Diode Level 500 (dio500)
The dio500 model provides a detailed description of the diode currents in forward and reverse biased Si-diodes. It is described in the Philips Bipolar Modelbook (Dec.93) as Diode level 500. Information on how to obtain this document can be found on Source Link by searching for Philips.
(c) Philips Electronics N.V. 1994
In extension to the model book description a minimum conductance gmin is inserted between the diode nodes to aid convergence. The value of gmin is set by an options statement, default is gmin = 1.0e-12 S.
The imax parameter is used to aid convergence and to prevent numerical overflow. The junction characteristics of the diode are accurately modeled for currents up to imax. For currents above imax, the junction is modeled as a linear resistor, and a warning is printed.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /vols/mmsimP4_t1b_006/ws/ling/ling_2110_isr3_mif/spectre_dev/tools.lnx86/cmi/lib/64bit/5.0.doc/libphilips_sh.so.
Sample Instance Statement
d1 (pnode 0) phdiode area=2
Sample Model Statement
model phdiode dio500 is=3.5e-12 rs=26.3 n=2.7 imax=1e20 vlc=1.8 vbr=9.63 cj=2.65e-11 dta=12.88 tau=7.5e-10 tnom=25
Instance Syntax
Name a k ModelName parameter=value ...
Instance Parameters
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Estimated DC operating region, which is used as a convergence aid. Possible values are |
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Model Syntax
model modelName dio500 parameter=value ...
Model Parameters
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Difference between device temperature and ambient temperature. |
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Operating-Point Parameters
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Diode voltage, measured from anode to cathode (including |
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Related Topics
Lateral PNP Transistor (bjt301)
Lateral PNP Transistor (bjt500)
Lateral PNP Transistor (bjt500t)
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