1
|
version=101.0
|
The model parameter "version" only accepts a real number value, like 101.0 for version=101.0. The available versions now are 101.0, 101.1, 101.2 and 101.3.
|
2
|
tnom=27.0
|
Nominal Temperature in degree Celsius.
|
3
|
tbar=2.5e-8
|
Barrier layer thickness.
|
4
|
epsilon=10.66e-11
|
Dielectric Permittivity of AlGaN layer.
|
5
|
voff=(-2.0)
|
Cut-off voltage.
|
6
|
u0=170.0e-3
|
Low field mobility.
|
7
|
ua=0.0e-9
|
Mobility Degradation coefficient first order.
|
8
|
ub=0.0e-18
|
Mobility Degradation coefficient second order.
|
9
|
vsat=1.9e5
|
Saturation Velocity.
|
10
|
delta=2.0
|
Exponent for Vdeff.
|
11
|
at=0.0
|
Temperature Dependence for saturation velocity.
|
12
|
ute=(-0.5)
|
Temperature dependence of mobility.
|
13
|
lambda=0.0
|
Channel Length Modulation Coefficient.
|
14
|
eta0=1.0e-9
|
DIBL Parameter.
|
15
|
vdscale=5.0
|
DIBL Scaling VDS.
|
16
|
kt1=0.0e-3
|
Temperature Dependence for Voff.
|
17
|
thesat=1.0
|
Velocity Saturation Parameter.
|
18
|
nfactor=0.5
|
Sub-voff Slope parameters.
|
19
|
cdscd=1.0e-3
|
Sub-voff Slope Change due to Drain Voltage.
|
20
|
gamma0i=2.12e-12
|
Schrodinger-Poisson solution parameter.
|
21
|
gamma1i=3.73e-12
|
Schrodinger-Poisson solution parameter.
|
22
|
imin=1.0e-15
|
Minimum Drain Current.
|
23
|
shmod=1
|
Switch to turn on and off self-heating model.
|
24
|
rth0=5.0
|
Thermal Resistance.
|
25
|
cth0=1.0e-9
|
Thermal Capacitance.
|
26
|
rdsmod=0
|
Switch for external source and drain resistances.
|
27
|
vsataccs=50.0e3
|
Saturation Velocity for access region: Source Side.
|
28
|
ns0accs=5.0e17
|
2-DEG Charge Density in per square meter in Source access region.
|
29
|
ns0accd=5.0e17
|
2-DEG Charge Density in per square meter in Drain access region.
|
30
|
k0accs=0.0
|
Vg dependence parameter of source side access region 2-DEG charge density.
|
31
|
k0accd=0.0
|
Vg dependence parameter of drain side access region 2-DEG charge density.
|
32
|
u0accs=155e-3
|
Access region mobility source-side.
|
33
|
u0accd=155e-3
|
Access region mobility drain-side.
|
34
|
mexpaccs=2.0
|
Exponent for access region resistance model.
|
35
|
mexpaccd=2.0
|
Exponent for access region resistance model.
|
36
|
lsg=1.0e-6
|
Length of Source-Gate Access Region.
|
37
|
ldg=1.0e-6
|
Length of Drain-Gate Access Region or Length of drain side access region.
|
38
|
rsc=1.0e-4
|
Source Contact Resistance.
|
39
|
rdc=1.0e-4
|
Drain Contact Resistance.
|
40
|
kns0=0.0
|
Temperature Dependence for 2-DEG charge density at access region.
|
41
|
ats=0.0
|
Temperature Dependence for saturation velocity at access region.
|
42
|
utes=0.0
|
Temperature dependence of mobility at access region: Source Side.
|
43
|
uted=0.0
|
Temperature dependence of mobility at access region: Drain Side.
|
44
|
krsc=0.0
|
Temperature dependence of Source Contact Resistance.
|
45
|
krdc=0.0
|
Temperature dependence of Drain Contact Resistance.
|
46
|
gatemod=0
|
Model Switch to turn on and off the gate current formulations.
|
47
|
njgs=2.5
|
Gate-source junction diode current ideality factor.
|
48
|
njgd=2.5
|
Gate-drain junction diode current ideality factor.
|
49
|
rnjgs=80.0
|
Gate-source junction diode rev. current slope factor.
|
50
|
rnjgd=80.0
|
Gate-drain junction diode rev. current slope factor.
