ab=1E-12 m²

Junction area.

area=1E-12

Junction area.

ls=1e-6 m

STI-edge part of junction perimeter.

pj=1e-6

STI-edge part of junction perimeter.

perim=1e-6

STI-edge part of junction perimeter.

lg=0 m

Gate-edge part of junction perimeter.

mult=1

Number of devices in parallel.

m=1

Number of devices in parallel.

trise=0.0

Temperature rise from the ambient.

region=on

Estimated operating region. Spectre generates output number (0-2) in a rawfile.
Possible values are off, on, and breakdown.

isnoisy=yes

Should the device generate noise. Possible values are yes and no.

level=1002

Model level must be 1002.

version=1

Model version.

subversion=0

Model subversion.

revision=0

Model revision.

type=n

Type parameter, n reflects n-type, p reflects p-type. Possible values are n and p.

dta=0 C

Temperature offset with respect to ambient temperature.

imax=1000 A

Maximum current up to which forward current behaves exponentially.

trj=21 C

Reference temperature.

cjorbot=1E-3 Fm^-2

Zero-bias capacitance per unit-of-area of bottom component.

cjorsti=1E-9 Fm^-1

Zero-bias capacitance per unit-of-length of STI-edge component.

cjorgat=1E-9 Fm^-1

Zero-bias capacitance per unit-of-length of gate-edge component.

vbirbot=1 V

Built-in voltage at the reference temperature of bottom component.

vbirsti=1 V

Built-in voltage at the reference temperature of STI-edge component.

vbirgat=1 V

Built-in voltage at the reference temperature of gate-edge component.

pbot=0.5

Grading coefficient of bottom component.

psti=0.5

Grading coefficient of STI-edge component.

pgat=0.5

Grading coefficient of gate-edge component.

phigbot=1.16 V

Zero-temperature bandgap voltage of bottom component.

phigsti=1.16 V

Zero-temperature bandgap voltage of STI-edge component.

phiggat=1.16 V

Zero-temperature bandgap voltage of gate-edge component.

idsatrbot=1E-12 Am^-2

Saturation current density at the reference temperature of bottom component.

idsatrsti=1E-18 Am^-1

Saturation current density at the reference temperature of STI-edge component.

idsatrgat=1E-18 Am^-1

Saturation current density at the reference temperature of gate-edge component.

csrhbot=1E2 Am^-3

Shockley-Read-Hall prefactor of bottom component.

csrhsti=1E-4 Am^-2

Shockley-Read-Hall prefactor of STI-edge component.

csrhgat=1E-4 Am^-2

Shockley-Read-Hall prefactor of gate-edge component.

xjunsti=100E-9 m

Junction depth of STI-edge component.

xjungat=100E-9 m

Junction depth of gate-edge component.

ctatbot=1E2 Am^-3

Trap-assisted tunneling prefactor of bottom component.

ctatsti=1E-4 Am^-2

Trap-assisted tunneling prefactor of STI-edge component.

ctatgat=1E-4 Am^-2

Trap-assisted tunneling prefactor of gate-edge component.

mefftatbot=0.25

Effective mass (in units of m0) for trap-assisted tunneling of bottom component.

mefftatsti=0.25

Effective mass (in units of m0) for trap-assisted tunneling of STI-edge component.

mefftatgat=0.25

Effective mass (in units of m0) for trap-assisted tunneling of gate-edge component.

cbbtbot=1E-12 AV^-3

Band-to-band tunneling prefactor of bottom component.

cbbtsti=1E-18 AV^-3m

Band-to-band tunneling prefactor of STI-edge component.

cbbtgat=1E-18 AV^-3m

Band-to-band tunneling prefactor of gate-edge component.

fbbtrbot=1E9 Vm^-1

Normalization field at the reference temperature for band-to-band tunneling of bottom component.

fbbtrsti=1E9 Vm^-1

Normalization field at the reference temperature for band-to-band tunneling of STI-edge component.

fbbtrgat=1E9 Vm^-1

Normalization field at the reference temperature for band-to-band tunneling of gate-edge component.

stfbbtbot=(-1E-3) K^-1

Temperature scaling parameter for band-to-band tunneling of bottom component.

stfbbtsti=(-1E-3) K^-1

Temperature scaling parameter for band-to-band tunneling of STI-edge component.

stfbbtgat=(-1E-3) K^-1

Temperature scaling parameter for band-to-band tunneling of gate-edge component.

vbrbot=10 V

Breakdown voltage of bottom component.

