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BSIM-IMG

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BSIM-IMG is a SPICE compact model for modeling the electrical characteristics of common gate MG structures, developed by UC Berkeley. The latest version is 102.80.

The BSIM-IMG models the independent double-gate structure as a four terminal device, containing the source(s), drain(d), front gate(fg), and back gate(bg) terminals. The two gates (fg, bg) are allowed to have different workfunctions ( ) and dielectric thicknesses (Tox1, Tox2). They can also be biased separately at different voltages.

This chapter contains the following information about the BSIM-IMG model:

• Model Overview
• BSIM-IMG Model Equations
  • Bias Independent Calculations
  • Terminal Voltages and Pre-Conditioning
  • Short Channel Effects
  • Body Doping Effects
  • Surface Potential Calculation
  • Drain Saturation Voltage
  • Calculate Average Field, Potential, and Charge
  • Mobility Degradation
  • Output Conductance
  • Veolocity Saturation
  • Drain Current Model
  • C-V Model
  • Parasitic Resistance and Capacitance Models
  • Impact Ionization and GIDL/GISL Model
  • Gate-Induced-Drain/Source-Leakage Current
  • Gate Tunneling Current
  • Self Heating Model
• Model Version Update
• Component Statements

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