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type=n
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Channel type parameter, n=NFET p=PFET. Possible values are n and p.
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noise=1
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Globally disable noise.
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noimod=0
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Noise model (0=def, 1=PRC).
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selft=0
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Flag for self-heating.
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idsmod=0
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Ids Current Model [0:1].
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igmod=0
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Select gate diode model [0:1].
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capmod=2
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Select cap model [0:2].
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ipk0=0.05 A
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Current for max. transconductance Ipk.
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vpks=(-0.2) V
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Gate voltage Vpk for max transconductance.
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dvpks=0.2 V
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Delta gate voltage at peak gm.
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p1=1.0 1/V
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Polynomial coeff P1 for channel current.
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p2=0.0 1/V2
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Polynomial coeff P2 for channel current.
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p3=0.0 1/V3
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Polynomial coeff P3 for channel current.
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alphar=0.1 1/V
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Saturation parameter alpha_r.
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alphas=1.0 1/V
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Saturation parameter alpha.
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vkn=0.8 V
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Knee voltage.
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lambda=0.0
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Channel length modulation parameter.
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lambda1=0.0
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Channel length modulation parameter.
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lvg=0.0
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Coeff for channel length modulation parameter
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b1=0.0
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Unsaturated coeff B1 for P1.
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b2=3.0 1/V
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Saturated coeff B2 for P1.
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lsb0=0.0
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Soft breakdown model parameter.
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vtr=20.0 V
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Soft breakdown model parameter.
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vsb2=0.0 V
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Surface breakdown model parameter.
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cds=0 F
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Zero-bias D-S junction capacitance.
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cgspi=0.0 F
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Gate-source pinch-off capacitance.
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cgs0=0.0 F
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Gate-source capacitance parameter.
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cgdpi=0.0 F
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Gate-drain pinch-off capacitance.
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cgdpe=0 F
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External G-D Capacitor.
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cgd0=0.0 F
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Gate-drain capacitance parameter Cgdo.
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p10=0.0
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Polynomial coeff P10 for capacitance.
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p11=1.0
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Polynomial coeff P11 for capacitance.
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p20=0.0
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Polynomial coeff P20 for capacitance.
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p21=0.2
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Polynomial coeff P21 for capacitance.
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p30=0.0
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Polynomial coeff P30 for capacitance.
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p31=0.2
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Polynomial coeff P31 for capacitance.
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p40=0.0
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Polynomial coeff P40 for capacitance.
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p41=1.0
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Polynomial coeff P41 for capacitance.
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p111=0.0
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Polynomial coeff P400 for capacitance.
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ij=0.00005 A
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Gate fwd saturation current.
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pg=(-(-9.9999e-99)
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Gate current parameter.
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ne=(-(-9.9999e-99))
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Gate p-n emission coeff.
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vjg=0.7 V
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Gate current parm.
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rg=0.0 Ω
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Gate ohmic resistance.
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rd=0.0 Ω
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Drain ohmic resistance.
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ri=0.0 Ω
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Input resistance.
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rs=0.0 Ω
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Source ohmic resistance.
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rgd=0 Ω
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Gate resistance.
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ld=0 H
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Drain ohmic inductance.
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ls=0 H
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Source ohmic inductance.
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lg=0 H
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Gate ohmic inductance.
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tau=0 s
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Device delay.
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rcmin=1.0e3 Ω
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Minimum value of Rc.
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rc=10.0e3 Ω
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R for freq dep output cond.
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crf=0.0 F
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C for freq dep output cond.
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rcin=100.0e3 Ω
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R for freq dep input cond.
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crfin=0.0 F
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C for freq dep input cond.
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rtherm=0.0
|
Alias of rth.
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rth=0.0 Ω
|
Thermal resistance.
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ctherm=0.0
|
Alias of cth.
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cth=0.0 F
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Thermal capacitance.
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tcipk0=0.0 A/K
|
Linear temp coef TIpk for Ipk.
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tcp1=0.0 A/K
|
Linear temp coef TIpk for Ipk.
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tccgs0=0.0
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Linear temp coef Cgs0 parm.
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tccgd0=0.0
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Linear temp coef Cgd0 parm.
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tclsb0=0.0
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Linear temp coef Lsb0 parm.
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tcrc=0.0
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Linear temp coef Rc parm.
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tccrf=0.0
|
Linear temp coef Crf parm.
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noiser=0.5
|
Gate noise coeff.
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noisep=1.0
|
Gate noise coeff.
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|
noisec=0.9
|
Gate-drain noise coeff.
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|
fnc=0.0 Hz
|
Noise corner freq.
|
|
kf=0.0
|
Flicker noise coeff.
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|
af=1.0
|
Flicker noise exponent.
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|
ffe=1.0
|
Flicker noise parameter.
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|
tg=25.0 C
|
Gate equiv temp.
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|
td=25.0 C
|
Drain equiv temp.
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|
td1=0.1 C
|
Drain equiv temp.
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|
tmn=1.0
|
Noise fitting coeff.
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|
klf=1.0e14
|
Flicker noise exponent.
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|
fgr=60.0e3 Hz
|
G-R freq corner.
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np=0.3
|
Flicker noise freq exp.
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|
lw=0.1 mm
|
Effective gate noise width.
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|
tnom=(-9.9999e-99) C
|
Parameters measurement temperature.
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|
version=2.3
|
The available version is 2.30(2.3.0).
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|
ma_mod=0
|
Flag to turn on Ma model.
|
|
trise=0.0 C
|
Temperature rise from ambient alias of dtemp. It serves as the default value of instance trise.
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