Lateral PNP Transistor (bjt301)
The bjt301 model provides an extensive description of a lateral integrated circuit junction-isolated PNP transistor. It is described in the Philips Bipolar Modelbook (Dec.93) as TPL level 301.
(c) Philips Electronics N.V. 1993
In extension to the model book description a minimum conductance gmin is inserted between the internal base and internal collector node, between the internal base and the internal emitter node, and between the external base and the substrate node to aid convergence. The value of gmin is set by an options statement, default = 1e-12 S.
The imax parameter is used to aid convergence and to prevent numerical overflow. The junction characteristics of the transistor are accurately modeled for currents up to imax. For currents above imax, the junction is modeled as a linear resistor and a warning is printed.
This device is supported within altergroups.
This device is dynamically loaded from the shared object /vols/mmsimP4_t1b_006/ws/ling/ling_2110_isr3_mif/spectre_dev/tools.lnx86/cmi/lib/64bit/5.0.doc/libphilips_sh.so
Sample Instance Statement:
q2 (minus net3 vcc) pnp_mod region=fwd area=1 m=1
Sample Model Statement:
model pnp_mod bjt301 type=pnp struct=lateral is=1e-14 bf=85 ilf=11e-9 ikf=95e-6 re=3.2 cje=0.352e-12
Instance Syntax
Name c b e [s] ModelName parameter=value ...
Instance Parameters
|
area=1
|
Area factor.
|
|
mult=1
|
Alias of area factor.
|
|
m=1
|
Multiplicity factor.
|
|
region=fwd
|
Estimated DC operating region; used as a convergence aid. Possible values are off, fwd, rev, and sat.
|
|
trise=0.0 K
|
Temperature rise from ambient.
|
Model Syntax
model modelName bjt301 parameter=value ...
Model Parameters
Structural parameters
|
type=pnp
|
Transistor type. Possible values are pnp or pnpl.
|
|
struct=lateral
|
Transistor structure. Possible values are lateral.
|
Current parameters
|
is=1.0e-15 A
|
Saturation current.
|
|
imax=1.0 A
|
Explosion current.
|
|
bf=100.0 A/A
|
Ideal forward common-emitter current gain (beta).
|
|
ilf=10.0e-9 A
|
Low-level knee-current of forward beta.
|
|
nlf=2.0
|
Emission coefficient of non-ideal forward base current.
|
|
ikf=100.0e-6 A
|
High-injection knee-current of forward beta.
|
|
nhf=1.0
|
Base widening exponent.
|
|
veaf=50.0 V
|
Early voltage related to collector junction.
|
|
br=10.0 A/A
|
Ideal reverse common-collector current gain (beta).
|
|
ilr=10.0e-9 A
|
Low-level knee-current of reverse beta.
|
|
nlr=2.0
|
Emission coefficient of non-ideal reverse base current.
|
|
ikr=100.0e-6 A
|
High-injection knee-current of reverse beta.
|
|
iks=100.0e-6 A
|
High-injection current of substrate effect.
|
|
xcs=1.0
|
Current fraction of c-b-s transistor.
|
|
xes=0.01
|
Current fraction of e-b-s transistor.
|
Parasitic resistance parameters
|
rc=1.0 Ω
|
Collector resistance.
|
|
rbc=10.0 Ω
|
Constant part of base resistance.
|
|
rbv=10.0 Ω
|
Variable part of base resistance.
|
|
re=1.0 Ω
|
Emitter series resistance.
|
Junction capacitance parameters
|
taub=25.0e-9 s
|
Forward transit time related to neutral base.
|
|
taune=1.0e-9 s
|
Forward transit time related to neutral emitter in neutral e-b region.
|
|
mtau=1.0
|
Coefficient of current dependence of taune.
|
|
cje=100.0e-15 F
|
Zero bias emitter-base depletion capacitance.
|
|
vde=0.55 V
|
Emitter-base diffusion voltage.
|
|
pe=0.333
|
Emitter-base grading coefficient.
|
|
taur=100.0e-9 s
|
Ideal reverse transit time.
|
|
cjc=200.0e-15 F
|
Zero bias collector-base depletion capacitance.
|
|
vdc=0.55 V
|
Collector-base diffusion voltage.
|
|
pc=0.333
|
Collector-base grading coefficient.
|
|
cjs=1.0e-12 F
|
Zero bias substrate junction depletion capacitance.
|
|
vds=0.55 V
|
Substrate junction diffusion voltage.
|
|
ps=0.333
|
Substrate junction grading coefficient.
|
|
exphi=0.3
|
Excess phase shift.
|
|
fc=0.95
|
Coefficient for forward bias capacitance.
|
Temperature effects parameters
|
tref (C)
|
Reference temperature. Default set by option tnom.
|
|
tnom (C)
|
Alias of tref. Default set by option tnom.
|
|
dta=0.0 K
|
Difference between device temperature and ambient temperature.
|
|
trise=0.0 K
|
Alias of dta.
|
|
ptbf=0.0
|
Power for temperature dependence of bf.
|
|
ptbr=0.0
|
Power for temperature dependence of br.
|
|
ptrc=0.0
|
Power for temperature dependence of rc.
|
|
ptrb=0.0
|
Power for temperature dependence of rbc and rbv.
|
|
vg=1.2 V
|
Band-gap voltage.
|
|
pt=1.2
|
Power for temperature dependence of diffusion coefficient.
|
Noise model parameters
|
kf=0.0
|
Flickernoise coefficient.
|
|
af=1.0
|
Flickernoise exponent.
|
Operating-Point Parameters
|
ib (A)
|
Base current.
|
|
ic (A)
|
Collector current.
|
|
ie (A)
|
Emitter current.
|
|
isub (A)
|
Substrate current.
|
|
vbe (V)
|
Base-emitter voltage.
|
|
vbc (V)
|
Base-collector voltage.
|
|
vce (V)
|
Collector-emitter voltage.
|
|
vsubj (V)
|
Substrate voltage.
|
|
betadc (A/A)
|
Ratio of DC collector current to DC Base current.
|
|
rb (Ω)
|
Base resistance at operating point.
|
|
rc (Ω)
|
Collector resistance at operating point.
|
|
re (Ω)
|
Emitter resistance at operating point.
|
|
icb (A)
|
Collector-Base current.
|
|
ieb (A)
|
Emitter-Base current.
|
|
icsub (A)
|
Collector-Substrate current.
|
|
iesub (A)
|
Emitter-Substrate current.
|
|
pwr (W)
|
Power.
|
|
gpi (S)
|
Conductance emitter-base junction.
|
|
gmu (S)
|
Conductance collector-base junction.
|
|
gf (S)
|
Forward transconductance.
|
|
gr (S)
|
Reverse transconductance.
|
|
gs (S)
|
Conductance substrate-base junction.
|
|
g3 (S)
|
Transconductance (parasitic PNP) c-b-s transistor.
|
|
g4 (S)
|
Transconductance (parasitic PNP) e-b-s transistor.
|
|
ced (F)
|
Emitter diffusion capacitance.
|
|
ccd (F)
|
Collector diffusion capacitance.
|
|
cet (F)
|
Emitter junction depletion capacitance.
|
|
cct (F)
|
Collector junction depletion capacitance.
|
|
cst (F)
|
Substrate junction depletion capacitance.
|
|
betaac (A/A)
|
Small-signal common-emitter current gain.
|
|
ft (Hz)
|
Unity small-signal current-gain frequency.
|
Related Topics
Philips Models
Lateral PNP Transistor (bjt500)
Lateral PNP Transistor (bjt500t)
Return to top
