l

1.0e-06 m

Channel length.

w

1.0e-06 m

Channel width.

asource

1.0e-12 m²

Source region area.

adrain

1.0e-12 m²

Drain region area.

psource

1.0e-06 m

Source region perimeter.

pdrain

1.0e-06 m

Drain region perimeter.

sa

0.0 m

Distance between OD-edge and poly at source side.

sb

0.0 m

Distance between OD-edge and poly at drain side.

sd

0.0 m

Distance between neighboring fingers.

nf

1

Number of fingers.

m

1.0

Number of devices in parallel.

delvto

0.0 V

Threshold voltage shift parameter.

factuo

1.0

Low-field mobility pre-factor.

trise

0.0

Temperature rise from ambient.

dtemp

0.0

Temperature rise from ambient.

isnoisy

yes

Should device generate noise.

swscale

0

Parameter set mode (local=0, global=1).

version

102.4

Model version.

swsubdep

0

Flag for substrate depletion model (without=0, with=1).

swigate

0

Flag for gate current (without=0, with=1).

swgidl

0

Flag for GIDL current (without=0, with=1).

swshe

0

Flag for self heating effect (without=0, with=1).

swign

1

Flag for induced gate noise model (without=0, with=1).

swjunasym

0

Flag for source/drain junction asymmetry (without=0, with=1).

swimpact

0

Flag for impact ionization current (without=0, with=1).

qmc

1.0

Quantum correction factor (no correction=0, full correction=1).

type

1

Channel type parameter, +1=NMOS -1=PMOS.Possible values are p and n.

tr

21.0 C

Nominal temperature.

tref

21.0 C

Alias of TR, nominal temperature.

tmax

150.0 C

Maximum self-heating temperature elevation.

vthmod

Vth output selector. 'std' outputs model equation Vth. 'vthcc' outputs constant current Vth, and may impact simulation performance. The default value is taken from the options parameter 'vthmod'.Possible values are std and vthcc.

ivth

0.0

Vth current parameter. The default value is taken from the options parameter 'ivthn' or 'ivthp', depending on the type of the model.

ivthw

0.0

Width offset for constant current Vth. The default value is taken from the options parameter 'ivthw'.

ivthl

0.0

Length offset for constant current Vth. The default value is taken from the options parameter 'ivthl'.

ivth_vdsmin

0.05

Minimum Vds in constant current Vth calculating. The default value is taken from the options parameter 'ivth_vdsmin'.

toxe

2.0e-09 m

Front gate equivalent oxide thickness.

tsi

1.0e-08 m

Silicon or SiGe film thickness.

xge

0.0

Fraction of Ge content in the channel.

tbox

1.0e-07 m

Buried oxide thickness.

nch

0.0 cm^-3

Thin film doping (n-type=negative value, p-type=positive value).

nsub

3.0e18 cm^-3

Substrate doping (n-type=negative value, p-type=positive value).

ct

0.0

Interface states factor.

toxp

2.0e-09 m

Front gate physical oxide thickness.

nov

1.0e20 cm^-3

Effective doping of overlap-ldd regions.

novd

1.0e20 cm^-3

Effective doping of overlap-ldd regions ar drain side.

vfb

0.0 V

Flat-band voltage of the front gate at TR.

vfbb

0.0 V

Flat-band voltage of the back gate at TR.

stvfb

0.0 V/K

Temperature dependence of VFB and VFBB.

cicf

1.0

Long channel front interface coupling coefficient.

cic

1.0

Long channel back interface coupling coefficient.

psce

0.0

Short channel effect coefficient.

psceb

1.0

Short channel back to front interface asymmetry factor.

nsddc

1.0e22 cm^-3

Source/Drain effective doping level for DC model.

pscedlb

0.0

Back bias dependence of short channel effect modulation.

pnce

0.0

Narrow channel effect on body factor.

cf

0.0

DIBL parameter.

cfb

1.0

DIBL back to front interface asymmetry factor.

stcf

0.0 1/K

Temperature dependence of CF, with same scaling as CF.

cfd

0.2 V

Drain voltage dependence parameter of DIBL.

cfdl

0.0

DIBL modulation coefficient due to Leff variation.

cfdlb

0.0

Back bias dependence of DIBL modulation.

betn

5.0e-02 m²/V/s

Front channel aspect ratio times zero-field mobility.

betnb

1.0

Back channel over front channel zero-field mobility ratio.

stbet

1.5

Temperature dependence of BETN.

cs

0.0

Remote Coulomb scattering parameter at TR.

csfi

0.0

Field dependence of Coulomb scattering at front interface.

csbi

0.0

Field dependence of Coulomb scattering at back interface.

stcs

0.0

Temperature dependence of CS.

thecs

1.5

Remote Coulomb scattering exponent at TR.

stthecs

0.0

Temperature dependence of THECS.

