Product Documentation
Spectre Circuit Simulator Components and Device Models Reference
Product Version 23.1, June 2023

Diode Level 500 (dio500)

The dio500 model provides a detailed description of the diode currents in forward and reverse biased Si-diodes. It is described in the Philips Bipolar Modelbook (Dec.93) as Diode level 500. Information on how to obtain this document can be found on Source Link by searching for Philips.

(c) Philips Electronics N.V. 1994

In extension to the model book description a minimum conductance gmin is inserted between the diode nodes to aid convergence. The value of gmin is set by an options statement, default is gmin = 1.0e-12 S.

The imax parameter is used to aid convergence and to prevent numerical overflow. The junction characteristics of the diode are accurately modeled for currents up to imax. For currents above imax, the junction is modeled as a linear resistor, and a warning is printed.

This device is supported within altergroups.

This device is dynamically loaded from the shared object /vols/mmsimP4_t1b_006/ws/ling/ling_2110_isr3_mif/spectre_dev/tools.lnx86/cmi/lib/64bit/5.0.doc/libphilips_sh.so.

Sample Instance Statement

d1 (pnode 0) phdiode area=2

Sample Model Statement

model phdiode dio500 is=3.5e-12 rs=26.3 n=2.7 imax=1e20 vlc=1.8 vbr=9.63 cj=2.65e-11 dta=12.88 tau=7.5e-10 tnom=25

Instance Syntax

Name  a  k ModelName parameter=value ...

Instance Parameters

area=1.0

Multiplication factor.

mult

Alias of area factor.

m=1.0

Multiplicity factor.

region=fwd

Estimated DC operating region, which is used as a convergence aid. Possible values are fwd, rev or brk.

trise= (K)

Temperature rise from ambient

Model Syntax

model modelName dio500 parameter=value ...

Model Parameters

is=7.13e-13 A

Saturation current.

n=1.044

Junction emission coefficient.

vlc=0.0 V

Voltage dependence at low forward currents.

vbr=7.459 V

Breakdown voltage.

emvbr=1.36e+06 V/cm

Electric field at breakdown.

csrh=7.44e-07 A/cm

Shockley-Read-Hall generation.

cbbt=3.255 A/V

Band to band tunneling.

ctat=3.31e-06 A/cm

Trap assisted tunneling.

rs=0.0

Series resistance.

tau=500.0e-12 s

Transit time.

cj=7.0e-12 F

Zero-bias depletion capacitance.

vd=0.9 V

Diffusion voltage.

p=0.4

Grading coefficient.

tref (C)

Reference temperature. Default set by option tnom.

tnom (C)

Alias of tref.

tr (C)

Alias of tref.

vg=1.206 V

Bandgap voltage.

ptrs=0.0

Power for temperature dependence of rs.

kf=0.0

Flickernoise coefficient.

af=1.0

Flickernoise exponent.

dta=0.0 K

Difference between device temperature and ambient temperature.

trise (K)

Alias of dta.

imax=1.0 A

Explosion current.

Operating-Point Parameters

vak (V)

Diode voltage, measured from anode to cathode (including rs).

id (A)

Total resistive diode current.

qd (Coul)

Diffusion charge.

qt (Coul)

Depletion charge.

rst ()

Series resistance (temperature updated).

rl ()

AC linearized resistance.

cl (F)

AC linearized capacitance.

ctotal (F)

AC linearized capacitance.

lx5 (F)

AC linearized capacitance.

pwr (W)

Power dissipation.

Related Topics

Philips Models

Lateral PNP Transistor (bjt301)

Lateral PNP Transistor (bjt500)

Lateral PNP Transistor (bjt500t)


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