|
xgw
|
0.0 m
|
Distance from gate contact center to device edge.
|
|
ngcon
|
1
|
Number of gate contacts.
|
|
dtemp
|
0.0 K
|
Offset of device temperature.
|
|
mulu0
|
1.0 m2/(V s)
|
Multiplication factor for low field mobility.
|
|
delvto
|
0.0 V
|
Zero bias threshold voltage variation.
|
|
ids0mult
|
1.0
|
Variability in drain current for miscellaneous reasons.
|
|
edgefet
|
0
|
0: Edge FET Model OFF, 1: Edge FET Model ON.
|
|
sslmod
|
0
|
Sub-surface leakage drain current, 0: Turn off 1: Turn on.
|
|
soimod
|
0
|
0: PDSOI mode, 1: DDSOI mode.
|
|
type
|
n
|
N-type = n, P-type = p.Possible values are p and n.
|
|
cvmod
|
0
|
0: Consistent I-V/C-V, 1: Different I-V/C-V.
|
|
covmod
|
0
|
0: Use bias-independent overlap capacitances, 1: Use bias-dependent overlap capacitances.
|
|
rdsmod
|
0
|
0: Internal bias dependent and external bias independent S/D resistance model, 1: External S/D resistance model, 2: Internal S/D resistance model.
|
|
wpemod
|
0
|
Model flag.
|
|
asymmod
|
0
|
0: Asymmetry model turned off - forward mode parameters used, 1: Asymmetry model turned on.
|
|
gidlmod
|
0
|
0: Turn off GIDL current, 1: Turn on GIDL current.
|
|
igcmod
|
0
|
0: Turn off Igc, Igs and Igd, 1: Turn on Igc, Igs and Igd.
|
|
igbmod
|
0
|
0: Turn off Igb, 1: Turn on Igb.
|
|
tnoimod
|
0
|
Thermal noise model selector.
|
|
shmod
|
0
|
0: Self heating model OFF, 1: Self heating model ON.
|
|
mobscale
|
0
|
Mobility scaling model, 0: Old Model, 1: New Model.
|
|
bodymod
|
0
|
Flag for body contact mode 0: Floating body, 1: linear 2: non-linear (bias-dependent RB) .
|
|
iiimod
|
0
|
Flag for III selector.
|
|
modagbcp2
|
0
|
0: AGBCP2 OFF, 1: AGBCP2 ON.
|
|
pdemod
|
0
|
0: PDE OFF, 1: PDE ON - for DD model.
|
|
fbody1
|
0
|
0: Extrinsic S/D substrate charge ON, 1: PExtrinsic S/D substrate charge OFF.
|
|
llong
|
1.0e-5 m
|
L of extracted long channel device.
|
|
lmlt
|
1.0
|
Length shrinking parameter.
|
|
wmlt
|
1.0
|
Width shrinking parameter.
|
|
xl
|
0.0 m
|
L offset for channel length due to mask/etch effect.
|
|
wwide
|
1.0e-5 m
|
W of extracted wide channel device.
|
|
xw
|
0.0 m
|
W offset for channel width due to mask/etch effect.
|
|
lint
|
0.0 m
|
Delta L for I-V.
|
|
ll
|
0.0 m^(1+LLN)
|
Length reduction parameter.
|
|
lw
|
0.0 m^(1+LWN)
|
Length reduction parameter.
|
|
lwl
|
0.0 m^(1+LLN+LWN)
|
Length reduction parameter.
|
|
lln
|
1.0
|
Length reduction parameter.
|
|
lwn
|
1.0
|
Length reduction parameter.
|
|
wint
|
0.0 m
|
Delta W for I-V.
|
|
wl
|
0.0 m^(1+WLN)
|
Width reduction parameter.
|
|
ww
|
0.0 m^(1+WWN)
|
Width reduction parameter.
|
|
wwl
|
0.0 m^(1+WWN+WLN)
|
Width reduction parameter.
|
|
wln
|
1.0
|
Width reduction parameter.
|
|
wwn
|
1.0
|
Width reduction parameter.
|
|
dlc
|
0.0 m
|
Delta L for C-V.
|
|
llc
|
0.0 m^(1+LLN)
|
Length reduction parameter.
|
|
lwc
|
0.0 m^(1+LWN)
|
Length reduction parameter.
|
|
lwlc
|
0.0 m^(1+LWN+LLN)
|
Length reduction parameter.
|
|
dwc
|
0.0 m
|
Delta W for C-V.
|
|
wlc
|
0.0 m^(1+WLN)
|
Width reduction parameter.
|
|
wwc
|
0.0 m^(1+WWN)
|
Width reduction parameter.
|
|
wwlc
|
0.0 m^(1+WWN+WLN)
|
Width reduction parameter.
|
|
tsi
|
40e-9 m
|
Silicon-on-insulator thickness.
|
|
tbox
|
200e-9 m
|
Back gate oxide thickness in meters.
|
|
toxe
|
3.0e-9 m
|
Effective gate dielectric thickness relative to SiO2.
|
|
toxp
|
3.0e-9 m
|
Physical gate dielectric thickness. If not given, TOXP is calculated from TOXE and DTOX.
|
|
dtox
|
0.0 m
|
Difference between effective dielectric thickness.
|
|
ndep
|
1e24 1/m3
|
Channel doping concentration for I-V.
|
|
ndepl1
|
0.0 m
|
Length dependence coefficient of NDEP.
|
|
ndeplexp1
|
1.0
|
Length dependence exponent coefficient of NDEP.
|
|
ndepl2
|
0.0 m
|
Length dependence of NDEP - For Short Channel Devices.
|
|
ndeplexp2
|
2.0
|
Length dependence exponent coefficient of NDEP.
|
|
ndepw
|
0.0 m
|
Width dependence coefficient of NDEP.
|
|
ndepwexp
|
1.0
|
Width dependence exponent coefficient of NDEP.
|
|
ndepwl
|
0.0 m2
|
Width-length dependence coefficient of NDEP.
|
|
ndepwlexp
|
1.0
|
Width-length dependence exponent coefficient of NDEP.
|
|
lndep
|
0.0 1/m2
|
Length dependence of NDEP.
|
|
wndep
|
0.0 1/m2
|
Width dependence of NDEP.
|
|
pndep
|
0.0 1/m
|
Area dependence of NDEP .
|
|
ndepcv
|
1e24 1/m3
|
Channel doping concentration for C-V.
|
|
ndepcvl1
|
0.0 m
|
Length dependence coefficient of NDEPCV.
|
|
ndepcvlexp1
|
1.0
|
Length dependence exponent coefficient of NDEPCV.
|
|
ndepcvl2
|
0.0 m
|
Length dependence coefficient of NDEPCV - For Short Channel Devices.
|
|
ndepcvlexp2
|
2.0
|
Length dependence exponent coefficient of NDEPCV.
|
|
ndepcvw
|
0.0 m
|
Width dependence coefficient of NDEPCV.
|
|
ndepcvwexp
|
1.0
|
Width dependence exponent coefficient of NDEPCV.
|
|
ndepcvwl
|
0.0 m2
|
Width-length dependence coefficient of NDEPCV.
|
|
ndepcvwlexp
|
1.0
|
Width-length dependence exponent coefficient of NDEPCV.
|
|
lndepcv
|
0.0 1/m2
|
Length dependence of NDEP for C-V.
|
|
wndepcv
|
0.0 1/m2
|
Width dependence of NDEP for C-V.
|
|
pndepcv
|
0.0 1/m
|
Area dependence of NDEP for C-V.
|
|
ngate
|
5e25 1/m3
|
Gate doping concentration.
|
|
lngate
|
0.0 1/m2
|
Length dependence of NGATE.
|
|
wngate
|
0.0 1/m2
|
Width dependence of NGATE.
|
|
pngate
|
0.0 1/m
|
Area dependence of NGATE.
|
|
ni0sub
|
1.1e16 1/m3
|
Intrinsic carrier concentration of the substrate at 300.15K.
|
|
bg0sub
|
1.17 eV
|
Bandgap of substrate at 300.15K.
|
|
epsrsub
|
11.9
|
Relative dielectric constant of the channel material.
|
|
epsrox
|
3.9
|
Relative dielectric constant of the gate dielectric.
|
|
xj
|
1.5e-7 m
|
S/D junction depth.
|
|
lxj
|
0.0 m2
|
Length dependence of XJ.
|
|
wxj
|
0.0 m2
|
Width dependence of XJ.
|
|
pxj
|
0.0 m3
|
Area dependence of XJ.
|
|
vfb
|
(-0.5) V
|
Flatband voltage.
|
|
lvfb
|
0.0 V m
|
Length dependence of VFB.
|
|
wvfb
|
0.0 V m
|
Width dependence of VFB.
|
|
pvfb
|
0.0 V m2
|
Area dependence of VFB.
|
|
vfbb
|
0.0 V
|
Flatband voltage.
|
|
lvfbb
|
0.0 V m
|
Length dependence of VFBB.
|
|
wvfbb
|
0.0 V m
|
Width dependence of VFBB.
|
|
pvfbb
|
0.0 V m2
|
Area dependence of VFBB.
|
|
vfbl
|
0.0 m
|
Length dependence coefficient of VFBCV.
|
|
vfblexp
|
1.0
|
Length dependence exponent coefficient of VFBCV.
|
|
vfbw
|
0.0 m
|
Width dependence coefficient of VFBCV.
|
|
vfbwexp
|
1.0
|
Width dependence exponent coefficient of VFBCV.
|
|
vfbwl
|
0.0 m2
|
Width-length dependence coefficient of VFBCV.
|
|
vfbwlexp
|
1.0
|
Width-length dependence coefficient of VFBCV.
|
|
vfbcv
|
(-0.5) V
|
Flatband voltage for C-V.
|
|
lvfbcv
|
0.0 V m
|
Length dependence of VFBCV.
|
|
wvfbcv
|
0.0 V m
|
Width dependence of VFBCV.
|
|
pvfbcv
|
0.0 V m2
|
Area dependence of VFBCV.
|
|
vfbcvl
|
0.0 m
|
Length dependence coefficient of VFBCV.
|
|
vfbcvlexp
|
1.0
|
Length dependence exponent coefficient of VFBCV.
|
|
vfbcvw
|
0.0 m
|
Width dependence coefficient of VFBCV.
|
|
vfbcvwexp
|
1.0
|
Width dependence exponent coefficient of VFBCV.
|
|
vfbcvwl
|
0.0 m2
|
Width-length dependence coefficient of VFBCV.
|
|
vfbcvwlexp
|
1.0
|
Width-length dependence coefficient of VFBCV.
|
|
delvfbacc
|
0.0
|
VFB shift in the accumulation region, valid for CVMOD = 1 only.
|
|
vfbagbcp2
|
(-0.5) V
|
Flatband voltage for AGBCP2 C-V.
|
|
ndepagbcp2
|
1e24 1/m3
|
Channel doping concentration for AGBCP2.
|
|
nsd
|
1e26 1/m3
|
S/D doping concentration.
|
|
lnsd
|
0.0 1/m2
|
Length dependence of NSD.
|
|
wnsd
|
0.0 1/m2
|
Width dependence of NSD.
|
|
pnsd
|
0.0 1/m
|
Area dependence of NSD.
|
|
dvtp0
|
0.0 m
|
DITS.
|
|
ldvtp0
|
0.0 m2
|
Length dependence of DVTP0.
|
|
wdvtp0
|
0.0 m2
|
Width dependence of DVTP0.
|
|
pdvtp0
|
0.0 m3
|
Area dependence of DVTP0.
|
|
dvtp1
|
0.0 1/V
|
DITS.
|
|
ldvtp1
|
0.0 m/V
|
Length dependence of DVTP1.
|
|
wdvtp1
|
0.0 m/V
|
Width dependence of DVTP1.
|
|
pdvtp1
|
0.0 m2/V
|
Area dependence of DVTP1.
|
|
dvtp2
|
0.0 m V
|
DITS.
|
|
ldvtp2
|
0.0 m2/V
|
Length dependence of DVTP2.
|
|
wdvtp2
|
0.0 m2/V
|
Width dependence of DVTP2.
|
|
pdvtp2
|
0.0 m3/V
|
Area dependence of DVTP2.
|
|
dvtp3
|
0.0
|
DITS.
|
|
ldvtp3
|
0.0 m
|
Length dependence of DVTP3.
|
|
wdvtp3
|
0.0 m
|
Width dependence of DVTP3.
|
|
pdvtp3
|
0.0 m2
|
Area dependence of DVTP3.
|
|
dvtp4
|
0.0 1/V
|
DITS.
|
|
ldvtp4
|
0.0 m/V
|
Length dependence of DVTP4.
|
|
wdvtp4
|
0.0 m/V
|
Width dependence of DVTP4.
|
|
pdvtp4
|
0.0 m2/V
|
Area dependence of DVTP4.
|
|
dvtp5
|
0.0 V
|
DITS.
|
|
ldvtp5
|
0.0 m V
|
Length dependence of DVTP5.
|
|
wdvtp5
|
0.0 m V
|
Width dependence of DVTP5.
|
|
pdvtp5
|
0.0 m2 V
|
Area dependence of DVTP5.
|
|
dvbd0
|
0.0
|
coupling from Vd to Vbs for improved dVbi model.
|
|
ldvbd0
|
0.0
|
Length dependence of DVBD0.
|
|
wdvbd0
|
0.0
|
Width dependence of DVBD0.
|
|
pdvbd0
|
0.0
|
Area dependence of DVBD0.
|
|
dvbd1
|
0.0
|
coupling from Vd to Vbs for improved dVbi model.
|
|
ldvbd1
|
0.0
|
Length dependence of DVBD1.
|
|
wdvbd1
|
0.0
|
Width dependence of DVBD1.
|
|
pdvbd1
|
0.0
|
Area dependence of DVBD1.
|
|
vsce
|
0.0
|
coupling from Vd to Vbs for improved dVbi model.
|
|
lvsce
|
0.0
|
Length dependence of DVBD1.
|
|
wvsce
|
0.0
|
Width dependence of DVBD1.
|
|
pvsce
|
0.0
|
Area dependence of DVBD1.
|
|
cdsbs1
|
1.0
|
coupling from Vd to Vbs for improved dVbi model.
|
|
lcdsbs1
|
0.0
|
Length dependence of CDSBS.
|
|
wcdsbs1
|
0.0
|
Width dependence of CDSBS.