csthr

2.0

Remote Coulomb scattering threshold level.

csthrb

1.0

Remote Coulomb scattering threshold asymmetry parameter.

mue

0.0 cm/MV

Front channel mobility reduction coefficient at TR.

stmue

0.0

Temperature dependence of MUE.

themu

1.5

Front channel mobility reduction exponent at TR.

stthemu

0.0

Temperature dependence of THEMU.

xcor

0.0

Front channel non-universality factor.

xcorb

1.0

Asymmetry term of non-universality factor.

stxcor

0.0

Temperature dependence of XCOR.

feta

1.0

Effective field parameter.

rs

30.0 Ω

Source/Drain series resistance at TR.

rsig

0.0

Source/Drain extension resistance coefficient.

strs

0.0

Temperature dependence of RS.

rsg

0.0

Transverse electric field dependence of RS.

thersg

2.0

Transverse electric field dependence exponent of RS.

rsb

0.0

Back bias dependence of RS.

thesat

0.0 V^-1

Velocity saturation parameter at TR.

stthesat

(-0.1)

Temperature dependence of THESAT.

thesatg

0.0

Front gate bias dependence of velocity saturation.

thesatb

0.0

Back gate bias dependence of velocity saturation.

ax

8.0

Linear/saturation transition exponent.

alp

0.0

CLM pre-factor.

alp1

0.0 V

CLM enhancement factor above threshold.

alpb

0.0

Back bias dependence of channel length modulation.

vp

0.05 V

CLM logarithm dependence factor.

vpg

0.0

Transverse electric field dependence of CLM logarithm factor.

gco

0.0

Gate tunneling energy adjustment in inversion.

iginv

0.0 A

Gate to channel current pre-factor.

igovinv

0.0 A

Gate to overlap current pre-factor in inversion.

igovinvd

0.0 A

Gate to overlap current pre-factor in inversion at drain side.

igovacc

0.0 A

Gate to overlap current pre-factor in accumulation.

igovaccd

0.0 A

Gate to overlap current pre-factor in accumulation at drain side.

stig

0.0

Temperature dependence of all gate currents.

gc2ch

0.375

Gate to channel current slope factor.

gc3ch

0.063

Gate to channel current curvature factor.

gc2ovinv

0.375

Gate current slope factor for overlap regions in inversion mode.

gc3ovinv

0.063

Gate current curvature factor for overlap regions in inversion mode.

gc2ovacc

0.375

Gate current slope factor for overlap regions in accumulation mode.

gc3ovacc

0.063

Gate current curvature factor for overlap regions in accumulation mode.

gcdov

0.0 V^-1

High drain voltage dependence of overlap gate current.

gcvdov

1.0 V

Threshold of high drain voltage effect on overlap gate current.

chib

3.1 V

Tunneling barrier height.

niginv

0.0

Gate tunneling slope adjustment in subthreshold regime.

fnovinv

0.0 A

Extra gate to overlap current pre-factor in inversion.

fnovinvd

0.0 A

Extra gate to overlap current pre-factor in inversion at drain side.

gcovinvfn

0.2

Extra gate current slope factor for overlap regions in inversion mode.

stigfn

0.0

Temperature dependence of extra gate to overlap current.

agidl

0.0 A/V³

GIDL pre-factor.

agidld

0.0 A/V³

GIDL pre-factor at drain side.

bgidl

41.0 V

GIDL probability factor at TR.

bgidld

41.0 V

GIDL probability factor at TR at drain side.

stbgidl

0.0 V/K

Temperature dependence of BGIDL.

stbgidld

0.0 V/K

Temperature dependence of BGIDL at drain side.

cgidl

0.0 V^-1

Substrate bias dependence of GIDL.

cgidld

0.0 V^-1

Substrate bias dependence of GIDL at drain side.

dgidl

0.0 V^-1

High longitudinal field parameter of GIDL.

dgidld

0.0 V^-1

High longitudinal field parameter of GIDL at drain side.

a1

1.0

Impact ionization pre-factor.

a2

10.0

Impact ionization exponent at TR.

sta2

0.0

Temperature dependence of A2.

a3

1.0

Saturation voltage dependence of impact-ionization.

areaq

1.0e-12 m²

Effective channel area for intrinsic CV.

cgbov

0.0 F

Oxide capacitance for gate-substrate overlap.

nsdac

1.0e22 cm^-3

Source/Drain effective doping level for AC model.

fif

0.0

Inner fringe capacitance prefactor.

fsceac

0.0

Short channel effect adjustment factor for charge model.

cov

0.0 F

Overlap capacitance per side.

covd

0.0 F

Overlap capacitance at drain side.

covdl

0.0

Overlap capacitance modulation coefficient due to Leff variation.

covdlb

0.0

Overlap capacitance modulation with back bias.

