mult=1

Number of devices in parallel.

printscaled=0

Print scaled parameter info if value not equal to zero.

trise=0 K

Difference between the local ambient and global ambient temperature.

region=fwd

Estimated DC operating region, used as a convergence aid. Possible values are off, sat, rev, and fwd.

m=1

Alias of mult.

area=1

Multiplication factor for bjt devices.

level=504

Bipolar Level.

paramchk=0

Level of clip warning info.

mexlev=2

Flag for ELDO model.

tref=25 deg. C

Reference temperature.

dta=0 K

Difference between the local ambient and global ambient temperature.

exmod=1

Flag for extended modelling of reverse current gain.

exphi=1

Flag for the distributed high-frequency effects in transient.

exavl=0

Flag for extended modelling of avalanche currents.

is=2.2e-17 A

Collector-emitter saturation current.

ik=0.1 A

Collector-emitter high injection knee current.

ver=2.5 V

Reverse Early voltage.

vef=44 V

Forward Early voltage.

bf=215

Ideal forward current gain.

ibf=2.7e-15 A

Saturation current of the non-ideal forward base current.

mlf=2

Non ideality factor of the non-ideal forward base current.

xibi=0

Part of ideal base current that belongs to the sidewall.

izeb=0 A

Pre-factor of emitter-base Zener tunneling current.

nzeb=22

Coefficient of emitter-base Zener tunneling current.

bri=7

Ideal reverse current gain.

ibr=1e-15 A

Saturation current of the non-ideal reverse base current.

vlr=0.2 V

Cross-over voltage of the non-ideal reverse base current.

xext=0.63

Part of Iex, Qtex, Qex and Isub that depends on Vbc3(Vbc3) instead of Vb1c4(Vb1c4).

wavl=1.1e-06 m

Epilayer thickness used in weak-avalanche model.

vavl=3 V

Voltage determining curvature of avalanche current.

sfh=0.3

Current spreading factor of avalanche model (when EXAVL=1).

re=5 Ω

Emitter resistance.

rbc=23 Ω

Constant part of the base resistance.

rbv=18 Ω

Zero-bias value of the variable part of the base resistance.

rcc=12 Ω

Collector contact resistance.

rcblx=0

Resistance of collector buried layer under the extrinsic transistor.

rcbli=0

Resistance of collector buried layer under the Intrinsic transistor.

rcv=150 Ω

Resistance of the un-modulated epilayer.

scrcv=1.25e+03 Ω

Space charge resistance of the epilayer.

ihc=0.004 A

Critical current for velocity saturation in the epilayer.

axi=0.3

Smoothness parameter for the onset of quasi-saturation.

cje=7.3e-14 F

Zero-bias emitter-base depletion capacitance.

vde=0.95 V

Emitter-base diffusion voltage.

pe=0.4

Emitter-base grading coefficient.

xcje=0.4

Fraction of the emitter-base depletion capacitance that belongs to the sidewall.

cbeo=0

Emitter-base overlap capacitance.

cjc=7.8e-14 F

Zero-bias collector-base depletion capacitance.

vdc=0.68 V

Collector-base diffusion voltage.

pc=0.5

Collector-base grading coefficient.

xp=0.35

Constant part of Cjc.

mc=0.5

Coefficient for the current modulation of the collector-base depletion capacitance.

xcjc=0.032

Fraction of the collector-base depletion capacitance under the emitter.

cbco=0

Collector-base overlap capacitance.

mtau=1

Non-ideality factor of the emitter stored charge.

taue=2e-12 s

Minimum transit time of stored emitter charge.

taub=4.2e-12 s

Transit time of stored base charge.

tepi=4.1e-11 s

Transit time of stored epilayer charge.

taur=5.2e-10 s

Transit time of reverse extrinsic base charge.

deg=0 eV

Bandgap difference over the base.

xrec=0

Pre-factor of the recombination part of Ib1.

xqb=0.333

Fraction of the total base charge supplied by the collector instead of the base (Base charge partitioning).