|
51
|
igsdio=1.0
|
Gate-source junction diode saturation current.
|
52
|
igddio=1.0
|
Gate-drain junction diode saturation current.
|
53
|
rigsdio=1.0e-15
|
Gate-source junction diode rev. current frenkel-poole multiplier.
|
54
|
rigddio=1.0e-15
|
Gate-drain junction diode rev. current frenkel-poole multiplier.
|
55
|
vbis=1e-4
|
Gate-source junction diode built-in voltage.
|
56
|
vbid=1e-4
|
Gate-drain junction diode built-in voltage.
|
57
|
ebreaks=0.0
|
Fitting parameter for large rev bias gate current.
|
58
|
ebreakd=0.0
|
Fitting parameter for large rev bias gate current.
|
59
|
ktgs=0.0
|
Temperature co-efficient of gate-source junction diode current.
|
60
|
ktgd=0.0
|
Temperature coefficient of gate-drain junction diode current.
|
61
|
rktgs=0.0
|
Temperature co-efficient of reverse gate-source junction diode current.
|
62
|
rktgd=0.0
|
Temperature coefficient of reverse gate-drain junction diode current.
|
63
|
ktvbis=0.0
|
Temperature coefficient for built-in voltage source side.
|
64
|
ktvbid=0.0
|
Temperature coefficient for built-in voltage drain side.
|
65
|
ktnjgs=0.0
|
Temperature coefficient forward slope source-side.
|
66
|
ktnjgd=0.0
|
Temperature coefficient forward slope drain-side.
|
67
|
ktrnjgs=0.0
|
Temperature coefficient reverse slope source-side.
|
68
|
ktrnjgd=0.0
|
Temperature coefficient reverse slope drain-side.
|
69
|
trapmod=0
|
Model Switch to turn on and off the dynamic trapping effects.
|
70
|
remi=1.0
|
Drain lag emmission resistance.
|
71
|
cglag=10.0e-6
|
Gate lag trapping capacitance.
|
72
|
remig=1.0
|
Gate lag trapping resistance.
|
73
|
arcap=0.0
|
Drain lag trap potential tuning parameter.
|
74
|
brcap=0.5
|
Drain lag trap potential tuning parameter.
|
75
|
arcapg=0.0
|
Gate lag trap potential tuning parameter.
|
76
|
brcapg=0.5
|
Gate lag trap potential tuning parameter.
|
77
|
vdlmax=20.0
|
Drain lag parameter for limiting parameter change.
|
78
|
vglmax=5.0
|
Gate lag parameter for limiting parameter change.
|
79
|
dlvoff=0e-4
|
Voff tuning due to drain lag.
|
80
|
glvoff=0e-4
|
Voff tuning due to gate lag.
|
81
|
glu0=0e-4
|
U0 tuning due to drain lag.
|
82
|
glvsat=0e-4
|
VSAT tuning due to gate lag.
|
83
|
dlns0s=0e-4
|
Source-side 2-deg tune due to drain lag.
|
84
|
dlns0d=0e-4
|
Drain-side 2-deg tune due to gate-lag.
|
85
|
cdlag=1.0e-6
|
Trap Network capacitance.
|
86
|
rdlag=1.0e6
|
Trap Network resistance.
|
87
|
idio=1.0e0
|
Saturation Current parameter for trap model.
|
88
|
atrapvoff=0.1
|
Voff change due to trapping effects.
|
89
|
btrapvoff=0.3
|
Voff change with input power due to trapping effects.
|
90
|
atrapeta0=0
|
DIBL change due to trapping effects.
|
91
|
btrapeta0=0.05
|
DIBL change with input power due to trapping effects.
|
92
|
atraprs=0.1
|
Rs change due to trapping effects.
|
93
|
btraprs=0.6
|
Rs change with input power due to trapping effects.
|
94
|
atraprd=0.5
|
Rd change due to trapping effects.
|
95
|
btraprd=0.6
|
Rd change with input power due to trapping effects.
|
96
|
rtrap1=1.0
|
Trap Network1 Resistance.
|
97
|
rtrap2=1.0
|
Trap Network2 Resistance.
|
98
|
ctrap1=10.0e-6
|
Trap Network1 Capacitance.
|
99
|
ctrap2=1.0e-6
|
Trap Network2 Capacitance.
|
100
|
a1=0.1
|
Multiplication factor [1st network].
|
101
|
vofftr=1.0e-9
|
Trap contribution to voff [2nd network].