dvfbov

0.0 V

Overlap capacitance flat-band voltage adjustment.

cfr

0.0 F

Outer fringe capacitance per side.

cfrd

0.0 F

Outer fringe capacitance at drain side.

csd

1.04e-18 F

Drain-source capacitance.

csdbp

0.0 F/m

Drain/source to substrate perimeter capacitance.

rth

1.0e04 K/W

Thermal resistance.

strth

0.0

Temperature dependence of RTH.

cth

1.0e-11 J/K

Thermal capacitance.

fnt

1.0

Thermal noise coefficient.

fntexc

0.0

Excess noise coefficient.

nfa

8.0e22 V^-1/m⁴

First coefficient of flicker noise.

nfb

3.0e07 V^-1/m²

Second coefficient of flicker noise.

nfc

0.0 V^-1

Third coefficient of flicker noise.

nfe

0.0

Flicker noise front transverse field effect coefficient.

nfeb

0.0

Flicker noise back transverse field effect coefficient.

ef

1.0

Frequency coefficient of flicker noise.

kdrift

1.0

Drift component parameter of NQS effect.

kdiff

1.0

Diffusion component parameter of NQS effect.

fracinv

1.0

Fraction of inversion charge for the second pole of the NQS transition.

kfracinv

1.0e-15

Second pole frequency coefficient of the NQS transition.

swnqs

0

Non-quasi-static model flag.

When model parameter SWNQS is set to 1 or 0, the NQS effect is open or closed, respectively.

lvaro

0.0 m

Geometry independent difference between physical and drawn gate lengths.

lvarl

0.0

Length dependence of LPS.

lvarw

0.0

Width dependence of LPS.

lap

0.0 m

Effective channel length reduction per side.

wvaro

0.0 m

Geometry-independent difference between physical and drawn field-oxide opening.

wvarl

0.0

Length dependence of WOD.

wvarw

0.0

Width dependence of WOD.

wot

0.0 m

Effective reduction of channel width per side.

dlq

0.0 m

Effective channel length additional offset for charge model.

dwq

0.0 m

Effective channel width additional offset for charge model.

toxeo

2.0e-09 m

Front gate equivalent oxide thickness.

tsio

1.0e-08 m

Silicon or SiGe film thickness.

xgeo

0.0

Fraction of Ge content in the channel.

tboxo

1.0e-07 m

Buried oxide thickness.

ncho

0.0 cm^-3

Thin film doping (n-type=negative value, p-type=positive value).

nsubo

3.0e18 cm^-3

Substrate doping (n-type=negative value, p-type=positive value).

cto

0.0

Interface states factor.

toxpo

2.0e-09 m

Front gate physical oxide thickness.

novo

1.0e20 cm^-3

Effective doping of overlap-ldd regions.

novdo

1.0e20 cm^-3

Effective doping of overlap-ldd regions at drain side.

vfbo

0.0 V

Geometry-independent front gate flat-band voltage at TR.

vfbl

0.0 V

Length dependence of VFB.

vfblexp

2.0

Exponent describing length dependence of VFB.

vfbl2

0.0

Second order length dependence of VFB.

vfblexp2

2.0

Exponent of second order length dependence of VFB.

vfbw

0.0 V

Width dependence of VFB.

vfblw

0.0 V

Area dependence of VFB.

vfbbo

0.0 V

Geometry-independent back gate flat-band voltage at TR.

vfblbo

0.0

Roll-off back to front interface asymmetry factor.

stvfbo

0.0 V/K

Geometry-independent temperature dependence of VFB and VFBB.

stvfbl

0.0

Length dependence of STVFB.

stvfbw

0.0

Width dependence of STVFB.

stvfblw

0.0

Area dependence of STVFB.

cicfo

1.0

Long channel front interface coupling coefficient.

cico

1.0

Long channel back interface coupling coefficient.

pscel

0.0

Length dependence of PSCE.

pscelexp

2.0

Exponent describing length dependence of PSCE.

pscew

0.0

Width dependence of PSCE.

pscebo

1.0

Short channel back to front interface asymmetry factor.

nsddco

1.0e22 cm^-3

Source/Drain effective doping level for DC model.

pscedlbo

0.0

Back bias dependence of short channel effect modulation.

pncew

0.0

Narrow channel effect on body factor for a width of WEN.

cfl

0.0

Length dependence of DIBL-parameter.

cflexp

2.0

Exponent for length dependence of CF.

cfw

0.0

Width dependence of CF.

cfbo

1.0

DIBL back to front interface asymmetry factor.

stcfl

0.0 1/K

Temperature dependence of CF, with same scaling as CF.

cfdo

0.2 V

Drain voltage dependence parameter of DIBL.

cfdll

0.0

DIBL modulation coefficient due to Leff variation.

cfdlw

0.0

Width dependence of CFDL.

cfdlbo

0.0

Back bias dependence of DIBL modulation.

