region=fwd

Estimated operating region. Possible values are off, fwd, rev,  and sat.

trise (C)

Temperature rise from ambient.

self_heating=yes

Control switch for self-heating. The value fast is Cadence's proprietary approach that is significantly faster than the full self-heating and generates similar results in most cases. Possible values are no, yes, or fast.

m=1

Multiplicity factor (number of devices in parallel).

isnoisy=yes

Should device generate noise. Possible values are yes and no.

area=1

Transistor area factor.

mode=internal

Mode for model parameter determination. Possible values are internal.

type=npn

Transistor type. Possible values are pnp and npn.

latb=0.0

Parameter for lateral scaling (Zeta_b).

latl=0.0

Parameter for lateral scaling (Zeta_l).

c10=2.0e-30 A²s

Constant for ICCR.

qp0=2.0e-14 Coul

Zero-bias hole charge.

ich=infinity A

High current correction (multidimensional ICCR).

hjci=1.0

B-C depletion charge weighting factor.

hf0=1.0

Weight factor for the low current minority charge.

ahjei=0.0

Parameter describing the slope of hjEi (VBE).

rhjei=1.0

Smoothing parameter for hjEi (VBE) at high voltage.

hjei=1.0

B-E depletion charge weighting factor.

hjei0=1.0

B-E depletion charge weighting factor in HBTs at VBE=0.

mcf=1.0

Forward non-ideality factor of Su transfer current.

tsf=0.0 s

Transit time (forward operation).

hfc=1.0

Collector minority charge weighting factor.

hfe=1.0

Emitter minority charge weighting factor.

alit=0.0

Factor for additional delay time of iT.

cjei0=0.0 F

Internal zero-bias BE depletion capacitance.

vdei=0.9 V

Internal BE built-in voltage.

zei=0.5

Internal BE depletion coefficient.

aljei=2.5

Maximum internal depletion capacitance divided by Cjei0.

cjci0=0.0 F

Internal zero-bias BC depletion capacitance.

vdci=0.7 V

Internal BC built-in voltage.

zci=0.4

Internal BC depletion coefficient.

vptci=infinity V

Punch-through voltage of internal BC junction.

t0=0.0 s

Time constant (low current densities).

dt0h=0.0 s

Time constant for base and BC space charge layer width modulation.

tbvl=0.0 s

Time constant for modeling carrier jam.

tef0=0.0 s

Neutral emitter storage time.

gtfe=1.0

Current dependence factor for TEF0.

thcs=0.0 s

Saturation time constant.

alhc=0.1

Smoothing facor for base and collector transit time.

fthc=0.0

Partitioning factor for base and collector portion.

vces=0.1 V

Internal CE saturation voltage.

vdck=0.0 V

Built-In B-C voltage including voltage drop in B and epi-b.l.

rci0=150.0 Ω

Low-field resistance of epitaxial collector.

vlim=0.5 V

Limitation voltage.

vpt=infinity V

Punch-through voltage. The default value is 100V since version 2.24.

tr=0.0 s

Ideal reverse transit time.

vcbar=0.0 V

Barrier voltage.

icbar=0.0 A

Normalization parameter.

acbar=0.01

Smoothing parameter for barrier voltage.

delck=2.0

Fitting factor for critical current.

alqf=0.0

Factor for additional delay time of minority charge.

ibeis=1.0e-18 A

Internal BE saturation current.

mbei=1.0

Internal BE non-ideality factor.

ireis=0.0 A

Internal BE saturation current (recombination).

mrei=2.0

Internal BE non-ideality factor (recombination).

ibcis=1.0e-16 A

Internal BC saturation current.

mbci=1.0

Internal BC non-ideality factor.

favl=0.0 1/V

Avalanche current factor.

qavl=0.0 Coul

Exponent factor for Avalanche current.

rbi0=0.0 Ω

Internal base resistance at zero-bias.

fdqr0=0.0

Correction factor for modulation.

fgeo=0.6557

Geometry factor for current crowding.

fqi=1.0

Ratio of internal to total minority charge.

fcrbi=0.0

Ratio of h.f. shunt to total internal capacitance.