|
|
pcdsbs1
|
0.0
|
Area dependence of CDSBS.
|
|
cdsbs
|
0.0
|
coupling from Vd to Vbs for improved dVbi model.
|
|
lcdsbs
|
0.0
|
Length dependence of CDSBS.
|
|
wcdsbs
|
0.0
|
Width dependence of CDSBS.
|
|
pcdsbs
|
0.0
|
Area dependence of CDSBS.
|
|
phin
|
0.045 V
|
Non-uniform vertical doping effect on surface potential.
|
|
lphin
|
0.0 m V
|
Length dependence of PHIN.
|
|
wphin
|
0.0 m V
|
Width dependence of PHIN.
|
|
pphin
|
0.0 m2 V
|
Area dependence of PHIN.
|
|
eta0
|
0.08
|
DIBL coefficient.
|
|
leta0
|
0.0 m
|
Length dependence of ETA0.
|
|
weta0
|
0.0 m
|
Width dependence of ETA0.
|
|
peta0
|
0.0 m2
|
Area dependence of ETA0.
|
|
eta0r
|
0.08
|
DIBL coefficient.
|
|
leta0r
|
0.0 m
|
Length dependence of ETA0R.
|
|
weta0r
|
0.0 m
|
Width dependence of ETA0R.
|
|
peta0r
|
0.0 m2
|
Area dependence of ETA0R.
|
|
dsub
|
1.0
|
Length scaling exponent for DIBL.
|
|
etab
|
(-0.07) 1/V
|
Body bias coefficient for subthreshold DIBL effect.
|
|
etabexp
|
1.0
|
Exponent coefficient of ETAB.
|
|
letab
|
0.0 m/V
|
Length dependence of ETAB.
|
|
wetab
|
0.0 m/V
|
Width dependence of ETAB.
|
|
petab
|
0.0 m2/V
|
Area dependence of ETAB.
|
|
etae
|
0.0 1/V
|
Body bias coefficient for subthreshold DIBL effect.
|
|
etaeexp
|
1.0
|
Exponent coefficient of ETAE.
|
|
letae
|
0.0 m/V
|
Length dependence of ETAE.
|
|
wetae
|
0.0 m/V
|
Width dependence of ETAE.
|
|
petae
|
0.0 m2/V
|
Area dependence of ETAE.
|
|
eta1
|
0.0 1/V
|
Body bias coefficient for subthreshold DIBL effect.
|
|
eta1exp
|
1.0
|
Exponent coefficient of ETAE.
|
|
leta1
|
0.0 m/V
|
Length dependence of ETA1.
|
|
weta1
|
0.0 m/V
|
Width dependence of ETA1.
|
|
peta1
|
0.0 m2/V
|
Area dependence of ETA1.
|
|
k1
|
0.0 V^0.5
|
First-order body-bias Vth shift due to vertical non-uniform doping.
|
|
k1l
|
0.0
|
length dependence coefficient of K1.
|
|
k1lexp
|
1.0
|
Length dependence exponent coefficient of K1.
|
|
k1w
|
0.0
|
Width dependence coefficient of K1.
|
|
k1wexp
|
1.0
|
Width dependence exponent coefficient of K1.
|
|
k1wl
|
0.0
|
Width-length dependence coefficient of K1.
|
|
k1wlexp
|
1.0
|
Width-length dependence exponent coefficient of K1.
|
|
lk1
|
0.0 m V^0.5
|
Length dependence of K1.
|
|
wk1
|
0.0 m V^0.5
|
Width dependence of K1.
|
|
pk1
|
0.0 m2 V^0.5
|
Area dependence of K1.
|
|
k2
|
0.0 V
|
Vth shift due to vertical non-uniform doping.
|
|
k2l
|
0.0 m^K2LEXP
|
Length dependence coefficient of K2.
|
|
k2lexp
|
1.0
|
Length dependence exponent coefficient of K2.
|
|
k2w
|
0.0 m^K2WEXP
|
Width dependence coefficient of K2.
|
|
k2wexp
|
1.0
|
Width dependence exponent coefficient of K2.
|
|
k2wl
|
0.0 m^(2 K2WLEXP)
|
Width-length dependence coefficient of K2.
|
|
k2wlexp
|
1.0
|
Width-length dependence exponent coefficient of K2.
|
|
lk2
|
0.0 m
|
Length dependence of K2.
|
|
wk2
|
0.0 m
|
Width dependence of K2.
|
|
pk2
|
0.0 m2
|
Area dependence of K2.
|
|
ados
|
0.0
|
Quantum mechanical effect pre-factor switch in inversion.
|
|
bdos
|
1.0
|
Charge centroid parameter - slope of C-V curve under QME in inversion.
|
|
qm0
|
1.0e-3
|
Charge centroid parameter - starting point for QME in inversion.
|
|
etaqm
|
0.54
|
Bulk charge coefficient for charge centroid in inversion.
|
|
cit
|
0.0 F/m2
|
Parameter for interface traps.
|
|
lcit
|
0.0 F/m
|
Length dependence of CIT.
|
|
wcit
|
0.0 F/m
|
Width dependence of CIT.
|
|
pcit
|
0.0 F
|
Area dependence of CIT.
|
|
nfactor
|
0.0
|
Subthreshold slope factor.
|
|
nfactorl
|
0.0 m^NFACTORLEXP
|
Length dependence coefficient of NFACTOR.
|
|
nfactorlexp
|
1.0
|
Length dependence exponent coefficient of NFACTOR.
|
|
nfactorw
|
0.0 m^NFACTORWEXP
|
Width dependence coefficient of NFACTOR.
|
|
nfactorwexp
|
1.0
|
Width dependence exponent coefficient of NFACTOR.
|
|
nfactorwl
|
0.0 m^(2 NFACTORWLEXP)
|
Width-length dependence coefficient of NFACTOR.
|
|
nfactorwlexp
|
1.0
|
Width-length dependence exponent coefficient of NFACTOR.
|
|
lnfactor
|
0.0 m
|
Length dependence of NFACTOR.
|
|
wnfactor
|
0.0 m
|
Width dependence of NFACTOR.
|
|
pnfactor
|
0.0 m2
|
Area dependence of NFACTOR.
|
|
ascl
|
0.0
|
Parameter for back-gate dependent scale length.
|
|
lascl
|
0.0
|
L-term of ASCL.
|
|
wascl
|
0.0
|
W-term of ASCL.
|
|
pascl
|
0.0
|
P-term of ASCL.
|
|
bscl
|
0.0
|
Parameter for back-gate dependent scale length.
|
|
lbscl
|
0.0
|
L-term of BSCL.
|
|
wbscl
|
0.0
|
W-term of BSCL.
|
|
pbscl
|
0.0
|
P-term of BSCL.
|
|
dvt1
|
1.0
|
SCE coefficient.
|
|
ldvt1
|
0.0
|
L-term of DVT1.
|
|
wdvt1
|
0.0
|
W-term of DVT1.
|
|
pdvt1
|
0.0
|
P-term of DVT1.
|
|
cdscd
|
0.0 F/m2/V
|
Drain bias sensitivity of subthreshold slope.
|
|
lcdscd
|
0.0 F/m/V
|
Length dependence of CDSCD.
|
|
wcdscd
|
0.0 F/m/V
|
Width dependence of CDSCD.
|
|
pcdscd
|
0.0 F/V
|
Area dependence of CDSCD.
|
|
cdsc
|
1e-9 F/m2/V
|
Coupling capacitance between S/D and channel.
|
|
lcdsc
|
0.0 F/m/V
|
Length dependence of CDSCD.
|
|
wcdsc
|
0.0 F/m/V
|
Width dependence of CDSCD.
|
|
pcdsc
|
0.0 F/V
|
Area dependence of CDSCD.
|
|
csecsed
|
0.0 F/(m2 V2)
|
Substrate-bias sensitivity of CDSCD.
|
|
cbcbd
|
0.0 F/(m2 V2)
|
Body bias sensitivity of CDSCD.
|
|
csecse0
|
0.0 F/(m2 V)
|
Substrate-bias sensitivity of SS for long channel.
|
|
csecse0p
|
0.0 F/(m2 V2)
|
Substrate-bias sensitivity of SS for long channel.
|
|
csecse
|
0.0 F/(m2 V)
|
Substrate-bias sensitivity of SS for long channel.
|
|
lcsecse
|
0.0 F/m/V
|
Length dependence of CDSCD.
|
|
wcsecse
|
0.0 F/m/V
|
Width dependence of CDSCD.
|
|
pcsecse
|
0.0 F/V
|
Area dependence of CDSCD.
|
|
csecsep
|
0.0 F/(m2 V)
|
Substrate-bias sensitivity of SS for long channel.
|
|
cbcb
|
0.0 F/(m2 V)
|
Substrate-bias sensitivity of SS for long channel.
|
|
lcbcb
|
0.0 F/m/V
|
Length dependence of CDSCD.
|
|
wcbcb
|
0.0 F/m/V
|
Width dependence of CDSCD.
|
|
pcbcb
|
0.0 F/V
|
Area dependence of CDSCD.
|
|
cbcbp
|
0.0 F/(m2 V)
|
Substrate-bias sensitivity of SS for long channel.
|
|
cbcb0
|
0.0 F/(m2 V)
|
Body-bias sensitivity of SS for long channel.
|
|
cbcb0p
|
0.0 F/(m2 V2)
|
Body-bias sensitivity of SS for long channel.
|
|
cdscdl
|
0.0 m^CDSCDLEXP
|
Length dependence coefficient of CDSCD.
|
|
cdscdlexp
|
1.0
|
Length dependence exponent coefficient of CDSCD.
|
|
cdscdr
|
0.0 F/m2/V
|
Drain bias sensitivity of subthreshold slope.
|
|
lcdscdr
|
0.0 F/m/V
|
Length dependence of CDSCDR.
|
|
wcdscdr
|
0.0 F/m/V
|
Width dependence of CDSCDR.
|
|
pcdscdr
|
0.0 F/V
|
Area dependence of CDSCDR.
|
|
cdscb
|
0.0 F/m2/V
|
Body-bias sensitivity of subthreshold slope.
|
|
cdscbl
|
0.0 m^CDSCBLEXP
|
Length dependence coefficient of CDSCB.
|
|
cdscblexp
|
1.0
|
Length dependence exponent coefficient of CDSCB.
|
|
lcdscb
|
0.0 F/m/V
|
Length dependence of CDSCB.
|
|
wcdscb
|
0.0 F/m/V
|
Width dependence of CDSCB.
|
|
pcdscb
|
0.0 F/V
|
Area dependence of CDSCB.
|
|
vbsa
|
0.0 V
|
vbsa offset voltage.
|
|
vsat
|
1e5 m/s
|
Saturation velocity.
|
|
lvsat
|
0.0 m2/s
|
Length dependence of VSAT.
|
|
wvsat
|
0.0 m2/s
|
Width dependence of VSAT.
|
|
pvsat
|
0.0 m3/s
|
Area dependence of VSAT.
|
|
vsatl
|
0.0 m^VSATLEXP
|
Length dependence coefficient of VSAT.
|
|
vsatlexp
|
1.0
|
Length dependence exponent coefficient of VSAT.
|
|
vsatw
|
0.0 m^VSATWEXP
|
Width dependence coefficient of VSAT.
|
|
vsatwexp
|
1.0
|
Width dependence exponent coefficient of VSAT.
|
|
vsatwl
|
0.0 m^(2 VSATWLEXP)
|
Width-length dependence coefficient of VSAT.
|
|
vsatwlexp
|
1.0
|
Width-length dependence exponent coefficient of of VSAT.
|
|
vsatr
|
1e5 m/s
|
Saturation velocity.
|
|
lvsatr
|
0.0 m2/s
|
Length dependence of VSATR.
|
|
wvsatr
|
0.0 m2/s
|
Width dependence of VSATR.
|
|
pvsatr
|
0.0 m3/s
|
Area dependence of VSATR.
|
|
delta
|
0.125
|
Smoothing function factor for Vdsat.
|
|
ldelta
|
0.0 m
|
Length dependence of DELTA.
|
|
wdelta
|
0.0 m
|
Width dependence of DELTA.
|
|
pdelta
|
0.0 m2
|
Area dependence of DELTA.
|
|
deltal
|
0.0 m^DELTALEXP
|
Length dependence coefficient of DELTA.
|
|
deltalexp
|
1.0
|
Length dependence exponent coefficient of DELTA.
|
|
vsatcv
|
1e5 m/s
|
VSAT parameter for C-V.
|
|
lvsatcv
|
0.0 m2/s
|
Length dependence of VSATCV.
|
|
wvsatcv
|
0.0 m2/s
|
Width dependence of VSATCV.
|
|
pvsatcv
|
0.0 m3/s
|
Area dependence of VSATCV.
|
|
vsatcvl
|
0.0 m^VSATLEXP
|
Length dependence coefficient of VSATCV.
|
|
vsatcvlexp
|
1.0
|
Length dependence exponent coefficient of VSATCV.
|
|
vsatcvw
|
0.0 m^VSATWEXP
|
Width dependence coefficient of VSATCV.
|
|
vsatcvwexp
|
1.0
|
Width dependence exponent coefficient of VSATCV.
|
|
vsatcvwl
|
0.0 m^(2 VSATWLEXP)
|
Width-length dependence coefficient of VSATCV.
|
|
vsatcvwlexp
|
1.0
|
Width-length dependence exponent coefficient of VSATCV.
|
|
thesat
|
0.3
|
Saturation velocity dependent parameter.
|
|
lthesat
|
0.0 m2/s
|
Length dependence of THESAT.
|
|
wthesat
|
0.0 m2/s
|
Width dependence of THESAT.
|
|
pthesat
|
0.0 m3/s
|
Area dependence of THESAT.
|
|
lpe1
|
0.0
|
Equivalent length of pocket region at zero bias.
|
|
llpe1
|
0.0 m2/s
|
Length dependence of LPE0.
|
|
wlpe1
|
0.0 m2/s
|
Width dependence of LPE0.
|
|
plpe1
|
0.0 m3/s
|
Area dependence of LPE0.
|
|
up1
|
0.0
|
Mobility channel length coefficient.
|
|
lp1
|
1.0e-8 m
|
Mobility channel length exponential coefficient.
|
|
up2
|
0.0
|
Mobility channel length coefficient.
|
|
lp2
|
1.0e-8 m
|
Mobility channel length exponential coefficient.