uo

5.0e-02 m²/V/s

Front channel zero-field mobility at TR.

fbet1

0.0

First length dependence modulation of BETN.

fbet1w

0.0

Width dependence of FBET1.

lp1

1.0e-08 m

First characteristic length of BETN scaling.

lp1w

0.0

Width dependence of LP1.

fbet2

0.0

Second length dependence modulation of BETN.

lp2

1.0e-08 m

Second characteristic length of BETN scaling.

betw1

0.0

First width dependence modulation of BETN.

betw2

0.0

Second width dependence modulation of BETN.

wbet

1.0e-08 m

Characteristic width of BETN scaling.

betnbo

1.0

Back channel over front channel zero-field mobility ratio.

stbeto

1.5

Geometry independent temperature dependence of BETN.

stbetl

0.0

Length dependence of STBET.

stbetw

0.0

Width dependence of STBET.

stbetlw

0.0

Area dependence of STBET.

cso

0.0

Remote Coulomb scattering parameter at TR.

csl

0.0

Length dependence of CS.

cslexp

1.0

Exponent describing length dependence of CS.

csw

0.0

Width dependence of CS.

cslw

0.0

Area dependence of CS.

csfio

0.0

Field dependence of Coulomb scattering at front interface.

csbio

0.0

Field dependence of Coulomb scattering at back interface.

stcso

0.0

Temperature dependence of CS.

stcsl

0.0

Length dependence of STCS.

stcsw

0.0

Width dependence of STCS.

stcslw

0.0

Area dependence of STCS.

thecso

1.5

Remote Coulomb scattering exponent at TR.

stthecso

0.0

Temperature dependence of THECS.

csthro

2.0

Remote Coulomb scattering threshold level.

csthrbo

1.0

Remote Coulomb scattering threshold asymmetry parameter.

mueo

0.0 cm/MV

Front channel mobility reduction coefficient at TR.

stmueo

0.0

Temperature dependence of MUE.

themuo

1.5

Front channel mobility reduction exponent at TR.

stthemuo

0.0

Temperature dependence of THEMU.

xcoro

0.0

Geometry-independent part of non-universality factor.

xcorl

0.0

Length dependence of XCOR.

xcorlexp

1.0

Exponent describing length dependence of XCOR.

xcorw

0.0

Width dependence of XCOR.

xcorlw

0.0

Area dependence of XCOR.

xcorbo

1.0

Asymmetry term of non-universality factor.

stxcoro

0.0

Temperature dependence of XCOR.

fetao

1.0

Effective field parameter.

rsw1

30.0 Ω

Source/Drain series resistance for channel width WEN at TR.

rsw2

0.0

Higher-order width scaling of source/drain series resistance.

rsigo

0.0

Source/Drain extension resistance coefficient.

strso

0.0

Temperature dependence of RS.

rsgo

0.0

Transverse electric field dependence of RS.

thersgo

2.0

Transverse electric field dependence exponent of RS.

rsbo

0.0

Back bias dependence of RS.

thesato

0.0 s/m²

Geometry independent velocity saturation parameter at TR.

thesatl

0.0 s/m²

Length dependence of THESAT.

thesatlexp

1.0

Exponent for length dependence of THESAT.

thesatw

0.0

Width dependence of THESAT.

thesatlw

0.0

Area dependence of THESAT.

stthesato

(-0.1)

Geometry independent temperature dependence of THESAT.

stthesatl

0.0

Length dependence of STTHESAT.

stthesatw

0.0

Width dependence of STTHESAT.

stthesatlw

0.0

Area dependence of STTHESAT.

thesatgo

0.0

Front gate bias dependence of velocity saturation.

thesatbo

0.0

Back gate bias dependence of velocity saturation.

axo

8.0

Geometry independent linear/saturation transition exponent.

axl

0.0

Length dependence of AX.

axlexp

1.0

Exponent for length dependence of AX.

axl2

0.0

Second order length dependence of AX.

axlexp2

1.5

Exponent for second order length dependence of AX.

alpl1

0.0

Length dependence of CLM pre-factor ALP.

alplexp

1.0

Exponent for length dependence of ALP.

alpl2

0.0

Second order length dependence of ALP.

alplexp2

2.0

Exponent for second order length dependence of ALP.

alpw

0.0

Width dependence of ALP.

alp1l1

0.0 V

Length dependence of CLM enhancement factor above threshold ALP1.

alp1lexp

0.5

Exponent for length dependence of ALP1.

alp1l2

0.0

Second order length dependence of ALP1.

alp1lexp2

1.5

Exponent for second order length dependence of ALP1.

alp1w

0.0

Width dependence of ALP1.

alpbo

0.0

Back bias dependence of channel length modulation.

vpo

0.05 V

CLM logarithm dependence factor.

