Geometrical dependences, stress effects and junction asymmetry
Scaling Equations
Effective Dimension
Introduction of the number of fingers.
Effective length and width for current model.
Effective length and width of charge model.
Effective length and width for self heating.
Process Parameters
Gate-to-interface coupling parameters
Drain Induced Barrier Lowering Parameters
Mobility Parameters
UO is integrated into GE. This changes the signification of the THESAT related global parameters, as detailed in the Velocity Saturation Parameters section.
Series Resistance Parameters
Velocity Saturation Parameters
Since UO has been included in GE (see (Mobility Parameters), THESATL, in UTSOI2, is closely related to the saturation velocity itself.
Saturation and Channel Length Modulation Parameters
Gate Current Parameters
Unlike in UTSOI1, gate currents in overlap regions are not linked with LOVO in UTSOI2.
Gate Induced Drain/Source Leakage (GIDL/GISL) Parameters
For gate currents, GIDL/GISL currents are not linked with LOVO in UTSOI2, as compared to UTSOI1.
Charge Model Parameters
Self-heating Parameters
Noise Model Parameters
Stress Model
Effective SA/SB-related Parameters
Modification of Mobility-related Parameters
Modification of Threshold Voltage-related Parameters
Asymmetric Junctions
After the calculations described Scaling Equations and Stress Model, local parameters are clipped according to the min/max values of the parameters.
Then, if the switch parameter SWJUNASYM is equal to 0, drain and source junctions are assumed symmetrical and all parameters related to the drain junction are overwritten by their source side counterparts.
If SWJUNASYM = 1, the parameters related to the drain side are kept unchanged.
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