aqbo=0.3

Temperature coefficient of the zero-bias base charge.

ae=0

Temperature coefficient of the resistivity of the emitter.

ab=1

Temperature coefficient of the resistivity of the base.

dais=0

Parameter for fine tuning of temperature dependence of collector-emitter saturation current.

aepi=2.5

Temperature coefficient of the resistivity of the epilayer.

aex=0.62

Temperature coefficient of the resistivity of the extrinsic base.

ac=2

Temperature coefficient of the resistivity of the collector contact.

acbl=2

Temperature coefficient of the resistivity of the collector buried layer.

dvgbf=0.05 V

Bandgap voltage difference of forward current gain.

dvgbr=0.045 V

Bandgap voltage difference of reverse current gain.

vgb=1.17 V

Bandgap voltage of the base.

vgc=1.18 V

Bandgap voltage of the collector.

vgj=1.15 V

Bandgap voltage recombination emitter-base junction.

vgzeb=1.15 V

Band-gap at reference temperature relevant to the Zener effect in the emitter-base junction.

avgeb=0.000473 V/K

Temperature scaling coefficient of emitter-base Zener tunneling current.

tvgeb=636 K

Temperature scaling coefficient of emitter-base Zener tunneling current.

dvgte=0.05 V

Bandgap voltage difference of emitter stored charge.

af=2

Exponent of the Flicker-noise.

kf=2e-11

Flicker-noise coefficient of the ideal base current.

kfn=2e-11

Flicker-noise coefficient of the non-ideal base current.

kavl=0

Switch for white noise contribution due to avalanche.

kavlver=504

Switch for avalanche noise of 504.11 and 504.12.

kc=0

Switch for RF correlation noise model selection.

ke=0

Fraction of QE in excess phase shift.

ftaun=0

Fraction of noise transit time to total transit time.

rth=300 K/W

Thermal resistance.

cth=3e-09 J/K

Thermal capacitance.

ath=0

Temperature coefficient of the thermal resistance.

vexlim=400

Upper limit of exp() function argument for convergence.

subs=1

Flag of supporting substrate or not.

type=npn

Transistor gender. Possible values are npn, pnp, npnv, pnpv, npnl, and pnpl.

imax=1000 A

Explosion current.

mvt0=0.0

Threshold mismatch intercept.

tnom (deg. C)

Parameters measurement temperature.

tr (deg. C)

Alias of tnom.

compatible=spectre

Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, spiceplus, eldo, sspice, mica, and pspice.

tempeff (C)

Effective temperature for a single device.

meff

Effective multiplicity factor (m-factor).

Ic (A)

External DC collector current.

Ib (A)

External DC base current.

Ie (A)

External DC emitter current.

BetaDC

External DC current gain Ic/Ib.

Vbe (V)

External base-emitter bias.

Vbc (V)

External base-collector bias.

Vce (V)

External collector-emitter bias.

Vb2e1 (V)

Internal base-emitter bias.

Vb2c2 (V)

Internal base-collector bias.

Vb2c1 (V)

Internal base-collector bias including epilayer.

Vb1c1 (V)

External base-collector bias without contact resistances.

Vb1c4 (V)

External base-collector bias with contact resistance RCBLI.

Vc3c4 (V)

External collector-collector bias over contact resistance RCBLX.

Vc4c1 (V)

Bias over intrinsic buried layer.

Ve1e (V)

Bias over emitter resistance.

In (A)

Main current.

Ic1c2 (A)

Epilayer current.

Ib1b2 (A)

Pinched-base current.

Ib1 (A)

Ideal forward base current.

SIb1 (A)

Ideal side-wall base current.

Izteb (A)

Zener tunneling current in the emitter base junction.

Ib2 (A)

Non-ideal forward base current.

Ib3 (A)

Non-ideal reverse base current.

Iex (A)

Extrinsic reverse base current.

XIex (A)

Extrinsic reverse base current.