vpgo

0.0

Transverse electric field dependence of CLM logarithm factor.

gcoo

0.0

Gate tunneling energy adjustment in inversion.

iginvlw

0.0 A

Gate to channel current pre-factor for a channel area of WEN.LEN.

igovinvw

0.0 A

Gate to overlap current pre-factor for a width of WEN in inversion.

igovinvdw

0.0 A

Gate to overlap current pre-factor for a width of WEN in inversion at drain side.

igovaccw

0.0 A

Gate to overlap current pre-factor for a width of WEN in accumulation.

igovaccdw

0.0 A

Gate to overlap current pre-factor for a width of WEN in accumulation at drain side.

stigo

0.0

Temperature dependence of all gate currents.

gc2cho

0.375

Gate to channel current slope factor.

gc3cho

0.063

Gate to channel current curvature factor.

gc2ovinvo

0.375

Gate current slope factor for overlap regions in inversion mode.

gc3ovinvo

0.063

Gate current curvature factor for overlap regions in inversion mode.

gc2ovacco

0.375

Gate current slope factor for overlap regions in accumulation mode.

gc3ovacco

0.063

Gate current curvature factor for overlap regions in accumulation mode.

gcdovl

0.0 V^-1

High drain voltage dependence of overlap gate current.

gcvdovo

1.0 V

Threshold of high drain voltage effect on overlap gate current.

chibo

3.1 V

Tunneling barrier height.

niginvo

0.0

Gate tunneling slope adjustment in subthreshold regime.

fnovinvw

0.0 A

Extra gate to overlap current pre-factor for a width of WEN in inversion.

fnovinvdw

0.0 A

Extra gate to overlap current pre-factor for a width of WEN in inversion at drain side.

gcovinvfno

0.2

Extra gate current slope factor for overlap regions in inversion mode.

stigfno

0.0

Temperature dependence of extra gate to overlap current.

agidlo

0.0 A/V³

GIDL geometry independent pre-factor.

agidldo

0.0 A/V³

GIDL geometry independent pre-factor at drain side.

agidlw

0.0 A/V³

GIDL pre-factor for a width of WEN.

agidldw

0.0 A/V³

GIDL pre-factor for a width of WEN at drain side.

bgidlo

41.0 V

GIDL probability factor at TR.

bgidldo

41.0 V

GIDL probability factor at TR at drain side.

stbgidlo

0.0 V/K

Temperature dependence of BGIDL.

stbgidldo

0.0 V/K

Temperature dependence of BGIDL at drain side.

cgidlo

0.0 V^-1

Substrate bias dependence of GIDL.

cgidldo

0.0 V^-1

Substrate bias dependence of GIDL at drain side.

dgidlo

0.0 V^-1

High field geometry independent parameter of GIDL.

dgidldo

0.0 V^-1

High field geometry independent parameter of GIDL at drain side.

dgidll

0.0 V^-1

High longitudinal field parameter of GIDL.

dgidldl

0.0 V^-1

High longitudinal field parameter of GIDL at drain side.

a1o

1.0

Geometry independent impact ionization pre-factor.

a1l

0.0

Length dependence of A1.

a1w

0.0

Width dependence of A1.

a2o

10.0

Impact ionization exponent at TR.

sta2o

0.0

Temperature dependence of A2.

a3o

1.0

Geometry independent saturation-voltage dependence of II.

a3l

0.0

Length dependence of A3.

a3w

0.0

Width dependence of A3.

cgbovo

0.0 F

Geometry independent gate-substrate overlap capacitance part.

cgbovl

0.0 F

Length dependent gate-substrate overlap capacitance part for a length of LEN.

nsdaco

1.0e22 cm^-3

Source/Drain effective doping level for AC model.

fifw

0.0

Inner fringe capacitance prefactor for a width of WEN.

fsceaco

0.0

Short channel effect adjustment factor for charge model.

lovo

0.0 m

Overlap length for gate/source-drain hdd overlap capacitance.

lovdo

0.0 m

Overlap length for gate/drain hdd overlap capacitance.

covdlo

0.0

Overlap capacitance modulation coefficient due to Leff variation.

covdlw

0.0

Width dependence of COVDL.

covdlbo

0.0

Overlap capacitance modulation with back bias.

dvfbovo

0.0 V

Overlap capacitance flat-band voltage adjustment.

cfro

0.0 F

Corner related outer fringe capacitance.

cfrdo

0.0 F

Corner related outer fringe capacitance at drain side.

cfrw

0.0 F

Outer fringe capacitance per side for a width of WEN.

cfrdw

0.0 F

Outer fringe capacitance per side for a width of WEN at drain side.

csdo

1.0

Drain-source capacitance correction factor.

csdbpo

0.0 F/m

Drain/source to substrate perimeter capacitance.

rtho

1.0e05 K/W

Geometry independent thermal resistance.