dvgbe=0.0 V

Bandgap difference between B and B-E junction used for hjEi0 and hf0.

zetahjei=1.0

Temperature coefficient for ahjEi.

zetavgbe=1.0

Temperature coefficient for hjEi0.

zetarth=0.0 K/W

Temperature coefficient for Rth.

flcono=no

Flag for turning on/off correlated noise implementation. Possible values are yes and no.

alrth=0.0 1/K

First order relative TC of parameter Rth.

cjep0=0.0 F

Peripheral zero-bias BE depletion capacitance.

vdep=0.9 V

Peripheral BE built-in voltage.

zep=0.5

Peripheral BE depletion coefficient.

aljep=2.5

Maximum per. depl. cap. divided by Cjep0.

ibeps=0.0 A

Peripheral BE saturation current.

mbep=1.0

Peripheral BE non-ideality factor.

ireps=0.0 A

Peripheral BE saturation current (recomb.).

mrep=2.0

Peripheral BE non-ideality factor (recomb.).

cjcx0=0.0 F

External zero-bias BC depletion capacitance.

vdcx=0.7 V

External BC built-in voltage.

zcx=0.4

External BC depletion coefficient.

vptcx=infinity V

Punch-through voltage of external BC junction.

ccox=0.0 F

BC overlap capacitance.

fbc=0.0

Partitioning factor for Cjcx and Ccox over rBx.

ibcxs=0.0 A

External BC saturation current.

mbcx=1.0

External BC non-ideality factor.

ceox=0.0 F

Emitter oxide (overlap) capacitance.

rbx=0.0 Ω

External base series resistance.

re=0.0 Ω

Emitter series resistance.

rcx=0.0 Ω

External collector series resistance.

cjs0=0.0 F

Zero-bias CS depletion capacitance.

vds=0.6 V

CS built-in voltage.

zs=0.5

CS depletion coefficient.

vpts=infinity V

Punch-through voltage of CS junction.

rsu=0.0 Ω

Substrate resistance.

csu=0.0 F

Substrate coupling capacitance.

iscs=0.0 A

CS diode saturation current.

msc=1.0

CS diode non-ideality factor.

itss=0.0 A

Transfer saturation current of Su transistor.

msf=1.0

Forward non-ideality factor of Su transfer current.

msr=1.0

Reverse non-ideality factor of Su transfer current.

ibets=0.0 A

BE tunneling saturation current.

abet=40.0

BE tunneling factor.

kf=0.0

Flicker noise factor.

af=2.0

Flicker noise exponent factor.

krbi=1.0

Noise factor for internal base resistance.

kfre=0.0

Emitter resistance flicker noise coefficient.

afre=2.0

Emitter resistance flicker noise exponent facto.

tnom (C)

Parameters measurement temperature. Default set by options.

vgb=1.17 V

Bandgap-voltage.

alb=5.0e-3 1/K

Relative temperature coefficient of current gain.

alfav=0.0 1/K

Temperature coefficient for FAVL.

alqav=0.0 1/K

Temperature coefficient for QAVL.

zetaci=0.0

Temperature coefficient (mobility) for epi-collector.

alvs=0.0 1/K

Relative temperature coefficient of saturation drift velocity.

alces=0.0 1/K

Relative temperature coeff. of VCEs.

aldck=0.0 1/K

Relative TC of VDCK.

zetarbi=0.0

Temperature coefficient (mobility) for internal base resistance.

zetarbx=0.0

Temperature coefficient (mobility) for external base resistance.

zetarcx=0.0

Temperature coefficient (mobility) for external collector resistance.

zetare=0.0

Temperature coefficient (mobility) for emitter resistance.

alt0=0.0 1/K

Frist-order temperature coefficient of temperature T0.

kt0=0.0

Second-order temperature coefficient of temperature T0.

rth=0.0 K/W

Thermal resistance for self-heating.

cth=0.0 J/K

Thermal capacitance for self-heating.

version=2.1

The available versions are 1.0, 2.1, 2.20, 2.21, 2.22, 2.23, 2.24, 2.30, 2.31, 2.32, 2.33, 2.34, 2.40 and 3.00.

