Component Statements

Model Definition

model modelName utsoi2 parameter=value ...

Instance Definition

Name  d  g  s  b  [Tnode] ModelName parameter=value ...

Instance Parameters

1	`l=1.0e-6`	Channel length(m).
2	`w=1.0e-6`	Channel width(m).
3	`asource=1.0e-12`	Source region area (m^2).
4	`adrain=1.0e-12`	Drain region area (m^2).
5	`psource=1.0e-6`	Source region perimeter (m).
6	`pdrain=1.0e-6`	Drain region perimeter (m).
7	`sa=0.0`	Distance between OD-edge and poly at source side(m).
8	`sb=0.0`	Distance between OD-edge and poly at drain side(m).
9	`sd=0.0`	Distance between neighboring fingers(m).
10	`nf=1.0`	Number of fingers.
11	`mult=1.0`	Number of devices in parallel.
12	`m=1.0`	Number of devices in parallel.
13	`delvto=0.0`	Threshold voltage shift parameter (V).
14	`factuo=1.0`	Low-field mobility pre-factor.
15	`trise=0.0`	Temperature rise from ambient.
16	`isnoisy=yes`	Should device generate noise. Possible values are `yes` and `no`.
17	`dtemp`	Alias for trise.

Model Parameters

1	`swscale=0.0`	Parameter setting mode (local=0, global=1).
2	`version=2.00`	Model version number. Available versions are 2.00, 2.10, 2.11, 2.20, and 2.30. The default version is 2.00.
3	`swclipchk=0.0`	Flag for checking of parameters clipping (without=0, with=1).
4	`swsubdep=0.0`	Flag for substrate depletion model (without=0, with=1).
5	`swigate=0.0`	Flag for gate current (without=0, with=1).
6	`swgidl=0.0`	Flag for GIDL current (without=0, with=1).
7	`swshe=0.0`	Flag for self-heating effect (without=0, with=1).
8	`swign=1.0`	Flag for induced gate noise model (without=0, with=1).
9	`swjunasym=0.0`	Flag for source/drain junction asymmetry (without=0, with=1).
10	`qmc=1.0`	Quantum correction factor (no correction=0, full correction=1).
11	`type=1.0`	Channel type parameter, +1\|n=NMOS -1\|p=PMOS. Possible values are `p` and `n`.
12	`tr=21.0 C`	Nominal temperature.
12	`tref=21.0`	alias of TR, Nominal temperature (C).
13	`tmax=150.0`	Maximum self-heating temperature elevation (C).
14	`toxe=2.0e-09`	Front gate equivalent oxide thickness (m).
15	`tsi=1.0e-08`	Silicon or SiGe film thickness (m).
16	`xge=0.0`	Fraction of Ge content in the channel.
17	`tbox=1.0e-07`	Back gate oxide thickness (m).
18	`nch=0.0`	Thin film doping (n-type=negative value, p-type=positive value) (cm^-3).
19	`nsub=3.0e18`	Substrate doping (n-type=negative value, p-type=positive value) (cm^-3).
20	`ct=0.0`	Interface states factor.
21	`toxp=2.0e-09`	Front gate physical oxide thickness (m).
22	`nov=1.0e20`	Effective doping of overlap-ldd regions (no doping effect=0) (cm^-3).
23	`novd=1.0e20`	Effective doping of overlap-ldd regions ar drain side (cm^-3).
24	`vfb=0.0`	Flat-band voltage of the front gate at TR (V).
25	`vfbb=0.0`	Flat-band voltage of the back gate at TR (V).
26	`stvfb=0.0`	Temperature dependence of VFB and VFBB (V/K).
27	`cicf=1.0`	Long channel front interface coupling coefficient.
28	`cic=1.0`	Long channel back interface coupling coefficient.
29	`psce=0.0`	Short channel effect coefficient.
30	`psceb=1.0`	Short channel back to front interface asymmetry factor.
31	`pscedl=0.0`	Short channel modulation coefficient due to Leff variation.
32	`nsddc=1.0e22`	Source/Drain effective doping level for DC model (cm^-3).
33	`pscedlb=0.0`	Back bias dependence of short channel effect modulation.
34	`pnce=0.0`	Narrow channel effect on body factor.
35	`cf=0.0`	DIBL parameter.
36	`cfb=1.0`	DIBL back-to-front interface asymmetry factor.
37	`stcf=0.0`	Temperature dependence of CF, with same scaling as CF.
38	`cfd=0.2`	Drain voltage dependence parameter of DIBL (V).
39	`cfdl=0.0`	DIBL modulation coefficient due to Leff variation.
40	`cfdlb=0.0`	Back bias dependence of DIBL modulation.
41	`betn=5.0e-2`	Front channel aspect ratio times zero-field mobility (m^2/V/s).
42	`betnb=1.0`	Back channel over front channel zero-field mobility ratio.
43	`stbet=1.5`	Temperature dependence of BETN.
44	`cs=0.0`	Remote Coulomb scattering parameter at TR.
45	`csfi=0.0`	Field dependence of Coulomb scattering at front interface.
46	`csbi=0.0`	Field dependence of Coulomb scattering at back interface.
47	`stcs=0.0`	Temperature dependence of CS.