|
|
u0
|
67.0e-3 m2/V/s
|
Low Field mobility..
|
|
u0l
|
0.0 m^U0LEXP
|
Length dependence coefficient of U0L.
|
|
u0lexp
|
1.0
|
Length dependence exponent coefficient of U0L.
|
|
lu0
|
0.0 m3/V/s
|
Length dependence of U0.
|
|
wu0
|
0.0 m3/V/s
|
Width dependence of U0.
|
|
pu0
|
0.0 m4/V/s
|
Area dependence of U0.
|
|
u0r
|
67.0e-3 m2/V/s
|
Reverse-mode Low Field mobility..
|
|
lu0r
|
0.0 m3/V/s
|
Length dependence of U0R.
|
|
wu0r
|
0.0 m3/V/s
|
Width dependence of U0R.
|
|
pu0r
|
0.0 m4/V/s
|
Area dependence of U0R.
|
|
etamob
|
1.0
|
Effective field parameter (should be kept close to 1).
|
|
ua
|
0.001 (m/V)^EU
|
Mobility reduction coefficient.
|
|
ual
|
0.0 m^UALEXP
|
Length dependence coefficient of UA.
|
|
ualexp
|
1.0
|
Length dependence exponent coefficient of UA.
|
|
uaw
|
0.0 m^UAWEXP
|
Width dependence coefficient of UA.
|
|
uawexp
|
1.0
|
Width dependence exponent coefficient of UA.
|
|
uawl
|
0.0 m^UAWLEXP
|
Width-length dependence coefficient of UA.
|
|
uawlexp
|
1.0
|
Width-length dependence coefficient of UA.
|
|
lua
|
0.0 m (m/V)^EU
|
Length dependence of UA.
|
|
wua
|
0.0 m (m/V)^EU
|
Width dependence of UA.
|
|
pua
|
0.0 m2 (m/V)^EU
|
Area dependence of UA.
|
|
uar
|
0.001 (m/V)^EU
|
Reverse-mode mobility reduction coefficient.
|
|
luar
|
0.0 m (m/V)^EU
|
Length dependence of UAR.
|
|
wuar
|
0.0 m (m/V)^EU
|
Width dependence of UAR.
|
|
puar
|
0.0 m2 (m/V)^EU
|
Area dependence of UAR.
|
|
eu
|
1.5
|
Mobility reduction exponent.
|
|
leu
|
0.0 m
|
Length dependence of EU.
|
|
weu
|
0.0 m
|
Width dependence of EU.
|
|
peu
|
0.0 m2
|
Area dependence of EU.
|
|
eul
|
0.0 m^EULEXP
|
Length dependence coefficient of EU.
|
|
eulexp
|
1.0
|
Length dependence exponent coefficient of EU.
|
|
euw
|
0.0 m^EUWEXP
|
Width dependence coefficient of EU.
|
|
euwexp
|
1.0
|
Width dependence exponent coefficient of EU.
|
|
euwl
|
0.0 m^EUWLEXP
|
Width-length dependence coefficient of EU.
|
|
euwlexp
|
1.0
|
Width-length dependence coefficient of EU.
|
|
ud
|
0.001
|
Coulomb scattering parameter.
|
|
udl
|
0.0 m^UDLEXP
|
Length dependence coefficient of UD.
|
|
udlexp
|
1.0
|
Length dependence exponent coefficient of UD.
|
|
lud
|
0.0 m
|
Length dependence of UD.
|
|
wud
|
0.0 m
|
Width dependence of UD.
|
|
pud
|
0.0 m2
|
Area dependence of UD.
|
|
udr
|
0.001
|
Reverse-mode Coulomb scattering parameter.
|
|
ludr
|
0.0 m
|
Length dependence of UDR.
|
|
wudr
|
0.0 m
|
Width dependence of UDR.
|
|
pudr
|
0.0 m2
|
Area dependence of UDR.
|
|
ucs
|
2.0
|
Coulomb scattering parameter.
|
|
lucs
|
0.0 m
|
Length dependence of UCS.
|
|
wucs
|
0.0 m
|
Width dependence of UCS.
|
|
pucs
|
0.0 m2
|
Area dependence of UCS.
|
|
ucsr
|
2.0
|
Reverse-mode Coulomb scattering parameter.
|
|
lucsr
|
0.0 m
|
Length dependence of UCSR.
|
|
wucsr
|
0.0 m
|
Width dependence of UCSR.
|
|
pucsr
|
0.0 m2
|
Area dependence of UCSR.
|
|
uc
|
0.0 (m/V)^EU/V
|
Mobility reduction with body bias.
|
|
ucl
|
0.0 m^UCLEXP
|
Length dependence coefficient of UC.
|
|
uclexp
|
1.0
|
Length dependence exponent coefficient of UC.
|
|
ucw
|
0.0 m^UCWEXP
|
Width dependence coefficient of UC.
|
|
ucwexp
|
1.0
|
Width dependence exponent coefficient of UC.
|
|
ucwl
|
0.0 m^(2 UCWLEXP)
|
Width-length dependence coefficient of UC.
|
|
ucwlexp
|
1.0
|
Width-length dependence exponent coefficient of UC.
|
|
luc
|
0.0 m (m/V)^EU/V
|
Length dependence of UC.
|
|
wuc
|
0.0 m (m/V)^EU/V
|
Width dependence of UC.
|
|
puc
|
0.0 m2 (m/V)^EU/V
|
Area dependence of UC.
|
|
ucr
|
0.0 (m/V)^EU/V
|
Reverse-mode mobility reduction with body bias.
|
|
lucr
|
0.0 m (m/V)^EU/V
|
Length dependence of UCR.
|
|
wucr
|
0.0 m (m/V)^EU/V
|
Width dependence of UCR.
|
|
pucr
|
0.0 m2 (m/V)^EU/V
|
Area dependence of UCR.
|
|
pclm
|
0.003
|
CLM pre-factor.
|
|
pclml
|
0.0 m^PCLMLEXP
|
Length dependence coefficient of PCLM.
|
|
pclmlexp
|
1.0
|
Length dependence exponent coefficient of PCLM.
|
|
lpclm
|
0.0 m
|
Length dependence of PCLM.
|
|
wpclm
|
0.0 m
|
Width dependence of PCLM.
|
|
ppclm
|
0.0 m2
|
Area dependence of PCLM.
|
|
pclmr
|
0.003
|
Reverse-mode CLM pre-factor.
|
|
lpclmr
|
0.0 m
|
Length dependence of PCLMR.
|
|
wpclmr
|
0.0 m
|
Width dependence of PCLMR.
|
|
ppclmr
|
0.0 m2
|
Area dependence of PCLMR.
|
|
pclmg
|
0.0 V
|
CLM pre-factor gate voltage dependence.
|
|
pclmcv
|
0.003
|
CLM parameter for C-V.
|
|
pclmcvl
|
0.0 m^PCLMLEXP
|
Length dependence coefficient of PCLMCV.
|
|
pclmcvlexp
|
1.0
|
Length dependence exponent coefficient of PCLMCV.
|
|
lpclmcv
|
0.0 m
|
Length dependence of PCLMCV.
|
|
wpclmcv
|
0.0 m
|
Width dependence of PCLMCV.
|
|
ppclmcv
|
0.0 m2
|
Area dependence of PCLMCV.
|
|
pscbe1
|
4.24e8 V/m
|
Substrate current body-effect coefficient.
|
|
lpscbe1
|
0.0 V
|
Length dependence of PSCBE1.
|
|
wpscbe1
|
0.0 V
|
Width dependence of PSCBE1.
|
|
ppscbe1
|
0.0 V m
|
Area dependence of PSCBE1.
|
|
pscbe2
|
1.0e-8 m/V
|
Substrate current body-effect coefficient.
|
|
lpscbe2
|
0.0 m2/V
|
Length dependence of PSCBE2.
|
|
wpscbe2
|
0.0 m2/V
|
Width dependence of PSCBE2.
|
|
ppscbe2
|
0.0 m3/V
|
Area dependence of PSCBE2.
|
|
pdits
|
0.0 1/V
|
Coefficient for drain-induced Vth shift.
|
|
lpdits
|
0.0 m/V
|
Length dependence of PDITS.
|
|
wpdits
|
0.0 m/V
|
Width dependence of PDITS.
|
|
ppdits
|
0.0 m2/V
|
Area dependence of PDITS.
|
|
pditsl
|
0.0 1/m
|
L dependence of drain-induced Vth shift.
|
|
pditsd
|
0.0 1/V
|
Vds dependence of drain-induced Vth shift.
|
|
lpditsd
|
0.0 m/V
|
Length dependence of PDITSD.
|
|
wpditsd
|
0.0 m/V
|
Width dependence of PDITSD.
|
|
ppditsd
|
0.0 m2/V
|
Area dependence of PDITSD.
|
|
rsh
|
0.0 ohm/square
|
Source-drain sheet resistances.
|
|
prwg
|
1.0 1/V
|
Gate bias dependence of S/D extension resistances.
|
|
lprwg
|
0.0 m/V
|
Length dependence of PRWG.
|
|
wprwg
|
0.0 m/V
|
Width dependence of PRWG.
|
|
pprwg
|
0.0 m2/V
|
Area dependence of PRWG.
|
|
prwb
|
0.0 1/V
|
Body bias dependence of resistances.
|
|
lprwb
|
0.0 m/V
|
Length dependence of PRWB.
|
|
wprwb
|
0.0 m/V
|
Width dependence of PRWB.
|
|
pprwb
|
0.0 m2/V
|
Area dependence of PRWB.
|
|
prwbl
|
0.0 m^PRWBLEXP
|
Length dependence coefficient of PPRWB.
|
|
prwblexp
|
1.0
|
Length dependence exponent coefficient of PPRWB.
|
|
wr
|
1.0
|
W dependence parameter of S/D extension resistances.
|
|
lwr
|
0.0 m
|
Length dependence of WR.
|
|
wwr
|
0.0 m
|
Width dependence of WR.
|
|
pwr
|
0.0 m2
|
Area dependence of WR.
|
|
rswmin
|
0.0 ohm μm^WR
|
Source resistance per unit width at high Vgs (RDSMOD = 1).
|
|
lrswmin
|
0.0 ohm μm^(2 WR)
|
Length dependence of RSWMIN.
|
|
wrswmin
|
0.0 ohm μm^(2 WR)
|
Width dependence of RSWMIN.
|
|
prswmin
|
0.0 ohm μm^(3 WR)
|
Area dependence of RSWMIN.
|
|
rsw
|
10.0 ohm μm^WR
|
Zero bias source resistance (RDSMOD = 1).
|
|
lrsw
|
0.0 ohm μm^(2 WR)
|
Length dependence of RSW.
|
|
wrsw
|
0.0 ohm μm^(2 WR)
|
Width dependence of RSW.
|
|
prsw
|
0.0 ohm μm^(3 WR)
|
Area dependence of RSW.
|
|
rswl
|
0.0 m^RSWLEXP
|
Geometrical scaling of RSW (RDSMOD = 1).
|
|
rswlexp
|
1.0
|
Geometrical scaling of RSW (RDSMOD = 1).
|
|
rdwmin
|
0.0 ohm μm^WR
|
Drain resistance per unit width at high Vgs (RDSMOD = 1).
|
|
lrdwmin
|
0.0 ohm μm^(2 WR)
|
Length dependence of RDWMIN.
|
|
wrdwmin
|
0.0 ohm μm^(2 WR)
|
Width dependence of RDWMIN.
|
|
prdwmin
|
0.0 ohm μm^(3 WR)
|
Area dependence of RDWMIN.
|
|
rdw
|
10.0 ohm μm^WR
|
Zero bias drain resistance (RDSMOD = 1).
|
|
lrdw
|
0.0 ohm μm^(2 WR)
|
Length dependence of RDW.
|
|
wrdw
|
0.0 ohm μm^(2 WR)
|
Width dependence of RDW.
|
|
prdw
|
0.0 ohm μm^(3 WR)
|
Area dependence of RDW.
|
|
rdwl
|
0.0 m^RDWLEXP
|
Geometrical scaling of RDW (RDSMOD = 1).
|
|
rdwlexp
|
1.0
|
Geometrical scaling of RDW (RDSMOD = 1).
|
|
rdswmin
|
0.0 ohm μm^WR
|
S/D Resistance per unit width at high Vgs (RDSMOD = 0 and RDSMOD = 2).
|
|
lrdswmin
|
0.0 ohm μm^(2 WR)
|
Length dependence of RDSWMIN.
|
|
wrdswmin
|
0.0 ohm μm^(2 WR)
|
Width dependence of RDSWMIN.
|
|
prdswmin
|
0.0 ohm μm^(3 WR)
|
Area dependence of RDSWMIN.
|
|
rdsw
|
20.0 ohm μm^WR
|
Zero bias resistance (RDSMOD = 0 and RDSMOD = 2).
|
|
rdswl
|
0.0 m^RDSWLEXP
|
Geometrical scaling of RDSW (RDSMOD = 0 and RDSMOD = 2).
|
|
rdswlexp
|
1.0
|
Geometrical scaling of RDSW (RDSMOD = 0 and RDSMOD = 2).
|
|
lrdsw
|
0.0 ohm μm^(2 WR)
|
Length dependence of RDSW.
|
|
wrdsw
|
0.0 ohm μm^(2 WR)
|
Width dependence of RDSW.
|
|
prdsw
|
0.0 ohm μm^(3 WR)
|
Area dependence of RDSW.
|
|
psat
|
1.0
|
Gmsat variation with gate bias.
|
|
lpsat
|
0.0 m
|
Length dependence of PSAT.
|
|
wpsat
|
0.0 m
|
Width dependence of PSAT.
|
|
ppsat
|
0.0 m2
|
Area dependence of PSAT.
|
|
psatl
|
0.0 m^PSATLEXP
|
Length dependence coefficient of PSATL.
|
|
psatlexp
|
1.0
|
Length dependence exponent coefficient of PSATLEXP.
|
|
psatb
|
0.0 1/V
|
Body bias effect on Idsat.
|
|
psatr
|
1.0
|
Reverse-mode Gmsat variation with gate bias.
|
|
lpsatr
|
0.0 m
|
Length dependence of PSATR.
|
|
wpsatr
|
0.0 m
|
Width dependence of PSATR.
|
|
ppsatr
|
0.0 m2
|
Area dependence of PSATR.
|
|
lpsatb
|
0.0 m/V
|
Length dependence of PSATB.