Iavl (A)

Avalanche current.

IRE (A)

Current through emitter resistance.

IRBC (A)

Current through constant base resistance.

IRCC (A)

Current through collector contact resistance.

IRCBLX (A)

Current through extrinsic collector resistance.

IRCBLI (A)

Current through intrinsic collector resistance.

Qe (C)

Emitter charge or emitter neutral charge.

Qte (C)

Base-emitter depletion charge.

SQte (C)

Sidewall base-emitter depletion charge.

Qbe (C)

Base-emitter diffusion charge.

Qbc (C)

Base-collector diffusion charge.

Qtc (C)

Base-collector depletion charge.

Qepi (C)

Epilayer diffusion charge.

Qb1b2 (C)

AC current crowding charge.

Qtex (C)

Extrinsic base-collector depletion charge.

XQtex (C)

Extrinsic base-collector depletion charge.

Qex (C)

Extrinsic base-collector diffusion charge.

XQex (C)

Extrinsic base-collector diffusion charge.

gx (1/Ω)

Forward transconductance.

gy (1/Ω)

Reverse transconductance.

gz (1/Ω)

Reverse transconductance.

Sgpi (1/Ω)

Conductance sidewall b-e junction.

gpix (1/Ω)

Conductance floor b-e junction.

gpiy (1/Ω)

Early effect on recombination base current.

gpiz (1/Ω)

Early effect on recombination base current.

gmux (1/Ω)

Early effect on avalanche current limiting.

gmuy (1/Ω)

Conductance of avalanche current.

gmuz (1/Ω)

Conductance of avalanche current.

gmuex (1/Ω)

Conductance extrinsic b-c junction.

Xgmuex (1/Ω)

Conductance extrinsic b-c junction.

grcvy (1/Ω)

Conductance of the epilayer current.

grcvz (1/Ω)

Conductance of the epilayer current.

Rbv (Ω)

Base resistance.

grbvx (1/Ω)

Early-effect on base resistance.

grbvy (1/Ω)

Early-effect on base resistance.

grbvz (1/Ω)

Early-effect on base resistance:.

RE (Ω)

Emitter resistance.

RBC (Ω)

Constant part of the base resistance.

RCC (Ω)

Collector contact resistance.

RCBLX (Ω)

Resistance of collector buried layer under the extrinsic transistor.

RCBLI (Ω)

Resistance of collector buried layer under the Intrinsic transistor.

SCbe (F)

Capacitance sidewall b-e junction.

Cbex (F)

Capacitance floor b-e junction.

Cbey (F)

Early effect on b-e diffusion charge.

Cbez (F)

Early effect on b-e diffusion charge.

Cbcx (F)

Early effect on b-c diffusion charge.

Cbcy (F)

Capacitance floor b-c junction.

Cbcz (F)

Capacitance floor b-c junction.

Cbcex (F)

Capacitance extrinsic b-c junction.

XCbcex (F)

Capacitance extrinsic b-c junction.

Cb1b2 (F)

Capacitance AC current crowding.

Cb1b2x (F)

Cross-capacitance AC current crowding.

Cb1b2y (F)

Cross-capacitance AC current crowding.

Cb1b2z (F)

Cross-capacitance AC current crowding.

gm (1/Ω)

Transconductance.

beta

Current amplification.

gout (1/Ω)

Output conductance.

gmu (1/Ω)

Feedback transconductance.

RB (Ω)

Base resistance.

Cbe (F)

Base-emitter capacitance.

Cbc (F)

Base-collector capacitance.

fT (Hz)

Good approximation for cut-off frequency.

Iqs (A)

Current at onset of quasi-saturation.

XiWepi (M)

Thickness of injection layer.

Vb2c2star (V)

Physical value of internal base-collector bias.

Pdiss (W)

Dissipation.

pwr (W)

Dissipation.

TK (K)

Actual temperature.

jtype

Type: +1=npn and -1=pnp.

w_estimate (M)

l_estimate (M)