rthl

1.5

Length dependence of RTH.

rthw

3.0

Width dependence of RTH.

rthlw

4.5

Area dependence of RTH.

strtho

0.0

Temperature dependence of RTH.

ctho

1.0e-12 J/K

Geometry independent thermal capacitance.

lambtho

1.0e-07 m

Characteristic length of lateral thermal coupling for multifinger devices.

ftho

0.0

First neighbour thermal coupling factor for multifinger devices.

fnto

1.0

Thermal noise coefficient.

fntexcl

0.0

Length dependence coefficient of excess noise.

fntexclexp

2.0

Length dependence exponent of excess noise.

nfalw

8.0e22 V^-1/m⁴

First coefficient of flicker noise.

nfaw

0.0 V^-1/m⁴

Long channel first coefficient of flicker noise.

nfblw

3.0e07 V^-1/m²

Second coefficient of flicker noise.

nfclw

0.0 V^-1

Third coefficient of flicker noise.

nfeo

0.0

Flicker noise front transverse field effect coefficient.

nfebo

0.0

Flicker noise back transverse field effect coefficient.

efo

1.0

Frequency coefficient of flicker noise.

swstress

1

Stress model selection flag: 0=disable, 1=classical STI stress model, 2=strained channel stress model.

saref

1.0e-06 m

Reference distance between OD-edge and poly from one side.

sbref

1.0e-06 m

Reference distance between OD-edge and poly from other side.

wlod

0.0 m

Width parameter.

kuo

0.0 m

Mobility degradation/enhancement coefficient.

kvsat

0.0

Saturation velocity degradation/enhancement coefficient.

tkuo

0.0

Temperature dependence of KUO.

lkuo

0.0 m^LLODKUO

Length dependence of KUO.

wkuo

0.0 m^WLODKUO

Width dependence of KUO.

pkuo

0.0 m^(LLODKUO+WLODKUO)

Cross-term dependence of KUO.

llodkuo

0.0

Length parameter for UO stress effect.

wlodkuo

0.0

Width parameter for UO stress effect.

kvtho

0.0 Vm

Threshold shift parameter.

lkvtho

0.0 m^LLODVTH

Length dependence of KVTHO.

wkvtho

0.0 m^WLODVTH

Width dependence of KVTHO.

pkvtho

0.0 m^(LLODVTH+WLODVTH)

Cross-term dependence of KVTHO.

llodvth

0.0

Length parameter for VTH-stress effect.

wlodvth

0.0

Width parameter for VTH-stress effect.

stetao

0.0 m

Eta0 shift factor related to VTHO change.

lodetao

1.0

Eta0 shift modification factor for stress effect.

strlambda

1.0e-07 m

Relaxation characteristic length.

stralpha

3.0

Asymmetry parameter.

strdvfbo

0.0 V

Threshold shift parameter.

strwdvfbo

0.0

Width dependence of threshold shift parameter.

strdcfl

0.0

DIBL variation parameter.

strruo

0.0

Mobility degradation/enhancement coefficient.

strtruo

0.0

Temperature dependence of mobility degradation/enhancement coefficient.

strrvsat

0.0

Saturation velocity degradation/enhancement coefficient.

swpdep

0

Flag for poly-depletion model (without=0, with=1).

np

1.0e21 cm^-3

Gate poly-silicon doping.

npo

1.0e21 cm^-3

Geometry-independent gate poly-silicon doping.

npl

0.0

Length dependence of gate poly-silicon doping.

kdrifto

1.0

Geometry-independent drift component parameter of NQS effect.

kdriftl

0.0

Length dependence of KDRIFT.

kdiffo

1.0

Geometry-independent diffusion component parameter of NQS effect.

kdiffl

0.0

Length dependence of KDIFF.

fracinvo

1.0

Geometry-independent fraction of inversion charge for the second pole of the NQS transition.

kfracinvo

1.0e-15

Geometry-independent second pole frequency coefficient of the NQS transition.

l

(30*1.0e-9)

Designed Gate Length.

nf

1

Number of fins per finger.

lmin

0.0 m

Minimum channel length for which the model is valid.

lmax

1.0 m

Maximum channel length for which the model is valid.

wmin

0.0 m

Minimum channel width for which the model is valid.

wmax

1.0 m

Maximum channel width for which the model is valid.

swcryo

Flag for poly-depletion model (without=0, with=1).

tmin

Minimum temperature.

atmin

Minimum temperature slope.

btmin

Minimum temperature smoothing parameter.

meff

Effective multiplicity factor (m-factor).

iavl

Substrate current due to weak avelanche.