48	`thecs=1.5`	Remote Coulomb scattering exponent at TR.
49	`stthecs=0.0`	Temperature dependence of THECS.
50	`csthr=2.0`	Remote Coulomb scattering threshold level.
51	`csthrb=1.0`	Remote Coulomb scattering threshold asymmetry parameter.
52	`mue=0.0`	Front channel mobility reduction coefficient at TR (cm/MV).
53	`stmue=0.0`	Temperature dependence of MUE.
54	`themu=1.5`	Front channel mobility reduction exponent at TR.
55	`stthemu=0.0`	Temperature dependence of THEMU.
56	`xcor=0.0`	Front channel non-universality factor (V^-1).
57	`xcorb=1.0`	Asymmetry term of non-universality factor.
58	`stxcor=0.0`	Temperature dependence of XCOR.
59	`feta=1.0`	Effective field parameter.
60	`rs=30.0`	Source/Drain series resistance at TR (Ohm).
61	`rsig=0.0`	Source/Drain extension resistance coefficient.
62	`strs=0.0`	Temperature dependence of RS.
63	`rsg=0.0`	Transverse electric field dependence of RS.
64	`thersg=2.0`	Transverse electric field dependence exponent of RS.
65	`rsb=0.0`	Back bias dependence of RS.
66	`thesat=0.0`	Velocity saturation parameter at TR (V^-1).
67	`stthesat=(-0.1)`	Temperature dependence of THESAT.
68	`thesatg=0.0`	Front gate bias dependence of velocity saturation.
69	`thesatb=0.0`	Back gate bias dependence of velocity saturation.
70	`ax=8.0`	Linear/saturation transition exponent.
71	`alp=0.0`	CLM pre-factor.
72	`alp1=0.0`	CLM enhancement factor above threshold (V).
73	`alpb=0.0`	Back bias dependence of channel length modulation.
74	`vp=0.05`	CLM logarithm dependence factor (V).
75	`vpg=0.0`	Transverse electric field dependence of CLM logarithm factor.
76	`gco=0.0`	Gate tunneling energy adjustment in inversion.
77	`iginv=0.0`	Gate-to-channel current pre-factor (A).
78	`igovinv=0.0`	Gate-to-overlap current pre-factor in inversion (A).
79	`igovinvd=0.0`	Gate-to-overlap current pre-factor in inversion at drain side (A).
80	`igovacc=0.0`	Gate-to-overlap current pre-factor in accumulation (A).
81	`igovaccd=0.0`	Gate-to-overlap current pre-factor in accumulation at drain side (A).
82	`stig=0.0`	Temperature dependence of all gate currents.
83	`gc2ch=0.375`	Gate-to-channel current slope factor.
84	`gc3ch=0.063`	Gate-to-channel current curvature factor.
85	`gc2ov=0.375`	Gate current slope factor in overlaps.
86	`gc3ov=0.063`	Gate current curvature factor in overlaps.
87	`gc2ovinv=0.375`	Gate current slope factor for overlap regions in inversion mode.
88	`gc3ovinv=0.063`	Gate current curvature factor for overlap regions in inversion mode.
89	`gc2ovacc=0.375`	Gate current slope factor for overlap regions in accumulation mode.
90	`gc3ovacc=0.063`	Gate current curvature factor for overlap regions in accumulation mode.
91	`gcdov=0.0`	High drain voltage dependence of overlap gate current (V^-1).
92	`gcvdov=1.0`	Threshold of high drain voltage effect on overlap gate current (V).
93	`chib=3.1`	Tunneling barrier height (V).
94	`niginv=0.0`	Gate tunneling slope adjustment in subthreshold regime.
95	`agidl=0.0`	GIDL pre-factor (A/V^3).
96	`agidld=0.0`	GIDL pre-factor at drain side (A/V^3).
97	`bgidl=41.0`	GIDL probability factor at TR (V).
98	`bgidld=41.0`	GIDL probability factor at TR at drain side (V).
99	`stbgidl=0.0`	Temperature dependence of BGIDL (V/K).
100	`stbgidld=0.0`	Temperature dependence of BGIDL at drain side (V/K).
101	`cgidl=0.0`	Substrate bias dependence of GIDL (V^-1).
102	`cgidld=0.0`	Substrate bias dependence of GIDL at drain side (V^-1).
103	`dgidl=0.0`	High longitudinal field parameter of GIDL (V^-1).
104	`dgidld=0.0`	High longitudinal field parameter of GIDL at drain side (V^-1).
105	`areaq=1.0e-12`	Effective channel area for intrinsic CV (m^2).
106	`cgbov=0.0`	Oxide capacitance for gate-substrate overlap (F).
107	`nsdac=1.0e22`	Source/Drain effective doping level for AC model (cm^-3).
108	`fif=0.0`	Inner fringe capacitance prefactor.
109	`fsceac=0.0`	Short channel effect adjustment factor for charge model.
110	`cov=0.0`	Overlap capacitance per side (F).
111	`covd=0.0`	Overlap capacitance at drain side (F).
112	`covdl=0.0`	Overlap capacitance modulation coefficient due to Leff variation.
113	`covdlb=0.0`	Overlap capacitance modulation with back bias.