updatelevel=2.0

Model update selector. The available versions are 0, 1 ,2 and 3. updatelevel = 0 : This level is compatible with the original HICUM Fortran code. Temperature dependence is ignored.Not suggested to use this level for convergence issue; updatelevel = 1 OR 2 : This level has better temperature dependence. It includes some fixes and enhancements. Version 1.0, 2.1, 2.21, and 2.22 support this level; updatelevel = 3 : This level has complete derivatives for current and charge model. The simulation result is fully compatible with HICUM Verilog-A model. Version 2.1, 2.20, 2.22, 2.23, 2.24, 2.30, 2.31, 2.32, 2.33, and 2.34 support this level.

minr=0.001 Ω

Minimum resistance.

imax=1e3

Maximum current.

tmax=500 K

Maximum device temperature.

tmin=200 K

Minimum device temperature.

alarm=none

Forbidden operating region. Possible values are none, off, fwd, rev,  and sat.

mvt0=0.0 V

Threshold mismatch intercept.

vgc=1.17 V

Effective collector bandgap voltage.

vge=1.17 V

Effective emitter bandgap voltage.

vgs=1.17 V

Effective substrate bandgap voltage.

zetact=3.0

Exponent coefficient in transfer current temperature dependence.

zetabet=3.5

Exponent coefficient in B-E junction current temperature dependence.

tbhrec=0.0 s

Base current recombination time constant at B-C barrier for high forward injection.

tunode=1

Specifies the base node connection for the tunneling current, possible value are 0 and 1, 1 signifies perimeter node.

cbepar=0.0 F

Total parasitic B-E capacitance.

fbepar=1.0

Partitioning factor of parasitic B-E capacitance.

f1vg=-1.02377e-4

Coefficient K1 in T-dependent band-gap equation.

f2vg=4.3215e-4

Coefficient K2 in T-dependent band-gap equation.

cfbe=-1

Flag for determining where to tag the flicker noise source, Possible values are -1 and -2.

zetacx=1.0

Temperature exponent of mobility in substrate transistor transit time.

cbcpar=0.0 F

Total parasitic B-C capacitance.

fbcpar=0.0

Partitioning factor of parasitic B-C capacitance.

ajei=2.5

Ratio of maximum to zero-bias value of internal B-E capacitance.

ajep=2.5

Ratio of maximum to zero-bias value of peripheral B-E capacitance.

ahc=0.1

Smoothing factor for current dependence of base and collector transit time.

flsh=1

Flag for turning on/off self-heating effect. Possible values are 0, 1, and 2. 0 refers to turn off, 1 refers to partial turn on, and 2 refer to full selfheating.

flcomp=0.0

Flag for compatibility with v2.1 model (0=v2.1).

flnqs=1

Flag for allowing to turn on(1) or off(0) NQS effect in a given model parameter set, that included non-zero values for alit and alqf.

cornoise_flag=no

Flag for turning on/off corelated noise implementation. This parameter is an alias of flcono. Possible values are yes and no.

compatible=spectre

Compatiblity parameter. Possible values are spectre, spice2, spice3, cdsspice, spiceplus, eldo, sspice,  and mica.

cscp=0.0 F

Perimeter S-C zero-bias depletion capacitance.

vdsp=0.6 V

Perimeter S-C built-in potential.

zsp=0.5

Perimeter S-C grading coefficient.

vptsp=100 V

Perimeter S-C punch-through voltage.

aick=1e-3

Smoothing term for ICK.

kavl=0.0

Flag/factor for turning strong avalanche on.

alkav=0.0 1/K

Relative TC for KAVL.

hcavl=0.0

Factor for current dependent avalanche effect.

hvdavl=0.0

Ilim dependence for spatially varying collector doping.

tempeff (C)

Effective temperature for a single device.

meff

Effective multiplicity factor (m-factor).

region=fwd

Estimated operating region.
Possible values are off, fwd, rev, and sat.

temp (C)

Temperature.

tk (K)

Temperature in Kelvin.

