37
MOS Level-15 Transistor (mos15)
The MOS15 model is the AMS level 15 model which is the modified Berkeley SPICE level-2 model with the DC model replaced by that of AMS. It is an analytical one-dimensional model that incorporates most of the second-order small-size effects. A smoother version of the level-15 model (with continuous Gds at Vdsat) was also developed. Three charge models are available. MOS15 transistors require the use of a model statement.
This device is not supported within altergroup.
This device is dynamically loaded from the shared object /<install_dir>/tools.lnx86/cmi/lib/5.0/libphilips_sh.so.
Instance Syntax
Name d g s b ModelName parameter=value ...
Instance Parameters
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w (m)
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Channel width.
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l (m)
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Channel length.
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as (m2)
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Area of source diffusion.
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ad (m2)
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Area of drain diffusion.
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ps (m)
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Perimeter of source diffusion.
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pd (m)
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Perimeter of drain diffusion.
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nrd (m/m)
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Number of squares of drain diffusion.
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nrs (m/m)
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Number of squares of source diffusion.
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ld (m)
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Length of drain diffusion region.
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ls (m)
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Length of source diffusion region.
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m=1
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Multiplicity factor (number of MOSFETs in parallel).
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region=triode
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Estimated operating region. Spectre generates output number (0-3) in a rawfile. Possible values are off, triode, sat, or subth.
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trise
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Temperature rise from ambient.
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Model Syntax
model modelName mos15 parameter=value ...
Model Parameters
Device type parameters
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ype=n
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Transistor type. Possible values are n or p.
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Drain current model parameters
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vto=0.5 V
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Threshold voltage at zero body bias.
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kp=2.0718e-5 A/V2
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Transconductance parameter.
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lambda=0.5 1/V
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Channel length modulation parameter.
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phi=0.7 V
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Surface potential at strong inversion.
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gamma=1.0 √V
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Body-effect parameter.
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uo=600 cm2/V s
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Carrier surface mobility.
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vmax=8.0e4 m/s
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Carrier saturation velocity.
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ucrit=2.0e6 V/cm
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Critical field for mobility degradation.
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uexp=0
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Critical field exponent for mobility degradation.
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utra=0 1/V
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Transverse field for mobility.
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neff=1
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Total channel charge coefficient.
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delta=0
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Width effect on threshold voltage.
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Process parameters
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nsub=1.13e16 cm-3
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Channel doping concentration.
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nss=0 cm-2
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Surface state density.
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nfs=0 cm-2
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Fast surface state density.
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tpg=+1
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Type of gate (+1 = opposite of substrate, -1 = same as substrate, 0 = aluminum).
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tox=1e-7 m
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Gate oxide thickness.
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ld=0 m
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Lateral diffusion.
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wd=0 m
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Field-oxide encroachment.
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xw=0 m
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Width variation due to masking and etching.
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xl=0 m
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Length variation due to masking and etching.
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xj=0.15e-6 m
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Source/drain junction depth.
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Impact ionization parameters
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ai0=0 1/V
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Impact ionization current coefficient.
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lai0=0 μm/V
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Length sensitivity of ai0.
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wai0=0 μm/V
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Width sensitivity of ai0.
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bi0=0 V
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Impact ionization current exponent.
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lbi0=0 μm V
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Length sensitivity of bi0.
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wbi0=0 μm V
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Width sensitivity of bi0.
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Overlap capacitance parameters
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cgso=0 F/m
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Gate-source overlap capacitance.
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cgdo=0 F/m
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Gate-drain overlap capacitance.
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cgbo=0 F/m
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Gate-bulk overlap capacitance.
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meto=0 m
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Metal overlap in fringing field.
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Charge model selection parameters
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capmod=bsim
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Intrinsic charge model. Possible values are none, meyer, yang, or bsim.
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xpart=1
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Drain/source channel charge partition in saturation for BSIM charge model, use 0.0 for 40/60, 0.5 for 50/50, or 1.0 for 0/100.
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xqc=0
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Drain/source channel charge partition in saturation for charge models, e.g. use 0.4 for 40/60, 0.5 for 50/50, 0 for 0/100.
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Parasitic resistance parameters
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rs=0 Ω
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Source resistance.
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rd=0 Ω
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Drain resistance.
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rsh=0 Ω/sqr
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Source/drain diffusion sheet resistance.
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rss=0 Ω m
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Scalable source resistance.
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rdd=0 Ω m
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Scalable drain resistance.
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rsc=0 Ω
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Source contact resistance.
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rdc=0 Ω
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Drain contact resistance.
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minr=0.1 Ω
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Minimum source/drain resistance.
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ldif=0 m
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Lateral diffusion beyond the gate.
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hdif=0 m
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Length of heavily doped diffusion.
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lgcs=0 m
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Gate-to-contact length of source side.
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lgcd=0 m
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Gate-to-contact length of drain side.
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sc=∞ m
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Spacing between contacts.
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Junction diode model parameters
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js (A/m2)
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Bulk junction reverse saturation current density.
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is=1e-14 A
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Bulk junction reverse saturation current.