|
|
wpsatb
|
0.0 m/V
|
Width dependence of PSATB.
|
|
ppsatb
|
0.0 m2/V
|
Area dependence of PSATB.
|
|
psatx
|
1.0
|
Fine tuning of PTWG effect.
|
|
ptwg
|
0.0
|
Idsat variation with gate bias.
|
|
lptwg
|
0.0 m
|
Length dependence of PTWG.
|
|
wptwg
|
0.0 m
|
Width dependence of PTWG.
|
|
pptwg
|
0.0 m2
|
Area dependence of PTWG.
|
|
ptwgl
|
0.0 m^PTWGLEXP
|
Length dependence coefficient of PTWG.
|
|
vp
|
0.05
|
parameter for CLM dependence on VSAT, DD Model.
|
|
alp
|
0.01
|
parameter for CLM dependence on VSAT, DD Model.
|
|
ptwglexp
|
1.0
|
Length dependence exponent coefficient of PTWG.
|
|
ptwgr
|
0.0
|
Reverse-mode Idsat variation with gate bias.
|
|
lptwgr
|
0.0 m
|
Length dependence of PTWGR.
|
|
wptwgr
|
0.0 m
|
Width dependence of PTWGR.
|
|
pptwgr
|
0.0 m2
|
Area dependence of PTWGR.
|
|
ksativ
|
1.0
|
Parameter for Vdsat.
|
|
lksativ
|
0.0
|
Length dependence of KVSATIV.
|
|
wksativ
|
0.0
|
Width dependence of KVSATIV.
|
|
pksativ
|
0.0
|
Area dependence of KVSATIV.
|
|
a1
|
0.0 1/V2
|
Non-saturation effect parameter for strong inversion region.
|
|
la1
|
0.0 m/V2
|
Length dependence of A1.
|
|
wa1
|
0.0 m/V2
|
Width dependence of A1.
|
|
pa1
|
0.0 m2/V2
|
Area dependence of A1.
|
|
a11
|
0.0
|
Temperature dependence of A1.
|
|
la11
|
0.0 m
|
Length dependence of A11.
|
|
wa11
|
0.0 m
|
Width dependence of A11.
|
|
pa11
|
0.0 m2
|
Area dependence of A11.
|
|
a2
|
0.0 1/V
|
Non-saturation effect parameter for moderate inversion region.
|
|
la2
|
0.0 m/V
|
Length dependence of A2.
|
|
wa2
|
0.0 m/V
|
Width dependence of A2.
|
|
pa2
|
0.0 m2/V
|
Area dependence of A2.
|
|
a21
|
0.0
|
Temperature dependence of A2.
|
|
la21
|
0.0 m
|
Length dependence of A21.
|
|
wa21
|
0.0 m
|
Width dependence of A21.
|
|
pa21
|
0.0 m2
|
Area dependence of A21.
|
|
pdiblc
|
0.0
|
Parameter for DIBL effect on Rout.
|
|
pdiblcl
|
0.0 m^PDIBLCLEXP
|
Length dependence coefficient of PDIBLC.
|
|
pdiblclexp
|
1.0
|
Length dependence exponent coefficient of PDIBLC.
|
|
lpdiblc
|
0.0 m
|
Length dependence of PDIBLC.
|
|
wpdiblc
|
0.0 m
|
Width dependence of PDIBLC.
|
|
ppdiblc
|
0.0 m2
|
Area dependence of PDIBLC.
|
|
pdiblcr
|
0.0
|
Reverse-mode parameter for DIBL effect on Rout.
|
|
lpdiblcr
|
0.0 m
|
Length dependence of PDIBLCR.
|
|
wpdiblcr
|
0.0 m
|
Width dependence of PDIBLCR.
|
|
ppdiblcr
|
0.0 m2
|
Area dependence of PDIBLCR.
|
|
pdiblcb
|
0.0 1/V
|
Parameter for DIBL effect on Rout.
|
|
lpdiblcb
|
0.0 m/V
|
Length dependence of PDIBLCB.
|
|
wpdiblcb
|
0.0 m/V
|
Width dependence of PDIBLCB.
|
|
ppdiblcb
|
0.0 m2/V
|
Area dependence of PDIBLCB.
|
|
pvag
|
1.0
|
Vg dependence of early voltage.
|
|
lpvag
|
0.0 m
|
Length dependence of PVAG.
|
|
wpvag
|
0.0 m
|
Width dependence of PVAG.
|
|
ppvag
|
0.0 m2
|
Area dependence of PVAG.
|
|
fprout
|
0.0 V/m^0.5
|
Gds degradation factor due to pocket implants.
|
|
fproutl
|
0.0 m^FPROUTLEXP
|
Length dependence coefficient of FPROUT.
|
|
fproutlexp
|
1.0
|
Length dependence exponent coefficient of FPROUT.
|
|
lfprout
|
0.0 V m^0.5
|
Length dependence of FPROUT.
|
|
wfprout
|
0.0 V m^0.5
|
Width dependence of FPROUT.
|
|
pfprout
|
0.0 V m^1.5
|
Area dependence of FPROUT.
|
|
vabjt
|
10.0 V
|
Early voltage for bipolar current.
|
|
lvabjt
|
0.0
|
Length dependence of vabjt.
|
|
wvabjt
|
0.0
|
Width dependence of vabjt.
|
|
pvabjt
|
0.0
|
Cross-term dependence of vabjt.
|
|
aely
|
0.0 V/m
|
Channel length dependency of early voltage for bipolar current.
|
|
laely
|
0.0
|
Length dependence of aely.
|
|
waely
|
0.0
|
Width dependence of aely.
|
|
paely
|
0.0
|
Cross-term dependence of aely.
|
|
ahli
|
0.0
|
High level injection parameter for bipolar current /* v4.0 .
|
|
ahlid
|
0.0
|
High level injection parameter for bipolar current /* v4.0 .
|
|
lahli
|
0.0
|
Length dependence of ahli /*v4.0.
|
|
lahlid
|
0.0
|
Length dependence of ahlid /*v4.0.
|
|
wahli
|
0.0
|
Width dependence of ahli /* v4.0 .
|
|
wahlid
|
0.0
|
Width dependence of ahlid /* v4.0 .
|
|
pahli
|
0.0
|
X-term dependence of ahli /* v4.0 .
|
|
pahlid
|
0.0
|
X-term dependence of ahlid /* v4.0 .
|
|
xbjt
|
1.0
|
Temperature coefficient for Isbjt.
|
|
lxbjt
|
0.0
|
Length dependence of xbjt.
|
|
wxbjt
|
0.0
|
Width dependence of xbjt.
|
|
pxbjt
|
0.0
|
Cross-term dependence of xbjt.
|
|
ndiode
|
1.0
|
Diode non-ideality factor /*v4.0.
|
|
lndiode
|
0.0
|
Length dependence of ndiode.
|
|
wndiode
|
0.0
|
Width dependence of ndiode.
|
|
pndiode
|
0.0
|
Cross-term dependence of ndiode.
|
|
isbjt
|
0.0 A/m2
|
BJT injection saturation current.
|
|
pisbjt
|
0.0
|
Cross-term dependence of isbjt.
|
|
wisbjt
|
0.0
|
Width dependence of isbjt.
|
|
lisbjt
|
0.0
|
Length dependence of isbjt.
|
|
idbjt
|
0.0 A/m2
|
BJT injection saturation current.
|
|
lidbjt
|
0.0
|
Length dependence of idbjt.
|
|
widbjt
|
0.0
|
Width dependence of idbjt.
|
|
pidbjt
|
0.0
|
Cross-term dependence of idbjt.
|
|
nbjt
|
1.0
|
Power coefficient of channel length dependency for bipolar current.
|
|
lnbjt
|
0.0
|
Length dependence of nbjt.
|
|
llbjt0
|
0.0
|
Length dependence of lbjt0.
|
|
wnbjt
|
0.0
|
Width dependence of nbjt.
|
|
wlbjt0
|
0.0
|
Width dependence of lbjt0.
|
|
pnbjt
|
0.0
|
Cross-term dependence of nbjt.
|
|
plbjt0
|
0.0
|
Cross-term dependence of lbjt0.
|
|
lbjt0
|
0.20e-6 m
|
Reference channel length for bipolar current.
|
|
ln
|
2e-6 m
|
Electron/hole diffusion length.
|
|
vdsatii0
|
0.9
|
Nominal drain saturation voltage at threshold for impact ionization current.
|
|
lvdsatii0
|
0.0
|
Length dependence of vdsatii0.
|
|
wvdsatii0
|
0.0
|
Width dependence of vdsatii0.
|
|
pvdsatii0
|
0.0
|
Cross-term dependence of vdsatii0.
|
|
tii
|
0.0
|
Temperature dependent parameter for impact ionization.
|
|
alpha0
|
0.0 m/V
|
substrate current model parameter.
|
|
alpha0l
|
0.0 m^ALPHA0LEXP
|
Length dependence coefficient of ALPHA0.
|
|
alpha0lexp
|
1.0
|
Length dependence exponent coefficient of ALPHA0.
|
|
lalpha0
|
0.0 m2/V
|
Length dependence of ALPHA0.
|
|
walpha0
|
0.0 m2/V
|
Width dependence of ALPHA0.
|
|
palpha0
|
0.0 m3/V
|
Area dependence of ALPHA0.
|
|
beta0
|
0.0 1/V
|
First Vds dependent parameter of impact ionization current.
|
|
lbeta0
|
0.0 m/V
|
Length dependence of BETA0.
|
|
wbeta0
|
0.0 m/V
|
Width dependence of BETA0.
|
|
pbeta0
|
0.0 m2/V
|
Area dependence of BETA0.
|
|
beta1
|
0.0
|
Second Vds dependent parameter of impact ionization current.
|
|
lbeta1
|
0.0 m/V
|
Length dependence of BETA0.
|
|
wbeta1
|
0.0 m/V
|
Width dependence of BETA0.
|
|
pbeta1
|
0.0 m2/V
|
Area dependence of BETA0.
|
|
beta2
|
0.1 V
|
Third Vds dependent parameter of impact ionization current.
|
|
lbeta2
|
0.0 m/V
|
Length dependence of BETA0.
|
|
wbeta2
|
0.0 m/V
|
Width dependence of BETA0.
|
|
pbeta2
|
0.0 m2/V
|
Area dependence of BETA0.
|
|
lii
|
0.0
|
Channel length dependent parameter at threshold for impact ionization current.
|
|
llii
|
0.0 m/V
|
Length dependence of LII.
|
|
wlii
|
0.0 m/V
|
Width dependence of LII.
|
|
plii
|
0.0 m2/V
|
Area dependence of LII.
|
|
sii0
|
0.5
|
First Vgs dependent parameter for impact ionization current.
|
|
lsii0
|
0.0 m/V
|
Length dependence of SII0.
|
|
wsii0
|
0.0 m/V
|
Width dependence of SII0.
|
|
psii0
|
0.0 m2/V
|
Area dependence of SII0.
|
|
sii1
|
0.1
|
Second Vgs dependent parameter for impact ionization current.
|
|
lsii1
|
0.0 m/V
|
Length dependence of SII1.
|
|
wsii1
|
0.0 m/V
|
Width dependence of SII1.
|
|
psii1
|
0.0 m2/V
|
Area dependence of SII1.
|
|
sii2
|
0.0
|
Third Vgs dependent parameter for impact ionization current.
|
|
lsii2
|
0.0 m/V
|
Length dependence of SII2.
|
|
wsii2
|
0.0 m/V
|
Width dependence of SII2.
|
|
psii2
|
0.0 m2/V
|
Area dependence of SII2.
|
|
siid
|
0.0
|
Vds dependent parameter of drain saturation voltage for impact ionization current.
|
|
lsiid
|
0.0 m/V
|
Length dependence of SIID.
|
|
wsiid
|
0.0 m/V
|
Width dependence of SIID.
|
|
psiid
|
0.0 m2/V
|
Area dependence of SIID.
|
|
esatii
|
1e7 V/m
|
Saturation electric field for impact ionization.
|
|
lesatii
|
0.0 m/V
|
Length dependence of ESATII.
|
|
wesatii
|
0.0 m/V
|
Width dependence of ESATII.
|
|
pesatii
|
0.0 m2/V
|
Area dependence of SESATII.
|
|
iimod2clamp1
|
0.1 V
|
Clamp1 of SII1 * Vg term in IIMOD = 2.
|
|
iimod2clamp2
|
0.1 V
|
Clamp2 of SII0 * Vg term in IIMOD = 2.
|
|
iimod2clamp3
|
0.1 V
|
Clamp3 of ratio term in IIMOD = 2.
|
|
fbjtii
|
0.0
|
Fraction of bipolar current affecting the impact ionization.
|
|
lfbjtii
|
0.0
|
Length dependence of fbjtii.
|
|
wfbjtii
|
0.0
|
Width dependence of fbjtii.
|
|
pfbjtii
|
0.0
|
Cross-term dependence of fbjtii.
|
|
ebjtii
|
0.0
|
Impact ionization parameter for BJT part.
|
|
cbjtii
|
0.0 m
|
Length scaling parameter for II BJT part.
|
|
abjtii
|
0.0 1/V
|
Exponent factor for avalanche current.
|
|
labjtii
|
0.0
|
Length dependence of abjtii.
|
|
lcbjtii
|
0.0
|
Length dependence of cbjtii.
|
|
lebjtii
|
0.0
|
Length dependence of ebjtii.
|
|
wabjtii
|
0.0
|
Width dependence of abjtii.
|
|
wcbjtii
|
0.0
|
Width dependence of cbjtii.
|
|
webjtii
|
0.0
|
Width dependence of ebjtii.
|
|
pabjtii
|
0.0
|
Cross-term dependence of abjtii.
|
|
pcbjtii
|
0.0
|
Cross-term dependence of cbjtii.
|
|
pebjtii
|
0.0
|
Cross-term dependence of ebjtii.
|
|
vbci
|
0.0 V
|
Internal B-C built-in potential.
|
|
lvbci
|
0.0
|
Length dependence of vbci.
|
|
wvbci
|
0.0
|
Width dependence of vbci.
|
|
pvbci
|
0.0
|
Cross-term dependence of vbci.
|
|
tvbci
|
0.0
|
Temperature coefficient for VBCI.
|
|
mbjtii
|
0.4
|
Internal B-C grading coefficient.