114	`dvfbov=0.0`	Overlap capacitance flat-band voltage adjustment (V).
115	`cfr=0.0`	Outer fringe capacitance per side (F).
116	`cfrd=0.0`	Outer fringe capacitance at drain side (F).
117	`csd=0.0`	Drain-source capacitance (F).
118	`csdbp=0.0`	Drain/source to substrate perimeter capacitance (F/m).
119	`rth=1.0e4`	Thermal resistance (K/W).
120	`strth=0.0`	Temperature dependence of RTH.
121	`cth=1.0e-11`	Thermal capacitance (J/K).
122	`fnt=1.0`	Thermal noise coefficient.
123	`nfa=8.0e+22`	First coefficient of flicker noise (V^-1/m^4).
124	`nfb=3.0e+07`	Second coefficient of flicker noise (V^-1/m^2).
125	`nfc=0.0`	Third coefficient of flicker noise (V^-1).
126	`nfe=0.0`	Flicker noise front transverse field effect coefficient.
127	`nfeb=0.0`	Flicker noise back transverse field effect coefficient.
128	`ef=1.0`	Frequency coefficient of flicker noise.
129	`lvaro=0.0`	Geometry-independent difference between physical and drawn gate lengths (m).
130	`lvarl=0.0`	Length dependence of LPS.
131	`lvarw=0.0`	Width dependence of LPS.
132	`lap=0.0`	Effective channel length reduction per side (m).
133	`wvaro=0.0`	Geometry-independent difference between physical and drawn field-oxide opening (m).
134	`wvarl=0.0`	Length dependence of WOD.
135	`wvarw=0.0`	Width dependence of WOD.
136	`wot=0.0`	Effective reduction of channel width per side (m).
137	`dlq=0.0`	Effective channel length additional offset for charge model (m).
138	`dwq=0.0`	Effective channel width additional offset for charge model (m).
139	`toxeo=2.0e-9`	Front gate equivalent oxide thickness (m).
140	`tsio=1.0e-8`	Silicon or SiGe film thickness (m).
141	`xgeo=0.0`	Fraction of Ge content in the channel.
142	`tboxo=1.0e-7`	Buried oxide thickness (m).
143	`ncho=0.0`	Thin film doping (n-type=negative value, p-type=positive value) (cm^-3).
144	`nsubo=3.0e18`	Substrate doping (n-type=negative value, p-type=positive value) (cm^-3).
145	`cto=0.0`	Interface states factor.
146	`toxpo=2.0e-09`	Front gate physical oxide thickness (m).
147	`novo=1.0e20`	Effective doping of overlap-ldd regions (no doping effect=0) (cm^-3).
148	`novdo=1.0e20`	Effective doping of overlap-ldd regions at drain side (cm^-3).
149	`vfbo=0.0`	Geometry-independent front gate flat-band voltage at TR (V).
150	`vfbl=0.0`	Length dependence of VFB (V).
151	`vfblexp=2.0`	Exponent describing length dependence of VFB.
152	`vfbl2=0.0`	Second order length dependence of VFB.
153	`vfblexp2=2.0`	Exponent of second order length dependence of VFB.
154	`vfbw=0.0`	Width dependence of VFB (V).
155	`vfblw=0.0`	Area dependence of VFB.
156	`vfbbo=0.0`	Geometry-independent back gate flat-band voltage at TR (V).
157	`vfblbo=1.0`	Roll-off back to front interface asymmetry factor.
158	`stvfbo=0.0`	Geometry-independent temperature dependence of VFB and VFBB (V/K).
159	`stvfbl=0.0`	Length dependence of STVFB.
160	`stvfbw=0.0`	Width dependence of STVFB.
161	`stvfblw=0.0`	Area dependence of STVFB.
162	`cicfo=1.0`	Long channel front interface coupling coefficient.
163	`cico=1.0`	Long channel back interface coupling coefficient.
164	`pscel=0.0`	Length dependence of PSCE.
165	`pscelexp=2.0`	Exponent describing length dependence of PSCE.
166	`pscew=0.0`	Width dependence of PSCE.
167	`pscebo=1.0`	Short channel back to front interface asymmetry factor.
168	`pscedll=0.0`	Short channel modulation coefficient due to Leff variation.
169	`pscedlw=0.0`	Width dependence of PSCEDL.
170	`nsddco=1.0e22`	Source/Drain effective doping level for DC model (cm^-3).
171	`pscedlbo=0.0`	Back bias dependence of short channel effect modulation.
172	`pncew=0.0`	Narrow channel effect on body factor for a width of WEN.
173	`cfl=0.0`	Length dependence of DIBL parameter.
174	`cflexp=2.0`	Exponent for length dependence of CF.
175	`cfw=0.0`	Width dependence of CF.
176	`cfbo=1.0`	DIBL back-to-front interface asymmetry factor.
177	`stcfo=0.0`	Temperature dependence of CF.
178	`stcfl=0.0`	Temperature dependence of CF, with same scaling as CF.
179	`cfdo=0.2`	Drain voltage dependence parameter of DIBL (V).
180	`cfdll=0.0`	DIBL modulation coefficient due to Leff variation.
181	`cfdlw=0.0`	Width dependence of CFDL.
