Product Documentation
Spectre Circuit Simulator Components and Device Models Reference
Product Version 23.1, June 2023

Geometrical dependences, stress effects and junction asymmetry

Scaling Equations

Effective dimensions

Introduction of the number of fingers.

Effective length and width for current model.

Effective length and width for charge model.

Physical length and width for parasitic charges and self-heating.

Process parameters

TOXE = TOXEO

TSI = TSIO

XGE = XGEO

TBOX = TBOXO

NCH = NCHO

NSUB = NSUBO

CT = CTO

TOXP = TOXPO

NOV = NOVO

NOVD = NOVDO

Gate to interface coupling parameters

CICF = CICFO

CIC = CICO

PSCEB = PSCEBO

NSDDC = NSDDCO

PSCEDLB = PSCEDLBO

PNCE = PNCEW

Drain Induced Barrier Lowering parameters

Mobility parameters

In this model, UO is integrated into GE. This changes the signification of the THESAT related global parameters, as detailed in the velocity saturation parameters part.

Series resistance parameters

Velocity saturation parameters

Since UO has been included in GE (see (3.48)), THESATL is, in L-UTSOI, closely related to the saturation velocity itself.

Saturation and Channel Length Modulation parameters

Gate current parameters

Gate Induced Drain/Source Leakage (GIDL/GISL) parameters

For gate currents, GIDL/GISL currents are not linked with LOVO in L-UTSOI.

Impact Ionization Parameters

Charge model parameters

Self-heating parameters

Noise model parameters

Stress model for SWSTRESS = 1

In this paragraph are reported the modifications brought to mobility, saturation velocity and threshold voltage parameters when the strained-SOI dedicated stress model is selected (SWSTRESS = 2).

Effective SA/SB related parameters

Modification of mobility related parameters

Modification of threshold voltage related parameters

Stress model for SWSTRESS = 2

Effective SA/SB related parameters

Modification of mobility related parameters

Modification of threshold voltage related parameters

Asymmetric junctions

After the calculations described in paragraphs 3.1, 3.2 and 3.3, local parameters are clipped according to the min/max values given in the parameters tables.

Then, if the switch parameter SWJUNASYM is equal to 0, drain and source junctions are assumed symmetrical and all parameters related to the drain junction are overwritten by their source side counterparts.

If SWJUNASYM = 0:

If SWJUNASYM = 0:

NOVD = NOV

IGOVINVD = IGOVINV

IGOVACCD = IGOVACC

AGIDLD = AGIDL

BGIDLD = BGIDL

STBGIDLD = STBGIDL

CGIDLD = CGIDL

DGIDLD = DGIDL

COVD = COV

CFRD = CFR

If SWJUNASYM = 1, the drain side related parameters are kept unchanged. Notice that, if some of the drain side parameters are not specified in the model card, they take their default value and not their source side counterpart value.


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