vbrsti=10 V

Breakdown voltage of STI-edge component.

vbrgat=10 V

Breakdown voltage of gate-edge component.

pbrbot=4 V

Breakdown onset tuning parameter of bottom component.

pbrsti=4 V

Breakdown onset tuning parameter of STI-edge component.

pbrgat=4 V

Breakdown onset tuning parameter of gate-edge component.

rsbot=0.0 VA^-1m²

Series resistance per unit-of-area of bottom component.

rssti=0.0 VA^-1m

Series resistance per unit-of-length of STI-edge component.

rsgat=0.0 VA^-1m

Series resistance per unit-of-length of gate-edge component.

rscom=0.0 ohm

Common series resistance, no scaling.

strs=0

Temperature scaling parameter for series resistance.

kf=0

KF parameter for flicker noise.

af=1.0

AF parameter for flicker noise.

tt=0 s

Transit time.

stvbrbot1=0 1/K

Temp. co of breakdown voltage bottom component.

stvbrbot2=0 1/K²

Temp. co of breakdown voltage bottom component.

stvbrsti1=0 1/K

Temp. co of breakdown voltage STI-edge component.

stvbrsti2=0 1/K²

Temp. co of breakdown voltage STI-edge component.

stvbrgat1=0 1/K

Temp. co of breakdown voltage gate-edge component.

stvbrgat2=0 1/K²

Temp. co of breakdown voltage gate-edge component.

nfabot=1.0

ideality factor bottom component.

nfasti=1.0

ideality factor STI-edge component.

nfagat=1.0

ideality factor gate-edge component.

abmin=0.0 m²

minimum allowed junction area.

abmax=1.0 m²

maximum allowed junction area.

lsmin=0.0 m

minimum allowed junction STI-edge.

lsmax=1.0 m

maximum allowed junction STI-edge.

lgmin=0.0 m

minimum allowed junction gate-edge.

lgmax=1.0 m

maximum allowed junction gate-edge.

tempmin=(-55) C

minimum allowed junction temp.

tempmax=155 C

maximum allowed junction temp.

vfmax=0.0 V

maximum allowed forward junction bias.

vrmax=0.0 V

maximum allowed reverse junction bias.

pt=3

Temp. co of saturation current.

xti=3

Temp. co of saturation current.

scalee=1.0

Scale parameter.

shrink=0

Scale parameter.

swjunexp=0.0

Flag for JUNCAP-express; 0=full model, 1=express model.

vjunref=2.5

Typical maximum junction voltage; usually about 2*VSUP.

fjunq=0.03

Fraction below which junction capacitance components are considered negligible.

corecovery

Flag for recovery equations; 0=original and 1=hiroshima

njh=1.0

High-injection emission coefficient.

njdv=0.1 1/V

Transition slope of emission coefficient

ndibot=1e16 cm-3

Doping concentration of drift region.

ndigat=1e16 cm-3

Doping concentration of drift region.

ndisti=1e16 cm-3

Doping concentration of drift region.

inj1=1.0

For carrier density.

inj2=10.0

For carrier density in high-density injection.

nqs=5e-9 sec

Carrier delay time.

tau=2e-7 sec

Carrier lifetime.

wi=5e-6 m

Length of drift region.

depnqs=0.0 sec

Depletion delay time.

tnom=21 C

Alias reference temperature.

taut=0.0

Temperature coefficient of carrier lifetime.

injt=0.0

Temperature coefficient of carrier density in high injection condition.

tempeff (C)

Effective temperature for a single device.

meff

Effective multiplicity factor (m factor)

region=on

Estimated operating region. Spectre generates output number (0-2) in a rawfile. Possible values are off, on, and breakdown.

vak (V)

Voltage between anode and cathode excluding the series resistor.

cj (F)

Total source junction capacitance.

cjbot (F)

Junction capacitance (bottom component).

cjgat (F)

Junction capacitance (gate-edge component).

cjsti (F)

Junction capacitance (STI-edge component).

ij (A)

Total source junction current.

ijbot (A)

Junction current (bottom component).

ijgat (A)

Junction current (gate-edge component).

ijsti (A)

Junction current (STI-edge component).

si (A²/Hz)

Total junction current noise spectral density.

vrs (V)

Voltage across series resistor.

sf (A²/Hz)

Total junction flicker noise spectral density.

sr (A²/Hz)

Total series resistor thermal noise spectral density.

rseries (V/A)

Series resistor.

qrr (C)

Recovery charge.