182	`cfdlbo=0.0`	Back bias dependence of DIBL modulation.
183	`uo=5.0e-2`	Front channel zero-field mobility at TR (m^2/V/s).
184	`fbet1=0.0`	First length dependence modulation of BETN.
185	`fbet1w=0.0`	Width dependence of FBET1.
186	`lp1=1.0e-8`	First characteristic length of BETN scaling (m).
187	`lp1w=0.0`	Width dependence of LP1.
188	`fbet2=0.0`	Second length dependence modulation of BETN.
189	`lp2=1.0e-8`	Second characteristic length of BETN scaling (m).
190	`betw1=0.0`	First width dependence modulation of BETN.
191	`betw2=0.0`	Second width dependence modulation of BETN.
192	`wbet=1.0e-8`	Characteristic width of BETN scaling (m).
193	`betnl=0.0`	Second order length dependence of BETN.
194	`betnlexp=1.0`	Exponent for the second order length dependence of BETN.
195	`betnw=0.0`	Second order width dependence of BETN.
196	`betnbo=1.0`	Back channel over front channel zero-field mobility ratio.
197	`stbeto=1.5`	Geometry-independent temperature dependence of BETN.
198	`stbetl=0.0`	Length dependence of STBET.
199	`stbetw=0.0`	Width dependence of STBET.
200	`stbetlw=0.0`	Area dependence of STBET.
201	`cso=0.0`	Remote Coulomb scattering parameter at TR.
202	`csl=0.0`	Length dependence of CS.
203	`cslexp=1.0`	Exponent describing length dependence of CS.
204	`csw=0.0`	Width dependence of CS.
205	`cslw=0.0`	Area dependence of CS.
206	`csfio=0.0`	Field dependence of Coulomb scattering at front interface.
207	`csbio=0.0`	Field dependence of Coulomb scattering at back interface.
208	`stcso=0.0`	Temperature dependence of CS.
209	`stcsl=0.0`	Length dependence of STCS.
210	`stcsw=0.0`	Width dependence of STCS.
211	`stcslw=0.0`	Area dependence of STCS.
212	`thecso=1.5`	Remote Coulomb scattering exponent at TR.
213	`stthecso=0.0`	Temperature dependence of THECS.
214	`csthro=2.0`	Remote Coulomb scattering threshold level.
215	`csthrbo=1.0`	Remote Coulomb scattering threshold asymmetry parameter.
216	`mueo=0.0`	Front channel mobility reduction coefficient at TR (cm/MV).
217	`stmueo=0.0`	Temperature dependence of MUE.
218	`themuo=1.5`	Front channel mobility reduction exponent at TR.
219	`stthemuo=0.0`	Temperature dependence of THEMU.
220	`xcoro=0.0`	Geometry-independent part of non-universality factor (V^-1).
221	`xcorl=0.0`	Length dependence of XCOR.
222	`xcorlexp=1.0`	Exponent describing length dependence of XCOR.
223	`xcorw=0.0`	Width dependence of XCOR.
224	`xcorlw=0.0`	Area dependence of XCOR.
225	`xcorbo=1.0`	Asymmetry term of non-universality factor.
226	`stxcoro=0.0`	Temperature dependence of XCOR.
227	`fetao=1.0`	Effective field parameter.
228	`rsw1=30.0`	Source/Drain series resistance for channel width WEN at TR (Ohm).
229	`rsw2=0.0`	Higher-order width scaling of source/drain series resistance.
230	`rsigo=0.0`	Source/Drain extension resistance coefficient.
231	`strso=0.0`	Temperature dependence of RS.
232	`rsgo=0.0`	Transverse electric field dependence of RS.
233	`thersgo=2.0`	Transverse electric field dependence exponent of RS.
234	`rsbo=0.0`	Back bias dependence of RS.
235	`thesato=0.0`	Geometry-independent velocity saturation parameter at TR (V^-1).
236	`thesatl=0.0`	Length dependence of THESAT (s/m^2).
237	`thesatlexp=1.0`	Exponent for length dependence of THESAT.
238	`thesatw=0.0`	Width dependence of THESAT.
239	`thesatlw=0.0`	Area dependence of THESAT.
240	`stthesato=(-0.1)`	Geometry-independent temperature dependence of THESAT.
241	`stthesatl=0.0`	Length dependence of STTHESAT.
242	`stthesatw=0.0`	Width dependence of STTHESAT.
243	`stthesatlw=0.0`	Area dependence of STTHESAT.
244	`thesatgo=0.0`	Front gate bias dependence of velocity saturation.
245	`thesatbo=0.0`	Back gate bias dependence of velocity saturation.
246	`axo=8.0`	Geometry-independent linear/saturation transition exponent.
247	`axl=0.0`	Length dependence of AX.
248	`axlexp=1.0`	Exponent for length dependence of AX.
249	`alpl1=0.0`	Length dependence of CLM pre-factor ALP.
250	`alplexp=1.0`	Exponent for length dependence of ALP.
251	`alpl2=0.0`	Second order length dependence of ALP.
252	`alplexp2=2.0`	Exponent for second order length dependence of ALP.
253	`alpw=0.0`	Width dependence of ALP.