|
|
lmbjtii
|
0.0
|
Length dependence of mbjtii.
|
|
wmbjtii
|
0.0
|
Width dependence of mbjtii.
|
|
pmbjtii
|
0.0
|
Cross-term dependence of mbjtii.
|
|
vecb
|
0.026
|
Vaux parameter for conduction-band electron tunneling.
|
|
alphagb1
|
0.35 1/V
|
First Vox dependent parameter for gate current in inversion.
|
|
lalphagb1
|
0.0
|
Length dependence of alphagb1.
|
|
walphagb1
|
0.0
|
Width dependence of alphagb1.
|
|
palphagb1
|
0.0
|
Cross-term dependence of alphagb1.
|
|
alphagb1_t
|
0.0
|
Temperature coefficient of ALPHAGB1.
|
|
lalphagb1_t
|
0.0
|
Length dependence of ALPHAGB1_T.
|
|
walphagb1_t
|
0.0
|
Width dependence of ALPHAGB1_T.
|
|
palphagb1_t
|
0.0
|
Cross-term dependence of ALPHAGB1_T.
|
|
betagb1
|
0.03 1/V2
|
Second Vox dependent parameter for gate current in inversion.
|
|
lbetagb1
|
0.0
|
Length dependence of betagb1.
|
|
wbetagb1
|
0.0
|
Width dependence of betagb1.
|
|
pbetagb1
|
0.0
|
Cross-term dependence of betagb1.
|
|
alphagb2
|
0.43 1/V
|
First Vox dependent parameter for gate current in accumulation.
|
|
lalphagb2
|
0.0
|
Length dependence of aigbcp2.
|
|
walphagb2
|
0.0
|
Width dependence of alphagb2.
|
|
palphagb2
|
0.0
|
Cross-term dependence of alphagb2.
|
|
alphagb2_t
|
0.0
|
Temperature coefficient of ALPHAGB2.
|
|
lalphagb2_t
|
0.0
|
Length dependence of ALPHAGB2_T.
|
|
walphagb2_t
|
0.0
|
Width dependence of ALPHAGB2_T.
|
|
palphagb2_t
|
0.0
|
Cross-term dependence of alphagb2_t.
|
|
betagb2
|
0.05 1/V2
|
Second Vox dependent parameter for gate current in accumulation.
|
|
lbetagb2
|
0.0
|
Length dependence of betagb2.
|
|
wbetagb2
|
0.0
|
Width dependence of betagb2.
|
|
pbetagb2
|
0.0
|
Cross-term dependence of betagb2.
|
|
vgb2
|
17 V
|
Third Vox dependent parameter for gate current in accumulation.
|
|
vgb1
|
300 V
|
Third Vox dependent parameter for gate current in inversion.
|
|
agb1
|
3.7622e-7
|
'A' for Igb1 Tunneling current model.
|
|
bgb1
|
(-3.1051e10)
|
'B' for Igb1 Tunneling current model.
|
|
agb2
|
4.9758e-7
|
'A' for Igb2 Tunneling current model.
|
|
bgb2
|
(-2.357e10)
|
'B' for Igb2 Tunneling current model.
|
|
agbc2n
|
3.4254e-7
|
NMOS 'A' for tunneling current model.
|
|
agbc2p
|
4.9723e-7
|
PMOS 'A' for tunneling current model.
|
|
bgbc2n
|
1.1665e12
|
NMOS 'B' for tunneling current model.
|
|
bgbc2p
|
7.4567e11
|
PMOS 'B' for tunneling current model.
|
|
eigbinv
|
1.1 V
|
Parameter for the Si bandgap for Igbinv.
|
|
aigc
|
1.36e-2 (F s2/g)^0.5/m
|
Parameter for Igc.
|
|
bigc
|
1.71e-3 (F s2/g)^0.5/m/V
|
Parameter for Igc.
|
|
cigc
|
0.075 1/V
|
Parameter for Igc.
|
|
aigs
|
1.36e-2 (F s2/g)^0.5/m
|
Parameter for Igs.
|
|
aigs1
|
0.0
|
Temperature coefficient of AIGD.
|
|
bigs
|
1.71e-3 (F s2/g)^0.5/m/V
|
Parameter for Igs.
|
|
cigs
|
0.075 1/V
|
Parameter for Igs.
|
|
aigd
|
1.36e-2 (F s2/g)^0.5/m
|
Parameter for Igd.
|
|
aigd1
|
0.0
|
Temperature coefficient of AIGD.
|
|
bigd
|
1.71e-3 (F s2/g)^0.5/m/V
|
Parameter for Igd.
|
|
cigd
|
0.075 1/V
|
Parameter for Igd.
|
|
dlcig
|
0.0 m
|
Delta L for Ig model.
|
|
dlcigd
|
0.0 m
|
Delta L for Ig model.
|
|
poxedge
|
1.0
|
Factor for the gate edge Tox.
|
|
ntox
|
1.0
|
Exponent for Tox ratio.
|
|
toxref
|
3.0e-9 m
|
Target tox value.
|
|
pigcd
|
1.0
|
Igc, S/D partition parameter.
|
|
aigcl
|
0.0 m
|
Length dependence coefficient of AIGC.
|
|
aigcw
|
0.0 m
|
Width dependence coefficient of AIGC.
|
|
aigc1
|
0.0
|
Temperature coefficient of AIGC.
|
|
aigsl
|
0.0 m
|
Length dependence coefficient of AIGS.
|
|
aigsw
|
0.0 m
|
Width dependence coefficient of AIGS.
|
|
aigdl
|
0.0 m
|
Length dependence coefficient of AIGD.
|
|
aigdw
|
0.0 m
|
Width dependence coefficient of AIGD.
|
|
pigcdl
|
0.0 m
|
Length dependence coefficient of PIGCD.
|
|
leigbinv
|
0.0 m V
|
Length dependence of EIGBINV.
|
|
weigbinv
|
0.0 m V
|
Width dependence of EIGBINV.
|
|
peigbinv
|
0.0 m2 V
|
Area dependence of EIGBINV.
|
|
laigc
|
0.0 (F s2/g)^0.5
|
Length dependence of AIGC.
|
|
laigc1
|
0.0
|
Length dependence of AIGC1.
|
|
waigc
|
0.0 (F s2/g)^0.5
|
Width dependence of AIGC.
|
|
waigc1
|
0.0
|
Width dependence of AIGC1.
|
|
paigc
|
0.0 m (F s2/g)^0.5
|
Area dependence of AIGC.
|
|
paigc1
|
0.0
|
Cross-term dependence of AIGC1.
|
|
lbigc
|
0.0 (F s2/g)^0.5/V
|
Length dependence of BIGC.
|
|
wbigc
|
0.0 (F s2/g)^0.5/V
|
Width dependence of BIGC.
|
|
pbigc
|
0.0 m (F s2/g)^0.5/V
|
Area dependence of BIGC.
|
|
lcigc
|
0.0 m/V
|
Length dependence of CIGC.
|
|
wcigc
|
0.0 m/V
|
Width dependence of CIGC.
|
|
pcigc
|
0.0 m2/V
|
Area dependence of CIGC.
|
|
laigs
|
0.0 (F s2/g)^0.5
|
Length dependence of AIGS.
|
|
laigs1
|
0.0
|
Length dependence of AIGS1.
|
|
waigs
|
0.0 (F s2/g)^0.5
|
Width dependence of AIGS.
|
|
waigs1
|
0.0
|
Width dependence of AIGS1.
|
|
paigs
|
0.0 m (F s2/g)^0.5
|
Area dependence of AIGS.
|
|
paigs1
|
0.0
|
Cross-term dependence of AIGS1.
|
|
lbigs
|
0.0 (F s2/g)^0.5/V
|
Length dependence of BIGS.
|
|
wbigs
|
0.0 (F s2/g)^0.5/V
|
Width dependence of BIGS.
|
|
pbigs
|
0.0 m (F s2/g)^0.5/V
|
Area dependence of BIGS.
|
|
lcigs
|
0.0 m/V
|
Length dependence of CIGS.
|
|
wcigs
|
0.0 m/V
|
Width dependence of CIGS.
|
|
pcigs
|
0.0 m2/V
|
Area dependence of CIGS.
|
|
laigd
|
0.0 (F s2/g)^0.5
|
Length dependence of AIGD.
|
|
laigd1
|
0.0
|
Length dependence of AIGD1.
|
|
waigd
|
0.0 (F s2/g)^0.5
|
Width dependence of AIGD.
|
|
waigd1
|
0.0
|
Width dependence of AIGD1.
|
|
paigd
|
0.0 m (F s2/g)^0.5
|
Area dependence of AIGD.
|
|
paigd1
|
0.0
|
Cross-term dependence of AIGD1.
|
|
lbigd
|
0.0 (F s2/g)^0.5/V
|
Length dependence of BIGD.
|
|
wbigd
|
0.0 (F s2/g)^0.5/V
|
Width dependence of BIGD.
|
|
pbigd
|
0.0 m (F s2/g)^0.5/V
|
Area dependence of BIGD.
|
|
lcigd
|
0.0 m/V
|
Length dependence of CIGD.
|
|
wcigd
|
0.0 m/V
|
Width dependence of CIGD.
|
|
pcigd
|
0.0 m2/V
|
Area dependence of CIGD.
|
|
lpoxedge
|
0.0 m
|
Length dependence of POXEDGE.
|
|
wpoxedge
|
0.0 m
|
Width dependence of POXEDGE.
|
|
ppoxedge
|
0.0 m2
|
Area dependence of POXEDGE.
|
|
ldlcig
|
0.0 m2
|
Length dependence of DLCIG.
|
|
wdlcig
|
0.0 m2
|
Width dependence of DLCIG.
|
|
pdlcig
|
0.0 m3
|
Area dependence of DLCIG.
|
|
ldlcigd
|
0.0 m2
|
Length dependence of DLCIGD.
|
|
wdlcigd
|
0.0 m2
|
Width dependence of DLCIGD.
|
|
pdlcigd
|
0.0 m3
|
Area dependence of DLCIGD.
|
|
lntox
|
0.0 m
|
Length dependence of NTOX.
|
|
wntox
|
0.0 m
|
Width dependence of NTOX.
|
|
pntox
|
0.0 m2
|
Area dependence of NTOX.
|
|
aigbcp2
|
0.043 1/V2
|
First Vgp dependent parameter for gate current in accumulation in AGBCP2 region.
|
|
aigbcp2_t
|
0.0
|
Temperature coefficient of AIGBCP2.
|
|
bigbcp2
|
0.0054 1/V2
|
Second Vgp dependent parameter for gate current in accumulation in AGBCP2 region.
|
|
cigbcp2
|
0.0075 1/V2
|
Third Vgp dependent parameter for gate current in accumulation in AGBCP2 region.
|
|
laigbcp2
|
0.0
|
Length dependence of aigbcp2.
|
|
laigbcp2_t
|
0.0
|
Length dependence of AIGBCP2_T.
|
|
lbigbcp2
|
0.0
|
Length dependence of bigbcp2.
|
|
lcigbcp2
|
0.0
|
Length dependence of cigbcp2.
|
|
waigbcp2
|
0.0
|
Width dependence of aigbcp2.
|
|
waigbcp2_t
|
0.0
|
Width dependence of AIGBCP2_T.
|
|
wbigbcp2
|
0.0
|
Width dependence of bigbcp2.
|
|
wcigbcp2
|
0.0
|
Width dependence of cigbcp2.
|
|
paigbcp2
|
0.0
|
Cross-term dependence of aigbcp2.
|
|
paigbcp2_t
|
0.0
|
Cross-term dependence of AIGBCP2_T.
|
|
pbigbcp2
|
0.0
|
Cross-term dependence of bigbcp2.
|
|
pcigbcp2
|
0.0
|
Cross-term dependence of cigbcp2.
|
|
agidl
|
0.0 V/m
|
Pre-exponential coefficient for GIDL.
|
|
agidll
|
0.0 m
|
Length dependence coefficient of AGIDL.
|
|
agidlw
|
0.0 m
|
Width dependence coefficient of AGIDL.
|
|
lagidl
|
0.0 m2
|
Length dependence of AGIDL.
|
|
wagidl
|
0.0 m2
|
Width dependence of AGIDL.
|
|
pagidl
|
0.0 m3
|
Area dependence of AGIDL.
|
|
bgidl
|
2.3e9 V/m
|
Exponential coefficient for GIDL.
|
|
bgidl1
|
0.0 V/m
|
Temperature coefficient of BGIDL.
|
|
lbgidl
|
0.0 V
|
Length dependence of BGIDL.
|
|
wbgidl
|
0.0 V
|
Width dependence of BGIDL.
|
|
pbgidl
|
0.0 V m
|
Area dependence of BGIDL.
|
|
lbgidl1
|
0.0
|
Length dependence of bgidl1.
|
|
wbgidl1
|
0.0
|
Width dependence of bgidl1.
|
|
pbgidl1
|
0.0
|
Cross-term dependence of bgidl1.
|
|
cgidl
|
0.5 V/m
|
Exponential coefficient for GIDL.
|
|
lcgidl
|
0.0 V
|
Length dependence of CGIDL.
|
|
wcgidl
|
0.0 V
|
Width dependence of CGIDL.
|
|
pcgidl
|
0.0 V m
|
Area dependence of CGIDL.
|
|
egidl
|
0.8 V
|
Band bending parameter for GIDL.
|
|
legidl
|
0.0 V m
|
Length dependence of EGIDL.
|
|
wegidl
|
0.0 V m
|
Width dependence of EGIDL.
|
|
pegidl
|
0.0 V m2
|
Area dependence of EGIDL.
|
|
agisl
|
0.0 V/m
|
Pre-exponential coefficient for GISL.
|
|
agisll
|
0.0 m
|
Length dependence coefficient of AGISL.
|
|
agislw
|
0.0 m
|
Width dependence coefficient of AGISL.
|
|
lagisl
|
0.0 m2
|
Length dependence of AGISL.
|
|
wagisl
|
0.0 m2
|
Width dependence of AGISL.
|
|
pagisl
|
0.0 m3
|
Area dependence of AGISL.
|
|
bgisl
|
2.3e9 V/m
|
Exponential coefficient for GISL.
|
|
bgisl1
|
0.0 V/m
|
Temperature coefficient of BGISL.
|
|
lbgisl
|
0.0 V
|
Length dependence of BGISL.
|
|
wbgisl
|
0.0 V
|
Width dependence of BGISL.