|
102
|
cdscdtr=1.0e-15
|
Trap contribution to cdscd [2nd network].
|
103
|
eta0tr=1.0e-15
|
Trap contribution to DIBL [2nd network].
|
104
|
rontr1=1.0e-12
|
Trap contribution to RON [1st network].
|
105
|
rontr2=1.0e-13
|
Trap contribution to RON [2nd network].
|
106
|
rontr3=1.0e-13
|
Trap contribution to RON.
|
107
|
rtrap3=1.0
|
Trap Network Resistance.
|
108
|
ctrap3=1.0e-4
|
Trap Network Capacitance.
|
109
|
vatrap=10.0
|
Division factor for V[trap1].
|
110
|
wd=0.016
|
Weak dependence of vdlr1 on Vdg.
|
111
|
vdlr1=2.0
|
Slope for region one.
|
112
|
vdlr2=20.0
|
Slope for region two.
|
113
|
talpha=1.0
|
Temperature dependence Coefficient.
|
114
|
vtb=250.0
|
Break Point for Vdg effect on Von.
|
115
|
deltax=0.01
|
Smoothing parameter.
|
116
|
fastfpmod=0
|
Fast field-plate model formulations [0:Conventional FP model; 1: Fast model calculations].
|
117
|
fp1mod=0
|
Field Plate Model Selector [0:No FP; 1:Gate FP; 2:Source FP;].
|
118
|
fp1smod=0
|
Source-side Field Plate Model Selector [0:No FP; 1:Gate FP; 2:Source FP;].
|
119
|
fp2mod=0
|
Drain-side Field Plate Model Selector [0:No FP; 1:Gate FP; 2:Source FP;].
|
120
|
fp2smod=0
|
Source-side Field Plate Model Selector [0:No FP; 1:Gate FP; 2:Source FP;].
|
121
|
fp3mod=0
|
Drain-side Field Plate Model Selector [0:No FP; 1:Gate FP; 2:Source FP;].
|
122
|
fp3smod=0
|
Source-side Field Plate Model Selector [0:No FP; 1:Gate FP; 2:Source FP;].
|
123
|
fp4mod=0
|
Drain-side Field Plate Model Selector [0:No FP; 1:Gate FP; 2:Source FP;].
|
124
|
fp4smod=0
|
Source-side Field Plate Model Selector [0:No FP; 1:Gate FP; 2:Source FP;].
|
125
|
iminfp1=1.0e-15
|
Minimum Drain Current FP1 region.
|
126
|
vofffp1=(-25.0)
|
voff for FP1.
|
127
|
ktfp1=50.0e-3
|
Temperature Dependence for vofffp1.
|
128
|
u0fp1=100e-3
|
FP1 region mobility.
|
129
|
vsatfp1=100e+3
|
Saturation Velocity of FP1 region.
|
130
|
nfactorfp1=0.5
|
Sub-voff Slope parameters for FP1.
|
131
|
cdscdfp1=0.0
|
Sub-voff Slope Change due to Drain Voltage for FP1.
|
132
|
eta0fp1=1.0e-9
|
DIBL Parameter for FP1.
|
133
|
vdscalefp1=10.0
|
DIBL Scaling VDS for FP1.
|
134
|
gamma0fp1=2.12e-12
|
Schrodinger-Poisson solution parameter for FP1.
|
135
|
gamma1fp1=3.73e-12
|
Schrodinger-Poisson solution parameter for FP1.
|
136
|
iminfp2=1.0e-15
|
Minimum Drain Current FP2 region.
|
137
|
vofffp2=(-50.0)
|
voff for FP2.
|
138
|
ktfp2=50.0e-3
|
Temperature Dependence for vofffp2.
|
139
|
u0fp2=100e-3
|
Carrier mobility of FP2 region.
|
140
|
vsatfp2=100e+3
|
Saturation velocity of FP2 region.
|
141
|
nfactorfp2=0.5
|
Sub-voff Slope parameters for FP2.
|
142
|
cdscdfp2=0.0
|
Sub-voff Slope Change due to Drain Voltage for FP2.
|
143
|
eta0fp2=1.0e-9
|
DIBL Parameter for FP2.
|
144
|
vdscalefp2=10.0
|
DIBL Scaling VDS for FP2.
|
145
|
gamma0fp2=2.12e-12
|
Schrodinger-Poisson solution parameter for FP2.