254	`alp1l1=0.0`	Length dependence of CLM enhancement factor above threshold ALP1 (V).
255	`alp1lexp=0.5`	Exponent for length dependence of ALP1.
256	`alp1l2=0.0`	Second order length dependence of ALP1.
257	`alp1lexp2=1.5`	Exponent for second order length dependence of ALP1.
258	`alp1w=0.0`	Width dependence of ALP1.
259	`alpbo=0.0`	Back bias dependence of channel length modulation.
260	`vpo=0.05`	CLM logarithm dependence factor (V).
261	`vpgo=0.0`	Transverse electric field dependence of CLM logarithm factor.
262	`gcoo=0.0`	Gate tunneling energy adjustment in inversion.
263	`iginvlw=0.0`	Gate to channel current pre-factor for a channel area of WEN.LEN (A).
264	`igovinvw=0.0`	Gate-to-overlap current pre-factor for a width of WEN in inversion (A).
265	`igovinvdw=0.0`	Gate-to-overlap current pre-factor for a width of WEN in inversion at drain side (A).
266	`igovaccw=0.0`	Gate-to-overlap current pre-factor for a width of WEN in accumulation (A).
267	`igovaccdw=0.0`	Gate-to-overlap current pre-factor for a width of WEN in accumulation at drain side (A).
268	`stigo=0.0`	Temperature dependence of all gate currents.
269	`gc2cho=0.375`	Gate-to-channel current slope factor.
270	`gc3cho=0.063`	Gate-to-channel current curvature factor.
271	`gc2ovo=0.375`	Gate current slope factor in overlaps.
272	`gc3ovo=0.063`	Gate current curvature factor in overlaps.
273	`gc2ovinvo=0.375`	Gate current slope factor for overlap regions in inversion mode.
274	`gc3ovinvo=0.063`	Gate current curvature factor for overlap regions in inversion mode.
275	`gc2ovacco=0.375`	Gate current slope factor for overlap regions in accumulation mode.
276	`gc3ovacco=0.063`	Gate current curvature factor for overlap regions in accumulation mode.
277	`gcdovl=0.0`	High drain voltage dependence of overlap gate current (V^-1).
278	`gcvdovo=1.0`	Threshold of high drain voltage effect on overlap gate current (V).
279	`chibo=3.1`	Tunneling barrier height (V).
280	`niginvo=0.0`	Gate tunneling slope adjustment in subthreshold regime.
281	`agidlw=0.0`	GIDL pre-factor for a width of WEN (A/V^3).
282	`agidldw=0.0`	GIDL pre-factor for a width of WEN at drain side (A/V^3).
283	`bgidlo=41.0`	GIDL probability factor at TR (V).
284	`bgidldo=41.0`	GIDL probability factor at TR at drain side (V).
285	`stbgidlo=0.0`	Temperature dependence of BGIDL (V/K).
286	`stbgidldo=0.0`	Temperature dependence of BGIDL at drain side (V/K).
287	`cgidlo=0.0`	Substrate bias dependence of GIDL (V^-1).
288	`cgidldo=0.0`	Substrate bias dependence of GIDL at drain side (V^-1).
289	`dgidll=0.0`	High longitudinal field parameter of GIDL (V^-1).
290	`dgidldl=0.0`	High longitudinal field parameter of GIDL at drain side (V^-1).
291	`cgbovo=0.0`	Geometry-independent gate-substrate overlap capacitance part (F).
292	`cgbovl=0.0`	Gate-substrate overlap capacitance for a length of LEN (F).
293	`nsdaco=1.0e22`	Source/Drain effective doping level for AC model (cm^-3).
294	`fifw=0.0`	Inner fringe capacitance prefactor for a width of WEN.
295	`fsceaco=0.0`	Short channel effect adjustment factor for charge model.
296	`lovo=0.0`	Overlap length for gate/source-drain hdd overlap capacitance (m).
297	`lovdo=0.0`	Overlap length for gate/drain hdd overlap capacitance (m).
298	`covdlo=0.0`	Overlap capacitance modulation coefficient due to Leff variation.
299	`covdlbo=0.0`	Overlap capacitance modulation with back bias.
300	`covdlw=0.0`	Width dependence of COVDL.
301	`dvfbovo=0.0`	Overlap capacitance flat-band voltage adjustment (V).
302	`cfro=0.0`	Corner related outer fringe capacitance (F).
303	`cfrdo=0.0`	Corner related outer fringe capacitance at drain side (F).
304	`cfrw=0.0`	Outer fringe capacitance per side for a width of WEN (F).
305	`cfrdw=0.0`	Outer fringe capacitance per side for a width of WEN at drain side (F).
306	`csdo=1.0`	Drain-source capacitance correction factor.
307	`csdbpo=0.0`	Drain/source to substrate perimeter capacitance (F/m).
308	`rtho=1.0e5`	Geometry-independent thermal resistance (K/W).
309	`rthl=0.0`	Length dependence of RTH.
310	`rthw=0.0`	Width dependence of RTH.
311	`rthlw=9.0`	Area dependence of RTH.
312	`strtho=0.0`	Temperature dependence of RTH.