|
|
pbgisl
|
0.0 V m
|
Area dependence of BGISL.
|
|
lbgisl1
|
0.0
|
Length dependence of bgisl1.
|
|
wbgisl1
|
0.0
|
Width dependence of bgisl.
|
|
pbgisl1
|
0.0
|
Cross-term dependence of bgisl1.
|
|
cgisl
|
0.5 V/m
|
Exponential coefficient for GISL.
|
|
lcgisl
|
0.0 V
|
Length dependence of CGISL.
|
|
wcgisl
|
0.0 V
|
Width dependence of CGISL.
|
|
pcgisl
|
0.0 V m
|
Area dependence of CGISL.
|
|
egisl
|
0.8 V
|
Band bending parameter for GISL.
|
|
legisl
|
0.0 V m
|
Length dependence of EGISL.
|
|
wegisl
|
0.0 V m
|
Width dependence of EGISL.
|
|
pegisl
|
0.0 V m2
|
Area dependence of EGISL.
|
|
rgidl
|
1.0
|
GIDL vg parameter.
|
|
lrgidl
|
0.0
|
Length dependence of rgidl.
|
|
wrgidl
|
0.0
|
Width dependence of rgidl.
|
|
prgidl
|
0.0
|
Cross-term dependence of rgidl.
|
|
kgidl
|
0.0 V
|
GIDL vb parameter.
|
|
lkgidl
|
0.0
|
Length dependence of kgidl.
|
|
wfgidl
|
0.0
|
Width dependence of fgidl.
|
|
pfgidl
|
0.0
|
Cross-term dependence of fgidl.
|
|
fgidl
|
0.0
|
GIDL vb parameter.
|
|
lfgidl
|
0.0
|
Length dependence of fgidl.
|
|
wkgidl
|
0.0
|
Width dependence of kgidl.
|
|
pkgidl
|
0.0
|
Cross-term dependence of kgidl.
|
|
rgisl
|
1.0
|
GISL vg parameter.
|
|
lrgisl
|
0.0
|
Length dependence of rgisl.
|
|
wrgisl
|
0.0
|
Width dependence of rgisl.
|
|
prgisl
|
0.0
|
Cross-term dependence of rgisl.
|
|
kgisl
|
0.0 V
|
GISL vb parameter.
|
|
lkgisl
|
0.0
|
Length dependence of kgisl.
|
|
wkgisl
|
0.0
|
Width dependence of kgisl.
|
|
pkgisl
|
0.0
|
Cross-term dependence of kgisl.
|
|
fgisl
|
0.0
|
GISL vb parameter.
|
|
lfgisl
|
0.0
|
Length dependence of fgisl.
|
|
wfgisl
|
0.0
|
Width dependence of fgisl.
|
|
pfgisl
|
0.0
|
Cross-term dependence of fgisl.
|
|
cf
|
0.0 F/m
|
Outer fringe capacitance.
|
|
lcf
|
0.0 F
|
Length dependence of CF.
|
|
wcf
|
0.0 F
|
Width dependence of CF.
|
|
pcf
|
0.0 F m
|
Area dependence of CF.
|
|
cfrcoeff
|
1.0 F/m
|
Coefficient for outer fringe capacitance.
|
|
cgso
|
0.0 F/m
|
Gate-to-source overlap capacitance.
|
|
cgdo
|
0.0 F/m
|
Gate-to-drain overlap capacitance.
|
|
cgbo
|
0.0 F/m
|
Gate-to-body overlap capacitance.
|
|
cgsl
|
0.0 F/m
|
Overlap capacitance between gate and lightly-doped source region.
|
|
lcgsl
|
0.0
|
Length dependence of CGSL.
|
|
wcgsl
|
0.0
|
Width dependence of CGSL.
|
|
pcgsl
|
0.0
|
Area dependence of CGSL.
|
|
cgdl
|
0.0 F/m
|
Overlap capacitance between gate and lightly-doped drain region.
|
|
lcgdl
|
0.0 F
|
Length dependence of CGDL.
|
|
wcgdl
|
0.0 F
|
Width dependence of CGDL.
|
|
pcgdl
|
0.0 F m
|
Area dependence of CGDL.
|
|
ckappas
|
0.6 V
|
Coefficient of bias-dependent overlap capacitance for the source side.
|
|
lckappas
|
0.0 m V
|
Length dependence of CKAPPAS.
|
|
wckappas
|
0.0 m V
|
Width dependence of CKAPPAS.
|
|
pckappas
|
0.0 m2 V
|
Area dependence of CKAPPAS.
|
|
ckappad
|
0.6 V
|
Coefficient of bias-dependent overlap capacitance for the drain side.
|
|
lckappad
|
0.0 m V
|
Length dependence of CKAPPAD.
|
|
wckappad
|
0.0 m V
|
Width dependence of CKAPPAD.
|
|
pckappad
|
0.0 m2 V
|
Area dependence of CKAPPAD.
|
|
ckappad1
|
1.0e6
|
Parameter for tuning CGD.
|
|
ckappad2
|
1.0
|
Parameter for tuning CGD.
|
|
ckappas1
|
1.0e6
|
Parameter for tuning CGD.
|
|
ckappas2
|
1.0
|
Parameter for tuning CGD.
|
|
dmcg
|
0.0 m
|
Distance of mid-contact to gate edge.
|
|
dmci
|
0.0 m
|
Distance of mid-contact to isolation.
|
|
dmdg
|
0.0 m
|
Distance of mid-diffusion to gate edge.
|
|
dmcgt
|
0.0 m
|
Distance of mid-contact to gate edge in test.
|
|
xgl
|
0.0 m
|
Variation in Ldrawn.
|
|
rshg
|
0.1 ohm
|
Gate sheet resistance.
|
|
cjs
|
5.0e-4 F/m2
|
Unit area source-side junction capacitance at zero bias.
|
|
cjd
|
5.0e-4 F/m2
|
Unit area drain-side junction capacitance at zero bias.
|
|
cjsws
|
5.0e-10 F/m
|
Unit length source-side side-wall junction capacitance at zero bias.
|
|
cjswd
|
5.0e-10 F/m
|
Unit length drain-side side-wall junction capacitance at zero bias.
|
|
cjswgs
|
0.0 F/m
|
Unit length source-side gate side-wall junction capacitance at zero bias.
|
|
cjswgd
|
0.0 F/m
|
Unit length drain-side gate side-wall junction capacitance at zero bias.
|
|
pbs
|
1.0 V
|
Source-side bulk junction built-in potential.
|
|
pbd
|
1.0 V
|
Drain-side bulk junction built-in potential.
|
|
pbsws
|
1.0 V
|
Built-in potential for Source-side side-wall junction capacitance.
|
|
pbswd
|
1.0 V
|
Built-in potential for Drain-side side-wall junction capacitance.
|
|
pbswgs
|
1.0 V
|
Built-in potential for Source-side gate side-wall junction capacitance.
|
|
pbswgd
|
1.0 V
|
Built-in potential for Drain-side gate side-wall junction capacitance.
|
|
mjs
|
0.5
|
Source bottom junction capacitance grading coefficient.
|
|
mjd
|
0.5
|
Drain bottom junction capacitance grading coefficient.
|
|
mjsws
|
0.33
|
Source side-wall junction capacitance grading coefficient.
|
|
mjswd
|
0.33
|
Drain side-wall junction capacitance grading coefficient.
|
|
mjswgs
|
0.33
|
Source-side gate side-wall junction capacitance grading coefficient.
|
|
mjswgd
|
0.33
|
Drain-side gate side-wall junction capacitance grading coefficient.
|
|
tt
|
1e-12 s
|
Diffusion capacitance transit time coefficient.
|
|
ldif0
|
1.0
|
Channel-length dependency coefficient of diffusion cap.
|
|
ndif
|
(-1.0)
|
Power coefficient of channel length dependency for diffusion capacitance.
|
|
lndif
|
0.0
|
Length dependence of ndif.
|
|
wndif
|
0.0
|
Width dependence of ndif.
|
|
pndif
|
0.0
|
Cross-term dependence of ndif.
|
|
vtm00
|
0.026 V
|
Hard coded 25 degC thermal voltage.
|
|
permod
|
1
|
Whether PS/PD (when given) include gate-edge perimeter.
|
|
dwj
|
0.0 m
|
Delta W for S/D junctions.
|
|
xdif
|
1.0
|
Temperature coefficient for Isdif.
|
|
lxdif
|
0.0
|
Length dependence of xdif.
|
|
wxdif
|
0.0
|
Width dependence of xdif.
|
|
pxdif
|
0.0
|
Crss-term dependence of xdif.
|
|
isdif
|
1e-7 A/m2
|
Body to source/drain injection saturation current.
|
|
iddif
|
1e-7 A/m2
|
Body to source/drain injection saturation current /* v4.0 .
|
|
lisdif
|
0.0
|
Length dependence of isdif.
|
|
liddif
|
0.0
|
Length dependence of iddif.
|
|
wisdif
|
0.0
|
Width dependence of isdif.
|
|
widdif
|
0.0
|
Width dependence of iddif.
|
|
pisdif
|
0.0
|
Cross-term dependence of isdif.
|
|
piddif
|
0.0
|
Cross-term dependence of iddif.
|
|
nrecf0
|
2.0
|
Recombination non-ideality factor at forward bias.
|
|
lnrecf0
|
0.0
|
Length dependence of nrecf0.
|
|
wnrecf0
|
0.0
|
Width dependence of nrecf0.
|
|
pnrecf0
|
0.0
|
Cross-term dependence of nrecf0.
|
|
nrecr0
|
10.0
|
Recombination non-ideality factor at reversed bias.
|
|
lnrecr0
|
0.0
|
Length dependence of nrecr0.
|
|
wnrecr0
|
0.0
|
Width dependence of nrecr0.
|
|
pnrecr0
|
0.0
|
Cross-term dependence of nrecr0.
|
|
xrec
|
1.0
|
Temperature coefficient for Isrec.
|
|
lxrec
|
0.0
|
Length dependence of xrec.
|
|
wxrec
|
0.0
|
Width dependence of xrec.
|
|
pxrec
|
0.0
|
cross-section dependence of xrec.
|
|
isrec
|
1e-5 A/m2
|
Recombination in depletion saturation current.
|
|
idrec
|
1e-5 A/m2
|
Recombination in depletion saturation current.
|
|
lisrec
|
0.0
|
Length dependence of isrec.
|
|
lidrec
|
0.0
|
Length dependence of idrec.
|
|
wisrec
|
0.0
|
Width dependence of isrec.
|
|
widrec
|
0.0
|
Width dependence of idrec.
|
|
pisrec
|
0.0
|
Cross-term dependence of isrec.
|
|
pidrec
|
0.0
|
Cross-term dependence of idrec.
|
|
ntrecf
|
0.0
|
Temperature coefficient for Nrecf.
|
|
ntrecr
|
0.0
|
Temperature coefficient for Nrecr.
|
|
lntrecf
|
0.0
|
Length dependence of ntrecf.
|
|
lntrecr
|
0.0
|
Length dependence of ntrecr.
|
|
wntrecf
|
0.0
|
Width dependence of ntrecf.
|
|
wntrecr
|
0.0
|
Width dependence of ntrecr.
|
|
pntrecf
|
0.0
|
Cross-term dependence of ntrecf.
|
|
pntrecr
|
0.0
|
Cross-term dependence of ntrecr.
|
|
istun
|
1e-8 A/m2
|
Reverse tunneling saturation current.
|
|
idtun
|
1e-8 A/m2
|
Reverse tunneling saturation current.
|
|
listun
|
0.0
|
Length dependence of istun.
|
|
lidtun
|
0.0
|
Length dependence of idtun.
|
|
wistun
|
0.0
|
Width dependence of istun.
|
|
widtun
|
0.0
|
Width dependence of idtun.
|
|
pistun
|
0.0
|
Cross-term dependence of istun.
|
|
pidtun
|
0.0
|
Cross-term dependence of idtun.
|
|
xtun
|
0.0
|
Temperature coefficient for Istun.
|
|
xtund
|
0.0
|
Temperature coefficient for Idtun.
|
|
lxtun
|
0.0
|
Length dependence of xtun.
|
|
lxtund
|
0.0
|
Length dependence of xtund.
|
|
wxtun
|
0.0
|
Width dependence of xtun.
|
|
wxtund
|
0.0
|
Width dependence of xtund.
|
|
pxtun
|
0.0
|
Cross-term dependence of xtun.
|
|
pxtund
|
0.0
|
Cross-term dependence of xtund.
|
|
ntun
|
10.0
|
Reverse tunneling non-ideality factor.
|
|
ntund
|
10.0
|
Reverse tunneling non-ideality factor.
|
|
lntun
|
0.0
|
Length dependence of ntun.
|
|
lntund
|
0.0
|
Length dependence of ntund.
|
|
wntun
|
0.0
|
Width dependence of ntun.
|
|
wntund
|
0.0
|
Width dependence of ntund.
|
|
pntun
|
0.0
|
Cross-term dependence of ntun.
|
|
pntund
|
0.0
|
Cross-term dependence of ntund.
|
|
vtun0
|
0.0 V
|
Voltage dependent parameter for tunneling current.
|
|
vtun0d
|
0.0 V
|
Voltage dependent parameter for tunneling current.
|
|
lvtun0
|
0.0
|
Length dependence of vtun0.
|
|
lvtun0d
|
0.0
|
Length dependence of vtun0d.
|
|
wvtun0
|
0.0
|
Width dependence of vtun0.
|
|
wvtun0d
|
0.0
|
Width dependence of vtun0d.
|
|
pvtun0
|
0.0
|
Cross-term dependence of vtun0.
|
|
pvtun0d
|
0.0
|
Cross-term dependence of vtun0d.
|
|
vrec0
|
0.0 V
|
Voltage dependent parameter for recombination current.
|
|
vrec0d
|
0.0 V
|
Voltage dependent parameter for recombination current.
|
|
lvrec0
|
0.0
|
Length dependence of vrec0.
|
|
lvrec0d
|
0.0
|
Length dependence of vrec0d.
|
|
wvrec0
|
0.0
|
Width dependence of vrec0.
|
|
wvrec0d
|
0.0
|
Width dependence of vrec0d.
|
|
pvrec0
|
0.0
|
Cross-term dependence of vrec0.
|
|
pvrec0d
|
0.0
|
Cross-term dependence of vrec0d.
