mult=1

Area factor.

printscaled=0

Print scaled parameter info if value not equal to zero.

trise=0 K

Difference between the local ambient and global ambient temperature.

region=fwd

Estimated DC operating region, used as a convergence aid. Possible values are off, sat, rev, and fwd.

m=1

Alias of mult.

area=1

Multiplication factor for bjt devices.

level=500

Bipolar Level.

paramchk=0

Level of clip warning info.

is=1.8e-16 A

Collector-emitter saturation current.

bf=131 A

Ideal forward common-emitter current gain.

ibf=2.6e-14 A

Saturation current of non-ideal forward base current.

vlf=0.54 V

Cross-over voltage of non-ideal forward base current.

ik=0.00011 A

High injection knee current.

xifv=0.43

Vertical fraction of forward current.

eafl=20.5 V

Early voltage of the lateral forward current component.

eafv=75 V

Early voltage of the vertical forward current component.

br=25 A

Ideal reverse common-emitter current gain.

ibr=1.2e-13 A

Saturation current of non-ideal reverse base current.

vlr=0.48 V

Cross-over voltage of non-ideal reverse base current.

xirv=0.43

Vertical fraction of reverse current.

earl=13.1 V

Early voltage of the lateral reverse current component.

earv=104 V

Early voltage of the vertical reverse current component.

xes=0.0027

Ratio between saturation current of e-b-s transistor and e-b-c transistor.

xhes=0.7

Fraction of substrate current of e-b-s transistor subject to high injection.

xcs=3

Ratio between saturation current of c-b-s transistor and c-b-e transistor.

xhcs=1

Fraction of substrate current of c-b-s transistor subject to high injection.

iss=4e-13 A

Saturation current of substrate-base diode.

rcex=5 Ω

External part of the collector resistance.

rcin=47 Ω

Internal part of the collector resistance.

rbcc=10 Ω

Constant part of the base resistance rbc.

rbcv=10 Ω

Variable part of the base resistance rbc.

rbec=10 Ω

Constant part of the base resistance rbe.

rbev=50 Ω

Variable part of the base resistance rbe.

reex=27 Ω

External part of the emitter resistance.

rein=66 Ω

Internal part of the emitter resistance.

rsb=1e+15 Ω

Substrate-base leakage resistance.

tlat=2.4e-09 s

Low injection (forward and reverse) transit time of charge stored in the epilayer between emitter and collector.

tfvr=3e-08 s

Low injection forward transit time due to charge stored in the epilayer under the emitter.

tfn=2e-10 s

Low injection forward transit time due to charge stored in the emitter and the buried layer under the emitter.

cje=6.1e-14 F

Zero-bias emitter-base depletion capacitance.

vde=0.52 V

Emitter-base diffusion voltage.

pe=0.3

Emitter-base grading coefficient.

trvr=1e-09 s

Low injection reverse transit time due to charge stored in the epilayer under the collector.

trn=3e-09 s

Low injection reverse transit time due to charge stored in the collector and the buried layer under the collector.

cjc=3.9e-13 F

Zero-bias collector-base depletion capacitance.

vdc=0.57 V

Collector-base diffusion voltage.

pc=0.36

Collector-base grading coefficient.

cjs=1.3e-12 F

Zero-bias substrate-base depletion capacitance.

vds=0.52 V

Substrate-base diffusion voltage.

ps=0.35

Substrate-base grading coefficient.

tref=25 C

Reference temperature. Default set by option tnom.

dta=0 K

Difference between the device temperature and the ambient analysis temperature.

vgeb=1.21 V

Bandgap voltage of the emitter-base depletion region.

vgcb=1.21 V

Bandgap voltage of the collector-base depletion region.

vgsb=1.21 V

Bandgap voltage of the substrate-base depletion region.

vgb=1.21 V

Bandgap voltage of the base between emitter and collector.

vge=1.21 V

Bandgap voltage of the emitter.

vgje=1.12 V

Bandgap voltage recombination emitter-base junction.

ae=4.48

Temperature coefficient of bf.