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n=1
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Junction emission coefficient.
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dskip=yes
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Use simple piece-wise linear model for diode currents below 0.1*iabstol. Possible values are no or yes.
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imax=1 A
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Explosion current.
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jmax=1e8 A/m2
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Explosion current density.
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Junction capacitance model parameters
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cbs=0 F
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Bulk-source zero-bias junction capacitance.
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cbd=0 F
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Bulk-drain zero-bias junction capacitance.
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cj=0 F/m2
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Zero-bias junction bottom capacitance density.
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mj=1/2
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Bulk junction bottom grading coefficient.
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pb=0.8 V
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Bulk junction built-in potential.
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fc=0.5
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Forward-bias depletion capacitance threshold.
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cjsw=0 F/m
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Zero-bias junction sidewall capacitance density.
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mjsw=1/3
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Bulk junction sidewall grading coefficient.
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pbsw=0.8 V
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Side-wall junction built-in potential.
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fcsw=0.5
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Side-wall forward-bias depletion capacitance threshold.
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Operating region warning control parameters
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alarm=none
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Forbidden operating region. Possible values are none, off, triode, sat, subth, or rev.
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bvj=∞ V
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Junction reverse breakdown voltage.
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Temperature effects parameters
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tnom (C)
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Parameters measurement temperature. Default set by options.
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trise=0 C
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Temperature rise from ambient.
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uto=0 C
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Mobility temperature offset.
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ute=-1.5
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Mobility temperature exponent.
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tlev=0
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DC temperature selector.
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tlevc=0
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AC temperature selector.
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eg=1.12452 V
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Energy band gap.
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gap1=7.02e-4 V/C
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Band gap temperature coefficient.
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gap2=1108 C
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Band gap temperature offset.
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f1ex=0
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Temperature exponent for ucrit.
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lamex=0 1/C
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Temperature parameter for lambda and kappa.
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trs=0 1/C
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Temperature parameter for source resistance.
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trd=0 1/C
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Temperature parameter for drain resistance.
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xti=3
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Saturation current temperature exponent.
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ptc=0 V/C
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Surface potential temperature coefficient.
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tcv=0 V/C
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Threshold voltage temperature coefficient.
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pta=0 V/C
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Junction potential temperature coefficient.
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ptp=0 V/C
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Sidewall junction potential temperature coefficient.
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cta=0 1/C
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Junction capacitance temperature coefficient.
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ctp=0 1/C
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Sidewall junction capacitance temperature coefficient.
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Default instance parameters
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w=3e-6 m
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Default channel width.
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l=3e-6 m
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Default channel length.
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as=0 m2
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Default area of source diffusion.
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ad=0 m2
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Default area of drain diffusion.
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ps=0 m
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Default perimeter of source diffusion.
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pd=0 m
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Default perimeter of drain diffusion.
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nrd=0 m/m
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Default number of squares of drain diffusion.
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nrs=0 m/m
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Default number of squares of source diffusion.
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ldd=0 m
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Default length of drain diffusion region.
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lds=0 m
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Default length of source diffusion region.
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Noise model parameters
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kf=0
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Flicker (1/f) noise coefficient.
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af=1
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Flicker (1/f) noise exponent.
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ef=1
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Flicker (1/f) noise frequency exponent.
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noisemod=1
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Noise model selector.
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The imax (jmax) parameter is used to aid convergence and prevent numerical overflow. The junction characteristics of the FET are accurately modeled for current (density) up to imax (jmax). For currents (density) above imax (jmax), the junction is modeled as a linear resistor and a warning is printed.
Output Parameters
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weff (m)
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Effective channel width.
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leff (m)
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Effective channel length.
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rseff (Ω)
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Effective source resistance.
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rdeff (Ω)
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Effective drain resistance.
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Operating-Point Parameters
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type=n
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Transistor type. Possible values are n or p.
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region=triode
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Estimated operating region. Spectre generates output number (0-3) in a rawfile. Possible values are off, triode, sat, or subth.
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reversed
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Reverse mode indicator. Possible values are no or yes.
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id (A)
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Resistive drain current.
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ds (A)
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Resistive current from drain to source.
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vgs (V)
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Gate-source voltage.
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vds (V)
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Drain-source voltage.
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vbs (V)
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Bulk-source voltage.
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vth (V)
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Threshold voltage.
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vdsat (V)
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Drain-source saturation voltage.
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gm (S)
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Common-source transconductance.
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gds (S)
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Common-source output conductance.
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gmbs (S)
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Body-transconductance.
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gameff (√V )
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Effective body effect coefficient.
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betaeff (A/V2)
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Effective beta.
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cbd (F)
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Drain-bulk junction capacitance.
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cbs (F)
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Source-bulk junction capacitance.
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cgs (F)
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Gate-source capacitance.
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cgd (F)
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Gate-drain capacitance.
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cgb (F)
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Gate-bulk capacitance.
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ron (Ω)
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On-resistance.
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ib (A)
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Resistive bulk current.
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pwr (W)
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Power at operating point.
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