|
146
|
gamma1fp2=3.73e-12
|
Schrodinger-Poisson solution parameter for FP2.
|
147
|
iminfp3=1.0e-15
|
Minimum Drain Current FP3 region.
|
148
|
vofffp3=(-75.0)
|
voff for FP3.
|
149
|
ktfp3=50.0e-3
|
Temperature Dependence for vofffp3.
|
150
|
u0fp3=100e-3
|
FP3 region mobility.
|
151
|
vsatfp3=100e+3
|
Saturation Velocity of FP3 region.
|
152
|
nfactorfp3=0.5
|
Sub-voff Slope parameters for FP3.
|
153
|
cdscdfp3=0.0
|
Sub-voff Slope Change due to Drain Voltage for FP3.
|
154
|
eta0fp3=1.0e-9
|
DIBL Parameter for FP3.
|
155
|
vdscalefp3=10.0
|
DIBL Scaling VDS for FP3.
|
156
|
gamma0fp3=2.12e-12
|
Schrodinger-Poisson solution parameter for FP3.
|
157
|
gamma1fp3=3.73e-12
|
Schrodinger-Poisson solution parameter for FP3.
|
158
|
iminfp4=1.0e-15
|
Minimum Drain Current FP4 region.
|
159
|
vofffp4=(-100.0)
|
voff for FP4.
|
160
|
ktfp4=50.0e-3
|
Temperature Dependence for vofffp4.
|
161
|
u0fp4=100e-3
|
FP4 region mobility.
|
162
|
vsatfp4=100e+3
|
Saturation Velocity of FP4 region.
|
163
|
nfactorfp4=0.5
|
Sub-voff Slope parameters for FP4.
|
164
|
cdscdfp4=0.0
|
Sub-voff Slope Change due to Drain Voltage for FP4.
|
165
|
eta0fp4=1.0e-9
|
DIBL Parameter for FP4.
|
166
|
vdscalefp4=10.0
|
DIBL Scaling VDS for FP4.
|
167
|
gamma0fp4=2.12e-12
|
Schrodinger-Poisson solution parameter for FP4.
|
168
|
gamma1fp4=3.73e-12
|
Schrodinger-Poisson solution parameter for FP4.
|
169
|
cgso=0.0e-18
|
Gate-source overlap capacitance.
|
170
|
cgdo=0.0e-18
|
Gate-drain overlap capacitance.
|
171
|
cdso=0.0e-18
|
Cds capacitance parameter.
|
172
|
cgdl=0.0e-15
|
Vds bias dependence of parasitic gate drain overlap capacitance.
|
173
|
vdsatcv=100.0
|
Saturation voltage on drain side in CV Model.
|
174
|
cbdo=0.0e-15
|
Substrate capacitance parameter.
|
175
|
cbso=0.0e-15
|
Substrate capacitance parameter.
|
176
|
cbgo=0.0e-15
|
Substrate capacitance parameter.
|
177
|
cfg=0.0e-18
|
Fringing capacitance parameter.
|
178
|
cfd=0.0e-18
|
Fringing capacitance parameter.
|
179
|
cfgd=0.0e-13
|
Fringing capacitance parameter.
|
180
|
cfgdsm=1.0e-24
|
Capacitance smoothing parameter.
|
181
|
cfgd0=0.0e-12
|
Fringing capacitance parameter.
|
182
|
cj0=0.0e-15
|
Zero bias depletion capacitance.
|
183
|
vbi=0.9
|
Built in potential.
|
184
|
ktvbi=0.0
|
Temperature dependence of built in potential.
|
185
|
ktcfg=0.0e-3
|
Temperature dependence of Fringing capacitance.
|
186
|
ktcfgd=0.0e-3
|
Temperature dependence of Fringing capacitance.
|
187
|
mz=0.5
|
Grading factor of depletion capacitance.
|
188
|
aj=100.0e-3
|
Limiting factor of depletion capacitance in forward bias region.
|
189
|
dj=1.0
|
Fitting parameter.
|
190
|
adosi=0.0
|
Quantum mechanical effect pre-factor cum switch in inversion.
|
191
|
bdosi=1.0
|
Charge centroid parameter - slope of CV curve under QME in inversion.
|
192
|
qm0i=1.0e-3
|
Charge centroid parameter - starting point for QME in inversion.
|
193
|
adosfp1=0.0
|
Quantum mechanical effect pre-factor cum switch in inversion.