a1      M-112

cslexp      M-209

lovdo      M-319

strso      M-237

a1l      M-306

cslw      M-211

lovo      M-318

strth      M-131

a1o      M-305

cso      M-207

lp1      M-195

strtho      M-334

a1w      M-307

css      OP-35

lp1w      M-196

strtruo      M-374

a2      M-113

csthr      M-55

lp2      M-198

strwdvfbo      M-371

a2o      M-308

csthrb      M-56

lvarl      M-142

stthecs      M-54

a3      M-115

csthrbo      M-221

lvaro      M-141

stthecso      M-219

a3l      M-311

csthro      M-220

lvarw      M-143

stthemu      M-60

a3o      M-310

csw      M-210

m      I-11

stthemuo      M-225

a3w      M-312

ct      M-26

meff      O-1

stthesat      M-72

adrain      I-4

cth      M-132

mue      M-57

stthesatl      M-247

agidl      M-102

ctho      M-335

mueo      M-222

stthesatlw      M-249

agidld      M-103

cto      M-157

nch      M-24

stthesato      M-246

agidldo      M-292

delvto      I-12

ncho      M-155

stthesatw      M-248

agidldw      M-294

dgidl      M-110

nf      I-10

stvfb      M-32

agidlo      M-291

dgidld      M-111

nf      M-381

stvfbl      M-171

agidlw      M-293

dgidldl      M-304

nfa      M-135

stvfblw      M-173

alp      M-76

dgidldo      M-302

nfalw      M-341

stvfbo      M-170

alp1      M-77

dgidll      M-303

nfaw      M-342

stvfbw      M-172

alp1l1      M-262

dgidlo      M-301

nfb      M-136

stxcor      M-63

alp1l2      M-264

dlq      M-149

nfblw      M-343

stxcoro      M-232

alp1lexp      M-263

dtemp      I-15

nfc      M-137

swgidl      M-5

alp1lexp2      M-265

dtsh      OP-40

nfclw      M-344

swigate      M-4

alp1w      M-266

dvfbov      M-125

nfe      M-138

swign      M-7

alpb      M-78

dvfbovo      M-323

nfeb      M-139

swimpact      M-9

alpbo      M-267

dwq      M-150

nfebo      M-346

swjunasym      M-8

alpl1      M-257

ef      M-140

nfeo      M-345

swpdep      M-376

alpl2      M-259

efo      M-347

niginv      M-97

swscale      M-1

alplexp      M-258

factuo      I-13

niginvo      M-286

swshe      M-6

alplexp2      M-260

fbet1      M-193

nov      M-28

swstress      M-348

alpw      M-261

fbet1w      M-194

novd      M-29

swsubdep      M-3

areaq      M-116

fbet2      M-197

novdo      M-160

tbox      M-23

asource      I-3

feta      M-64

novo      M-159

tboxo      M-154

ax      M-75

fetao      M-233

np      M-377

thecs      M-53

axl      M-253

fif      M-119

npl      M-379

thecso      M-218

axl2      M-255

fifw      M-316

npo      M-378

themu      M-59

axlexp      M-254

fnovinv      M-98

nsdac      M-118

themuo      M-224

axlexp2      M-256

fnovinvd      M-99

nsdaco      M-315

thersg      M-69

axo      M-252

fnovinvdw      M-288

nsddc      M-37

thersgo      M-239

beff      OP-43

fnovinvw      M-287

nsddco      M-180

thesat      M-71

betn      M-46

fnt      M-133

nsub      M-25

thesatb      M-74

betnb      M-47

fntexc      M-134

nsubo      M-156

thesatbo      M-251

betnbo      M-202

fntexcl      M-339

pdrain      I-6

thesatg      M-73

betw1      M-199

fntexclexp      M-340

pkuo      M-357

thesatgo      M-250

betw2      M-200

fnto      M-338

pkvtho      M-363

thesatl      M-242

bgidl      M-104

fsceac      M-120

pnce      M-39

thesatlexp      M-243

bgidld      M-105

fsceaco      M-317

pncew      M-182

thesatlw      M-245

bgidldo      M-296

ft      OP-44

psce      M-35

thesato      M-241

bgidlo      M-295

ftho      M-337

psceb      M-36

thesatw      M-244

cbb      OP-31

gc2ch      M-88

pscebo      M-179

tk      OP-39

cbd      OP-34

gc2cho      M-277

pscedlb      M-38

tkuo      M-354

cbg      OP-32

gc2ovacc      M-92

pscedlbo      M-181

tmax      M-14

cbs      OP-33

gc2ovacco      M-281

pscel      M-176

toxe      M-20

cdb      OP-30

gc2ovinv      M-90

pscelexp      M-177

toxeo      M-151

cdd      OP-27

gc2ovinvo      M-279

pscew      M-178

toxp      M-27

cdg      OP-28

gc3ch      M-89

psource      I-5