spb=2.85

SC.

snb=2.6

Temperature coefficient of the epitaxial base electron mobility.

snbn=0.3

Temperature coefficient of buried layer electron mobility.

spe=0.73

Temperature coefficient of emitter hole mobility.

spc=0.73

Temperature coefficient of collector hole mobility.

sx=1

Temperature coefficient of combined minority carrier mobility in emitter and buried layer.

kf=0

Flickernoise coefficient.

af=1

Flickernoise exponent.

exphi=0

Not used in model bjt500.

rth=300 K/W

Thermal resistance.

cth=3e-09 J/K

Thermal capacitance.

ath=0

Temperature coefficient of the thermal resistance.

type=npn

Transistor gender. Possible values are npn, pnp, npnv, pnpv, npnl, and pnpl.

imax=1000 A

Explosion current.

tnom (C)

alias of tnom.

tr (C)

alias of tnom.

compatible=spectre

Encourage device equations to be compatible with a foreign simulator. Possible values are spectre, spice2, spice3, cdsspice, spiceplus, eldo, sspice, mica, and pspice.

tempeff (C)

Effective temperature for a single device.

meff

Effective multiplicity factor (m-factor).

ic (A)

External DC collector current.

ib (A)

External DC base current.

ie (A)

Resistive emitter current.

isub (A)

Resistive substrate current.

iflat (A)

Lateral forward current.

irlat (A)

Lateral reverse current.

ifver (A)

Vertical forward current.

irver (A)

Vertical reverse current.

ire (A)

ideal forward base current.

ile (A)

Non-ideal forward base current.

ise (A)

Forward substrate current.

irc (A)

Ideal reverse base current.

ilc (A)

Non-ideal reverse base current.

isc (A)

Reverse substrate current.

isf (A)

Reverse leakage current of the substrate-base junction.

ip (A)

Main current.

betadc

External DC current gain Ic/Ib.

vbc (V)

Base-collector voltage.

vbe (V)

Base-emitter voltage.

vce (V)

Collector-emitter voltage.

vsb (V)

Substrate-base voltage.

rcex (Ω)

External part of the collector resistance.

rcin (Ω)

Internal part of the collector resistance.

reex (Ω)

External part of the emitter resistance.

rein (Ω)

Internal part of the emitter resistance.

rbc (Ω)

Base resistance under the collector.

rbe (Ω)

Base resistance under the emitter.

rsb (Ω)

Ohmic leakage across the substrate-base junction.

pwr (W)

Power.

gfl (S)

Forward conductance, lateral path.

grl (S)

Reverse conductance, lateral path.

g11 (S)

Forward conductance, vertical path.

g12 (S)

Collector Early-effect on Ifver.

g21 (S)

Emitter Early-effect on Irver.

g22 (S)

Reverse conductance, vertical path.

gpiv (S)

Conductance emitter-base junction.

gmuv (S)

Conductance collector-base junction.

gbe (S)

Emitter-side: base conductance B1-B.

gibe (S)

Emitter Early-effect on Ib1b.

gbc (S)

Collector-side: base conductance B2-B.

gibc (S)

Collector Early-effect on Ib2b.

gise (S)

Transconductance (parasitic PNP) e-b-s transistor.

gisc (S)

Transconductance (parasitic PNP) c-b-s transistor.

gsb (S)

Conductance substrate-base junction.

cpil (F)

Forward diffusion capacitance, lateral path.

cipil (F)

Collector Early-effect on Qflat.

cpiv (F)

Forward total capacitance, vertical path.

cmul (F)

Reverse diffusion capacitance, lateral path.

cimul (F)

Emitter Early-effect on Qrlat.

cmuv (F)

Reverse total capacitance, vertical path.

csb (F)

Total capacitance substrate-base junction.

irbe (A)

Ideal total forward base current.

irbc (A)

Ideal total reverse base current.

irsb (A)

Substrate base leakage resistance current.

Pdiss (W)

Dissipation.

TK (K)

Actual device temperature.

jtype

Type+1=npn and -1=pnp.