|
|
xrcrg1
|
12.0
|
1st fitting parameter the bias-dependent Rg .
|
|
xrcrg2
|
1.0
|
2nd fitting parameter the bias-dependent Rg .
|
|
ef
|
1.0
|
Flicker noise frequency exponent.
|
|
em
|
4.1e7 V/m
|
Saturation field.
|
|
noia
|
6.250e40 s^(1-EF)/(eV)^1/m3
|
Flicker noise parameter A.
|
|
noib
|
3.125e25 s^(1-EF)/(eV)^1/m
|
Flicker noise parameter B.
|
|
noic
|
8.750e8 s^(1-EF) m/(eV)^1
|
Flicker noise parameter C.
|
|
lintnoi
|
0.0 m
|
Length reduction parameter offset.
|
|
noia1
|
0.0
|
Flicker noise fitting parameter in strong inversion.
|
|
noiax
|
1.0
|
Flicker noise fitting parameter in strong inversion for high VDS.
|
|
ntnoi
|
1.0
|
Noise factor for short-channel devices for TNOIMOD = 0 only.
|
|
rnoia
|
0.577
|
Noise parameter for TNOIMOD = 1.
|
|
rnoib
|
0.5164
|
Noise parameter for TNOIMOD = 1.
|
|
rnoic
|
0.395
|
Noise parameter for TNOIMOD = 1.
|
|
tnoia
|
1.5
|
Noise parameter for TNOIMOD = 1.
|
|
tnoib
|
3.5
|
Noise parameter for TNOIMOD = 1.
|
|
tnoic
|
0.0
|
Noise correlation coefficient for TNOIMOD = 1.
|
|
binunit
|
1
|
Unit of L and W for Binning, 1: micro-meter, 0: default.
|
|
dlbin
|
0.0
|
Length reduction parameter for binning.
|
|
dwbin
|
0.0
|
Width reduction parameter for binning.
|
|
tnom
|
27.0 degC
|
Temperature at which the model was extracted.
|
|
tbgasub
|
4.73e-4 eV/K
|
Bandgap temperature coefficient.
|
|
tbgbsub
|
636.0 K
|
Bandgap temperature coefficient.
|
|
tnfactor
|
0.0
|
Temperature exponent for NFACTOR.
|
|
ute
|
(-1.5)
|
Mobility temperature exponent.
|
|
lute
|
0.0 m
|
Length dependence of UTE.
|
|
wute
|
0.0 m
|
Width dependence of UTE.
|
|
pute
|
0.0 m2
|
Area dependence of UTE.
|
|
utel
|
0.0 m
|
Length scaling parameter for UTE.
|
|
ua1
|
1.0e-3 m/V
|
Temperature coefficient for UA.
|
|
lua1
|
0.0 m2/V
|
Length dependence of UA1.
|
|
wua1
|
0.0 m2/V
|
Width dependence of UA1.
|
|
pua1
|
0.0 m3/V
|
Area dependence of UA1.
|
|
ua1l
|
0.0 m
|
Length scaling parameter for UA1.
|
|
uc1
|
0.056e-9 1.0/K
|
Temperature coefficient for UC.
|
|
luc1
|
0.0 m/K
|
Length dependence of UC1.
|
|
wuc1
|
0.0 m/K
|
Width dependence of UC1.
|
|
puc1
|
0.0 m2/K
|
Area dependence of UC1.
|
|
ud1
|
0.0 1/m2
|
Temperature coefficient for UD.
|
|
lud1
|
0.0 1/m
|
Length dependence of UD1.
|
|
wud1
|
0.0 1/m
|
Width dependence of UD1.
|
|
pud1
|
0.0
|
Area dependence of UD1.
|
|
ud1l
|
0.0 m
|
Length scaling parameter for UD1.
|
|
eu1
|
0.0
|
Temperature coefficient for EU.
|
|
leu1
|
0.0 m
|
Length dependence of EU1.
|
|
weu1
|
0.0 m
|
Width dependence of EU1.
|
|
peu1
|
0.0 m2
|
Area dependence of EU1.
|
|
ucste
|
(-4.775e-3)
|
Temperature coefficient for UCS.
|
|
lucste
|
0.0 m
|
Length dependence of UCSTE.
|
|
wucste
|
0.0 m
|
Width dependence of UCSTE.
|
|
pucste
|
0.0 m2
|
Area dependence of UCSTE.
|
|
teta0
|
0.0
|
Temperature coefficient for ETA0.
|
|
prt
|
0.0
|
Temperature coefficient for resistance.
|
|
lprt
|
0.0 m
|
Length dependence of PRT.
|
|
wprt
|
0.0 m
|
Width dependence of PRT.
|
|
pprt
|
0.0 m2
|
Area dependence of PRT.
|
|
at
|
(-1.56e-3) m/s
|
Temperature coefficient for saturation velocity.
|
|
lat
|
0.0 m2/s
|
Length dependence of AT.
|
|
wat
|
0.0 m2/s
|
Width dependence of AT.
|
|
pat
|
0.0 m3/s
|
Area dependence of AT.
|
|
atl
|
0.0 m
|
Length Scaling parameter for AT.
|
|
tdelta
|
0.0 1/K
|
Temperature coefficient for DELTA.
|
|
ptwgt
|
0.0 1/K
|
Temperature coefficient for PTWG.
|
|
lptwgt
|
0.0 m/K
|
Length dependence of PTWGT.
|
|
wptwgt
|
0.0 m/K
|
Width dependence of PTWGT.
|
|
pptwgt
|
0.0 m2/K
|
Area dependence of PTWGT.
|
|
ptwgtl
|
0.0 m
|
Length sacaling parameter for PTWGT.
|
|
kt1
|
(-0.11) V
|
Temperature coefficient for Vth.
|
|
kt1exp
|
1.0
|
Temperature coefficient for Vth.
|
|
kt1l
|
0.0 V m
|
Temperature coefficient for Vth.
|
|
lkt1
|
0.0 V m
|
Length dependence of KT1.
|
|
wkt1
|
0.0 V m
|
Width dependence of KT1.
|
|
pkt1
|
0.0 V m2
|
Area dependence of KT1.
|
|
kt2
|
0.022
|
Temperature coefficient for Vth.
|
|
lkt2
|
0.0 m
|
Length dependence of KT2.
|
|
wkt2
|
0.0 m
|
Width dependence of KT2.
|
|
pkt2
|
0.0 m2
|
Area dependence of KT2.
|
|
iit
|
0.0
|
Temperature coefficient for BETA0.
|
|
liit
|
0.0 m
|
Length dependence of IIT.
|
|
wiit
|
0.0 m
|
Width dependence of IIT.
|
|
piit
|
0.0 m2
|
Area dependence of IIT.
|
|
igt
|
2.5
|
Gate current temperature dependence.
|
|
ligt
|
0.0 m
|
Length dependence of IGT.
|
|
wigt
|
0.0 m
|
Width dependence of IGT.
|
|
pigt
|
0.0 m2
|
Area dependence of IGT.
|
|
tcj
|
0.0 1/K
|
Temperature coefficient for CJS/CJD.
|
|
tcjsw
|
0.0 1/K
|
Temperature coefficient for CJSWS/CJSWD.
|
|
tcjswg
|
0.0 1/K
|
Temperature coefficient for CJSWGS/CJSWGD.
|
|
tpb
|
0.0 V/K
|
Temperature coefficient for PBS/PBD.
|
|
tpbsw
|
0.0 V/K
|
Temperature coefficient for PBSWS/PBSWD.
|
|
tpbswg
|
0.0 V/K
|
Temperature coefficient for PBSWGS/PBSWGD.
|
|
rth0
|
0.0 m K/W
|
Thermal resistance.
|
|
cth0
|
1.0e-5 s W/(m K)
|
Thermal capacitance.
|
|
wth0
|
0.0 m
|
Width dependence coefficient for Rth and Cth.
|
|
saref
|
1.0e-6 m
|
Reference distance between OD edge from Poly from one side.
|
|
sbref
|
1.0e-6 m
|
Reference distance between OD edge from Poly from other side.
|
|
wlod
|
0.0 m
|
Width parameter for stress effect.
|
|
ku0
|
0.0 m
|
Mobility degradation/enhancement parameter for stress effect.
|
|
kvsat
|
0.0 m
|
Saturation velocity degradation/enhancement parameter for stress effect.
|
|
tku0
|
0.0
|
Temperature coefficient for KU0.
|
|
lku0
|
0.0 m^LLODKU0
|
Length dependence of KU0.
|
|
wku0
|
0.0 m^WLODKU0
|
Width dependence of KU0.
|
|
pku0
|
0.0 m^(LLODKU0+WLODKU0)
|
Cross-term dependence of KU0.
|
|
llodku0
|
0.0
|
Length parameter for U0 stress effect.
|
|
wlodku0
|
0.0
|
Width parameter for U0 stress effect.
|
|
kvth0
|
0.0 V m
|
Threshold shift parameter for stress effect.
|
|
lkvth0
|
0.0 m^LLODKU0
|
Length dependence of KVTH0.
|
|
wkvth0
|
0.0 m^WLODKU0
|
Width dependence of KVTH0.
|
|
pkvth0
|
0.0 m^(LLODKU0+WLODKU0)
|
Cross-term dependence of KVTH0.
|
|
llodvth
|
0.0
|
Length parameter for Vth stress effect.
|
|
wlodvth
|
0.0
|
Width parameter for Vth stress effect.
|
|
stk2
|
0.0 m
|
K2 shift factor related to Vth change.
|
|
lodk2
|
0.0
|
K2 shift modification factor for stress effect.
|
|
steta0
|
0.0 m
|
ETA0 shift related to Vth0 change.
|
|
lodeta0
|
0.0
|
ETA0 modification factor for stress effect.
|
|
web
|
0.0
|
Coefficient for SCB (> 0).
|
|
wec
|
0.0
|
Coefficient for SCC (> 0).
|
|
kvth0we
|
0.0
|
Threshold shift factor for well proximity effect.
|
|
lkvth0we
|
0.0 m
|
Length dependence of KVTH0WE.
|
|
wkvth0we
|
0.0 m
|
Width dependence of KVTH0WE.
|
|
pkvth0we
|
0.0 m2
|
Area dependence of KVTH0WE.
|
|
k2we
|
0.0
|
K2 shift factor for well proximity effect.
|
|
lk2we
|
0.0 m
|
Length dependence of K2WE.
|
|
wk2we
|
0.0 m
|
Width dependence of K2WE.
|
|
pk2we
|
0.0 m2
|
Area dependence of K2WE.
|
|
ku0we
|
0.0
|
Mobility degradation factor for well proximity effect.
|
|
lku0we
|
0.0 m
|
Length dependence of KU0WE.
|
|
wku0we
|
0.0 m
|
Width dependence of KU0WE.
|
|
pku0we
|
0.0 m2
|
Area dependence of KU0WE.
|
|
scref
|
1.0e-6 m
|
Reference distance to calculate SCA,SCB and SCC (< 0).
|
|
ssl0
|
4.0e2 A/m
|
Temperature- and doping-independent parameter for sub-surface leakage drain current.
|
|
ssl1
|
3.36e8 1/m
|
Temperature- and doping-independent parameter for gate length for sub-surface leakage drain current.
|
|
ssl2
|
0.185
|
Fitting parameter for sub-surface leakage drain current: barrier height.
|
|
ssl3
|
0.3 V
|
Fitting parameter for sub-surface leakage drain current: gate voltage effect.
|
|
ssl4
|
1.4 1/V
|
Fitting parameter for sub-surface leakage drain current: gate voltage effect.
|
|
ssl5
|
0 1/V
|
Fitting parameter for sub-surface leakage drain current: gate voltage effect.
|
|
sslexp1
|
0.490
|
Fitting exponent for SSL doping effect.
|
|
sslexp2
|
1.42
|
Fitting exponent for SSL temperature.
|
|
avdsx
|
20.0
|
Smoothing parameter in Vdsx in Vbsx.
|
|
wedge
|
10.0e-9 m
|
Edge FET width.
|
|
dgammaedge
|
0.0
|
Different in body-bias coefficient between Edge-FET and Main-FET.
|
|
dgammaedgel
|
0.0
|
L dependence parameter for DGAMMA.
|
|
dgammaedgelexp
|
1.0
|
Exponent of L dependence parameter for DGAMMA.
|
|
dvtedge
|
0.0
|
Vth shift for Edge FET.
|
|
ndepedge
|
1e24 1/m3
|
Channel doping concentration for EDGEFET.
|
|
lndepedge
|
0.0 1/m2
|
Length dependence of NDEPEDGE.
|
|
wndepedge
|
0.0 1/m2
|
Width dependence of NDEPEDGE.
|
|
pndepedge
|
0.0 1/m
|
Area dependence of NDEPEDGE.
|
|
nfactoredge
|
0.0
|
NFACTOR for Edge FET.
|
|
lnfactoredge
|
0.0 m
|
Length dependence of NFACTOREDGE.
|
|
wnfactoredge
|
0.0 m
|
Width dependence of NFACTOREDGE.
|
|
pnfactoredge
|
0.0 m2
|
Area dependence of NFACTOREDGE.
|
|
citedge
|
0.0 F/m2
|
CIT for Edge FET.
|
|
lcitedge
|
0.0 F/m
|
Length dependence of CITEDGE.
|
|
wcitedge
|
0.0 F/m
|
Width dependence of CITEDGE.
|
|
pcitedge
|
0.0 F
|
Area dependence of CITEDGE.
|
|
cdscdedge
|
1e-9 F/m2/V
|
CDSCD for edge FET.
|
|
lcdscdedge
|
0.0 F/m/V
|
Length dependence of CDSCDEDGE.
|
|
wcdscdedge
|
0.0 F/m/V
|
Width dependence of CDSCDEDGE.
|
|
pcdscdedge
|
0.0 F/V
|
Area dependence of CDSCDEDGE.
|
|
cdscbedge
|
0.0 F/m2/V
|
CDSCB for edge FET.
|
|
lcdscbedge
|
0.0 F/m/V
|
Length dependence of CDSCBEDGE.
|
|
wcdscbedge
|
0.0 F/m/V
|
Width dependence of CDSCBEDGE.
|
|
pcdscbedge
|
0.0 F/V
|
Area dependence of CDSCBEDGE.
|
|
eta0edge
|
0.08
|
DIBL parameter for edge FET.