313	`ctho=1.0e-12`	Geometry-independent thermal capacitance (J/K).
314	`lambtho=1.0e-7`	Characteristic length of lateral thermal coupling for multifinger devices (m).
315	`ftho=0.0`	First neighbour thermal coupling factor for multifinger devices.
316	`fnto=1.0`	Thermal noise coefficient.
317	`nfalw=8.0e22`	First coefficient of flicker noise (V^-1/m^4).
318	`nfblw=3.0e7`	Second coefficient of flicker noise (V^-1/m^2).
319	`nfclw=0.0`	Third coefficient of flicker noise (V^-1).
320	`nfeo=0.0`	Flicker noise front transverse field effect coefficient.
321	`nfebo=0.0`	Flicker noise back transverse field effect coefficient.
322	`efo=1.0`	Frequency coefficient of flicker noise.
323	`swstress=1.0`	Stress model selection flag (1= Previous STI stress model, 2= New channel stress model).
324	`saref=1.0e-6`	Reference distance between OD-edge and poly from one side (m).
325	`sbref=1.0e-6`	Reference distance between OD-edge and poly from other side (m).
326	`wlod=0.0`	Width parameter (m).
327	`kuo=0.0`	Mobility degradation/enhancement coefficient (m).
328	`kvsat=0.0`	Saturation velocity degradation/enhancement coefficient.
329	`tkuo=0.0`	Temperature dependence of KUO.
330	`lkuo=0.0`	Length dependence of KUO (m^LLODKUO).
331	`wkuo=0.0`	Width dependence of KUO (m^WLODKUO).
332	`pkuo=0.0`	Cross-term dependence of KUO (m^(LLODKUO+WLODKUO)).
333	`llodkuo=0.0`	Length parameter for UO stress effect.
334	`wlodkuo=0.0`	Width parameter for UO stress effect.
335	`kvtho=0.0`	Threshold shift parameter (Vm).
336	`lkvtho=0.0`	Length dependence of KVTHO (m^LLODVTH).
337	`wkvtho=0.0`	Width dependence of KVTHO (m^WLODVTH).
338	`pkvtho=0.0`	Cross-term dependence of KVTHO (m^(LLODVTH+WLODVTH)).
339	`llodvth=0.0`	Length parameter for VTH-stress effect.
340	`wlodvth=0.0`	Width parameter for VTH-stress effect.
341	`stetao=0.0`	Eta0 shift factor related to VTHO change (m).
342	`lodetao=1.0`	Eta0 shift modification factor for stress effect.
343	`strlambda=1.0e-7`	Relaxation characteristic length (m).
344	`stralpha=3.0`	Asymmetry parameter.
345	`strdvfbo=0.0`	Threshold shift parameter (V).
346	`strwdvfbo=0.0`	Width dependence of threshold shift parameter.
347	`strdcfl=0.0`	DIBL variation parameter.
348	`strruo=0.0`	Mobility degradation/enhancement coefficient.
349	`strtruo=0.0`	Temperature dependence of mobility degradation/enhancement coefficient.
350	`strrvsat=0.0`	Saturation velocity degradation/enhancement coefficient.
351	`vthmod`	Vth output selector. 'std' outputs model equation Vth. `vthcc` outputs constant current Vth, and may impact simulation performance. The default value is taken from the options parameter `vthmod`. Possible values are `std` and `vthcc`.
352	`ivth (A)`	Vth current parameter. The default value is taken from the options parameter `ivthn` or `ivthp`, depending on the type of the model.
353	`ivthw (m)`	Width offset for constant current Vth. The default value is taken from the options parameter `ivthw`.
354	`ivthl (m)`	Length offset for constant current Vth. The default value is taken from the options parameter `ivthl`.
355	`ivth_vdsmin (V)`	Minimum Vds in constant current Vth calculating. The default value is taken from the options parameter `ivth_vdsmin`.
356	`fntexc=0.0`	Excess noise coefficient.
357	`axl2=0.0`	Second order length dependence of AX.
358	`axlexp2=1.5`	Exponent for second order length dependence of AX.
359	`agidlo=0.0`	GIDL geometry-independent pre-factor (A/V^3).
360	`agidldo=0.0`	GIDL geometry-independent pre-factor at drain side (A/V^3).
361	`dgidlo=0.0`	High field geometry-independent parameter of GIDL (V^-1).
362	`dgidldo=0.0`	High field geometry-independent parameter of GIDL at drain side (V^-1).
363	`fntexcl=0.0`	Length dependence coefficient of excess noise.
364	`fntexclexp=2.0`	Length dependence exponent of excess noise.
365	`l=(30 1.0e-9)`	Designed Gate Length.
366	`nf=1`	Number of fins per finger.
367	`lmin=0.0 m`	Minimum channel length for which the model is valid.
368	`lmax=1.0 m`	Maximum channel length for which the model is valid.
369	`wmin=0.0 m`	Minimum channel width for which the model is valid.
370	`wmax=1.0 m`	Maximum channel width for which the model is valid.