|
194
|
bdosfp1=1.0
|
Charge centroid parameter - slope of CV curve under QME in inversion.
|
195
|
qm0fp1=1.0e-3
|
Charge centroid parameter - starting point for QME in inversion.
|
196
|
adosfp2=0.0
|
Quantum mechanical effect pre-factor cum switch in inversion.
|
197
|
bdosfp2=1.0
|
Charge centroid parameter - slope of CV curve under QME in inversion.
|
198
|
qm0fp2=1.0e-3
|
Charge centroid parameter - starting point for QME in inversion.
|
199
|
adosfp3=0.0
|
Quantum mechanical effect pre-factor cum switch in inversion.
|
200
|
bdosfp3=1.0
|
Charge centroid parameter - slope of CV curve under QME in inversion.
|
201
|
qm0fp3=1.0e-3
|
Charge centroid parameter - starting point for QME in inversion.
|
202
|
adosfp4=0.0
|
Quantum mechanical effect pre-factor cum switch in inversion.
|
203
|
bdosfp4=1.0
|
Charge centroid parameter - slope of CV curve under QME in inversion.
|
204
|
qm0fp4=1.0e-3
|
Charge centroid parameter - starting point for QME in inversion.
|
205
|
cfp1scale=0.0
|
Coupling of charge under FP1.
|
206
|
cfp2scale=0.0
|
Coupling of charge under FP2.
|
207
|
cfp3scale=0.0
|
Coupling of charge under FP3.
|
208
|
cfp4scale=0.0
|
Coupling of charge under FP4.
|
209
|
csubscalei=0.0
|
Sub Capacitance scaling parameter.
|
210
|
csubscale1=0.0
|
Sub Capacitance scaling parameter.
|
211
|
csubscale2=0.0
|
Sub Capacitance scaling parameter.
|
212
|
csubscale3=0.0
|
Sub Capacitance scaling parameter.
|
213
|
csubscale4=0.0
|
Sub Capacitance scaling parameter.
|
214
|
rgatemod=0
|
Model Switch to turn on and off the gate resistance.
|
215
|
xgw=0.0
|
Distance from gate contact centre to dev edge.
|
216
|
rshg=1.0e-3
|
Gate sheet resistance.
|
217
|
fnmod=0
|
Switch to turn Flicker Noise Model ON [fnmod=1] or OFF [fnmod=0].
|
218
|
tnmod=0
|
Switch to turn Thermal Noise Model ON [tnmod=1] or OFF [tnmod=0].
|
219
|
noia=15.0e-12
|
Flicker Noise parameter.
|
220
|
noib=0.0
|
Flicker Noise parameter.
|
221
|
noic=0.0
|
Flicker Noise parameter.
|
222
|
ef=1
|
Exponent of frequency---Determines slope in log plot.
|
223
|
tnsc=1.0e27
|
Thermal noise scaling parameter.
|
224
|
gdsmin=1.0e-12
|
Shunt conduntance across channel and all field plates.
|
225
|
bvdsl=200.0
|
Drain-source breakdown due to punch-through.
|
226
|
asl=0.0
|
Breakdown model multiplier parameter.
|
227
|
nsl=10.0
|
Exponent in the breakdown model.
|
228
|
kasl=0.0
|
Temperature Dependence for asl parameters in breakdown.
|
229
|
knsl=0.0
|
Temperature Dependence for nsl parameters in breakdown.
|
230
|
kbvdsl=0.0
|
Temperature Dependence for bvdsl parameters in breakdown.
|
231
|
ngcon=1
|
Number of gate contacts.
|
232
|
dfp1=50.0e-9
|
Distance of FP1 from 2-DEG Charge.
|
233
|
lfp1=1.0e-6
|
Length of FP1.
|
234
|
dfp2=100.0e-9
|
Distance of FP2 from 2-DEG Charge.
|
235
|
lfp2=1.0e-6
|
Length of FP2.
|
236
|
dfp3=150.0e-9
|
Distance of FP3 from 2-DEG Charge.
|
237
|
lfp3=1.0e-6
|
Length of FP3.
|
238
|
dfp4=200.0e-9
|
Distance of FP4 from 2-DEG Charge.
|
239
|
lfp4=1.0e-6
|
Length of FP4.
|
240
|
trise=0.0 C
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Temperature rise from ambient, alias of dtemp. It served as the default value of instance trise .
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