toxpo      M-158

cds      OP-29

gc3cho      M-278

pwr      OP-48

tr      M-12

cf      M-40

gc3ovacc      M-93

qmc      M-10

tref      M-13

cfb      M-41

gc3ovacco      M-282

region      OP-49

trise      I-14

cfbo      M-186

gc3ovinv      M-91

rgate      OP-45

tsi      M-21

cfd      M-43

gc3ovinvo      M-280

rout      OP-42

tsio      M-152

cfdl      M-44

gcdov      M-94

rs      M-65

type      M-11

cfdlb      M-45

gcdovl      M-283

rsb      M-70

type      OP-1

cfdlbo      M-191

gco      M-81

rsbo      M-240

uo      M-192

cfdll      M-189

gcoo      M-270

rsg      M-68

vds      OP-2

cfdlw      M-190

gcovinvfn      M-100

rsgo      M-238

vdsat      OP-7

cfdo      M-188

gcovinvfno      M-289

rsig      M-66

vdsat_marg      OP-8

cfl      M-183

gcvdov      M-95

rsigo      M-236

vearly      OP-47

cflexp      M-184

gcvdovo      M-284

rsw1      M-234

version      M-2

cfr      M-126

gds      OP-22

rsw2      M-235

vfb      M-30

cfrd      M-127

gm      OP-20

rth      M-130

vfbb      M-31

cfrdo      M-325

gmb      OP-21

rthl      M-331

vfbbo      M-168

cfrdw      M-327

gmoverid      OP-46

rthlw      M-333

vfbl      M-162

cfro      M-324

ib      OP-12

rtho      M-330

vfbl2      M-164

cfrw      M-326

id      OP-9

rthw      M-332

vfblbo      M-169

cfw      M-185

idb      OP-18

sa      I-7

vfblexp      M-163

cgb      OP-26

ids      OP-13

saref      M-349

vfblexp2      M-165

cgbov      M-117

ig      OP-10

sb      I-8

vfblw      M-167

cgbovl      M-314

igd      OP-17

sbref      M-350

vfbo      M-161

cgbovo      M-313

igidl      OP-14

sd      I-9

vfbw      M-166

cgd      OP-24

iginv      M-82

self_gain      OP-41

vgs      OP-4

cgg      OP-23

iginvlw      M-271

sta2      M-114

vp      M-79

cgidl      M-108

igisl      OP-15

sta2o      M-309

vpg      M-80

cgidld      M-109

igovacc      M-85

stbet      M-48

vpgo      M-269

cgidldo      M-300

igovaccd      M-86

stbetl      M-204

vpo      M-268

cgidlo      M-299

igovaccdw      M-275

stbetlw      M-206

vsb      OP-3

cgs      OP-25

igovaccw      M-274

stbeto      M-203

vth      OP-5

chib      M-96

igovinv      M-83

stbetw      M-205

vth_drive      OP-6

chibo      M-285

igovinvd      M-84

stbgidl      M-106

vthmod      M-15

cic      M-34

igovinvdw      M-273

stbgidld      M-107

w      I-2

cicf      M-33

igovinvw      M-272

stbgidldo      M-298

wbet      M-201

cicfo      M-174

igs      OP-16

stbgidlo      M-297

wkuo      M-356

cico      M-175

is      OP-11

stcf      M-42

wkvtho      M-362

cov      M-121

isb      OP-19

stcfl      M-187

wlod      M-351

covd      M-122

isnoisy      I-16

stcs      M-52

wlodkuo      M-359

covdl      M-123

ivth      M-16

stcsl      M-215

wlodvth      M-365

covdlb      M-124

ivth_vdsmin      M-19

stcslw      M-217

wmax      M-385

covdlbo      M-322

ivthl      M-18

stcso      M-214

wmin      M-384

covdlo      M-320

ivthw      M-17

stcsw      M-216

wot      M-148

covdlw      M-321

kuo      M-352

stetao      M-366

wvarl      M-146

cs      M-49

kvsat      M-353

stig      M-87

wvaro      M-145

csb      OP-37

kvtho      M-360

stigfn      M-101

wvarw      M-147

csbi      M-51

l      I-1

stigfno      M-290

xcor      M-61

csbio      M-213

l      M-380

stigo      M-276

xcorb      M-62

csd      M-128

lambtho      M-336

stmue      M-58

xcorbo      M-231

csd      OP-38

lap      M-144

stmueo      M-223

xcorl      M-227

csdbp      M-129

lkuo      M-355

stralpha      M-369

xcorlexp      M-228

csdbpo      M-329

lkvtho      M-361

strdcfl      M-372

xcorlw      M-230

csdo      M-328

llodkuo      M-358

strdvfbo      M-370

xcoro      M-226

csfi      M-50

llodvth      M-364

strlambda      M-368

xcorw      M-229

csfio      M-212

lmax      M-383

strruo      M-373

xge      M-22

csg      OP-36

lmin      M-382

strrvsat      M-375

xgeo      M-153

csl      M-208

lodetao      M-367

strs      M-67