Output Parameters

meff

Effective multiplicity factor (m-factor).

Operating-Point Parameters

1	`typeop`	MOSFET type.
2	`vth (V)`	Threshold voltage including back bias and drain bias effects.
3	`vds (V)`	Drain-Source DC voltage.
4	`vsb (V)`	Source-Bulk DC voltage.
5	`vdb (V)`	Drain-Bulk DC voltage.
6	`vgs (V)`	Gate-Source DC voltage.
7	`vgd (V)`	Gate-Drain DC voltage.
8	`vth_drive (V)`	Effective gate drive voltage including back bias and drain bias effects.
9	`vdsat (V)`	Drain saturation voltage.
10	`vdsat_marg (V)`	Saturation limit.
11	`ids (I)`	DC Channel current (excluding tunnel, GISL and GIDL currents).
12	`id (I)`	Total DC drain current.
13	`ig (I)`	Total DC gate current.
14	`is (I)`	Total DC source current.
15	`ib (I)`	Total DC bulk current.
16	`igidl (I)`	DC GIDL current.
17	`igisl (I)`	DC GISL current.
18	`igs (I)`	DC gate-source leakage current.
19	`igd (I)`	DC gate-drain leakage current.
20	`idb (I)`	DC drain-bulk current.
21	`isb (I)`	DC source-bulk current.
22	`gm`	DC transconductance.
23	`gmb`	DC bulk transconductance.
24	`go`	DC output conductance.
25	`gds`	DC output conductance.
26	`cdd (C)`	Drain capacitance.
27	`cdg (C)`	Drain to gate transcapacitance.
28	`cdb (C)`	Drain to bulk transcapacitance.
29	`cds (C)`	Drain to source transcapacitance.
30	`cgd (C)`	Gate to drain transcapacitance.
31	`cgg (C)`	Gate capacitance.
32	`cgb (C)`	Gate to bulk transcapacitance.
33	`cgs (C)`	Gate to source transcapacitance.
34	`cbd (C)`	Bulk to drain transcapacitance.
35	`cbg (C)`	Bulk to gate transcapacitance.
36	`cbb (C)`	Bulk capacitance.
37	`cbs (C)`	Bulk to source transcapacitance.
38	`csd (C)`	Source to drain transcapacitance.
39	`csg (C)`	Source to gate transcapacitance.
40	`csb (C)`	Source to bulk transcapacitance.
41	`css (C)`	Source capacitance.
42	`co (C)`	Output Drain-Source capacitance.
43	`cm (C)`	Capacitance element 1 for QS model.
44	`cmb (C)`	Capacitance element 2 for QS model.
45	`cmx (C)`	Capacitance element 3 for QS model.
46	`tau1 (s)`	Time constant related to NQS first frequency pole.
47	`fqslim (Hz)`	QS model frequency limit.
48	`tk`	MOSFET device temperature.
49	`dtsh`	Channel temperature elevation due to self-heating.
50	`self_gain`	Self gain.
51	`rout (R)`	Output resistance.
52	`vearly (V)`	Equivalent early voltage.
53	`beff`	Gain factor.
54	`ft`	Unity gain frequency.
55	`rgate (R)`	Gate resistance.
56	`gmoveri`	Gm over Id.
57	`gmoverid`	Gm over Id.
58	`pwr (W)`	Power dissipation.
59	`region`	Estimated operating region. Spectre outputs a number (0-4) in a raw file. Possible values are `off`, `triode`, `sat`, `subth`, and `breakdown`.
60	`opdef`	1: Device Physics notation. 2: Circuit Simulator notation.
61	`ctype`	Flag for channel type of MOSFET. 1: NMOS. -1: PMOS.
62	`sdop`	Operation mode related to channel type and drain-source voltage sign. Possible values are `Forward` and `Reverse`.
63	`sdint`	Flag for source drain interchange. 1: No S-D interchange, -1: S-D interchange.
64	`cjd (C)`	Total drain-bulk junction capacitance, including bottom and sidewall regions.
65	`cjs (C)`	Total source-bulk junction capacitance, including bottom and sidewall regions.
66	`vth0 (V)`	Zero-bias threshold voltage, excluding back-bias (body effect) and drain-bias effect (DIBL).

Parameter Index

In the following index, I refers to instance parameters, M refers to the model parameters section, O refers to the output parameters section, and OP refers to the operating point parameters section. The number indicates where to look in the appropriate section to find the description for that parameter. For example, a reference of M-35 means the 35th model parameter.

