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MVSG Model

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The MIT Virtual Source GaNFET (MVSG) model captures the device behavior under operating bias voltage.The device structure of GaN HEMT is shown in the figure below.

This chapter contains the following information about the MVSG model:

• Model Equations
  • Transistor drain current formulation
  • Transistor channel charge formulation
  • Gate current formulation
  • Charge trapping effects
  • Device-noise: RF- and phase-noise modeling
• Component Statements