m (in μm). The minimum device dimensions for a given technology are L_REF, W_REF (in m) or as L_REF,μ_m, W_REF,μ_m (in μm).

Effective channel length in μm

where

Effective channel length in m

Effective channel width in μm,

Effective channel width in m

Total oxide capacitance,

Flat-band voltage (which in SPMOS includes reverse short-channel effect if any)

Drift velocity local parameters

Local parameters for the lateral field gradient

and

Mobility model parameter

Mobility model parameter (correction for “non-universality”)

Bias-independent part of the series resistance

Constant used to describe gate bias dependence of the series resistance

Triode-saturation transition variable

Characteristic length of the quai-2D theory

Subthreshold slope parameter

Substrate doping variable

Halo-doping effect parameters

Effective doping

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