adrain I-4	csthr M-50	m I-12	stthecs M-49
agidl M-95	csthrb M-51	meff O-1	stthecso M-213
agidld M-96	csthrbo M-215	mue M-52	stthemu M-55
agidldw M-282	csthro M-214	mueo M-216	stthemuo M-219
agidlw M-281	csw M-204	mult I-11	stthesat M-67
alp M-71	ct M-20	nch M-18	stthesatl M-241
alp1 M-72	cth M-121	ncho M-143	stthesatlw M-243
alp1l1 M-254	ctho M-313	nf I-10	stthesato M-240
alp1l2 M-256	cto M-145	nfa M-123	stthesatw M-242
alp1lexp M-255	delvto I-13	nfalw M-317	stvfb M-26
alp1lexp2 M-257	dgidl M-103	nfb M-124	stvfbl M-159
alp1w M-258	dgidld M-104	nfblw M-318	stvfblw M-161
alpb M-73	dgidldl M-290	nfc M-125	stvfbo M-158
alpbo M-259	dgidll M-289	nfclw M-319	stvfbw M-160
alpl1 M-249	dlq M-137	nfe M-126	stxcor M-58
alpl2 M-251	dtsh OP-40	nfeb M-127	stxcoro M-226
alplexp M-250	dvfbov M-114	nfebo M-321	swclipchk M-3
alplexp2 M-252	dvfbovo M-301	nfeo M-320	swgidl M-6
alpw M-253	dwq M-138	niginv M-94	swigate M-5
areaq M-105	ef M-128	niginvo M-280	swign M-8
asource I-3	efo M-322	nov M-22	swjunasym M-9
ax M-70	factuo I-14	novd M-23	swscale M-1
axl M-247	fbet1 M-184	novdo M-148	swshe M-7
axlexp M-248	fbet1w M-185	novo M-147	swstress M-323
axo M-246	fbet2 M-188	nsdac M-107	swsubdep M-4
beff OP-44	feta M-59	nsdaco M-293	tbox M-17
betn M-41	fetao M-227	nsddc M-32	tboxo M-142
betnb M-42	fif M-108	nsddco M-170	thecs M-48
betnbo M-196	fifw M-294	nsub M-19	thecso M-212
betnl M-193	fnt M-122	nsubo M-144	themu M-54
betnlexp M-194	fnto M-316	pdrain I-6	themuo M-218
betnw M-195	fsceac M-109	pkuo M-332	thersg M-64
betw1 M-190	fsceaco M-295	pkvtho M-338	thersgo M-233
betw2 M-191	ft OP-45	pnce M-34	thesat M-66
bgidl M-97	ftho M-315	pncew M-172	thesatb M-69
bgidld M-98	gc2ch M-83	psce M-29	thesatbo M-245
bgidldo M-284	gc2cho M-269	psceb M-30	thesatg M-68
bgidlo M-283	gc2ov M-85	pscebo M-167	thesatgo M-244
cbb OP-33	gc2ovacc M-89	pscedl M-31	thesatl M-236
cbd OP-31	gc2ovacco M-275	pscedlb M-33	thesatlexp M-237
cbg OP-32	gc2ovinv M-87	pscedlbo M-171	thesatlw M-239
cbs OP-34	gc2ovinvo M-273	pscedll M-168	thesato M-235
cdb OP-25	gc2ovo M-271	pscedlw M-169	thesatw M-238
cdd OP-23	gc3ch M-84	pscel M-164	tk OP-39
cdg OP-24	gc3cho M-270	pscelexp M-165	tkuo M-329
cds OP-26	gc3ov M-86	pscew M-166	tmax M-13
cf M-35	gc3ovacc M-90	psource I-5	toxe M-14
cfb M-36	gc3ovacco M-276	pwr OP-48	toxeo M-139
cfbo M-176	gc3ovinv M-88	qmc M-10	toxp M-21
cfd M-38	gc3ovinvo M-274	region OP-49	toxpo M-146
cfdl M-39	gc3ovo M-272	rgate OP-46	tr M-12
cfdlb M-40	gcdov M-91	rout OP-42	trise I-15
cfdlbo M-182	gcdovl M-277	rs M-60	tsi M-15
cfdll M-180	gco M-76	rsb M-65	tsio M-140
cfdlw M-181	gcoo M-262	rsbo M-234	type M-11
cfdo M-179	gcvdov M-92	rsg M-63	typeop OP-1
cfl M-173	gcvdovo M-278	rsgo M-232	uo M-183
cflexp M-174	gds OP-22	rsig M-61	vds OP-3
cfr M-115	gm OP-20	rsigo M-230	vdsat OP-7
cfrd M-116	gmb OP-21	rsw1 M-228	vdsat_marg OP-8
cfrdo M-303	gmoverid OP-47	rsw2 M-229	vearly OP-43
cfrdw M-305	ib OP-13	rth M-119	version M-2
cfro M-302	id OP-10	rthl M-309	vfb M-24
cfrw M-304	idb OP-18	rthlw M-311	vfbb M-25
cfw M-175	ids OP-9	rtho M-308	vfbbo M-156
cgb OP-29	ig OP-11	rthw M-310	vfbl M-150
cgbov M-106	igd OP-17	sa I-7	vfbl2 M-152
cgbovl M-292	igidl OP-14	saref M-324	vfblbo M-157
cgbovo M-291	iginv M-77	sb I-8	vfblexp M-151
cgd OP-27	iginvlw M-263	sbref M-325	vfblexp2 M-153
cgg OP-28	igisl OP-15	sd I-9	vfblw M-155
cgidl M-101	igovacc M-80	self_gain OP-41	vfbo M-149
cgidld M-102	igovaccd M-81	stbet M-43	vfbw M-154
cgidldo M-288	igovaccdw M-267	stbetl M-198	vgs OP-5
cgidlo M-287	igovaccw M-266	stbetlw M-200	vp M-74
cgs OP-30	igovinv M-78	stbeto M-197	vpg M-75
chib M-93	igovinvd M-79	stbetw M-199	vpgo M-261
chibo M-279	igovinvdw M-265	stbgidl M-99	vpo M-260
cic M-28	igovinvw M-264	stbgidld M-100	vsb OP-4
cicf M-27	igs OP-16	stbgidldo M-286	vth OP-2
cicfo M-162	is OP-12	stbgidlo M-285	vth_drive OP-6
cico M-163	isb OP-19	stcf M-37	vthmod M-351
cov M-110	isnoisy I-16	stcfl M-178	w I-2
covd M-111	ivth M-352	stcfo M-177	wbet M-192
covdl M-112	ivth_vdsmin M-355	stcs M-47	wkuo M-331
covdlb M-113	ivthl M-354	stcsl M-209	wkvtho M-337
covdlbo M-299	ivthw M-353	stcslw M-211	wlod M-326
covdlo M-298	kuo M-327	stcso M-208	wlodkuo M-334
covdlw M-300	kvsat M-328	stcsw M-210	wlodvth M-340
cs M-44	kvtho M-335	stetao M-341	wot M-136
csb OP-37	l I-1	stig M-82	wvarl M-134
csbi M-46	lambtho M-314	stigo M-268	wvaro M-133
csbio M-207	lap M-132	stmue M-53	wvarw M-135
csd M-117	lkuo M-330	stmueo M-217	xcor M-56
csd OP-35	lkvtho M-336	stralpha M-344	xcorb M-57
csdbp M-118	llodkuo M-333	strdcfl M-347	xcorbo M-225
csdbpo M-307	llodvth M-339	strdvfbo M-345	xcorl M-221
csdo M-306	lodetao M-342	strlambda M-343	xcorlexp M-222
csfi M-45	lovdo M-297	strruo M-348	xcorlw M-224
csfio M-206	lovo M-296	strrvsat M-350	xcoro M-220
csg OP-36	lp1 M-186	strs M-62	xcorw M-223
csl M-202	lp1w M-187	strso M-231	xge M-16
cslexp M-203	lp2 M-189	strth M-120	xgeo M-141
cslw M-205	lvarl M-130	strtho M-312
cso M-201	lvaro M-129	strtruo M-349
css OP-38	lvarw M-131	strwdvfbo M-346

Return to top

Spectre Circuit Simulator Components and Device Models ReferenceProduct Version 23.1, June 2023