dtsh (C)

Temperature rise due to selfheating.

ic (A)

Collector current.

ib (A)

Base current.

vbei (V)

Internal base-emitter voltage.

qjei (Coul)

Internal base-emitter space charge.

cjei (F)

Internal base-emitter depletion capacitance.

vbep (V)

Peripheral base-emitter voltage.

qjep (Coul)

Peripheral base-emitter space charge.

cjep (F)

Peripheral base-emitter depletion capacitance.

vbci (V)

Internal base-collector voltage.

qjci (Coul)

Internal base-collector space charge.

cjci (F)

Internal base-collector depletion capacitance.

vbcp (V)

Voltage between Per_B and internal C.

qjcp (Coul)

Charge related to Cjcp capacitance.

cjcp (F)

Capacitance between Per_B and internal C.

vbcx (V)

Voltage between external B and internal C.

qjcx (Coul)

Charge on capacitance Cjcx.

cjcx (F)

Capacitance between external B and internal C.

vsc (V)

Voltage between internal S and internal C.

qjs (Coul)

Substrate space charge.

cjs (F)

Substrate capacitance.

qdsu (Coul)

Substrate diffusion charge.

cdsu (F)

Substrate diffusion capacitance.

vcei (V)

Internal collector emitter voltage.

tf (s)

Transit Time.

qf (Coul)

Minority charge.

qdei (Coul)

Internal base-emitter diffusion charge.

cdei (F)

Internal base-emitter diffusion capacitance.

qdci (Coul)

Internal base-collector diffusion charge.

cdci (F)

Internal base-collector diffusion capacitance.

qp (Coul)

Hole charge.

it (A)

Transfer current.

itf (A)

Transfer current.

itr (A)

Transfer current.

ibet (A)

Tunneling current.

gm (S)

Common-emitter transconductance.

si (S)

Common emitter output conductance.

sfb

Sfb variable.

srb

Srb variable.

sfc

Sfc variable.

src

Src variable.

rbi (Ω)

Internal base resistance.

rbx (Ω)

External base resistance.

rcx (Ω)

External collector resistance.

re (Ω)

Re variable.

rsu (Ω)

External collector resistance.

is (A)

Substrate current.

ft (Hz)

Unity small-signal current-gain frequency.

pwr (W)

Power dissipation.

iavl (A)

Avalanche current.

ibei (A)

Internal BE current.

ibci (A)

Internal BC current.

ibep (A)

Peripheral BE current.

ijbcx (A)

External BC junction current.

ijsc (A)

SC junction current.

ieei (A)

Current from internal E to external E.

ie (A)

Current flow through terminal E.

cbe (F)

BE capacitance.

cbc (F)

BC capacitance.

betar (A/A)

Common collector current gain.

beta (A/A)

Common emitter current gain.

betadc (A/A)

Common emitter current gain. The alias is beta.

betaac

Small signal current gain.

gmavl (S)

Transconductance for avalanche current.

gms (S)

Transconductance of the parasitic substrate PNP.

rpii (Ω)

Intrinsic input resistance.

rpix (Ω)

Extrinsic input resistance.

rmui (Ω)

Intrinsic feedback resistance.

rmux (Ω)

Extrinsic feedback resistance.

rmus (Ω)

Intrinsic substrate feedback resistance.

ro (Ω)

Output resistance.

ros (Ω)

Output resistance for the parasitic substrate PNP.

cpii (F)

Total intrinsic BE capacitance.

cpix (F)

Total extrinsic BE capacitance.

cmui (F)

Total intrinsic BC capacitance.

cmux (F)

Total extrinsic BC capacitance.

ccs (F)

CS junction capacitance.

crbi (F)

Shunt capacitance across RBI.

vef (V)

Effective Forward Early voltage.

ver (V)

Effective Inverse Early voltage.

vbe (V)

External BE voltage.

vbc (V)

External BC voltage.

vce (V)

External CE voltage.

gmi (S)

Internal transconductance, alias of gm.

roi (Ω)

Output resistance.

rb (Ω)

Total base resistance as calculated in the model.