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Angelov Model
The Angelov model is an empirical equation-based large signal model that is used for III-V field effect transistors, such as HEMT and MESFET. This model can be used for GaAs and other HEMT devices. An enhancement version of Angelov model, which was developed by L.S. Liu, J.G. Ma, and G.I. Ng, is also integrated into this model, which improves both model accuracy and convergence. The enhancement version is called as MA (modified Angelov) model, which can be turned on with model parameter ma_mod=1.
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