|
|
leta0edge
|
0.0 m
|
Length dependence of ETA0EDGE.
|
|
weta0edge
|
0.0 m
|
Width dependence of ETA0EDGE.
|
|
peta0edge
|
0.0 m2
|
Area dependence of ETA0EDGE.
|
|
etabedge
|
(-0.07) 1/V
|
ETAB for edge FET.
|
|
letabedge
|
0.0 m/V
|
Length dependence of ETABEDGE.
|
|
wetabedge
|
0.0 m/V
|
Width dependence of ETABEDGE.
|
|
petabedge
|
0.0 m2/V
|
Area dependence of ETABEDGE.
|
|
kt1edge
|
(-0.11) V
|
Temperature dependence parameter of threshold voltage for edge FET.
|
|
lkt1edge
|
0.0 V m
|
Length dependence of KT1EDGE.
|
|
wkt1edge
|
0.0 V m
|
Width dependence of KT1EDGE.
|
|
pkt1edge
|
0.0 V m2
|
Area dependence of KT1EDGE.
|
|
kt1ledge
|
0.0 V m
|
Temperature dependence parameter of threshold voltage for edge FET.
|
|
lkt1ledge
|
0.0 V m2
|
Length dependence of KT1LEDGE.
|
|
wkt1ledge
|
0.0 V m2
|
Width dependence of KT1LEDGE.
|
|
pkt1ledge
|
0.0 V m3
|
Area dependence of KT1LEDGE.
|
|
kt2edge
|
0.022
|
Temperature dependence parameter of threshold voltage for edge FET.
|
|
lkt2edge
|
0.0 m
|
Length dependence of KT2EDGE.
|
|
wkt2edge
|
0.0 m
|
Width dependence of KT2EDGE.
|
|
pkt2edge
|
0.0 m2
|
Area dependence of KT2EDGE.
|
|
kt1expedge
|
1.0
|
Temperature dependence parameter of threshold voltage for edge device.
|
|
lkt1expedge
|
0.0 m
|
Length dependence of KT1EXPEDGE.
|
|
wkt1expedge
|
0.0 m
|
Width dependence of KT1EXPEDGE.
|
|
pkt1expedge
|
0.0 m2
|
Area dependence of KT1EXPEDGE.
|
|
tnfactoredge
|
0.0
|
Temperature dependence parameter of subthreshold slope factor for edge.
|
|
ltnfactoredge
|
0.0 m
|
Length dependence of TNFACTOREDGE.
|
|
wtnfactoredge
|
0.0 m
|
Width dependence of TNFACTOREDGE.
|
|
ptnfactoredge
|
0.0 m2
|
Area dependence of TNFACTOREDGE.
|
|
teta0edge
|
0.0
|
Temperature dependence parameter of DIBL parameter for edge FET.
|
|
lteta0edge
|
0.0 m
|
Length dependence of TETA0EDGE.
|
|
wteta0edge
|
0.0 m
|
Width dependence of TETA0EDGE.
|
|
pteta0edge
|
0.0 m2
|
Area dependence of TETA0EDGE.
|
|
dvt0edge
|
2.2
|
First coefficient of SCE effect on Vth for Edge FET.
|
|
dvt1edge
|
0.53
|
Second coefficient of SCE effect on Vth for Edge FET.
|
|
dvt2edge
|
0.0 1/V
|
Body-bias coefficient for SCE effect for Edge FET.
|
|
k2edge
|
0.0 V
|
Vth shift due to Vertical Non-uniform doping.
|
|
lk2edge
|
0.0 m
|
Length dependence of K2EDGE.
|
|
wk2edge
|
0.0 m
|
Width dependence of K2EDGE.
|
|
pk2edge
|
0.0 m2
|
Area dependence of K2EDGE.
|
|
kvth0edge
|
0.0 V m
|
Threshold Shift parameter for stress effect.
|
|
lkvth0edge
|
0.0 m^LLODKU0
|
Length dependence of KVTH0EDGE.
|
|
wkvth0edge
|
0.0 m^WLODKU0
|
Width dependence of KVTH0EDGE.
|
|
pkvth0edge
|
0.0 m^(LLODKU0+WLODKU0)
|
Area dependence of KVTH0EDGE.
|
|
kvth0edgewe
|
0.0
|
Threshold Shift parameter due to Well proximity in EDGEFET.
|
|
lkvth0edgewe
|
0.0
|
Length dependence of KVTHOWEEDGE.
|
|
wkvth0edgewe
|
0.0
|
Width dependence of KVTHOWEEDGE.
|
|
pkvth0edgewe
|
0.0
|
Area dependence of KVTHOWEEDGE.
|
|
k2edgewe
|
0.0
|
Vth shift due to Vertical Non-uniform doping due to Well proximity in EDGEFET.
|
|
lk2edgewe
|
0.0
|
Length dependence of K2WEEDGE.
|
|
wk2edgewe
|
0.0
|
Width dependence of K2WEEDGE.
|
|
pk2edgewe
|
0.0
|
Area dependence of K2WEEDGE.
|
|
stk2edge
|
0.0 m
|
K2 shift factor related to Vth change.
|
|
lstk2edge
|
0.0 m2
|
Length dependence of STK2EDGE.
|
|
wstk2edge
|
0.0 m2
|
Width dependence of STK2EDGE.
|
|
pstk2edge
|
0.0 m3
|
Area dependence of STK2EDGE.
|
|
steta0edge
|
0.0 m
|
ETA0 shift related to Vth0 change.
|
|
lsteta0edge
|
0.0 m2
|
Length dependence of STETA0EDGE.
|
|
wsteta0edge
|
0.0 m2
|
Width dependence of STETA0EDGE.
|
|
psteta0edge
|
0.0 m3
|
Area dependence of STETA0EDGE.
|
|
igclamp
|
1
|
Model flag for Ig clamping.
|
|
lp
|
1.0e-5 m
|
Length scaling parameter for thermal noise.
|
|
rnoik
|
0.0
|
Exponential coefficient for enhanced correlated thermal noise.
|
|
tnoik
|
0.0 1/m
|
Empirical parameter for Leff trend of Sid at low Ids.
|
|
tnoik2
|
0.1 1/m
|
Empirical parameter for sensitivity of RNOIK.
|
|
k0
|
0.0
|
Non-saturation effect parameter for strong inversion region.
|
|
lk0
|
0.0 m
|
Length dependence of K0.
|
|
wk0
|
0.0 m
|
Width dependence of K0.
|
|
pk0
|
0.0 m2
|
Area dependence of K0.
|
|
k01
|
0.0 1/K
|
Temperature coefficient for K0.
|
|
lk01
|
0.0 m/K
|
Length dependence of K0.
|
|
wk01
|
0.0 m/K
|
Width dependence of K0.
|
|
pk01
|
0.0 m2/K
|
Area dependence of K0.
|
|
m0
|
1.0
|
offset of non-saturation effect parameter for strong inversion region.
|
|
lm0
|
0.0 m
|
Length dependence of M0.
|
|
wm0
|
0.0 m
|
Width dependence of M0.
|
|
pm0
|
0.0 m2
|
Area dependence of M0.
|
|
m01
|
0.0 1/K
|
Temperature coefficient for M0.
|
|
lm01
|
0.0 m/K
|
Length dependence of M01.
|
|
wm01
|
0.0 m/K
|
Width dependence of M01.
|
|
pm01
|
0.0 m2/K
|
Area dependence of M01.
|
|
nedge
|
1
|
Flicker noise parameter for edge fet transistor.
|
|
noia1_edge
|
0.0
|
Flicker noise fitting parameter in strong inversion for edge fet transistor.
|
|
noiax_edge
|
1.0
|
Flicker noise fitting parameter in strong inversion for edge fet transistor.
|
|
fnoimod
|
0
|
Flicker noise model selector.
|
|
lh
|
1.0e-8 m
|
Length of halo transistor.
|
|
noia2
|
6.250e40 s^(1-EF)/(eV)^1/m3
|
Flicker noise parameter A for Halo.
|
|
hndep
|
1e24 1/m3
|
Halo doping concentration for I-V.
|
|
c0
|
0.0 V
|
Lateral NUD1 voltage parameter.
|
|
lc0
|
0.0 V m
|
Length dependence of C0.
|
|
wc0
|
0.0 V m
|
Width dependence of C0.
|
|
pc0
|
0.0 V m2
|
Area dependence of C0.
|
|
c01
|
0.0 1/K
|
Temperature dependence of lateral NUD1 voltage parameter.
|
|
lc01
|
0.0 m/K
|
Length dependence of C01.
|
|
wc01
|
0.0 m/K
|
Width dependence of C01.
|
|
pc01
|
0.0 m2/K
|
Area dependence of C01.
|
|
c0si
|
1.0 V
|
Correction factor for strong inversion used in Mnud1. After binning it should be within (0 : inf).
|
|
lc0si
|
0.0 V m
|
Length dependence of C0SI.
|
|
wc0si
|
0.0 V m
|
Width dependence of C0SI.
|
|
pc0si
|
0.0 V m2
|
Area dependence of C0SI.
|
|
c0si1
|
0.0 1/K
|
Temperature dependence of C0SI1.
|
|
lc0si1
|
0.0 m/K
|
Length dependence of C0SI1.
|
|
wc0si1
|
0.0 m/K
|
Width dependence of C0SI1.
|
|
pc0si1
|
0.0 m2/K
|
Area dependence of C0SI1.
|
|
c0sisat
|
0.0 V
|
Correction factor for strong inversion used in Mnud1.
|
|
lc0sisat
|
0.0 V m
|
Length dependence of C0SISAT.
|
|
wc0sisat
|
0.0 V m
|
Width dependence of C0SISAT.
|
|
pc0sisat
|
0.0 V m2
|
Area dependence of C0SISAT.
|
|
c0sisat1
|
0.0 1/K
|
Temperature dependence of C0SISAT1.
|
|
lc0sisat1
|
0.0 m/K
|
Length dependence of C0SISAT1.
|
|
wc0sisat1
|
0.0 m/K
|
Width dependence of C0SISAT1.
|
|
pc0sisat1
|
0.0 m2/K
|
Area dependence of C0SISAT1.
|
|
minr
|
0.001 Ω
|
minr is the value below which the simulator expects elimination of source/drain resistance and it will improve simulation efficiency without significantly altering the results..
|
|
abulk
|
1.0
|
For flexibility of tuning Cgg in strong inversion.
|
|
a0
|
0.0
|
Coefficient of depletion width dependence in AbulkIV for Id-Vd flexibility.
|
|
ags
|
0.0
|
Coefficient of Source Charge dependence in AbulkIV for Id-Vd flexibility.
|
|
ags1
|
1.0
|
qs nonlinear term for Id-Vd flexibility.
|
|
keta
|
0.0
|
Coefficient of back-bias dependence in AbulkIV for Id-Vd flexibility.
|
|
a0cv
|
0.0
|
Coefficient of depletion width dependence in AbulkCV for Capacitance flexibility.
|
|
agscv
|
0.0
|
Coefficient of Source Charge dependence in AbulkCV for Capacitance flexibility.
|
|
ketacv
|
0.0
|
Coefficient of back-bias dependence in AbulkCV for Capacitance flexibility.
|
|
rbody
|
0.0 ohm/square
|
Intrinsic body contact sheet resistance.
|
|
rbsh
|
0.0 ohm/square
|
Extrinsic body contact sheet resistance.
|
|
rhalo
|
1e15 ohm/m
|
body halo sheet resistance.
|
|
ub
|
67.0e-3 m2/V/s
|
Mobility of majority carriers in body..
|
|
lub
|
0.0 m3/V/s
|
Length dependence of UB.
|
|
wub
|
0.0 m3/V/s
|
Width dependence of UB.
|
|
pub
|
0.0 m4/V/s
|
Area dependence of UB.
|
|
ubte
|
1.0
|
Mobility temperature exponent.
|
|
lubte
|
0.0 m
|
Length dependence of UBTE.
|
|
wubte
|
0.0 m
|
Width dependence of UBTE.
|
|
pubte
|
0.0 m2
|
Area dependence of UBTE.
|
|
neff
|
5e24 1/m3
|
Effective substrate doping.
|
|
lneff
|
0.0 1/m2
|
Length dependence of NEFF.
|
|
wneff
|
0.0 1/m2
|
Width dependence of NEFF.
|
|
pneff
|
0.0 1/m
|
Area dependence of NEFF.
|
|
dwbc
|
0.0 m
|
Width offset for body contact isolation edge.
|
|
eggbcp2
|
1.12 eV
|
Bandgap in Agbcp2 region.
|
|
nsub
|
6.0e16 cm-3
|
Substrate doping concentration with polarity.
|
|
lnsub
|
0.0
|
Length dependence of nsub.
|
|
wnsub
|
0.0
|
Width dependence of nsub.
|
|
pnsub
|
0.0
|
Cross-term dependence of nsub.
|
|
fbody
|
1.0
|
Scaling factor for body charge.
|
|
kb1
|
1.0
|
Scaling factor for backgate charge.
|
|
lkb1
|
0.0
|
Length dependence of kb1.
|
|
wkb1
|
0.0
|
Width dependence of kb1.
|
|
pkb1
|
0.0
|
Cross-term dependence of kb1.
|
|
dlbg
|
0.0 m
|
Length offset fitting parameter for backgate charge.
|
|
dlcb
|
0.0 m
|
Length offset fitting parameter for body charge.
|
|
csdesw
|
0.0 F/m
|
Source/drain sidewall fringing capacitance per unit length.
|
|
csdmin
|
0.0 V
|
Source/drain bottom diffusion minimum capacitance.
|
|
acesb
|
2.0
|
First fitting parameter for drain to bottom capacitance.
|
|
bcesb
|
0.0 V
|
Second fitting parameter for drain to bottom capacitance.
|
|
acedb
|
2.0
|
First fitting parameter for drain to bottom capacitance.
|
|
bcedb
|
0.0 V
|
Second fitting parameter for drain to bottom capacitance.
|
|
lmin
|
0.0 m
|
Minimum channel length for which the model is valid.
|
|
lmax
|
1.0 m
|
Maximum channel length for which the model is valid.
|
|
wmin
|
0.0 m
|
Minimum channel width for which the model is valid.
|
|
wmax
|
1.0 m
|
Maximum channel width for which the model is valid.
|
|
l
|
1.0e-5 m
|
NULL.
|
|
w
|
1.0e-5 m
|
|
|
nf
|
1
|
|
