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1
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nflag=on
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Noise Model.
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2
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area=1
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Device area factor (Does not scale parasitic inductors or capacitors).
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3
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tnom
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Reference (extraction) temperature.
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4
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tbp=298.15
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Base-plate temperature.
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5
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selft=off
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Self-Heating flag.
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6
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ext_flag=0
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AWR-Extensions flag.
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7
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re=0
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Emitter resistance.
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8
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rci=0
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Intrinsic collector resistance.
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9
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rcx=0
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Extrinsic collector resistance.
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10
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rbi=0
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Intrinsic base resistance.
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11
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rbx=0
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Extrinsic base resistance.
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12
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is=1e-25
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Collector-Emitter current: Forward collector saturation current.
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13
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nf=1
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Collector-Emitter current: Forward collector current ideality factor.
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14
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isr=1e-15
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Collector-Emitter current: Reverse emitter saturation current.
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15
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nr=1
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Collector-Emitter current: Reverse emitter current ideality factor.
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16
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ish=1e-27
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Base-Emitter current: Ideal base-emitter current.
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17
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nh=1
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Base-Emitter current: Ideal base-emitter current ideality factor.
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18
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ise=1e-25
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Base-Emitter current: Non-ideal base-emitter current.
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19
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ne=2
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Base-Emitter current: Non-ideal base-emitter current ideality factor.
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20
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isrh=1-e25
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Base-Collector current: Ideal base-collector saturation current.
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21
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nrh=2
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Base-Collector current: Ideal base-collector current ideality factor.
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22
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isc=1e-20
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Base-Collector current: Non-ideal base-collector saturation current.
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23
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nc=2
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Base-Collector current: Non-ideal base-collector current ideality factor.
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24
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abel=0
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Base-Emitter current: Portion of base-emitter current allocated to extrinsic region.
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25
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vaf=500
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Forward Early voltage.
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26
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var=500
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Reverse Early voltage.
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27
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isa=1e10
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Base-emitter heterojunction saturation current (BE barrier effects).
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28
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na=2
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Base-emitter heterojunction ideality factor.
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29
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isb=1e10
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Base-collector heterojunction current (BC barrier effects).
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30
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nb=2
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Base-collector heterojunction ideality factor.
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31
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ikdc1=1
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Soft knee effect: Transition width in Ic of q3 function.
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32
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ikdc2inv=0
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Soft knee effect: slope of q3 function (1/Amp).
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33
|
ikdc3=1
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Soft knee effect: Critical current at which soft knee effect occurs at Vcb=VJC.
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34
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vkdcinv=0.1
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Soft knee effect: Transition width of Vcb (in inverse voltage) (1/Volt).
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35
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nkdc=3
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Soft knee effect: maximum value of q3.
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36
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gkdc=0
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Soft knee effect: Exponent of q3 factor in base current.
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37
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ik=1e10
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High current roll-off in Beta.
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38
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cje=0
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Base-emitter capacitance: zero-bias capacitance.
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39
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vje=1.6
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Base-emitter capacitance: built- in voltage.
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40
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mje=0.5
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Base-emitter capacitance: grading factor (0.1<MJE).
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41
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cemax=1e-13
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Base-emitter capacitance: maximum value in forward bias.
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42
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vpte=1
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Base-emitter capacitance: punchthrough voltage.
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43
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mjer=0.05
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Base-emitter capacitance: grading factor beyond punchthrough.
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44
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abex=0
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Base-emitter capacitance: ratio between extrinsic and total base-emitter regions.
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45
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cjc=0
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Base-collector capacitance: zero-bias capacitance.
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46
|
vjc=1.4
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Base-collector capacitance: built-in voltage.
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47
|
mjc=0.33
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Base-collector capacitance: grading factor (0.1<MJC).
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48
|
ccmax=9e-14
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Base-collector capacitance: maximum value in forward bias.
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49
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vptc=3
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Base-collector capacitance: punchthrough voltage.
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50
|
mjcr=0.03
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Base-collector capacitance: grading factor beyond punchthrough.
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51
|
abcx=0.75
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Ratio between extrinsic and total base-collector regions.
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52
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tfb=0
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Base transit time: delay through the base.
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53
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fextb=0.2
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Base transit time: fraction of base transit time charge allocated to the base-collector junction.
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54
|
tfc0=0
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Collector transit time: low current transit time.
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55
|
tcmin=5e-13
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Collector transit time: high current transit time.
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56
|
itc=0
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Collector transit time: midpoint in collector current between TFC0 and TCMIN.
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57
|
itc2=0
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Collector transit time: transition width in collector current between TFC0 and TCMIN.
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58
|
vtc0ivn=0.3
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Collector transit time: rate of change of TFC0 with Vcb (in inverse saturation).
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59
|
vtr0=2
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Collector transit time: transition width in Vcb to VMX0 (models velocity saturation).
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60
|
vmx0=2
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Collector transit time: maximum Vcb for TFC0 (models velocity saturation).
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61
|
vtcmininv=0.5
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Collector transit time: rate of change of TCMIN with Vbc (in inverse voltage) (1/Volt).
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62
|
vtrmin=1
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Collector transit time: transition width in Vcb to VMXMIN (models velocity saturation).
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63
|
vmxmin=1
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Collector transit time: maximum Vcb for TCMIN (models velocity saturation).
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64
|
vtcinv=0.1
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Collector transit time: rate of change of ITC with Vcb (in inverse voltage) (1/Volt).
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65
|
vtc2inv=0.8
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Collector transit time: rate of change of ITC2 with Vcb (in inverse voltage) (1/Volt).
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66
|
fextc=0.8
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Collector transit time: fraction of the collector transit time charge allocated to the base-collector junction.
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67
|
tkrk=0
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Kirk effect: Kirk effect delay time.
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68
|
ikrk=1e3
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Kirk effect: critical current for Kirk effect at Vbc=0.
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69
|
ikrktr=1e-6
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Kirk effect: transition width to prevent Ikirk=0 (use sparingly).
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70
|
vkrk=10
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Kirk effect: rate of change of IKRK with Vcb.
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71
|
vkrk2inv=0.2
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Kirk effect: rate of change of TKRK with Vcb (in inverse voltage) (1/Volt).
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72
|
gkrk=4
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Kirk effect: exponent of kirk effect delay.
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73
|
vktr=1
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Kirk effect: transition width in Vcb to VKMX.
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74
|
vkmx=1
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Kirk effect: Maximum Vcb for TKRK.
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75
|
fexke=0.2
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Kirk effect: fraction of the Kirk effect charge allocated ti the base-collector junction.
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76
|
tr=3.5e-10
|
Reverse transit time.
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|
77
|
cpce=0
|
Parasitic/Fringing collector-emitter capacitance.
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|
78
|
cpbe=0
|
Parasitic/Fringing base-emitter capacitance.
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|
79
|
cpbc=0
|
Parasitic/Fringing base-collector capacitance.
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|
80
|
lpc=0
|
Parasitic collector inductance.
|
|
81
|
lpb=0
|
Parasitic base inductance.
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|
82
|
lpe=0
|
Parasitic emitter inductance.
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|
83
|
xrb=0
|
Temperature exponent for RBI and RBX.
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|
84
|
xrc=0
|
Temperature exponent for RCI and RCX.
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|
85
|
xre=0
|
Temperature exponent for RE.
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|
86
|
tvje==0
|
Rate of change in temperature of VJE (Volt/K).
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|
87
|
tvpe=0
|
Rate of change in temperature of VPTE (Volt/K).
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|
88
|
tvjc=0
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Rate of change in temperature of VJC (Volt/K).
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89
|
tvpc=0
|
Rate of change in temperature of VPTC (Volt/K).
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|
90
|
ege=1.55
|
Effective emitter bandgap parameter.
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|
91
|
tnf=0
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Rate of change in temperature of NF.
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|
92
|
xtis=3
|
Temperature exponent for IS.
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|
93
|
xtih=4
|
Temperature exponent for ISH.
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|
94
|
xtie=3
|
Temperature exponent for ISE.
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|
95
|
egc=1.5
|
Effective collector bandgap parameter.
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|
96
|
tnr=0
|
Rate of change in temperature of NR.
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|
97
|
xtir=3
|
Temperature exponent for ISR.
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|
98
|
xtic=3
|
Temperature exponent for ISC.
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|
99
|
xtirh=4
|
Temperature exponent for ISRH.
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|
100
|
xtik3=0
|
Temperature exponent for IKDC3.
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|
101
|
eaa=0
|
Temperature dependence of ISA.
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|
102
|
eab=0
|
Temperature dependence of ISB.
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|
103
|
xtfb=0
|
Temperature exponent for TFB.
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|
104
|
xtcmin=0
|
Temperature exponent for TCMIN.
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|
105
|
xtfc0=0
|
Temperature exponent for TFC0.
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|
106
|
xtitc=0
|
Temperature exponent for ITC.
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|
107
|
xtitc2=0
|
Temperature exponent for ITC2.
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|
108
|
xttkrk=0
|
Temperature exponent for TKRK.
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|
109
|
xtikrk=0
|
Temperature exponent for IKRK.
|
|
110
|
xtvkrk=0
|
Temperature exponent for VKRK.
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|
111
|
rth1=1000
|
Thermal resistance #1 (Kelvin/Watt).
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|
112
|
cth1=5e-10
|
Thermal capacitance #1 (Sec-Amp/Volt).
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|
113
|
xth1=0
|
Temperature exponent for Rth1.
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|
114
|
rth2=0
|
Thermal resistance #2 (Kelvin/Watt).
|
|
115
|
cth2=0
|
Thermal capacitance #2 (Sec-Amp/Volt).
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|
116
|
xth2=0
|
Temperature exponent for Rth2.
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|
117
|
kf=0
|
Flicker noise coefficient.
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|
118
|
af=1
|
Flicker noise exponent.
|
|
119
|
ffe=1
|
Flicker noise frequency exponent.
|
|
120
|
kb=0
|
Burst noise coefficient.
|
|
121
|
ab=1
|
Burst noise exponent.
|
|
122
|
fb=1
|
Burst noise corner frequency.
|
|
123
|
imax=10
|
Explosion current.
|
|
124
|
bkdn=0
|
Breakdown current flag.
|
|
125
|
bf=1000
|
Forward ideal current gain.
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|
126
|
br=1000
|
Reverse ideal current gain.
|
|
127
|
isex=1e-25
|
Saturation current for emitter leakage diode.
|
|
128
|
nex=2
|
Ideality factor for emitter leakage diode.
|
|
129
|
iscx=1e-30
|
Saturation current for extrinsic BC junction current.
|
|
130
|
ncx=2
|
Ideality factor for extrinsic BC junction current.
|
|
131
|
fa=0.9
|
Factor to specify avalanche voltage.
|
|
132
|
bvc=50
|
C-B breakdown voltage (BVcb0); positive.
|
|
133
|
nbc=8
|
Exponent for BC multiplication factors versus voltage.
|
|
134
|
ics=1e-30
|
Saturation value for collector-substrate current.
|
|
135
|
ncs=2
|
Ideality factor for collector-substrate current.
|
|
136
|
rex=1e-3
|
Extrinsic emitter leakage diode series resistance.
|
|
137
|
cemin=1e-40
|
Min value for intrinsic BC capacitance.
|
|
138
|
fce=0.8
|
Factor for BE capacitance approximation near Vbi.
|
|
139
|
ccmin=1e-40
|
Min valuer of intrinsic BC capacitance.
|
|
140
|
fc=0.8
|
Factor for BC capacitance approximation near Vbi.
|
|
141
|
cjcx=0
|
Extrinsic BC capacitance at zero voltage.
|
|
142
|
vjcx=1.4
|
Extrinsic BC capacitance Vbi.
|
|
143
|
mjcx=0.33
|
Extrinsic base-collector capacitance: grading factor (0.1<MJCX).
|
|
144
|
cxmin=1e-40
|
Minimum extrinsic BC capacitance.
|
|
145
|
xcjc=0
|
Factor for partitioning BC capacitance.
|
|
146
|
cjs=0
|
Substrate depletion capacitance at zero voltage.
|
|
147
|
vjs=1.4
|
Built-in potential for substrate capacitance.
|
|
148
|
mjs=0.5
|
Substrate capacitance: grading factor (0.1<MJS).
|
|
149
|
tbexs=0
|
Excess BE transit time.
|
|
150
|
tbcxs=0
|
Excess BC transit time.
|
|
151
|
icrit0=1e3
|
Critical current for junction capacitance.
|
|
152
|
vtc=1e3
|
Characteristic voltage for TFC.
|
|
153
|
trx=0
|
Reverse storage time for extrinsic BC diode.
|
|
154
|
fex=0
|
Excess phase factor.
|
|
155
|
rth=1e-8
|
Thermal resistance.
|
|
156
|
cth=1e-6
|
Thermal capacitance.
|
|
157
|
xti=2
|
Exponent for IS temperature dependence.
|
|
158
|
xtb=2
|
Exponent for beta temperature dependence.
|
|
159
|
tne=0
|
Coefficient for NE temperature dependence.
|
|
160
|
tnc=0
|
Coefficient for NC temperature dependence.
|
|
161
|
tnex=0
|
Coefficient for NEX temperature dependence.
|
|
162
|
eg=1.5
|
Activation energy for IS temperature dependence.
|
|
163
|
eae=0
|
Activation energy for ISE temperature dependence.
|
|
164
|
eac=0
|
Activation energy for ISC temperature dependence.
|
|
165
|
eax=0
|
Activation energy for ISEX temperature dependence.
|
|
166
|
xrex=0
|
Coefficient for REX temperature dependence.
|
|
167
|
tvjcx=0
|
Coefficient for VJCX temperature dependence.
|
|
168
|
tvjs=0
|
Coefficient for VJS temperature dependence.
|
|
169
|
xttf=0
|
Coefficient for TF temperature dependence.
|
|
170
|
xrt=0
|
Coefficient for RTH temperature dependence.
|
|
171
|
dtmax=500
|
Maximum temperature rise above heatsink in Celsius degrees.
|
|
172
|
compat=0
|
Model compatibility selector.
|
